Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74219) > Seite 601 nach 1237

Wählen Sie Seite:   [  << Vorherige Seite ]  1 123 246 369 492 596 597 598 599 600 601 602 603 604 605 606 615 738 861 984 1107 1230 1237  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMT6010LFG-13 DMT6010LFG-13 Diodes Incorporated DMT6010LFG.pdf Description: MOSFET N-CH 60V 13A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.45 EUR
6000+0.42 EUR
9000+0.4 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMT6010LFG-13 DMT6010LFG-13 Diodes Incorporated DMT6010LFG.pdf Description: MOSFET N-CH 60V 13A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
auf Bestellung 13842 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.85 EUR
16+1.16 EUR
100+0.76 EUR
500+0.59 EUR
1000+0.54 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
DMT6006LSS-13 DMT6006LSS-13 Diodes Incorporated DMT6006LSS.pdf Description: MOSFET BVDSS: 41V~60V SO-8 T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2162 pF @ 30 V
auf Bestellung 7403 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.08 EUR
14+1.31 EUR
100+0.87 EUR
500+0.68 EUR
1000+0.62 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
DMTH61M8SPSQ-13 DMTH61M8SPSQ-13 Diodes Incorporated DMTH61M8SPSQ.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.54 EUR
10+2.94 EUR
100+2.34 EUR
500+1.98 EUR
1000+1.68 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DMTH61M8LPSQ-13 DMTH61M8LPSQ-13 Diodes Incorporated DMTH61M8LPSQ.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJD42C-13 MJD42C-13 Diodes Incorporated Description: TRANS PNP 100V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.28 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
AS7809ADTR-G1 AS7809ADTR-G1 Diodes Incorporated AS78XXA.pdf Description: IC REG LINEAR 9V 1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: TO-252-3
Voltage - Output (Min/Fixed): 9V
PSRR: 61dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C36Q-7-F BZX84C36Q-7-F Diodes Incorporated ds18001.pdf Description: ZENER DIODE SOT23 T&R 3K
Tolerance: ±5.56%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
80+0.22 EUR
148+0.12 EUR
500+0.094 EUR
1000+0.065 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C36S-7-F BZX84C36S-7-F Diodes Incorporated ds30108.pdf Description: DIODE ZENER ARRAY 36V SOT363
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 Independent
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-363
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C36S-7-F BZX84C36S-7-F Diodes Incorporated ds30108.pdf Description: DIODE ZENER ARRAY 36V SOT363
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 Independent
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-363
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
auf Bestellung 2998 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
40+0.44 EUR
100+0.22 EUR
500+0.18 EUR
1000+0.13 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C36TQ-7-F BZX84C36TQ-7-F Diodes Incorporated BZX84C5V6TQ-BZX84C36TQ.pdf Description: ZENER DIODE SOT523 T&R 3K
Tolerance: ±2.94%
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 34 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-523
Grade: Automotive
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Qualification: AEC-Q101
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.086 EUR
6000+0.078 EUR
9000+0.073 EUR
15000+0.069 EUR
21000+0.066 EUR
30000+0.063 EUR
75000+0.057 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AP5726WUG-7 AP5726WUG-7 Diodes Incorporated AP5726.pdf Description: IC LED DRVR RGLTR PWM TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: TSOT-23-6
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.36 EUR
6000+0.34 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AP5726WUG-7 AP5726WUG-7 Diodes Incorporated AP5726.pdf Description: IC LED DRVR RGLTR PWM TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: TSOT-23-6
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
auf Bestellung 11835 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.93 EUR
22+0.82 EUR
25+0.77 EUR
100+0.63 EUR
250+0.59 EUR
500+0.5 EUR
1000+0.4 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
HBDM60V600X-7 HBDM60V600X-7 Diodes Incorporated HBDM60V600X.pdf Description: TRANS NPN/PNP 60V/80V SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C
Power - Max: 200mW
Current - Collector (Ic) (Max): 600mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 60V, 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA, 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 1V / 100 @ 150mA, 10V
Supplier Device Package: SOT-363
auf Bestellung 33190 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.97 EUR
30+0.6 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
AP2301AS-13 AP2301AS-13 Diodes Incorporated AP23x1A.pdf Description: IC PWR SWITCH P-CHANNEL 1:1 8SO
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AP2301AS-13 AP2301AS-13 Diodes Incorporated AP23x1A.pdf Description: IC PWR SWITCH P-CHANNEL 1:1 8SO
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
auf Bestellung 2470 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.28 EUR
24+0.76 EUR
28+0.63 EUR
100+0.48 EUR
250+0.41 EUR
500+0.36 EUR
1000+0.32 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
AP2301AFGE-7 AP2301AFGE-7 Diodes Incorporated AP23x1A.pdf Description: IC PWR SWITCH P-CHAN 1:1 8UDFN
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-UDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: U-DFN3030-8 (Type E)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.33 EUR
6000+0.3 EUR
9000+0.29 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AP2301AFGE-7 AP2301AFGE-7 Diodes Incorporated AP23x1A.pdf Description: IC PWR SWITCH P-CHAN 1:1 8UDFN
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-UDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: U-DFN3030-8 (Type E)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.5 EUR
20+0.9 EUR
25+0.74 EUR
100+0.57 EUR
250+0.48 EUR
500+0.43 EUR
1000+0.39 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G10FW4-7 74LVC1G10FW4-7 Diodes Incorporated 74LVC1G10.pdf Description: IC GATE NAND 1CH 3-INP DFN1010-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: X2-DFN1010-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 40 µA
auf Bestellung 55000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.17 EUR
10000+0.15 EUR
25000+0.14 EUR
35000+0.13 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G10FW4-7 74LVC1G10FW4-7 Diodes Incorporated 74LVC1G10.pdf Description: IC GATE NAND 1CH 3-INP DFN1010-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: X2-DFN1010-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 40 µA
auf Bestellung 57950 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.9 EUR
33+0.54 EUR
41+0.44 EUR
100+0.33 EUR
250+0.28 EUR
500+0.24 EUR
1000+0.22 EUR
2500+0.19 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
SMF4L11A-7 SMF4L11A-7 Diodes Incorporated SMF4L5.0CA-SMF4L200CA.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 22A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.15 EUR
9000+0.13 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SMF4L51A-7 SMF4L51A-7 Diodes Incorporated SMF4L5.0CA-SMF4L200CA.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS21A Diodes Incorporated Description: SIGNAL SWITCHING DIODE SOT23
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PI3USB31532ZLE PI3USB31532ZLE Diodes Incorporated PI3USB31532.pdf Description: IC SWITCH USB 3.1 6:4 40TQFN
Packaging: Tray
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
-3db Bandwidth: 8GHz
Supplier Device Package: 40-TQFN (3x6)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 3:2
Number of Channels: 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PI3USB31532ZLEX PI3USB31532ZLEX Diodes Incorporated USB-Type-C-3.1-Gen2-DP-1.4-Crossbar-Switch-Diodes-PI3USB31532-NPA-032019.pdf Description: IC SWITCH USB 3.1 6:4 40TQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
-3db Bandwidth: 8GHz
Supplier Device Package: 40-TQFN (3x6)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 3:2
Number of Channels: 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN62D0UDW-13 DMN62D0UDW-13 Diodes Incorporated DMN62D0UDW.pdf Description: MOSFET 2N-CH 60V 0.35A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 350mA
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN62D0UDW-13 DMN62D0UDW-13 Diodes Incorporated DMN62D0UDW.pdf Description: MOSFET 2N-CH 60V 0.35A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 350mA
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 9405 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
34+0.52 EUR
100+0.26 EUR
500+0.21 EUR
1000+0.16 EUR
2000+0.13 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
DMN62D0UW-13 DMN62D0UW-13 Diodes Incorporated Description: MOSFET N-CH 60V 340MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
auf Bestellung 130000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.068 EUR
30000+0.066 EUR
50000+0.06 EUR
100000+0.053 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMN62D0UW-13 DMN62D0UW-13 Diodes Incorporated Description: MOSFET N-CH 60V 340MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
auf Bestellung 130000 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
50+0.36 EUR
101+0.17 EUR
500+0.15 EUR
1000+0.1 EUR
2000+0.088 EUR
5000+0.081 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
DMN62D0UDWQ-7 DMN62D0UDWQ-7 Diodes Incorporated DMN62D0UDWQ.pdf Description: MOSFET 2N-CH 60V 0.35A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
40+0.45 EUR
100+0.27 EUR
500+0.25 EUR
1000+0.17 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0LT-13 DMN52D0LT-13 Diodes Incorporated DMN52D0LT.pdf Description: MOSFET BVDSS: 41V~60V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.074 EUR
20000+0.068 EUR
30000+0.064 EUR
50000+0.06 EUR
70000+0.058 EUR
100000+0.056 EUR
250000+0.054 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0LT-13 DMN52D0LT-13 Diodes Incorporated DMN52D0LT.pdf Description: MOSFET BVDSS: 41V~60V SOT523 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
auf Bestellung 304012 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.44 EUR
66+0.27 EUR
105+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.098 EUR
5000+0.085 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UV-13 DMN52D0UV-13 Diodes Incorporated DMN52D0UV.pdf Description: MOSFET 2N-CH 50V 0.48A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 5mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.11 EUR
50000+0.093 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UV-13 DMN52D0UV-13 Diodes Incorporated DMN52D0UV.pdf Description: MOSFET 2N-CH 50V 0.48A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 5mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
33+0.54 EUR
100+0.27 EUR
500+0.22 EUR
1000+0.16 EUR
2000+0.14 EUR
5000+0.13 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UV-7 DMN52D0UV-7 Diodes Incorporated DMN52D0UV.pdf Description: MOSFET 2N-CH 50V 0.48A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 5mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.14 EUR
6000+0.13 EUR
9000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UV-7 DMN52D0UV-7 Diodes Incorporated DMN52D0UV.pdf Description: MOSFET 2N-CH 50V 0.48A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 5mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
33+0.54 EUR
100+0.27 EUR
500+0.22 EUR
1000+0.16 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UVA-7 DMN52D0UVA-7 Diodes Incorporated DMN52D0UVA.pdf Description: MOSFET 2N-CH 50V 0.48A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.14 EUR
6000+0.13 EUR
9000+0.11 EUR
75000+0.093 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UVA-7 DMN52D0UVA-7 Diodes Incorporated DMN52D0UVA.pdf Description: MOSFET 2N-CH 50V 0.48A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
33+0.54 EUR
100+0.27 EUR
500+0.22 EUR
1000+0.16 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
DMN53D0LQ-13 DMN53D0LQ-13 Diodes Incorporated DMN53D0LQ.pdf Description: MOSFET N-CH 50V 500MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1160000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.08 EUR
30000+0.078 EUR
50000+0.07 EUR
100000+0.062 EUR
250000+0.061 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMN53D0LQ-13 DMN53D0LQ-13 Diodes Incorporated DMN53D0LQ.pdf Description: MOSFET N-CH 50V 500MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1169900 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
42+0.42 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.12 EUR
2000+0.1 EUR
5000+0.096 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0LT-7 DMN52D0LT-7 Diodes Incorporated DMN52D0LT.pdf Description: MOSFET BVDSS: 41V~60V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
auf Bestellung 159000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.1 EUR
6000+0.095 EUR
9000+0.079 EUR
30000+0.078 EUR
75000+0.07 EUR
150000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0LT-7 DMN52D0LT-7 Diodes Incorporated DMN52D0LT.pdf Description: MOSFET BVDSS: 41V~60V SOT523 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
auf Bestellung 161965 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
43+0.42 EUR
100+0.2 EUR
500+0.17 EUR
1000+0.12 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
DMN53D0L-13 DMN53D0L-13 Diodes Incorporated DMN53D0L.pdf Description: MOSFET N-CH 50V 500MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 25 V
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.077 EUR
30000+0.076 EUR
50000+0.068 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMN53D0L-13 DMN53D0L-13 Diodes Incorporated DMN53D0L.pdf Description: MOSFET N-CH 50V 500MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 25 V
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
44+0.41 EUR
100+0.2 EUR
500+0.17 EUR
1000+0.12 EUR
2000+0.1 EUR
5000+0.093 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
DMN53D0LDWQ-7 DMN53D0LDWQ-7 Diodes Incorporated DMN53D0LDWQ.pdf Description: MOSFET 2N-CH 50V 0.46A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 49.5pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 267000 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.79 EUR
32+0.56 EUR
100+0.28 EUR
500+0.25 EUR
1000+0.19 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
DMN53D0LTQ-13 DMN53D0LTQ-13 Diodes Incorporated DMN53D0LTQ.pdf Description: MOSFET BVDSS: 41V~60V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-523
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 170000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.065 EUR
30000+0.061 EUR
50000+0.057 EUR
100000+0.051 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UW-13 DMN52D0UW-13 Diodes Incorporated DMN52D0UW.pdf Description: MOSFET BVDSS: 41V~60V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 400µW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UQ-13 DMN52D0UQ-13 Diodes Incorporated DMN52D0UQ.pdf Description: MOSFET BVDSS: 41V~60V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UWQ-13 DMN52D0UWQ-13 Diodes Incorporated DMN52D0UWQ.pdf Description: MOSFET BVDSS: 41V~60V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0U-13 DMN52D0U-13 Diodes Incorporated DMN52D0U.pdf Description: MOSFET BVDSS: 41V~60V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN53D0LTQ-7 DMN53D0LTQ-7 Diodes Incorporated DMN53D0LTQ.pdf Description: MOSFET BVDSS: 41V~60V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-523
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 486000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.088 EUR
6000+0.076 EUR
15000+0.065 EUR
30000+0.061 EUR
75000+0.057 EUR
150000+0.049 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UW-7 DMN52D0UW-7 Diodes Incorporated DMN52D0UW.pdf Description: MOSFET BVDSS: 41V~60V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 400µW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
auf Bestellung 174000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.093 EUR
6000+0.081 EUR
15000+0.069 EUR
30000+0.065 EUR
75000+0.06 EUR
150000+0.052 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UQ-7 DMN52D0UQ-7 Diodes Incorporated DMN52D0UQ.pdf Description: MOSFET BVDSS: 41V~60V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UWQ-7 DMN52D0UWQ-7 Diodes Incorporated DMN52D0UWQ.pdf Description: MOSFET BVDSS: 41V~60V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0U-7 DMN52D0U-7 Diodes Incorporated DMN52D0U.pdf Description: MOSFET BVDSS: 41V~60V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
auf Bestellung 171000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+0.098 EUR
9000+0.081 EUR
30000+0.08 EUR
75000+0.072 EUR
150000+0.062 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UVQ-13 DMN52D0UVQ-13 Diodes Incorporated DMN52D0UVQ.pdf Description: MOSFET BVDSS: 41V~60V SOT563 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UVT-13 DMN52D0UVT-13 Diodes Incorporated DMN52D0UVT.pdf Description: MOSFET 2N-CH 50V 0.43A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500µW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UDM-7 DMN52D0UDM-7 Diodes Incorporated DMN52D0UDM.pdf Description: MOSFET BVDSS: 41V~60V SOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42.4pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UVQ-7 DMN52D0UVQ-7 Diodes Incorporated DMN52D0UVQ.pdf Description: MOSFET BVDSS: 41V~60V SOT563 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UVTQ-13 DMN52D0UVTQ-13 Diodes Incorporated DMN52D0UVTQ.pdf Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6010LFG-13 DMT6010LFG.pdf
DMT6010LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.45 EUR
6000+0.42 EUR
9000+0.4 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMT6010LFG-13 DMT6010LFG.pdf
DMT6010LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
auf Bestellung 13842 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.85 EUR
16+1.16 EUR
100+0.76 EUR
500+0.59 EUR
1000+0.54 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
DMT6006LSS-13 DMT6006LSS.pdf
DMT6006LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SO-8 T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2162 pF @ 30 V
auf Bestellung 7403 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.08 EUR
14+1.31 EUR
100+0.87 EUR
500+0.68 EUR
1000+0.62 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
DMTH61M8SPSQ-13 DMTH61M8SPSQ.pdf
DMTH61M8SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.54 EUR
10+2.94 EUR
100+2.34 EUR
500+1.98 EUR
1000+1.68 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DMTH61M8LPSQ-13 DMTH61M8LPSQ.pdf
DMTH61M8LPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJD42C-13
MJD42C-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 100V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.28 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
AS7809ADTR-G1 AS78XXA.pdf
AS7809ADTR-G1
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 9V 1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: TO-252-3
Voltage - Output (Min/Fixed): 9V
PSRR: 61dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C36Q-7-F ds18001.pdf
BZX84C36Q-7-F
Hersteller: Diodes Incorporated
Description: ZENER DIODE SOT23 T&R 3K
Tolerance: ±5.56%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
80+0.22 EUR
148+0.12 EUR
500+0.094 EUR
1000+0.065 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C36S-7-F ds30108.pdf
BZX84C36S-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER ARRAY 36V SOT363
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 Independent
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-363
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C36S-7-F ds30108.pdf
BZX84C36S-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER ARRAY 36V SOT363
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 Independent
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-363
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
auf Bestellung 2998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
40+0.44 EUR
100+0.22 EUR
500+0.18 EUR
1000+0.13 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C36TQ-7-F BZX84C5V6TQ-BZX84C36TQ.pdf
BZX84C36TQ-7-F
Hersteller: Diodes Incorporated
Description: ZENER DIODE SOT523 T&R 3K
Tolerance: ±2.94%
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 34 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-523
Grade: Automotive
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Qualification: AEC-Q101
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.086 EUR
6000+0.078 EUR
9000+0.073 EUR
15000+0.069 EUR
21000+0.066 EUR
30000+0.063 EUR
75000+0.057 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AP5726WUG-7 AP5726.pdf
AP5726WUG-7
Hersteller: Diodes Incorporated
Description: IC LED DRVR RGLTR PWM TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: TSOT-23-6
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.36 EUR
6000+0.34 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AP5726WUG-7 AP5726.pdf
AP5726WUG-7
Hersteller: Diodes Incorporated
Description: IC LED DRVR RGLTR PWM TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: TSOT-23-6
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
auf Bestellung 11835 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
22+0.82 EUR
25+0.77 EUR
100+0.63 EUR
250+0.59 EUR
500+0.5 EUR
1000+0.4 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
HBDM60V600X-7 HBDM60V600X.pdf
HBDM60V600X-7
Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 60V/80V SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C
Power - Max: 200mW
Current - Collector (Ic) (Max): 600mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 60V, 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA, 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 1V / 100 @ 150mA, 10V
Supplier Device Package: SOT-363
auf Bestellung 33190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
30+0.6 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
AP2301AS-13 AP23x1A.pdf
AP2301AS-13
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH P-CHANNEL 1:1 8SO
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AP2301AS-13 AP23x1A.pdf
AP2301AS-13
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH P-CHANNEL 1:1 8SO
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
auf Bestellung 2470 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.28 EUR
24+0.76 EUR
28+0.63 EUR
100+0.48 EUR
250+0.41 EUR
500+0.36 EUR
1000+0.32 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
AP2301AFGE-7 AP23x1A.pdf
AP2301AFGE-7
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH P-CHAN 1:1 8UDFN
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-UDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: U-DFN3030-8 (Type E)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.33 EUR
6000+0.3 EUR
9000+0.29 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AP2301AFGE-7 AP23x1A.pdf
AP2301AFGE-7
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH P-CHAN 1:1 8UDFN
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-UDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: U-DFN3030-8 (Type E)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.5 EUR
20+0.9 EUR
25+0.74 EUR
100+0.57 EUR
250+0.48 EUR
500+0.43 EUR
1000+0.39 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G10FW4-7 74LVC1G10.pdf
74LVC1G10FW4-7
Hersteller: Diodes Incorporated
Description: IC GATE NAND 1CH 3-INP DFN1010-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: X2-DFN1010-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 40 µA
auf Bestellung 55000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.17 EUR
10000+0.15 EUR
25000+0.14 EUR
35000+0.13 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G10FW4-7 74LVC1G10.pdf
74LVC1G10FW4-7
Hersteller: Diodes Incorporated
Description: IC GATE NAND 1CH 3-INP DFN1010-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: X2-DFN1010-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 40 µA
auf Bestellung 57950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
33+0.54 EUR
41+0.44 EUR
100+0.33 EUR
250+0.28 EUR
500+0.24 EUR
1000+0.22 EUR
2500+0.19 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
SMF4L11A-7 SMF4L5.0CA-SMF4L200CA.pdf
SMF4L11A-7
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 22A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
9000+0.13 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SMF4L51A-7 SMF4L5.0CA-SMF4L200CA.pdf
SMF4L51A-7
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS21A
Hersteller: Diodes Incorporated
Description: SIGNAL SWITCHING DIODE SOT23
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PI3USB31532ZLE PI3USB31532.pdf
PI3USB31532ZLE
Hersteller: Diodes Incorporated
Description: IC SWITCH USB 3.1 6:4 40TQFN
Packaging: Tray
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
-3db Bandwidth: 8GHz
Supplier Device Package: 40-TQFN (3x6)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 3:2
Number of Channels: 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PI3USB31532ZLEX USB-Type-C-3.1-Gen2-DP-1.4-Crossbar-Switch-Diodes-PI3USB31532-NPA-032019.pdf
PI3USB31532ZLEX
Hersteller: Diodes Incorporated
Description: IC SWITCH USB 3.1 6:4 40TQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
-3db Bandwidth: 8GHz
Supplier Device Package: 40-TQFN (3x6)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 3:2
Number of Channels: 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN62D0UDW-13 DMN62D0UDW.pdf
DMN62D0UDW-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.35A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 350mA
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN62D0UDW-13 DMN62D0UDW.pdf
DMN62D0UDW-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.35A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 350mA
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 9405 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
34+0.52 EUR
100+0.26 EUR
500+0.21 EUR
1000+0.16 EUR
2000+0.13 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
DMN62D0UW-13
DMN62D0UW-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 340MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
auf Bestellung 130000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.068 EUR
30000+0.066 EUR
50000+0.06 EUR
100000+0.053 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMN62D0UW-13
DMN62D0UW-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 340MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
auf Bestellung 130000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
50+0.36 EUR
101+0.17 EUR
500+0.15 EUR
1000+0.1 EUR
2000+0.088 EUR
5000+0.081 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
DMN62D0UDWQ-7 DMN62D0UDWQ.pdf
DMN62D0UDWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.35A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
40+0.45 EUR
100+0.27 EUR
500+0.25 EUR
1000+0.17 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0LT-13 DMN52D0LT.pdf
DMN52D0LT-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.074 EUR
20000+0.068 EUR
30000+0.064 EUR
50000+0.06 EUR
70000+0.058 EUR
100000+0.056 EUR
250000+0.054 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0LT-13 DMN52D0LT.pdf
DMN52D0LT-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT523 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
auf Bestellung 304012 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
66+0.27 EUR
105+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.098 EUR
5000+0.085 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UV-13 DMN52D0UV.pdf
DMN52D0UV-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.48A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 5mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.11 EUR
50000+0.093 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UV-13 DMN52D0UV.pdf
DMN52D0UV-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.48A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 5mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
33+0.54 EUR
100+0.27 EUR
500+0.22 EUR
1000+0.16 EUR
2000+0.14 EUR
5000+0.13 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UV-7 DMN52D0UV.pdf
DMN52D0UV-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.48A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 5mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.13 EUR
9000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UV-7 DMN52D0UV.pdf
DMN52D0UV-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.48A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 5mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
33+0.54 EUR
100+0.27 EUR
500+0.22 EUR
1000+0.16 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UVA-7 DMN52D0UVA.pdf
DMN52D0UVA-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.48A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.13 EUR
9000+0.11 EUR
75000+0.093 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UVA-7 DMN52D0UVA.pdf
DMN52D0UVA-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.48A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
33+0.54 EUR
100+0.27 EUR
500+0.22 EUR
1000+0.16 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
DMN53D0LQ-13 DMN53D0LQ.pdf
DMN53D0LQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 500MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1160000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.08 EUR
30000+0.078 EUR
50000+0.07 EUR
100000+0.062 EUR
250000+0.061 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMN53D0LQ-13 DMN53D0LQ.pdf
DMN53D0LQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 500MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1169900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
42+0.42 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.12 EUR
2000+0.1 EUR
5000+0.096 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0LT-7 DMN52D0LT.pdf
DMN52D0LT-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
auf Bestellung 159000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.1 EUR
6000+0.095 EUR
9000+0.079 EUR
30000+0.078 EUR
75000+0.07 EUR
150000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0LT-7 DMN52D0LT.pdf
DMN52D0LT-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT523 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
auf Bestellung 161965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
43+0.42 EUR
100+0.2 EUR
500+0.17 EUR
1000+0.12 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
DMN53D0L-13 DMN53D0L.pdf
DMN53D0L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 500MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 25 V
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.077 EUR
30000+0.076 EUR
50000+0.068 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMN53D0L-13 DMN53D0L.pdf
DMN53D0L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 500MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 25 V
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
44+0.41 EUR
100+0.2 EUR
500+0.17 EUR
1000+0.12 EUR
2000+0.1 EUR
5000+0.093 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
DMN53D0LDWQ-7 DMN53D0LDWQ.pdf
DMN53D0LDWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.46A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 49.5pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 267000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
32+0.56 EUR
100+0.28 EUR
500+0.25 EUR
1000+0.19 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
DMN53D0LTQ-13 DMN53D0LTQ.pdf
DMN53D0LTQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-523
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 170000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.065 EUR
30000+0.061 EUR
50000+0.057 EUR
100000+0.051 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UW-13 DMN52D0UW.pdf
DMN52D0UW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 400µW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UQ-13 DMN52D0UQ.pdf
DMN52D0UQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UWQ-13 DMN52D0UWQ.pdf
DMN52D0UWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0U-13 DMN52D0U.pdf
DMN52D0U-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN53D0LTQ-7 DMN53D0LTQ.pdf
DMN53D0LTQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-523
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 486000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.088 EUR
6000+0.076 EUR
15000+0.065 EUR
30000+0.061 EUR
75000+0.057 EUR
150000+0.049 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UW-7 DMN52D0UW.pdf
DMN52D0UW-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 400µW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
auf Bestellung 174000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.093 EUR
6000+0.081 EUR
15000+0.069 EUR
30000+0.065 EUR
75000+0.06 EUR
150000+0.052 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UQ-7 DMN52D0UQ.pdf
DMN52D0UQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UWQ-7 DMN52D0UWQ.pdf
DMN52D0UWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0U-7 DMN52D0U.pdf
DMN52D0U-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
auf Bestellung 171000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.098 EUR
9000+0.081 EUR
30000+0.08 EUR
75000+0.072 EUR
150000+0.062 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UVQ-13 DMN52D0UVQ.pdf
DMN52D0UVQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT563 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UVT-13 DMN52D0UVT.pdf
DMN52D0UVT-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.43A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500µW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UDM-7 DMN52D0UDM.pdf
DMN52D0UDM-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42.4pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UVQ-7 DMN52D0UVQ.pdf
DMN52D0UVQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT563 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN52D0UVTQ-13 DMN52D0UVTQ.pdf
DMN52D0UVTQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 123 246 369 492 596 597 598 599 600 601 602 603 604 605 606 615 738 861 984 1107 1230 1237  [ Nächste Seite >> ]