
DMNH6035SPDWQ-13 Diodes Zetex
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Technische Details DMNH6035SPDWQ-13 Diodes Zetex
Description: MOSFET 2N-CH 60V 33A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.4W (Ta), 68W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V, Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type R), Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMNH6035SPDWQ-13
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMNH6035SPDWQ-13 | Hersteller : Diodes Inc |
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Produkt ist nicht verfügbar |
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DMNH6035SPDWQ-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W (Ta), 68W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type R) Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DMNH6035SPDWQ-13 | Hersteller : Diodes Incorporated |
![]() |
Produkt ist nicht verfügbar |