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GC0400026 GC0400026 Diodes Incorporated GC,GF_Series.pdf Description: CRYSTAL METAL CAN 49S/SMD T&R 1K
Packaging: Tape & Reel (TR)
Type: MHz Crystal
Operating Mode: Fundamental
Produkt ist nicht verfügbar
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GC2400026 GC2400026 Diodes Incorporated GC2400026.pdf Description: CRYSTAL 24.0000MHZ 20PF
Packaging: Tape & Reel (TR)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 30 Ohms
Frequency: 24 MHz
Produkt ist nicht verfügbar
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FL4000269Q FL4000269Q Diodes Incorporated FL.pdf Description: CRYSTAL 40.0000MHZ 10PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 40 MHz
Produkt ist nicht verfügbar
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FX2400026 FX2400026 Diodes Incorporated F6_FX.pdf Description: CRYSTAL SURFACE MOUNT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.236" L x 0.138" W (6.00mm x 3.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Mode: Fundamental
Height - Seated (Max): 0.053" (1.35mm)
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GBL410 Diodes Incorporated GBL410.pdf Description: BRIDGE RECT 1PHASE 1KV 4A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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DMN61D9UDWQ-7 DMN61D9UDWQ-7 Diodes Incorporated DMN61D9UDWQ.pdf Description: MOSFET 2N-CH 60V 0.318A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 318mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 30V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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DMN61D9UDWQ-7 DMN61D9UDWQ-7 Diodes Incorporated DMN61D9UDWQ.pdf Description: MOSFET 2N-CH 60V 0.318A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 318mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 30V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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AP2192MPG-13 AP2192MPG-13 Diodes Incorporated AP2182_92.pdf Description: IC PWR SWITCH 2CH USB 1.5A 8MSOP
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 85mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:2
Supplier Device Package: 8-MSOP-EP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
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AP2192MPG-13 AP2192MPG-13 Diodes Incorporated AP2182_92.pdf Description: IC PWR SWITCH 2CH USB 1.5A 8MSOP
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 85mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:2
Supplier Device Package: 8-MSOP-EP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
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AP2805AMM-G1 AP2805AMM-G1 Diodes Incorporated AP2805.pdf Description: IC PWR SWITCH N-CHAN 1:1 8MSOP
Packaging: Tube
Features: Load Discharge, Status Flag
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 60mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 8-MSOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
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AP2810AMM-G1 AP2810AMM-G1 Diodes Incorporated AP2810.pdf Description: IC PWR SWITCH N-CHAN 1:1 8MSOP
Packaging: Tube
Features: Load Discharge, Status Flag
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 60mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-MSOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
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AP2815AMM-G1 AP2815AMM-G1 Diodes Incorporated AP2815.pdf Description: IC PWR SWITCH N-CHAN 1:1 8MSOP
Packaging: Tube
Features: Load Discharge, Status Flag
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 60mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-MSOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Produkt ist nicht verfügbar
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DMP510DLW-13 DMP510DLW-13 Diodes Incorporated DMP510DLW.pdf Description: MOSFET BVDSS: 41V-60V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 174mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): ±20V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
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DMP510DLW-7 DMP510DLW-7 Diodes Incorporated DMP510DLW.pdf Description: MOSFET BVDSS: 41V-60V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 174mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): ±20V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
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DMTH4014LPDQ-13 DMTH4014LPDQ-13 Diodes Incorporated DMTH4014LPDQ.pdf Description: MOSFET 2N-CH 40V 10.6A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.41W (Ta), 42.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
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DMTH4014LPDQ-13 DMTH4014LPDQ-13 Diodes Incorporated DMTH4014LPDQ.pdf Description: MOSFET 2N-CH 40V 10.6A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.41W (Ta), 42.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
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74AUP2G3404FW4-7 74AUP2G3404FW4-7 Diodes Incorporated 74AUP2G3404.pdf Description: IC BUF/INV 2-CIR 2-IN 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Buffer/Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2 Input (1, 1)
Schmitt Trigger Input: No
Supplier Device Package: X2-DFN1010-6
Number of Circuits: 2
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74AUP2G3404FW4-7 74AUP2G3404FW4-7 Diodes Incorporated 74AUP2G3404.pdf Description: IC BUF/INV 2-CIR 2-IN 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Buffer/Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2 Input (1, 1)
Schmitt Trigger Input: No
Supplier Device Package: X2-DFN1010-6
Number of Circuits: 2
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1000+0.18 EUR
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74LVC06AT14-13 74LVC06AT14-13 Diodes Incorporated 74LVC06A.pdf Description: IC HEX INVERTER O-D 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 14-TSSOP
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GBU15L06-TU GBU15L06-TU Diodes Incorporated GBU15L06.pdf Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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FZT591ATA FZT591ATA Diodes Incorporated FZT591A.pdf Description: TRANS PNP 40V 1A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 2 W
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FZT591ATA FZT591ATA Diodes Incorporated FZT591A.pdf Description: TRANS PNP 40V 1A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 2 W
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MBRB10150CT MBRB10150CT Diodes Incorporated MBRB10150CT.pdf Description: DIODE ARR SCHOTT 150V 5A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
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MBRB10150CT MBRB10150CT Diodes Incorporated MBRB10150CT.pdf Description: DIODE ARR SCHOTT 150V 5A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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D10V0H1U2LP-7B D10V0H1U2LP-7B Diodes Incorporated D10V0H1U2LP.pdf Description: TVS DIODE 10VWM 20VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.5V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 300W
Power Line Protection: No
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D10V0H1U2LP-7B D10V0H1U2LP-7B Diodes Incorporated D10V0H1U2LP.pdf Description: TVS DIODE 10VWM 20VC DFN1006-2
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.5V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 300W
Power Line Protection: No
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BZT52C27Q-7-F BZT52C27Q-7-F Diodes Incorporated ds18004.pdf Description: ZENER DIODE SOD123 T&R 3K
Packaging: Tape & Reel (TR)
Tolerance: ±7.04%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Qualification: AEC-Q101
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BZT52C27Q-7-F BZT52C27Q-7-F Diodes Incorporated ds18004.pdf Description: ZENER DIODE SOD123 T&R 3K
Packaging: Cut Tape (CT)
Tolerance: ±7.04%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Qualification: AEC-Q101
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BZT52C27SQ-7-F BZT52C27SQ-7-F Diodes Incorporated Description: DIODE ZENER 27V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±7.04%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Qualification: AEC-Q101
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FES2JD_HF FES2JD_HF Diodes Incorporated Description: DIODE STANDARD 600V 2A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Supplier Device Package: DO-221AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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ES2JA_HF ES2JA_HF Diodes Incorporated ES2DA-ES2JA_LS.pdf Description: DIODE STANDARD 600V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Supplier Device Package: SMA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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LL4151-7 LL4151-7 Diodes Incorporated LL4151.pdf Description: DIODE SWITCH 50V 500MW MINIMELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: Mini MELF
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Produkt ist nicht verfügbar
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AN431AN-ATRE1 AN431AN-ATRE1 Diodes Incorporated AN431.pdf Description: IC VREF SHUNT ADJ 0.5% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 20ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Produkt ist nicht verfügbar
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AN431AN-ATRE1 AN431AN-ATRE1 Diodes Incorporated AN431.pdf Description: IC VREF SHUNT ADJ 0.5% SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±0.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 20ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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BABS140 BABS140 Diodes Incorporated Description: PLANAR SCHOTTKY RECTIFIER ABS/SO
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: Schottky
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 40 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
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DMN2450UFB4-7B DMN2450UFB4-7B Diodes Incorporated DMN2450UFB4.pdf Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
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DMN2450UFB4-7B DMN2450UFB4-7B Diodes Incorporated DMN2450UFB4.pdf Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
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DMN2450UFB4-7R DMN2450UFB4-7R Diodes Incorporated DMN2450UFB4.pdf Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
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DMN2450UFB4-7R DMN2450UFB4-7R Diodes Incorporated DMN2450UFB4.pdf Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
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DMN2451UFDQ-13 DMN2451UFDQ-13 Diodes Incorporated DMN2451UFDQ.pdf Description: MOSFET N-CH 20V 900MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 200mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN1212-3 (Type C)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN2451UFDQ-7 DMN2451UFDQ-7 Diodes Incorporated DMN2451UFDQ.pdf Description: MOSFET N-CH 20V 900MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 200mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN1212-3 (Type C)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V
Qualification: AEC-Q101
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FN2450038 FN2450038 Diodes Incorporated FN2450038.pdf Description: XTAL OSC XO 24.5760MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.3V
Frequency: 24.576 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FN2450045 FN2450045 Diodes Incorporated FN2450045.pdf Description: XTAL OSC XO 24.5760MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 24.576 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FN2450055Z FN2450055Z Diodes Incorporated FN2450055Z.pdf Description: XTAL OSC XO 24.5760MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 1.8V
Current - Supply (Max): 7mA
Height - Seated (Max): 0.061" (1.55mm)
Frequency: 24.576 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FD5000067 FD5000067 Diodes Incorporated FD5000067.pdf Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.8V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FD5000051 FD5000051 Diodes Incorporated FD_3-3V.pdf Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 50 MHz
Base Resonator: Crystal
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GB2400030 GB2400030 Diodes Incorporated GB_GG.pdf Description: CRYSTAL 24.0000MHZ 18PF
Packaging: Tape & Reel (TR)
Load Capacitance: 18pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 24 MHz
Produkt ist nicht verfügbar
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GB2400038 GB2400038 Diodes Incorporated GB_GG.pdf Description: CRYSTAL 24.0000MHZ 20PF
Packaging: Tape & Reel (TR)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 30 Ohms
Frequency: 24 MHz
Produkt ist nicht verfügbar
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1N5406G_HF 1N5406G_HF Diodes Incorporated Description: DIODE STANDARD 600V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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FD5000060 FD5000060 Diodes Incorporated FD_3-3V.pdf Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 90°C
Voltage - Supply: 3.3V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FR1120004 Diodes Incorporated FR_3-3V.pdf Description: XTAL OSC XO 11.2896MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 11.2896 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FK2450013Q FK2450013Q Diodes Incorporated FK2450013Q.pdf Description: XTAL OSC XO 24.5760MHZ CMOS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.9V
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 24.576 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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1N5399S_HF 1N5399S_HF Diodes Incorporated Description: DIODE STANDARD 1000V 1.5A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Supplier Device Package: DO-41
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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SBR60A200CT SBR60A200CT Diodes Incorporated SBR60A200CT.pdf Description: DIODE ARR SBR 200V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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SBR60A150CT-G SBR60A150CT-G Diodes Incorporated SBR60A150CT.pdf Description: DIODE ARR SBR 150V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
Produkt ist nicht verfügbar
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SBR60A60CT-G SBR60A60CT-G Diodes Incorporated SBR60A60CT.pdf Description: DIODE ARR SBR 60V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar
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SBR60A300CT-2223 SBR60A300CT-2223 Diodes Incorporated Description: DIODE ARR SBR 300V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Produkt ist nicht verfügbar
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SBR60A60CT-G-2223 SBR60A60CT-G-2223 Diodes Incorporated Description: DIODE ARR SBR 60V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar
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SBR60A150CT-2223 SBR60A150CT-2223 Diodes Incorporated Description: DIODE ARR SBR 150V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
Produkt ist nicht verfügbar
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SBR60A60CT-2223 SBR60A60CT-2223 Diodes Incorporated Description: DIODE ARR SBR 60V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar
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GC0400026 GC,GF_Series.pdf
GC0400026
Hersteller: Diodes Incorporated
Description: CRYSTAL METAL CAN 49S/SMD T&R 1K
Packaging: Tape & Reel (TR)
Type: MHz Crystal
Operating Mode: Fundamental
Produkt ist nicht verfügbar
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GC2400026 GC2400026.pdf
GC2400026
Hersteller: Diodes Incorporated
Description: CRYSTAL 24.0000MHZ 20PF
Packaging: Tape & Reel (TR)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 30 Ohms
Frequency: 24 MHz
Produkt ist nicht verfügbar
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FL4000269Q FL.pdf
FL4000269Q
Hersteller: Diodes Incorporated
Description: CRYSTAL 40.0000MHZ 10PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 40 MHz
Produkt ist nicht verfügbar
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FX2400026 F6_FX.pdf
FX2400026
Hersteller: Diodes Incorporated
Description: CRYSTAL SURFACE MOUNT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.236" L x 0.138" W (6.00mm x 3.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Mode: Fundamental
Height - Seated (Max): 0.053" (1.35mm)
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1000+0.85 EUR
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GBL410 GBL410.pdf
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 4A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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10+1.83 EUR
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DMN61D9UDWQ-7 DMN61D9UDWQ.pdf
DMN61D9UDWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.318A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 318mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 30V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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DMN61D9UDWQ-7 DMN61D9UDWQ.pdf
DMN61D9UDWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.318A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 318mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 30V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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Anzahl Preis
36+0.49 EUR
52+0.34 EUR
107+0.17 EUR
500+0.14 EUR
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AP2192MPG-13 AP2182_92.pdf
AP2192MPG-13
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH 2CH USB 1.5A 8MSOP
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 85mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:2
Supplier Device Package: 8-MSOP-EP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
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2500+1.05 EUR
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AP2192MPG-13 AP2182_92.pdf
AP2192MPG-13
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH 2CH USB 1.5A 8MSOP
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 85mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:2
Supplier Device Package: 8-MSOP-EP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
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8+2.48 EUR
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AP2805AMM-G1 AP2805.pdf
AP2805AMM-G1
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8MSOP
Packaging: Tube
Features: Load Discharge, Status Flag
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 60mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 8-MSOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Produkt ist nicht verfügbar
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AP2810AMM-G1 AP2810.pdf
AP2810AMM-G1
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8MSOP
Packaging: Tube
Features: Load Discharge, Status Flag
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 60mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-MSOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Produkt ist nicht verfügbar
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AP2815AMM-G1 AP2815.pdf
AP2815AMM-G1
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8MSOP
Packaging: Tube
Features: Load Discharge, Status Flag
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 60mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-MSOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Produkt ist nicht verfügbar
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DMP510DLW-13 DMP510DLW.pdf
DMP510DLW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V-60V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 174mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): ±20V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
auf Bestellung 140000 Stücke:
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10000+0.053 EUR
30000+0.052 EUR
50000+0.046 EUR
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DMP510DLW-7 DMP510DLW.pdf
DMP510DLW-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V-60V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 174mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): ±20V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
auf Bestellung 162000 Stücke:
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Anzahl Preis
3000+0.068 EUR
6000+0.063 EUR
9000+0.053 EUR
30000+0.052 EUR
75000+0.046 EUR
150000+0.04 EUR
Mindestbestellmenge: 3000
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DMTH4014LPDQ-13 DMTH4014LPDQ.pdf
DMTH4014LPDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 10.6A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.41W (Ta), 42.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
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2500+0.57 EUR
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DMTH4014LPDQ-13 DMTH4014LPDQ.pdf
DMTH4014LPDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 10.6A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.41W (Ta), 42.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 422500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
15+1.23 EUR
100+0.88 EUR
500+0.71 EUR
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74AUP2G3404FW4-7 74AUP2G3404.pdf
74AUP2G3404FW4-7
Hersteller: Diodes Incorporated
Description: IC BUF/INV 2-CIR 2-IN 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Buffer/Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2 Input (1, 1)
Schmitt Trigger Input: No
Supplier Device Package: X2-DFN1010-6
Number of Circuits: 2
auf Bestellung 120000 Stücke:
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5000+0.14 EUR
10000+0.13 EUR
15000+0.12 EUR
25000+0.11 EUR
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74AUP2G3404FW4-7 74AUP2G3404.pdf
74AUP2G3404FW4-7
Hersteller: Diodes Incorporated
Description: IC BUF/INV 2-CIR 2-IN 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Buffer/Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2 Input (1, 1)
Schmitt Trigger Input: No
Supplier Device Package: X2-DFN1010-6
Number of Circuits: 2
auf Bestellung 124186 Stücke:
Lieferzeit 10-14 Tag (e)
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24+0.76 EUR
40+0.45 EUR
48+0.37 EUR
100+0.28 EUR
250+0.23 EUR
500+0.2 EUR
1000+0.18 EUR
2500+0.15 EUR
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74LVC06AT14-13 74LVC06A.pdf
74LVC06AT14-13
Hersteller: Diodes Incorporated
Description: IC HEX INVERTER O-D 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 14-TSSOP
auf Bestellung 6057 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
70+0.25 EUR
79+0.22 EUR
100+0.19 EUR
250+0.18 EUR
500+0.17 EUR
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GBU15L06-TU GBU15L06.pdf
GBU15L06-TU
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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FZT591ATA FZT591A.pdf
FZT591ATA
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 1A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 2 W
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.43 EUR
2000+0.4 EUR
3000+0.38 EUR
5000+0.36 EUR
7000+0.35 EUR
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FZT591ATA FZT591A.pdf
FZT591ATA
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 1A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 2 W
auf Bestellung 7424 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.3 EUR
21+0.87 EUR
100+0.6 EUR
500+0.47 EUR
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MBRB10150CT MBRB10150CT.pdf
MBRB10150CT
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 150V 5A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 50 Stücke:
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Anzahl Preis
16+1.11 EUR
19+0.96 EUR
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MBRB10150CT MBRB10150CT.pdf
MBRB10150CT
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 150V 5A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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D10V0H1U2LP-7B D10V0H1U2LP.pdf
D10V0H1U2LP-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 10VWM 20VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.5V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 300W
Power Line Protection: No
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.084 EUR
30000+0.083 EUR
50000+0.074 EUR
100000+0.066 EUR
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D10V0H1U2LP-7B D10V0H1U2LP.pdf
D10V0H1U2LP-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 10VWM 20VC DFN1006-2
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.5V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 300W
Power Line Protection: No
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
40+0.45 EUR
100+0.22 EUR
500+0.18 EUR
1000+0.13 EUR
2000+0.11 EUR
5000+0.1 EUR
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BZT52C27Q-7-F ds18004.pdf
BZT52C27Q-7-F
Hersteller: Diodes Incorporated
Description: ZENER DIODE SOD123 T&R 3K
Packaging: Tape & Reel (TR)
Tolerance: ±7.04%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.057 EUR
6000+0.053 EUR
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BZT52C27Q-7-F ds18004.pdf
BZT52C27Q-7-F
Hersteller: Diodes Incorporated
Description: ZENER DIODE SOD123 T&R 3K
Packaging: Cut Tape (CT)
Tolerance: ±7.04%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Qualification: AEC-Q101
auf Bestellung 6468 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
76+0.23 EUR
155+0.11 EUR
500+0.095 EUR
1000+0.066 EUR
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BZT52C27SQ-7-F
BZT52C27SQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 27V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±7.04%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FES2JD_HF
FES2JD_HF
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 600V 2A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Supplier Device Package: DO-221AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.13 EUR
20000+0.12 EUR
30000+0.11 EUR
Mindestbestellmenge: 10000
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ES2JA_HF ES2DA-ES2JA_LS.pdf
ES2JA_HF
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 600V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Supplier Device Package: SMA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 5000 Stücke:
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Anzahl Preis
5000+0.12 EUR
Mindestbestellmenge: 5000
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LL4151-7 LL4151.pdf
LL4151-7
Hersteller: Diodes Incorporated
Description: DIODE SWITCH 50V 500MW MINIMELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: Mini MELF
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Produkt ist nicht verfügbar
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AN431AN-ATRE1 AN431.pdf
AN431AN-ATRE1
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT ADJ 0.5% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 20ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Produkt ist nicht verfügbar
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AN431AN-ATRE1 AN431.pdf
AN431AN-ATRE1
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT ADJ 0.5% SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±0.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 20ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
auf Bestellung 2555 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
31+0.58 EUR
33+0.54 EUR
100+0.43 EUR
250+0.4 EUR
500+0.34 EUR
1000+0.26 EUR
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BABS140
BABS140
Hersteller: Diodes Incorporated
Description: PLANAR SCHOTTKY RECTIFIER ABS/SO
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: Schottky
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 40 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Produkt ist nicht verfügbar
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DMN2450UFB4-7B DMN2450UFB4.pdf
DMN2450UFB4-7B
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
auf Bestellung 8180000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.056 EUR
30000+0.054 EUR
50000+0.052 EUR
250000+0.048 EUR
Mindestbestellmenge: 10000
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DMN2450UFB4-7B DMN2450UFB4.pdf
DMN2450UFB4-7B
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
auf Bestellung 8181303 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
90+0.2 EUR
178+0.099 EUR
500+0.097 EUR
1000+0.086 EUR
2000+0.085 EUR
5000+0.077 EUR
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DMN2450UFB4-7R DMN2450UFB4.pdf
DMN2450UFB4-7R
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.067 EUR
Mindestbestellmenge: 3000
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DMN2450UFB4-7R DMN2450UFB4.pdf
DMN2450UFB4-7R
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
auf Bestellung 7448 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
71+0.25 EUR
178+0.099 EUR
Mindestbestellmenge: 44
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DMN2451UFDQ-13 DMN2451UFDQ.pdf
DMN2451UFDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 900MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 200mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN1212-3 (Type C)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN2451UFDQ-7 DMN2451UFDQ.pdf
DMN2451UFDQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 900MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 200mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN1212-3 (Type C)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 2331000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.12 EUR
15000+0.11 EUR
30000+0.1 EUR
75000+0.091 EUR
150000+0.09 EUR
Mindestbestellmenge: 3000
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FN2450038 FN2450038.pdf
FN2450038
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 24.5760MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.3V
Frequency: 24.576 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FN2450045 FN2450045.pdf
FN2450045
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 24.5760MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 24.576 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FN2450055Z FN2450055Z.pdf
FN2450055Z
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 24.5760MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 1.8V
Current - Supply (Max): 7mA
Height - Seated (Max): 0.061" (1.55mm)
Frequency: 24.576 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FD5000067 FD5000067.pdf
FD5000067
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.8V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FD5000051 FD_3-3V.pdf
FD5000051
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 50 MHz
Base Resonator: Crystal
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.32 EUR
Mindestbestellmenge: 1000
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GB2400030 GB_GG.pdf
GB2400030
Hersteller: Diodes Incorporated
Description: CRYSTAL 24.0000MHZ 18PF
Packaging: Tape & Reel (TR)
Load Capacitance: 18pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 24 MHz
Produkt ist nicht verfügbar
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GB2400038 GB_GG.pdf
GB2400038
Hersteller: Diodes Incorporated
Description: CRYSTAL 24.0000MHZ 20PF
Packaging: Tape & Reel (TR)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 30 Ohms
Frequency: 24 MHz
Produkt ist nicht verfügbar
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1N5406G_HF
1N5406G_HF
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 600V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1200+0.18 EUR
2400+0.16 EUR
3600+0.15 EUR
6000+0.14 EUR
8400+0.13 EUR
30000+0.12 EUR
60000+0.11 EUR
Mindestbestellmenge: 1200
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FD5000060 FD_3-3V.pdf
FD5000060
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 90°C
Voltage - Supply: 3.3V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FR1120004 FR_3-3V.pdf
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 11.2896MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 11.2896 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FK2450013Q FK2450013Q.pdf
FK2450013Q
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 24.5760MHZ CMOS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.9V
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 24.576 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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1N5399S_HF
1N5399S_HF
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 1000V 1.5A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Supplier Device Package: DO-41
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.041 EUR
10000+0.036 EUR
15000+0.034 EUR
Mindestbestellmenge: 5000
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SBR60A200CT SBR60A200CT.pdf
SBR60A200CT
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 200V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
auf Bestellung 6117 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.44 EUR
50+5.1 EUR
100+4.37 EUR
500+3.89 EUR
1000+3.33 EUR
2000+3.13 EUR
5000+3.01 EUR
Mindestbestellmenge: 3
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SBR60A150CT-G SBR60A150CT.pdf
SBR60A150CT-G
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 150V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
Produkt ist nicht verfügbar
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SBR60A60CT-G SBR60A60CT.pdf
SBR60A60CT-G
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 60V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar
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SBR60A300CT-2223
SBR60A300CT-2223
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 300V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Produkt ist nicht verfügbar
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SBR60A60CT-G-2223
SBR60A60CT-G-2223
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 60V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar
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SBR60A150CT-2223
SBR60A150CT-2223
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 150V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
Produkt ist nicht verfügbar
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SBR60A60CT-2223
SBR60A60CT-2223
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 60V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar
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