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DMTH10H032LPSW-13 DMTH10H032LPSW-13 Diodes Incorporated DMTH10H032LPSW.pdf Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
auf Bestellung 7967 Stücke:
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18+0.99 EUR
100+0.65 EUR
500+0.50 EUR
1000+0.45 EUR
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DML3008LFDS-7 DML3008LFDS-7 Diodes Incorporated DML3008LFDS.pdf Description: MOSFET BVDSS: 25V~30V V-DFN2020-
Packaging: Tape & Reel (TR)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-PowerVFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 7.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN2020-8 (Type N)
Fault Protection: Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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6000+1.04 EUR
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DML3008LFDS-7 DML3008LFDS-7 Diodes Incorporated DML3008LFDS.pdf Description: MOSFET BVDSS: 25V~30V V-DFN2020-
Packaging: Cut Tape (CT)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-PowerVFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 7.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN2020-8 (Type N)
Fault Protection: Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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10+2.46 EUR
25+2.08 EUR
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250+1.44 EUR
500+1.31 EUR
1000+1.20 EUR
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DMN2451UFB4Q-7R DMN2451UFB4Q-7R Diodes Incorporated DMN2451UFB4Q.pdf Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
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6000+0.07 EUR
9000+0.06 EUR
15000+0.06 EUR
21000+0.06 EUR
30000+0.05 EUR
75000+0.05 EUR
150000+0.04 EUR
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DMN2451UFB4-7B DMN2451UFB4-7B Diodes Incorporated DMN2451UFB4.pdf Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
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30000+0.07 EUR
50000+0.07 EUR
70000+0.07 EUR
100000+0.06 EUR
250000+0.06 EUR
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DML1012LDS-13 Diodes Incorporated DML1012LDS.pdf Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 39000 Stücke:
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3000+0.36 EUR
6000+0.33 EUR
9000+0.32 EUR
15000+0.30 EUR
21000+0.29 EUR
30000+0.28 EUR
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DML1012LDS-7A Diodes Incorporated DML1012LDS.pdf Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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DML10M8LDS-7 Diodes Incorporated DML10M8LDS.pdf Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 405000 Stücke:
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3000+0.41 EUR
6000+0.38 EUR
9000+0.36 EUR
15000+0.35 EUR
21000+0.34 EUR
30000+0.33 EUR
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DMTH10H032SPSW-13 DMTH10H032SPSW-13 Diodes Incorporated DMTH10H032SPSW.pdf Description: MOSFET BVDSS: 61V~100V PowerDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
Produkt ist nicht verfügbar
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DMTH10H032SPSWQ-13 DMTH10H032SPSWQ-13 Diodes Incorporated DMTH10H032SPSWQ.pdf Description: MOSFET BVDSS: 61V~100V PowerDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 27498 Stücke:
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15+1.18 EUR
18+1.03 EUR
100+0.71 EUR
500+0.59 EUR
1000+0.51 EUR
2500+0.45 EUR
5000+0.43 EUR
10000+0.40 EUR
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DMT8008LSS-13 Diodes Incorporated DMT8008LSS.pdf Description: MOSFET BVDSS: 61V-100V SO-8
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 40 V
Produkt ist nicht verfügbar
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KBP4T10 Diodes Incorporated KBP4T10.pdf Description: BRIDGE RECT 1PHASE 1KV 4A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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AP3792S-13 Diodes Incorporated Description: ACDC GEN 4 CONT SO-8 T&R 4K
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMBJ58CAQ-13-F SMBJ58CAQ-13-F Diodes Incorporated ds40740.pdf Description: TVS DIODE 58VWM 93.6VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
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3000+0.21 EUR
6000+0.20 EUR
9000+0.19 EUR
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SMBJ58CAQ-13-F SMBJ58CAQ-13-F Diodes Incorporated ds40740.pdf Description: TVS DIODE 58VWM 93.6VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13128 Stücke:
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24+0.74 EUR
33+0.55 EUR
100+0.37 EUR
500+0.29 EUR
1000+0.26 EUR
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SBR10100CTL-13-2084 Diodes Incorporated Description: DIODE ARR SBR 100V 5A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Produkt ist nicht verfügbar
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DESD2FLEX2SOQ-7 DESD2FLEX2SOQ-7 Diodes Incorporated DESD2FLEX2SOQ.pdf Description: TVS DIODE 24VWM 41VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 25pF @ 5MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 25.4V
Voltage - Clamping (Max) @ Ipp: 41V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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3000+0.17 EUR
6000+0.16 EUR
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DESD2FLEX2SOQ-7 DESD2FLEX2SOQ-7 Diodes Incorporated DESD2FLEX2SOQ.pdf Description: TVS DIODE 24VWM 41VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 25pF @ 5MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 25.4V
Voltage - Clamping (Max) @ Ipp: 41V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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25+0.70 EUR
39+0.46 EUR
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500+0.25 EUR
1000+0.22 EUR
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DMP3036SFVQ-13 Diodes Incorporated DMP3036SFVQ.pdf Description: MOSFET BVDSS: 25V~30V PowerDI333
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
Qualification: AEC-Q101
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DMP3036SFVQ-7 Diodes Incorporated DMP3036SFVQ.pdf Description: MOSFET BVDSS: 25V~30V PowerDI333
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
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BZX84B33Q-7-F BZX84B33Q-7-F Diodes Incorporated BZX84Bxxx.pdf Description: TIGHT TOLERANCE ZENER DIODE SOT2
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 63000 Stücke:
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3000+0.06 EUR
6000+0.06 EUR
9000+0.05 EUR
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SBR20A60CTFP SBR20A60CTFP Diodes Incorporated SBR20A60CT_CTB_CTFP.pdf Description: DIODE ARRAY SBR 60V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
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D30V0S1UG3LP20-7 D30V0S1UG3LP20-7 Diodes Incorporated D30V0S1UG3LP20.pdf Description: TVS DIODE 30VWM 31V UDFN20203
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 180A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V (Max)
Supplier Device Package: U-DFN2020-3 (Type C)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30.5V
Voltage - Clamping (Max) @ Ipp: 31V (Typ)
Power - Peak Pulse: 5580W (5.58kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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D30V0S1UG3LP20-7 D30V0S1UG3LP20-7 Diodes Incorporated D30V0S1UG3LP20.pdf Description: TVS DIODE 30VWM 31V UDFN20203
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 180A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V (Max)
Supplier Device Package: U-DFN2020-3 (Type C)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30.5V
Voltage - Clamping (Max) @ Ipp: 31V (Typ)
Power - Peak Pulse: 5580W (5.58kW)
Power Line Protection: No
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FMMT411FDBWQ-7 FMMT411FDBWQ-7 Diodes Incorporated FMMT411FDBWQ.pdf Description: TRANS NPN 15V 5A W-DFN2020-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 110MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 820 mW
Qualification: AEC-Q101
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FMMT411FDBWQ-7 FMMT411FDBWQ-7 Diodes Incorporated FMMT411FDBWQ.pdf Description: TRANS NPN 15V 5A W-DFN2020-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 110MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 820 mW
Qualification: AEC-Q101
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FMMT411TD FMMT411TD Diodes Incorporated FMMT411.pdf Description: TRANS NPN 15V 0.9A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23 (Type DN)
Current - Collector (Ic) (Max): 900 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 730 mW
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FMMT411QTA FMMT411QTA Diodes Incorporated FMMT411Q.pdf Description: TRANS NPN 15V 0.9A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23 (Type DN)
Grade: Automotive
Current - Collector (Ic) (Max): 900 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 800 mW
Qualification: AEC-Q101
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FH4800014 FH4800014 Diodes Incorporated FH.pdf Description: CRYSTAL 48.0000MHZ 10PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 48 MHz
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FH4800014 FH4800014 Diodes Incorporated FH.pdf Description: CRYSTAL 48.0000MHZ 10PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 48 MHz
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BZT585B16T-7 BZT585B16T-7 Diodes Incorporated BZT585BxVxT.pdf Description: DIODE ZENER 16V 350MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
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AP7351D-25FS4-7B Diodes Incorporated AP7351D.pdf Description: LDO CMOS LOWCURR X2-DFN1010-4 (T
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4 (Type B)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Current Limit, Enable
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.48V @ 150mA
Protection Features: Over Current
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AP5724FDCG-7 AP5724FDCG-7 Diodes Incorporated AP5724.pdf Description: IC LED DRVR RGLTR PWM 750MA 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: U-DFN2020-6 (Type C)
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
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AP5724FDCG-7 AP5724FDCG-7 Diodes Incorporated AP5724.pdf Description: IC LED DRVR RGLTR PWM 750MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: U-DFN2020-6 (Type C)
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
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DDZ30D-7 DDZ30D-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 30V 310MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2.5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23 V
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DDZ30D-7 DDZ30D-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 30V 310MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2.5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23 V
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RH02-T RH02-T Diodes Incorporated ds30137.pdf Description: RECTIFIER BRIDGE SMT 0.5A 200V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MiniDIP
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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ZXGD3114N7TC ZXGD3114N7TC Diodes Incorporated ZXGD3114N7.pdf Description: OR'ING CONTROLLER SO-7 T&R 2.5K
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Supply: 4V ~ 20V
Supplier Device Package: 7-SO
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ZXGD3114N7TC ZXGD3114N7TC Diodes Incorporated ZXGD3114N7.pdf Description: OR'ING CONTROLLER SO-7 T&R 2.5K
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Supply: 4V ~ 20V
Supplier Device Package: 7-SO
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APX803L20-49SA-7 APX803L20-49SA-7 Diodes Incorporated APX803L.pdf Description: IC SUPERVISOR 1 CHANNEL SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 143ms Minimum
Voltage - Threshold: 4.9V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
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PI6C49CB01JWEX Diodes Incorporated PI6C49CB01J.pdf Description: IC CLK TRANSLTR 1:1 360MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Translator
Input: HCSL, LVDS, LVHSTL, LVPECL, SSTL
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/No
Supplier Device Package: 8-SOIC
Frequency - Max: 360 MHz
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PI6C49CB01JWEX Diodes Incorporated PI6C49CB01J.pdf Description: IC CLK TRANSLTR 1:1 360MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Translator
Input: HCSL, LVDS, LVHSTL, LVPECL, SSTL
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/No
Supplier Device Package: 8-SOIC
Frequency - Max: 360 MHz
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PI6C49X0201WIEX PI6C49X0201WIEX Diodes Incorporated PI6C49X0201.pdf Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Unidirectional
Output Signal: LVCMOS, LVTTL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: HCSL, LVDS, LVHSTL, LVPECL, SSTL
Number of Circuits: 1
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PI6C49X0201WIEX PI6C49X0201WIEX Diodes Incorporated PI6C49X0201.pdf Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Unidirectional
Output Signal: LVCMOS, LVTTL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: HCSL, LVDS, LVHSTL, LVPECL, SSTL
Number of Circuits: 1
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DMC6040SSDQ-13 DMC6040SSDQ-13 Diodes Incorporated DMC6040SSDQ.pdf Description: MOSFET N/P-CH 60V 5.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V, 110mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 19.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
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DMC6040SSDQ-13 DMC6040SSDQ-13 Diodes Incorporated DMC6040SSDQ.pdf Description: MOSFET N/P-CH 60V 5.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V, 110mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 19.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
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B370CE-13 B370CE-13 Diodes Incorporated B370%28B%2CC%29E%20-%20B3100%28B%2CC%29E.pdf Description: DIODE SCHOTTKY 70V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 70 V
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B390CE-13 B390CE-13 Diodes Incorporated B370%28B%2CC%29E%20-%20B3100%28B%2CC%29E.pdf Description: DIODE SCHOTTKY 90V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 90 V
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DMC2991UDJ-7 DMC2991UDJ-7 Diodes Incorporated DMC2991UDJ.pdf Description: MOSFET N/P-CH 20V 0.5A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
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DMC2991UDJ-7 DMC2991UDJ-7 Diodes Incorporated DMC2991UDJ.pdf Description: MOSFET N/P-CH 20V 0.5A SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
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DMC2710UDW-7 DMC2710UDW-7 Diodes Incorporated DMC2710UDW.pdf Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
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DMC2710UDW-7 DMC2710UDW-7 Diodes Incorporated DMC2710UDW.pdf Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
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DMC2710UDWQ-7 DMC2710UDWQ-7 Diodes Incorporated DMC2710UDWQ.pdf Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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DMC2710UDWQ-7 DMC2710UDWQ-7 Diodes Incorporated DMC2710UDWQ.pdf Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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DMC2710UV-7 DMC2710UV-7 Diodes Incorporated DMC2710UV.pdf Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
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DMC2710UV-7 DMC2710UV-7 Diodes Incorporated DMC2710UV.pdf Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
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DMG6602SVTX-7 DMG6602SVTX-7 Diodes Incorporated DMG6602SVT.pdf Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, 420pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 9nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
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DMG6602SVTX-7 DMG6602SVTX-7 Diodes Incorporated DMG6602SVT.pdf Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, 420pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 9nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3463 Stücke:
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30+0.60 EUR
44+0.41 EUR
100+0.21 EUR
500+0.20 EUR
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DMC3071LVT-7 DMC3071LVT-7 Diodes Incorporated DMC3071LVT.pdf Description: MOSFET N/P-CH 30V 4.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
auf Bestellung 33000 Stücke:
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3000+0.18 EUR
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DMC3071LVT-7 DMC3071LVT-7 Diodes Incorporated DMC3071LVT.pdf Description: MOSFET N/P-CH 30V 4.6A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
auf Bestellung 34902 Stücke:
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DMTH10H032LPSW-13 DMTH10H032LPSW.pdf
DMTH10H032LPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
auf Bestellung 7967 Stücke:
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Anzahl Preis
11+1.60 EUR
18+0.99 EUR
100+0.65 EUR
500+0.50 EUR
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DML3008LFDS-7 DML3008LFDS.pdf
DML3008LFDS-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V V-DFN2020-
Packaging: Tape & Reel (TR)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-PowerVFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 7.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN2020-8 (Type N)
Fault Protection: Over Temperature
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 339000 Stücke:
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Anzahl Preis
3000+1.06 EUR
6000+1.04 EUR
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DML3008LFDS-7 DML3008LFDS.pdf
DML3008LFDS-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V V-DFN2020-
Packaging: Cut Tape (CT)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-PowerVFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 7.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN2020-8 (Type N)
Fault Protection: Over Temperature
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 340823 Stücke:
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Anzahl Preis
5+3.92 EUR
10+2.46 EUR
25+2.08 EUR
100+1.65 EUR
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DMN2451UFB4Q-7R DMN2451UFB4Q.pdf
DMN2451UFB4Q-7R
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 246000 Stücke:
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Anzahl Preis
3000+0.08 EUR
6000+0.07 EUR
9000+0.06 EUR
15000+0.06 EUR
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75000+0.05 EUR
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DMN2451UFB4-7B DMN2451UFB4.pdf
DMN2451UFB4-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
auf Bestellung 460000 Stücke:
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Anzahl Preis
10000+0.08 EUR
20000+0.08 EUR
30000+0.07 EUR
50000+0.07 EUR
70000+0.07 EUR
100000+0.06 EUR
250000+0.06 EUR
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DML1012LDS-13 DML1012LDS.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.36 EUR
6000+0.33 EUR
9000+0.32 EUR
15000+0.30 EUR
21000+0.29 EUR
30000+0.28 EUR
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DML1012LDS-7A DML1012LDS.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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DML10M8LDS-7 DML10M8LDS.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 405000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.41 EUR
6000+0.38 EUR
9000+0.36 EUR
15000+0.35 EUR
21000+0.34 EUR
30000+0.33 EUR
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DMTH10H032SPSW-13 DMTH10H032SPSW.pdf
DMTH10H032SPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V PowerDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
Produkt ist nicht verfügbar
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DMTH10H032SPSWQ-13 DMTH10H032SPSWQ.pdf
DMTH10H032SPSWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V PowerDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 27498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.18 EUR
18+1.03 EUR
100+0.71 EUR
500+0.59 EUR
1000+0.51 EUR
2500+0.45 EUR
5000+0.43 EUR
10000+0.40 EUR
Mindestbestellmenge: 15
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DMT8008LSS-13 DMT8008LSS.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V-100V SO-8
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 40 V
Produkt ist nicht verfügbar
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KBP4T10 KBP4T10.pdf
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 4A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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AP3792S-13
Hersteller: Diodes Incorporated
Description: ACDC GEN 4 CONT SO-8 T&R 4K
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMBJ58CAQ-13-F ds40740.pdf
SMBJ58CAQ-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 58VWM 93.6VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.21 EUR
6000+0.20 EUR
9000+0.19 EUR
Mindestbestellmenge: 3000
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SMBJ58CAQ-13-F ds40740.pdf
SMBJ58CAQ-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 58VWM 93.6VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13128 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
33+0.55 EUR
100+0.37 EUR
500+0.29 EUR
1000+0.26 EUR
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SBR10100CTL-13-2084
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 100V 5A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Produkt ist nicht verfügbar
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DESD2FLEX2SOQ-7 DESD2FLEX2SOQ.pdf
DESD2FLEX2SOQ-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 24VWM 41VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 25pF @ 5MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 25.4V
Voltage - Clamping (Max) @ Ipp: 41V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
6000+0.16 EUR
Mindestbestellmenge: 3000
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DESD2FLEX2SOQ-7 DESD2FLEX2SOQ.pdf
DESD2FLEX2SOQ-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 24VWM 41VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 25pF @ 5MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 25.4V
Voltage - Clamping (Max) @ Ipp: 41V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 17288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.70 EUR
39+0.46 EUR
100+0.31 EUR
500+0.25 EUR
1000+0.22 EUR
Mindestbestellmenge: 25
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DMP3036SFVQ-13 DMP3036SFVQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V PowerDI333
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMP3036SFVQ-7 DMP3036SFVQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V PowerDI333
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.34 EUR
Mindestbestellmenge: 2000
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BZX84B33Q-7-F BZX84Bxxx.pdf
BZX84B33Q-7-F
Hersteller: Diodes Incorporated
Description: TIGHT TOLERANCE ZENER DIODE SOT2
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
6000+0.06 EUR
9000+0.05 EUR
Mindestbestellmenge: 3000
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SBR20A60CTFP SBR20A60CT_CTB_CTFP.pdf
SBR20A60CTFP
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 60V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
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D30V0S1UG3LP20-7 D30V0S1UG3LP20.pdf
D30V0S1UG3LP20-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 30VWM 31V UDFN20203
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 180A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V (Max)
Supplier Device Package: U-DFN2020-3 (Type C)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30.5V
Voltage - Clamping (Max) @ Ipp: 31V (Typ)
Power - Peak Pulse: 5580W (5.58kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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D30V0S1UG3LP20-7 D30V0S1UG3LP20.pdf
D30V0S1UG3LP20-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 30VWM 31V UDFN20203
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 180A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V (Max)
Supplier Device Package: U-DFN2020-3 (Type C)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30.5V
Voltage - Clamping (Max) @ Ipp: 31V (Typ)
Power - Peak Pulse: 5580W (5.58kW)
Power Line Protection: No
auf Bestellung 218 Stücke:
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Anzahl Preis
29+0.62 EUR
43+0.42 EUR
100+0.28 EUR
Mindestbestellmenge: 29
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FMMT411FDBWQ-7 FMMT411FDBWQ.pdf
FMMT411FDBWQ-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 15V 5A W-DFN2020-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 110MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 820 mW
Qualification: AEC-Q101
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.52 EUR
Mindestbestellmenge: 3000
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FMMT411FDBWQ-7 FMMT411FDBWQ.pdf
FMMT411FDBWQ-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 15V 5A W-DFN2020-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 110MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 820 mW
Qualification: AEC-Q101
auf Bestellung 35601 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.23 EUR
10+4.77 EUR
100+3.37 EUR
500+2.77 EUR
1000+2.58 EUR
Mindestbestellmenge: 3
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FMMT411TD FMMT411.pdf
FMMT411TD
Hersteller: Diodes Incorporated
Description: TRANS NPN 15V 0.9A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23 (Type DN)
Current - Collector (Ic) (Max): 900 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 730 mW
auf Bestellung 16741 Stücke:
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Anzahl Preis
3+6.32 EUR
10+4.14 EUR
100+2.90 EUR
Mindestbestellmenge: 3
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FMMT411QTA FMMT411Q.pdf
FMMT411QTA
Hersteller: Diodes Incorporated
Description: TRANS NPN 15V 0.9A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23 (Type DN)
Grade: Automotive
Current - Collector (Ic) (Max): 900 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 800 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FH4800014 FH.pdf
FH4800014
Hersteller: Diodes Incorporated
Description: CRYSTAL 48.0000MHZ 10PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 48 MHz
auf Bestellung 3000 Stücke:
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3000+0.78 EUR
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FH4800014 FH.pdf
FH4800014
Hersteller: Diodes Incorporated
Description: CRYSTAL 48.0000MHZ 10PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 48 MHz
auf Bestellung 5019 Stücke:
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Anzahl Preis
13+1.41 EUR
15+1.24 EUR
50+1.16 EUR
100+1.02 EUR
500+0.97 EUR
1000+0.81 EUR
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BZT585B16T-7 BZT585BxVxT.pdf
BZT585B16T-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 16V 350MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
auf Bestellung 673375 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
117+0.15 EUR
233+0.08 EUR
500+0.07 EUR
1000+0.07 EUR
Mindestbestellmenge: 84
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AP7351D-25FS4-7B AP7351D.pdf
Hersteller: Diodes Incorporated
Description: LDO CMOS LOWCURR X2-DFN1010-4 (T
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4 (Type B)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Current Limit, Enable
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.48V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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AP5724FDCG-7 AP5724.pdf
AP5724FDCG-7
Hersteller: Diodes Incorporated
Description: IC LED DRVR RGLTR PWM 750MA 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: U-DFN2020-6 (Type C)
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
auf Bestellung 21000 Stücke:
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Anzahl Preis
3000+0.33 EUR
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AP5724FDCG-7 AP5724.pdf
AP5724FDCG-7
Hersteller: Diodes Incorporated
Description: IC LED DRVR RGLTR PWM 750MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: U-DFN2020-6 (Type C)
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.80 EUR
17+1.09 EUR
25+0.90 EUR
100+0.69 EUR
250+0.59 EUR
500+0.53 EUR
1000+0.48 EUR
Mindestbestellmenge: 10
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DDZ30D-7 DDZ5V1B-DDZ43.pdf
DDZ30D-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 30V 310MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2.5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.07 EUR
6000+0.07 EUR
9000+0.05 EUR
Mindestbestellmenge: 3000
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DDZ30D-7 DDZ5V1B-DDZ43.pdf
DDZ30D-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 30V 310MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2.5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
62+0.29 EUR
126+0.14 EUR
500+0.12 EUR
1000+0.08 EUR
Mindestbestellmenge: 42
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RH02-T ds30137.pdf
RH02-T
Hersteller: Diodes Incorporated
Description: RECTIFIER BRIDGE SMT 0.5A 200V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MiniDIP
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.39 EUR
6000+0.37 EUR
9000+0.34 EUR
Mindestbestellmenge: 3000
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ZXGD3114N7TC ZXGD3114N7.pdf
ZXGD3114N7TC
Hersteller: Diodes Incorporated
Description: OR'ING CONTROLLER SO-7 T&R 2.5K
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Supply: 4V ~ 20V
Supplier Device Package: 7-SO
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.78 EUR
Mindestbestellmenge: 2500
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ZXGD3114N7TC ZXGD3114N7.pdf
ZXGD3114N7TC
Hersteller: Diodes Incorporated
Description: OR'ING CONTROLLER SO-7 T&R 2.5K
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Supply: 4V ~ 20V
Supplier Device Package: 7-SO
auf Bestellung 14309 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.67 EUR
10+3.62 EUR
25+3.09 EUR
100+2.49 EUR
250+2.20 EUR
500+2.02 EUR
1000+1.86 EUR
Mindestbestellmenge: 4
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APX803L20-49SA-7 APX803L.pdf
APX803L20-49SA-7
Hersteller: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 143ms Minimum
Voltage - Threshold: 4.9V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
6000+0.17 EUR
15000+0.16 EUR
30000+0.15 EUR
Mindestbestellmenge: 3000
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PI6C49CB01JWEX PI6C49CB01J.pdf
Hersteller: Diodes Incorporated
Description: IC CLK TRANSLTR 1:1 360MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Translator
Input: HCSL, LVDS, LVHSTL, LVPECL, SSTL
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/No
Supplier Device Package: 8-SOIC
Frequency - Max: 360 MHz
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.87 EUR
5000+0.83 EUR
Mindestbestellmenge: 2500
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PI6C49CB01JWEX PI6C49CB01J.pdf
Hersteller: Diodes Incorporated
Description: IC CLK TRANSLTR 1:1 360MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Translator
Input: HCSL, LVDS, LVHSTL, LVPECL, SSTL
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/No
Supplier Device Package: 8-SOIC
Frequency - Max: 360 MHz
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
10+1.83 EUR
25+1.74 EUR
100+1.43 EUR
250+1.34 EUR
500+1.18 EUR
1000+0.93 EUR
Mindestbestellmenge: 9
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PI6C49X0201WIEX PI6C49X0201.pdf
PI6C49X0201WIEX
Hersteller: Diodes Incorporated
Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Unidirectional
Output Signal: LVCMOS, LVTTL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: HCSL, LVDS, LVHSTL, LVPECL, SSTL
Number of Circuits: 1
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.02 EUR
Mindestbestellmenge: 2500
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PI6C49X0201WIEX PI6C49X0201.pdf
PI6C49X0201WIEX
Hersteller: Diodes Incorporated
Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Unidirectional
Output Signal: LVCMOS, LVTTL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: HCSL, LVDS, LVHSTL, LVPECL, SSTL
Number of Circuits: 1
auf Bestellung 17641 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.35 EUR
10+4.07 EUR
25+3.48 EUR
100+2.81 EUR
250+2.48 EUR
500+2.28 EUR
1000+2.11 EUR
Mindestbestellmenge: 3
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DMC6040SSDQ-13 DMC6040SSDQ.pdf
DMC6040SSDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V 5.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V, 110mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 19.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMC6040SSDQ-13 DMC6040SSDQ.pdf
DMC6040SSDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V 5.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V, 110mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 19.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2264 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
17+1.06 EUR
100+0.73 EUR
500+0.61 EUR
1000+0.56 EUR
Mindestbestellmenge: 13
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B370CE-13 B370%28B%2CC%29E%20-%20B3100%28B%2CC%29E.pdf
B370CE-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 70V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 70 V
Produkt ist nicht verfügbar
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B390CE-13 B370%28B%2CC%29E%20-%20B3100%28B%2CC%29E.pdf
B390CE-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 90V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 90 V
Produkt ist nicht verfügbar
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DMC2991UDJ-7 DMC2991UDJ.pdf
DMC2991UDJ-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.5A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
auf Bestellung 510000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.08 EUR
20000+0.07 EUR
30000+0.07 EUR
50000+0.06 EUR
70000+0.06 EUR
100000+0.06 EUR
250000+0.06 EUR
Mindestbestellmenge: 10000
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DMC2991UDJ-7 DMC2991UDJ.pdf
DMC2991UDJ-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.5A SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
auf Bestellung 519695 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
64+0.28 EUR
103+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.10 EUR
5000+0.09 EUR
Mindestbestellmenge: 39
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DMC2710UDW-7 DMC2710UDW.pdf
DMC2710UDW-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.10 EUR
6000+0.09 EUR
Mindestbestellmenge: 3000
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DMC2710UDW-7 DMC2710UDW.pdf
DMC2710UDW-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 6126 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
54+0.33 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 34
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DMC2710UDWQ-7 DMC2710UDWQ.pdf
DMC2710UDWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.10 EUR
6000+0.10 EUR
9000+0.08 EUR
15000+0.08 EUR
Mindestbestellmenge: 3000
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DMC2710UDWQ-7 DMC2710UDWQ.pdf
DMC2710UDWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 25555 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
54+0.33 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 34
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DMC2710UV-7 DMC2710UV.pdf
DMC2710UV-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 87000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
6000+0.14 EUR
9000+0.12 EUR
75000+0.11 EUR
Mindestbestellmenge: 3000
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DMC2710UV-7 DMC2710UV.pdf
DMC2710UV-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 90526 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
40+0.45 EUR
100+0.28 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 24
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DMG6602SVTX-7 DMG6602SVT.pdf
DMG6602SVTX-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, 420pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 9nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
Mindestbestellmenge: 3000
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DMG6602SVTX-7 DMG6602SVT.pdf
DMG6602SVTX-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, 420pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 9nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3463 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.60 EUR
44+0.41 EUR
100+0.21 EUR
500+0.20 EUR
1000+0.18 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
DMC3071LVT-7 DMC3071LVT.pdf
DMC3071LVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 4.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
6000+0.17 EUR
9000+0.16 EUR
15000+0.15 EUR
21000+0.14 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMC3071LVT-7 DMC3071LVT.pdf
DMC3071LVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 4.6A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
auf Bestellung 34902 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
35+0.51 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.21 EUR
Mindestbestellmenge: 22
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