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DSC10A065D1-13 DSC10A065D1-13 Diodes Incorporated DSC10A065D1.pdf Description: DIODE SIL CARBIDE 650V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 434pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
auf Bestellung 9456 Stücke:
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4+4.95 EUR
10+3.22 EUR
100+2.23 EUR
500+1.89 EUR
Mindestbestellmenge: 4
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AP7340-18FS4-7 AP7340-18FS4-7 Diodes Incorporated AP7340.pdf Description: IC REG LINEAR 1.8V 150MA 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.42V @ 150mA
Protection Features: Over Current
Current - Supply (Max): 100 µA
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5000+0.18 EUR
10000+0.17 EUR
15000+0.16 EUR
25000+0.15 EUR
50000+0.14 EUR
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AP7340-18FS4-7 AP7340-18FS4-7 Diodes Incorporated AP7340.pdf Description: IC REG LINEAR 1.8V 150MA 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.42V @ 150mA
Protection Features: Over Current
Current - Supply (Max): 100 µA
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34+0.53 EUR
41+0.44 EUR
100+0.33 EUR
250+0.28 EUR
500+0.25 EUR
1000+0.23 EUR
2500+0.2 EUR
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BAS16Q-13-F BAS16Q-13-F Diodes Incorporated BAS16_MMBD4148_MMBD914.pdf Description: DIODE STANDARD 75V 300MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
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10000+0.034 EUR
20000+0.029 EUR
30000+0.028 EUR
50000+0.027 EUR
70000+0.026 EUR
100000+0.025 EUR
250000+0.024 EUR
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BAS16Q-13-F BAS16Q-13-F Diodes Incorporated BAS16_MMBD4148_MMBD914.pdf Description: DIODE STANDARD 75V 300MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
auf Bestellung 807986 Stücke:
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91+0.19 EUR
139+0.13 EUR
232+0.076 EUR
500+0.058 EUR
1000+0.05 EUR
2000+0.046 EUR
5000+0.042 EUR
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BAS16Q-7-F BAS16Q-7-F Diodes Incorporated BAS16_MMBD4148_MMBD914.pdf Description: DIODE STANDARD 75V 300MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
auf Bestellung 888000 Stücke:
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6000+0.029 EUR
9000+0.026 EUR
15000+0.025 EUR
21000+0.024 EUR
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DDZ20ASF-7 DDZ20ASF-7 Diodes Incorporated ds31987.pdf Description: DIODE ZENER 18.51V 500MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2.46%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18.51 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 17.1 V
auf Bestellung 87000 Stücke:
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9000+0.038 EUR
30000+0.035 EUR
75000+0.03 EUR
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DDZ20ASF-7 DDZ20ASF-7 Diodes Incorporated ds31987.pdf Description: DIODE ZENER 18.51V 500MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2.46%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18.51 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 17.1 V
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170+0.1 EUR
500+0.081 EUR
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DDZ20DSF-7 DDZ20DSF-7 Diodes Incorporated ds31987.pdf Description: DIODE ZENER 20.22V 500MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20.22 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 18.7 V
auf Bestellung 135000 Stücke:
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3000+0.058 EUR
6000+0.055 EUR
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30000+0.043 EUR
75000+0.037 EUR
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DDZ20DSF-7 DDZ20DSF-7 Diodes Incorporated ds31987.pdf Description: DIODE ZENER 20.22V 500MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20.22 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 18.7 V
auf Bestellung 135156 Stücke:
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75+0.24 EUR
137+0.13 EUR
500+0.1 EUR
1000+0.07 EUR
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DDZ20C-7-79 Diodes Incorporated Description: DIODE ZENER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SF30DG-B SF30DG-B Diodes Incorporated SF30AG_-_SF30JG.pdf Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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PI3CH480ZHDEX PI3CH480ZHDEX Diodes Incorporated PI3CH480.pdf Description: IC MUX/DEMUX 4 X 2:1 16UQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 2.25V ~ 2.75V, 2.97V ~ 3.63V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-UQFN (3x3)
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PI3CH480ZHDEX PI3CH480ZHDEX Diodes Incorporated PI3CH480.pdf Description: IC MUX/DEMUX 4 X 2:1 16UQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 2.25V ~ 2.75V, 2.97V ~ 3.63V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-UQFN (3x3)
auf Bestellung 3500 Stücke:
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17+1.07 EUR
19+0.95 EUR
25+0.89 EUR
100+0.72 EUR
250+0.67 EUR
500+0.57 EUR
1000+0.46 EUR
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DMTH48M3SFVW-7 DMTH48M3SFVW-7 Diodes Incorporated DMTH48M3SFVW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
auf Bestellung 8000 Stücke:
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2000+0.35 EUR
6000+0.34 EUR
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DMTH48M3SFVWQ-7 DMTH48M3SFVWQ-7 Diodes Incorporated DMTH48M3SFVWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH48M3SFVWQ-13 DMTH48M3SFVWQ-13 Diodes Incorporated DMTH48M3SFVWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PI3CH3345ZHEX Diodes Incorporated PI3CH3345.pdf Description: BUS SWITCH 3V W-QFN3545-20
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 3.63V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 20-TQFN (4.5x3.5)
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PI3CH3345ZHEX Diodes Incorporated PI3CH3345.pdf Description: BUS SWITCH 3V W-QFN3545-20
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 3.63V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 20-TQFN (4.5x3.5)
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4+4.96 EUR
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SMAJ200CA-13-F SMAJ200CA-13-F Diodes Incorporated SMAJ5.0CA-SMAJ200CA.pdf Description: TVS DIODE 200VWM 324VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.2A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 224V
Voltage - Clamping (Max) @ Ipp: 324V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJ200CA-13-F SMAJ200CA-13-F Diodes Incorporated SMAJ5.0CA-SMAJ200CA.pdf Description: TVS DIODE 200VWM 324VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.2A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 224V
Voltage - Clamping (Max) @ Ipp: 324V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 164890 Stücke:
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25+0.72 EUR
36+0.49 EUR
100+0.23 EUR
500+0.22 EUR
1000+0.21 EUR
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KBP304G KBP304G Diodes Incorporated KBP304G-KBP310G.pdf Description: BRIDGE 1-PH KBP 400V 2A 150C
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 239 Stücke:
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12+1.53 EUR
35+0.83 EUR
105+0.7 EUR
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DMT47M2SFVW-7 DMT47M2SFVW-7 Diodes Incorporated DMT47M2SFVW.pdf Description: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
auf Bestellung 112000 Stücke:
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2000+0.41 EUR
6000+0.38 EUR
10000+0.36 EUR
Mindestbestellmenge: 2000
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DMT47M2SFVW-7 DMT47M2SFVW-7 Diodes Incorporated DMT47M2SFVW.pdf Description: MOSFET N-CH 40V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
auf Bestellung 112000 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.07 EUR
20+0.92 EUR
100+0.64 EUR
500+0.53 EUR
1000+0.45 EUR
Mindestbestellmenge: 17
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DMT47M2LDVQ-7 Diodes Incorporated DMT47M2LDVQ.pdf Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
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DMT47M2LDVQ-7 Diodes Incorporated DMT47M2LDVQ.pdf Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Grade: Automotive
Qualification: AEC-Q101
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DMT47M2SFVWQ-7 DMT47M2SFVWQ-7 Diodes Incorporated DMT47M2SFVWQ.pdf Description: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
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DMT47M2SFVWQ-7 DMT47M2SFVWQ-7 Diodes Incorporated DMT47M2SFVWQ.pdf Description: MOSFET N-CH 40V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
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DMT47M2SFVWQ-13 DMT47M2SFVWQ-13 Diodes Incorporated DMT47M2SFVWQ.pdf Description: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
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DMT47M2LDV-13 Diodes Incorporated DMT47M2LDV.pdf Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
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DMT47M2LDV-7 Diodes Incorporated DMT47M2LDV.pdf Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
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3.0SMCJ18CA-13 3.0SMCJ18CA-13 Diodes Incorporated 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 102.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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SBR20A300CTB-13 SBR20A300CTB-13 Diodes Incorporated SBR20A300.pdf Description: DIODE ARRAY SBR 300V 10A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
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SBR20A300CTB-13 SBR20A300CTB-13 Diodes Incorporated SBR20A300.pdf Description: DIODE ARRAY SBR 300V 10A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
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DDZ23-7 DDZ23-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 23V 470MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 23 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: SOD-123
Power - Max: 470 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 19 V
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DDZ23-7 DDZ23-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 23V 470MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 23 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: SOD-123
Power - Max: 470 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 19 V
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DZ23C20-7-F DZ23C20-7-F Diodes Incorporated DZ23C2V7-DZ23C51.pdf Description: DIODE ZENER ARRAY 20V SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
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DZ23C20-7-F DZ23C20-7-F Diodes Incorporated DZ23C2V7-DZ23C51.pdf Description: DIODE ZENER ARRAY 20V SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
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RS2G-13-F RS2G-13-F Diodes Incorporated ds15004.pdf Description: DIODE STANDARD 400V 1.5A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS2G-13-F RS2G-13-F Diodes Incorporated ds15004.pdf Description: DIODE STANDARD 400V 1.5A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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DMP58D1LV-13 DMP58D1LV-13 Diodes Incorporated DMP58D1LV.pdf Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
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DMP58D1LV-13 DMP58D1LV-13 Diodes Incorporated DMP58D1LV.pdf Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
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DMP58D1LV-7 DMP58D1LV-7 Diodes Incorporated DMP58D1LV.pdf Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
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DMP58D1LV-7 DMP58D1LV-7 Diodes Incorporated DMP58D1LV.pdf Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
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DMP58D1LVQ-13 DMP58D1LVQ-13 Diodes Incorporated DMP58D1LVQ.pdf Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
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DMP58D1LVQ-7 DMP58D1LVQ-7 Diodes Incorporated DMP58D1LVQ.pdf Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
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SMAJ110A-13-F SMAJ110A-13-F Diodes Incorporated SMAJ5.0CA-SMAJ200CA.pdf Description: TVS DIODE 110VWM 177VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJ110A-13 SMAJ110A-13 Diodes Incorporated SMAJ5.0%20170%20C%20A.pdf Description: TVS DIODE 110VWM 177VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 400W
Power Line Protection: Yes
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SMAJ110A-13 SMAJ110A-13 Diodes Incorporated SMAJ5.0%20170%20C%20A.pdf Description: TVS DIODE 110VWM 177VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 400W
Power Line Protection: Yes
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DMN3012LFG-13 DMN3012LFG-13 Diodes Incorporated DMN3012LFG.pdf Description: MOSFET 2N-CH 30V 20A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type D)
Produkt ist nicht verfügbar
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DMN3012LFG-7 DMN3012LFG-7 Diodes Incorporated DMN3012LFG.pdf Description: MOSFET 2N-CH 30V 20A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type D)
Produkt ist nicht verfügbar
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DMG6968UTS-13 DMG6968UTS-13 Diodes Incorporated ds31793.pdf Description: MOSFET 2N-CH 20V 5.2A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 8-TSSOP
Produkt ist nicht verfügbar
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DMG6968UTS-13 DMG6968UTS-13 Diodes Incorporated ds31793.pdf Description: MOSFET 2N-CH 20V 5.2A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 8-TSSOP
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DDZ5V6BQ-7 DDZ5V6BQ-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 5.6V 310MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 2.5 V
Qualification: AEC-Q101
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DDZ5V6BQ-7 DDZ5V6BQ-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 5.6V 310MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 2.5 V
Qualification: AEC-Q101
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B250BE-13 B250BE-13 Diodes Incorporated B250%28A%2CB%29E%2C%20B260%28A%2CB%29E.pdf Description: DIODE SCHOTTKY 50V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Produkt ist nicht verfügbar
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PI3EQX1014ZTFEX Diodes Incorporated PI3EQX1014-Product-Brief.pdf Description: USB3 EQX U-QFN2545-34 T&R 3.5K
Packaging: Tape & Reel (TR)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 3.3V
Applications: USB 3.2
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UTQFN (2.5x4.5)
Signal Conditioning: Input Equalization
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PI3EQX1014ZTFEX Diodes Incorporated PI3EQX1014-Product-Brief.pdf Description: USB3 EQX U-QFN2545-34 T&R 3.5K
Packaging: Cut Tape (CT)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 3.3V
Applications: USB 3.2
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UTQFN (2.5x4.5)
Signal Conditioning: Input Equalization
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PI3EQX2024ZTFEX Diodes Incorporated PI3EQX2024.pdf Description: USB3 EQX U-QFN2545-34 T&R 3.5K
Packaging: Tape & Reel (TR)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: USB
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UTQFN (2.5x4.5)
Signal Conditioning: Input Equalization
Produkt ist nicht verfügbar
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PI3EQX2024ZTFEX Diodes Incorporated PI3EQX2024.pdf Description: USB3 EQX U-QFN2545-34 T&R 3.5K
Packaging: Cut Tape (CT)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: USB
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UTQFN (2.5x4.5)
Signal Conditioning: Input Equalization
auf Bestellung 3487 Stücke:
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4+4.89 EUR
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DSC10A065D1-13 DSC10A065D1.pdf
DSC10A065D1-13
Hersteller: Diodes Incorporated
Description: DIODE SIL CARBIDE 650V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 434pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
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4+4.95 EUR
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AP7340-18FS4-7 AP7340.pdf
AP7340-18FS4-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1.8V 150MA 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.42V @ 150mA
Protection Features: Over Current
Current - Supply (Max): 100 µA
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5000+0.18 EUR
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AP7340-18FS4-7 AP7340.pdf
AP7340-18FS4-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1.8V 150MA 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.42V @ 150mA
Protection Features: Over Current
Current - Supply (Max): 100 µA
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21+0.84 EUR
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41+0.44 EUR
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BAS16Q-13-F BAS16_MMBD4148_MMBD914.pdf
BAS16Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 75V 300MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
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10000+0.034 EUR
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100000+0.025 EUR
250000+0.024 EUR
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BAS16Q-13-F BAS16_MMBD4148_MMBD914.pdf
BAS16Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 75V 300MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
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91+0.19 EUR
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BAS16Q-7-F BAS16_MMBD4148_MMBD914.pdf
BAS16Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 75V 300MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
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3000+0.034 EUR
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DDZ20ASF-7 ds31987.pdf
DDZ20ASF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 18.51V 500MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2.46%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18.51 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 17.1 V
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DDZ20ASF-7 ds31987.pdf
DDZ20ASF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 18.51V 500MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2.46%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18.51 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 17.1 V
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DDZ20DSF-7 ds31987.pdf
DDZ20DSF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 20.22V 500MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20.22 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 18.7 V
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3000+0.058 EUR
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DDZ20DSF-7 ds31987.pdf
DDZ20DSF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 20.22V 500MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20.22 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 18.7 V
auf Bestellung 135156 Stücke:
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DDZ20C-7-79
Hersteller: Diodes Incorporated
Description: DIODE ZENER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SF30DG-B SF30AG_-_SF30JG.pdf
SF30DG-B
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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PI3CH480ZHDEX PI3CH480.pdf
PI3CH480ZHDEX
Hersteller: Diodes Incorporated
Description: IC MUX/DEMUX 4 X 2:1 16UQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 2.25V ~ 2.75V, 2.97V ~ 3.63V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-UQFN (3x3)
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3500+0.41 EUR
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PI3CH480ZHDEX PI3CH480.pdf
PI3CH480ZHDEX
Hersteller: Diodes Incorporated
Description: IC MUX/DEMUX 4 X 2:1 16UQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 2.25V ~ 2.75V, 2.97V ~ 3.63V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-UQFN (3x3)
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17+1.07 EUR
19+0.95 EUR
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100+0.72 EUR
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DMTH48M3SFVW-7 DMTH48M3SFVW.pdf
DMTH48M3SFVW-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.35 EUR
6000+0.34 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
DMTH48M3SFVWQ-7 DMTH48M3SFVWQ.pdf
DMTH48M3SFVWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH48M3SFVWQ-13 DMTH48M3SFVWQ.pdf
DMTH48M3SFVWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PI3CH3345ZHEX PI3CH3345.pdf
Hersteller: Diodes Incorporated
Description: BUS SWITCH 3V W-QFN3545-20
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 3.63V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 20-TQFN (4.5x3.5)
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+1.43 EUR
Mindestbestellmenge: 3500
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PI3CH3345ZHEX PI3CH3345.pdf
Hersteller: Diodes Incorporated
Description: BUS SWITCH 3V W-QFN3545-20
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 3.63V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 20-TQFN (4.5x3.5)
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.96 EUR
Mindestbestellmenge: 4
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SMAJ200CA-13-F SMAJ5.0CA-SMAJ200CA.pdf
SMAJ200CA-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 200VWM 324VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.2A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 224V
Voltage - Clamping (Max) @ Ipp: 324V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 160000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.17 EUR
Mindestbestellmenge: 5000
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SMAJ200CA-13-F SMAJ5.0CA-SMAJ200CA.pdf
SMAJ200CA-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 200VWM 324VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.2A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 224V
Voltage - Clamping (Max) @ Ipp: 324V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 164890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
36+0.49 EUR
100+0.23 EUR
500+0.22 EUR
1000+0.21 EUR
Mindestbestellmenge: 25
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KBP304G KBP304G-KBP310G.pdf
KBP304G
Hersteller: Diodes Incorporated
Description: BRIDGE 1-PH KBP 400V 2A 150C
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.53 EUR
35+0.83 EUR
105+0.7 EUR
Mindestbestellmenge: 12
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DMT47M2SFVW-7 DMT47M2SFVW.pdf
DMT47M2SFVW-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
auf Bestellung 112000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.41 EUR
6000+0.38 EUR
10000+0.36 EUR
Mindestbestellmenge: 2000
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DMT47M2SFVW-7 DMT47M2SFVW.pdf
DMT47M2SFVW-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
auf Bestellung 112000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
20+0.92 EUR
100+0.64 EUR
500+0.53 EUR
1000+0.45 EUR
Mindestbestellmenge: 17
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DMT47M2LDVQ-7 DMT47M2LDVQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.76 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
DMT47M2LDVQ-7 DMT47M2LDVQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.83 EUR
12+1.5 EUR
100+1.17 EUR
500+0.99 EUR
1000+0.81 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
DMT47M2SFVWQ-7 DMT47M2SFVWQ.pdf
DMT47M2SFVWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT47M2SFVWQ-7 DMT47M2SFVWQ.pdf
DMT47M2SFVWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT47M2SFVWQ-13 DMT47M2SFVWQ.pdf
DMT47M2SFVWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT47M2LDV-13 DMT47M2LDV.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Produkt ist nicht verfügbar
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DMT47M2LDV-7 DMT47M2LDV.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.61 EUR
Mindestbestellmenge: 2000
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3.0SMCJ18CA-13 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf
3.0SMCJ18CA-13
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 102.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SBR20A300CTB-13 SBR20A300.pdf
SBR20A300CTB-13
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 300V 10A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
auf Bestellung 6400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.42 EUR
1600+1.32 EUR
2400+1.26 EUR
Mindestbestellmenge: 800
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SBR20A300CTB-13 SBR20A300.pdf
SBR20A300CTB-13
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 300V 10A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
auf Bestellung 6529 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.78 EUR
10+2.53 EUR
100+1.87 EUR
Mindestbestellmenge: 5
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DDZ23-7 DDZ5V1B-DDZ43.pdf
DDZ23-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 23V 470MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 23 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: SOD-123
Power - Max: 470 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 19 V
auf Bestellung 129000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.065 EUR
6000+0.06 EUR
9000+0.05 EUR
30000+0.049 EUR
75000+0.044 EUR
Mindestbestellmenge: 3000
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DDZ23-7 DDZ5V1B-DDZ43.pdf
DDZ23-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 23V 470MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 23 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: SOD-123
Power - Max: 470 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 19 V
auf Bestellung 131910 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
67+0.26 EUR
137+0.13 EUR
500+0.11 EUR
1000+0.075 EUR
Mindestbestellmenge: 46
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DZ23C20-7-F DZ23C2V7-DZ23C51.pdf
DZ23C20-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER ARRAY 20V SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.1 EUR
6000+0.093 EUR
9000+0.087 EUR
15000+0.082 EUR
21000+0.078 EUR
Mindestbestellmenge: 3000
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DZ23C20-7-F DZ23C2V7-DZ23C51.pdf
DZ23C20-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER ARRAY 20V SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
auf Bestellung 23998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
40+0.44 EUR
100+0.22 EUR
500+0.18 EUR
1000+0.13 EUR
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RS2G-13-F ds15004.pdf
RS2G-13-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 400V 1.5A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 126000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.24 EUR
6000+0.23 EUR
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RS2G-13-F ds15004.pdf
RS2G-13-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 400V 1.5A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 127827 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
38+0.48 EUR
100+0.45 EUR
500+0.39 EUR
1000+0.35 EUR
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DMP58D1LV-13 DMP58D1LV.pdf
DMP58D1LV-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 80000 Stücke:
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Anzahl Preis
10000+0.1 EUR
50000+0.084 EUR
Mindestbestellmenge: 10000
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DMP58D1LV-13 DMP58D1LV.pdf
DMP58D1LV-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
37+0.49 EUR
100+0.25 EUR
500+0.2 EUR
1000+0.15 EUR
2000+0.13 EUR
5000+0.12 EUR
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DMP58D1LV-7 DMP58D1LV.pdf
DMP58D1LV-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
6000+0.12 EUR
9000+0.1 EUR
75000+0.084 EUR
Mindestbestellmenge: 3000
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DMP58D1LV-7 DMP58D1LV.pdf
DMP58D1LV-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
37+0.49 EUR
100+0.25 EUR
500+0.2 EUR
1000+0.15 EUR
Mindestbestellmenge: 25
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DMP58D1LVQ-13 DMP58D1LVQ.pdf
DMP58D1LVQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMP58D1LVQ-7 DMP58D1LVQ.pdf
DMP58D1LVQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
6000+0.12 EUR
9000+0.1 EUR
75000+0.084 EUR
Mindestbestellmenge: 3000
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SMAJ110A-13-F SMAJ5.0CA-SMAJ200CA.pdf
SMAJ110A-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 110VWM 177VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMAJ110A-13 SMAJ5.0%20170%20C%20A.pdf
SMAJ110A-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 110VWM 177VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 400W
Power Line Protection: Yes
Produkt ist nicht verfügbar
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SMAJ110A-13 SMAJ5.0%20170%20C%20A.pdf
SMAJ110A-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 110VWM 177VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 400W
Power Line Protection: Yes
Produkt ist nicht verfügbar
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DMN3012LFG-13 DMN3012LFG.pdf
DMN3012LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 20A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type D)
Produkt ist nicht verfügbar
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DMN3012LFG-7 DMN3012LFG.pdf
DMN3012LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 20A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type D)
Produkt ist nicht verfügbar
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DMG6968UTS-13 ds31793.pdf
DMG6968UTS-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.2A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 8-TSSOP
Produkt ist nicht verfügbar
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DMG6968UTS-13 ds31793.pdf
DMG6968UTS-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.2A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 8-TSSOP
auf Bestellung 2279 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
25+0.72 EUR
100+0.47 EUR
500+0.37 EUR
1000+0.34 EUR
Mindestbestellmenge: 16
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DDZ5V6BQ-7 DDZ5V1B-DDZ43.pdf
DDZ5V6BQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.6V 310MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 2.5 V
Qualification: AEC-Q101
auf Bestellung 1287000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.056 EUR
6000+0.052 EUR
9000+0.045 EUR
Mindestbestellmenge: 3000
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DDZ5V6BQ-7 DDZ5V1B-DDZ43.pdf
DDZ5V6BQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.6V 310MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 2.5 V
Qualification: AEC-Q101
auf Bestellung 1289840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
56+0.32 EUR
115+0.15 EUR
500+0.13 EUR
1000+0.089 EUR
Mindestbestellmenge: 39
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B250BE-13 B250%28A%2CB%29E%2C%20B260%28A%2CB%29E.pdf
B250BE-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Produkt ist nicht verfügbar
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PI3EQX1014ZTFEX PI3EQX1014-Product-Brief.pdf
Hersteller: Diodes Incorporated
Description: USB3 EQX U-QFN2545-34 T&R 3.5K
Packaging: Tape & Reel (TR)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 3.3V
Applications: USB 3.2
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UTQFN (2.5x4.5)
Signal Conditioning: Input Equalization
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+1.82 EUR
Mindestbestellmenge: 3500
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PI3EQX1014ZTFEX PI3EQX1014-Product-Brief.pdf
Hersteller: Diodes Incorporated
Description: USB3 EQX U-QFN2545-34 T&R 3.5K
Packaging: Cut Tape (CT)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 3.3V
Applications: USB 3.2
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UTQFN (2.5x4.5)
Signal Conditioning: Input Equalization
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.96 EUR
10+3.57 EUR
25+3.37 EUR
100+2.87 EUR
250+2.69 EUR
500+2.36 EUR
1000+1.95 EUR
Mindestbestellmenge: 5
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PI3EQX2024ZTFEX PI3EQX2024.pdf
Hersteller: Diodes Incorporated
Description: USB3 EQX U-QFN2545-34 T&R 3.5K
Packaging: Tape & Reel (TR)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: USB
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UTQFN (2.5x4.5)
Signal Conditioning: Input Equalization
Produkt ist nicht verfügbar
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PI3EQX2024ZTFEX PI3EQX2024.pdf
Hersteller: Diodes Incorporated
Description: USB3 EQX U-QFN2545-34 T&R 3.5K
Packaging: Cut Tape (CT)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: USB
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UTQFN (2.5x4.5)
Signal Conditioning: Input Equalization
auf Bestellung 3487 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.89 EUR
10+4.41 EUR
25+4.16 EUR
100+3.61 EUR
250+3.42 EUR
500+3.07 EUR
1000+2.59 EUR
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