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BAT54CDW-7-F-2477 BAT54CDW-7-F-2477 Diodes Incorporated Description: DIODE ARR SCHOT 30V 200MA SOT363
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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FS1ME_HF-07 FS1ME_HF-07 Diodes Incorporated Description: DIODE STANDARD 1000V 1A DO219AA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.6 µs
Technology: Standard
Capacitance @ Vr, F: 7.6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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12500+0.061 EUR
17500+0.058 EUR
25000+0.056 EUR
62500+0.05 EUR
125000+0.045 EUR
250000+0.043 EUR
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RDBF254-13 Diodes Incorporated Description: BRIDGE RECT 1PHASE 400V 2.5A DBF
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBF
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2.5 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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RDBF254-13 Diodes Incorporated Description: BRIDGE RECT 1PHASE 400V 2.5A DBF
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBF
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2.5 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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BZT52HC2V4WF-7 BZT52HC2V4WF-7 Diodes Incorporated BZT52HC2V4WF%20-%20BZT52HC47WF.pdf Description: DIODE ZENER 2.4V 375MW SOD123F
Tolerance: ±8.33%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
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BZT52HC2V4WF-7 BZT52HC2V4WF-7 Diodes Incorporated BZT52HC2V4WF%20-%20BZT52HC47WF.pdf Description: DIODE ZENER 2.4V 375MW SOD123F
Tolerance: ±8.33%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
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BZT52HC2V7WF-7 BZT52HC2V7WF-7 Diodes Incorporated BZT52HC2V4WF%20-%20BZT52HC47WF.pdf Description: DIODE ZENER 2.7V 375MW SOD123F
Tolerance: ±7.41%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 83 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
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BZT52HC2V7WF-7 BZT52HC2V7WF-7 Diodes Incorporated BZT52HC2V4WF%20-%20BZT52HC47WF.pdf Description: DIODE ZENER 2.7V 375MW SOD123F
Tolerance: ±7.41%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 83 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
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BZT52HC33WF-7 BZT52HC33WF-7 Diodes Incorporated BZT52HC2V4WF%20-%20BZT52HC47WF.pdf Description: DIODE ZENER 33V 375MW SOD123F
Tolerance: ±6.06%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52HC33WF-7 BZT52HC33WF-7 Diodes Incorporated BZT52HC2V4WF%20-%20BZT52HC47WF.pdf Description: DIODE ZENER 33V 375MW SOD123F
Tolerance: ±6.06%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Qualification: AEC-Q101
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BZT52HC39WF-7 BZT52HC39WF-7 Diodes Incorporated BZT52HC2V4WF%20-%20BZT52HC47WF.pdf Description: DIODE ZENER 39V 375MW SOD123F
Tolerance: ±5.13%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Qualification: AEC-Q101
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BZT52HC39WF-7 BZT52HC39WF-7 Diodes Incorporated BZT52HC2V4WF%20-%20BZT52HC47WF.pdf Description: DIODE ZENER 39V 375MW SOD123F
Tolerance: ±5.13%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Qualification: AEC-Q101
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SMBJ5.0CAQ-13-F SMBJ5.0CAQ-13-F Diodes Incorporated ds40740.pdf Description: TVS DIODE 5VWM 9.2VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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AP63201QWU-EVM AP63201QWU-EVM Diodes Incorporated AP63201QWU-EVM-User-Guide.pdf Description: EVAL BOARD FOR AP63201Q
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.8V ~ 32V
Current - Output: 2A
Contents: Board(s)
Frequency - Switching: 500kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP63201Q
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
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AP63200QWU-EVM Diodes Incorporated AP63200QWU-EVM-User-Guide.pdf Description: EVAL BOARD FOR AP63200Q
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.8V ~ 32V
Current - Output: 2A
Contents: Board(s)
Frequency - Switching: 500kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP63200Q
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
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AP63203QWU-EVM AP63203QWU-EVM Diodes Incorporated AP63203QWU-EVM-User-Guide.pdf Description: EVAL BOARD FOR AP63203Q
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3.8V ~ 32V
Current - Output: 2A
Contents: Board(s)
Frequency - Switching: 1.1MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP63203Q
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
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DMTH46M7SFVW-7 DMTH46M7SFVW-7 Diodes Incorporated DMTH46M7SFVW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Produkt ist nicht verfügbar
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DMTH46M7SFVW-7 DMTH46M7SFVW-7 Diodes Incorporated DMTH46M7SFVW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
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DMTH4008LPSQ-13 DMTH4008LPSQ-13 Diodes Incorporated DMTH4008LPSQ.pdf Description: MOSFET N-CH 40V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
Qualification: AEC-Q101
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DMTH4008LPSQ-13 DMTH4008LPSQ-13 Diodes Incorporated DMTH4008LPSQ.pdf Description: MOSFET N-CH 40V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
Qualification: AEC-Q101
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DMTH4008LPDWQ-13 DMTH4008LPDWQ-13 Diodes Incorporated DMTH4008LPDWQ.pdf Description: MOSFET 2N-CH 40V 10A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.67W (Ta), 39.4W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 20V
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
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DMTH4008LPDWQ-13 DMTH4008LPDWQ-13 Diodes Incorporated DMTH4008LPDWQ.pdf Description: MOSFET 2N-CH 40V 10A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.67W (Ta), 39.4W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 20V
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
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10+2.14 EUR
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100+0.88 EUR
500+0.69 EUR
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SB550-T SB550-T Diodes Incorporated ds23024.pdf Description: DIODE SCHOTTKY 50V 5A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
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2400+0.55 EUR
3600+0.52 EUR
6000+0.5 EUR
8400+0.48 EUR
12000+0.46 EUR
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SB550-T SB550-T Diodes Incorporated ds23024.pdf Description: DIODE SCHOTTKY 50V 5A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
auf Bestellung 13666 Stücke:
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10+2.15 EUR
16+1.34 EUR
100+0.88 EUR
500+0.68 EUR
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DMC2710UVQ-7 DMC2710UVQ-7 Diodes Incorporated DMC2710UVQ.pdf Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
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DMC2710UVQ-7 DMC2710UVQ-7 Diodes Incorporated DMC2710UVQ.pdf Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
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DMC2710UDW-13 DMC2710UDW-13 Diodes Incorporated DMC2710UDW.pdf Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
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DMC2710UDWQ-13 DMC2710UDWQ-13 Diodes Incorporated DMC2710UDWQ.pdf Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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DMC2710UVQ-13 DMC2710UVQ-13 Diodes Incorporated DMC2710UVQ.pdf Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
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DMC2710UV-13 DMC2710UV-13 Diodes Incorporated DMC2710UV.pdf Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
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DMC2710UVT-13 DMC2710UVT-13 Diodes Incorporated DMC2710UVT.pdf Description: MOSFET N/P-CH 20V 1.2A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 900mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-23-6
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BAT64W-7-F BAT64W-7-F Diodes Incorporated BAT64W-AW-CW-SW.pdf Description: DIODE SCHOTTKY 40V 250MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
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BAT64W-7-F BAT64W-7-F Diodes Incorporated BAT64W-AW-CW-SW.pdf Description: DIODE SCHOTTKY 40V 250MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
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BAT64-7-F BAT64-7-F Diodes Incorporated BAT64-A-C-S.pdf Description: DIODE SCHOTTKY 40V 250MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
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BAT64-7-F BAT64-7-F Diodes Incorporated BAT64-A-C-S.pdf Description: DIODE SCHOTTKY 40V 250MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
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BAT64Q-13-F BAT64Q-13-F Diodes Incorporated DS45354.pdf Description: DIODE SCHOTTKY 40V 250MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
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BAT64SQ-13-F BAT64SQ-13-F Diodes Incorporated DS45354.pdf Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
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BAT64AQ-13-F BAT64AQ-13-F Diodes Incorporated DS45354.pdf Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
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BAT64Q-7-F BAT64Q-7-F Diodes Incorporated DS45354.pdf Description: DIODE SCHOTTKY 40V 250MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
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BAT64SQ-7-F BAT64SQ-7-F Diodes Incorporated DS45354.pdf Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
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BAT64AQ-7-F BAT64AQ-7-F Diodes Incorporated DS45354.pdf Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
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DMNH6065SPDWQ-13 Diodes Incorporated DMNH6065SPDWQ.pdf Description: MOSFET 2N-CH 60V 27A POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 68W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 466pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type R)
Grade: Automotive
Qualification: AEC-Q101
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DMNH6065SPDW-13 Diodes Incorporated DMNH6065SPDW.pdf Description: MOSFET 2N-CH 60V 27A POWERDI50
Supplier Device Package: PowerDI5060-8 (Type R)
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 466pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.4W (Ta), 68W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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DMNH6065SSD-13 DMNH6065SSD-13 Diodes Incorporated DMNH6065SSD.pdf Description: MOSFET 2N-CH 60V 3.8A 8SO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.5W (Ta)
Produkt ist nicht verfügbar
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DMNH6065SSDQ-13 DMNH6065SSDQ-13 Diodes Incorporated DMNH6065SSDQ.pdf Description: MOSFET 2N-CH 60V 3.8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Produkt ist nicht verfügbar
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DMTH6016LPD-13 DMTH6016LPD-13 Diodes Incorporated DMTH6016LPD.pdf Description: MOSFET 2N-CH 60V 9.2A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 37.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
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DMTH6016LPDQ-13 DMTH6016LPDQ-13 Diodes Incorporated DMTH6016LPDQ.pdf Description: MOSFET 2N-CH 60V 9.2A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 37.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
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DMTH6016LPDQ-13 DMTH6016LPDQ-13 Diodes Incorporated DMTH6016LPDQ.pdf Description: MOSFET 2N-CH 60V 9.2A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 37.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
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DMTH6016LPDWQ-13 Diodes Incorporated DMTH6016LPDWQ.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 37.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Grade: Automotive
Qualification: AEC-Q101
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DMNH6035SPDW-13 DMNH6035SPDW-13 Diodes Incorporated DMNH6035SPDW.pdf Description: MOSFET 2N-CH 60V 33A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 68W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type R)
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DMNH6035SPDW-13 DMNH6035SPDW-13 Diodes Incorporated DMNH6035SPDW.pdf Description: MOSFET 2N-CH 60V 33A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 68W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type R)
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DMNH6035SPDWQ-13 DMNH6035SPDWQ-13 Diodes Incorporated DMNH6035SPDWQ.pdf Description: MOSFET 2N-CH 60V 33A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 68W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type R)
Grade: Automotive
Qualification: AEC-Q101
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BZX84C3V0TA BZX84C3V0TA Diodes Incorporated ds18001.pdf Description: DIODE ZENER 3V 350MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
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DMN2004VK-7B DMN2004VK-7B Diodes Incorporated ds30865.pdf Description: MOSFET 2N-CH 20V 0.54A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
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DMT35M4LFDF-7 DMT35M4LFDF-7 Diodes Incorporated DMT35M4LFDF.pdf Description: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 15 V
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DMT35M4LFDF-7 DMT35M4LFDF-7 Diodes Incorporated DMT35M4LFDF.pdf Description: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 15 V
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DMT12H065LFDF-7 DMT12H065LFDF-7 Diodes Incorporated DMT12H065LFDF.pdf Description: MOSFET N-CH 115V 4.3A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 115 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 252 pF @ 50 V
auf Bestellung 249449 Stücke:
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DMN10H220LFDF-7 DMN10H220LFDF-7 Diodes Incorporated DMN10H220LFDF.pdf Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 225mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 384 pF @ 25 V
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DMN10H220LFDF-7 DMN10H220LFDF-7 Diodes Incorporated DMN10H220LFDF.pdf Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 225mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 384 pF @ 25 V
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DMN3025LFDF-7 DMN3025LFDF-7 Diodes Incorporated DMN3025LFDF.pdf Description: MOSFET N-CH 30V 9.9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 7A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V
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BAT54CDW-7-F-2477
BAT54CDW-7-F-2477
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 30V 200MA SOT363
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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FS1ME_HF-07
FS1ME_HF-07
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 1000V 1A DO219AA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.6 µs
Technology: Standard
Capacitance @ Vr, F: 7.6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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RDBF254-13
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 400V 2.5A DBF
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBF
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2.5 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RDBF254-13
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 400V 2.5A DBF
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBF
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2.5 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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BZT52HC2V4WF-7 BZT52HC2V4WF%20-%20BZT52HC47WF.pdf
BZT52HC2V4WF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 2.4V 375MW SOD123F
Tolerance: ±8.33%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 342000 Stücke:
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BZT52HC2V4WF-7 BZT52HC2V4WF%20-%20BZT52HC47WF.pdf
BZT52HC2V4WF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 2.4V 375MW SOD123F
Tolerance: ±8.33%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
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BZT52HC2V7WF-7 BZT52HC2V4WF%20-%20BZT52HC47WF.pdf
BZT52HC2V7WF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 2.7V 375MW SOD123F
Tolerance: ±7.41%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 83 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
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BZT52HC2V7WF-7 BZT52HC2V4WF%20-%20BZT52HC47WF.pdf
BZT52HC2V7WF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 2.7V 375MW SOD123F
Tolerance: ±7.41%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 83 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 357490 Stücke:
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33+0.65 EUR
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BZT52HC33WF-7 BZT52HC2V4WF%20-%20BZT52HC47WF.pdf
BZT52HC33WF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 33V 375MW SOD123F
Tolerance: ±6.06%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52HC33WF-7 BZT52HC2V4WF%20-%20BZT52HC47WF.pdf
BZT52HC33WF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 33V 375MW SOD123F
Tolerance: ±6.06%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
54+0.39 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
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BZT52HC39WF-7 BZT52HC2V4WF%20-%20BZT52HC47WF.pdf
BZT52HC39WF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 39V 375MW SOD123F
Tolerance: ±5.13%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Qualification: AEC-Q101
auf Bestellung 39000 Stücke:
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AnzahlPrivatkunde
3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
15000+0.11 EUR
21000+0.1 EUR
30000+0.098 EUR
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BZT52HC39WF-7 BZT52HC2V4WF%20-%20BZT52HC47WF.pdf
BZT52HC39WF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 39V 375MW SOD123F
Tolerance: ±5.13%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Qualification: AEC-Q101
auf Bestellung 39029 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
54+0.39 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
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SMBJ5.0CAQ-13-F ds40740.pdf
SMBJ5.0CAQ-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 5VWM 9.2VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1773 Stücke:
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16+1.32 EUR
27+0.81 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.36 EUR
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AP63201QWU-EVM AP63201QWU-EVM-User-Guide.pdf
AP63201QWU-EVM
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AP63201Q
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.8V ~ 32V
Current - Output: 2A
Contents: Board(s)
Frequency - Switching: 500kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP63201Q
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
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AP63200QWU-EVM AP63200QWU-EVM-User-Guide.pdf
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AP63200Q
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.8V ~ 32V
Current - Output: 2A
Contents: Board(s)
Frequency - Switching: 500kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP63200Q
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
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AP63203QWU-EVM AP63203QWU-EVM-User-Guide.pdf
AP63203QWU-EVM
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AP63203Q
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3.8V ~ 32V
Current - Output: 2A
Contents: Board(s)
Frequency - Switching: 1.1MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP63203Q
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
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DMTH46M7SFVW-7 DMTH46M7SFVW.pdf
DMTH46M7SFVW-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Produkt ist nicht verfügbar
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DMTH46M7SFVW-7 DMTH46M7SFVW.pdf
DMTH46M7SFVW-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
auf Bestellung 304 Stücke:
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AnzahlPrivatkunde
10+2.12 EUR
16+1.32 EUR
100+0.87 EUR
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DMTH4008LPSQ-13 DMTH4008LPSQ.pdf
DMTH4008LPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.57 EUR
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DMTH4008LPSQ-13 DMTH4008LPSQ.pdf
DMTH4008LPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 4815 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.99 EUR
15+1.4 EUR
100+0.94 EUR
500+0.74 EUR
1000+0.67 EUR
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DMTH4008LPDWQ-13 DMTH4008LPDWQ.pdf
DMTH4008LPDWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 10A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.67W (Ta), 39.4W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 20V
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.54 EUR
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DMTH4008LPDWQ-13 DMTH4008LPDWQ.pdf
DMTH4008LPDWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 10A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.67W (Ta), 39.4W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 20V
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4814 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.14 EUR
16+1.34 EUR
100+0.88 EUR
500+0.69 EUR
1000+0.62 EUR
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SB550-T ds23024.pdf
SB550-T
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 5A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 13200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1200+0.61 EUR
2400+0.55 EUR
3600+0.52 EUR
6000+0.5 EUR
8400+0.48 EUR
12000+0.46 EUR
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SB550-T ds23024.pdf
SB550-T
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 5A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
auf Bestellung 13666 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.15 EUR
16+1.34 EUR
100+0.88 EUR
500+0.68 EUR
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DMC2710UVQ-7 DMC2710UVQ.pdf
DMC2710UVQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMC2710UVQ-7 DMC2710UVQ.pdf
DMC2710UVQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 535 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
47+0.45 EUR
100+0.29 EUR
500+0.21 EUR
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DMC2710UDW-13 DMC2710UDW.pdf
DMC2710UDW-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 150000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.12 EUR
20000+0.11 EUR
30000+0.1 EUR
50000+0.096 EUR
70000+0.093 EUR
100000+0.089 EUR
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DMC2710UDWQ-13 DMC2710UDWQ.pdf
DMC2710UDWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 160000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.12 EUR
20000+0.11 EUR
30000+0.1 EUR
50000+0.096 EUR
70000+0.093 EUR
100000+0.089 EUR
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DMC2710UVQ-13 DMC2710UVQ.pdf
DMC2710UVQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMC2710UV-13 DMC2710UV.pdf
DMC2710UV-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.17 EUR
20000+0.15 EUR
30000+0.14 EUR
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DMC2710UVT-13 DMC2710UVT.pdf
DMC2710UVT-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 1.2A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 900mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-23-6
Produkt ist nicht verfügbar
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BAT64W-7-F BAT64W-AW-CW-SW.pdf
BAT64W-7-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 250MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 144000 Stücke:
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3000+0.067 EUR
6000+0.055 EUR
9000+0.048 EUR
15000+0.045 EUR
30000+0.042 EUR
75000+0.039 EUR
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BAT64W-7-F BAT64W-AW-CW-SW.pdf
BAT64W-7-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 250MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
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AnzahlPrivatkunde
91+0.23 EUR
134+0.15 EUR
202+0.1 EUR
500+0.084 EUR
1000+0.08 EUR
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BAT64-7-F BAT64-A-C-S.pdf
BAT64-7-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 250MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
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AnzahlPrivatkunde
3000+0.067 EUR
6000+0.065 EUR
9000+0.061 EUR
15000+0.058 EUR
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BAT64-7-F BAT64-A-C-S.pdf
BAT64-7-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 250MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 26952 Stücke:
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AnzahlPrivatkunde
67+0.31 EUR
94+0.23 EUR
149+0.14 EUR
500+0.12 EUR
1000+0.11 EUR
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BAT64Q-13-F DS45354.pdf
BAT64Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 250MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 540000 Stücke:
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AnzahlPrivatkunde
10000+0.13 EUR
20000+0.12 EUR
30000+0.12 EUR
50000+0.11 EUR
70000+0.11 EUR
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BAT64SQ-13-F DS45354.pdf
BAT64SQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAT64AQ-13-F DS45354.pdf
BAT64AQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
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AnzahlPrivatkunde
10000+0.14 EUR
20000+0.13 EUR
30000+0.12 EUR
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BAT64Q-7-F DS45354.pdf
BAT64Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 250MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAT64SQ-7-F DS45354.pdf
BAT64SQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAT64AQ-7-F DS45354.pdf
BAT64AQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMNH6065SPDWQ-13 DMNH6065SPDWQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 27A POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 68W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 466pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type R)
Grade: Automotive
Qualification: AEC-Q101
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2500+0.82 EUR
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DMNH6065SPDW-13 DMNH6065SPDW.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 27A POWERDI50
Supplier Device Package: PowerDI5060-8 (Type R)
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 466pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.4W (Ta), 68W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMNH6065SSD-13 DMNH6065SSD.pdf
DMNH6065SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.8A 8SO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.5W (Ta)
Produkt ist nicht verfügbar
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DMNH6065SSDQ-13 DMNH6065SSDQ.pdf
DMNH6065SSDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Produkt ist nicht verfügbar
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DMTH6016LPD-13 DMTH6016LPD.pdf
DMTH6016LPD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 9.2A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 37.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 102500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.9 EUR
7500+0.81 EUR
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DMTH6016LPDQ-13 DMTH6016LPDQ.pdf
DMTH6016LPDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 9.2A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 37.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH6016LPDQ-13 DMTH6016LPDQ.pdf
DMTH6016LPDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 9.2A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 37.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 707 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.31 EUR
15+1.45 EUR
100+0.96 EUR
500+0.75 EUR
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DMTH6016LPDWQ-13 DMTH6016LPDWQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 37.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMNH6035SPDW-13 DMNH6035SPDW.pdf
DMNH6035SPDW-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 33A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 68W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type R)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.02 EUR
5000+0.96 EUR
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DMNH6035SPDW-13 DMNH6035SPDW.pdf
DMNH6035SPDW-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 33A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 68W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type R)
auf Bestellung 7335 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.64 EUR
10+2.32 EUR
100+1.57 EUR
500+1.24 EUR
1000+1.13 EUR
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DMNH6035SPDWQ-13 DMNH6035SPDWQ.pdf
DMNH6035SPDWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 33A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 68W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type R)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C3V0TA ds18001.pdf
BZX84C3V0TA
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3V 350MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
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DMN2004VK-7B ds30865.pdf
DMN2004VK-7B
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.54A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 125912 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
54+0.39 EUR
100+0.25 EUR
500+0.18 EUR
1000+0.17 EUR
2000+0.14 EUR
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DMT35M4LFDF-7 DMT35M4LFDF.pdf
DMT35M4LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 15 V
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
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DMT35M4LFDF-7 DMT35M4LFDF.pdf
DMT35M4LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 15 V
auf Bestellung 67024 Stücke:
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DMT12H065LFDF-7 DMT12H065LFDF.pdf
DMT12H065LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 115V 4.3A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 115 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 252 pF @ 50 V
auf Bestellung 249449 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.48 EUR
14+1.56 EUR
100+1.04 EUR
500+0.81 EUR
1000+0.74 EUR
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DMN10H220LFDF-7 DMN10H220LFDF.pdf
DMN10H220LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 225mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 384 pF @ 25 V
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.21 EUR
6000+0.19 EUR
9000+0.18 EUR
15000+0.17 EUR
30000+0.15 EUR
Mindestbestellmenge: 3000 Stücke
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DMN10H220LFDF-7 DMN10H220LFDF.pdf
DMN10H220LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 225mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 384 pF @ 25 V
auf Bestellung 44310 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
36+0.58 EUR
100+0.37 EUR
500+0.29 EUR
1000+0.25 EUR
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DMN3025LFDF-7 DMN3025LFDF.pdf
DMN3025LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 9.9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 7A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V
auf Bestellung 177000 Stücke:
Lieferzeit 10-14 Tag (e)
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