Produkte > DIODES INCORPORATED > DSS3515M-7B
DSS3515M-7B

DSS3515M-7B Diodes Incorporated

DSS3515M.pdf
Hersteller: Diodes Incorporated
Description: TRANS PNP 15V 0.5A X1-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 340MHz
Supplier Device Package: X1-DFN1006-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
auf Bestellung 810000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10000+0.14 EUR
20000+0.13 EUR
30000+0.12 EUR
70000+0.11 EUR
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DSS3515M-7B Diodes Incorporated

Description: TRANS PNP 15V 0.5A X1-DFN1006-3, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V, Frequency - Transition: 340MHz, Supplier Device Package: X1-DFN1006-3, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 15 V, Power - Max: 250 mW.

Weitere Produktangebote DSS3515M-7B nach Preis ab 0.15 EUR bis 0.97 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
DSS3515M-7B DSS3515M-7B Diodes Incorporated DSS3515M.pdf Description: TRANS PNP 15V 0.5A X1-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 340MHz
Supplier Device Package: X1-DFN1006-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
auf Bestellung 812940 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
38+0.47 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.2 EUR
2000+0.18 EUR
5000+0.15 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DSS3515M-7B DSS3515M-7B Diodes Incorporated DSS3515M.pdf Bipolar Transistors - BJT SS Low Sat Transisto X1-DFN1006-3,10K
auf Bestellung 8260 Stücke:
Lieferzeit 10-14 Tag (e)
3+0.97 EUR
10+0.64 EUR
100+0.4 EUR
500+0.27 EUR
1000+0.2 EUR
2500+0.19 EUR
5000+0.17 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DSS3515M-7B DSS3515M.pdf
DSS3515M-7B
Hersteller: Diodes Incorporated
Description: TRANS PNP 15V 0.5A X1-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 340MHz
Supplier Device Package: X1-DFN1006-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
auf Bestellung 812940 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
24+0.76 EUR
38+0.47 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.2 EUR
2000+0.18 EUR
5000+0.15 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DSS3515M-7B DSS3515M.pdf
DSS3515M-7B
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT SS Low Sat Transisto X1-DFN1006-3,10K
auf Bestellung 8260 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+0.97 EUR
10+0.64 EUR
100+0.4 EUR
500+0.27 EUR
1000+0.2 EUR
2500+0.19 EUR
5000+0.17 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH