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2DB1386R-13 2DB1386R-13 Diodes Incorporated ds31147.pdf Description: TRANS PNP 20V 5A SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Qualification: AEC-Q101
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DMN10H6D2LFDB-13 DMN10H6D2LFDB-13 Diodes Incorporated DMN10H6D2LFDB.pdf Description: MOSFET 2N-CH 100V 0.27A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 50V
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: U-DFN2020-6 (Type B)
Produkt ist nicht verfügbar
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DMP2090UFDB-13 DMP2090UFDB-13 Diodes Incorporated DMP2090UFDB.pdf Description: MOSFET 2P-CH 20V 3.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 790mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
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DMN2053UFDB-13 DMN2053UFDB-13 Diodes Incorporated DMN2053UFDB.pdf Description: MOSFET 2N-CH 20V 4.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Produkt ist nicht verfügbar
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DMC67D8UFDB-13 Diodes Incorporated Description: MOSFET 41V-60V U-DFN2020-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZX84B3V3Q-7-F BZX84B3V3Q-7-F Diodes Incorporated BZX84Bxxx.pdf Description: DIODE ZENER 3.3V 300MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
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2N7002DWK-7 2N7002DWK-7 Diodes Incorporated 2N7002DWK.pdf Description: MOSFET 2N-CH 60V 0.261A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 330mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 261mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
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2N7002DWS-7 2N7002DWS-7 Diodes Incorporated 2N7002DWS.pdf Description: MOSFET 2N-CH 60V 0.247A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 247mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
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2N7002DWS-7 2N7002DWS-7 Diodes Incorporated 2N7002DWS.pdf Description: MOSFET 2N-CH 60V 0.247A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 247mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
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FK2000050 FK2000050 Diodes Incorporated FK-1-8V.pdf Description: CLOCK SAW OSCILLATOR SEAM3225 T&
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Type: XO (Standard)
Height - Seated (Max): 0.045" (1.15mm)
Base Resonator: Crystal
Supplier Device Package: 4-VDFN (3.2x2.5)
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FK2000050 FK2000050 Diodes Incorporated FK-1-8V.pdf Description: CLOCK SAW OSCILLATOR SEAM3225 T&
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Type: XO (Standard)
Height - Seated (Max): 0.045" (1.15mm)
Base Resonator: Crystal
Supplier Device Package: 4-VDFN (3.2x2.5)
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PAM2325AGPADJ PAM2325AGPADJ Diodes Incorporated PAM2325.pdf Description: IC REG BUCK ADJ 3.5A 12QFN
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-QFN (2x2)
Synchronous Rectifier: Yes
Voltage - Output (Max): 4V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1V
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PAM2325AGPADJ PAM2325AGPADJ Diodes Incorporated PAM2325.pdf Description: IC REG BUCK ADJ 3.5A 12QFN
Packaging: Cut Tape (CT)
Package / Case: 12-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-QFN (2x2)
Synchronous Rectifier: Yes
Voltage - Output (Max): 4V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1V
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MBR3035PT MBR3035PT Diodes Incorporated ds23017.pdf Description: DIODE ARRAY SCHOTT 35V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Produkt ist nicht verfügbar
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FW384WFIN1 FW384WFIN1 Diodes Incorporated FW.pdf Description: CRYSTAL 38.4000MHZ 7PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 90°C
Frequency Stability: ±12ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.022" (0.55mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 38.4 MHz
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FW384WFIN1 FW384WFIN1 Diodes Incorporated FW.pdf Description: CRYSTAL 38.4000MHZ 7PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 90°C
Frequency Stability: ±12ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.022" (0.55mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 38.4 MHz
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DMTH4M95SPSQ-13-01 Diodes Incorporated Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
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DMN3009LFV-7 DMN3009LFV-7 Diodes Incorporated DMN3009LFV.pdf Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
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DMN3009LFV-7 DMN3009LFV-7 Diodes Incorporated DMN3009LFV.pdf Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
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SB190-T SB190-T Diodes Incorporated ds30116.pdf Description: DIODE SCHOTTKY 90V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Produkt ist nicht verfügbar
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SB190-T SB190-T Diodes Incorporated ds30116.pdf Description: DIODE SCHOTTKY 90V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Produkt ist nicht verfügbar
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MMBD3004S-13-F MMBD3004S-13-F Diodes Incorporated Description: DIODE ARRAY GP 300V 225MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
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MMBD3004S-13-F MMBD3004S-13-F Diodes Incorporated Description: DIODE ARRAY GP 300V 225MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
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ES2GA_HF ES2GA_HF Diodes Incorporated ES2DA-ES2JA_LS.pdf Description: DIODE STANDARD 400V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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TT10M_HF TT10M_HF Diodes Incorporated TT10M_LS.pdf Description: MEDIUM/HIGH POWER BRIDGE TTL T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TTL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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TT10M_HF TT10M_HF Diodes Incorporated TT10M_LS.pdf Description: MEDIUM/HIGH POWER BRIDGE TTL T&R
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TTL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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TT10M-13 TT10M-13 Diodes Incorporated TT10M.pdf Description: MEDIUM/HIGH POWER BRIDGE TTL T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TTL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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TT10M-13 TT10M-13 Diodes Incorporated TT10M.pdf Description: MEDIUM/HIGH POWER BRIDGE TTL T&R
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TTL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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SMBJ7.5AQ-13-F SMBJ7.5AQ-13-F Diodes Incorporated ds40740.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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74HC05S14-13 74HC05S14-13 Diodes Incorporated 74HC05.pdf Description: IC INVERTER 6CH 1-INP 14SO
Packaging: Tape & Reel (TR)
Features: Open Drain
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: -, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SO
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 20 µA
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74HC05S14-13 74HC05S14-13 Diodes Incorporated 74HC05.pdf Description: IC INVERTER 6CH 1-INP 14SO
Packaging: Cut Tape (CT)
Features: Open Drain
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: -, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SO
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 20 µA
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B350BQ-13-F B350BQ-13-F Diodes Incorporated B340BQ-B360BQ.pdf Description: DIODE SCHOTTKY 50V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
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SB350-B SB350-B Diodes Incorporated SB320-360.pdf Description: DIODE SCHOTTKY 50V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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B350BE-13 B350BE-13 Diodes Incorporated B350%28B%2CC%29E%2C%20B360%28B%2CC%29E.pdf Description: DIODE SCHOTTKY 50V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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B350B-13-F-2477 B350B-13-F-2477 Diodes Incorporated Description: DIODE
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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B350AQ-13-F B350AQ-13-F Diodes Incorporated B320AQ-B360AQ.pdf Description: DIODE SCHOTTKY 50V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
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B350AQ-13-F B350AQ-13-F Diodes Incorporated B320AQ-B360AQ.pdf Description: DIODE SCHOTTKY 50V 3A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
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DMPH4023SK3-13 DMPH4023SK3-13 Diodes Incorporated DMPH4023SK3.pdf Description: MOSFET P-CH 40V 50A TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 20 V
Qualification: AEC-Q101
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DMPH4023SK3-13 DMPH4023SK3-13 Diodes Incorporated DMPH4023SK3.pdf Description: MOSFET P-CH 40V 50A TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 20 V
Qualification: AEC-Q101
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DMPH4025SFVWQ-13 DMPH4025SFVWQ-13 Diodes Incorporated DMPH4025SFVWQ.pdf Description: MOSFET P-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 30A, 10V
Power Dissipation (Max): 2.3W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1918 pF @ 20 V
Qualification: AEC-Q101
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DMPH4025SFVWQ-13 DMPH4025SFVWQ-13 Diodes Incorporated DMPH4025SFVWQ.pdf Description: MOSFET P-CH 40V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 30A, 10V
Power Dissipation (Max): 2.3W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1918 pF @ 20 V
Qualification: AEC-Q101
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DMPH4015SK3-13 DMPH4015SK3-13 Diodes Incorporated DMPH4015SK3.PDF Description: MOSFET P-CHANNEL 40V 45A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
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DMPH4015SK3-13 DMPH4015SK3-13 Diodes Incorporated DMPH4015SK3.PDF Description: MOSFET P-CHANNEL 40V 45A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
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DMPH4026SFVW-7 DMPH4026SFVW-7 Diodes Incorporated DMPH4026SFVW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 20 V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 52A (Tc)
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DMPH4026SFVW-13 DMPH4026SFVW-13 Diodes Incorporated DMPH4026SFVW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 20 V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 52A (Tc)
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DMPH4026SFVWQ-13 DMPH4026SFVWQ-13 Diodes Incorporated DMPH4026SFVWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 20 V
Qualification: AEC-Q101
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 52A (Tc)
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DMPH4026SFVWQ-7 DMPH4026SFVWQ-7 Diodes Incorporated DMPH4026SFVWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 20 V
Qualification: AEC-Q101
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 52A (Tc)
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DMPH4016SPSW-13 DMPH4016SPSW-13 Diodes Incorporated DMPH4016SPSW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Current - Continuous Drain (Id) @ 25°C: 90.7A (Tc)
Power Dissipation (Max): 4.6W (Ta), 143W (Tc)
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DMPH4009SPSW-13 DMPH4009SPSW-13 Diodes Incorporated DMPH4009SPSW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Current - Continuous Drain (Id) @ 25°C: 83.4A (Tc)
Power Dissipation (Max): 4.6W (Ta), 143W (Tc)
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DMPH4016SSS-13 DMPH4016SSS-13 Diodes Incorporated DMPH4016SSS.pdf Description: MOSFET BVDSS: 31V~40V SO-8 T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.9W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
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DMPH4009SSS-13 DMPH4009SSS-13 Diodes Incorporated DMPH4009SSS.pdf Description: MOSFET BVDSS: 31V~40V SO-8 T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.8W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Produkt ist nicht verfügbar
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DMPH4016SSSQ-13 DMPH4016SSSQ-13 Diodes Incorporated DMPH4016SSSQ.pdf Description: MOSFET BVDSS: 31V~40V SO-8 T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.9W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMPH4009SSSQ-13 Diodes Incorporated DMPH4009SSSQ.pdf Description: MOSFET BVDSS: 31V~40V SO-8 T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.8W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Qualification: AEC-Q101
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DMPH4016SPSWQ-13 DMPH4016SPSWQ-13 Diodes Incorporated DMPH4016SPSWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Qualification: AEC-Q101
Current - Continuous Drain (Id) @ 25°C: 90.7A (Tc)
Power Dissipation (Max): 4.6W (Ta), 143W (Tc)
Produkt ist nicht verfügbar
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DMPH4009SPSWQ-13 Diodes Incorporated DMPH4009SPSWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Qualification: AEC-Q101
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DMPH4023SPDWQ-13 Diodes Incorporated Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMPH4013SPSWQ-13 Diodes Incorporated Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52C7V5TQ-7-F BZT52C7V5TQ-7-F Diodes Incorporated ds30502.pdf Description: DIODE ZENER 7.5V 300MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
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BZT52C7V5TQ-7-F BZT52C7V5TQ-7-F Diodes Incorporated ds30502.pdf Description: DIODE ZENER 7.5V 300MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
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BZT52C7V5Q-7-F BZT52C7V5Q-7-F Diodes Incorporated ds18004.pdf Description: DIODE ZENER 7.5V 370MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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2DB1386R-13 ds31147.pdf
2DB1386R-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 5A SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Qualification: AEC-Q101
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12+1.48 EUR
20+0.92 EUR
100+0.6 EUR
500+0.46 EUR
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DMN10H6D2LFDB-13 DMN10H6D2LFDB.pdf
DMN10H6D2LFDB-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 100V 0.27A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 50V
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: U-DFN2020-6 (Type B)
Produkt ist nicht verfügbar
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DMP2090UFDB-13 DMP2090UFDB.pdf
DMP2090UFDB-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 790mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
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DMN2053UFDB-13 DMN2053UFDB.pdf
DMN2053UFDB-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 4.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Produkt ist nicht verfügbar
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DMC67D8UFDB-13
Hersteller: Diodes Incorporated
Description: MOSFET 41V-60V U-DFN2020-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZX84B3V3Q-7-F BZX84Bxxx.pdf
BZX84B3V3Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.3V 300MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 207990 Stücke:
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Anzahl Preis
100+0.18 EUR
164+0.11 EUR
325+0.054 EUR
500+0.053 EUR
1000+0.051 EUR
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2N7002DWK-7 2N7002DWK.pdf
2N7002DWK-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.261A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 330mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 261mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
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59+0.3 EUR
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2N7002DWS-7 2N7002DWS.pdf
2N7002DWS-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.247A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 247mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
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3000+0.12 EUR
6000+0.11 EUR
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2N7002DWS-7 2N7002DWS.pdf
2N7002DWS-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.247A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 247mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
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30+0.6 EUR
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FK2000050 FK-1-8V.pdf
FK2000050
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM3225 T&
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Type: XO (Standard)
Height - Seated (Max): 0.045" (1.15mm)
Base Resonator: Crystal
Supplier Device Package: 4-VDFN (3.2x2.5)
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FK2000050 FK-1-8V.pdf
FK2000050
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM3225 T&
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Type: XO (Standard)
Height - Seated (Max): 0.045" (1.15mm)
Base Resonator: Crystal
Supplier Device Package: 4-VDFN (3.2x2.5)
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PAM2325AGPADJ PAM2325.pdf
PAM2325AGPADJ
Hersteller: Diodes Incorporated
Description: IC REG BUCK ADJ 3.5A 12QFN
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-QFN (2x2)
Synchronous Rectifier: Yes
Voltage - Output (Max): 4V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1V
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PAM2325AGPADJ PAM2325.pdf
PAM2325AGPADJ
Hersteller: Diodes Incorporated
Description: IC REG BUCK ADJ 3.5A 12QFN
Packaging: Cut Tape (CT)
Package / Case: 12-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-QFN (2x2)
Synchronous Rectifier: Yes
Voltage - Output (Max): 4V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1V
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12+1.48 EUR
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MBR3035PT ds23017.pdf
MBR3035PT
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SCHOTT 35V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Produkt ist nicht verfügbar
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FW384WFIN1 FW.pdf
FW384WFIN1
Hersteller: Diodes Incorporated
Description: CRYSTAL 38.4000MHZ 7PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 90°C
Frequency Stability: ±12ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.022" (0.55mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 38.4 MHz
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FW384WFIN1 FW.pdf
FW384WFIN1
Hersteller: Diodes Incorporated
Description: CRYSTAL 38.4000MHZ 7PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 90°C
Frequency Stability: ±12ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.022" (0.55mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 38.4 MHz
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16+1.13 EUR
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100+0.84 EUR
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DMTH4M95SPSQ-13-01
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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Anzahl Preis
2500+2.15 EUR
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DMN3009LFV-7 DMN3009LFV.pdf
DMN3009LFV-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
auf Bestellung 26000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.28 EUR
4000+0.25 EUR
6000+0.23 EUR
10000+0.22 EUR
20000+0.21 EUR
Mindestbestellmenge: 2000
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DMN3009LFV-7 DMN3009LFV.pdf
DMN3009LFV-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
auf Bestellung 26042 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
27+0.66 EUR
100+0.46 EUR
500+0.35 EUR
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SB190-T ds30116.pdf
SB190-T
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 90V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Produkt ist nicht verfügbar
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SB190-T ds30116.pdf
SB190-T
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 90V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Produkt ist nicht verfügbar
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MMBD3004S-13-F
MMBD3004S-13-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 300V 225MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
auf Bestellung 10000 Stücke:
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Anzahl Preis
10000+0.058 EUR
Mindestbestellmenge: 10000
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MMBD3004S-13-F
MMBD3004S-13-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 300V 225MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
auf Bestellung 10000 Stücke:
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39+0.46 EUR
58+0.31 EUR
118+0.15 EUR
500+0.12 EUR
1000+0.087 EUR
2000+0.075 EUR
5000+0.07 EUR
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ES2GA_HF ES2DA-ES2JA_LS.pdf
ES2GA_HF
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 400V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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TT10M_HF TT10M_LS.pdf
TT10M_HF
Hersteller: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE TTL T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TTL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 33000 Stücke:
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Anzahl Preis
1500+0.4 EUR
3000+0.36 EUR
4500+0.34 EUR
7500+0.32 EUR
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TT10M_HF TT10M_LS.pdf
TT10M_HF
Hersteller: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE TTL T&R
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TTL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 34128 Stücke:
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Anzahl Preis
12+1.5 EUR
19+0.93 EUR
100+0.61 EUR
500+0.46 EUR
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TT10M-13 TT10M.pdf
TT10M-13
Hersteller: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE TTL T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TTL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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TT10M-13 TT10M.pdf
TT10M-13
Hersteller: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE TTL T&R
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TTL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 745 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.11 EUR
24+0.75 EUR
100+0.51 EUR
500+0.41 EUR
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SMBJ7.5AQ-13-F ds40740.pdf
SMBJ7.5AQ-13-F
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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74HC05S14-13 74HC05.pdf
74HC05S14-13
Hersteller: Diodes Incorporated
Description: IC INVERTER 6CH 1-INP 14SO
Packaging: Tape & Reel (TR)
Features: Open Drain
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: -, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SO
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 20 µA
Produkt ist nicht verfügbar
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74HC05S14-13 74HC05.pdf
74HC05S14-13
Hersteller: Diodes Incorporated
Description: IC INVERTER 6CH 1-INP 14SO
Packaging: Cut Tape (CT)
Features: Open Drain
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: -, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SO
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 20 µA
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
53+0.33 EUR
60+0.3 EUR
100+0.26 EUR
250+0.24 EUR
500+0.22 EUR
1000+0.21 EUR
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B350BQ-13-F B340BQ-B360BQ.pdf
B350BQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SB350-B SB320-360.pdf
SB350-B
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Produkt ist nicht verfügbar
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B350BE-13 B350%28B%2CC%29E%2C%20B360%28B%2CC%29E.pdf
B350BE-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Produkt ist nicht verfügbar
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B350B-13-F-2477
B350B-13-F-2477
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Produkt ist nicht verfügbar
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B350AQ-13-F B320AQ-B360AQ.pdf
B350AQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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B350AQ-13-F B320AQ-B360AQ.pdf
B350AQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 3A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
auf Bestellung 4927 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
44+0.41 EUR
100+0.27 EUR
500+0.22 EUR
1000+0.19 EUR
2000+0.18 EUR
Mindestbestellmenge: 28
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DMPH4023SK3-13 DMPH4023SK3.pdf
DMPH4023SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 50A TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMPH4023SK3-13 DMPH4023SK3.pdf
DMPH4023SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 50A TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 1575 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.5 EUR
18+1 EUR
100+0.69 EUR
500+0.55 EUR
1000+0.5 EUR
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DMPH4025SFVWQ-13 DMPH4025SFVWQ.pdf
DMPH4025SFVWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 30A, 10V
Power Dissipation (Max): 2.3W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1918 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMPH4025SFVWQ-13 DMPH4025SFVWQ.pdf
DMPH4025SFVWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 30A, 10V
Power Dissipation (Max): 2.3W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1918 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2848 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.01 EUR
14+1.26 EUR
100+0.83 EUR
500+0.65 EUR
1000+0.59 EUR
Mindestbestellmenge: 9
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DMPH4015SK3-13 DMPH4015SK3.PDF
DMPH4015SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CHANNEL 40V 45A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.63 EUR
5000+0.59 EUR
7500+0.58 EUR
Mindestbestellmenge: 2500
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DMPH4015SK3-13 DMPH4015SK3.PDF
DMPH4015SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CHANNEL 40V 45A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
auf Bestellung 19942 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.39 EUR
12+1.52 EUR
100+1.02 EUR
500+0.8 EUR
1000+0.73 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4026SFVW-7 DMPH4026SFVW.pdf
DMPH4026SFVW-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 20 V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 52A (Tc)
Produkt ist nicht verfügbar
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DMPH4026SFVW-13 DMPH4026SFVW.pdf
DMPH4026SFVW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 20 V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 52A (Tc)
Produkt ist nicht verfügbar
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DMPH4026SFVWQ-13 DMPH4026SFVWQ.pdf
DMPH4026SFVWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 20 V
Qualification: AEC-Q101
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 52A (Tc)
Produkt ist nicht verfügbar
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DMPH4026SFVWQ-7 DMPH4026SFVWQ.pdf
DMPH4026SFVWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 20 V
Qualification: AEC-Q101
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 52A (Tc)
Produkt ist nicht verfügbar
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DMPH4016SPSW-13 DMPH4016SPSW.pdf
DMPH4016SPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Current - Continuous Drain (Id) @ 25°C: 90.7A (Tc)
Power Dissipation (Max): 4.6W (Ta), 143W (Tc)
Produkt ist nicht verfügbar
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DMPH4009SPSW-13 DMPH4009SPSW.pdf
DMPH4009SPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Current - Continuous Drain (Id) @ 25°C: 83.4A (Tc)
Power Dissipation (Max): 4.6W (Ta), 143W (Tc)
Produkt ist nicht verfügbar
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DMPH4016SSS-13 DMPH4016SSS.pdf
DMPH4016SSS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V SO-8 T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.9W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Produkt ist nicht verfügbar
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DMPH4009SSS-13 DMPH4009SSS.pdf
DMPH4009SSS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V SO-8 T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.8W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Produkt ist nicht verfügbar
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DMPH4016SSSQ-13 DMPH4016SSSQ.pdf
DMPH4016SSSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V SO-8 T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.9W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMPH4009SSSQ-13 DMPH4009SSSQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V SO-8 T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.8W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.75 EUR
Mindestbestellmenge: 2500
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DMPH4016SPSWQ-13 DMPH4016SPSWQ.pdf
DMPH4016SPSWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Qualification: AEC-Q101
Current - Continuous Drain (Id) @ 25°C: 90.7A (Tc)
Power Dissipation (Max): 4.6W (Ta), 143W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4009SPSWQ-13 DMPH4009SPSWQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.77 EUR
Mindestbestellmenge: 2500
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DMPH4023SPDWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMPH4013SPSWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52C7V5TQ-7-F ds30502.pdf
BZT52C7V5TQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 7.5V 300MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.049 EUR
6000+0.045 EUR
9000+0.042 EUR
Mindestbestellmenge: 3000
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BZT52C7V5TQ-7-F ds30502.pdf
BZT52C7V5TQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 7.5V 300MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
auf Bestellung 56980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
105+0.17 EUR
222+0.08 EUR
500+0.079 EUR
1000+0.078 EUR
Mindestbestellmenge: 72
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BZT52C7V5Q-7-F ds18004.pdf
BZT52C7V5Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 7.5V 370MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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