DMP2110UVT-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 1.8A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 740mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
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Technische Details DMP2110UVT-7 Diodes Incorporated
Description: MOSFET 2P-CH 20V 1.8A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 740mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V, Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: TSOT-26.
Weitere Produktangebote DMP2110UVT-7 nach Preis ab 0.12 EUR bis 0.7 EUR
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DMP2110UVT-7 | Diodes Incorporated |
MOSFETs 20V P-CH MOSFET |
auf Bestellung 1847 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2110UVT-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 1.8A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 740mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-26 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2110UVT-7 |
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Hersteller: Diodes Incorporated
MOSFETs 20V P-CH MOSFET
MOSFETs 20V P-CH MOSFET
auf Bestellung 1847 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.68 EUR |
| 10+ | 0.42 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.18 EUR |
| 3000+ | 0.14 EUR |
| 6000+ | 0.12 EUR |
| DMP2110UVT-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 1.8A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 740mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
Description: MOSFET 2P-CH 20V 1.8A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 740mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 0.7 EUR |
| 36+ | 0.5 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.17 EUR |