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DMP2110UVT-7

DMP2110UVT-7 Diodes Incorporated

DMP2110UVT.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 1.8A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 740mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMP2110UVT-7 Diodes Incorporated

Description: MOSFET 2P-CH 20V 1.8A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 740mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V, Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: TSOT-26.

Weitere Produktangebote DMP2110UVT-7 nach Preis ab 0.13 EUR bis 0.70 EUR

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DMP2110UVT-7 DMP2110UVT-7 Hersteller : Diodes Incorporated DIOD_S_A0006156139_1-2542874.pdf MOSFET 20V P-CH MOSFET
auf Bestellung 2030 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.70 EUR
10+0.50 EUR
100+0.22 EUR
1000+0.18 EUR
3000+0.15 EUR
9000+0.13 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
DMP2110UVT-7 DMP2110UVT-7 Hersteller : Diodes Incorporated DMP2110UVT.pdf Description: MOSFET 2P-CH 20V 1.8A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 740mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.70 EUR
36+0.50 EUR
100+0.25 EUR
500+0.22 EUR
1000+0.17 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
DMP2110UVT-7 DMP2110UVT-7 Hersteller : Diodes Zetex dmp2110uvt.pdf Dual P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
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