DMP2110UVTQ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2P-CH 20V 1.8A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 740mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2955 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 1.25 EUR |
| 27+ | 0.98 EUR |
| 100+ | 0.59 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.37 EUR |
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Technische Details DMP2110UVTQ-7 Diodes Incorporated
Description: MOSFET 2P-CH 20V 1.8A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 740mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V, Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: TSOT-26, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMP2110UVTQ-7 nach Preis ab 0.29 EUR bis 1.26 EUR
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DMP2110UVTQ-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V~24V TSOT26 T&R 3K |
auf Bestellung 2117 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2110UVTQ-7 | Hersteller : Diodes Inc |
Dual P-Channel Enhancement Mode MOSFET |
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DMP2110UVTQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2P-CH 20V 1.8A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 740mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |