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BZT52C27Q-7-F BZT52C27Q-7-F Diodes Incorporated ds18004.pdf Description: ZENER DIODE SOD123 T&R 3K
Packaging: Cut Tape (CT)
Tolerance: ±7.04%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Qualification: AEC-Q101
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76+0.23 EUR
155+0.11 EUR
500+0.10 EUR
1000+0.07 EUR
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BZT52C27SQ-7-F BZT52C27SQ-7-F Diodes Incorporated Description: DIODE ZENER 27V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±7.04%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FES2JD_HF FES2JD_HF Diodes Incorporated Description: DIODE STANDARD 600V 2A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Supplier Device Package: DO-221AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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ES2JA_HF ES2JA_HF Diodes Incorporated ES2DA-ES2JA_LS.pdf Description: DIODE STANDARD 600V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Supplier Device Package: SMA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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LL4151-7 LL4151-7 Diodes Incorporated LL4151.pdf Description: DIODE SWITCH 50V 500MW MINIMELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: Mini MELF
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Produkt ist nicht verfügbar
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AN431AN-ATRE1 AN431AN-ATRE1 Diodes Incorporated AN431.pdf Description: IC VREF SHUNT ADJ 0.5% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 20ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Produkt ist nicht verfügbar
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AN431AN-ATRE1 AN431AN-ATRE1 Diodes Incorporated AN431.pdf Description: IC VREF SHUNT ADJ 0.5% SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±0.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 20ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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33+0.54 EUR
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250+0.40 EUR
500+0.34 EUR
1000+0.26 EUR
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BABS140 BABS140 Diodes Incorporated Description: PLANAR SCHOTTKY RECTIFIER ABS/SO
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: Schottky
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 40 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Produkt ist nicht verfügbar
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DMN2450UFB4-7B DMN2450UFB4-7B Diodes Incorporated DMN2450UFB4.pdf Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
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DMN2450UFB4-7B DMN2450UFB4-7B Diodes Incorporated DMN2450UFB4.pdf Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
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1000+0.09 EUR
2000+0.09 EUR
5000+0.08 EUR
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DMN2450UFB4-7R DMN2450UFB4-7R Diodes Incorporated DMN2450UFB4.pdf Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
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DMN2450UFB4-7R DMN2450UFB4-7R Diodes Incorporated DMN2450UFB4.pdf Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
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DMN2451UFDQ-13 DMN2451UFDQ-13 Diodes Incorporated DMN2451UFDQ.pdf Description: MOSFET N-CH 20V 900MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 200mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN1212-3 (Type C)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN2451UFDQ-7 DMN2451UFDQ-7 Diodes Incorporated DMN2451UFDQ.pdf Description: MOSFET N-CH 20V 900MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 200mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN1212-3 (Type C)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V
Qualification: AEC-Q101
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6000+0.12 EUR
15000+0.11 EUR
30000+0.10 EUR
75000+0.09 EUR
150000+0.09 EUR
Mindestbestellmenge: 3000
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FN2450038 FN2450038 Diodes Incorporated FN2450038.pdf Description: XTAL OSC XO 24.5760MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.3V
Frequency: 24.576 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FN2450045 FN2450045 Diodes Incorporated FN2450045.pdf Description: XTAL OSC XO 24.5760MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 24.576 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FN2450055Z FN2450055Z Diodes Incorporated FN2450055Z.pdf Description: XTAL OSC XO 24.5760MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 1.8V
Current - Supply (Max): 7mA
Height - Seated (Max): 0.061" (1.55mm)
Frequency: 24.576 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FD5000067 FD5000067 Diodes Incorporated FD5000067.pdf Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.8V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FD5000051 FD5000051 Diodes Incorporated FD_3-3V.pdf Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 50 MHz
Base Resonator: Crystal
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GB2400030 GB2400030 Diodes Incorporated GB_GG.pdf Description: CRYSTAL 24.0000MHZ 18PF
Packaging: Tape & Reel (TR)
Load Capacitance: 18pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 24 MHz
Produkt ist nicht verfügbar
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GB2400038 GB2400038 Diodes Incorporated GB_GG.pdf Description: CRYSTAL 24.0000MHZ 20PF
Packaging: Tape & Reel (TR)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 30 Ohms
Frequency: 24 MHz
Produkt ist nicht verfügbar
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1N5406G_HF 1N5406G_HF Diodes Incorporated Description: DIODE STANDARD 600V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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60000+0.11 EUR
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FD5000060 FD5000060 Diodes Incorporated FD_3-3V.pdf Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 90°C
Voltage - Supply: 3.3V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FR1120004 Diodes Incorporated FR_3-3V.pdf Description: XTAL OSC XO 11.2896MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 11.2896 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FK2450013Q FK2450013Q Diodes Incorporated FK2450013Q.pdf Description: XTAL OSC XO 24.5760MHZ CMOS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.9V
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 24.576 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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1N5399S_HF 1N5399S_HF Diodes Incorporated Description: DIODE STANDARD 1000V 1.5A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Supplier Device Package: DO-41
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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15000+0.03 EUR
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SBR60A200CT SBR60A200CT Diodes Incorporated SBR60A200CT.pdf Description: DIODE ARR SBR 200V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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500+3.89 EUR
1000+3.33 EUR
2000+3.13 EUR
5000+3.01 EUR
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SBR60A150CT-G SBR60A150CT-G Diodes Incorporated SBR60A150CT.pdf Description: DIODE ARR SBR 150V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
Produkt ist nicht verfügbar
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SBR60A60CT-G SBR60A60CT-G Diodes Incorporated SBR60A60CT.pdf Description: DIODE ARR SBR 60V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar
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SBR60A300CT-2223 SBR60A300CT-2223 Diodes Incorporated Description: DIODE ARR SBR 300V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Produkt ist nicht verfügbar
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SBR60A60CT-G-2223 SBR60A60CT-G-2223 Diodes Incorporated Description: DIODE ARR SBR 60V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
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SBR60A150CT-2223 SBR60A150CT-2223 Diodes Incorporated Description: DIODE ARR SBR 150V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
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SBR60A60CT-2223 SBR60A60CT-2223 Diodes Incorporated Description: DIODE ARR SBR 60V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar
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FR1220009 Diodes Incorporated FR_3-3V.pdf Description: XTAL OSC XO 12.2880MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.3V
Frequency: 12.288 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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ZXTN5551ZTA ZXTN5551ZTA Diodes Incorporated ZXTN5551Z.pdf Description: TRANS NPN 160V 0.6A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1.2 W
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DMTH10H032LFVW-7 DMTH10H032LFVW-7 Diodes Incorporated DMTH10H032LFVW.pdf Description: MOSFET BVDSS: 61V~100V PowerDI33
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
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DMTH10H032LFVWQ-7 DMTH10H032LFVWQ-7 Diodes Incorporated DMTH10H032LFVWQ.pdf Description: MOSFET BVDSS: 61V~100V PowerDI33
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
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DMTH10H032LFVWQ-13 DMTH10H032LFVWQ-13 Diodes Incorporated DMTH10H032LFVWQ.pdf Description: MOSFET BVDSS: 61V~100V PowerDI33
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
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DMT10H032LDV-7 DMT10H032LDV-7 Diodes Incorporated DMT10H032LDV.pdf Description: MOSFET 2N-CH 100V 18A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
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DMTH10H032LPDW-13 DMTH10H032LPDW-13 Diodes Incorporated DMTH10H032LPDW.pdf Description: MOSFET 2N-CH 100V 24A POWERDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 37W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
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DMTH10H032LPDWQ-13 DMTH10H032LPDWQ-13 Diodes Incorporated DMTH10H032LPDWQ.pdf Description: MOSFET 2N-CH 100V 24A POWERDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 37W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
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DMHT10H032LFJ-13 Diodes Incorporated DMHT10H032LFJ.pdf Description: MOSFET 4N-CH 100V 6A 12VDFN
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerVDFN
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN5045-12 (Type C)
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SMBJ85AQ-13-F SMBJ85AQ-13-F Diodes Incorporated ds40740.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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74LVC1G126FW4-7 74LVC1G126FW4-7 Diodes Incorporated 74LVC1G126.pdf Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN1010-6
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AP7375Q-33Y-13 AP7375Q-33Y-13 Diodes Incorporated AP7375Q.pdf Description: IC REG LINEAR 3.3V 300MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
PSRR: 85dB (1kHz)
Voltage Dropout (Max): 1.4V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
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AP7333-12SRG-7 AP7333-12SRG-7 Diodes Incorporated AP7333.pdf Description: IC REG LINEAR 1.2V 300MA SOT23R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT23R
Voltage - Output (Min/Fixed): 1.2V
PSRR: 65dB (100Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 85 µA
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AP7333-12SRG-7 AP7333-12SRG-7 Diodes Incorporated AP7333.pdf Description: IC REG LINEAR 1.2V 300MA SOT23R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT23R
Voltage - Output (Min/Fixed): 1.2V
PSRR: 65dB (100Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 85 µA
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DFLT170A-7 DFLT170A-7 Diodes Incorporated DFLT5V0A_DFLT220A.pdf Description: TVS DIODE 170VWM 281VC PWRDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 810mA
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 281V
Power - Peak Pulse: 225W
Power Line Protection: No
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DMTH6004SPSQ-13 DMTH6004SPSQ-13 Diodes Incorporated DMTH6004SPSQ.pdf Description: MOSFET N-CH 60V 100A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
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DMTH6004SPSQ-13 DMTH6004SPSQ-13 Diodes Incorporated DMTH6004SPSQ.pdf Description: MOSFET N-CH 60V 100A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
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DMTH62M8SPS-13 DMTH62M8SPS-13 Diodes Incorporated DMTH62M8SPS.pdf Description: MOSFET BVDSS: 41V-60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Produkt ist nicht verfügbar
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KX2132727Q Diodes Incorporated Description: CRYSTAL OSCILLATOR
Packaging: Bulk
Produkt ist nicht verfügbar
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P6SMAJ5.0ADF-13 P6SMAJ5.0ADF-13 Diodes Incorporated P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Description: TVS DIODE 5VWM 9.2VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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DMP2101UCP9-7 Diodes Incorporated DMP2101UCP9.pdf Description: MOSFET 2P-CH 20V 2.5A 9DSN1515
Packaging: Bulk
Package / Case: 9-XFBGA, DSBGA
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 970mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 392pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DSN1515-9 (Type B)
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DMTH61M5SPSW-13 Diodes Incorporated DMTH61M5SPSW.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
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DMTH61M5SPSW-13 Diodes Incorporated DMTH61M5SPSW.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
auf Bestellung 114970 Stücke:
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10+2.65 EUR
100+2.11 EUR
500+1.78 EUR
1000+1.51 EUR
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DMTH61M8SPS-13 DMTH61M8SPS-13 Diodes Incorporated DMTH61M8SPS.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
Produkt ist nicht verfügbar
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DMTH61M5SPSWQ-13 Diodes Incorporated DMTH61M5SPSWQ.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH61M8SPSQ-13 DMTH61M8SPSQ-13 Diodes Incorporated DMTH61M8SPSQ.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
Qualification: AEC-Q101
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DMTH61M8LPSQ-13 DMTH61M8LPSQ-13 Diodes Incorporated DMTH61M8LPSQ.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C27Q-7-F ds18004.pdf
BZT52C27Q-7-F
Hersteller: Diodes Incorporated
Description: ZENER DIODE SOD123 T&R 3K
Packaging: Cut Tape (CT)
Tolerance: ±7.04%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Qualification: AEC-Q101
auf Bestellung 6468 Stücke:
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53+0.33 EUR
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500+0.10 EUR
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BZT52C27SQ-7-F
BZT52C27SQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 27V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±7.04%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FES2JD_HF
FES2JD_HF
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 600V 2A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Supplier Device Package: DO-221AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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10000+0.13 EUR
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ES2JA_HF ES2DA-ES2JA_LS.pdf
ES2JA_HF
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 600V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Supplier Device Package: SMA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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LL4151-7 LL4151.pdf
LL4151-7
Hersteller: Diodes Incorporated
Description: DIODE SWITCH 50V 500MW MINIMELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: Mini MELF
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Produkt ist nicht verfügbar
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AN431AN-ATRE1 AN431.pdf
AN431AN-ATRE1
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT ADJ 0.5% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 20ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Produkt ist nicht verfügbar
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AN431AN-ATRE1 AN431.pdf
AN431AN-ATRE1
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT ADJ 0.5% SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±0.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 20ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
auf Bestellung 2555 Stücke:
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Anzahl Preis
26+0.69 EUR
31+0.58 EUR
33+0.54 EUR
100+0.43 EUR
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BABS140
BABS140
Hersteller: Diodes Incorporated
Description: PLANAR SCHOTTKY RECTIFIER ABS/SO
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: Schottky
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 40 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Produkt ist nicht verfügbar
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DMN2450UFB4-7B DMN2450UFB4.pdf
DMN2450UFB4-7B
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
auf Bestellung 8180000 Stücke:
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Anzahl Preis
10000+0.06 EUR
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50000+0.05 EUR
250000+0.05 EUR
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DMN2450UFB4-7B DMN2450UFB4.pdf
DMN2450UFB4-7B
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
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59+0.30 EUR
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178+0.10 EUR
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DMN2450UFB4-7R DMN2450UFB4.pdf
DMN2450UFB4-7R
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.07 EUR
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DMN2450UFB4-7R DMN2450UFB4.pdf
DMN2450UFB4-7R
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
auf Bestellung 7448 Stücke:
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Anzahl Preis
44+0.40 EUR
71+0.25 EUR
178+0.10 EUR
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DMN2451UFDQ-13 DMN2451UFDQ.pdf
DMN2451UFDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 900MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 200mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN1212-3 (Type C)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN2451UFDQ-7 DMN2451UFDQ.pdf
DMN2451UFDQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 900MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 200mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN1212-3 (Type C)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 2331000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.12 EUR
15000+0.11 EUR
30000+0.10 EUR
75000+0.09 EUR
150000+0.09 EUR
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FN2450038 FN2450038.pdf
FN2450038
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 24.5760MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.3V
Frequency: 24.576 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FN2450045 FN2450045.pdf
FN2450045
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 24.5760MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 24.576 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FN2450055Z FN2450055Z.pdf
FN2450055Z
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 24.5760MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 1.8V
Current - Supply (Max): 7mA
Height - Seated (Max): 0.061" (1.55mm)
Frequency: 24.576 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FD5000067 FD5000067.pdf
FD5000067
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.8V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FD5000051 FD_3-3V.pdf
FD5000051
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 50 MHz
Base Resonator: Crystal
auf Bestellung 8000 Stücke:
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Anzahl Preis
1000+1.32 EUR
Mindestbestellmenge: 1000
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GB2400030 GB_GG.pdf
GB2400030
Hersteller: Diodes Incorporated
Description: CRYSTAL 24.0000MHZ 18PF
Packaging: Tape & Reel (TR)
Load Capacitance: 18pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 24 MHz
Produkt ist nicht verfügbar
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GB2400038 GB_GG.pdf
GB2400038
Hersteller: Diodes Incorporated
Description: CRYSTAL 24.0000MHZ 20PF
Packaging: Tape & Reel (TR)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 30 Ohms
Frequency: 24 MHz
Produkt ist nicht verfügbar
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1N5406G_HF
1N5406G_HF
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 600V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 200400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1200+0.18 EUR
2400+0.16 EUR
3600+0.15 EUR
6000+0.14 EUR
12000+0.13 EUR
30000+0.12 EUR
60000+0.11 EUR
Mindestbestellmenge: 1200
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FD5000060 FD_3-3V.pdf
FD5000060
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 90°C
Voltage - Supply: 3.3V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FR1120004 FR_3-3V.pdf
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 11.2896MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 11.2896 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FK2450013Q FK2450013Q.pdf
FK2450013Q
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 24.5760MHZ CMOS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.9V
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 24.576 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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1N5399S_HF
1N5399S_HF
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 1000V 1.5A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Supplier Device Package: DO-41
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.04 EUR
10000+0.04 EUR
15000+0.03 EUR
Mindestbestellmenge: 5000
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SBR60A200CT SBR60A200CT.pdf
SBR60A200CT
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 200V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
auf Bestellung 6117 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.44 EUR
50+5.10 EUR
100+4.37 EUR
500+3.89 EUR
1000+3.33 EUR
2000+3.13 EUR
5000+3.01 EUR
Mindestbestellmenge: 3
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SBR60A150CT-G SBR60A150CT.pdf
SBR60A150CT-G
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 150V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
Produkt ist nicht verfügbar
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SBR60A60CT-G SBR60A60CT.pdf
SBR60A60CT-G
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 60V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar
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SBR60A300CT-2223
SBR60A300CT-2223
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 300V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Produkt ist nicht verfügbar
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SBR60A60CT-G-2223
SBR60A60CT-G-2223
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 60V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar
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SBR60A150CT-2223
SBR60A150CT-2223
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 150V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
Produkt ist nicht verfügbar
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SBR60A60CT-2223
SBR60A60CT-2223
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 60V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar
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FR1220009 FR_3-3V.pdf
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 12.2880MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.3V
Frequency: 12.288 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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ZXTN5551ZTA ZXTN5551Z.pdf
ZXTN5551ZTA
Hersteller: Diodes Incorporated
Description: TRANS NPN 160V 0.6A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1.2 W
Produkt ist nicht verfügbar
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DMTH10H032LFVW-7 DMTH10H032LFVW.pdf
DMTH10H032LFVW-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V PowerDI33
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.37 EUR
Mindestbestellmenge: 2000
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DMTH10H032LFVWQ-7 DMTH10H032LFVWQ.pdf
DMTH10H032LFVWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V PowerDI33
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH10H032LFVWQ-13 DMTH10H032LFVWQ.pdf
DMTH10H032LFVWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V PowerDI33
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
19+0.95 EUR
100+0.66 EUR
500+0.55 EUR
1000+0.47 EUR
2000+0.42 EUR
5000+0.40 EUR
10000+0.37 EUR
Mindestbestellmenge: 17
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DMT10H032LDV-7 DMT10H032LDV.pdf
DMT10H032LDV-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 100V 18A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Produkt ist nicht verfügbar
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DMTH10H032LPDW-13 DMTH10H032LPDW.pdf
DMTH10H032LPDW-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 100V 24A POWERDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 37W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.64 EUR
Mindestbestellmenge: 2500
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DMTH10H032LPDWQ-13 DMTH10H032LPDWQ.pdf
DMTH10H032LPDWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 100V 24A POWERDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 37W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.68 EUR
Mindestbestellmenge: 2500
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DMHT10H032LFJ-13 DMHT10H032LFJ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 4N-CH 100V 6A 12VDFN
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerVDFN
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN5045-12 (Type C)
Produkt ist nicht verfügbar
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SMBJ85AQ-13-F ds40740.pdf
SMBJ85AQ-13-F
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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74LVC1G126FW4-7 74LVC1G126.pdf
74LVC1G126FW4-7
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN1010-6
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.14 EUR
Mindestbestellmenge: 5000
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AP7375Q-33Y-13 AP7375Q.pdf
AP7375Q-33Y-13
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3.3V 300MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
PSRR: 85dB (1kHz)
Voltage Dropout (Max): 1.4V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.30 EUR
5000+0.27 EUR
7500+0.26 EUR
12500+0.25 EUR
17500+0.24 EUR
25000+0.23 EUR
Mindestbestellmenge: 2500
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AP7333-12SRG-7 AP7333.pdf
AP7333-12SRG-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1.2V 300MA SOT23R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT23R
Voltage - Output (Min/Fixed): 1.2V
PSRR: 65dB (100Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 85 µA
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
Mindestbestellmenge: 3000
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AP7333-12SRG-7 AP7333.pdf
AP7333-12SRG-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1.2V 300MA SOT23R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT23R
Voltage - Output (Min/Fixed): 1.2V
PSRR: 65dB (100Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 85 µA
auf Bestellung 17906 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
61+0.29 EUR
69+0.26 EUR
100+0.22 EUR
250+0.20 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 42
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DFLT170A-7 DFLT5V0A_DFLT220A.pdf
DFLT170A-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 170VWM 281VC PWRDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 810mA
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 281V
Power - Peak Pulse: 225W
Power Line Protection: No
Produkt ist nicht verfügbar
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DMTH6004SPSQ-13 DMTH6004SPSQ.pdf
DMTH6004SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
auf Bestellung 65000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.58 EUR
5000+1.52 EUR
Mindestbestellmenge: 2500
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DMTH6004SPSQ-13 DMTH6004SPSQ.pdf
DMTH6004SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
auf Bestellung 65000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.52 EUR
10+2.92 EUR
100+2.32 EUR
500+1.97 EUR
1000+1.67 EUR
Mindestbestellmenge: 5
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DMTH62M8SPS-13 DMTH62M8SPS.pdf
DMTH62M8SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V-60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Produkt ist nicht verfügbar
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KX2132727Q
Hersteller: Diodes Incorporated
Description: CRYSTAL OSCILLATOR
Packaging: Bulk
Produkt ist nicht verfügbar
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P6SMAJ5.0ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
P6SMAJ5.0ADF-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 5VWM 9.2VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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DMP2101UCP9-7 DMP2101UCP9.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 2.5A 9DSN1515
Packaging: Bulk
Package / Case: 9-XFBGA, DSBGA
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 970mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 392pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DSN1515-9 (Type B)
Produkt ist nicht verfügbar
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DMTH61M5SPSW-13 DMTH61M5SPSW.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
auf Bestellung 112500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.44 EUR
5000+1.38 EUR
Mindestbestellmenge: 2500
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DMTH61M5SPSW-13 DMTH61M5SPSW.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
auf Bestellung 114970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.19 EUR
10+2.65 EUR
100+2.11 EUR
500+1.78 EUR
1000+1.51 EUR
Mindestbestellmenge: 6
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DMTH61M8SPS-13 DMTH61M8SPS.pdf
DMTH61M8SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMTH61M5SPSWQ-13 DMTH61M5SPSWQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH61M8SPSQ-13 DMTH61M8SPSQ.pdf
DMTH61M8SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.60 EUR
5000+1.54 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMTH61M8LPSQ-13 DMTH61M8LPSQ.pdf
DMTH61M8LPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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