DMN52D0UDM-7 Diodes Incorporated
| Anzahl | Preis |
|---|---|
| 5+ | 0.62 EUR |
| 10+ | 0.44 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.16 EUR |
| 3000+ | 0.14 EUR |
| 6000+ | 0.12 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN52D0UDM-7 Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT26 T&R, Supplier Device Package: SOT-26, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Standard, Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 10V, Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V, Input Capacitance (Ciss) (Max) @ Vds: 42.4pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 410mA (Ta), Drain to Source Voltage (Vdss): 50V, Power - Max: 490mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel, Mounting Type: Surface Mount, Package / Case: SOT-23-6, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN52D0UDM-7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
DMN52D0UDM-7 | Diodes Incorporated |
 Description: MOSFET BVDSS: 41V~60V SOT26 T&RSupplier Device Package: SOT-26 Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Input Capacitance (Ciss) (Max) @ Vds: 42.4pF @ 25V Current - Continuous Drain (Id) @ 25°C: 410mA (Ta) Drain to Source Voltage (Vdss): 50V Power - Max: 490mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMN52D0UDM-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT26 T&R
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 10V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Input Capacitance (Ciss) (Max) @ Vds: 42.4pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Drain to Source Voltage (Vdss): 50V
Power - Max: 490mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET BVDSS: 41V~60V SOT26 T&R
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 10V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Input Capacitance (Ciss) (Max) @ Vds: 42.4pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Drain to Source Voltage (Vdss): 50V
Power - Max: 490mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH