DMN53D0LQ-13 Diodes Zetex
auf Bestellung 1160000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.056 EUR |
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Technische Details DMN53D0LQ-13 Diodes Zetex
Description: MOSFET N-CH 50V 500MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, Power Dissipation (Max): 370mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-23-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote DMN53D0LQ-13 nach Preis ab 0.061 EUR bis 0.62 EUR
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DMN53D0LQ-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 50V 500MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1160000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN53D0LQ-13 | Hersteller : Diodes Incorporated |
MOSFET 2N7002 Family |
auf Bestellung 73390 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN53D0LQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 50V 500MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1169900 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN53D0LQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 50V 0.5A Automotive AEC-Q101 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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DMN53D0LQ-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 50V 0.5A Automotive 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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DMN53D0LQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; 540mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.5A Power dissipation: 0.54W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMN53D0LQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; 540mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.5A Power dissipation: 0.54W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |