DMN52D0UV-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.48A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Rds On (Max) @ Id, Vgs: 2Ohm @ 5mA, 5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Drain to Source Voltage (Vdss): 50V
Power - Max: 480mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.14 EUR |
| 6000+ | 0.13 EUR |
| 9000+ | 0.11 EUR |
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Technische Details DMN52D0UV-7 Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.48A SOT563, Supplier Device Package: SOT-563, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V, Rds On (Max) @ Id, Vgs: 2Ohm @ 5mA, 5V, Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), Drain to Source Voltage (Vdss): 50V, Power - Max: 480mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN52D0UV-7 nach Preis ab 0.14 EUR bis 0.77 EUR
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DMN52D0UV-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V~60V SOT563 T&R 3K |
auf Bestellung 272 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN52D0UV-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 50V 0.48A SOT563 Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 5mA, 5V Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta) Drain to Source Voltage (Vdss): 50V Power - Max: 480mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
auf Bestellung 69000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN52D0UV-7 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V~60V SOT563 T&R 3K
MOSFETs MOSFET BVDSS: 41V~60V SOT563 T&R 3K
auf Bestellung 272 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.64 EUR |
| 10+ | 0.42 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.16 EUR |
| 3000+ | 0.14 EUR |
| DMN52D0UV-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.48A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Rds On (Max) @ Id, Vgs: 2Ohm @ 5mA, 5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Drain to Source Voltage (Vdss): 50V
Power - Max: 480mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 50V 0.48A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Rds On (Max) @ Id, Vgs: 2Ohm @ 5mA, 5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Drain to Source Voltage (Vdss): 50V
Power - Max: 480mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 23+ | 0.77 EUR |
| 33+ | 0.54 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.16 EUR |