DMNH6035SPDW-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 33A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 68W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type R)
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Technische Details DMNH6035SPDW-13 Diodes Incorporated
Description: MOSFET 2N-CH 60V 33A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.4W (Ta), 68W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V, Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type R).
Weitere Produktangebote DMNH6035SPDW-13 nach Preis ab 0.84 EUR bis 3.06 EUR
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DMNH6035SPDW-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V~60V PowerDI5060-8/SWP T&R 2.5K |
auf Bestellung 2168 Stücke: Lieferzeit 10-14 Tag (e) |
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DMNH6035SPDW-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 33A PWRDI50 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W (Ta), 68W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type R) |
auf Bestellung 7335 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMNH6035SPDW-13 |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V~60V PowerDI5060-8/SWP T&R 2.5K
MOSFETs MOSFET BVDSS: 41V~60V PowerDI5060-8/SWP T&R 2.5K
auf Bestellung 2168 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.82 EUR |
| 10+ | 1.87 EUR |
| 100+ | 1.27 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.93 EUR |
| 2500+ | 0.84 EUR |
| DMNH6035SPDW-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 33A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 68W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type R)
Description: MOSFET 2N-CH 60V 33A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 68W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type R)
auf Bestellung 7335 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.06 EUR |
| 10+ | 1.95 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.95 EUR |