DMC4050SSD-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 40V 5.3A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 37.56nC @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1790.8pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Technische Details DMC4050SSD-13 Diodes Incorporated
Description: MOSFET N/P-CH 40V 5.3A 8SO, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1.8V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 37.56nC @ 10V, Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1790.8pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 5.3A, Drain to Source Voltage (Vdss): 40V, Power - Max: 1.8W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote DMC4050SSD-13 nach Preis ab 0.43 EUR bis 1.6 EUR
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DMC4050SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Polarisation: unipolar Kind of transistor: complementary pair Kind of channel: enhancement Mounting: SMD Type of transistor: N/P-MOSFET Case: SO8 Drain-source voltage: 40/-40V Drain current: 5.8/-5.5A On-state resistance: 45/45mΩ Power dissipation: 1.8W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC4050SSD-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS |
auf Bestellung 3338 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC4050SSD-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 40V 5.3A 8SO Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1.8V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 37.56nC @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1790.8pF @ 20V Current - Continuous Drain (Id) @ 25°C: 5.3A Drain to Source Voltage (Vdss): 40V Power - Max: 1.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 5251 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC4050SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Polarisation: unipolar
Kind of transistor: complementary pair
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SO8
Drain-source voltage: 40/-40V
Drain current: 5.8/-5.5A
On-state resistance: 45/45mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Polarisation: unipolar
Kind of transistor: complementary pair
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SO8
Drain-source voltage: 40/-40V
Drain current: 5.8/-5.5A
On-state resistance: 45/45mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 79+ | 0.9 EUR |
| DMC4050SSD-13 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS
MOSFETs MOSFET BVDSS
auf Bestellung 3338 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.59 EUR |
| 10+ | 1 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.43 EUR |
| DMC4050SSD-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 40V 5.3A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 37.56nC @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1790.8pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 40V 5.3A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 37.56nC @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1790.8pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 5251 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.6 EUR |
| 18+ | 1 EUR |
| 100+ | 0.66 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.46 EUR |