| Anzahl | Privatkunde |
|---|---|
| 455+ | 0.38 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.35 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMC4050SSD-13 Diodes Zetex
Description: DIODES INC. - DMC4050SSD-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 40 V, 40 V, 5.3 A, 5.3 A, 0.02 ohm, tariffCode: 85411000, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 5.3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 40V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 5.3A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.02ohm, Verlustleistung, p-Kanal: 1.8W, Drain-Source-Spannung Vds, n-Kanal: 40V, euEccn: NLR, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.02ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: Komplementärer n- und p-Kanal, Verlustleistung, n-Kanal: 1.8W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (23-Jan-2024).
Weitere Produktangebote DMC4050SSD-13 nach Preis ab 0.38 EUR bis 2.23 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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DMC4050SSD-13 | Diodes Zetex |
Trans MOSFET N/P-CH 40V 5.3A 8-Pin SO T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC4050SSD-13 | Diodes Zetex |
Trans MOSFET N/P-CH 40V 5.3A 8-Pin SO T/R |
auf Bestellung 177500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC4050SSD-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 40V 5.3A 8SOPart Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1.8V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 37.56nC @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1790.8pF @ 20V Current - Continuous Drain (Id) @ 25°C: 5.3A Drain to Source Voltage (Vdss): 40V Power - Max: 1.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC4050SSD-13 | DIODES INC. |
Description: DIODES INC. - DMC4050SSD-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 40 V, 40 V, 5.3 A, 5.3 A, 0.02 ohmtariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 5.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5.3A Drain-Source-Durchgangswiderstand, p-Kanal: 0.02ohm Verlustleistung, p-Kanal: 1.8W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.02ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 1.8W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 2320 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC4050SSD-13 | DIODES INC. |
Description: DIODES INC. - DMC4050SSD-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 40 V, 40 V, 5.3 A, 5.3 A, 0.02 ohmtariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 5.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5.3A Drain-Source-Durchgangswiderstand, p-Kanal: 0.02ohm Verlustleistung, p-Kanal: 1.8W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.02ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 1.8W Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 2050 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC4050SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Polarisation: unipolar Kind of transistor: complementary pair Kind of channel: enhancement Mounting: SMD Type of transistor: N/P-MOSFET Case: SO8 Drain-source voltage: 40/-40V Drain current: 5.8/-5.5A On-state resistance: 45/45mΩ Power dissipation: 1.8W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC4050SSD-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 40V 5.3A 8SOPart Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1.8V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 37.56nC @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1790.8pF @ 20V Current - Continuous Drain (Id) @ 25°C: 5.3A Drain to Source Voltage (Vdss): 40V Power - Max: 1.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 5251 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC4050SSD-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS |
auf Bestellung 1171 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMC4050SSD-13 |
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Hersteller: Diodes Zetex
Trans MOSFET N/P-CH 40V 5.3A 8-Pin SO T/R
Trans MOSFET N/P-CH 40V 5.3A 8-Pin SO T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 455+ | 0.38 EUR |
| DMC4050SSD-13 |
![]() |
Hersteller: Diodes Zetex
Trans MOSFET N/P-CH 40V 5.3A 8-Pin SO T/R
Trans MOSFET N/P-CH 40V 5.3A 8-Pin SO T/R
auf Bestellung 177500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.38 EUR |
| DMC4050SSD-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 40V 5.3A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 37.56nC @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1790.8pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 40V 5.3A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 37.56nC @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1790.8pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.46 EUR |
| 5000+ | 0.43 EUR |
| DMC4050SSD-13 |
![]() |
Hersteller: DIODES INC.
Description: DIODES INC. - DMC4050SSD-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 40 V, 40 V, 5.3 A, 5.3 A, 0.02 ohm
tariffCode: 85411000
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 5.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 40V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 5.3A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.02ohm
Verlustleistung, p-Kanal: 1.8W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.02ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 1.8W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (23-Jan-2024)
Description: DIODES INC. - DMC4050SSD-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 40 V, 40 V, 5.3 A, 5.3 A, 0.02 ohm
tariffCode: 85411000
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 5.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 40V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 5.3A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.02ohm
Verlustleistung, p-Kanal: 1.8W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.02ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 1.8W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 2320 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 204+ | 1.23 EUR |
| 235+ | 0.99 EUR |
| 343+ | 0.63 EUR |
| 500+ | 0.55 EUR |
| DMC4050SSD-13 |
![]() |
Hersteller: DIODES INC.
Description: DIODES INC. - DMC4050SSD-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 40 V, 40 V, 5.3 A, 5.3 A, 0.02 ohm
tariffCode: 85411000
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 5.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 40V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 5.3A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.02ohm
Verlustleistung, p-Kanal: 1.8W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.02ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 1.8W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (15-Jan-2018)
Description: DIODES INC. - DMC4050SSD-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 40 V, 40 V, 5.3 A, 5.3 A, 0.02 ohm
tariffCode: 85411000
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 5.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 40V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 5.3A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.02ohm
Verlustleistung, p-Kanal: 1.8W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.02ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 1.8W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (15-Jan-2018)
auf Bestellung 2050 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 191+ | 1.31 EUR |
| 194+ | 1.2 EUR |
| 293+ | 0.74 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.57 EUR |
| DMC4050SSD-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Polarisation: unipolar
Kind of transistor: complementary pair
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SO8
Drain-source voltage: 40/-40V
Drain current: 5.8/-5.5A
On-state resistance: 45/45mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Polarisation: unipolar
Kind of transistor: complementary pair
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SO8
Drain-source voltage: 40/-40V
Drain current: 5.8/-5.5A
On-state resistance: 45/45mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 60+ | 1.43 EUR |
| 79+ | 1.07 EUR |
| DMC4050SSD-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 40V 5.3A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 37.56nC @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1790.8pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 40V 5.3A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 37.56nC @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1790.8pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 5251 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.9 EUR |
| 18+ | 1.19 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.55 EUR |
| DMC4050SSD-13 |
![]() |
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS
MOSFETs MOSFET BVDSS
auf Bestellung 1171 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.23 EUR |
| 10+ | 1.39 EUR |
| 100+ | 1.01 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.69 EUR |
| 2500+ | 0.57 EUR |






