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DMMT3904WQ-7-F DMMT3904WQ-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD99E30BF93D6B00D3&compId=DMMT3904WQ.pdf?ci_sign=bb88143ca8fdbe759579258bfdbcbf45bf096609 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Current gain: 30...300
Quantity in set/package: 3000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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PAM8304AYR DIODES INCORPORATED PAM8304.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1
Operating temperature: -40...85°C
Output power: 3W
Voltage supply range: 2.8...6V DC
Kind of package: reel; tape
Amplifier class: D
Integrated circuit features: low noise; thermal protection
Case: U-DFN3030-8
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
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1SMB5955B-13 DIODES INCORPORATED ds32125.pdf Category: SMD Zener diodes
Description: Diode: Zener; 3W; 180V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 180V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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SMCJ5.0CA-13-F SMCJ5.0CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; bidirectional; SMC; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Peak pulse power dissipation: 1.5kW
Features of semiconductor devices: glass passivated
Case: SMC
auf Bestellung 809 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
159+0.45 EUR
169+0.42 EUR
221+0.32 EUR
Mindestbestellmenge: 148
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DMP6023LFG-7 DIODES INCORPORATED DMP6023LFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -55A
Drain-source voltage: -60V
Drain current: -8.2A
Gate charge: 53.1nC
On-state resistance: 33mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP6023LFGQ-13 DIODES INCORPORATED DMP6023LFGQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -55A
Drain-source voltage: -60V
Drain current: -8.2A
Gate charge: 53.1nC
On-state resistance: 33mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
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DMP6023LFGQ-7 DIODES INCORPORATED DMP6023LFGQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W
Mounting: SMD
Case: PowerDI®3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -55A
Drain-source voltage: -60V
Drain current: -6.2A
On-state resistance: 25mΩ
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
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74HCT32S14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25FCC0D3&compId=74HCT32.pdf?ci_sign=cf85805f3d70eab07958b051c3cc359e179a14c5 Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: HCT
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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74HCT32T14-13 DIODES INCORPORATED 74HCT32.pdf Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.13 EUR
Mindestbestellmenge: 2500
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74HCT08S14-13 74HCT08S14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70D9D4B6540D3&compId=74HCT08.pdf?ci_sign=79ca381c05d927ddebac96128a7bedae1f32db24 Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Case: SO14
Family: HCT
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of inputs: 2
Kind of gate: AND
Supply voltage: 4.5...5.5V DC
Technology: CMOS; TTL
auf Bestellung 574 Stücke:
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114+0.63 EUR
189+0.38 EUR
233+0.31 EUR
315+0.23 EUR
379+0.19 EUR
Mindestbestellmenge: 114
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74HCT08T14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25F5C0D3&compId=74HCT08.pdf?ci_sign=7b2221fed63b623caffb82245b5cf0c4171ea839 Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Case: TSSOP14
Family: HCT
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of inputs: 2
Kind of gate: AND
Supply voltage: 4.5...5.5V DC
Technology: CMOS; TTL
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AH3231Q-W-7 DIODES INCORPORATED AH3231Q-AH3234Q_AH3270Q-AH3272Q.pdf Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
auf Bestellung 3000 Stücke:
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3000+0.43 EUR
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AH3232Q-W-7 DIODES INCORPORATED AH3231Q-AH3234Q_AH3270Q-AH3272Q.pdf Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
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Lieferzeit 14-21 Tag (e)
3000+0.43 EUR
Mindestbestellmenge: 3000
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AH3242Q-W-7 DIODES INCORPORATED AH324xQ_AH328xQ.pdf Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.43 EUR
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AH3270Q-W-7 DIODES INCORPORATED AH3231Q-AH3234Q_AH3270Q-AH3272Q.pdf Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
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3000+0.58 EUR
Mindestbestellmenge: 3000
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AH3280Q-W-7 DIODES INCORPORATED AH324xQ_AH328xQ.pdf Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.7 EUR
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AH3281Q-W-7 DIODES INCORPORATED AH324xQ_AH328xQ.pdf Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.7 EUR
Mindestbestellmenge: 3000
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MJD340-13 DIODES INCORPORATED ds31609.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK,TO252
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.5A
Pulsed collector current: 0.75A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Quantity in set/package: 2500pcs.
Frequency: 10MHz
Case: DPAK; TO252
Polarisation: bipolar
Produkt ist nicht verfügbar
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MMSZ5246BQ-7-F MMSZ5246BQ-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE88DFC0B7EB22D33D1&compId=mmsz52xxb_Ser.pdf?ci_sign=7464a06bb8ae1d47c66b7ebbcaa1f968dc0d9eaa Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
auf Bestellung 8920 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
863+0.083 EUR
1042+0.069 EUR
1839+0.039 EUR
3000+0.032 EUR
Mindestbestellmenge: 625
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MMSZ5246BS-7-F MMSZ5246BS-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE88DFC255BC912F3D1&compId=mmsz52xxbs_ser.pdf?ci_sign=218b9115e55264e4f4c937414324349184fc03e4 Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 16V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 255 Stücke:
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255+0.29 EUR
Mindestbestellmenge: 255
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MMSZ5246BQ-13-F MMSZ5246BQ-13-F DIODES INCORPORATED ds18010.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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MMSZ5250B-7-F MMSZ5250B-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE88DFC0B7EB22D33D1&compId=mmsz52xxb_Ser.pdf?ci_sign=7464a06bb8ae1d47c66b7ebbcaa1f968dc0d9eaa Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 20V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Tolerance: ±5%
Zener voltage: 20V
Kind of package: reel; tape
auf Bestellung 2161 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
807+0.089 EUR
971+0.074 EUR
1534+0.047 EUR
Mindestbestellmenge: 625
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US1MDFQ-13 DIODES INCORPORATED US1JDFQ_US1MDFQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; D-FLAT; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Capacitance: 10pF
Case: D-FLAT
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
338+0.21 EUR
365+0.2 EUR
486+0.15 EUR
610+0.12 EUR
1000+0.11 EUR
2000+0.096 EUR
2500+0.093 EUR
5000+0.087 EUR
Mindestbestellmenge: 278
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GBU610 GBU610 DIODES INCORPORATED GBU6_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 120 Stücke:
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38+1.9 EUR
57+1.26 EUR
64+1.13 EUR
100+0.88 EUR
Mindestbestellmenge: 38
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BCR421UFD-7 DIODES INCORPORATED BCR420UFD-BCR421UFD.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: U-DFN2020-6
Output current: 10...350mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 1.4...40V DC
Kind of package: reel; tape
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BCR420UFDQ-7 DIODES INCORPORATED BCR420UFDQ-BCR421UFDQ.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Application: automotive industry
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Operating temperature: -55...150°C
Output current: 10...350mA
Number of channels: 1
Operating voltage: 1.4...40V DC
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: U-DFN2020-6
Type of integrated circuit: driver
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BCR420UFD-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE988DF64145191B8BF&compId=BCR420UFD.pdf?ci_sign=88c05e1954de3912d4079d69798af1b9f7d27684 Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Operating temperature: -55...150°C
Output current: 10...350mA
Number of channels: 1
Operating voltage: 1.4...40V DC
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: U-DFN2020-6
Type of integrated circuit: driver
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BCR421UFDQ-7 DIODES INCORPORATED BCR420UFDQ-BCR421UFDQ.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: U-DFN2020-6
Output current: 10...350mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...150°C
Application: automotive industry
Operating voltage: 1.4...40V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMCJ58A-13-F SMCJ58A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ58AQ-13-F DIODES INCORPORATED Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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MMBD4448W-7-F MMBD4448W-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1FD0AEE2E692A8DAE0E2&compId=MMBD4448W.pdf?ci_sign=358c4c91623a2819e53ecc2a80c84caa424fa97b Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.5A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Features of semiconductor devices: small signal
auf Bestellung 4775 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
705+0.1 EUR
1069+0.067 EUR
1458+0.049 EUR
1662+0.043 EUR
3000+0.035 EUR
Mindestbestellmenge: 625
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MMBD4448-7-F MMBD4448-7-F DIODES INCORPORATED MMBD4448.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.5A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Features of semiconductor devices: small signal
auf Bestellung 1036 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
981+0.073 EUR
1036+0.069 EUR
Mindestbestellmenge: 625
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MMBD4448HTS-7-F MMBD4448HTS-7-F DIODES INCORPORATED ds30263.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.5A; 4ns; SOT523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Features of semiconductor devices: small signal
auf Bestellung 616 Stücke:
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616+0.12 EUR
Mindestbestellmenge: 616
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MMBD4448DW-7-F MMBD4448DW-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE98582134085E658BF&compId=MMBD4448DW.pdf?ci_sign=0096c3e3dd2fea235042f14bc5006fc36cc85f64 Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.25A; 4ns; SOT363; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: double independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Capacitance: 4pF
Max. load current: 0.5A
Max. forward impulse current: 4A
Features of semiconductor devices: small signal
auf Bestellung 532 Stücke:
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385+0.19 EUR
532+0.13 EUR
Mindestbestellmenge: 385
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MMBD4448HCQW-7-F MMBD4448HCQW-7-F DIODES INCORPORATED MMBD4448HCQW_AQW_ADW_CDW_SDW_TW.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.5A; 4ns; SOT353; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; quadruple
Case: SOT353
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
auf Bestellung 2155 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
228+0.31 EUR
300+0.24 EUR
500+0.19 EUR
1000+0.17 EUR
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DMN3033LSN-7 DMN3033LSN-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C96C3E7BCDD8BF&compId=DMN3033LSN.pdf?ci_sign=9e4635916e6ae54c16f8302a149f284d14897fdb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.4W; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.4W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3021LFDF-7 DIODES INCORPORATED DMN3021LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.4A; Idm: 50A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.4A
Pulsed drain current: 50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3025LFDF-7 DIODES INCORPORATED DMN3025LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.9A; Idm: 40A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.9A
Pulsed drain current: 40A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 13.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3025LFV-13 DIODES INCORPORATED DMN3025LFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 55A; 2.2W
On-state resistance: 30mΩ
Power dissipation: 2.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: 55A
Drain current: 20A
Drain-source voltage: 30V
Gate charge: 9.8nC
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DMN3009SFG-7 DIODES INCORPORATED DMN3009SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 1.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3020UFDF-7 DIODES INCORPORATED DMN3020UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; Idm: 40A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Pulsed drain current: 40A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN32D2LDF-7 DMN32D2LDF-7 DIODES INCORPORATED ds31238.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.28W
Case: SOT353
Gate-source voltage: ±10V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Semiconductor structure: common source
Version: ESD
auf Bestellung 1647 Stücke:
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173+0.41 EUR
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347+0.21 EUR
412+0.17 EUR
596+0.12 EUR
1000+0.1 EUR
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SMBJ36CA-13-F DIODES INCORPORATED ds19002.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMBJ36CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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APX803L20-35C3-7 APX803L20-35C3-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5EE2B7AAEDCA0D2&compId=APX803L.pdf?ci_sign=e4a052770234574778d7f4331510a354344c4793 Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT323
Case: SOT323
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 220ms
Supply voltage: 0.9...5.5V DC
Number of channels: 1
Threshold on-voltage: 3.5V
Integrated circuit features: ±1,5% accuracy
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APX803L20-35SA-7 DIODES INCORPORATED APX803L.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Case: SOT23
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 220ms
Supply voltage: 0.9...5.5V DC
Number of channels: 1
Threshold on-voltage: 3.5V
Integrated circuit features: ±1,5% accuracy
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ZDT1049TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD86A7FB9FDC9120D2&compId=ZDT1049.pdf?ci_sign=cfa904c9b1ffb23173418b428699094cd2a56647 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 5A; 2.75W; SM8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 20A
Current gain: 300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 180MHz
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BZT52HC15WF-7 BZT52HC15WF-7 DIODES INCORPORATED BZT52HC2V4WF%20-%20BZT52HC47WF.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.83W; 15V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.83W
Zener voltage: 15V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 50nA
auf Bestellung 1915 Stücke:
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715+0.1 EUR
834+0.086 EUR
962+0.074 EUR
1137+0.063 EUR
1673+0.043 EUR
1915+0.037 EUR
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BZT52HC30WF-7 BZT52HC30WF-7 DIODES INCORPORATED BZT52HC2V4WF%20-%20BZT52HC47WF.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.83W; 30V; SMD; reel,tape; SOD123F; single diode
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 50nA
Power dissipation: 0.83W
Zener voltage: 30V
Kind of package: reel; tape
Case: SOD123F
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SMBJ33CA-13-F SMBJ33CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1556 Stücke:
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313+0.23 EUR
374+0.19 EUR
410+0.17 EUR
569+0.13 EUR
676+0.11 EUR
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SMBJ33CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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SMAJ200A-13-F SMAJ200A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ200AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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DZDH0401DW-7 DIODES INCORPORATED DZDH0401DW.pdf Category: Drivers - integrated circuits
Description: IC: driver; ideal diode; SOT363
Type of integrated circuit: driver
Kind of integrated circuit: ideal diode
Case: SOT363
Mounting: SMD
Operating temperature: -65...150°C
Kind of package: reel; tape
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FMMT614TA FMMT614TA DIODES INCORPORATED FMMT614.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Case: SOT23
Collector current: 0.5A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Quantity in set/package: 3000pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
auf Bestellung 2704 Stücke:
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105+0.69 EUR
157+0.46 EUR
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271+0.26 EUR
295+0.24 EUR
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1000+0.18 EUR
1500+0.17 EUR
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B260S1F-7 B260S1F-7 DIODES INCORPORATED B260S1F.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 75pF
Kind of package: reel; tape
Max. forward impulse current: 50A
Case: SOD123F
Max. forward voltage: 0.65V
Leakage current: 14mA
auf Bestellung 2493 Stücke:
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313+0.23 EUR
459+0.16 EUR
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DMP1011LFV-13 DIODES INCORPORATED DMP1011LFV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Polarisation: unipolar
Pulsed drain current: -70A
Drain-source voltage: -12V
Drain current: -10A
Gate charge: 9.5nC
On-state resistance: 18.6mΩ
Power dissipation: 2.16W
Gate-source voltage: ±6V
Kind of channel: enhancement
Type of transistor: P-MOSFET
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AP2502KTR-G1 AP2502KTR-G1 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1FD08DF7CA402A33A0DE&compId=AP2502.pdf?ci_sign=ba1c9fb7d9b67e4710e3278d0febdac30533fa48 Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC switcher,LED driver; Uin: 2÷6VDC; TSOT23-6
Input voltage: 2...6V DC
Case: TSOT23-6
Mounting: SMD
Operating temperature: -40...85°C
Kind of integrated circuit: DC/DC switcher; LED driver
Number of channels: 4
Kind of package: reel; tape
Frequency: 150kHz
Type of integrated circuit: PMIC
Application: for LED applications
auf Bestellung 1880 Stücke:
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205+0.35 EUR
230+0.31 EUR
265+0.27 EUR
321+0.22 EUR
355+0.2 EUR
500+0.19 EUR
1000+0.18 EUR
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DMHT3006LFJ-13 DIODES INCORPORATED DMHT3006LFJ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 80A; 2.1W
Mounting: SMD
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: V-DFN5045-12
Gate charge: 17nC
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KBP005G KBP005G DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8E613AAA733D7&compId=KBP005G_ser.pdf?ci_sign=471abe1c817507136ba76f3ade949bcde4486439 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1.5A; Ifsm: 40A
Version: flat
Leads: flat pin
Features of semiconductor devices: glass passivated
Case: KBP
Electrical mounting: THT
Type of bridge rectifier: single-phase
Kind of package: tube
Max. forward voltage: 1.1V
Load current: 1.5A
Max. forward impulse current: 40A
Max. off-state voltage: 50V
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DMMT3904WQ-7-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDD99E30BF93D6B00D3&compId=DMMT3904WQ.pdf?ci_sign=bb88143ca8fdbe759579258bfdbcbf45bf096609
DMMT3904WQ-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Current gain: 30...300
Quantity in set/package: 3000pcs.
Application: automotive industry
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PAM8304AYR PAM8304.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1
Operating temperature: -40...85°C
Output power: 3W
Voltage supply range: 2.8...6V DC
Kind of package: reel; tape
Amplifier class: D
Integrated circuit features: low noise; thermal protection
Case: U-DFN3030-8
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
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1SMB5955B-13 ds32125.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 180V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 180V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
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SMCJ5.0CA-13-F SMCJ_ser.pdf
SMCJ5.0CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; bidirectional; SMC; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Peak pulse power dissipation: 1.5kW
Features of semiconductor devices: glass passivated
Case: SMC
auf Bestellung 809 Stücke:
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Anzahl Preis
148+0.49 EUR
159+0.45 EUR
169+0.42 EUR
221+0.32 EUR
Mindestbestellmenge: 148
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DMP6023LFG-7 DMP6023LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -55A
Drain-source voltage: -60V
Drain current: -8.2A
Gate charge: 53.1nC
On-state resistance: 33mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP6023LFGQ-13 DMP6023LFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -55A
Drain-source voltage: -60V
Drain current: -8.2A
Gate charge: 53.1nC
On-state resistance: 33mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
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DMP6023LFGQ-7 DMP6023LFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W
Mounting: SMD
Case: PowerDI®3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -55A
Drain-source voltage: -60V
Drain current: -6.2A
On-state resistance: 25mΩ
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
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74HCT32S14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25FCC0D3&compId=74HCT32.pdf?ci_sign=cf85805f3d70eab07958b051c3cc359e179a14c5
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: HCT
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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74HCT32T14-13 74HCT32.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.13 EUR
Mindestbestellmenge: 2500
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74HCT08S14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70D9D4B6540D3&compId=74HCT08.pdf?ci_sign=79ca381c05d927ddebac96128a7bedae1f32db24
74HCT08S14-13
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Case: SO14
Family: HCT
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of inputs: 2
Kind of gate: AND
Supply voltage: 4.5...5.5V DC
Technology: CMOS; TTL
auf Bestellung 574 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
189+0.38 EUR
233+0.31 EUR
315+0.23 EUR
379+0.19 EUR
Mindestbestellmenge: 114
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74HCT08T14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25F5C0D3&compId=74HCT08.pdf?ci_sign=7b2221fed63b623caffb82245b5cf0c4171ea839
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Case: TSSOP14
Family: HCT
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of inputs: 2
Kind of gate: AND
Supply voltage: 4.5...5.5V DC
Technology: CMOS; TTL
Produkt ist nicht verfügbar
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AH3231Q-W-7 AH3231Q-AH3234Q_AH3270Q-AH3272Q.pdf
Hersteller: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.43 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AH3232Q-W-7 AH3231Q-AH3234Q_AH3270Q-AH3272Q.pdf
Hersteller: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.43 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AH3242Q-W-7 AH324xQ_AH328xQ.pdf
Hersteller: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.43 EUR
Mindestbestellmenge: 3000
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AH3270Q-W-7 AH3231Q-AH3234Q_AH3270Q-AH3272Q.pdf
Hersteller: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.58 EUR
Mindestbestellmenge: 3000
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AH3280Q-W-7 AH324xQ_AH328xQ.pdf
Hersteller: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.7 EUR
Mindestbestellmenge: 3000
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AH3281Q-W-7 AH324xQ_AH328xQ.pdf
Hersteller: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.7 EUR
Mindestbestellmenge: 3000
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MJD340-13 ds31609.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK,TO252
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.5A
Pulsed collector current: 0.75A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Quantity in set/package: 2500pcs.
Frequency: 10MHz
Case: DPAK; TO252
Polarisation: bipolar
Produkt ist nicht verfügbar
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MMSZ5246BQ-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE88DFC0B7EB22D33D1&compId=mmsz52xxb_Ser.pdf?ci_sign=7464a06bb8ae1d47c66b7ebbcaa1f968dc0d9eaa
MMSZ5246BQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
auf Bestellung 8920 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
863+0.083 EUR
1042+0.069 EUR
1839+0.039 EUR
3000+0.032 EUR
Mindestbestellmenge: 625
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MMSZ5246BS-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE88DFC255BC912F3D1&compId=mmsz52xxbs_ser.pdf?ci_sign=218b9115e55264e4f4c937414324349184fc03e4
MMSZ5246BS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 16V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
255+0.29 EUR
Mindestbestellmenge: 255
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MMSZ5246BQ-13-F ds18010.pdf
MMSZ5246BQ-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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MMSZ5250B-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE88DFC0B7EB22D33D1&compId=mmsz52xxb_Ser.pdf?ci_sign=7464a06bb8ae1d47c66b7ebbcaa1f968dc0d9eaa
MMSZ5250B-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 20V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Tolerance: ±5%
Zener voltage: 20V
Kind of package: reel; tape
auf Bestellung 2161 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
807+0.089 EUR
971+0.074 EUR
1534+0.047 EUR
Mindestbestellmenge: 625
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US1MDFQ-13 US1JDFQ_US1MDFQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; D-FLAT; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Capacitance: 10pF
Case: D-FLAT
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
338+0.21 EUR
365+0.2 EUR
486+0.15 EUR
610+0.12 EUR
1000+0.11 EUR
2000+0.096 EUR
2500+0.093 EUR
5000+0.087 EUR
Mindestbestellmenge: 278
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GBU610 GBU6_ser.pdf
GBU610
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.9 EUR
57+1.26 EUR
64+1.13 EUR
100+0.88 EUR
Mindestbestellmenge: 38
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BCR421UFD-7 BCR420UFD-BCR421UFD.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: U-DFN2020-6
Output current: 10...350mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 1.4...40V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BCR420UFDQ-7 BCR420UFDQ-BCR421UFDQ.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Application: automotive industry
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Operating temperature: -55...150°C
Output current: 10...350mA
Number of channels: 1
Operating voltage: 1.4...40V DC
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: U-DFN2020-6
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR420UFD-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE988DF64145191B8BF&compId=BCR420UFD.pdf?ci_sign=88c05e1954de3912d4079d69798af1b9f7d27684
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Operating temperature: -55...150°C
Output current: 10...350mA
Number of channels: 1
Operating voltage: 1.4...40V DC
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: U-DFN2020-6
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR421UFDQ-7 BCR420UFDQ-BCR421UFDQ.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: U-DFN2020-6
Output current: 10...350mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...150°C
Application: automotive industry
Operating voltage: 1.4...40V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ58A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ58A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMCJ58AQ-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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MMBD4448W-7-F pVersion=0046&contRep=ZT&docId=005056AB281E1FD0AEE2E692A8DAE0E2&compId=MMBD4448W.pdf?ci_sign=358c4c91623a2819e53ecc2a80c84caa424fa97b
MMBD4448W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.5A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Features of semiconductor devices: small signal
auf Bestellung 4775 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
705+0.1 EUR
1069+0.067 EUR
1458+0.049 EUR
1662+0.043 EUR
3000+0.035 EUR
Mindestbestellmenge: 625
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MMBD4448-7-F MMBD4448.pdf
MMBD4448-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.5A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Features of semiconductor devices: small signal
auf Bestellung 1036 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
981+0.073 EUR
1036+0.069 EUR
Mindestbestellmenge: 625
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MMBD4448HTS-7-F ds30263.pdf
MMBD4448HTS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.5A; 4ns; SOT523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Features of semiconductor devices: small signal
auf Bestellung 616 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
616+0.12 EUR
Mindestbestellmenge: 616
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MMBD4448DW-7-F pVersion=0046&contRep=ZT&docId=005056AB82531EE98582134085E658BF&compId=MMBD4448DW.pdf?ci_sign=0096c3e3dd2fea235042f14bc5006fc36cc85f64
MMBD4448DW-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.25A; 4ns; SOT363; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: double independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Capacitance: 4pF
Max. load current: 0.5A
Max. forward impulse current: 4A
Features of semiconductor devices: small signal
auf Bestellung 532 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
532+0.13 EUR
Mindestbestellmenge: 385
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MMBD4448HCQW-7-F MMBD4448HCQW_AQW_ADW_CDW_SDW_TW.pdf
MMBD4448HCQW-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.5A; 4ns; SOT353; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; quadruple
Case: SOT353
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
auf Bestellung 2155 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
228+0.31 EUR
300+0.24 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 157
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DMN3033LSN-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C96C3E7BCDD8BF&compId=DMN3033LSN.pdf?ci_sign=9e4635916e6ae54c16f8302a149f284d14897fdb
DMN3033LSN-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.4W; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.4W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 1715 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
146+0.49 EUR
168+0.43 EUR
280+0.26 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 117
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DMN3021LFDF-7 DMN3021LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.4A; Idm: 50A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.4A
Pulsed drain current: 50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN3025LFDF-7 DMN3025LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.9A; Idm: 40A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.9A
Pulsed drain current: 40A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 13.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN3025LFV-13 DMN3025LFV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 55A; 2.2W
On-state resistance: 30mΩ
Power dissipation: 2.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: 55A
Drain current: 20A
Drain-source voltage: 30V
Gate charge: 9.8nC
Produkt ist nicht verfügbar
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DMN3009SFG-7 DMN3009SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 1.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN3020UFDF-7 DMN3020UFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; Idm: 40A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Pulsed drain current: 40A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN32D2LDF-7 ds31238.pdf
DMN32D2LDF-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.28W
Case: SOT353
Gate-source voltage: ±10V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Semiconductor structure: common source
Version: ESD
auf Bestellung 1647 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
236+0.3 EUR
347+0.21 EUR
412+0.17 EUR
596+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 173
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SMBJ36CA-13-F ds19002.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMBJ36CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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APX803L20-35C3-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5EE2B7AAEDCA0D2&compId=APX803L.pdf?ci_sign=e4a052770234574778d7f4331510a354344c4793
APX803L20-35C3-7
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT323
Case: SOT323
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 220ms
Supply voltage: 0.9...5.5V DC
Number of channels: 1
Threshold on-voltage: 3.5V
Integrated circuit features: ±1,5% accuracy
Produkt ist nicht verfügbar
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APX803L20-35SA-7 APX803L.pdf
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Case: SOT23
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 220ms
Supply voltage: 0.9...5.5V DC
Number of channels: 1
Threshold on-voltage: 3.5V
Integrated circuit features: ±1,5% accuracy
Produkt ist nicht verfügbar
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ZDT1049TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDD86A7FB9FDC9120D2&compId=ZDT1049.pdf?ci_sign=cfa904c9b1ffb23173418b428699094cd2a56647
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 5A; 2.75W; SM8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 20A
Current gain: 300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 180MHz
Produkt ist nicht verfügbar
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BZT52HC15WF-7 BZT52HC2V4WF%20-%20BZT52HC47WF.pdf
BZT52HC15WF-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.83W; 15V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.83W
Zener voltage: 15V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 50nA
auf Bestellung 1915 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
834+0.086 EUR
962+0.074 EUR
1137+0.063 EUR
1673+0.043 EUR
1915+0.037 EUR
Mindestbestellmenge: 715
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BZT52HC30WF-7 BZT52HC2V4WF%20-%20BZT52HC47WF.pdf
BZT52HC30WF-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.83W; 30V; SMD; reel,tape; SOD123F; single diode
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 50nA
Power dissipation: 0.83W
Zener voltage: 30V
Kind of package: reel; tape
Case: SOD123F
Produkt ist nicht verfügbar
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SMBJ33CA-13-F SMBJ_ser.pdf
SMBJ33CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1556 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
374+0.19 EUR
410+0.17 EUR
569+0.13 EUR
676+0.11 EUR
Mindestbestellmenge: 313
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SMBJ33CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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SMAJ200A-13-F SMAJ_ser.pdf
SMAJ200A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMAJ200AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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DZDH0401DW-7 DZDH0401DW.pdf
Hersteller: DIODES INCORPORATED
Category: Drivers - integrated circuits
Description: IC: driver; ideal diode; SOT363
Type of integrated circuit: driver
Kind of integrated circuit: ideal diode
Case: SOT363
Mounting: SMD
Operating temperature: -65...150°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FMMT614TA FMMT614.pdf
FMMT614TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Case: SOT23
Collector current: 0.5A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Quantity in set/package: 3000pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
auf Bestellung 2704 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
157+0.46 EUR
196+0.37 EUR
271+0.26 EUR
295+0.24 EUR
500+0.2 EUR
1000+0.18 EUR
1500+0.17 EUR
Mindestbestellmenge: 105
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B260S1F-7 B260S1F.pdf
B260S1F-7
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 75pF
Kind of package: reel; tape
Max. forward impulse current: 50A
Case: SOD123F
Max. forward voltage: 0.65V
Leakage current: 14mA
auf Bestellung 2493 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
285+0.25 EUR
313+0.23 EUR
459+0.16 EUR
642+0.11 EUR
1000+0.094 EUR
Mindestbestellmenge: 228
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DMP1011LFV-13 DMP1011LFV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Polarisation: unipolar
Pulsed drain current: -70A
Drain-source voltage: -12V
Drain current: -10A
Gate charge: 9.5nC
On-state resistance: 18.6mΩ
Power dissipation: 2.16W
Gate-source voltage: ±6V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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AP2502KTR-G1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08DF7CA402A33A0DE&compId=AP2502.pdf?ci_sign=ba1c9fb7d9b67e4710e3278d0febdac30533fa48
AP2502KTR-G1
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC switcher,LED driver; Uin: 2÷6VDC; TSOT23-6
Input voltage: 2...6V DC
Case: TSOT23-6
Mounting: SMD
Operating temperature: -40...85°C
Kind of integrated circuit: DC/DC switcher; LED driver
Number of channels: 4
Kind of package: reel; tape
Frequency: 150kHz
Type of integrated circuit: PMIC
Application: for LED applications
auf Bestellung 1880 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
205+0.35 EUR
230+0.31 EUR
265+0.27 EUR
321+0.22 EUR
355+0.2 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 162
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DMHT3006LFJ-13 DMHT3006LFJ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 80A; 2.1W
Mounting: SMD
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: V-DFN5045-12
Gate charge: 17nC
Produkt ist nicht verfügbar
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KBP005G pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8E613AAA733D7&compId=KBP005G_ser.pdf?ci_sign=471abe1c817507136ba76f3ade949bcde4486439
KBP005G
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1.5A; Ifsm: 40A
Version: flat
Leads: flat pin
Features of semiconductor devices: glass passivated
Case: KBP
Electrical mounting: THT
Type of bridge rectifier: single-phase
Kind of package: tube
Max. forward voltage: 1.1V
Load current: 1.5A
Max. forward impulse current: 40A
Max. off-state voltage: 50V
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.75 EUR
Mindestbestellmenge: 26
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