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SD101AWS-7-F SD101AWS-7-F DIODES INCORPORATED SD101AWS-SD101CWS.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 60V; 15mA; 1ns; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15mA
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward voltage: 1V
Max. forward impulse current: 50mA
Reverse recovery time: 1ns
Kind of package: reel; tape
Power dissipation: 0.2W
auf Bestellung 648 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
348+0.21 EUR
385+0.19 EUR
426+0.17 EUR
546+0.13 EUR
648+0.11 EUR
Mindestbestellmenge: 278
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ZXLD1320DCATC DIODES INCORPORATED ZXLD1320.pdf Category: Voltage regulators - DC/DC circuits
Description: ZXLD1320DCATC
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+2.39 EUR
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ZXLD1615QET5TA DIODES INCORPORATED ZXLD1615Q.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.96 EUR
Mindestbestellmenge: 3000
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SMBJ120A-13-F SMBJ120A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷153V; 3.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 3.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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DMC2025UFDB-7 DIODES INCORPORATED DMC2025UFDB.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.14 EUR
Mindestbestellmenge: 3000
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ZXCT199A1DW-7 DIODES INCORPORATED ZXCT199.pdf Category: SMD operational amplifiers
Description: IC: instrumentation amplifier
Type of integrated circuit: instrumentation amplifier
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.25 EUR
Mindestbestellmenge: 3000
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74AHC1G14QW5-7 DIODES INCORPORATED 74AHC1G14Q.pdf Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 3000 Stücke:
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3000+0.077 EUR
Mindestbestellmenge: 3000
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MMBF170-7-F MMBF170-7-F DIODES INCORPORATED MMBF170.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 0.8A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5.3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 8401 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
410+0.17 EUR
585+0.12 EUR
681+0.11 EUR
968+0.074 EUR
1007+0.071 EUR
1124+0.064 EUR
1500+0.058 EUR
3000+0.05 EUR
Mindestbestellmenge: 239
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ZXLD1356QET5TA DIODES INCORPORATED ZXLD1356Q.pdf Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+1.79 EUR
Mindestbestellmenge: 3000
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DSS2540M-7 DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.083 EUR
Mindestbestellmenge: 3000
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ZXGD3003E6QTA DIODES INCORPORATED ZXGD3003E6Q.pdf Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.41 EUR
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ZXGD3004E6QTA DIODES INCORPORATED Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.47 EUR
Mindestbestellmenge: 3000
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ZXMHC10A07N8TC ZXMHC10A07N8TC DIODES INCORPORATED ZXMHC10A07N8.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 0.9/-0.7A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.9/1.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
auf Bestellung 2058 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.23 EUR
70+1.03 EUR
83+0.87 EUR
100+0.8 EUR
500+0.77 EUR
Mindestbestellmenge: 59
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BZT52HC11WF-7 DIODES INCORPORATED BZT52HC2V4WF%20-%20BZT52HC47WF.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.83W; 11V; SMD; reel,tape; SOD123F; single diode
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.83W
Zener voltage: 11V
Produkt ist nicht verfügbar
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74AHC1G32W5-7 74AHC1G32W5-7 DIODES INCORPORATED 74AHC1G32.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SOT25; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of input: with Schmitt trigger
Kind of output: push-pull
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
633+0.11 EUR
727+0.098 EUR
802+0.089 EUR
872+0.082 EUR
957+0.075 EUR
1067+0.067 EUR
Mindestbestellmenge: 385
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FMMT617 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED49EF5618BF5C4B5EA&compId=FMMT617.pdf?ci_sign=1a2b192d78c4d8f4839921e9f8d36b87c3ce8def Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Produkt ist nicht verfügbar
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SMBJ16CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷20.5V; 23.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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SMBJ60CA-13-F SMBJ60CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2575 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
368+0.19 EUR
410+0.17 EUR
589+0.12 EUR
676+0.11 EUR
Mindestbestellmenge: 295
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SMBJ6.0CA-13-F SMBJ6.0CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.67V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
343+0.21 EUR
382+0.19 EUR
538+0.13 EUR
Mindestbestellmenge: 278
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2N7002DWK-7 DIODES INCORPORATED 2N7002DWK.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 261mA; Idm: 1.1A; 450mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 261mA
Power dissipation: 0.45W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.04nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.1A
Produkt ist nicht verfügbar
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2N7002DWQ-7-F 2N7002DWQ-7-F DIODES INCORPORATED 2N7002DW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; Idm: 0.8A; 0.31W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Pulsed drain current: 0.8A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
582+0.12 EUR
649+0.11 EUR
693+0.1 EUR
1000+0.089 EUR
3000+0.083 EUR
Mindestbestellmenge: 455
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2N7002DWS-7 DIODES INCORPORATED 2N7002DWS.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 247mA; Idm: 1.8A; 370mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 247mA
Power dissipation: 0.37W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.8A
Produkt ist nicht verfügbar
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ZXMN6A08KTC DIODES INCORPORATED ZXMN6A08K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BCX5516TA BCX5516TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BD11709F2591BF&compId=BCX54x-DTE.pdf?ci_sign=a6de10d206e214dd6aa6c975b3b2ed6b35926cdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
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SMAJ14A-13-F SMAJ14A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 3107 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
424+0.17 EUR
486+0.15 EUR
910+0.079 EUR
953+0.075 EUR
Mindestbestellmenge: 358
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SMBJ14CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.19 EUR
Mindestbestellmenge: 3000
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BZT52C3V9S-7-F BZT52C3V9S-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED534E388BC6A18&compId=BZT52CxxS_ser.pdf?ci_sign=19b509c5a9084fd233a8e598b6a776ae01cc116a Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 565 Stücke:
Lieferzeit 14-21 Tag (e)
565+0.13 EUR
Mindestbestellmenge: 565
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LMV393M8-13 LMV393M8-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9F4718282001E28&compId=LMV3xx.pdf?ci_sign=b4a18ac5a1f46262c64085b52789b425d42b6e8a Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; MSOP8; reel,tape; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: MSOP8
Operating temperature: -40...125°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 150nA
Voltage supply range: 2.7...5.5V DC
Produkt ist nicht verfügbar
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DDZ12B-7 DDZ12B-7 DIODES INCORPORATED DDZ5V1B-DDZ43.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 3373 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
736+0.097 EUR
1334+0.054 EUR
1713+0.042 EUR
3000+0.037 EUR
Mindestbestellmenge: 500
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ZRB500F01TA ZRB500F01TA DIODES INCORPORATED ZRB500.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±1%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 15mA
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.43 EUR
Mindestbestellmenge: 50
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ZRB500F03TA ZRB500F03TA DIODES INCORPORATED ZRB500F03TA.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±3%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±3%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 15mA
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
72+1 EUR
102+0.71 EUR
111+0.65 EUR
113+0.63 EUR
126+0.57 EUR
Mindestbestellmenge: 72
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DMTH4M70SPGWQ-13 DIODES INCORPORATED DMTH4M70SPGWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+2.37 EUR
Mindestbestellmenge: 2000
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ZVP4525GQTA DIODES INCORPORATED ZVP4525GQ.pdf Category: Transistors - Unclassified
Description: ZVP4525GQTA
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.45 EUR
Mindestbestellmenge: 1000
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SMCJ85CA-13-F SMCJ85CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 94.4÷104V; 10.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 10.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DMN2710UT-13 DIODES INCORPORATED DMN2710UT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.072 EUR
Mindestbestellmenge: 10000
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SMAJ150A-13-F SMAJ150A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 167÷185V; 1.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 1.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2885 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
288+0.25 EUR
334+0.21 EUR
439+0.16 EUR
703+0.1 EUR
966+0.074 EUR
Mindestbestellmenge: 250
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MMSZ5246B-7-F MMSZ5246B-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE88DFC0B7EB22D33D1&compId=mmsz52xxb_Ser.pdf?ci_sign=7464a06bb8ae1d47c66b7ebbcaa1f968dc0d9eaa Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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GBU808-01-LS DIODES INCORPORATED Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
auf Bestellung 860 Stücke:
Lieferzeit 14-21 Tag (e)
320+0.33 EUR
Mindestbestellmenge: 320
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B140-13-F B140-13-F DIODES INCORPORATED b120-160b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Capacitance: 110pF
Max. forward voltage: 0.5V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
auf Bestellung 1347 Stücke:
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481+0.15 EUR
618+0.12 EUR
699+0.1 EUR
969+0.074 EUR
1150+0.062 EUR
1300+0.058 EUR
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GBU606 GBU606 DIODES INCORPORATED GBU6_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Case: GBU
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DMNH6010SCTB-13 DIODES INCORPORATED DMNH6010SCTB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 94A; Idm: 532A; 5W; TO263AB
Mounting: SMD
Case: TO263AB
Polarisation: unipolar
Gate charge: 46nC
On-state resistance: 10mΩ
Power dissipation: 5W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 94A
Pulsed drain current: 532A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
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SMBJ12CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
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DMG2302UK-7
+1
 		DMG2302UK-7 DIODES INCORPORATED DMG2302UK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 0.66W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 949 Stücke:
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313+0.23 EUR
459+0.16 EUR
662+0.11 EUR
772+0.093 EUR
949+0.076 EUR
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DMN2056U-7 DMN2056U-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF3BB87C4EA18BF&compId=DMN2056U.pdf?ci_sign=02858e5a2ae901756f0aa55529d040dd315a3492 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 0.94W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMG2302UKQ-7 DMG2302UKQ-7 DIODES INCORPORATED DMG2302UKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.4nC
Application: automotive industry
Pulsed drain current: 12A
Produkt ist nicht verfügbar
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DMG2302UK-13 DMG2302UK-13 DIODES INCORPORATED DMG2302UK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.4nC
Pulsed drain current: 12A
Produkt ist nicht verfügbar
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DMG2302UKQ-13 DMG2302UKQ-13 DIODES INCORPORATED DMG2302UKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.4nC
Application: automotive industry
Pulsed drain current: 12A
Produkt ist nicht verfügbar
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DMG2302UQ-7 DMG2302UQ-7 DIODES INCORPORATED DMG2302UQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 4.3nC
Application: automotive industry
Pulsed drain current: 25A
Produkt ist nicht verfügbar
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DMN3065LW-7 DMN3065LW-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED90BB128E54A18&compId=DMN3065LW.pdf?ci_sign=64395f49275f7994814ea379c2493f36ffcd24f2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Polarisation: unipolar
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Power dissipation: 0.77W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
auf Bestellung 451 Stücke:
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152+0.47 EUR
229+0.31 EUR
327+0.22 EUR
382+0.19 EUR
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1SMB5929B-13 1SMB5929B-13 DIODES INCORPORATED 1SMB59xxB_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 1321 Stücke:
Lieferzeit 14-21 Tag (e)
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212+0.34 EUR
241+0.3 EUR
376+0.19 EUR
511+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 173
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DMN3042L-7 DMN3042L-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C970B7E97238BF&compId=DMN3042L.pdf?ci_sign=dc29de961bbfa8e5d871beaa03a4027b9ae91cc1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 1050 Stücke:
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334+0.21 EUR
424+0.17 EUR
500+0.14 EUR
747+0.096 EUR
820+0.087 EUR
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SMBJ18A-13-F DIODES INCORPORATED ds19002.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMBJ18AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZX84C6V8Q-7-F BZX84C6V8Q-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835 Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.8V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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S5BC-13-F S5BC-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B983543627B4C143&compId=S5AC_ser.pdf?ci_sign=78a844e5c7496fd8adffaaf94ae8d3c0f76d60d5 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A
Kind of package: reel; tape
Mounting: SMD
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 40pF
Max. forward voltage: 1.15V
Load current: 5A
Max. forward impulse current: 100A
Max. off-state voltage: 100V
Case: SMC
auf Bestellung 1923 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
219+0.33 EUR
274+0.26 EUR
302+0.24 EUR
500+0.19 EUR
700+0.18 EUR
Mindestbestellmenge: 162
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DPBT8105-7 DIODES INCORPORATED ds30514.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 600mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 2A
Current gain: 30...300
Collector-emitter voltage: 60V
Quantity in set/package: 3000pcs.
Polarisation: bipolar
Frequency: 150MHz
Type of transistor: PNP
Produkt ist nicht verfügbar
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BAS21T-7-F DIODES INCORPORATED Ds30264.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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AP7361C-18SP-13 AP7361C-18SP-13 DIODES INCORPORATED AP7361C.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SO8; SMD; ±1%
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 1A
Voltage drop: 0.7V
Output voltage: 1.8V
Input voltage: 2.2...6V
Tolerance: ±1%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7361C
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
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B240AE-13 B240AE-13 DIODES INCORPORATED B220AEBE-B245AEBE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; reel,tape
Case: SMA
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 93pF
Leakage current: 15mA
Max. forward voltage: 0.5V
Load current: 2A
Max. off-state voltage: 40V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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B240AQ-13-F B240AQ-13-F DIODES INCORPORATED B220_A-B260_A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; reel,tape
Application: automotive industry
Case: SMA
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 200pF
Leakage current: 20mA
Max. forward voltage: 0.5V
Load current: 2A
Max. off-state voltage: 40V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SD101AWS-7-F SD101AWS-SD101CWS.pdf
SD101AWS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 60V; 15mA; 1ns; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15mA
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward voltage: 1V
Max. forward impulse current: 50mA
Reverse recovery time: 1ns
Kind of package: reel; tape
Power dissipation: 0.2W
auf Bestellung 648 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
348+0.21 EUR
385+0.19 EUR
426+0.17 EUR
546+0.13 EUR
648+0.11 EUR
Mindestbestellmenge: 278
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ZXLD1320DCATC ZXLD1320.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: ZXLD1320DCATC
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+2.39 EUR
Mindestbestellmenge: 3000
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ZXLD1615QET5TA ZXLD1615Q.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.96 EUR
Mindestbestellmenge: 3000
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SMBJ120A-13-F SMBJ_ser.pdf
SMBJ120A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷153V; 3.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 3.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMC2025UFDB-7 DMC2025UFDB.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.14 EUR
Mindestbestellmenge: 3000
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ZXCT199A1DW-7 ZXCT199.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier
Type of integrated circuit: instrumentation amplifier
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.25 EUR
Mindestbestellmenge: 3000
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74AHC1G14QW5-7 74AHC1G14Q.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.077 EUR
Mindestbestellmenge: 3000
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MMBF170-7-F MMBF170.pdf
MMBF170-7-F
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 0.8A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5.3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 8401 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
410+0.17 EUR
585+0.12 EUR
681+0.11 EUR
968+0.074 EUR
1007+0.071 EUR
1124+0.064 EUR
1500+0.058 EUR
3000+0.05 EUR
Mindestbestellmenge: 239
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ZXLD1356QET5TA ZXLD1356Q.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+1.79 EUR
Mindestbestellmenge: 3000
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DSS2540M-7
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.083 EUR
Mindestbestellmenge: 3000
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ZXGD3003E6QTA ZXGD3003E6Q.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.41 EUR
Mindestbestellmenge: 3000
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ZXGD3004E6QTA
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.47 EUR
Mindestbestellmenge: 3000
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ZXMHC10A07N8TC ZXMHC10A07N8.pdf
ZXMHC10A07N8TC
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 0.9/-0.7A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.9/1.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
auf Bestellung 2058 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.23 EUR
70+1.03 EUR
83+0.87 EUR
100+0.8 EUR
500+0.77 EUR
Mindestbestellmenge: 59
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BZT52HC11WF-7 BZT52HC2V4WF%20-%20BZT52HC47WF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.83W; 11V; SMD; reel,tape; SOD123F; single diode
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.83W
Zener voltage: 11V
Produkt ist nicht verfügbar
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74AHC1G32W5-7 74AHC1G32.pdf
74AHC1G32W5-7
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SOT25; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of input: with Schmitt trigger
Kind of output: push-pull
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
633+0.11 EUR
727+0.098 EUR
802+0.089 EUR
872+0.082 EUR
957+0.075 EUR
1067+0.067 EUR
Mindestbestellmenge: 385
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FMMT617 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49EF5618BF5C4B5EA&compId=FMMT617.pdf?ci_sign=1a2b192d78c4d8f4839921e9f8d36b87c3ce8def
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Produkt ist nicht verfügbar
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SMBJ16CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷20.5V; 23.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ60CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ60CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2575 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
368+0.19 EUR
410+0.17 EUR
589+0.12 EUR
676+0.11 EUR
Mindestbestellmenge: 295
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SMBJ6.0CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ6.0CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.67V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
343+0.21 EUR
382+0.19 EUR
538+0.13 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
2N7002DWK-7 2N7002DWK.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 261mA; Idm: 1.1A; 450mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 261mA
Power dissipation: 0.45W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.04nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N7002DWQ-7-F 2N7002DW.pdf
2N7002DWQ-7-F
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; Idm: 0.8A; 0.31W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Pulsed drain current: 0.8A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
582+0.12 EUR
649+0.11 EUR
693+0.1 EUR
1000+0.089 EUR
3000+0.083 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
2N7002DWS-7 2N7002DWS.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 247mA; Idm: 1.8A; 370mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 247mA
Power dissipation: 0.37W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.8A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN6A08KTC ZXMN6A08K.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCX5516TA pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BD11709F2591BF&compId=BCX54x-DTE.pdf?ci_sign=a6de10d206e214dd6aa6c975b3b2ed6b35926cdf
BCX5516TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ14A-13-F SMAJ_ser.pdf
SMAJ14A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 3107 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
424+0.17 EUR
486+0.15 EUR
910+0.079 EUR
953+0.075 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ14CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.19 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C3V9S-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED534E388BC6A18&compId=BZT52CxxS_ser.pdf?ci_sign=19b509c5a9084fd233a8e598b6a776ae01cc116a
BZT52C3V9S-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 565 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
565+0.13 EUR
Mindestbestellmenge: 565
Im Einkaufswagen  Stück im Wert von  UAH
LMV393M8-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9F4718282001E28&compId=LMV3xx.pdf?ci_sign=b4a18ac5a1f46262c64085b52789b425d42b6e8a
LMV393M8-13
Hersteller: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; MSOP8; reel,tape; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: MSOP8
Operating temperature: -40...125°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 150nA
Voltage supply range: 2.7...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DDZ12B-7 DDZ5V1B-DDZ43.pdf
DDZ12B-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 3373 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
736+0.097 EUR
1334+0.054 EUR
1713+0.042 EUR
3000+0.037 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
ZRB500F01TA ZRB500.pdf
ZRB500F01TA
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±1%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 15mA
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
ZRB500F03TA ZRB500F03TA.pdf
ZRB500F03TA
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±3%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±3%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 15mA
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
102+0.71 EUR
111+0.65 EUR
113+0.63 EUR
126+0.57 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
DMTH4M70SPGWQ-13 DMTH4M70SPGWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+2.37 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
ZVP4525GQTA ZVP4525GQ.pdf
Hersteller: DIODES INCORPORATED
Category: Transistors - Unclassified
Description: ZVP4525GQTA
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.45 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ85CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ85CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 94.4÷104V; 10.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 10.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DMN2710UT-13 DMN2710UT.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.072 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ150A-13-F SMAJ_ser.pdf
SMAJ150A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 167÷185V; 1.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 1.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2885 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
288+0.25 EUR
334+0.21 EUR
439+0.16 EUR
703+0.1 EUR
966+0.074 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5246B-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE88DFC0B7EB22D33D1&compId=mmsz52xxb_Ser.pdf?ci_sign=7464a06bb8ae1d47c66b7ebbcaa1f968dc0d9eaa
MMSZ5246B-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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GBU808-01-LS
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
auf Bestellung 860 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
320+0.33 EUR
Mindestbestellmenge: 320
Im Einkaufswagen  Stück im Wert von  UAH
B140-13-F b120-160b.pdf
B140-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Capacitance: 110pF
Max. forward voltage: 0.5V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
auf Bestellung 1347 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
481+0.15 EUR
618+0.12 EUR
699+0.1 EUR
969+0.074 EUR
1150+0.062 EUR
1300+0.058 EUR
Mindestbestellmenge: 358
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GBU606 GBU6_ser.pdf
GBU606
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Case: GBU
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.2 EUR
Mindestbestellmenge: 17
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DMNH6010SCTB-13 DMNH6010SCTB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 94A; Idm: 532A; 5W; TO263AB
Mounting: SMD
Case: TO263AB
Polarisation: unipolar
Gate charge: 46nC
On-state resistance: 10mΩ
Power dissipation: 5W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 94A
Pulsed drain current: 532A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ12CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 135000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.19 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMG2302UK-7 DMG2302UK.pdf
DMG2302UK-7
+1
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 0.66W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 949 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
459+0.16 EUR
662+0.11 EUR
772+0.093 EUR
949+0.076 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
DMN2056U-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF3BB87C4EA18BF&compId=DMN2056U.pdf?ci_sign=02858e5a2ae901756f0aa55529d040dd315a3492
DMN2056U-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 0.94W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.25 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
DMG2302UKQ-7 DMG2302UKQ.pdf
DMG2302UKQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.4nC
Application: automotive industry
Pulsed drain current: 12A
Produkt ist nicht verfügbar
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DMG2302UK-13 DMG2302UK.pdf
DMG2302UK-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.4nC
Pulsed drain current: 12A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMG2302UKQ-13 DMG2302UKQ.pdf
DMG2302UKQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.4nC
Application: automotive industry
Pulsed drain current: 12A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMG2302UQ-7 DMG2302UQ.pdf
DMG2302UQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 4.3nC
Application: automotive industry
Pulsed drain current: 25A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN3065LW-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED90BB128E54A18&compId=DMN3065LW.pdf?ci_sign=64395f49275f7994814ea379c2493f36ffcd24f2
DMN3065LW-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Polarisation: unipolar
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Power dissipation: 0.77W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
auf Bestellung 451 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
229+0.31 EUR
327+0.22 EUR
382+0.19 EUR
Mindestbestellmenge: 152
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1SMB5929B-13 1SMB59xxB_ser.pdf
1SMB5929B-13
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 1321 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
212+0.34 EUR
241+0.3 EUR
376+0.19 EUR
511+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 173
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DMN3042L-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C970B7E97238BF&compId=DMN3042L.pdf?ci_sign=dc29de961bbfa8e5d871beaa03a4027b9ae91cc1
DMN3042L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 1050 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
424+0.17 EUR
500+0.14 EUR
747+0.096 EUR
820+0.087 EUR
Mindestbestellmenge: 334
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SMBJ18A-13-F ds19002.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMBJ18AQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZX84C6V8Q-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835
BZX84C6V8Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.8V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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S5BC-13-F pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B983543627B4C143&compId=S5AC_ser.pdf?ci_sign=78a844e5c7496fd8adffaaf94ae8d3c0f76d60d5
S5BC-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A
Kind of package: reel; tape
Mounting: SMD
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 40pF
Max. forward voltage: 1.15V
Load current: 5A
Max. forward impulse current: 100A
Max. off-state voltage: 100V
Case: SMC
auf Bestellung 1923 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
219+0.33 EUR
274+0.26 EUR
302+0.24 EUR
500+0.19 EUR
700+0.18 EUR
Mindestbestellmenge: 162
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DPBT8105-7 ds30514.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 600mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 2A
Current gain: 30...300
Collector-emitter voltage: 60V
Quantity in set/package: 3000pcs.
Polarisation: bipolar
Frequency: 150MHz
Type of transistor: PNP
Produkt ist nicht verfügbar
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BAS21T-7-F Ds30264.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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AP7361C-18SP-13 AP7361C.pdf
AP7361C-18SP-13
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SO8; SMD; ±1%
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 1A
Voltage drop: 0.7V
Output voltage: 1.8V
Input voltage: 2.2...6V
Tolerance: ±1%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7361C
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
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B240AE-13 B220AEBE-B245AEBE.pdf
B240AE-13
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; reel,tape
Case: SMA
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 93pF
Leakage current: 15mA
Max. forward voltage: 0.5V
Load current: 2A
Max. off-state voltage: 40V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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B240AQ-13-F B220_A-B260_A.pdf
B240AQ-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; reel,tape
Application: automotive industry
Case: SMA
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 200pF
Leakage current: 20mA
Max. forward voltage: 0.5V
Load current: 2A
Max. off-state voltage: 40V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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