Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74583) > Seite 1210 nach 1244
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DDTC114ECAQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35 Application: automotive industry Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DMN3032LFDB-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Pulsed drain current: 25A Power dissipation: 1.7W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Gate charge: 10.6nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DMN3055LFDB-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: U-DFN2020-6 Gate charge: 11.2nC On-state resistance: 75mΩ Power dissipation: 0.87W Drain current: 4A Gate-source voltage: ±12V Pulsed drain current: 25A Drain-source voltage: 30V Kind of package: 7 inch reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DSS45160FDB-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN / PNP; bipolar; complementary pair; 60V; 1A; 2.47W Case: U-DFN2020-6 Collector current: 1A Pulsed collector current: 1.5A Power dissipation: 2.47W Collector-emitter voltage: 60V Current gain: 70...430 Quantity in set/package: 3000pcs. Polarisation: bipolar Frequency: 90...175MHz Kind of transistor: complementary pair Type of transistor: NPN / PNP Kind of package: reel; tape Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DDTC123EE-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 20 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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AS331KTR-G1 | DIODES INCORPORATED |
![]() Description: IC: comparator; low-power; Cmp: 1; SMT; SOT25; reel,tape; 200nA Mounting: SMT Operating temperature: -40...85°C Kind of output: open collector Input offset current: 200nA Input offset voltage: 7mV Kind of comparator: low-power Voltage supply range: ± 1...18V DC; 2...36V DC Number of comparators: 1 Type of integrated circuit: comparator Case: SOT25 Kind of package: reel; tape |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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74AUP1G86SE-7 | DIODES INCORPORATED |
![]() Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS; SMD; SOT353; 0.8÷3.6VDC; AUP Type of integrated circuit: digital Kind of gate: XOR Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SOT353 Supply voltage: 0.8...3.6V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: AUP Kind of input: with Schmitt trigger Kind of output: push-pull |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
AL17150-10BS7-13 | DIODES INCORPORATED |
![]() Description: IC: driver; buck-boost,flyback; LED driver; SO7; 300mA; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: LED driver Output current: 0.3A Case: SO7 Mounting: SMD Topology: buck-boost; flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.2...8.8V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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DMN6040SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8 Case: SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET x2 Polarisation: unipolar On-state resistance: 55mΩ Power dissipation: 0.8W Drain current: 4.1A Gate-source voltage: ±20V Drain-source voltage: 60V Kind of package: 13 inch reel; tape |
auf Bestellung 933 Stücke: Lieferzeit 14-21 Tag (e) |
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B360BQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Capacitance: 200pF Max. forward voltage: 0.7V Leakage current: 20mA Max. forward impulse current: 100A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
B360Q-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Case: SMC Max. off-state voltage: 60V Leakage current: 20mA Kind of package: reel; tape Capacitance: 200pF Load current: 3A Max. forward voltage: 0.7V Application: automotive industry Max. forward impulse current: 100A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
ZTX758 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.5W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.5A Power dissipation: 1.5W Case: TO92 Mounting: THT Quantity in set/package: 4000pcs. Kind of package: bulk Frequency: 50MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
ZTX758STZ | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.5W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.5A Power dissipation: 1.5W Case: TO92 Mounting: THT Quantity in set/package: 2000pcs. Kind of package: Ammo Pack Frequency: 50MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RS3B-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 100V; 3A; 150ns; SMC; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Case: SMC Kind of package: reel; tape Reverse recovery time: 150ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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AP2156SG-13 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 0.5A Number of channels: 2 Kind of output: P-Channel Mounting: SMD Case: SO8 Kind of package: reel; tape Supply voltage: 2.7...5.5V DC On-state resistance: 90mΩ Active logical level: high |
auf Bestellung 2223 Stücke: Lieferzeit 14-21 Tag (e) |
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TLV272CM8-13 | DIODES INCORPORATED |
![]() Description: IC: operational amplifier Type of integrated circuit: operational amplifier |
auf Bestellung 962500 Stücke: Lieferzeit 14-21 Tag (e) |
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NE555S-13 | DIODES INCORPORATED |
![]() Description: IC: peripheral circuit Type of integrated circuit: peripheral circuit |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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GBU806-01-LS | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase Type of bridge rectifier: single-phase |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ60A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 60V Breakdown voltage: 66.7...76.7V Max. forward impulse current: 6.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BSS84DWQ-13 | DIODES INCORPORATED |
![]() Description: BSS84DWQ-13 |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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TLC271ACS-13 | DIODES INCORPORATED |
![]() Description: IC: operational amplifier Type of integrated circuit: operational amplifier |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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TLC271BCS-13 | DIODES INCORPORATED |
![]() Description: IC: operational amplifier Type of integrated circuit: operational amplifier |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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TLC271BIS-13 | DIODES INCORPORATED |
![]() Description: IC: operational amplifier Type of integrated circuit: operational amplifier |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DSS4160FDBQ-7 | DIODES INCORPORATED |
![]() Description: DSS4160FDBQ-7 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FES1DEQ-7 | DIODES INCORPORATED |
![]() Description: Diode: rectifying Type of diode: rectifying |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6070SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.6A; 1.2W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.6A Power dissipation: 1.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
auf Bestellung 2494 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ36AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS Type of diode: TVS |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMAJ36ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS Type of diode: TVS |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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AZ23C36-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 36V; SMD; reel,tape; SOT23; double,common anode Case: SOT23 Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Power dissipation: 0.3W Zener voltage: 36V Semiconductor structure: common anode; double Type of diode: Zener |
auf Bestellung 2978 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG3415UQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 71mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry Version: ESD |
auf Bestellung 1092 Stücke: Lieferzeit 14-21 Tag (e) |
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DDTC124EE-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ Current gain: 56 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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DDTC124EUA-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ Current gain: 56 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DDTC124EUAQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ Application: automotive industry Current gain: 56 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
DDTC124TCA-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Current gain: 100...600 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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DDTC124TE-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 150mW; SOT523; 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Current gain: 100...600 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DDTC124TEQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 150mW; SOT523; 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Application: automotive industry Current gain: 100...600 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PAM2312AABADJ | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; 1A; TSOT25; SMD; 1.5MHz Case: TSOT25 Mounting: SMD Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Type of integrated circuit: PMIC Operating temperature: -40...85°C Output current: 1A Input voltage: 2.5...5.5V DC Efficiency: 96% Frequency: 1.5MHz Topology: buck |
auf Bestellung 8900 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXT10N50DE6TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ10A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; unidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.8V Max. forward impulse current: 35.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ10CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.8V Max. forward impulse current: 35.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 10µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 390 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ100CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 100V Breakdown voltage: 111...128V Max. forward impulse current: 3.7A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
SMBJ100CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 100V Breakdown voltage: 111...128V Max. forward impulse current: 3.7A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
ZXTN5551FLTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DT1140-04LPQ-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS array Type of diode: TVS array |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXSC300E5TA | DIODES INCORPORATED |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2016UFDF-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET Type of transistor: P-MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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B340AX-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying Type of diode: Schottky rectifying |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVC1G04QSE-7 | DIODES INCORPORATED |
![]() Description: IC: digital Type of integrated circuit: digital |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVC1G00QSE-7 | DIODES INCORPORATED |
![]() Description: IC: digital Type of integrated circuit: digital |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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MBR10200CT-G1 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; THT; 200V; 5Ax2; TO220AB; Ufmax: 0.95V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.95V Max. forward impulse current: 100A Kind of package: tube Leakage current: 15mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
ZXLD1360QET5TA | DIODES INCORPORATED |
![]() Description: ZXLD1360QET5TA |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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TLV431BQFTA | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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TLV431AQE5TA | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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74HCT595T16-13 | DIODES INCORPORATED |
![]() Description: IC: digital; 8bit,shift register,serial input,parallel out Type of integrated circuit: digital Kind of integrated circuit: 8bit; parallel out; serial input; shift register Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Family: HCT Operating temperature: -40...150°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Kind of output: 3-state Kind of input: with Schmitt trigger |
auf Bestellung 1948 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT4401Q-13-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS84WQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET Type of transistor: P-MOSFET |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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ULN62003AS16-13 | DIODES INCORPORATED |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZLLS2000QTA | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying Type of diode: Schottky rectifying |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54AWQ-13-F | DIODES INCORPORATED |
![]() Description: BAT54AWQ-13-F |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ120CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 133÷153V; 3.1A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 120V Breakdown voltage: 133...153V Max. forward impulse current: 3.1A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 2850 Stücke: Lieferzeit 14-21 Tag (e) |
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DDTC114ECAQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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DMN3032LFDB-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Pulsed drain current: 25A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Pulsed drain current: 25A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN3055LFDB-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN2020-6
Gate charge: 11.2nC
On-state resistance: 75mΩ
Power dissipation: 0.87W
Drain current: 4A
Gate-source voltage: ±12V
Pulsed drain current: 25A
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN2020-6
Gate charge: 11.2nC
On-state resistance: 75mΩ
Power dissipation: 0.87W
Drain current: 4A
Gate-source voltage: ±12V
Pulsed drain current: 25A
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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DSS45160FDB-7 |
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Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60V; 1A; 2.47W
Case: U-DFN2020-6
Collector current: 1A
Pulsed collector current: 1.5A
Power dissipation: 2.47W
Collector-emitter voltage: 60V
Current gain: 70...430
Quantity in set/package: 3000pcs.
Polarisation: bipolar
Frequency: 90...175MHz
Kind of transistor: complementary pair
Type of transistor: NPN / PNP
Kind of package: reel; tape
Mounting: SMD
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60V; 1A; 2.47W
Case: U-DFN2020-6
Collector current: 1A
Pulsed collector current: 1.5A
Power dissipation: 2.47W
Collector-emitter voltage: 60V
Current gain: 70...430
Quantity in set/package: 3000pcs.
Polarisation: bipolar
Frequency: 90...175MHz
Kind of transistor: complementary pair
Type of transistor: NPN / PNP
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
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DDTC123EE-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 20
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 20
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AS331KTR-G1 |
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Hersteller: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; SMT; SOT25; reel,tape; 200nA
Mounting: SMT
Operating temperature: -40...85°C
Kind of output: open collector
Input offset current: 200nA
Input offset voltage: 7mV
Kind of comparator: low-power
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 1
Type of integrated circuit: comparator
Case: SOT25
Kind of package: reel; tape
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; SMT; SOT25; reel,tape; 200nA
Mounting: SMT
Operating temperature: -40...85°C
Kind of output: open collector
Input offset current: 200nA
Input offset voltage: 7mV
Kind of comparator: low-power
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 1
Type of integrated circuit: comparator
Case: SOT25
Kind of package: reel; tape
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
264+ | 0.27 EUR |
298+ | 0.24 EUR |
348+ | 0.21 EUR |
424+ | 0.17 EUR |
685+ | 0.1 EUR |
725+ | 0.099 EUR |
74AUP1G86SE-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS; SMD; SOT353; 0.8÷3.6VDC; AUP
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS; SMD; SOT353; 0.8÷3.6VDC; AUP
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Kind of output: push-pull
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AL17150-10BS7-13 |
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Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; buck-boost,flyback; LED driver; SO7; 300mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Output current: 0.3A
Case: SO7
Mounting: SMD
Topology: buck-boost; flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.2...8.8V DC
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; buck-boost,flyback; LED driver; SO7; 300mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Output current: 0.3A
Case: SO7
Mounting: SMD
Topology: buck-boost; flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.2...8.8V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMN6040SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
On-state resistance: 55mΩ
Power dissipation: 0.8W
Drain current: 4.1A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
On-state resistance: 55mΩ
Power dissipation: 0.8W
Drain current: 4.1A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
auf Bestellung 933 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
85+ | 0.84 EUR |
108+ | 0.67 EUR |
149+ | 0.48 EUR |
264+ | 0.27 EUR |
278+ | 0.26 EUR |
B360BQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.7V
Leakage current: 20mA
Max. forward impulse current: 100A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.7V
Leakage current: 20mA
Max. forward impulse current: 100A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
B360Q-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Case: SMC
Max. off-state voltage: 60V
Leakage current: 20mA
Kind of package: reel; tape
Capacitance: 200pF
Load current: 3A
Max. forward voltage: 0.7V
Application: automotive industry
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Case: SMC
Max. off-state voltage: 60V
Leakage current: 20mA
Kind of package: reel; tape
Capacitance: 200pF
Load current: 3A
Max. forward voltage: 0.7V
Application: automotive industry
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ZTX758 |
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Hersteller: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.5W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.5W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.5W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.5W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 50MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ZTX758STZ |
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Hersteller: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.5W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.5W
Case: TO92
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.5W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.5W
Case: TO92
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 50MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RS3B-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 150ns; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
Reverse recovery time: 150ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 150ns; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AP2156SG-13 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 2
Kind of output: P-Channel
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
On-state resistance: 90mΩ
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 2
Kind of output: P-Channel
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
On-state resistance: 90mΩ
Active logical level: high
auf Bestellung 2223 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
145+ | 0.49 EUR |
156+ | 0.46 EUR |
164+ | 0.44 EUR |
174+ | 0.41 EUR |
250+ | 0.39 EUR |
TLV272CM8-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
auf Bestellung 962500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.29 EUR |
NE555S-13 |
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Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: peripheral circuit
Type of integrated circuit: peripheral circuit
Category: Watchdog and reset circuits
Description: IC: peripheral circuit
Type of integrated circuit: peripheral circuit
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.12 EUR |
GBU806-01-LS |
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
320+ | 0.33 EUR |
SMBJ60A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS84DWQ-13 |
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auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.15 EUR |
TLC271ACS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.43 EUR |
TLC271BCS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.44 EUR |
TLC271BIS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.44 EUR |
DSS4160FDBQ-7 |
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auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.29 EUR |
FES1DEQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.14 EUR |
DMN6070SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.6A; 1.2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.6A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.6A; 1.2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.6A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2494 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
116+ | 0.62 EUR |
129+ | 0.56 EUR |
280+ | 0.26 EUR |
296+ | 0.24 EUR |
1000+ | 0.23 EUR |
SMAJ36AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.12 EUR |
P6SMAJ36ADF-13 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.17 EUR |
AZ23C36-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 36V; SMD; reel,tape; SOT23; double,common anode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Zener voltage: 36V
Semiconductor structure: common anode; double
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 36V; SMD; reel,tape; SOT23; double,common anode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Zener voltage: 36V
Semiconductor structure: common anode; double
Type of diode: Zener
auf Bestellung 2978 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
397+ | 0.18 EUR |
463+ | 0.15 EUR |
799+ | 0.09 EUR |
1386+ | 0.052 EUR |
1462+ | 0.049 EUR |
DMG3415UQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 71mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 71mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Version: ESD
auf Bestellung 1092 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
143+ | 0.5 EUR |
160+ | 0.45 EUR |
241+ | 0.3 EUR |
463+ | 0.15 EUR |
DDTC124EE-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDTC124EUA-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDTC124EUAQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
Current gain: 56
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
Current gain: 56
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDTC124TCA-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Current gain: 100...600
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Current gain: 100...600
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDTC124TE-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 150mW; SOT523; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Current gain: 100...600
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 150mW; SOT523; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Current gain: 100...600
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDTC124TEQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 150mW; SOT523; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Application: automotive industry
Current gain: 100...600
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 150mW; SOT523; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Application: automotive industry
Current gain: 100...600
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PAM2312AABADJ |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; 1A; TSOT25; SMD; 1.5MHz
Case: TSOT25
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
Output current: 1A
Input voltage: 2.5...5.5V DC
Efficiency: 96%
Frequency: 1.5MHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; 1A; TSOT25; SMD; 1.5MHz
Case: TSOT25
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
Output current: 1A
Input voltage: 2.5...5.5V DC
Efficiency: 96%
Frequency: 1.5MHz
Topology: buck
auf Bestellung 8900 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
178+ | 0.4 EUR |
200+ | 0.36 EUR |
232+ | 0.31 EUR |
254+ | 0.28 EUR |
355+ | 0.2 EUR |
376+ | 0.19 EUR |
ZXT10N50DE6TA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.35 EUR |
SMBJ10A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
47+ | 1.52 EUR |
SMBJ10CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 390 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
266+ | 0.27 EUR |
371+ | 0.19 EUR |
SMBJ100CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBJ100CAQ-13-F |
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ZXTN5551FLTA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.096 EUR |
DT1140-04LPQ-7 |
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Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.13 EUR |
ZXSC300E5TA |
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Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.39 EUR |
DMP2016UFDF-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.22 EUR |
B340AX-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.062 EUR |
74LVC1G04QSE-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.097 EUR |
74LVC1G00QSE-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.1 EUR |
MBR10200CT-G1 |
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Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 5Ax2; TO220AB; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: tube
Leakage current: 15mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 5Ax2; TO220AB; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: tube
Leakage current: 15mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ZXLD1360QET5TA |
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Hersteller: DIODES INCORPORATED
Category: Integrated circuits - Unclassified
Description: ZXLD1360QET5TA
Category: Integrated circuits - Unclassified
Description: ZXLD1360QET5TA
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 2.35 EUR |
TLV431BQFTA |
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Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.23 EUR |
TLV431AQE5TA |
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Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.25 EUR |
74HCT595T16-13 |
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Hersteller: DIODES INCORPORATED
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Family: HCT
Operating temperature: -40...150°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Kind of output: 3-state
Kind of input: with Schmitt trigger
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Family: HCT
Operating temperature: -40...150°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Kind of output: 3-state
Kind of input: with Schmitt trigger
auf Bestellung 1948 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
205+ | 0.35 EUR |
233+ | 0.31 EUR |
272+ | 0.26 EUR |
338+ | 0.21 EUR |
358+ | 0.2 EUR |
MMBT4401Q-13-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.034 EUR |
BSS84WQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.045 EUR |
ULN62003AS16-13 |
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Hersteller: DIODES INCORPORATED
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.4 EUR |
ZLLS2000QTA |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.47 EUR |
BAT54AWQ-13-F |
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auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.051 EUR |
SMBJ120CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷153V; 3.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 3.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷153V; 3.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 3.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2850 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
465+ | 0.15 EUR |
520+ | 0.14 EUR |
585+ | 0.12 EUR |
625+ | 0.11 EUR |