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AP22816BKAWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Mounting: SMD
Active logical level: low
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: TSOT25
Operating temperature: -40...85°C
On-state resistance: 95mΩ
Number of channels: 1
Output current: 1A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
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AP22817AKAWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Mounting: SMD
Active logical level: high
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: TSOT25
Operating temperature: -40...85°C
On-state resistance: 95mΩ
Number of channels: 1
Output current: 1.5A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
Produkt ist nicht verfügbar
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AP22817AKBWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Mounting: SMD
Active logical level: high
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: TSOT25
Operating temperature: -40...85°C
On-state resistance: 95mΩ
Number of channels: 1
Output current: 1.5A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
Produkt ist nicht verfügbar
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AP22818AKBWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Mounting: SMD
Active logical level: high
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: TSOT25
Operating temperature: -40...85°C
On-state resistance: 95mΩ
Number of channels: 1
Output current: 2A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
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AP22818AKWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Mounting: SMD
Active logical level: high
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: TSOT25
Operating temperature: -40...85°C
On-state resistance: 95mΩ
Number of channels: 1
Output current: 2A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
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AP22818BKAWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Mounting: SMD
Active logical level: low
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: TSOT25
Operating temperature: -40...85°C
On-state resistance: 95mΩ
Number of channels: 1
Output current: 2A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
Produkt ist nicht verfügbar
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AP22818BKBWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Mounting: SMD
Active logical level: low
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: TSOT25
Operating temperature: -40...85°C
On-state resistance: 95mΩ
Number of channels: 1
Output current: 2A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
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AP22818BKEWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Mounting: SMD
Active logical level: low
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: TSOT25
Operating temperature: -40...85°C
On-state resistance: 95mΩ
Number of channels: 1
Output current: 2A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
Produkt ist nicht verfügbar
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DF02M DF02M DIODES INCORPORATED DF005_10M.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
auf Bestellung 573 Stücke:
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139+0.51 EUR
187+0.38 EUR
313+0.23 EUR
391+0.18 EUR
463+0.15 EUR
Mindestbestellmenge: 139
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B140WS-7 B140WS-7 DIODES INCORPORATED ds31543.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 1A; reel,tape; 235mW
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 125pF
Max. forward voltage: 0.62V
Leakage current: 50µA
Max. forward impulse current: 3A
Kind of package: reel; tape
Power dissipation: 235mW
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ES3DB-13-F ES3DB-13-F DIODES INCORPORATED ds14003.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMB; Ufmax: 900mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.9V
Kind of package: reel; tape
auf Bestellung 2210 Stücke:
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120+0.6 EUR
176+0.41 EUR
215+0.33 EUR
250+0.3 EUR
500+0.28 EUR
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ES3D-13-F ES3D-13-F DIODES INCORPORATED ds14003.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMC; Ufmax: 0.9V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
auf Bestellung 2670 Stücke:
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167+0.43 EUR
242+0.3 EUR
283+0.25 EUR
500+0.22 EUR
1000+0.21 EUR
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SD101AWS-7-F SD101AWS-7-F DIODES INCORPORATED SD101AWS-SD101CWS.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 60V; 15mA; 1ns; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15mA
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward voltage: 1V
Max. forward impulse current: 50mA
Reverse recovery time: 1ns
Kind of package: reel; tape
Power dissipation: 0.2W
auf Bestellung 648 Stücke:
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250+0.29 EUR
317+0.23 EUR
348+0.21 EUR
489+0.15 EUR
633+0.11 EUR
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SD101AW-7-F SD101AW-7-F DIODES INCORPORATED ds11012.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 60V; 15mA; 1ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15mA
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward voltage: 1V
Max. forward impulse current: 2A
Reverse recovery time: 1ns
Kind of package: reel; tape
Power dissipation: 0.4W
auf Bestellung 2920 Stücke:
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173+0.41 EUR
562+0.13 EUR
618+0.12 EUR
685+0.1 EUR
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BAS16Q-13-F DIODES INCORPORATED BAS16_MMBD4148_MMBD914.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAS16Q-7-F BAS16Q-7-F DIODES INCORPORATED BAS16_MMBD4148_MMBD914.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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B130LB-13-F
+1
B130LB-13-F DIODES INCORPORATED ds30043.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 90pF
Max. forward voltage: 0.445V
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 2084 Stücke:
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209+0.34 EUR
253+0.28 EUR
281+0.25 EUR
404+0.18 EUR
521+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 209
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SMAJ13A-13-F SMAJ13A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1253 Stücke:
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250+0.29 EUR
309+0.23 EUR
414+0.17 EUR
Mindestbestellmenge: 250
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SMAJ13AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P4SMAJ13ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ150A-13-F SMAJ150A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 167÷185V; 1.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 1.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 2770 Stücke:
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250+0.29 EUR
295+0.24 EUR
341+0.21 EUR
450+0.16 EUR
717+0.1 EUR
975+0.073 EUR
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SMAJ150CA-13-F SMAJ150CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 167÷185V; 1.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 1.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 2008 Stücke:
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313+0.23 EUR
374+0.19 EUR
481+0.15 EUR
Mindestbestellmenge: 313
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ZXSC300E5TA DIODES INCORPORATED ZXSC300.pdf Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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BC857BLP-7 DIODES INCORPORATED ds30526.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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MMSZ5250B-7-F MMSZ5250B-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 20V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 631 Stücke:
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625+0.11 EUR
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BZX84C15-7-F BZX84C15-7-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 2730 Stücke:
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715+0.1 EUR
1283+0.056 EUR
1812+0.039 EUR
2284+0.031 EUR
2500+0.029 EUR
2660+0.027 EUR
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BZX84C15Q-13-F BZX84C15Q-13-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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BZX84C15S-7-F BZX84C15S-7-F DIODES INCORPORATED BZX84CxxS_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOT363; reel,tape; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: double independent
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D3V3F4U6S-7 D3V3F4U6S-7 DIODES INCORPORATED D3V3F4U6S.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.2W; unidirectional; ESD; SOT363; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.2W
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: SOT363
Max. off-state voltage: 3.3V
Leakage current: 0.2µA
Number of channels: 4
Capacitance: 0.85pF
Application: HDMI; USB
Kind of package: reel; tape
auf Bestellung 416 Stücke:
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186+0.39 EUR
222+0.32 EUR
250+0.29 EUR
391+0.18 EUR
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SBRT5A50SA-13 SBRT5A50SA-13 DIODES INCORPORATED SBRT5A50SA.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 5A; SMA; Ufmax: 0.46V; Ifsm: 70A; SBR®
Type of diode: rectifying
Max. forward impulse current: 70A
Semiconductor structure: single diode
Mounting: SMD
Case: SMA
Max. off-state voltage: 50V
Kind of package: reel; tape
Max. forward voltage: 0.46V
Technology: SBR®
Load current: 5A
auf Bestellung 1480 Stücke:
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228+0.31 EUR
290+0.25 EUR
345+0.21 EUR
371+0.19 EUR
407+0.18 EUR
500+0.16 EUR
Mindestbestellmenge: 228
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FCX1047ATA FCX1047ATA DIODES INCORPORATED FCX1047A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 10V; 4A; 2W; SOT89
Mounting: SMD
Case: SOT89
Power dissipation: 2W
Collector current: 4A
Collector-emitter voltage: 10V
Pulsed collector current: 20A
Current gain: 60...1200
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Type of transistor: NPN
auf Bestellung 600 Stücke:
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63+1.14 EUR
100+0.72 EUR
151+0.48 EUR
250+0.41 EUR
500+0.39 EUR
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ES3C-13-F DIODES INCORPORATED ds14003.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 25ns; SMC; Ufmax: 900mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 0.9V
Kind of package: reel; tape
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ES3CB-13-F DIODES INCORPORATED ds14003.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 25ns; SMB; Ufmax: 900mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.9V
Kind of package: reel; tape
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DMPH4015SSS-13 DMPH4015SSS-13 DIODES INCORPORATED DMPH4015SSS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -85A
Drain current: -8.1A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 15mΩ
Power dissipation: 1.8W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SO8
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DMPH4025SFVWQ-13 DIODES INCORPORATED DMPH4025SFVWQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -7.3A
Drain-source voltage: -40V
Gate charge: 38.6nC
On-state resistance: 45mΩ
Power dissipation: 2.3W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
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DMPH4029LFGQ-7 DIODES INCORPORATED DMPH4029LFGQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -88A
Drain current: -6.7A
Drain-source voltage: -40V
Gate charge: 34nC
On-state resistance: 45mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
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DMPH4011SK3-13 DIODES INCORPORATED DMPH4011SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -316A
Drain current: -56A
Drain-source voltage: -40V
Gate charge: 104nC
On-state resistance: 19mΩ
Power dissipation: 3.7W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
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DMPH4011SK3Q-13 DIODES INCORPORATED DMPH4011SK3Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -316A
Drain current: -56A
Drain-source voltage: -40V
Gate charge: 104nC
On-state resistance: 19mΩ
Power dissipation: 3.7W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
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DMPH4013SK3-13 DIODES INCORPORATED DMPH4013SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -120A
Drain current: -40A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 23mΩ
Power dissipation: 3.7W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
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DMPH4013SK3Q-13 DIODES INCORPORATED DMPH4013SK3Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -120A
Drain current: -40A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 23mΩ
Power dissipation: 3.7W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
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DMPH4013SPSQ-13 DIODES INCORPORATED DMPH4013SPSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -49A; Idm: -277A; 3.3W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -277A
Drain current: -49A
Drain-source voltage: -40V
Gate charge: 87nC
On-state resistance: 23mΩ
Power dissipation: 3.3W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
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DMPH4015SK3-13 DIODES INCORPORATED DMPH4015SK3.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -10A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 15mΩ
Power dissipation: 3.3W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
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DMPH4015SK3Q-13 DIODES INCORPORATED DMPH4015SK3Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -10A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 15mΩ
Power dissipation: 3.3W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
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DMPH4015SPSQ-13 DIODES INCORPORATED DMPH4015SPSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -100A; 2.6W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -9A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 15mΩ
Power dissipation: 2.6W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Produkt ist nicht verfügbar
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DMPH4015SSSQ-13 DMPH4015SSSQ-13 DIODES INCORPORATED DMPH4015SSSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -85A
Drain current: -8.1A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 15mΩ
Power dissipation: 1.8W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SO8
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DMPH4023SK3-13 DIODES INCORPORATED DMPH4023SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -70A
Drain current: -35A
Drain-source voltage: -40V
Gate charge: 18.7nC
On-state resistance: 26mΩ
Power dissipation: 3.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
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DMPH4023SK3Q-13 DIODES INCORPORATED DMPH4023SK3Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -70A
Drain current: -35A
Drain-source voltage: -40V
Gate charge: 18.7nC
On-state resistance: 26mΩ
Power dissipation: 3.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
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DMPH4025SFVWQ-7 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -7.3A
Drain-source voltage: -40V
Gate charge: 38.6nC
On-state resistance: 45mΩ
Power dissipation: 2.3W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
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DMPH4029LFG-13 DIODES INCORPORATED DMPH4029LFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -88A
Drain current: -6.7A
Drain-source voltage: -40V
Gate charge: 34nC
On-state resistance: 45mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
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DMPH4029LFG-7 DIODES INCORPORATED DMPH4029LFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -88A
Drain current: -6.7A
Drain-source voltage: -40V
Gate charge: 34nC
On-state resistance: 45mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Produkt ist nicht verfügbar
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DMPH4029LFGQ-13 DIODES INCORPORATED DMPH4029LFGQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -88A
Drain current: -6.7A
Drain-source voltage: -40V
Gate charge: 34nC
On-state resistance: 45mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Produkt ist nicht verfügbar
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DMP4051LK3-13 DMP4051LK3-13 DIODES INCORPORATED DMP4051LK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.4A; 8.9W; TO252
Mounting: SMD
Case: TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.4A
On-state resistance: 85mΩ
Power dissipation: 8.9W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 1121 Stücke:
Lieferzeit 14-21 Tag (e)
97+0.74 EUR
191+0.38 EUR
239+0.3 EUR
260+0.28 EUR
500+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 97
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ZTX453 ZTX453 DIODES INCORPORATED ztx453.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 40...200
Mounting: THT
Kind of package: bulk
Frequency: 150MHz
Quantity in set/package: 4000pcs.
auf Bestellung 440 Stücke:
Lieferzeit 14-21 Tag (e)
71+1.02 EUR
114+0.63 EUR
174+0.41 EUR
Mindestbestellmenge: 71
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ZTX453STZ DIODES INCORPORATED ZTX453.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 40...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 150MHz
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AP2204K-2.5TRG1 AP2204K-2.5TRG1 DIODES INCORPORATED AP2204_Jan2020.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.2A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 2.5V
Output current: 0.2A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2204
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
Integrated circuit features: shutdown mode control input
auf Bestellung 2270 Stücke:
Lieferzeit 14-21 Tag (e)
325+0.22 EUR
395+0.18 EUR
440+0.16 EUR
500+0.15 EUR
Mindestbestellmenge: 325
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AP2204K-1.5TRG1 AP2204K-1.5TRG1 DIODES INCORPORATED AP2204_Jan2020.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.2A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 1.5V
Output current: 0.2A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2204
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.6...24V
Integrated circuit features: shutdown mode control input
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AP2204K-2.8TRG1 AP2204K-2.8TRG1 DIODES INCORPORATED AP2204_Jan2020.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 2.8V
Output current: 0.2A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2204
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.6...24V
Integrated circuit features: shutdown mode control input
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BCX5216QTA BCX5216QTA DIODES INCORPORATED BCX5216Q_BCX5316Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Pulsed collector current: 2A
Quantity in set/package: 1000pcs.
Application: automotive industry
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BCX52TA BCX52TA DIODES INCORPORATED BCX51_52_53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
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BCX5216TA BCX5216TA DIODES INCORPORATED BCX51_52_53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
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AP22816BKAWT-7 AP22816_17_18.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Mounting: SMD
Active logical level: low
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: TSOT25
Operating temperature: -40...85°C
On-state resistance: 95mΩ
Number of channels: 1
Output current: 1A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
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AP22817AKAWT-7 AP22816_17_18.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Mounting: SMD
Active logical level: high
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: TSOT25
Operating temperature: -40...85°C
On-state resistance: 95mΩ
Number of channels: 1
Output current: 1.5A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
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AP22817AKBWT-7 AP22816_17_18.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Mounting: SMD
Active logical level: high
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: TSOT25
Operating temperature: -40...85°C
On-state resistance: 95mΩ
Number of channels: 1
Output current: 1.5A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
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AP22818AKBWT-7 AP22816_17_18.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Mounting: SMD
Active logical level: high
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: TSOT25
Operating temperature: -40...85°C
On-state resistance: 95mΩ
Number of channels: 1
Output current: 2A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
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AP22818AKWT-7 AP22816_17_18.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Mounting: SMD
Active logical level: high
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: TSOT25
Operating temperature: -40...85°C
On-state resistance: 95mΩ
Number of channels: 1
Output current: 2A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
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AP22818BKAWT-7 AP22816_17_18.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Mounting: SMD
Active logical level: low
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: TSOT25
Operating temperature: -40...85°C
On-state resistance: 95mΩ
Number of channels: 1
Output current: 2A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
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AP22818BKBWT-7 AP22816_17_18.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Mounting: SMD
Active logical level: low
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: TSOT25
Operating temperature: -40...85°C
On-state resistance: 95mΩ
Number of channels: 1
Output current: 2A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
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AP22818BKEWT-7 AP22816_17_18.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Mounting: SMD
Active logical level: low
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: TSOT25
Operating temperature: -40...85°C
On-state resistance: 95mΩ
Number of channels: 1
Output current: 2A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
Produkt ist nicht verfügbar
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DF02M DF005_10M.pdf
DF02M
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
auf Bestellung 573 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
187+0.38 EUR
313+0.23 EUR
391+0.18 EUR
463+0.15 EUR
Mindestbestellmenge: 139
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B140WS-7 ds31543.pdf
B140WS-7
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 1A; reel,tape; 235mW
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 125pF
Max. forward voltage: 0.62V
Leakage current: 50µA
Max. forward impulse current: 3A
Kind of package: reel; tape
Power dissipation: 235mW
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ES3DB-13-F ds14003.pdf
ES3DB-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMB; Ufmax: 900mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.9V
Kind of package: reel; tape
auf Bestellung 2210 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
176+0.41 EUR
215+0.33 EUR
250+0.3 EUR
500+0.28 EUR
Mindestbestellmenge: 120
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ES3D-13-F ds14003.pdf
ES3D-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMC; Ufmax: 0.9V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
auf Bestellung 2670 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
242+0.3 EUR
283+0.25 EUR
500+0.22 EUR
1000+0.21 EUR
Mindestbestellmenge: 167
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SD101AWS-7-F SD101AWS-SD101CWS.pdf
SD101AWS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 60V; 15mA; 1ns; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15mA
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward voltage: 1V
Max. forward impulse current: 50mA
Reverse recovery time: 1ns
Kind of package: reel; tape
Power dissipation: 0.2W
auf Bestellung 648 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
317+0.23 EUR
348+0.21 EUR
489+0.15 EUR
633+0.11 EUR
Mindestbestellmenge: 250
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SD101AW-7-F ds11012.pdf
SD101AW-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 60V; 15mA; 1ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15mA
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward voltage: 1V
Max. forward impulse current: 2A
Reverse recovery time: 1ns
Kind of package: reel; tape
Power dissipation: 0.4W
auf Bestellung 2920 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
562+0.13 EUR
618+0.12 EUR
685+0.1 EUR
Mindestbestellmenge: 173
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BAS16Q-13-F BAS16_MMBD4148_MMBD914.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAS16Q-7-F BAS16_MMBD4148_MMBD914.pdf
BAS16Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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B130LB-13-F ds30043.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 90pF
Max. forward voltage: 0.445V
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 2084 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
253+0.28 EUR
281+0.25 EUR
404+0.18 EUR
521+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 209
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SMAJ13A-13-F SMAJ_ser.pdf
SMAJ13A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1253 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
309+0.23 EUR
414+0.17 EUR
Mindestbestellmenge: 250
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SMAJ13AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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P4SMAJ13ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMAJ150A-13-F SMAJ_ser.pdf
SMAJ150A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 167÷185V; 1.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 1.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 2770 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
295+0.24 EUR
341+0.21 EUR
450+0.16 EUR
717+0.1 EUR
975+0.073 EUR
Mindestbestellmenge: 250
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SMAJ150CA-13-F SMAJ_ser.pdf
SMAJ150CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 167÷185V; 1.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 1.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 2008 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
374+0.19 EUR
481+0.15 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
ZXSC300E5TA ZXSC300.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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BC857BLP-7 ds30526.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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MMSZ5250B-7-F mmsz52xxb_Ser.pdf
MMSZ5250B-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 20V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 631 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
Mindestbestellmenge: 625
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BZX84C15-7-F BZX84Cxx_SER.pdf
BZX84C15-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 2730 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
1283+0.056 EUR
1812+0.039 EUR
2284+0.031 EUR
2500+0.029 EUR
2660+0.027 EUR
Mindestbestellmenge: 715
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BZX84C15Q-13-F BZX84Cxx_SER.pdf
BZX84C15Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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BZX84C15S-7-F BZX84CxxS_SER.pdf
BZX84C15S-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOT363; reel,tape; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: double independent
Produkt ist nicht verfügbar
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D3V3F4U6S-7 D3V3F4U6S.pdf
D3V3F4U6S-7
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.2W; unidirectional; ESD; SOT363; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.2W
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: SOT363
Max. off-state voltage: 3.3V
Leakage current: 0.2µA
Number of channels: 4
Capacitance: 0.85pF
Application: HDMI; USB
Kind of package: reel; tape
auf Bestellung 416 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
222+0.32 EUR
250+0.29 EUR
391+0.18 EUR
Mindestbestellmenge: 186
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SBRT5A50SA-13 SBRT5A50SA.pdf
SBRT5A50SA-13
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 5A; SMA; Ufmax: 0.46V; Ifsm: 70A; SBR®
Type of diode: rectifying
Max. forward impulse current: 70A
Semiconductor structure: single diode
Mounting: SMD
Case: SMA
Max. off-state voltage: 50V
Kind of package: reel; tape
Max. forward voltage: 0.46V
Technology: SBR®
Load current: 5A
auf Bestellung 1480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
290+0.25 EUR
345+0.21 EUR
371+0.19 EUR
407+0.18 EUR
500+0.16 EUR
Mindestbestellmenge: 228
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FCX1047ATA FCX1047A.pdf
FCX1047ATA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 10V; 4A; 2W; SOT89
Mounting: SMD
Case: SOT89
Power dissipation: 2W
Collector current: 4A
Collector-emitter voltage: 10V
Pulsed collector current: 20A
Current gain: 60...1200
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Type of transistor: NPN
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
100+0.72 EUR
151+0.48 EUR
250+0.41 EUR
500+0.39 EUR
Mindestbestellmenge: 63
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ES3C-13-F ds14003.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 25ns; SMC; Ufmax: 900mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 0.9V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ES3CB-13-F ds14003.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 25ns; SMB; Ufmax: 900mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.9V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DMPH4015SSS-13 DMPH4015SSS.pdf
DMPH4015SSS-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -85A
Drain current: -8.1A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 15mΩ
Power dissipation: 1.8W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SO8
Produkt ist nicht verfügbar
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DMPH4025SFVWQ-13 DMPH4025SFVWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -7.3A
Drain-source voltage: -40V
Gate charge: 38.6nC
On-state resistance: 45mΩ
Power dissipation: 2.3W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Produkt ist nicht verfügbar
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DMPH4029LFGQ-7 DMPH4029LFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -88A
Drain current: -6.7A
Drain-source voltage: -40V
Gate charge: 34nC
On-state resistance: 45mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Produkt ist nicht verfügbar
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DMPH4011SK3-13 DMPH4011SK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -316A
Drain current: -56A
Drain-source voltage: -40V
Gate charge: 104nC
On-state resistance: 19mΩ
Power dissipation: 3.7W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Produkt ist nicht verfügbar
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DMPH4011SK3Q-13 DMPH4011SK3Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -316A
Drain current: -56A
Drain-source voltage: -40V
Gate charge: 104nC
On-state resistance: 19mΩ
Power dissipation: 3.7W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Produkt ist nicht verfügbar
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DMPH4013SK3-13 DMPH4013SK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -120A
Drain current: -40A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 23mΩ
Power dissipation: 3.7W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Produkt ist nicht verfügbar
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DMPH4013SK3Q-13 DMPH4013SK3Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -120A
Drain current: -40A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 23mΩ
Power dissipation: 3.7W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Produkt ist nicht verfügbar
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DMPH4013SPSQ-13 DMPH4013SPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -49A; Idm: -277A; 3.3W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -277A
Drain current: -49A
Drain-source voltage: -40V
Gate charge: 87nC
On-state resistance: 23mΩ
Power dissipation: 3.3W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Produkt ist nicht verfügbar
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DMPH4015SK3-13 DMPH4015SK3.PDF
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -10A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 15mΩ
Power dissipation: 3.3W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Produkt ist nicht verfügbar
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DMPH4015SK3Q-13 DMPH4015SK3Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -10A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 15mΩ
Power dissipation: 3.3W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Produkt ist nicht verfügbar
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DMPH4015SPSQ-13 DMPH4015SPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -100A; 2.6W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -9A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 15mΩ
Power dissipation: 2.6W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Produkt ist nicht verfügbar
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DMPH4015SSSQ-13 DMPH4015SSSQ.pdf
DMPH4015SSSQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -85A
Drain current: -8.1A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 15mΩ
Power dissipation: 1.8W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SO8
Produkt ist nicht verfügbar
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DMPH4023SK3-13 DMPH4023SK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -70A
Drain current: -35A
Drain-source voltage: -40V
Gate charge: 18.7nC
On-state resistance: 26mΩ
Power dissipation: 3.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Produkt ist nicht verfügbar
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DMPH4023SK3Q-13 DMPH4023SK3Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -70A
Drain current: -35A
Drain-source voltage: -40V
Gate charge: 18.7nC
On-state resistance: 26mΩ
Power dissipation: 3.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Produkt ist nicht verfügbar
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DMPH4025SFVWQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -7.3A
Drain-source voltage: -40V
Gate charge: 38.6nC
On-state resistance: 45mΩ
Power dissipation: 2.3W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Produkt ist nicht verfügbar
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DMPH4029LFG-13 DMPH4029LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -88A
Drain current: -6.7A
Drain-source voltage: -40V
Gate charge: 34nC
On-state resistance: 45mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Produkt ist nicht verfügbar
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DMPH4029LFG-7 DMPH4029LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -88A
Drain current: -6.7A
Drain-source voltage: -40V
Gate charge: 34nC
On-state resistance: 45mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Produkt ist nicht verfügbar
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DMPH4029LFGQ-13 DMPH4029LFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -88A
Drain current: -6.7A
Drain-source voltage: -40V
Gate charge: 34nC
On-state resistance: 45mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Produkt ist nicht verfügbar
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DMP4051LK3-13 DMP4051LK3.pdf
DMP4051LK3-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.4A; 8.9W; TO252
Mounting: SMD
Case: TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.4A
On-state resistance: 85mΩ
Power dissipation: 8.9W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 1121 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
191+0.38 EUR
239+0.3 EUR
260+0.28 EUR
500+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 97
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ZTX453 ztx453.pdf
ZTX453
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 40...200
Mounting: THT
Kind of package: bulk
Frequency: 150MHz
Quantity in set/package: 4000pcs.
auf Bestellung 440 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
114+0.63 EUR
174+0.41 EUR
Mindestbestellmenge: 71
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ZTX453STZ ZTX453.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 40...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 150MHz
Produkt ist nicht verfügbar
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AP2204K-2.5TRG1 AP2204_Jan2020.pdf
AP2204K-2.5TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.2A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 2.5V
Output current: 0.2A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2204
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
Integrated circuit features: shutdown mode control input
auf Bestellung 2270 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
325+0.22 EUR
395+0.18 EUR
440+0.16 EUR
500+0.15 EUR
Mindestbestellmenge: 325
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AP2204K-1.5TRG1 AP2204_Jan2020.pdf
AP2204K-1.5TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.2A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 1.5V
Output current: 0.2A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2204
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.6...24V
Integrated circuit features: shutdown mode control input
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AP2204K-2.8TRG1 AP2204_Jan2020.pdf
AP2204K-2.8TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 2.8V
Output current: 0.2A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2204
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.6...24V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
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BCX5216QTA BCX5216Q_BCX5316Q.pdf
BCX5216QTA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Pulsed collector current: 2A
Quantity in set/package: 1000pcs.
Application: automotive industry
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BCX52TA BCX51_52_53.pdf
BCX52TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
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BCX5216TA BCX51_52_53.pdf
BCX5216TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
Produkt ist nicht verfügbar
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