Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (79586) > Seite 1202 nach 1327
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DGD0507AFN-7 | DIODES INCORPORATED |
![]() Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-side Case: WDFN3030-10 Output current: -2...1.5A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 30ns Pulse fall time: 25ns Kind of package: reel; tape Supply voltage: 8...14V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD05463FN-7 | DIODES INCORPORATED |
![]() Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2.5÷1.5A Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-side Case: WDFN3030-10 Output current: -2.5...1.5A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 35ns Pulse fall time: 25ns Kind of package: reel; tape Supply voltage: 4.2...14V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD05473FN-7 | DIODES INCORPORATED |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: VDFN10 Output current: -2.5...1.5A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 30ns Pulse fall time: 25ns Kind of package: reel; tape Supply voltage: 4.2...14V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD05473FNQ-7 | DIODES INCORPORATED |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: U-DFN3030-10 Output current: -2.5...1.5A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 30ns Pulse fall time: 25ns Kind of package: reel; tape Supply voltage: 4.4...14V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD0590AFU-7 | DIODES INCORPORATED |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: VQFN8 Output current: -3...1A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 27ns Pulse fall time: 29ns Kind of package: reel; tape Supply voltage: 4.5...5.5V Anzahl je Verpackung: 1 Stücke |
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DGD1503S8-13 | DIODES INCORPORATED |
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DGD1504S8-13 | DIODES INCORPORATED |
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DGD2003S8-13 | DIODES INCORPORATED |
![]() Description: IC: driver; MOSFET half-bridge; gate driver; SO8; -600÷290mA; Ch: 2 Mounting: SMD Operating temperature: -40...125°C Output current: -600...290mA Type of integrated circuit: driver Number of channels: 2 Supply voltage: 10...20V Kind of package: reel; tape Case: SO8 Kind of integrated circuit: gate driver Topology: MOSFET half-bridge Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD2005S8-13 | DIODES INCORPORATED |
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DGD2101MS8-13 | DIODES INCORPORATED |
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DGD2103MS8-13 | DIODES INCORPORATED |
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DGD2104MS8-13 | DIODES INCORPORATED |
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auf Bestellung 2406 Stücke: Lieferzeit 7-14 Tag (e) |
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DGD2106MS8-13 | DIODES INCORPORATED |
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DGD2110S16-13 | DIODES INCORPORATED |
![]() Description: IC: driver; high-/low-side,gate driver; SO16; -2.5÷2.5A; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Kind of package: reel; tape Mounting: SMD Case: SO16 Operating temperature: -40...125°C Output current: -2.5...2.5A Pulse fall time: 25ns Impulse rise time: 35ns Number of channels: 1 Supply voltage: 3.3...20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD2113S16-13 | DIODES INCORPORATED |
![]() Description: IC: driver; high-/low-side,gate driver; SO16; -2.5÷2.5A; Ch: 1 Kind of package: reel; tape Operating temperature: -40...125°C Output current: -2.5...2.5A Pulse fall time: 25ns Impulse rise time: 35ns Number of channels: 1 Supply voltage: 3.3...20V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Mounting: SMD Case: SO16 Anzahl je Verpackung: 1 Stücke |
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DGD2117S8-13 | DIODES INCORPORATED |
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DGD2136MS28-13 | DIODES INCORPORATED |
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DGD21814S14-13 | DIODES INCORPORATED |
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DGD2181MS8-13 | DIODES INCORPORATED |
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DGD2181S8-13 | DIODES INCORPORATED |
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DGD2184MS8-13 | DIODES INCORPORATED |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A Supply voltage: 10...20V Output current: -2.3...1.9A Type of integrated circuit: driver Impulse rise time: 60ns Pulse fall time: 35ns Number of channels: 1 Kind of package: reel; tape Kind of integrated circuit: gate driver; high-side Topology: IGBT half-bridge; MOSFET half-bridge Mounting: SMD Operating temperature: -40...125°C Case: SO8 Anzahl je Verpackung: 1 Stücke |
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DGD21904MS14-13 | DIODES INCORPORATED |
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DGD2190MS8-13 | DIODES INCORPORATED |
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DGD2304S8-13 | DIODES INCORPORATED |
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DGTD120T25S1PT | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DGTD65T15H2TF | DIODES INCORPORATED |
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auf Bestellung 574 Stücke: Lieferzeit 7-14 Tag (e) |
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DLD101-7 | DIODES INCORPORATED |
![]() Description: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: DFN8 Output current: 0.8A Number of channels: 1 Mounting: SMD Operating voltage: 5...50V DC Integrated circuit features: linear dimming; PWM Topology: single transistor Operating temperature: -40...85°C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DLD101Q-7 | DIODES INCORPORATED |
![]() Description: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: DFN8 Output current: 0.8A Number of channels: 1 Mounting: SMD Operating voltage: 5...50V DC Integrated circuit features: linear dimming; PWM Topology: single transistor Operating temperature: -40...85°C Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2979 Stücke: Lieferzeit 7-14 Tag (e) |
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DLLFSD01LP3-7 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DLP05LC-7-F | DIODES INCORPORATED |
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auf Bestellung 473 Stücke: Lieferzeit 7-14 Tag (e) |
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DLPA006-7 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DM1231-02SO-7 | DIODES INCORPORATED | DM1231-02SO-7 Protection diodes - arrays |
Produkt ist nicht verfügbar |
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DMC1029UFDB-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 12/-12V Type of transistor: N/P-MOSFET Polarisation: unipolar Power dissipation: 1.4W Case: U-DFN2020-6 Mounting: SMD Kind of package: 7 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Gate-source voltage: ±8V Drain current: 3.7/-2.3A On-state resistance: 0.065/0.21Ω Drain-source voltage: 12/-12V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMC1030UFDB-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 12/-12V Type of transistor: N/P-MOSFET Polarisation: unipolar Power dissipation: 1.89W Case: U-DFN2020-6 Mounting: SMD Kind of package: 7 inch reel; tape Gate charge: 23.1/20.8nC Kind of transistor: complementary pair Kind of channel: enhancement Gate-source voltage: ±8V Drain current: 5.1/-3.9A On-state resistance: 34/59mΩ Drain-source voltage: 12/-12V Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMC1030UFDBQ-7 | DIODES INCORPORATED |
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DMC2004DWK-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Kind of channel: enhancement Version: ESD Mounting: SMD Type of transistor: N/P-MOSFET Case: SOT363 Polarisation: unipolar Power dissipation: 0.25W On-state resistance: 0.55/0.9Ω Drain current: 0.43/-0.54A Gate-source voltage: ±8V Drain-source voltage: 20/-20V Kind of package: 7 inch reel; tape Kind of transistor: complementary pair Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC2004LPK-7 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMC2004VK-7 | DIODES INCORPORATED |
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DMC2020USD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Version: ESD Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 6.3/-7.8A On-state resistance: 0.02/0.033Ω Power dissipation: 1.8W Gate-source voltage: ±10V Kind of package: 13 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 480 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC2038LVT-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Kind of transistor: complementary pair Kind of channel: enhancement Mounting: SMD Type of transistor: N/P-MOSFET Case: TSOT26 Polarisation: unipolar On-state resistance: 0.035/0.074Ω Power dissipation: 1.1W Drain current: 3.1/-4.5A Gate-source voltage: ±12V Drain-source voltage: 20/-20V Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 828 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC2038LVTQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Kind of transistor: complementary pair Kind of channel: enhancement Mounting: SMD Type of transistor: N/P-MOSFET Case: TSOT26 Polarisation: unipolar On-state resistance: 0.056/0.168Ω Power dissipation: 0.5W Drain current: 3/-2.1A Gate-source voltage: ±12V Drain-source voltage: 20/-20V Kind of package: 7 inch reel; tape Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1657 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC2400UV-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.8/-0.55A Power dissipation: 0.45W Case: SOT563 Gate-source voltage: ±12V On-state resistance: 0.5/1Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Kind of transistor: complementary pair Anzahl je Verpackung: 1 Stücke |
auf Bestellung 400 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC2450UV-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Polarisation: unipolar Power dissipation: 1W On-state resistance: 1/0.5Ω Drain current: 1.3/-0.7A Gate-source voltage: ±12V Drain-source voltage: 20/-20V Kind of package: 7 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Version: ESD Type of transistor: N/P-MOSFET Mounting: SMD Case: SOT563 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2945 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC2700UDM-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 1.14/-1.34A Power dissipation: 1.12W Case: SOT26 Gate-source voltage: ±6V On-state resistance: 0.4/0.7Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2808 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC2990UDJ-7 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMC2990UDJQ-7 | DIODES INCORPORATED |
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DMC3016LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 8.2/-6.2A On-state resistance: 0.028/0.016Ω Power dissipation: 1.2W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 577 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC3021LK4-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 6.8/-9.4A Power dissipation: 2.75W Case: TO252-4 Gate-source voltage: ±20V On-state resistance: 0.021/0.039Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
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DMC3021LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Mounting: SMD Polarisation: unipolar On-state resistance: 0.021/0.039Ω Power dissipation: 2.5W Drain current: 7/-8.5A Gate-source voltage: ±20V Drain-source voltage: 30/-30V Case: SO8 Kind of package: 13 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2548 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC3025LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 5.5/-8.5A On-state resistance: 0.02/0.045Ω Power dissipation: 1.2W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMC3025LSDQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 5.1/-3.2A Power dissipation: 0.77W Case: SO8 Gate-source voltage: ±20V On-state resistance: 32/85mΩ Mounting: SMD Gate charge: 9.8/10.5nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMC3028LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 7.4/-7.1A On-state resistance: 0.028/0.025Ω Power dissipation: 2.1W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 175 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC3028LSDX-13 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMC3032LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 7/-8.1A On-state resistance: 0.032/0.039Ω Power dissipation: 2.5W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2201 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC3400SDW-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Mounting: SMD Version: ESD Power dissipation: 0.39W On-state resistance: 0.4/0.9Ω Drain current: 0.5/-0.36A Gate-source voltage: ±20V Drain-source voltage: 30/-30V Kind of package: 7 inch reel; tape Kind of transistor: complementary pair Case: SOT363 Kind of channel: enhancement Type of transistor: N/P-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC4015SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Case: SO8 Mounting: SMD Kind of package: 13 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET Polarisation: unipolar On-state resistance: 0.015/0.029Ω Power dissipation: 1.7W Drain current: 9.5/-12.2A Gate-source voltage: ±20V Drain-source voltage: 40/-40V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1656 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC4028SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 5.5/-4.2A On-state resistance: 0.028/0.05Ω Power dissipation: 1.8W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMC4029SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 6.5/-9A On-state resistance: 0.024/0.045Ω Power dissipation: 1.3W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMC4040SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 7.3/-7.5A On-state resistance: 0.04/0.045Ω Power dissipation: 1.8W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 625 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC4040SSDQ-13 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
DGD0507AFN-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Case: WDFN3030-10
Output current: -2...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 8...14V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Case: WDFN3030-10
Output current: -2...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 8...14V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD05463FN-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2.5÷1.5A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Case: WDFN3030-10
Output current: -2.5...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 35ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 4.2...14V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2.5÷1.5A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Case: WDFN3030-10
Output current: -2.5...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 35ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 4.2...14V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD05473FN-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: VDFN10
Output current: -2.5...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 4.2...14V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: VDFN10
Output current: -2.5...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 4.2...14V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD05473FNQ-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: U-DFN3030-10
Output current: -2.5...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 4.4...14V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: U-DFN3030-10
Output current: -2.5...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 4.4...14V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD0590AFU-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: VQFN8
Output current: -3...1A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 27ns
Pulse fall time: 29ns
Kind of package: reel; tape
Supply voltage: 4.5...5.5V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: VQFN8
Output current: -3...1A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 27ns
Pulse fall time: 29ns
Kind of package: reel; tape
Supply voltage: 4.5...5.5V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD1503S8-13 |
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Hersteller: DIODES INCORPORATED
DGD1503S8-13 MOSFET/IGBT drivers
DGD1503S8-13 MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD1504S8-13 |
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Hersteller: DIODES INCORPORATED
DGD1504S8-13 MOSFET/IGBT drivers
DGD1504S8-13 MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD2003S8-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; gate driver; SO8; -600÷290mA; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -600...290mA
Type of integrated circuit: driver
Number of channels: 2
Supply voltage: 10...20V
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: gate driver
Topology: MOSFET half-bridge
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; gate driver; SO8; -600÷290mA; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -600...290mA
Type of integrated circuit: driver
Number of channels: 2
Supply voltage: 10...20V
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: gate driver
Topology: MOSFET half-bridge
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD2005S8-13 |
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Hersteller: DIODES INCORPORATED
DGD2005S8-13 MOSFET/IGBT drivers
DGD2005S8-13 MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD2101MS8-13 |
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Hersteller: DIODES INCORPORATED
DGD2101MS8-13 MOSFET/IGBT drivers
DGD2101MS8-13 MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD2103MS8-13 |
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Hersteller: DIODES INCORPORATED
DGD2103MS8-13 MOSFET/IGBT drivers
DGD2103MS8-13 MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD2104MS8-13 |
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Hersteller: DIODES INCORPORATED
DGD2104MS8-13 MOSFET/IGBT drivers
DGD2104MS8-13 MOSFET/IGBT drivers
auf Bestellung 2406 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.07 EUR |
65+ | 1.1 EUR |
69+ | 1.04 EUR |
500+ | 1 EUR |
DGD2106MS8-13 |
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Hersteller: DIODES INCORPORATED
DGD2106MS8-13 MOSFET/IGBT drivers
DGD2106MS8-13 MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD2110S16-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; SO16; -2.5÷2.5A; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Kind of package: reel; tape
Mounting: SMD
Case: SO16
Operating temperature: -40...125°C
Output current: -2.5...2.5A
Pulse fall time: 25ns
Impulse rise time: 35ns
Number of channels: 1
Supply voltage: 3.3...20V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; SO16; -2.5÷2.5A; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Kind of package: reel; tape
Mounting: SMD
Case: SO16
Operating temperature: -40...125°C
Output current: -2.5...2.5A
Pulse fall time: 25ns
Impulse rise time: 35ns
Number of channels: 1
Supply voltage: 3.3...20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD2113S16-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; SO16; -2.5÷2.5A; Ch: 1
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -2.5...2.5A
Pulse fall time: 25ns
Impulse rise time: 35ns
Number of channels: 1
Supply voltage: 3.3...20V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Mounting: SMD
Case: SO16
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; SO16; -2.5÷2.5A; Ch: 1
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -2.5...2.5A
Pulse fall time: 25ns
Impulse rise time: 35ns
Number of channels: 1
Supply voltage: 3.3...20V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Mounting: SMD
Case: SO16
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD2117S8-13 |
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Hersteller: DIODES INCORPORATED
DGD2117S8-13 MOSFET/IGBT drivers
DGD2117S8-13 MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD2136MS28-13 |
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Hersteller: DIODES INCORPORATED
DGD2136MS28-13 MOSFET/IGBT drivers
DGD2136MS28-13 MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD21814S14-13 |
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Hersteller: DIODES INCORPORATED
DGD21814S14-13 MOSFET/IGBT drivers
DGD21814S14-13 MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD2181MS8-13 |
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Hersteller: DIODES INCORPORATED
DGD2181MS8-13 MOSFET/IGBT drivers
DGD2181MS8-13 MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD2181S8-13 |
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Hersteller: DIODES INCORPORATED
DGD2181S8-13 MOSFET/IGBT drivers
DGD2181S8-13 MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD2184MS8-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Supply voltage: 10...20V
Output current: -2.3...1.9A
Type of integrated circuit: driver
Impulse rise time: 60ns
Pulse fall time: 35ns
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-side
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Supply voltage: 10...20V
Output current: -2.3...1.9A
Type of integrated circuit: driver
Impulse rise time: 60ns
Pulse fall time: 35ns
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-side
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD21904MS14-13 |
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Hersteller: DIODES INCORPORATED
DGD21904MS14-13 MOSFET/IGBT drivers
DGD21904MS14-13 MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD2190MS8-13 |
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Hersteller: DIODES INCORPORATED
DGD2190MS8-13 MOSFET/IGBT drivers
DGD2190MS8-13 MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD2304S8-13 |
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Hersteller: DIODES INCORPORATED
DGD2304S8-13 MOSFET/IGBT drivers
DGD2304S8-13 MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGTD120T25S1PT |
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Hersteller: DIODES INCORPORATED
DGTD120T25S1PT THT IGBT transistors
DGTD120T25S1PT THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGTD65T15H2TF |
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Hersteller: DIODES INCORPORATED
DGTD65T15H2TF THT IGBT transistors
DGTD65T15H2TF THT IGBT transistors
auf Bestellung 574 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.89 EUR |
54+ | 1.33 EUR |
57+ | 1.26 EUR |
DLD101-7 |
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Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: DFN8
Output current: 0.8A
Number of channels: 1
Mounting: SMD
Operating voltage: 5...50V DC
Integrated circuit features: linear dimming; PWM
Topology: single transistor
Operating temperature: -40...85°C
Anzahl je Verpackung: 1 Stücke
Category: LED drivers
Description: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: DFN8
Output current: 0.8A
Number of channels: 1
Mounting: SMD
Operating voltage: 5...50V DC
Integrated circuit features: linear dimming; PWM
Topology: single transistor
Operating temperature: -40...85°C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DLD101Q-7 |
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Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: DFN8
Output current: 0.8A
Number of channels: 1
Mounting: SMD
Operating voltage: 5...50V DC
Integrated circuit features: linear dimming; PWM
Topology: single transistor
Operating temperature: -40...85°C
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: LED drivers
Description: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: DFN8
Output current: 0.8A
Number of channels: 1
Mounting: SMD
Operating voltage: 5...50V DC
Integrated circuit features: linear dimming; PWM
Topology: single transistor
Operating temperature: -40...85°C
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2979 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
80+ | 0.9 EUR |
202+ | 0.35 EUR |
229+ | 0.31 EUR |
DLLFSD01LP3-7 |
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Hersteller: DIODES INCORPORATED
DLLFSD01LP3-7 SMD universal diodes
DLLFSD01LP3-7 SMD universal diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DLP05LC-7-F |
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Hersteller: DIODES INCORPORATED
DLP05LC-7-F Unidirectional TVS SMD diodes
DLP05LC-7-F Unidirectional TVS SMD diodes
auf Bestellung 473 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
177+ | 0.4 EUR |
473+ | 0.16 EUR |
3000+ | 0.13 EUR |
DLPA006-7 |
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Hersteller: DIODES INCORPORATED
DLPA006-7 Protection diodes - arrays
DLPA006-7 Protection diodes - arrays
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DM1231-02SO-7 |
Hersteller: DIODES INCORPORATED
DM1231-02SO-7 Protection diodes - arrays
DM1231-02SO-7 Protection diodes - arrays
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC1029UFDB-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 12/-12V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 1.4W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±8V
Drain current: 3.7/-2.3A
On-state resistance: 0.065/0.21Ω
Drain-source voltage: 12/-12V
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 12/-12V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 1.4W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±8V
Drain current: 3.7/-2.3A
On-state resistance: 0.065/0.21Ω
Drain-source voltage: 12/-12V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC1030UFDB-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 12/-12V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 1.89W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Gate charge: 23.1/20.8nC
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±8V
Drain current: 5.1/-3.9A
On-state resistance: 34/59mΩ
Drain-source voltage: 12/-12V
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 12/-12V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 1.89W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Gate charge: 23.1/20.8nC
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±8V
Drain current: 5.1/-3.9A
On-state resistance: 34/59mΩ
Drain-source voltage: 12/-12V
Version: ESD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC1030UFDBQ-7 |
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Hersteller: DIODES INCORPORATED
DMC1030UFDBQ-7 SMD N channel transistors
DMC1030UFDBQ-7 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC2004DWK-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SOT363
Polarisation: unipolar
Power dissipation: 0.25W
On-state resistance: 0.55/0.9Ω
Drain current: 0.43/-0.54A
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Kind of package: 7 inch reel; tape
Kind of transistor: complementary pair
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SOT363
Polarisation: unipolar
Power dissipation: 0.25W
On-state resistance: 0.55/0.9Ω
Drain current: 0.43/-0.54A
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Kind of package: 7 inch reel; tape
Kind of transistor: complementary pair
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
176+ | 0.41 EUR |
224+ | 0.32 EUR |
338+ | 0.21 EUR |
358+ | 0.2 EUR |
500+ | 0.19 EUR |
DMC2004LPK-7 |
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Hersteller: DIODES INCORPORATED
DMC2004LPK-7 Multi channel transistors
DMC2004LPK-7 Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC2004VK-7 |
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Hersteller: DIODES INCORPORATED
DMC2004VK-7 Multi channel transistors
DMC2004VK-7 Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC2020USD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Version: ESD
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 6.3/-7.8A
On-state resistance: 0.02/0.033Ω
Power dissipation: 1.8W
Gate-source voltage: ±10V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Version: ESD
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 6.3/-7.8A
On-state resistance: 0.02/0.033Ω
Power dissipation: 1.8W
Gate-source voltage: ±10V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 480 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
66+ | 1.09 EUR |
88+ | 0.82 EUR |
177+ | 0.4 EUR |
187+ | 0.38 EUR |
1000+ | 0.37 EUR |
DMC2038LVT-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Kind of transistor: complementary pair
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: TSOT26
Polarisation: unipolar
On-state resistance: 0.035/0.074Ω
Power dissipation: 1.1W
Drain current: 3.1/-4.5A
Gate-source voltage: ±12V
Drain-source voltage: 20/-20V
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Kind of transistor: complementary pair
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: TSOT26
Polarisation: unipolar
On-state resistance: 0.035/0.074Ω
Power dissipation: 1.1W
Drain current: 3.1/-4.5A
Gate-source voltage: ±12V
Drain-source voltage: 20/-20V
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 828 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
212+ | 0.34 EUR |
302+ | 0.24 EUR |
350+ | 0.2 EUR |
603+ | 0.12 EUR |
642+ | 0.11 EUR |
DMC2038LVTQ-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Kind of transistor: complementary pair
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: TSOT26
Polarisation: unipolar
On-state resistance: 0.056/0.168Ω
Power dissipation: 0.5W
Drain current: 3/-2.1A
Gate-source voltage: ±12V
Drain-source voltage: 20/-20V
Kind of package: 7 inch reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Kind of transistor: complementary pair
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: TSOT26
Polarisation: unipolar
On-state resistance: 0.056/0.168Ω
Power dissipation: 0.5W
Drain current: 3/-2.1A
Gate-source voltage: ±12V
Drain-source voltage: 20/-20V
Kind of package: 7 inch reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1657 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
127+ | 0.56 EUR |
147+ | 0.49 EUR |
407+ | 0.18 EUR |
432+ | 0.17 EUR |
3000+ | 0.16 EUR |
DMC2400UV-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.8/-0.55A
Power dissipation: 0.45W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 0.5/1Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.8/-0.55A
Power dissipation: 0.45W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 0.5/1Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
Anzahl je Verpackung: 1 Stücke
auf Bestellung 400 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
258+ | 0.28 EUR |
295+ | 0.24 EUR |
400+ | 0.17 EUR |
500+ | 0.14 EUR |
651+ | 0.11 EUR |
DMC2450UV-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Polarisation: unipolar
Power dissipation: 1W
On-state resistance: 1/0.5Ω
Drain current: 1.3/-0.7A
Gate-source voltage: ±12V
Drain-source voltage: 20/-20V
Kind of package: 7 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Version: ESD
Type of transistor: N/P-MOSFET
Mounting: SMD
Case: SOT563
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Polarisation: unipolar
Power dissipation: 1W
On-state resistance: 1/0.5Ω
Drain current: 1.3/-0.7A
Gate-source voltage: ±12V
Drain-source voltage: 20/-20V
Kind of package: 7 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Version: ESD
Type of transistor: N/P-MOSFET
Mounting: SMD
Case: SOT563
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2945 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
136+ | 0.53 EUR |
165+ | 0.43 EUR |
194+ | 0.37 EUR |
311+ | 0.23 EUR |
382+ | 0.19 EUR |
658+ | 0.11 EUR |
695+ | 0.1 EUR |
DMC2700UDM-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 1.14/-1.34A
Power dissipation: 1.12W
Case: SOT26
Gate-source voltage: ±6V
On-state resistance: 0.4/0.7Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 1.14/-1.34A
Power dissipation: 1.12W
Case: SOT26
Gate-source voltage: ±6V
On-state resistance: 0.4/0.7Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2808 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
218+ | 0.33 EUR |
264+ | 0.27 EUR |
379+ | 0.19 EUR |
685+ | 0.1 EUR |
848+ | 0.084 EUR |
893+ | 0.08 EUR |
DMC2990UDJ-7 |
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Hersteller: DIODES INCORPORATED
DMC2990UDJ-7 Multi channel transistors
DMC2990UDJ-7 Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC2990UDJQ-7 |
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Hersteller: DIODES INCORPORATED
DMC2990UDJQ-7 SMD N channel transistors
DMC2990UDJQ-7 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC3016LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 8.2/-6.2A
On-state resistance: 0.028/0.016Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 8.2/-6.2A
On-state resistance: 0.028/0.016Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 577 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
128+ | 0.56 EUR |
280+ | 0.26 EUR |
296+ | 0.24 EUR |
2500+ | 0.23 EUR |
DMC3021LK4-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 6.8/-9.4A
Power dissipation: 2.75W
Case: TO252-4
Gate-source voltage: ±20V
On-state resistance: 0.021/0.039Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 2500 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 6.8/-9.4A
Power dissipation: 2.75W
Case: TO252-4
Gate-source voltage: ±20V
On-state resistance: 0.021/0.039Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC3021LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.021/0.039Ω
Power dissipation: 2.5W
Drain current: 7/-8.5A
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
Case: SO8
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.021/0.039Ω
Power dissipation: 2.5W
Drain current: 7/-8.5A
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
Case: SO8
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2548 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
91+ | 0.79 EUR |
113+ | 0.64 EUR |
133+ | 0.54 EUR |
152+ | 0.47 EUR |
269+ | 0.27 EUR |
286+ | 0.25 EUR |
2500+ | 0.24 EUR |
DMC3025LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.5/-8.5A
On-state resistance: 0.02/0.045Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.5/-8.5A
On-state resistance: 0.02/0.045Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC3025LSDQ-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 5.1/-3.2A
Power dissipation: 0.77W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 32/85mΩ
Mounting: SMD
Gate charge: 9.8/10.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 5.1/-3.2A
Power dissipation: 0.77W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 32/85mΩ
Mounting: SMD
Gate charge: 9.8/10.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC3028LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.4/-7.1A
On-state resistance: 0.028/0.025Ω
Power dissipation: 2.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.4/-7.1A
On-state resistance: 0.028/0.025Ω
Power dissipation: 2.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 175 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
87+ | 0.83 EUR |
122+ | 0.59 EUR |
175+ | 0.41 EUR |
2500+ | 0.25 EUR |
DMC3028LSDX-13 |
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Hersteller: DIODES INCORPORATED
DMC3028LSDX-13 Multi channel transistors
DMC3028LSDX-13 Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC3032LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7/-8.1A
On-state resistance: 0.032/0.039Ω
Power dissipation: 2.5W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7/-8.1A
On-state resistance: 0.032/0.039Ω
Power dissipation: 2.5W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2201 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
97+ | 0.74 EUR |
128+ | 0.56 EUR |
321+ | 0.22 EUR |
341+ | 0.21 EUR |
2500+ | 0.2 EUR |
DMC3400SDW-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Version: ESD
Power dissipation: 0.39W
On-state resistance: 0.4/0.9Ω
Drain current: 0.5/-0.36A
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
Kind of package: 7 inch reel; tape
Kind of transistor: complementary pair
Case: SOT363
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Version: ESD
Power dissipation: 0.39W
On-state resistance: 0.4/0.9Ω
Drain current: 0.5/-0.36A
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
Kind of package: 7 inch reel; tape
Kind of transistor: complementary pair
Case: SOT363
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
207+ | 0.34 EUR |
567+ | 0.13 EUR |
3000+ | 0.074 EUR |
DMC4015SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
On-state resistance: 0.015/0.029Ω
Power dissipation: 1.7W
Drain current: 9.5/-12.2A
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
On-state resistance: 0.015/0.029Ω
Power dissipation: 1.7W
Drain current: 9.5/-12.2A
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1656 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.44 EUR |
98+ | 0.73 EUR |
117+ | 0.61 EUR |
124+ | 0.58 EUR |
128+ | 0.56 EUR |
DMC4028SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 5.5/-4.2A
On-state resistance: 0.028/0.05Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 5.5/-4.2A
On-state resistance: 0.028/0.05Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC4029SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 6.5/-9A
On-state resistance: 0.024/0.045Ω
Power dissipation: 1.3W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 6.5/-9A
On-state resistance: 0.024/0.045Ω
Power dissipation: 1.3W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC4040SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 7.3/-7.5A
On-state resistance: 0.04/0.045Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 7.3/-7.5A
On-state resistance: 0.04/0.045Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 625 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
52+ | 1.4 EUR |
77+ | 0.94 EUR |
151+ | 0.47 EUR |
160+ | 0.45 EUR |
1000+ | 0.43 EUR |
DMC4040SSDQ-13 |
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Hersteller: DIODES INCORPORATED
DMC4040SSDQ-13 SMD N channel transistors
DMC4040SSDQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH