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AZ431LARTR-G1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LAZTR-E1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LBKTR-G1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LBNTR-E1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LBZTR-G1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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ZXTD718MCTA ZXTD718MCTA DIODES INCORPORATED ZXTD718MC.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 3.5A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 3.5A
Power dissipation: 2.45W
Case: DFN3020B-8
Pulsed collector current: 6A
Current gain: 15...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...180MHz
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500+0.45 EUR
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SMBJ5.0AQ-13-F DIODES INCORPORATED Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.23V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.23V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Application: automotive industry
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DPLS350E-13 DIODES INCORPORATED ds31230.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1W; SOT223
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Power dissipation: 1W
Collector current: 3A
Pulsed collector current: 5A
Collector-emitter voltage: 50V
Current gain: 100...200
Quantity in set/package: 2500pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
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BC857BSQ-7-F BC857BSQ-7-F DIODES INCORPORATED ds30373.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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SMBJ30CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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DPLS160-7 DIODES INCORPORATED ds31389.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.3W
Case: SOT23
Pulsed collector current: 2A
Current gain: 100...325
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...220MHz
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DPLS160V-7 DIODES INCORPORATED ds31251.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 300mW; SOT563
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.3W
Case: SOT563
Pulsed collector current: 2A
Current gain: 100...325
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...220MHz
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ES3BB-13-F ES3BB-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE985819C4B2E9878BF&compId=ES3x_ES3xB.pdf?ci_sign=bbc971ad2c666e0fafd28a26eff929f9f2d9aefd Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMB; Ufmax: 0.9V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
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196+0.37 EUR
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ES3B-13-F DIODES INCORPORATED ds14003.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMC; Ufmax: 900mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 0.9V
Kind of package: reel; tape
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GBJ2010-F DIODES INCORPORATED GBJ20005%7EGBJ2010.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 240A
Electrical mounting: THT
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 20A
Max. forward impulse current: 0.24kA
Max. off-state voltage: 1kV
Version: flat
Leads: flat pin
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RS1JDFQ-13 DIODES INCORPORATED RS1JDFQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; D-FLAT; Ufmax: 1.3V
Mounting: SMD
Application: automotive industry
Case: D-FLAT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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FRS1JE DIODES INCORPORATED FRS1JE.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO219AA; Ufmax: 1.3V
Mounting: SMD
Case: DO219AA
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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MMBTA63-7-F MMBTA63-7-F DIODES INCORPORATED ds30055.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Current gain: 5000...10000
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Kind of transistor: Darlington
Quantity in set/package: 3000pcs.
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838+0.085 EUR
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MMBTA64-7-F DIODES INCORPORATED ds30055.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Current gain: 10000...20000
Frequency: 125MHz
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SMAJ15AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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DXT2907A-13 DIODES INCORPORATED ds30944.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Pulsed collector current: 0.8A
Quantity in set/package: 2500pcs.
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SMBJ36AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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FZT653QTA DIODES INCORPORATED FZT653Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 3W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140...175MHz
Current gain: 25...300
Pulsed collector current: 6A
Application: automotive industry
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SBR20100CT DIODES INCORPORATED SBR20100CT%20N0911%20REV.A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 150A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
Technology: SBR®
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SBR20100CT-G DIODES INCORPORATED SBR20100.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 150A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
Technology: SBR®
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SBR20100CTFP DIODES INCORPORATED SBR20100.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 150A; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
Technology: SBR®
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SBR20A60CTB DIODES INCORPORATED SBR20A60CT_CTB_CTFP.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; SBR®; tube
Case: D2PAK
Mounting: SMD
Kind of package: tube
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 60V
Semiconductor structure: common cathode; double
Type of diode: rectifying
Technology: SBR®
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SBR20A60CTBQ-13 DIODES INCORPORATED SBR20A60CTBQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; Ufmax: 790mV; SBR®
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Max. forward voltage: 0.79V
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 60V
Semiconductor structure: common cathode; double
Type of diode: rectifying
Technology: SBR®
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SBR20A60CTFP DIODES INCORPORATED SBR20A60CT_CTB_CTFP.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 10Ax2; tube; Ifsm: 180A; ITO220AB; SBR®
Case: ITO220AB
Mounting: THT
Kind of package: tube
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 60V
Max. forward impulse current: 180A
Semiconductor structure: common cathode; double
Type of diode: rectifying
Technology: SBR®
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SMBJ30AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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SMBJ24AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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FMMT558QTA FMMT558QTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986AC9E62AF7978BF&compId=FMMT558.pdf?ci_sign=b8f509e86752ba26b9313c887dac3914a0b3869b Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23
Case: SOT23
Collector current: 0.15A
Power dissipation: 0.5W
Current gain: 15...300
Collector-emitter voltage: 400V
Quantity in set/package: 3000pcs.
Frequency: 50MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
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FMMTA42TA FMMTA42TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA4DA1303E90D20D6&compId=FMMTA42.pdf?ci_sign=0f407f16b47547f7b3d2a46babda81b20e5c48ef Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 350mW; SOT23
Case: SOT23
Collector current: 0.2A
Power dissipation: 0.35W
Collector-emitter voltage: 300V
Quantity in set/package: 3000pcs.
Frequency: 50MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
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FMMT634QTA DIODES INCORPORATED FMMT634Q.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.9A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.9A
Power dissipation: 0.806W
Case: SOT23
Current gain: 0.6k...60k
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Pulsed collector current: 5A
Application: automotive industry
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BAW56DW-7-F DIODES INCORPORATED ds30146.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAW56DWQ-7-F DIODES INCORPORATED ds30146.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAW56HDW-13 DIODES INCORPORATED BAW56HDW.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAW56HDWQ-13 DIODES INCORPORATED BAW56HDWQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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RS1MDFQ-13 DIODES INCORPORATED RS1MDFQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; D-FLAT; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: D-FLAT
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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RS1MEWFQ-7 DIODES INCORPORATED RS1MEWFQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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FRS1ME-7 DIODES INCORPORATED FRS1ME.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO219AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: DO219AA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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FRS1MEQ-7 DIODES INCORPORATED FRS1MEQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO219AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: DO219AA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MMDT2222A-7-F DIODES INCORPORATED ds30125.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Frequency: 300MHz
Current gain: 35...300
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMBJ18CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMBJ15CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷19.2V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5A
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DXT2222A-13 DIODES INCORPORATED DXT2222A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Mounting: SMD
Frequency: 300MHz
Pulsed collector current: 0.8A
Current gain: 35...300
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DZT2222A-13 DIODES INCORPORATED ds30481.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 830mW; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.83W
Case: SOT223
Mounting: SMD
Frequency: 300MHz
Current gain: 35...300
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMAJ24CA-13-F SMAJ24CA-13-F DIODES INCORPORATED SMAJ5.0CA-SMAJ200CA.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMAJ24CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ULN2002AS16-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDFAAE0FE318FF3E0D6&compId=ULN200xA.pdf?ci_sign=b483eb8926ced65e8c451ebaf3cfd9e9f5e5f87a Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...105°C
Application: for inductive load
Input voltage: 30V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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P6SMAJ26ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DMC2038LVT-7 DMC2038LVT-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B3693C22231BF&compId=DMC2038LVT-7.pdf?ci_sign=4537bfeb30579b43a5c636b126c347ecd8e8c93d Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.1/-4.5A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.035/0.074Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 3063 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
298+0.24 EUR
317+0.23 EUR
435+0.16 EUR
516+0.14 EUR
715+0.1 EUR
1000+0.099 EUR
Mindestbestellmenge: 278
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BCP5510TA BCP5510TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BD9B26063B93D1&compId=BCP54_55_56.pdf?ci_sign=66bdad1e68e52d13d809cbbbb1660d4a6af0e046 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 260 Stücke:
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260+0.27 EUR
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DMG2305UX-7 DMG2305UX-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FA30F091E90748&compId=DMG2305UX.pdf?ci_sign=b2aee761d96502e454a9031a06ee1790bb085110 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.3A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2493 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
633+0.11 EUR
784+0.091 EUR
867+0.083 EUR
1078+0.066 EUR
1180+0.061 EUR
Mindestbestellmenge: 500
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PAM2305AABADJ PAM2305AABADJ DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE98693F079AAD9D8BF&compId=PAM2305.pdf?ci_sign=7da08b3002ef5fb133e8e77a67b0ce132becac42 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; 1A; TSOT25; SMD; 1.5MHz
Operating temperature: -40...85°C
Output current: 1A
Input voltage: 2.5...5.5V DC
Efficiency: 96%
Frequency: 1.5MHz
Case: TSOT25
Topology: buck
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Type of integrated circuit: PMIC
Kind of package: reel; tape
auf Bestellung 322 Stücke:
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143+0.5 EUR
203+0.35 EUR
228+0.31 EUR
241+0.3 EUR
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SMBJ15AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷19.2V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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DDTC114EUAQ-7-F DIODES INCORPORATED ds30321.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 30
Quantity in set/package: 3000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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BCX5316QTA DIODES INCORPORATED BCX5216Q_BCX5316Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Pulsed collector current: 2A
Application: automotive industry
Produkt ist nicht verfügbar
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BZT52C5V1Q-7-F DIODES INCORPORATED ds18004.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123
Power dissipation: 0.37W
Tolerance: ±6%
Zener voltage: 5.1V
Kind of package: reel; tape
Application: automotive industry
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BCP5116TA BCP5116TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BE8BF6648EB3D1&compId=BCP51_52_53.pdf?ci_sign=1f476166495eb1ef6d1f0c1463062ec5a9900d09 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 100...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 701 Stücke:
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157+0.46 EUR
221+0.32 EUR
376+0.19 EUR
701+0.1 EUR
Mindestbestellmenge: 157
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AZ431LARTR-G1 AZ431L.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AZ431LAZTR-E1 AZ431L.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AZ431LBKTR-G1 AZ431L.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AZ431LBNTR-E1 AZ431L.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LBZTR-G1 AZ431L.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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ZXTD718MCTA ZXTD718MC.pdf
ZXTD718MCTA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 3.5A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 3.5A
Power dissipation: 2.45W
Case: DFN3020B-8
Pulsed collector current: 6A
Current gain: 15...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...180MHz
auf Bestellung 2676 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
87+0.82 EUR
123+0.58 EUR
500+0.45 EUR
Mindestbestellmenge: 77
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SMBJ5.0AQ-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.23V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.23V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Application: automotive industry
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DPLS350E-13 ds31230.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1W; SOT223
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Power dissipation: 1W
Collector current: 3A
Pulsed collector current: 5A
Collector-emitter voltage: 50V
Current gain: 100...200
Quantity in set/package: 2500pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
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BC857BSQ-7-F ds30373.pdf
BC857BSQ-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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SMBJ30CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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DPLS160-7 ds31389.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.3W
Case: SOT23
Pulsed collector current: 2A
Current gain: 100...325
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...220MHz
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DPLS160V-7 ds31251.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 300mW; SOT563
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.3W
Case: SOT563
Pulsed collector current: 2A
Current gain: 100...325
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...220MHz
Produkt ist nicht verfügbar
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ES3BB-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE985819C4B2E9878BF&compId=ES3x_ES3xB.pdf?ci_sign=bbc971ad2c666e0fafd28a26eff929f9f2d9aefd
ES3BB-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMB; Ufmax: 0.9V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
auf Bestellung 1476 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
151+0.47 EUR
167+0.43 EUR
196+0.37 EUR
250+0.32 EUR
500+0.29 EUR
1000+0.28 EUR
Mindestbestellmenge: 100
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ES3B-13-F ds14003.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMC; Ufmax: 900mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 0.9V
Kind of package: reel; tape
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GBJ2010-F GBJ20005%7EGBJ2010.pdf
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 240A
Electrical mounting: THT
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 20A
Max. forward impulse current: 0.24kA
Max. off-state voltage: 1kV
Version: flat
Leads: flat pin
Produkt ist nicht verfügbar
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RS1JDFQ-13 RS1JDFQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; D-FLAT; Ufmax: 1.3V
Mounting: SMD
Application: automotive industry
Case: D-FLAT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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FRS1JE FRS1JE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO219AA; Ufmax: 1.3V
Mounting: SMD
Case: DO219AA
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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MMBTA63-7-F ds30055.pdf
MMBTA63-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Current gain: 5000...10000
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Kind of transistor: Darlington
Quantity in set/package: 3000pcs.
auf Bestellung 2729 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
486+0.15 EUR
838+0.085 EUR
1217+0.059 EUR
1409+0.051 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
MMBTA64-7-F ds30055.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Current gain: 10000...20000
Frequency: 125MHz
Produkt ist nicht verfügbar
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SMAJ15AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DXT2907A-13 ds30944.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Pulsed collector current: 0.8A
Quantity in set/package: 2500pcs.
Produkt ist nicht verfügbar
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SMBJ36AQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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FZT653QTA FZT653Q.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 3W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140...175MHz
Current gain: 25...300
Pulsed collector current: 6A
Application: automotive industry
Produkt ist nicht verfügbar
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SBR20100CT SBR20100CT%20N0911%20REV.A.pdf
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 150A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
Technology: SBR®
Produkt ist nicht verfügbar
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SBR20100CT-G SBR20100.pdf
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 150A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
Technology: SBR®
Produkt ist nicht verfügbar
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SBR20100CTFP SBR20100.pdf
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 150A; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
Technology: SBR®
Produkt ist nicht verfügbar
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SBR20A60CTB SBR20A60CT_CTB_CTFP.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; SBR®; tube
Case: D2PAK
Mounting: SMD
Kind of package: tube
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 60V
Semiconductor structure: common cathode; double
Type of diode: rectifying
Technology: SBR®
Produkt ist nicht verfügbar
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SBR20A60CTBQ-13 SBR20A60CTBQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; Ufmax: 790mV; SBR®
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Max. forward voltage: 0.79V
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 60V
Semiconductor structure: common cathode; double
Type of diode: rectifying
Technology: SBR®
Produkt ist nicht verfügbar
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SBR20A60CTFP SBR20A60CT_CTB_CTFP.pdf
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 10Ax2; tube; Ifsm: 180A; ITO220AB; SBR®
Case: ITO220AB
Mounting: THT
Kind of package: tube
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 60V
Max. forward impulse current: 180A
Semiconductor structure: common cathode; double
Type of diode: rectifying
Technology: SBR®
Produkt ist nicht verfügbar
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SMBJ30AQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ24AQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FMMT558QTA pVersion=0046&contRep=ZT&docId=005056AB82531EE986AC9E62AF7978BF&compId=FMMT558.pdf?ci_sign=b8f509e86752ba26b9313c887dac3914a0b3869b
FMMT558QTA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23
Case: SOT23
Collector current: 0.15A
Power dissipation: 0.5W
Current gain: 15...300
Collector-emitter voltage: 400V
Quantity in set/package: 3000pcs.
Frequency: 50MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
auf Bestellung 1693 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
116+0.62 EUR
136+0.53 EUR
243+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
FMMTA42TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA4DA1303E90D20D6&compId=FMMTA42.pdf?ci_sign=0f407f16b47547f7b3d2a46babda81b20e5c48ef
FMMTA42TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 350mW; SOT23
Case: SOT23
Collector current: 0.2A
Power dissipation: 0.35W
Collector-emitter voltage: 300V
Quantity in set/package: 3000pcs.
Frequency: 50MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
auf Bestellung 3030 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
329+0.22 EUR
512+0.14 EUR
715+0.1 EUR
1000+0.088 EUR
3000+0.074 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
FMMT634QTA FMMT634Q.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.9A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.9A
Power dissipation: 0.806W
Case: SOT23
Current gain: 0.6k...60k
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Pulsed collector current: 5A
Application: automotive industry
Produkt ist nicht verfügbar
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BAW56DW-7-F ds30146.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAW56DWQ-7-F ds30146.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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BAW56HDW-13 BAW56HDW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAW56HDWQ-13 BAW56HDWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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RS1MDFQ-13 RS1MDFQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; D-FLAT; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: D-FLAT
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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RS1MEWFQ-7 RS1MEWFQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FRS1ME-7 FRS1ME.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO219AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: DO219AA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FRS1MEQ-7 FRS1MEQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO219AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: DO219AA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MMDT2222A-7-F ds30125.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Frequency: 300MHz
Current gain: 35...300
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMBJ18CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ15CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷19.2V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5A
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DXT2222A-13 DXT2222A.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Mounting: SMD
Frequency: 300MHz
Pulsed collector current: 0.8A
Current gain: 35...300
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DZT2222A-13 ds30481.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 830mW; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.83W
Case: SOT223
Mounting: SMD
Frequency: 300MHz
Current gain: 35...300
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMAJ24CA-13-F SMAJ5.0CA-SMAJ200CA.pdf
SMAJ24CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ24CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ULN2002AS16-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFAAE0FE318FF3E0D6&compId=ULN200xA.pdf?ci_sign=b483eb8926ced65e8c451ebaf3cfd9e9f5e5f87a
Hersteller: DIODES INCORPORATED
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...105°C
Application: for inductive load
Input voltage: 30V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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P6SMAJ26ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DMC2038LVT-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B3693C22231BF&compId=DMC2038LVT-7.pdf?ci_sign=4537bfeb30579b43a5c636b126c347ecd8e8c93d
DMC2038LVT-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.1/-4.5A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.035/0.074Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 3063 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
298+0.24 EUR
317+0.23 EUR
435+0.16 EUR
516+0.14 EUR
715+0.1 EUR
1000+0.099 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
BCP5510TA pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BD9B26063B93D1&compId=BCP54_55_56.pdf?ci_sign=66bdad1e68e52d13d809cbbbb1660d4a6af0e046
BCP5510TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 260 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
260+0.27 EUR
Mindestbestellmenge: 260
Im Einkaufswagen  Stück im Wert von  UAH
DMG2305UX-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FA30F091E90748&compId=DMG2305UX.pdf?ci_sign=b2aee761d96502e454a9031a06ee1790bb085110
DMG2305UX-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.3A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2493 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
633+0.11 EUR
784+0.091 EUR
867+0.083 EUR
1078+0.066 EUR
1180+0.061 EUR
Mindestbestellmenge: 500
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PAM2305AABADJ pVersion=0046&contRep=ZT&docId=005056AB82531EE98693F079AAD9D8BF&compId=PAM2305.pdf?ci_sign=7da08b3002ef5fb133e8e77a67b0ce132becac42
PAM2305AABADJ
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; 1A; TSOT25; SMD; 1.5MHz
Operating temperature: -40...85°C
Output current: 1A
Input voltage: 2.5...5.5V DC
Efficiency: 96%
Frequency: 1.5MHz
Case: TSOT25
Topology: buck
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Type of integrated circuit: PMIC
Kind of package: reel; tape
auf Bestellung 322 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
203+0.35 EUR
228+0.31 EUR
241+0.3 EUR
Mindestbestellmenge: 143
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SMBJ15AQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷19.2V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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DDTC114EUAQ-7-F ds30321.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 30
Quantity in set/package: 3000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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BCX5316QTA BCX5216Q_BCX5316Q.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Pulsed collector current: 2A
Application: automotive industry
Produkt ist nicht verfügbar
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BZT52C5V1Q-7-F ds18004.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123
Power dissipation: 0.37W
Tolerance: ±6%
Zener voltage: 5.1V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BCP5116TA pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BE8BF6648EB3D1&compId=BCP51_52_53.pdf?ci_sign=1f476166495eb1ef6d1f0c1463062ec5a9900d09
BCP5116TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 100...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 701 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
221+0.32 EUR
376+0.19 EUR
701+0.1 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
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