ZVNL120A

Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.18A; Idm: 2A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.18A
Pulsed drain current: 2A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement

Hersteller: Diodes Incorporated
Description: MOSFET N-CH 200V 180MA TO92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Part Status: Active
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole

Hersteller: Diodes Incorporated
MOSFETs N-Chnl 200V