Weitere Produktangebote ZVNL120A nach Preis ab 0.49 EUR bis 2.76 EUR
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ZVNL120A | Diodes Zetex |
 Trans MOSFET N-CH 200V 0.18A 3-Pin E-Line |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZVNL120A | Diodes Zetex |
Trans MOSFET N-CH 200V 0.18A 3-Pin E-Line |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZVNL120A | Diodes Incorporated |
MOSFETs N-Chnl 200V |
auf Bestellung 4065 Stücke: Lieferzeit 10-14 Tag (e) |
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ZVNL120A | Diodes Incorporated |
Description: MOSFET N-CH 200V 180MA TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TO-92 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V |
auf Bestellung 5386 Stücke: Lieferzeit 10-14 Tag (e) |
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ZVNL120A | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.18A; Idm: 2A; 0.7W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.18A Pulsed drain current: 2A Power dissipation: 0.7W Case: TO92 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement |
auf Bestellung 1970 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| ZVNL120A |
|
Hersteller: Diodes Zetex
Trans MOSFET N-CH 200V 0.18A 3-Pin E-Line
Trans MOSFET N-CH 200V 0.18A 3-Pin E-Line
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.49 EUR |
| ZVNL120A |
|
Hersteller: Diodes Zetex
Trans MOSFET N-CH 200V 0.18A 3-Pin E-Line
Trans MOSFET N-CH 200V 0.18A 3-Pin E-Line
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.54 EUR |
| ZVNL120A |
|
Hersteller: Diodes Incorporated
MOSFETs N-Chnl 200V
MOSFETs N-Chnl 200V
auf Bestellung 4065 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2 EUR |
| 10+ | 1.34 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.65 EUR |
| 2000+ | 0.64 EUR |
| 4000+ | 0.54 EUR |
| ZVNL120A |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 200V 180MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TO-92
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Description: MOSFET N-CH 200V 180MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TO-92
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
auf Bestellung 5386 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.76 EUR |
| 13+ | 1.75 EUR |
| 25+ | 1.46 EUR |
| 50+ | 1.3 EUR |
| 100+ | 1.15 EUR |
| ZVNL120A |
|
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.18A; Idm: 2A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.18A
Pulsed drain current: 2A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.18A; Idm: 2A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.18A
Pulsed drain current: 2A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
auf Bestellung 1970 Stücke:
Lieferzeit 14-21 Tag (e)