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SMBJ20CA-13-F SMBJ20CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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459+0.16 EUR
582+0.12 EUR
667+0.11 EUR
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SMBJ20CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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KBP304G DIODES INCORPORATED KBP304G-KBP310G.pdf KBP3005G%20THRU%20KBP310G%20N1917%20REV.A.pdf kbp302g.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 3A; Ifsm: 90A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 3A
Max. forward impulse current: 90A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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MMBTA55-7-F MMBTA55-7-F DIODES INCORPORATED MMBTA55_MMBTA56.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 500mA; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Quantity in set/package: 3000pcs.
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ZVN4206GVTA DIODES INCORPORATED ZVN4206GV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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DMG1012T-13 DMG1012T-13 DIODES INCORPORATED DMG1012TQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 450mA; Idm: 3A; 280mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.45A
Power dissipation: 0.28W
Case: SOT523
Gate-source voltage: ±6V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 736.6pC
Pulsed drain current: 3A
Produkt ist nicht verfügbar
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RS1MSWFM-7 DIODES INCORPORATED RS1MSWFM.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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US1MDF-13 DIODES INCORPORATED US1JDF.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
Produkt ist nicht verfügbar
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FUS1ME DIODES INCORPORATED FUS1ME.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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FES1JE DIODES INCORPORATED FES1JE.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Application: automotive industry
Produkt ist nicht verfügbar
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S5MC-13-F S5MC-13-F DIODES INCORPORATED S5AC_ser.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A
Mounting: SMD
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 40pF
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Load current: 5A
Max. off-state voltage: 1kV
Kind of package: reel; tape
Case: SMC
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201+0.36 EUR
260+0.28 EUR
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S8MC-13
+1
 		S8MC-13 DIODES INCORPORATED ds31117.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 8A; SMC; Ufmax: 0.985V; Ifsm: 200A
Mounting: SMD
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 45pF
Max. forward voltage: 0.985V
Max. forward impulse current: 200A
Load current: 8A
Max. off-state voltage: 1kV
Kind of package: reel; tape
Case: SMC
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158+0.46 EUR
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BCM857BS-7-F BCM857BS-7-F DIODES INCORPORATED BCM857BS.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363
Power dissipation: 0.2W
Mounting: SMD
Kind of package: reel; tape
Case: SOT363
Type of transistor: PNP x2
Collector current: 0.1A
Collector-emitter voltage: 45V
Current gain: 220...475
Quantity in set/package: 3000pcs.
Frequency: 100MHz
Polarisation: bipolar
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SB550-T SB550-T DIODES INCORPORATED SB520_ser.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 5A; DO201AD; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.67V
Max. forward impulse current: 150A
Kind of package: reel; tape
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PD3S140-7 DIODES INCORPORATED ds30862.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 32pF
Max. forward voltage: 0.55V
Leakage current: 50µA
Max. forward impulse current: 22A
Kind of package: reel; tape
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BCV46TA DIODES INCORPORATED BCV26.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Pulsed collector current: 0.8A
Current gain: 2000...10000
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
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BAT54AWQ-13-F DIODES INCORPORATED SWQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
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DMN2044UCB4-7 DIODES INCORPORATED DMN2044UCB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 16A; 1.18W
Mounting: SMD
Case: U-WLB1010-4
Gate charge: 47nC
On-state resistance: 70mΩ
Power dissipation: 1.18W
Drain current: 3.6A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Pulsed drain current: 16A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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90+0.8 EUR
124+0.58 EUR
151+0.48 EUR
186+0.38 EUR
500+0.29 EUR
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DMN1054UCB4-7 DIODES INCORPORATED DMN1054UCB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 8V; 3.2A; Idm: 8A; 1.34W
Mounting: SMD
Case: X1-WLB0808-4
Gate charge: 15nC
On-state resistance: 0.11Ω
Power dissipation: 1.34W
Drain current: 3.2A
Gate-source voltage: ±5V
Drain-source voltage: 8V
Pulsed drain current: 8A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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DMN2023UCB4-7 DIODES INCORPORATED DMN2023UCB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 4.8A; Idm: 20A; 1.45W
Mounting: SMD
Case: X1-WLB1818-4
Gate charge: 37nC
On-state resistance: 40mΩ
Power dissipation: 1.45W
Drain current: 4.8A
Gate-source voltage: ±12V
Drain-source voltage: 24V
Pulsed drain current: 20A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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DMN2036UCB4-7 DIODES INCORPORATED DMN2036UCB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 4A; Idm: 30A; 1.45W
Mounting: SMD
Case: X2-WLB1616-4
Gate charge: 12.6nC
On-state resistance: 52mΩ
Power dissipation: 1.45W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 24V
Pulsed drain current: 30A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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MMBD4148W-7-F DIODES INCORPORATED MMBD4148W_BAS16W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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MMBD4148TW-7-F DIODES INCORPORATED ds30154.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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MMBD4148PLM-7 DIODES INCORPORATED MMBD4148PLM.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; U-DFN1616-6; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; fivefold
Case: U-DFN1616-6
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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SBR8U60P5-13 SBR8U60P5-13 DIODES INCORPORATED SBR8U60P5.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 8A; PowerDI®5; Ufmax: 0.46V; Ifsm: 280A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Case: PowerDI®5
Max. forward voltage: 0.46V
Max. forward impulse current: 280A
Technology: SBR®
Kind of package: reel; tape
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94+0.76 EUR
122+0.59 EUR
250+0.54 EUR
500+0.5 EUR
1000+0.47 EUR
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Mindestbestellmenge: 62
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AP2280-1WG-7 AP2280-1WG-7 DIODES INCORPORATED AP2280.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: SOT25
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
Kind of output: P-Channel
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AP2280-1FMG-7 AP2280-1FMG-7 DIODES INCORPORATED AP2280.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 80mΩ
Supply voltage: 1.5...6V DC
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
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170+0.42 EUR
198+0.36 EUR
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AP22804ASN-7 DIODES INCORPORATED AP22804-14.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of output: P-Channel
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AP22804BSN-7 DIODES INCORPORATED AP22804-14.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Kind of output: P-Channel
Produkt ist nicht verfügbar
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AP2280-2FMG-7 DIODES INCORPORATED AP2280.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
Kind of output: P-Channel
Produkt ist nicht verfügbar
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AP22804AM8-13 DIODES INCORPORATED AP22804-14.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Mounting: SMD
Case: MSOP8
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of output: P-Channel
Produkt ist nicht verfügbar
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AP22804BM8-13 DIODES INCORPORATED AP22804_14.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Mounting: SMD
Case: MSOP8
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Kind of output: P-Channel
Produkt ist nicht verfügbar
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AP22804BW5-7 AP22804BW5-7 DIODES INCORPORATED AP22804-14.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Mounting: SMD
Case: SOT25
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Kind of output: P-Channel
Produkt ist nicht verfügbar
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GBJ1504-F DIODES INCORPORATED ds21219.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 15A
Max. forward impulse current: 0.24kA
Version: flat
Case: GBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SBR2045CT-G DIODES INCORPORATED SBR2045.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; tube; Ifsm: 120A; TO220AB; SBR®
Type of diode: rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 120A
Technology: SBR®
Max. load current: 20A
Produkt ist nicht verfügbar
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DPS1135FIA-13 DIODES INCORPORATED DPS1135.pdf Category: Power switches - integrated circuits
Description: IC: power switch; USB switch; 5A; Ch: 1; SMD; VQFN17; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: USB switch
Output current: 5A
Number of channels: 1
Mounting: SMD
Case: VQFN17
On-state resistance: 36mΩ
Kind of package: reel; tape
Supply voltage: 4...24V DC
Active logical level: high
Operating temperature: -40...125°C
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SMBJ200A-13-F DIODES INCORPORATED ds19002.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 224÷247V; 1.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 200V
Breakdown voltage: 224...247V
Max. forward impulse current: 1.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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B340AX-13 DIODES INCORPORATED B340AX.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD
Type of diode: Schottky rectifying
Mounting: SMD
Produkt ist nicht verfügbar
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FES1GE DIODES INCORPORATED FES1GE.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
Produkt ist nicht verfügbar
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SDT30100CTFP DIODES INCORPORATED SDT30100CT-SDT30100CTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15A; Ufmax: 750mV; Ir: 100uA
Semiconductor structure: common cathode
Mounting: THT
Type of diode: Schottky rectifying
Leakage current: 0.1mA
Max. forward voltage: 0.75V
Load current: 15A
Max. off-state voltage: 100V
Max. forward impulse current: 200A
auf Bestellung 200 Stücke:
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109+0.66 EUR
122+0.59 EUR
132+0.54 EUR
138+0.52 EUR
Mindestbestellmenge: 109
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MMSZ5226BS-7-F MMSZ5226BS-7-F DIODES INCORPORATED mmsz52xxbs_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 5654 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
658+0.11 EUR
820+0.087 EUR
1334+0.054 EUR
3000+0.032 EUR
Mindestbestellmenge: 455
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B220A-13-F B220A-13-F DIODES INCORPORATED B220A_B260A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.5V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 20V
auf Bestellung 1015 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
266+0.27 EUR
290+0.25 EUR
404+0.18 EUR
417+0.17 EUR
468+0.15 EUR
521+0.14 EUR
1000+0.12 EUR
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ZRC330F01TA ZRC330F01TA DIODES INCORPORATED ZRC330.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 5mA
Type of integrated circuit: voltage reference source
Reference voltage: 3.3V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 5mA
auf Bestellung 2867 Stücke:
Lieferzeit 14-21 Tag (e)
67+1.07 EUR
88+0.82 EUR
97+0.74 EUR
104+0.69 EUR
110+0.65 EUR
250+0.61 EUR
500+0.59 EUR
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ABS210-13 DIODES INCORPORATED ABS210.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; SOPA4
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 60A
Case: SOPA4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
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BSS138-13-F DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.3W
Case: SOT23
On-state resistance: 3.5Ω
Mounting: SMD
Produkt ist nicht verfügbar
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P4SMAJ15ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMBJ40CA-13-F SMBJ40CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷51.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1540 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
491+0.15 EUR
544+0.13 EUR
618+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 417
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DMG1023UV-7 DMG1023UV-7 DIODES INCORPORATED DMG1023UV.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.68A; 0.53W; SOT563; ESD
Kind of package: 7 inch reel; tape
Case: SOT563
Type of transistor: P-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -680mA
On-state resistance: 25Ω
Power dissipation: 0.53W
Gate-source voltage: ±6V
Kind of channel: enhancement
Version: ESD
auf Bestellung 557 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
166+0.43 EUR
194+0.37 EUR
338+0.21 EUR
500+0.15 EUR
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DMG1026UV-7 DMG1026UV-7 DIODES INCORPORATED DMG1026UV.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; Idm: 1A; 0.58W; SOT563
Kind of package: 7 inch reel; tape
Case: SOT563
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 1A
Drain current: 0.3A
On-state resistance: 1.8Ω
Power dissipation: 0.58W
Gate-source voltage: ±20V
Kind of channel: enhancement
Version: ESD
auf Bestellung 823 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
190+0.38 EUR
269+0.27 EUR
315+0.23 EUR
500+0.16 EUR
Mindestbestellmenge: 129
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AP2301AFGE-7 AP2301AFGE-7 DIODES INCORPORATED AP23x1A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN3030-8
On-state resistance: 70mΩ
Supply voltage: 2.7...5.5V DC
Active logical level: low
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
auf Bestellung 2320 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
237+0.3 EUR
266+0.27 EUR
283+0.25 EUR
Mindestbestellmenge: 167
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DII74LVC1G04QSE7 DIODES INCORPORATED Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.072 EUR
Mindestbestellmenge: 3000
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SMBJ26A-13-F SMBJ26A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 1357 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
275+0.26 EUR
327+0.22 EUR
443+0.16 EUR
715+0.1 EUR
782+0.092 EUR
Mindestbestellmenge: 228
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SMBJ26AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZT52C3V0-7-F BZT52C3V0-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 5442 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
794+0.09 EUR
969+0.074 EUR
1345+0.053 EUR
1916+0.037 EUR
2184+0.033 EUR
3000+0.027 EUR
Mindestbestellmenge: 625
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MMBTA56Q-7-F DIODES INCORPORATED MMBTA55Q_MMBTA56Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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FES1DEQ-7 DIODES INCORPORATED FES1DEQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
Produkt ist nicht verfügbar
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SMAJ28CA-13-F SMAJ28CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 6260 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
388+0.18 EUR
747+0.096 EUR
782+0.092 EUR
1000+0.087 EUR
5000+0.079 EUR
Mindestbestellmenge: 264
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SMAJ28CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMCJ24A-13-F SMCJ24A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2339 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
174+0.41 EUR
Mindestbestellmenge: 157
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SMCJ24AQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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SMBJ20CA-13-F SMBJ_ser.pdf
SMBJ20CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2868 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
459+0.16 EUR
582+0.12 EUR
667+0.11 EUR
Mindestbestellmenge: 358
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SMBJ20CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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KBP304G KBP304G-KBP310G.pdf KBP3005G%20THRU%20KBP310G%20N1917%20REV.A.pdf kbp302g.pdf
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 3A; Ifsm: 90A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 3A
Max. forward impulse current: 90A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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MMBTA55-7-F MMBTA55_MMBTA56.pdf
MMBTA55-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 500mA; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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ZVN4206GVTA ZVN4206GV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMG1012T-13 DMG1012TQ.pdf
DMG1012T-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 450mA; Idm: 3A; 280mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.45A
Power dissipation: 0.28W
Case: SOT523
Gate-source voltage: ±6V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 736.6pC
Pulsed drain current: 3A
Produkt ist nicht verfügbar
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RS1MSWFM-7 RS1MSWFM.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
Produkt ist nicht verfügbar
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US1MDF-13 US1JDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
Produkt ist nicht verfügbar
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FUS1ME FUS1ME.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
Produkt ist nicht verfügbar
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FES1JE FES1JE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Application: automotive industry
Produkt ist nicht verfügbar
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S5MC-13-F S5AC_ser.pdf
S5MC-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A
Mounting: SMD
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 40pF
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Load current: 5A
Max. off-state voltage: 1kV
Kind of package: reel; tape
Case: SMC
auf Bestellung 2393 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
187+0.38 EUR
201+0.36 EUR
260+0.28 EUR
500+0.22 EUR
1000+0.21 EUR
Mindestbestellmenge: 148
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S8MC-13 ds31117.pdf
S8MC-13
+1
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 8A; SMC; Ufmax: 0.985V; Ifsm: 200A
Mounting: SMD
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 45pF
Max. forward voltage: 0.985V
Max. forward impulse current: 200A
Load current: 8A
Max. off-state voltage: 1kV
Kind of package: reel; tape
Case: SMC
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
158+0.46 EUR
Mindestbestellmenge: 139
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BCM857BS-7-F BCM857BS.pdf
BCM857BS-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363
Power dissipation: 0.2W
Mounting: SMD
Kind of package: reel; tape
Case: SOT363
Type of transistor: PNP x2
Collector current: 0.1A
Collector-emitter voltage: 45V
Current gain: 220...475
Quantity in set/package: 3000pcs.
Frequency: 100MHz
Polarisation: bipolar
auf Bestellung 547 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
547+0.13 EUR
Mindestbestellmenge: 455
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SB550-T SB520_ser.pdf
SB550-T
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 5A; DO201AD; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.67V
Max. forward impulse current: 150A
Kind of package: reel; tape
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
104+0.69 EUR
116+0.62 EUR
167+0.43 EUR
Mindestbestellmenge: 82
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PD3S140-7 ds30862.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 32pF
Max. forward voltage: 0.55V
Leakage current: 50µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BCV46TA BCV26.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Pulsed collector current: 0.8A
Current gain: 2000...10000
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
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BAT54AWQ-13-F SWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
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DMN2044UCB4-7 DMN2044UCB4.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 16A; 1.18W
Mounting: SMD
Case: U-WLB1010-4
Gate charge: 47nC
On-state resistance: 70mΩ
Power dissipation: 1.18W
Drain current: 3.6A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Pulsed drain current: 16A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
124+0.58 EUR
151+0.48 EUR
186+0.38 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
DMN1054UCB4-7 DMN1054UCB4.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 8V; 3.2A; Idm: 8A; 1.34W
Mounting: SMD
Case: X1-WLB0808-4
Gate charge: 15nC
On-state resistance: 0.11Ω
Power dissipation: 1.34W
Drain current: 3.2A
Gate-source voltage: ±5V
Drain-source voltage: 8V
Pulsed drain current: 8A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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DMN2023UCB4-7 DMN2023UCB4.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 4.8A; Idm: 20A; 1.45W
Mounting: SMD
Case: X1-WLB1818-4
Gate charge: 37nC
On-state resistance: 40mΩ
Power dissipation: 1.45W
Drain current: 4.8A
Gate-source voltage: ±12V
Drain-source voltage: 24V
Pulsed drain current: 20A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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DMN2036UCB4-7 DMN2036UCB4.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 4A; Idm: 30A; 1.45W
Mounting: SMD
Case: X2-WLB1616-4
Gate charge: 12.6nC
On-state resistance: 52mΩ
Power dissipation: 1.45W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 24V
Pulsed drain current: 30A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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MMBD4148W-7-F MMBD4148W_BAS16W.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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MMBD4148TW-7-F ds30154.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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MMBD4148PLM-7 MMBD4148PLM.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; U-DFN1616-6; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; fivefold
Case: U-DFN1616-6
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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SBR8U60P5-13 SBR8U60P5.pdf
SBR8U60P5-13
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 8A; PowerDI®5; Ufmax: 0.46V; Ifsm: 280A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Case: PowerDI®5
Max. forward voltage: 0.46V
Max. forward impulse current: 280A
Technology: SBR®
Kind of package: reel; tape
auf Bestellung 2614 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
94+0.76 EUR
122+0.59 EUR
250+0.54 EUR
500+0.5 EUR
1000+0.47 EUR
2000+0.43 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
AP2280-1WG-7 AP2280.pdf
AP2280-1WG-7
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: SOT25
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
Kind of output: P-Channel
Produkt ist nicht verfügbar
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AP2280-1FMG-7 AP2280.pdf
AP2280-1FMG-7
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 80mΩ
Supply voltage: 1.5...6V DC
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
auf Bestellung 767 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
156+0.46 EUR
170+0.42 EUR
198+0.36 EUR
250+0.32 EUR
500+0.29 EUR
Mindestbestellmenge: 109
Im Einkaufswagen  Stück im Wert von  UAH
AP22804ASN-7 AP22804-14.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of output: P-Channel
Produkt ist nicht verfügbar
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AP22804BSN-7 AP22804-14.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Kind of output: P-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AP2280-2FMG-7 AP2280.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
Kind of output: P-Channel
Produkt ist nicht verfügbar
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AP22804AM8-13 AP22804-14.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Mounting: SMD
Case: MSOP8
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of output: P-Channel
Produkt ist nicht verfügbar
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AP22804BM8-13 AP22804_14.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Mounting: SMD
Case: MSOP8
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Kind of output: P-Channel
Produkt ist nicht verfügbar
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AP22804BW5-7 AP22804-14.pdf
AP22804BW5-7
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Mounting: SMD
Case: SOT25
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Kind of output: P-Channel
Produkt ist nicht verfügbar
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GBJ1504-F ds21219.pdf
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 15A
Max. forward impulse current: 0.24kA
Version: flat
Case: GBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SBR2045CT-G SBR2045.pdf
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; tube; Ifsm: 120A; TO220AB; SBR®
Type of diode: rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 120A
Technology: SBR®
Max. load current: 20A
Produkt ist nicht verfügbar
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DPS1135FIA-13 DPS1135.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; USB switch; 5A; Ch: 1; SMD; VQFN17; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: USB switch
Output current: 5A
Number of channels: 1
Mounting: SMD
Case: VQFN17
On-state resistance: 36mΩ
Kind of package: reel; tape
Supply voltage: 4...24V DC
Active logical level: high
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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SMBJ200A-13-F ds19002.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 224÷247V; 1.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 200V
Breakdown voltage: 224...247V
Max. forward impulse current: 1.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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B340AX-13 B340AX.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD
Type of diode: Schottky rectifying
Mounting: SMD
Produkt ist nicht verfügbar
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FES1GE FES1GE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
Produkt ist nicht verfügbar
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SDT30100CTFP SDT30100CT-SDT30100CTFP.pdf
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15A; Ufmax: 750mV; Ir: 100uA
Semiconductor structure: common cathode
Mounting: THT
Type of diode: Schottky rectifying
Leakage current: 0.1mA
Max. forward voltage: 0.75V
Load current: 15A
Max. off-state voltage: 100V
Max. forward impulse current: 200A
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
122+0.59 EUR
132+0.54 EUR
138+0.52 EUR
Mindestbestellmenge: 109
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5226BS-7-F mmsz52xxbs_ser.pdf
MMSZ5226BS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 5654 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
658+0.11 EUR
820+0.087 EUR
1334+0.054 EUR
3000+0.032 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
B220A-13-F B220A_B260A.pdf
B220A-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.5V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 20V
auf Bestellung 1015 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
266+0.27 EUR
290+0.25 EUR
404+0.18 EUR
417+0.17 EUR
468+0.15 EUR
521+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
ZRC330F01TA ZRC330.pdf
ZRC330F01TA
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 5mA
Type of integrated circuit: voltage reference source
Reference voltage: 3.3V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 5mA
auf Bestellung 2867 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
88+0.82 EUR
97+0.74 EUR
104+0.69 EUR
110+0.65 EUR
250+0.61 EUR
500+0.59 EUR
Mindestbestellmenge: 67
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ABS210-13 ABS210.pdf
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; SOPA4
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 60A
Case: SOPA4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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BSS138-13-F
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.3W
Case: SOT23
On-state resistance: 3.5Ω
Mounting: SMD
Produkt ist nicht verfügbar
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P4SMAJ15ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMBJ40CA-13-F SMBJ_ser.pdf
SMBJ40CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷51.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1540 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
491+0.15 EUR
544+0.13 EUR
618+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
DMG1023UV-7 DMG1023UV.pdf
DMG1023UV-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.68A; 0.53W; SOT563; ESD
Kind of package: 7 inch reel; tape
Case: SOT563
Type of transistor: P-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -680mA
On-state resistance: 25Ω
Power dissipation: 0.53W
Gate-source voltage: ±6V
Kind of channel: enhancement
Version: ESD
auf Bestellung 557 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
166+0.43 EUR
194+0.37 EUR
338+0.21 EUR
500+0.15 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
DMG1026UV-7 DMG1026UV.pdf
DMG1026UV-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; Idm: 1A; 0.58W; SOT563
Kind of package: 7 inch reel; tape
Case: SOT563
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 1A
Drain current: 0.3A
On-state resistance: 1.8Ω
Power dissipation: 0.58W
Gate-source voltage: ±20V
Kind of channel: enhancement
Version: ESD
auf Bestellung 823 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
190+0.38 EUR
269+0.27 EUR
315+0.23 EUR
500+0.16 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
AP2301AFGE-7 AP23x1A.pdf
AP2301AFGE-7
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN3030-8
On-state resistance: 70mΩ
Supply voltage: 2.7...5.5V DC
Active logical level: low
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
auf Bestellung 2320 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
237+0.3 EUR
266+0.27 EUR
283+0.25 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
DII74LVC1G04QSE7
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.072 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ26A-13-F SMBJ_ser.pdf
SMBJ26A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 1357 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
275+0.26 EUR
327+0.22 EUR
443+0.16 EUR
715+0.1 EUR
782+0.092 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ26AQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZT52C3V0-7-F BZT52Cxx_ser.pdf
BZT52C3V0-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 5442 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
794+0.09 EUR
969+0.074 EUR
1345+0.053 EUR
1916+0.037 EUR
2184+0.033 EUR
3000+0.027 EUR
Mindestbestellmenge: 625
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MMBTA56Q-7-F MMBTA55Q_MMBTA56Q.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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FES1DEQ-7 FES1DEQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
Produkt ist nicht verfügbar
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SMAJ28CA-13-F SMAJ_ser.pdf
SMAJ28CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 6260 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
388+0.18 EUR
747+0.096 EUR
782+0.092 EUR
1000+0.087 EUR
5000+0.079 EUR
Mindestbestellmenge: 264
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SMAJ28CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMCJ24A-13-F SMCJ_ser.pdf
SMCJ24A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2339 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
174+0.41 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ24AQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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