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DMN6075S-7 DMN6075S-7 DIODES INCORPORATED DMN6075S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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ZXMN6A07FTA ZXMN6A07FTA DIODES INCORPORATED ZXMN6A07F.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 6.9A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.1A
Pulsed drain current: 6.9A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 1.65nC
Kind of package: reel; tape
Kind of channel: enhancement
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DMN62D0U-7 DMN62D0U-7 DIODES INCORPORATED DMN62D0U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.38W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.38W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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SMCJ26A-13-F SMCJ26A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 35.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 35.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ22A-13-F SMBJ22A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ22AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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SMAJ20CA-13-F SMAJ20CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Max. off-state voltage: 20V
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.4kW
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
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SMAJ20CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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AP5100WG-7 AP5100WG-7 DIODES INCORPORATED AP5100-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷24VDC; Uout: 0.81÷15VDC; 1.2A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...24V DC
Output voltage: 0.81...15V DC
Output current: 1.2A
Case: SOT26
Mounting: SMD
Frequency: 1.4MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 90%
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SMAJ15A-13-F SMAJ15A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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SMAJ14A-13-F SMAJ14A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ13CA-13-F SMBJ13CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷16.5V; 27.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 27.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMAJ13CA-13-F SMAJ13CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DMG9933USD-13 DMG9933USD-13 DIODES INCORPORATED DMG9933USD.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -20A
Drain current: -3A
Gate charge: 6.5nC
On-state resistance: 0.11Ω
Power dissipation: 1.15W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
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DMP3056LSD-13 DMP3056LSD-13 DIODES INCORPORATED DMP3056LSD.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.1A; 2.5W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.1A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP3085LSD-13 DMP3085LSD-13 DIODES INCORPORATED DMP3085LSD.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Pulsed drain current: -20A
Drain-source voltage: -30V
Drain current: -3.1A
On-state resistance: 70mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMC4040SSD-13 DMC4040SSD-13 DIODES INCORPORATED DMC4040SSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 7.3/-7.5A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.04/0.045Ω
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DMHC3025LSD-13 DMHC3025LSD-13 DIODES INCORPORATED DMHC3025LSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; complementary pair; 30/-30V; 1.5W
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.5W
Gate charge: 11.7/11.4nC
Polarisation: unipolar
Drain current: 6/-4.2A
Kind of channel: enhancement
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 25/50mΩ
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DMN6040SSD-13 DMN6040SSD-13 DIODES INCORPORATED DMN6040SSD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
On-state resistance: 55mΩ
Power dissipation: 0.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMG4800LSD-13 DMG4800LSD-13 DIODES INCORPORATED DMG4800LSD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SO8
On-state resistance: 22mΩ
Power dissipation: 1.5W
Drain current: 8.4A
Gate-source voltage: ±25V
Drain-source voltage: 30V
Kind of package: 13 inch reel; tape
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DMP2040USD-13 DMP2040USD-13 DIODES INCORPORATED DMP2040USD.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -30A; 1.6W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -30A
Drain-source voltage: -20V
Drain current: -5A
Gate charge: 19nC
On-state resistance: 52mΩ
Power dissipation: 1.6W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
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500+0.26 EUR
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DMP6050SSD-13 DMP6050SSD-13 DIODES INCORPORATED DMP6050SSD.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8
Mounting: SMD
Pulsed drain current: -32A
Power dissipation: 1.2W
Polarisation: unipolar
Drain current: -3.9A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET x2
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 55mΩ
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DMC4050SSD-13 DMC4050SSD-13 DIODES INCORPORATED DMC4050SSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 5.8/-5.5A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 45/45mΩ
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BZX84B27-7-F DIODES INCORPORATED BZX84Bxx(x).pdf BZX84Bxxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 27V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
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FMMT549TA DIODES INCORPORATED FMMT549.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100MHz
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FMMT549ATA DIODES INCORPORATED FMMT549.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...500
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100MHz
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DMNH4015SSD-13 DMNH4015SSD-13 DIODES INCORPORATED DMNH4015SSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMNH4015SSDQ-13 DMNH4015SSDQ-13 DIODES INCORPORATED DMNH4015SSDQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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BZX84C3V9TS-7-F BZX84C3V9TS-7-F DIODES INCORPORATED BZX84CxxTS_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
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BZX84C3V9W-7-F BZX84C3V9W-7-F DIODES INCORPORATED BZX84CxxW_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
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74LVC2G17DW-7 74LVC2G17DW-7 DIODES INCORPORATED 74LVC2G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; SOT363; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of package: reel; tape
Case: SOT363
Family: LVC
Number of channels: 2
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74LVC2G17FX4-7 DIODES INCORPORATED 74LVC2G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1409-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of package: reel; tape
Case: X2-DFN1409-6
Family: LVC
Number of channels: 2
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74LVC2G17FW4-7 DIODES INCORPORATED 74LVC2G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1010-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of package: reel; tape
Case: X2-DFN1010-6
Family: LVC
Number of channels: 2
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74LVC2G17FZ4-7 DIODES INCORPORATED 74LVC2G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of package: reel; tape
Case: X2-DFN1410-6
Family: LVC
Number of channels: 2
Produkt ist nicht verfügbar
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SMBJ7.0A-13-F SMBJ7.0A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.78÷8.95V; 50A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.95V
Max. forward impulse current: 50A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ36CA-13-F SMAJ36CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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SMAJ36CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
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74AHC1G126SE-7 74AHC1G126SE-7 DIODES INCORPORATED 74AHC1G126.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; AHC
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT353
Quiescent current: 40µA
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Manufacturer series: AHC
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS
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500+0.17 EUR
676+0.13 EUR
770+0.11 EUR
913+0.093 EUR
1127+0.075 EUR
1238+0.069 EUR
1303+0.065 EUR
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APX811-46UG-7 DIODES INCORPORATED APX811_812.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Mounting: SMD
Kind of package: reel; tape
Active logical level: low
Integrated circuit features: manual reset
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Case: SOT143
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Number of channels: 1
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 4.63V
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BZX84B11-7-F BZX84B11-7-F DIODES INCORPORATED BZX84Bxxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 11V; SMD; SOT23; reel,tape; single diode
Kind of package: reel; tape
Case: SOT23
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±2%
Zener voltage: 11V
Semiconductor structure: single diode
Mounting: SMD
auf Bestellung 3000 Stücke:
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625+0.13 EUR
834+0.1 EUR
926+0.092 EUR
1348+0.063 EUR
1684+0.05 EUR
1825+0.046 EUR
3000+0.042 EUR
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APX803L20-23SA-7 DIODES INCORPORATED APX803L.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Case: SOT23
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 220ms
Supply voltage: 0.9...5.5V DC
Number of channels: 1
Threshold on-voltage: 2.3V
Integrated circuit features: ±1,5% accuracy
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BZX84C15-13-F BZX84C15-13-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 3640 Stücke:
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2780+0.031 EUR
3120+0.027 EUR
3440+0.025 EUR
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DDZX15-13 DIODES INCORPORATED ds30408.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Type of diode: Zener
Power dissipation: 0.3W
Tolerance: ±2.5%
Zener voltage: 15V
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AP7115-15SEG-7 DIODES INCORPORATED AP7115.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT353; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7115
Input voltage: 2.5...5.5V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Output voltage: 1.5V
Kind of package: reel; tape
Case: SOT353
Number of channels: 1
Tolerance: ±2%
auf Bestellung 2440 Stücke:
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495+0.18 EUR
760+0.11 EUR
865+0.099 EUR
965+0.088 EUR
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TLV271CW5-7 DIODES INCORPORATED TLV27x.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; Ch: 1; Uoper: 2.7÷16V; SOT25; 110dB
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Number of channels: 1
Mounting: SMT
Case: SOT25
Operating temperature: 0...70°C
Integrated circuit features: rail-to-rail output
Input offset voltage: 5mV
Operating voltage: 2.7...16V
Slew rate: 2V/μs
Power dissipation: 0.22W
Open-loop gain: 110dB
Kind of package: reel; tape
auf Bestellung 1809 Stücke:
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228+0.37 EUR
288+0.3 EUR
321+0.26 EUR
374+0.23 EUR
451+0.19 EUR
486+0.18 EUR
500+0.17 EUR
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TLV271IW5-7 TLV271IW5-7 DIODES INCORPORATED TLV27x.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; Ch: 1; Uoper: 2.7÷16V; SOT25; 110dB
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Number of channels: 1
Mounting: SMT
Case: SOT25
Operating temperature: -40...125°C
Integrated circuit features: rail-to-rail output
Input offset voltage: 5mV
Operating voltage: 2.7...16V
Slew rate: 2V/μs
Power dissipation: 0.22W
Open-loop gain: 110dB
Kind of package: reel; tape
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AP3031KTR-G1 AP3031KTR-G1 DIODES INCORPORATED AP3031%20Datasheet.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷16VDC; Uout: 37VDC; 1.4A; SOT23-6
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...16V DC
Output voltage: 37V DC
Output current: 1.4A
Case: SOT23-6
Mounting: SMD
Frequency: 1MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Integrated circuit features: PWM
Efficiency: 92%
Application: for LED applications
auf Bestellung 3000 Stücke:
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209+0.4 EUR
258+0.33 EUR
296+0.29 EUR
355+0.24 EUR
428+0.2 EUR
435+0.19 EUR
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AP3012KTR-E1 AP3012KTR-E1 DIODES INCORPORATED AP3012-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.6÷16VDC; Uout: 1.25÷29VDC; 0.5A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.6...16V DC
Output voltage: 1.25...29V DC
Output current: 0.5A
Case: SOT23-5
Mounting: SMD
Frequency: 1.5MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 85%
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132+0.64 EUR
162+0.52 EUR
182+0.46 EUR
210+0.4 EUR
249+0.35 EUR
269+0.32 EUR
500+0.3 EUR
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AP3012KTR-G1 AP3012KTR-G1 DIODES INCORPORATED AP3012-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.6÷16VDC; Uout: 1.25÷29VDC; 0.5A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.6...16V DC
Output voltage: 1.25...29V DC
Output current: 0.5A
Case: SOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 85%
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FZT749TA FZT749TA DIODES INCORPORATED FZT749.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Frequency: 160MHz
Kind of package: reel; tape
Current gain: 75...570
Quantity in set/package: 1000pcs.
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FZT749TC DIODES INCORPORATED FZT749.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 2W; SOT223-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-3
Mounting: SMD
Frequency: 160MHz
Produkt ist nicht verfügbar
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BCW68HTA BCW68HTA DIODES INCORPORATED BCW68H.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.31W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 1000pcs.
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DESD5V0S1BLD-7B DIODES INCORPORATED DESD5V0S1BLD.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 12A; bidirectional; DFN1006-2; reel,tape
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 0.1µA
Max. forward impulse current: 12A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
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PDS1040-13 DIODES INCORPORATED PDS1040.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Leakage current: 50mA
Max. forward impulse current: 275A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PDS1040L-13 DIODES INCORPORATED ds30486.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 275A
Kind of package: reel; tape
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PDS1040CTL-13 DIODES INCORPORATED ds30485.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 40V
Leakage current: 25mA
Max. forward impulse current: 110A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PDS1040Q-13 DIODES INCORPORATED PDS1040.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Leakage current: 50mA
Max. forward impulse current: 275A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MMSZ5231BS-7-F MMSZ5231BS-7-F DIODES INCORPORATED mmsz52xxbs_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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MMSZ5231BQ-7-F MMSZ5231BQ-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 5.1V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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SMBJ6.0CA-13-F SMBJ6.0CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.67V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 840 Stücke:
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313+0.27 EUR
348+0.25 EUR
371+0.23 EUR
414+0.2 EUR
500+0.19 EUR
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DMN6075S-7 DMN6075S.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 3910 Stücke:
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228+0.37 EUR
304+0.29 EUR
439+0.19 EUR
516+0.17 EUR
736+0.12 EUR
1000+0.11 EUR
3000+0.1 EUR
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ZXMN6A07FTA ZXMN6A07F.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 6.9A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.1A
Pulsed drain current: 6.9A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 1.65nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 978 Stücke:
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82+1.04 EUR
123+0.69 EUR
184+0.46 EUR
217+0.39 EUR
500+0.29 EUR
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DMN62D0U-7 DMN62D0U.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.38W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.38W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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358+0.24 EUR
439+0.19 EUR
500+0.17 EUR
743+0.11 EUR
985+0.087 EUR
1217+0.07 EUR
3000+0.048 EUR
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SMCJ26A-13-F SMCJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 35.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 35.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1303 Stücke:
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AnzahlPrivatkunde
87+0.99 EUR
105+0.82 EUR
118+0.73 EUR
186+0.45 EUR
500+0.33 EUR
1000+0.3 EUR
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SMBJ22A-13-F SMBJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMBJ22AQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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SMAJ20CA-13-F SMAJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Max. off-state voltage: 20V
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.4kW
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
auf Bestellung 366 Stücke:
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AnzahlPrivatkunde
228+0.37 EUR
285+0.3 EUR
321+0.26 EUR
366+0.24 EUR
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SMAJ20CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AP5100WG-7 AP5100-DTE.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷24VDC; Uout: 0.81÷15VDC; 1.2A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...24V DC
Output voltage: 0.81...15V DC
Output current: 1.2A
Case: SOT26
Mounting: SMD
Frequency: 1.4MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 90%
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AnzahlPrivatkunde
35+2.43 EUR
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SMAJ15A-13-F SMAJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
auf Bestellung 5047 Stücke:
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AnzahlPrivatkunde
358+0.24 EUR
432+0.2 EUR
562+0.15 EUR
618+0.14 EUR
685+0.12 EUR
736+0.12 EUR
1000+0.11 EUR
5000+0.1 EUR
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SMAJ14A-13-F SMAJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 660 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
209+0.4 EUR
266+0.32 EUR
309+0.27 EUR
447+0.19 EUR
500+0.18 EUR
Mindestbestellmenge: 209 Stücke
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SMBJ13CA-13-F SMBJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷16.5V; 27.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 27.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 1140 Stücke:
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AnzahlPrivatkunde
179+0.48 EUR
211+0.4 EUR
241+0.36 EUR
404+0.21 EUR
556+0.15 EUR
1000+0.14 EUR
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SMAJ13CA-13-F SMAJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DMG9933USD-13 DMG9933USD.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -20A
Drain current: -3A
Gate charge: 6.5nC
On-state resistance: 0.11Ω
Power dissipation: 1.15W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
105+0.82 EUR
144+0.6 EUR
242+0.36 EUR
500+0.25 EUR
1000+0.23 EUR
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DMP3056LSD-13 DMP3056LSD.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.1A; 2.5W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.1A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 967 Stücke:
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AnzahlPrivatkunde
65+1.31 EUR
104+0.82 EUR
159+0.54 EUR
500+0.42 EUR
650+0.4 EUR
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DMP3085LSD-13 DMP3085LSD.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Pulsed drain current: -20A
Drain-source voltage: -30V
Drain current: -3.1A
On-state resistance: 70mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 208 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
143+0.6 EUR
205+0.42 EUR
208+0.4 EUR
Mindestbestellmenge: 143 Stücke
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DMC4040SSD-13 DMC4040SSD-13.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 7.3/-7.5A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.04/0.045Ω
Produkt ist nicht verfügbar
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DMHC3025LSD-13 DMHC3025LSD.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; complementary pair; 30/-30V; 1.5W
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.5W
Gate charge: 11.7/11.4nC
Polarisation: unipolar
Drain current: 6/-4.2A
Kind of channel: enhancement
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 25/50mΩ
Produkt ist nicht verfügbar
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DMN6040SSD-13 DMN6040SSD.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
On-state resistance: 55mΩ
Power dissipation: 0.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 324 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
97+0.88 EUR
173+0.49 EUR
232+0.37 EUR
248+0.35 EUR
260+0.33 EUR
Mindestbestellmenge: 97 Stücke
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DMG4800LSD-13 DMG4800LSD.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SO8
On-state resistance: 22mΩ
Power dissipation: 1.5W
Drain current: 8.4A
Gate-source voltage: ±25V
Drain-source voltage: 30V
Kind of package: 13 inch reel; tape
auf Bestellung 443 Stücke:
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AnzahlPrivatkunde
80+1.07 EUR
108+0.79 EUR
156+0.55 EUR
182+0.46 EUR
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DMP2040USD-13 DMP2040USD.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -30A; 1.6W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -30A
Drain-source voltage: -20V
Drain current: -5A
Gate charge: 19nC
On-state resistance: 52mΩ
Power dissipation: 1.6W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
auf Bestellung 2485 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
97+0.88 EUR
124+0.69 EUR
143+0.6 EUR
232+0.37 EUR
500+0.26 EUR
1000+0.23 EUR
Mindestbestellmenge: 97 Stücke
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DMP6050SSD-13 DMP6050SSD.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8
Mounting: SMD
Pulsed drain current: -32A
Power dissipation: 1.2W
Polarisation: unipolar
Drain current: -3.9A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET x2
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 55mΩ
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
34+2.5 EUR
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DMC4050SSD-13 DMC4050SSD-13.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 5.8/-5.5A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 45/45mΩ
Produkt ist nicht verfügbar
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BZX84B27-7-F BZX84Bxx(x).pdf BZX84Bxxx.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 27V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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FMMT549TA FMMT549.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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FMMT549ATA FMMT549.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...500
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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DMNH4015SSD-13 DMNH4015SSD.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMNH4015SSDQ-13 DMNH4015SSDQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BZX84C3V9TS-7-F BZX84CxxTS_SER.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZX84C3V9W-7-F BZX84CxxW_SER.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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74LVC2G17DW-7 74LVC2G17.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; SOT363; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of package: reel; tape
Case: SOT363
Family: LVC
Number of channels: 2
Produkt ist nicht verfügbar
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74LVC2G17FX4-7 74LVC2G17.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1409-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of package: reel; tape
Case: X2-DFN1409-6
Family: LVC
Number of channels: 2
Produkt ist nicht verfügbar
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74LVC2G17FW4-7 74LVC2G17.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1010-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of package: reel; tape
Case: X2-DFN1010-6
Family: LVC
Number of channels: 2
Produkt ist nicht verfügbar
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74LVC2G17FZ4-7 74LVC2G17.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of package: reel; tape
Case: X2-DFN1410-6
Family: LVC
Number of channels: 2
Produkt ist nicht verfügbar
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SMBJ7.0A-13-F SMBJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.78÷8.95V; 50A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.95V
Max. forward impulse current: 50A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMAJ36CA-13-F SMAJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
94+0.9 EUR
Mindestbestellmenge: 94 Stücke
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SMAJ36CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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74AHC1G126SE-7 74AHC1G126.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; AHC
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT353
Quiescent current: 40µA
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Manufacturer series: AHC
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS
auf Bestellung 1969 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
500+0.17 EUR
676+0.13 EUR
770+0.11 EUR
913+0.093 EUR
1127+0.075 EUR
1238+0.069 EUR
1303+0.065 EUR
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APX811-46UG-7 APX811_812.pdf
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Mounting: SMD
Kind of package: reel; tape
Active logical level: low
Integrated circuit features: manual reset
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Case: SOT143
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Number of channels: 1
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 4.63V
Produkt ist nicht verfügbar
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BZX84B11-7-F BZX84Bxxx.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 11V; SMD; SOT23; reel,tape; single diode
Kind of package: reel; tape
Case: SOT23
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±2%
Zener voltage: 11V
Semiconductor structure: single diode
Mounting: SMD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
625+0.13 EUR
834+0.1 EUR
926+0.092 EUR
1348+0.063 EUR
1684+0.05 EUR
1825+0.046 EUR
3000+0.042 EUR
Mindestbestellmenge: 625 Stücke
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APX803L20-23SA-7 APX803L.pdf
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Case: SOT23
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 220ms
Supply voltage: 0.9...5.5V DC
Number of channels: 1
Threshold on-voltage: 2.3V
Integrated circuit features: ±1,5% accuracy
Produkt ist nicht verfügbar
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BZX84C15-13-F BZX84Cxx_SER.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 3640 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1240+0.069 EUR
2780+0.031 EUR
3120+0.027 EUR
3440+0.025 EUR
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DDZX15-13 ds30408.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Type of diode: Zener
Power dissipation: 0.3W
Tolerance: ±2.5%
Zener voltage: 15V
Produkt ist nicht verfügbar
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AP7115-15SEG-7 AP7115.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT353; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7115
Input voltage: 2.5...5.5V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Output voltage: 1.5V
Kind of package: reel; tape
Case: SOT353
Number of channels: 1
Tolerance: ±2%
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
495+0.18 EUR
760+0.11 EUR
865+0.099 EUR
965+0.088 EUR
Mindestbestellmenge: 495 Stücke
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TLV271CW5-7 TLV27x.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; Ch: 1; Uoper: 2.7÷16V; SOT25; 110dB
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Number of channels: 1
Mounting: SMT
Case: SOT25
Operating temperature: 0...70°C
Integrated circuit features: rail-to-rail output
Input offset voltage: 5mV
Operating voltage: 2.7...16V
Slew rate: 2V/μs
Power dissipation: 0.22W
Open-loop gain: 110dB
Kind of package: reel; tape
auf Bestellung 1809 Stücke:
Lieferzeit 14-21 Tag (e)
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228+0.37 EUR
288+0.3 EUR
321+0.26 EUR
374+0.23 EUR
451+0.19 EUR
486+0.18 EUR
500+0.17 EUR
Mindestbestellmenge: 228 Stücke
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TLV271IW5-7 TLV27x.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; Ch: 1; Uoper: 2.7÷16V; SOT25; 110dB
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Number of channels: 1
Mounting: SMT
Case: SOT25
Operating temperature: -40...125°C
Integrated circuit features: rail-to-rail output
Input offset voltage: 5mV
Operating voltage: 2.7...16V
Slew rate: 2V/μs
Power dissipation: 0.22W
Open-loop gain: 110dB
Kind of package: reel; tape
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)
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193+0.44 EUR
Mindestbestellmenge: 193 Stücke
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AP3031KTR-G1 AP3031%20Datasheet.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷16VDC; Uout: 37VDC; 1.4A; SOT23-6
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...16V DC
Output voltage: 37V DC
Output current: 1.4A
Case: SOT23-6
Mounting: SMD
Frequency: 1MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Integrated circuit features: PWM
Efficiency: 92%
Application: for LED applications
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
209+0.4 EUR
258+0.33 EUR
296+0.29 EUR
355+0.24 EUR
428+0.2 EUR
435+0.19 EUR
Mindestbestellmenge: 209 Stücke
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AP3012KTR-E1 AP3012-DTE.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.6÷16VDC; Uout: 1.25÷29VDC; 0.5A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.6...16V DC
Output voltage: 1.25...29V DC
Output current: 0.5A
Case: SOT23-5
Mounting: SMD
Frequency: 1.5MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 85%
auf Bestellung 2551 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
132+0.64 EUR
162+0.52 EUR
182+0.46 EUR
210+0.4 EUR
249+0.35 EUR
269+0.32 EUR
500+0.3 EUR
Mindestbestellmenge: 132 Stücke
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AP3012KTR-G1 AP3012-DTE.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.6÷16VDC; Uout: 1.25÷29VDC; 0.5A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.6...16V DC
Output voltage: 1.25...29V DC
Output current: 0.5A
Case: SOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 85%
Produkt ist nicht verfügbar
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FZT749TA FZT749.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Frequency: 160MHz
Kind of package: reel; tape
Current gain: 75...570
Quantity in set/package: 1000pcs.
Produkt ist nicht verfügbar
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FZT749TC FZT749.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 2W; SOT223-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-3
Mounting: SMD
Frequency: 160MHz
Produkt ist nicht verfügbar
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BCW68HTA BCW68H.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.31W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 1000pcs.
Produkt ist nicht verfügbar
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DESD5V0S1BLD-7B DESD5V0S1BLD.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 12A; bidirectional; DFN1006-2; reel,tape
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 0.1µA
Max. forward impulse current: 12A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Produkt ist nicht verfügbar
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PDS1040-13 PDS1040.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Leakage current: 50mA
Max. forward impulse current: 275A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PDS1040L-13 ds30486.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 275A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDS1040CTL-13 ds30485.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 40V
Leakage current: 25mA
Max. forward impulse current: 110A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PDS1040Q-13 PDS1040.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Leakage current: 50mA
Max. forward impulse current: 275A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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MMSZ5231BS-7-F mmsz52xxbs_ser.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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MMSZ5231BQ-7-F mmsz52xxb_Ser.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 5.1V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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SMBJ6.0CA-13-F SMBJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.67V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 840 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
313+0.27 EUR
348+0.25 EUR
371+0.23 EUR
414+0.2 EUR
500+0.19 EUR
Mindestbestellmenge: 313 Stücke
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