Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (79034) > Seite 1193 nach 1318
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DGD21814S14-13 | DIODES INCORPORATED |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A Supply voltage: 10...20V Output current: -2.3...1.9A Type of integrated circuit: driver Impulse rise time: 60ns Pulse fall time: 35ns Number of channels: 1 Kind of package: reel; tape Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge; MOSFET half-bridge Mounting: SMD Operating temperature: -40...125°C Case: SO14 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD2181MS8-13 | DIODES INCORPORATED |
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DGD2181S8-13 | DIODES INCORPORATED |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A Supply voltage: 10...20V Output current: -2.3...1.9A Type of integrated circuit: driver Impulse rise time: 60ns Pulse fall time: 35ns Number of channels: 1 Kind of package: reel; tape Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge; MOSFET half-bridge Mounting: SMD Operating temperature: -40...125°C Case: SO8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD2184MS8-13 | DIODES INCORPORATED |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A Supply voltage: 10...20V Output current: -2.3...1.9A Type of integrated circuit: driver Impulse rise time: 60ns Pulse fall time: 35ns Number of channels: 1 Kind of package: reel; tape Kind of integrated circuit: gate driver; high-side Topology: IGBT half-bridge; MOSFET half-bridge Mounting: SMD Operating temperature: -40...125°C Case: SO8 Anzahl je Verpackung: 1 Stücke |
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DGD21904MS14-13 | DIODES INCORPORATED |
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DGD2190MS8-13 | DIODES INCORPORATED |
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DGD2304S8-13 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DGTD120T25S1PT | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DGTD65T15H2TF | DIODES INCORPORATED |
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auf Bestellung 574 Stücke: Lieferzeit 7-14 Tag (e) |
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DLD101-7 | DIODES INCORPORATED |
![]() Description: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1 Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: LED driver Case: DFN8 Output current: 0.8A Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5...50V DC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DLD101Q-7 | DIODES INCORPORATED |
![]() Description: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1 Case: DFN8 Output current: 0.8A Type of integrated circuit: driver Number of channels: 1 Application: automotive industry Integrated circuit features: linear dimming; PWM Kind of integrated circuit: LED driver Topology: single transistor Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5...50V DC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2979 Stücke: Lieferzeit 7-14 Tag (e) |
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DLLFSD01LP3-7 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DLP05LC-7-F | DIODES INCORPORATED |
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auf Bestellung 473 Stücke: Lieferzeit 7-14 Tag (e) |
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DLPA006-7 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DM1231-02SO-7 | DIODES INCORPORATED | DM1231-02SO-7 Protection diodes - arrays |
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DMC1029UFDB-7 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMC1030UFDB-7 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMC1030UFDBQ-7 | DIODES INCORPORATED |
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DMC2004DWK-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Case: SOT363 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 20/-20V Drain current: 0.43/-0.54A On-state resistance: 0.55/0.9Ω Type of transistor: N/P-MOSFET Power dissipation: 0.25W Polarisation: unipolar Version: ESD Kind of transistor: complementary pair Kind of channel: enhancement Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC2004LPK-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Mounting: SMD Case: X1-DFN1612-6 Drain-source voltage: 20/-20V Drain current: 0.6/-0.75A On-state resistance: 0.55/0.9Ω Type of transistor: N/P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Kind of package: 7 inch reel; tape Version: ESD Kind of transistor: complementary pair Kind of channel: enhancement Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMC2004VK-7 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMC2020USD-13 | DIODES INCORPORATED |
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auf Bestellung 789 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC2038LVT-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 3.1/-4.5A Power dissipation: 1.1W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 0.035/0.074Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1258 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC2038LVTQ-7 | DIODES INCORPORATED |
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auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC2400UV-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.8/-0.55A Power dissipation: 0.45W Case: SOT563 Gate-source voltage: ±12V On-state resistance: 0.5/1Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Kind of transistor: complementary pair Anzahl je Verpackung: 1 Stücke |
auf Bestellung 400 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC2450UV-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Polarisation: unipolar Drain current: 1.3/-0.7A Power dissipation: 1W Drain-source voltage: 20/-20V Case: SOT563 Kind of package: 7 inch reel; tape Version: ESD Mounting: SMD Kind of transistor: complementary pair Kind of channel: enhancement Gate-source voltage: ±12V Type of transistor: N/P-MOSFET On-state resistance: 1/0.5Ω Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2945 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC2700UDM-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 1.14/-1.34A Power dissipation: 1.12W Case: SOT26 Gate-source voltage: ±6V On-state resistance: 0.4/0.7Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2808 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC2990UDJ-7 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMC2990UDJQ-7 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMC3016LSD-13 | DIODES INCORPORATED |
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auf Bestellung 610 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC3021LK4-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 6.8/-9.4A Power dissipation: 2.75W Case: TO252-4 Gate-source voltage: ±20V On-state resistance: 0.021/0.039Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
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DMC3021LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 7/-8.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.021/0.039Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 136 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC3025LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 5.5/-8.5A Power dissipation: 1.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.02/0.045Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1524 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC3025LSDQ-13 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMC3028LSD-13 | DIODES INCORPORATED |
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auf Bestellung 385 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC3028LSDX-13 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMC3032LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Mounting: SMD Case: SO8 Drain-source voltage: 30/-30V Drain current: 7/-8.1A On-state resistance: 0.032/0.039Ω Type of transistor: N/P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: 13 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2199 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC3400SDW-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Mounting: SMD Version: ESD Power dissipation: 0.39W Polarisation: unipolar Kind of package: 7 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Gate-source voltage: ±20V Case: SOT363 Drain-source voltage: 30/-30V Drain current: 0.5/-0.36A On-state resistance: 0.4/0.9Ω Type of transistor: N/P-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 553 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC4015SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Drain-source voltage: 40/-40V Drain current: 9.5/-12.2A On-state resistance: 0.015/0.029Ω Type of transistor: N/P-MOSFET Power dissipation: 1.7W Polarisation: unipolar Kind of package: 13 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SO8 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1673 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC4028SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Drain-source voltage: 40/-40V Drain current: 5.5/-4.2A On-state resistance: 0.028/0.05Ω Type of transistor: N/P-MOSFET Power dissipation: 1.8W Polarisation: unipolar Kind of package: 13 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SO8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMC4029SSD-13 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMC4040SSD-13 | DIODES INCORPORATED |
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auf Bestellung 630 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC4040SSDQ-13 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMC4047LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Mounting: SMD Case: SO8 Drain-source voltage: 40/-40V Drain current: 6.3/-6.3A On-state resistance: 0.024/0.04Ω Type of transistor: N/P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMC4050SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 40/-40V Drain current: 5.8/-5.5A Power dissipation: 1.8W Case: SO8 Gate-source voltage: ±20V On-state resistance: 45/45mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2485 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC4050SSDQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 40/-40V Drain current: 5.8/-5.8A Power dissipation: 2.14W Case: SO8 Gate-source voltage: ±20V On-state resistance: 45/45mΩ Mounting: SMD Gate charge: 37.56/33.66nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMC6040SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 60/-60V Drain current: 5.1/-3.9A Power dissipation: 1.56W Case: SO8 Gate-source voltage: ±20V On-state resistance: 40/110mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1976 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC6040SSDQ-13 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMC67D8UFDBQ-7 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMG1012T-13 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMG1012T-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.28W; SOT523; ESD Mounting: SMD Drain-source voltage: 20V Drain current: 0.45A On-state resistance: 0.3Ω Type of transistor: N-MOSFET Power dissipation: 0.28W Polarisation: unipolar Kind of package: 7 inch reel; tape Version: ESD Kind of channel: enhancement Gate-source voltage: ±6V Case: SOT523 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4801 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG1012TQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.28W; SOT523; ESD Mounting: SMD Drain-source voltage: 20V Drain current: 0.45A On-state resistance: 0.3Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 0.28W Polarisation: unipolar Kind of package: 7 inch reel; tape Version: ESD Kind of channel: enhancement Gate-source voltage: ±6V Case: SOT523 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 245 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG1012UW-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1A; 0.29W; SOT323; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1A Power dissipation: 0.29W Case: SOT323 Gate-source voltage: ±6V On-state resistance: 0.3Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2168 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG1012UWQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 6A; 610mW; SOT323 Case: SOT323 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 20V Drain current: 0.75A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 0.61W Polarisation: unipolar Gate charge: 1nC Kind of channel: enhancement Gate-source voltage: ±6V Pulsed drain current: 6A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2494 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG1013T-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -0.33A; Idm: -6A; 0.27W; ESD Version: ESD Mounting: SMD Power dissipation: 0.27W Polarisation: unipolar Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate-source voltage: ±6V Pulsed drain current: -6A Drain-source voltage: -20V Drain current: -330mA On-state resistance: 0.7Ω Type of transistor: P-MOSFET Case: SOT523 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1670 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG1013TQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -330mA; Idm: -6A; 270mW Mounting: SMD Application: automotive industry Power dissipation: 0.27W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 580pC Kind of channel: enhancement Gate-source voltage: ±6V Pulsed drain current: -6A Drain-source voltage: -20V Drain current: -330mA On-state resistance: 1.3Ω Type of transistor: P-MOSFET Case: SOT523 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMG1013UW-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -540mA Power dissipation: 0.31W Case: SOT323 Gate-source voltage: ±6V On-state resistance: 1.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 16762 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG1013UWQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW Mounting: SMD Application: automotive industry Power dissipation: 0.31W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 622.4pC Kind of channel: enhancement Gate-source voltage: ±6V Pulsed drain current: -3A Drain-source voltage: -20V Drain current: -540mA On-state resistance: 1.5Ω Type of transistor: P-MOSFET Case: SOT323 Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMG1013UWQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323; ESD Version: ESD Mounting: SMD Application: automotive industry Power dissipation: 0.31W Polarisation: unipolar Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate-source voltage: ±6V Drain-source voltage: -20V Drain current: -540mA On-state resistance: 1.5Ω Type of transistor: P-MOSFET Case: SOT323 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3074 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG1016UDW-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 0.85/-1.07A Power dissipation: 0.53W Case: SOT363 Gate-source voltage: ±6V On-state resistance: 0.45/0.75Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1260 Stücke: Lieferzeit 7-14 Tag (e) |
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DGD21814S14-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Supply voltage: 10...20V
Output current: -2.3...1.9A
Type of integrated circuit: driver
Impulse rise time: 60ns
Pulse fall time: 35ns
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Case: SO14
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Supply voltage: 10...20V
Output current: -2.3...1.9A
Type of integrated circuit: driver
Impulse rise time: 60ns
Pulse fall time: 35ns
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Case: SO14
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD2181MS8-13 |
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Hersteller: DIODES INCORPORATED
DGD2181MS8-13 MOSFET/IGBT drivers
DGD2181MS8-13 MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD2181S8-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Supply voltage: 10...20V
Output current: -2.3...1.9A
Type of integrated circuit: driver
Impulse rise time: 60ns
Pulse fall time: 35ns
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Supply voltage: 10...20V
Output current: -2.3...1.9A
Type of integrated circuit: driver
Impulse rise time: 60ns
Pulse fall time: 35ns
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD2184MS8-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Supply voltage: 10...20V
Output current: -2.3...1.9A
Type of integrated circuit: driver
Impulse rise time: 60ns
Pulse fall time: 35ns
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-side
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Supply voltage: 10...20V
Output current: -2.3...1.9A
Type of integrated circuit: driver
Impulse rise time: 60ns
Pulse fall time: 35ns
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-side
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD21904MS14-13 |
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Hersteller: DIODES INCORPORATED
DGD21904MS14-13 MOSFET/IGBT drivers
DGD21904MS14-13 MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD2190MS8-13 |
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Hersteller: DIODES INCORPORATED
DGD2190MS8-13 MOSFET/IGBT drivers
DGD2190MS8-13 MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD2304S8-13 |
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Hersteller: DIODES INCORPORATED
DGD2304S8-13 MOSFET/IGBT drivers
DGD2304S8-13 MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGTD120T25S1PT |
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Hersteller: DIODES INCORPORATED
DGTD120T25S1PT THT IGBT transistors
DGTD120T25S1PT THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGTD65T15H2TF |
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Hersteller: DIODES INCORPORATED
DGTD65T15H2TF THT IGBT transistors
DGTD65T15H2TF THT IGBT transistors
auf Bestellung 574 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.89 EUR |
54+ | 1.33 EUR |
57+ | 1.26 EUR |
DLD101-7 |
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Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: LED driver
Case: DFN8
Output current: 0.8A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5...50V DC
Anzahl je Verpackung: 1 Stücke
Category: LED drivers
Description: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: LED driver
Case: DFN8
Output current: 0.8A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5...50V DC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DLD101Q-7 |
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Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1
Case: DFN8
Output current: 0.8A
Type of integrated circuit: driver
Number of channels: 1
Application: automotive industry
Integrated circuit features: linear dimming; PWM
Kind of integrated circuit: LED driver
Topology: single transistor
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5...50V DC
Anzahl je Verpackung: 1 Stücke
Category: LED drivers
Description: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1
Case: DFN8
Output current: 0.8A
Type of integrated circuit: driver
Number of channels: 1
Application: automotive industry
Integrated circuit features: linear dimming; PWM
Kind of integrated circuit: LED driver
Topology: single transistor
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5...50V DC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2979 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
80+ | 0.9 EUR |
202+ | 0.35 EUR |
228+ | 0.31 EUR |
DLLFSD01LP3-7 |
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Hersteller: DIODES INCORPORATED
DLLFSD01LP3-7 SMD universal diodes
DLLFSD01LP3-7 SMD universal diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DLP05LC-7-F |
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Hersteller: DIODES INCORPORATED
DLP05LC-7-F Unidirectional TVS SMD diodes
DLP05LC-7-F Unidirectional TVS SMD diodes
auf Bestellung 473 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
177+ | 0.4 EUR |
473+ | 0.16 EUR |
3000+ | 0.13 EUR |
DLPA006-7 |
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Hersteller: DIODES INCORPORATED
DLPA006-7 Protection diodes - arrays
DLPA006-7 Protection diodes - arrays
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DM1231-02SO-7 |
Hersteller: DIODES INCORPORATED
DM1231-02SO-7 Protection diodes - arrays
DM1231-02SO-7 Protection diodes - arrays
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC1029UFDB-7 |
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Hersteller: DIODES INCORPORATED
DMC1029UFDB-7 Multi channel transistors
DMC1029UFDB-7 Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC1030UFDB-7 |
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Hersteller: DIODES INCORPORATED
DMC1030UFDB-7 SMD N channel transistors
DMC1030UFDB-7 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC1030UFDBQ-7 |
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Hersteller: DIODES INCORPORATED
DMC1030UFDBQ-7 SMD N channel transistors
DMC1030UFDBQ-7 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC2004DWK-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Case: SOT363
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20/-20V
Drain current: 0.43/-0.54A
On-state resistance: 0.55/0.9Ω
Type of transistor: N/P-MOSFET
Power dissipation: 0.25W
Polarisation: unipolar
Version: ESD
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Case: SOT363
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20/-20V
Drain current: 0.43/-0.54A
On-state resistance: 0.55/0.9Ω
Type of transistor: N/P-MOSFET
Power dissipation: 0.25W
Polarisation: unipolar
Version: ESD
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
176+ | 0.41 EUR |
224+ | 0.32 EUR |
336+ | 0.21 EUR |
355+ | 0.2 EUR |
500+ | 0.19 EUR |
DMC2004LPK-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: X1-DFN1612-6
Drain-source voltage: 20/-20V
Drain current: 0.6/-0.75A
On-state resistance: 0.55/0.9Ω
Type of transistor: N/P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: X1-DFN1612-6
Drain-source voltage: 20/-20V
Drain current: 0.6/-0.75A
On-state resistance: 0.55/0.9Ω
Type of transistor: N/P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC2004VK-7 |
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Hersteller: DIODES INCORPORATED
DMC2004VK-7 Multi channel transistors
DMC2004VK-7 Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC2020USD-13 |
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Hersteller: DIODES INCORPORATED
DMC2020USD-13 Multi channel transistors
DMC2020USD-13 Multi channel transistors
auf Bestellung 789 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
75+ | 0.96 EUR |
177+ | 0.4 EUR |
187+ | 0.38 EUR |
2500+ | 0.37 EUR |
DMC2038LVT-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.1/-4.5A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.035/0.074Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.1/-4.5A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.035/0.074Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1258 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
250+ | 0.29 EUR |
348+ | 0.21 EUR |
404+ | 0.18 EUR |
610+ | 0.12 EUR |
642+ | 0.11 EUR |
DMC2038LVTQ-7 |
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Hersteller: DIODES INCORPORATED
DMC2038LVTQ-7 Multi channel transistors
DMC2038LVTQ-7 Multi channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
160+ | 0.45 EUR |
407+ | 0.18 EUR |
432+ | 0.17 EUR |
DMC2400UV-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.8/-0.55A
Power dissipation: 0.45W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 0.5/1Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.8/-0.55A
Power dissipation: 0.45W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 0.5/1Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
Anzahl je Verpackung: 1 Stücke
auf Bestellung 400 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
241+ | 0.3 EUR |
311+ | 0.23 EUR |
400+ | 0.17 EUR |
654+ | 0.11 EUR |
3000+ | 0.064 EUR |
DMC2450UV-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Polarisation: unipolar
Drain current: 1.3/-0.7A
Power dissipation: 1W
Drain-source voltage: 20/-20V
Case: SOT563
Kind of package: 7 inch reel; tape
Version: ESD
Mounting: SMD
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±12V
Type of transistor: N/P-MOSFET
On-state resistance: 1/0.5Ω
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Polarisation: unipolar
Drain current: 1.3/-0.7A
Power dissipation: 1W
Drain-source voltage: 20/-20V
Case: SOT563
Kind of package: 7 inch reel; tape
Version: ESD
Mounting: SMD
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±12V
Type of transistor: N/P-MOSFET
On-state resistance: 1/0.5Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2945 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
183+ | 0.39 EUR |
227+ | 0.32 EUR |
368+ | 0.19 EUR |
447+ | 0.16 EUR |
658+ | 0.11 EUR |
695+ | 0.1 EUR |
DMC2700UDM-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 1.14/-1.34A
Power dissipation: 1.12W
Case: SOT26
Gate-source voltage: ±6V
On-state resistance: 0.4/0.7Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 1.14/-1.34A
Power dissipation: 1.12W
Case: SOT26
Gate-source voltage: ±6V
On-state resistance: 0.4/0.7Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2808 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
315+ | 0.23 EUR |
394+ | 0.18 EUR |
592+ | 0.12 EUR |
847+ | 0.085 EUR |
893+ | 0.08 EUR |
DMC2990UDJ-7 |
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Hersteller: DIODES INCORPORATED
DMC2990UDJ-7 Multi channel transistors
DMC2990UDJ-7 Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC2990UDJQ-7 |
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Hersteller: DIODES INCORPORATED
DMC2990UDJQ-7 SMD N channel transistors
DMC2990UDJQ-7 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC3016LSD-13 |
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Hersteller: DIODES INCORPORATED
DMC3016LSD-13 Multi channel transistors
DMC3016LSD-13 Multi channel transistors
auf Bestellung 610 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
106+ | 0.68 EUR |
280+ | 0.26 EUR |
296+ | 0.24 EUR |
5000+ | 0.23 EUR |
DMC3021LK4-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 6.8/-9.4A
Power dissipation: 2.75W
Case: TO252-4
Gate-source voltage: ±20V
On-state resistance: 0.021/0.039Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 2500 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 6.8/-9.4A
Power dissipation: 2.75W
Case: TO252-4
Gate-source voltage: ±20V
On-state resistance: 0.021/0.039Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC3021LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7/-8.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.021/0.039Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7/-8.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.021/0.039Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 136 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
136+ | 0.53 EUR |
174+ | 0.41 EUR |
1000+ | 0.25 EUR |
2500+ | 0.24 EUR |
DMC3025LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 5.5/-8.5A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.02/0.045Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 5.5/-8.5A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.02/0.045Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1524 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
95+ | 0.76 EUR |
143+ | 0.5 EUR |
348+ | 0.21 EUR |
368+ | 0.19 EUR |
DMC3025LSDQ-13 |
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Hersteller: DIODES INCORPORATED
DMC3025LSDQ-13 Multi channel transistors
DMC3025LSDQ-13 Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC3028LSD-13 |
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Hersteller: DIODES INCORPORATED
DMC3028LSD-13 Multi channel transistors
DMC3028LSD-13 Multi channel transistors
auf Bestellung 385 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
171+ | 0.42 EUR |
261+ | 0.27 EUR |
276+ | 0.26 EUR |
DMC3028LSDX-13 |
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Hersteller: DIODES INCORPORATED
DMC3028LSDX-13 Multi channel transistors
DMC3028LSDX-13 Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC3032LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Case: SO8
Drain-source voltage: 30/-30V
Drain current: 7/-8.1A
On-state resistance: 0.032/0.039Ω
Type of transistor: N/P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Case: SO8
Drain-source voltage: 30/-30V
Drain current: 7/-8.1A
On-state resistance: 0.032/0.039Ω
Type of transistor: N/P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2199 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
95+ | 0.76 EUR |
141+ | 0.51 EUR |
319+ | 0.22 EUR |
338+ | 0.21 EUR |
2500+ | 0.2 EUR |
DMC3400SDW-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Version: ESD
Power dissipation: 0.39W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SOT363
Drain-source voltage: 30/-30V
Drain current: 0.5/-0.36A
On-state resistance: 0.4/0.9Ω
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Version: ESD
Power dissipation: 0.39W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SOT363
Drain-source voltage: 30/-30V
Drain current: 0.5/-0.36A
On-state resistance: 0.4/0.9Ω
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 553 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
404+ | 0.18 EUR |
486+ | 0.15 EUR |
553+ | 0.13 EUR |
DMC4015SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Drain-source voltage: 40/-40V
Drain current: 9.5/-12.2A
On-state resistance: 0.015/0.029Ω
Type of transistor: N/P-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Drain-source voltage: 40/-40V
Drain current: 9.5/-12.2A
On-state resistance: 0.015/0.029Ω
Type of transistor: N/P-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1673 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
81+ | 0.89 EUR |
95+ | 0.76 EUR |
117+ | 0.61 EUR |
124+ | 0.58 EUR |
500+ | 0.56 EUR |
DMC4028SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Drain-source voltage: 40/-40V
Drain current: 5.5/-4.2A
On-state resistance: 0.028/0.05Ω
Type of transistor: N/P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Drain-source voltage: 40/-40V
Drain current: 5.5/-4.2A
On-state resistance: 0.028/0.05Ω
Type of transistor: N/P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC4029SSD-13 |
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Hersteller: DIODES INCORPORATED
DMC4029SSD-13 Multi channel transistors
DMC4029SSD-13 Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC4040SSD-13 |
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Hersteller: DIODES INCORPORATED
DMC4040SSD-13 Multi channel transistors
DMC4040SSD-13 Multi channel transistors
auf Bestellung 630 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
61+ | 1.19 EUR |
152+ | 0.47 EUR |
160+ | 0.45 EUR |
DMC4040SSDQ-13 |
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Hersteller: DIODES INCORPORATED
DMC4040SSDQ-13 SMD N channel transistors
DMC4040SSDQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC4047LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Mounting: SMD
Case: SO8
Drain-source voltage: 40/-40V
Drain current: 6.3/-6.3A
On-state resistance: 0.024/0.04Ω
Type of transistor: N/P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Mounting: SMD
Case: SO8
Drain-source voltage: 40/-40V
Drain current: 6.3/-6.3A
On-state resistance: 0.024/0.04Ω
Type of transistor: N/P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC4050SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 40/-40V
Drain current: 5.8/-5.5A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45/45mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 40/-40V
Drain current: 5.8/-5.5A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45/45mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2485 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
61+ | 1.19 EUR |
95+ | 0.76 EUR |
182+ | 0.39 EUR |
193+ | 0.37 EUR |
1000+ | 0.36 EUR |
DMC4050SSDQ-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 40/-40V
Drain current: 5.8/-5.8A
Power dissipation: 2.14W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45/45mΩ
Mounting: SMD
Gate charge: 37.56/33.66nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 40/-40V
Drain current: 5.8/-5.8A
Power dissipation: 2.14W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45/45mΩ
Mounting: SMD
Gate charge: 37.56/33.66nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC6040SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 5.1/-3.9A
Power dissipation: 1.56W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 40/110mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 5.1/-3.9A
Power dissipation: 1.56W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 40/110mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1976 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
79+ | 0.92 EUR |
113+ | 0.64 EUR |
211+ | 0.34 EUR |
223+ | 0.32 EUR |
1000+ | 0.31 EUR |
DMC6040SSDQ-13 |
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Hersteller: DIODES INCORPORATED
DMC6040SSDQ-13 Multi channel transistors
DMC6040SSDQ-13 Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC67D8UFDBQ-7 |
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Hersteller: DIODES INCORPORATED
DMC67D8UFDBQ-7 Multi channel transistors
DMC67D8UFDBQ-7 Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMG1012T-13 |
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Hersteller: DIODES INCORPORATED
DMG1012T-13 SMD N channel transistors
DMG1012T-13 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMG1012T-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.28W; SOT523; ESD
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.45A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.28W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±6V
Case: SOT523
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.28W; SOT523; ESD
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.45A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.28W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±6V
Case: SOT523
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4801 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
696+ | 0.1 EUR |
910+ | 0.079 EUR |
2128+ | 0.034 EUR |
2253+ | 0.032 EUR |
DMG1012TQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.28W; SOT523; ESD
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.45A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.28W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±6V
Case: SOT523
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.28W; SOT523; ESD
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.45A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.28W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±6V
Case: SOT523
Anzahl je Verpackung: 1 Stücke
auf Bestellung 245 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
245+ | 0.29 EUR |
312+ | 0.23 EUR |
500+ | 0.14 EUR |
856+ | 0.083 EUR |
DMG1012UW-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; 0.29W; SOT323; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Power dissipation: 0.29W
Case: SOT323
Gate-source voltage: ±6V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; 0.29W; SOT323; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Power dissipation: 0.29W
Case: SOT323
Gate-source voltage: ±6V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2168 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
413+ | 0.17 EUR |
512+ | 0.14 EUR |
557+ | 0.13 EUR |
1516+ | 0.047 EUR |
1603+ | 0.045 EUR |
DMG1012UWQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 6A; 610mW; SOT323
Case: SOT323
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Drain current: 0.75A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.61W
Polarisation: unipolar
Gate charge: 1nC
Kind of channel: enhancement
Gate-source voltage: ±6V
Pulsed drain current: 6A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 6A; 610mW; SOT323
Case: SOT323
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Drain current: 0.75A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.61W
Polarisation: unipolar
Gate charge: 1nC
Kind of channel: enhancement
Gate-source voltage: ±6V
Pulsed drain current: 6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2494 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
295+ | 0.24 EUR |
395+ | 0.18 EUR |
450+ | 0.16 EUR |
1025+ | 0.07 EUR |
1083+ | 0.066 EUR |
21000+ | 0.063 EUR |
DMG1013T-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.33A; Idm: -6A; 0.27W; ESD
Version: ESD
Mounting: SMD
Power dissipation: 0.27W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±6V
Pulsed drain current: -6A
Drain-source voltage: -20V
Drain current: -330mA
On-state resistance: 0.7Ω
Type of transistor: P-MOSFET
Case: SOT523
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.33A; Idm: -6A; 0.27W; ESD
Version: ESD
Mounting: SMD
Power dissipation: 0.27W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±6V
Pulsed drain current: -6A
Drain-source voltage: -20V
Drain current: -330mA
On-state resistance: 0.7Ω
Type of transistor: P-MOSFET
Case: SOT523
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1670 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
463+ | 0.15 EUR |
589+ | 0.12 EUR |
997+ | 0.072 EUR |
1171+ | 0.061 EUR |
1544+ | 0.046 EUR |
1629+ | 0.044 EUR |
DMG1013TQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -330mA; Idm: -6A; 270mW
Mounting: SMD
Application: automotive industry
Power dissipation: 0.27W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 580pC
Kind of channel: enhancement
Gate-source voltage: ±6V
Pulsed drain current: -6A
Drain-source voltage: -20V
Drain current: -330mA
On-state resistance: 1.3Ω
Type of transistor: P-MOSFET
Case: SOT523
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -330mA; Idm: -6A; 270mW
Mounting: SMD
Application: automotive industry
Power dissipation: 0.27W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 580pC
Kind of channel: enhancement
Gate-source voltage: ±6V
Pulsed drain current: -6A
Drain-source voltage: -20V
Drain current: -330mA
On-state resistance: 1.3Ω
Type of transistor: P-MOSFET
Case: SOT523
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMG1013UW-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -540mA
Power dissipation: 0.31W
Case: SOT323
Gate-source voltage: ±6V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -540mA
Power dissipation: 0.31W
Case: SOT323
Gate-source voltage: ±6V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16762 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
468+ | 0.15 EUR |
731+ | 0.098 EUR |
1289+ | 0.055 EUR |
1363+ | 0.052 EUR |
3000+ | 0.05 EUR |
DMG1013UWQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW
Mounting: SMD
Application: automotive industry
Power dissipation: 0.31W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 622.4pC
Kind of channel: enhancement
Gate-source voltage: ±6V
Pulsed drain current: -3A
Drain-source voltage: -20V
Drain current: -540mA
On-state resistance: 1.5Ω
Type of transistor: P-MOSFET
Case: SOT323
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW
Mounting: SMD
Application: automotive industry
Power dissipation: 0.31W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 622.4pC
Kind of channel: enhancement
Gate-source voltage: ±6V
Pulsed drain current: -3A
Drain-source voltage: -20V
Drain current: -540mA
On-state resistance: 1.5Ω
Type of transistor: P-MOSFET
Case: SOT323
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMG1013UWQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323; ESD
Version: ESD
Mounting: SMD
Application: automotive industry
Power dissipation: 0.31W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±6V
Drain-source voltage: -20V
Drain current: -540mA
On-state resistance: 1.5Ω
Type of transistor: P-MOSFET
Case: SOT323
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323; ESD
Version: ESD
Mounting: SMD
Application: automotive industry
Power dissipation: 0.31W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±6V
Drain-source voltage: -20V
Drain current: -540mA
On-state resistance: 1.5Ω
Type of transistor: P-MOSFET
Case: SOT323
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3074 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
250+ | 0.29 EUR |
388+ | 0.18 EUR |
529+ | 0.14 EUR |
612+ | 0.12 EUR |
1003+ | 0.071 EUR |
1060+ | 0.067 EUR |
DMG1016UDW-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.85/-1.07A
Power dissipation: 0.53W
Case: SOT363
Gate-source voltage: ±6V
On-state resistance: 0.45/0.75Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.85/-1.07A
Power dissipation: 0.53W
Case: SOT363
Gate-source voltage: ±6V
On-state resistance: 0.45/0.75Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1260 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
256+ | 0.28 EUR |
369+ | 0.19 EUR |
439+ | 0.16 EUR |
867+ | 0.083 EUR |
916+ | 0.078 EUR |