Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74061) > Seite 1188 nach 1235

Wählen Sie Seite:   [  << Vorherige Seite ]  1 123 246 369 492 615 738 861 984 1107 1183 1184 1185 1186 1187 1188 1189 1190 1191 1192 1193 1230 1235  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
FZT489TA DIODES INCORPORATED FZT489.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 4A
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZT589TA DIODES INCORPORATED FZT589.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 30V
Current gain: 40...300
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZT789AQTA DIODES INCORPORATED FZT789A.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Collector current: 3A
Pulsed collector current: 6A
Collector-emitter voltage: 25V
Current gain: 100...800
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCX589TA DIODES INCORPORATED FCX589.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 2.3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 2.3W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 30V
Current gain: 40...300
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FMMT589TA FMMT589TA DIODES INCORPORATED FMMT589.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Collector-emitter voltage: 30V
Quantity in set/package: 3000pcs.
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FMMT489TA DIODES INCORPORATED FMMT489.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 4A
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN4031SSD-13 DMN4031SSD-13 DIODES INCORPORATED DMN4031SSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN4031SSDQ-13 DMN4031SSDQ-13 DIODES INCORPORATED DMN4031SSDQ.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 40V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AP66300FVBW-13 DIODES INCORPORATED AP66300.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷60VDC; Uout: 0.8÷50VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...60V DC
Output voltage: 0.8...50V DC
Output current: 3A
Case: U-QDFN4040-16SWP Type UXB
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AP66300QFVBW-13 DIODES INCORPORATED AP66300Q.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷60VDC; Uout: 0.8÷50VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...60V DC
Output voltage: 0.8...50V DC
Output current: 3A
Case: U-QDFN4040-16SWP Type UXB
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ48CAQ-13-F SMAJ48CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ64A-13-F SMCJ64A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 14.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ64AQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1V; unidirectional; DO214AB,SMC; Ch: 1; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1V
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Number of channels: 1
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.39 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDS1045-13 DIODES INCORPORATED ds30539.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Max. forward voltage: 0.51V
Max. off-state voltage: 45V
Load current: 10A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 150mA
Case: PowerDI®5
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 275A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN30H4D0L-7 DMN30H4D0L-7 DIODES INCORPORATED DMN30H4D0L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 2A; 470mW; SOT23
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 7.6nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Drain current: 0.2A
On-state resistance: 6Ω
Power dissipation: 0.47W
Pulsed drain current: 2A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN30H4D0LFDE-7 DIODES INCORPORATED DMN30H4D0LFDE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 0.44A; 0.63W; U-DFN2020-6
Gate-source voltage: ±20V
Drain-source voltage: 300V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Drain current: 0.44A
On-state resistance: 6Ω
Power dissipation: 0.63W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN30H14DLY-13 DIODES INCORPORATED DMN30H14DLY.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 4nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT89
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 0.16A
On-state resistance: 20Ω
Power dissipation: 2.2W
Pulsed drain current: 1A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN30H4D0L-13 DMN30H4D0L-13 DIODES INCORPORATED DMN30H4D0L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 2A; 470mW; SOT23
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 7.6nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 0.2A
On-state resistance: 6Ω
Power dissipation: 0.47W
Pulsed drain current: 2A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN30H4D0LFDE-13 DIODES INCORPORATED DMN30H4D0LFDE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 430mA; Idm: 2A; 1.98W
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 7.6nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 0.43A
On-state resistance: 6Ω
Power dissipation: 1.98W
Pulsed drain current: 2A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN30H4D1S-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 2A
On-state resistance: 0.25Ω
Power dissipation: 1.69W
Pulsed drain current: 6A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN30H4D1S-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Drain current: 2A
On-state resistance: 0.25Ω
Power dissipation: 1.69W
Pulsed drain current: 6A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
B350B-13-F DIODES INCORPORATED B320B-B360B_Rev10-2.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 3A; reel,tape
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 0.2nF
Leakage current: 20mA
Max. forward voltage: 0.7V
Load current: 3A
Max. off-state voltage: 50V
Max. forward impulse current: 100A
Kind of package: reel; tape
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
74LVC573AQ20-13 DIODES INCORPORATED 74LVC573A.pdf Category: Latches
Description: IC: digital; 8bit,buffer; AND; Ch: 10; IN: 8; CMOS; 1.65÷3.6VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; buffer
Number of channels: 10
Supply voltage: 1.65...3.6V DC
Mounting: SMD
Case: V-QFN4525-20
Operating temperature: -40...150°C
Family: LVC
Kind of output: push-pull
Kind of package: reel; tape
Number of inputs: 8
Kind of gate: AND
Technology: CMOS
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
74LVC573AT20-13 74LVC573AT20-13 DIODES INCORPORATED 74LVC573A.pdf Category: Latches
Description: IC: digital; D latch; Ch: 8; IN: 1; CMOS; 1.65÷3.6VDC; SMD; TSSOP20
Operating temperature: -40...150°C
Kind of output: 3-state
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of package: reel; tape
Case: TSSOP20
Family: LVC
Kind of integrated circuit: D latch
Number of channels: 8
Mounting: SMD
Supply voltage: 1.65...3.6V DC
Type of integrated circuit: digital
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ40CA-13-F SMBJ40CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷51.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 172 Stücke:
Lieferzeit 14-21 Tag (e)
172+0.49 EUR
Mindestbestellmenge: 172 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ45CA-13-F SMBJ45CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 50÷57.5V; 8.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...57.5V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 1798 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.36 EUR
329+0.26 EUR
379+0.23 EUR
544+0.15 EUR
618+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 239 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ43CA-13-F SMBJ43CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷54.9V; 8.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 8.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 955 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.43 EUR
248+0.35 EUR
285+0.3 EUR
451+0.19 EUR
589+0.14 EUR
Mindestbestellmenge: 200 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ48CA-13-F SMBJ48CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷61.3V; 7.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ43A-13-F SMBJ43A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷54.9V; 8.6A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 8.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H220LVT-7 DMN10H220LVT-7 DIODES INCORPORATED DMN10H220LVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.79A; Idm: 6.6A; 1.07W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.79A
Pulsed drain current: 6.6A
Power dissipation: 1.07W
Case: TSOT26
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H220LQ-7 DMN10H220LQ-7 DIODES INCORPORATED DMN10H220LQ-7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H220L-13 DMN10H220L-13 DIODES INCORPORATED DMN10H220L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H220LE-13 DMN10H220LE-13 DIODES INCORPORATED DMN10H220LE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H220LQ-13 DMN10H220LQ-13 DIODES INCORPORATED DMN10H220LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 1.3W
Case: SOT23
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 4.1nC
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H220LFDF-7 DIODES INCORPORATED DMN10H220LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.7A
Pulsed drain current: 8.8A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H220LFVW-7 DIODES INCORPORATED DMN10H220LFVW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 44A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 44A
Power dissipation: 2.4W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H220LPDW-13 DIODES INCORPORATED DMN10H220LPDW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.4A; Idm: 32A; 2.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.4A
Pulsed drain current: 32A
Power dissipation: 2.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP4015SK3Q-13-01 DMP4015SK3Q-13-01 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -14A; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -14A
Case: DPAK; TO252
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5226BS-7-F MMSZ5226BS-7-F DIODES INCORPORATED mmsz52xxbs_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.3V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 4455 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.17 EUR
705+0.12 EUR
870+0.098 EUR
1417+0.06 EUR
3000+0.036 EUR
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
B130-13-F B130-13-F DIODES INCORPORATED b120-160b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 0.11nF
Max. forward voltage: 0.5V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 3506 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.2 EUR
538+0.15 EUR
742+0.11 EUR
966+0.088 EUR
1083+0.079 EUR
2000+0.069 EUR
2500+0.067 EUR
Mindestbestellmenge: 417 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN6068SEQ-13 DIODES INCORPORATED ds32033.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 20.8A; 3.7W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 20.8A
Power dissipation: 3.7W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 10.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AP8801SG-13 AP8801SG-13 DIODES INCORPORATED AP8801.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 0.8÷48VDC; 0.5A; SO8; SMD; 700kHz; 92%
Topology: buck
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Output current: 0.5A
Input voltage: 0.8...48V DC
Efficiency: 92%
Frequency: 700kHz
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP10H400SEQ-13 DMP10H400SEQ-13 DIODES INCORPORATED DMP10H400SEQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2.1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5221BQ-7-F MMSZ5221BQ-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 2.4V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
auf Bestellung 5410 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.032 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5221B-7-F MMSZ5221B-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 2.4V; SMD; reel,tape; SOD123; single diode
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Tolerance: ±5%
Zener voltage: 2.4V
auf Bestellung 1845 Stücke:
Lieferzeit 14-21 Tag (e)
834+0.1 EUR
1087+0.079 EUR
1299+0.065 EUR
1845+0.046 EUR
Mindestbestellmenge: 834 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG2302UK-7DMG2302UK-7
DMG2302UK-7DMG2302UK-7
 DMG2302UK-7 DIODES INCORPORATED DMG2302UK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23
Case: SOT23
Mounting: SMD
Drain current: 2.2A
Gate-source voltage: ±12V
Pulsed drain current: 12A
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 90mΩ
Power dissipation: 0.66W
auf Bestellung 4799 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.4 EUR
298+0.29 EUR
507+0.17 EUR
692+0.12 EUR
1000+0.11 EUR
1500+0.1 EUR
3000+0.092 EUR
Mindestbestellmenge: 209 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG2302UKQ-7 DMG2302UKQ-7 DIODES INCORPORATED DMG2302UKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Drain current: 2.2A
Gate-source voltage: ±12V
Pulsed drain current: 12A
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.4nC
On-state resistance: 0.12Ω
Power dissipation: 1.1W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMG2302UK-13 DMG2302UK-13 DIODES INCORPORATED DMG2302UK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Drain current: 2.2A
Gate-source voltage: ±12V
Pulsed drain current: 12A
Drain-source voltage: 20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.4nC
On-state resistance: 0.12Ω
Power dissipation: 1.1W
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG2302UKQ-13 DMG2302UKQ-13 DIODES INCORPORATED DMG2302UKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Drain current: 2.2A
Gate-source voltage: ±12V
Pulsed drain current: 12A
Drain-source voltage: 20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.4nC
On-state resistance: 0.12Ω
Power dissipation: 1.1W
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG2302UQ-7 DMG2302UQ-7 DIODES INCORPORATED DMG2302UQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Case: SOT23
Mounting: SMD
Drain current: 3.8A
Gate-source voltage: ±8V
Pulsed drain current: 25A
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 4.3nC
On-state resistance: 45mΩ
Power dissipation: 1.2W
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5230BS-7-F MMSZ5230BS-7-F DIODES INCORPORATED mmsz52xxbs_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; SOD323; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 0.2W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
Zener voltage: 4.7V
Type of diode: Zener
auf Bestellung 6405 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.23 EUR
610+0.14 EUR
685+0.12 EUR
1025+0.083 EUR
1425+0.06 EUR
1520+0.056 EUR
3000+0.05 EUR
6000+0.045 EUR
Mindestbestellmenge: 385 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSP75GTA BSP75GTA DIODES INCORPORATED BSP75G.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.6A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.55Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Control voltage: 60V DC
auf Bestellung 1359 Stücke:
Lieferzeit 14-21 Tag (e)
41+2.07 EUR
65+1.33 EUR
81+1.06 EUR
100+0.94 EUR
Mindestbestellmenge: 41 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ZXMS6004DGTA ZXMS6004DGTA DIODES INCORPORATED ZXMS6004DG.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
auf Bestellung 678 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.83 EUR
73+1.18 EUR
97+0.88 EUR
107+0.8 EUR
Mindestbestellmenge: 47 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ZTX958 DIODES INCORPORATED ZTX958.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.2W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 85MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ZTX958STZ DIODES INCORPORATED ZTX958.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.2W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 85MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8006ATR DIODES INCORPORATED PAM8006A.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 300kHz; Pout: 15W; Ch: 2; Amp.class: D; QFN32
Operating temperature: -40...125°C
Voltage supply range: 2.5...5.5V DC
Amplifier class: D
Kind of package: reel; tape
Case: QFN32
Number of channels: 2
Frequency: 300kHz
Mounting: SMD
Output power: 15W
Type of integrated circuit: audio amplifier
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
B350A-13-F B350A-13-F DIODES INCORPORATED B320A-13-F.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 3A; reel,tape; 850mW
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Capacitance: 0.2nF
Max. forward voltage: 0.7V
Power dissipation: 0.85W
Max. forward impulse current: 80A
Load current: 3A
Max. off-state voltage: 50V
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 5933 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.48 EUR
202+0.42 EUR
220+0.39 EUR
302+0.29 EUR
500+0.23 EUR
1000+0.2 EUR
2000+0.18 EUR
2500+0.17 EUR
5000+0.15 EUR
Mindestbestellmenge: 179 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
B360-13-F B360-13-F DIODES INCORPORATED b320-360.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Capacitance: 0.2nF
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 100A
auf Bestellung 520 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.8 EUR
141+0.61 EUR
166+0.51 EUR
288+0.3 EUR
500+0.21 EUR
Mindestbestellmenge: 107 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
B360BQ-13-F B360BQ-13-F DIODES INCORPORATED B340BQ-B360BQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Max. forward voltage: 0.7V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20mA
Case: SMB
Capacitance: 0.2nF
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B360Q-13-F DIODES INCORPORATED B320Q-B360Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Max. forward voltage: 0.7V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20mA
Case: SMC
Capacitance: 0.2nF
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZT489TA FZT489.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 4A
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZT589TA FZT589.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 30V
Current gain: 40...300
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZT789AQTA FZT789A.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Collector current: 3A
Pulsed collector current: 6A
Collector-emitter voltage: 25V
Current gain: 100...800
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCX589TA FCX589.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 2.3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 2.3W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 30V
Current gain: 40...300
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FMMT589TA FMMT589.pdf
FMMT589TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Collector-emitter voltage: 30V
Quantity in set/package: 3000pcs.
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FMMT489TA FMMT489.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 4A
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN4031SSD-13 DMN4031SSD.pdf
DMN4031SSD-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN4031SSDQ-13 DMN4031SSDQ.pdf
DMN4031SSDQ-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 40V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AP66300FVBW-13 AP66300.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷60VDC; Uout: 0.8÷50VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...60V DC
Output voltage: 0.8...50V DC
Output current: 3A
Case: U-QDFN4040-16SWP Type UXB
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AP66300QFVBW-13 AP66300Q.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷60VDC; Uout: 0.8÷50VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...60V DC
Output voltage: 0.8...50V DC
Output current: 3A
Case: U-QDFN4040-16SWP Type UXB
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ48CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ48CAQ-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ64A-13-F SMCJ_ser.pdf
SMCJ64A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 14.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ64AQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1V; unidirectional; DO214AB,SMC; Ch: 1; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1V
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Number of channels: 1
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.39 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDS1045-13 ds30539.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Max. forward voltage: 0.51V
Max. off-state voltage: 45V
Load current: 10A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 150mA
Case: PowerDI®5
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 275A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN30H4D0L-7 DMN30H4D0L.pdf
DMN30H4D0L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 2A; 470mW; SOT23
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 7.6nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Drain current: 0.2A
On-state resistance: 6Ω
Power dissipation: 0.47W
Pulsed drain current: 2A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN30H4D0LFDE-7 DMN30H4D0LFDE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 0.44A; 0.63W; U-DFN2020-6
Gate-source voltage: ±20V
Drain-source voltage: 300V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Drain current: 0.44A
On-state resistance: 6Ω
Power dissipation: 0.63W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN30H14DLY-13 DMN30H14DLY.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 4nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT89
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 0.16A
On-state resistance: 20Ω
Power dissipation: 2.2W
Pulsed drain current: 1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN30H4D0L-13 DMN30H4D0L.pdf
DMN30H4D0L-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 2A; 470mW; SOT23
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 7.6nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 0.2A
On-state resistance: 6Ω
Power dissipation: 0.47W
Pulsed drain current: 2A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN30H4D0LFDE-13 DMN30H4D0LFDE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 430mA; Idm: 2A; 1.98W
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 7.6nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 0.43A
On-state resistance: 6Ω
Power dissipation: 1.98W
Pulsed drain current: 2A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN30H4D1S-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 2A
On-state resistance: 0.25Ω
Power dissipation: 1.69W
Pulsed drain current: 6A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN30H4D1S-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Drain current: 2A
On-state resistance: 0.25Ω
Power dissipation: 1.69W
Pulsed drain current: 6A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
B350B-13-F B320B-B360B_Rev10-2.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 3A; reel,tape
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 0.2nF
Leakage current: 20mA
Max. forward voltage: 0.7V
Load current: 3A
Max. off-state voltage: 50V
Max. forward impulse current: 100A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
74LVC573AQ20-13 74LVC573A.pdf
Hersteller: DIODES INCORPORATED
Category: Latches
Description: IC: digital; 8bit,buffer; AND; Ch: 10; IN: 8; CMOS; 1.65÷3.6VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; buffer
Number of channels: 10
Supply voltage: 1.65...3.6V DC
Mounting: SMD
Case: V-QFN4525-20
Operating temperature: -40...150°C
Family: LVC
Kind of output: push-pull
Kind of package: reel; tape
Number of inputs: 8
Kind of gate: AND
Technology: CMOS
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
74LVC573AT20-13 74LVC573A.pdf
74LVC573AT20-13
Hersteller: DIODES INCORPORATED
Category: Latches
Description: IC: digital; D latch; Ch: 8; IN: 1; CMOS; 1.65÷3.6VDC; SMD; TSSOP20
Operating temperature: -40...150°C
Kind of output: 3-state
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of package: reel; tape
Case: TSSOP20
Family: LVC
Kind of integrated circuit: D latch
Number of channels: 8
Mounting: SMD
Supply voltage: 1.65...3.6V DC
Type of integrated circuit: digital
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ40CA-13-F SMBJ_ser.pdf
SMBJ40CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷51.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 172 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
172+0.49 EUR
Mindestbestellmenge: 172 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ45CA-13-F SMBJ_ser.pdf
SMBJ45CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 50÷57.5V; 8.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...57.5V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 1798 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
239+0.36 EUR
329+0.26 EUR
379+0.23 EUR
544+0.15 EUR
618+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 239 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ43CA-13-F SMBJ_ser.pdf
SMBJ43CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷54.9V; 8.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 8.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 955 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
200+0.43 EUR
248+0.35 EUR
285+0.3 EUR
451+0.19 EUR
589+0.14 EUR
Mindestbestellmenge: 200 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ48CA-13-F SMBJ_ser.pdf
SMBJ48CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷61.3V; 7.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ43A-13-F SMBJ_ser.pdf
SMBJ43A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷54.9V; 8.6A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 8.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H220LVT-7 DMN10H220LVT.pdf
DMN10H220LVT-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.79A; Idm: 6.6A; 1.07W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.79A
Pulsed drain current: 6.6A
Power dissipation: 1.07W
Case: TSOT26
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H220LQ-7 DMN10H220LQ-7.pdf
DMN10H220LQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H220L-13 DMN10H220L.pdf
DMN10H220L-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H220LE-13 DMN10H220LE.pdf
DMN10H220LE-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H220LQ-13 DMN10H220LQ.pdf
DMN10H220LQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 1.3W
Case: SOT23
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 4.1nC
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H220LFDF-7 DMN10H220LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.7A
Pulsed drain current: 8.8A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H220LFVW-7 DMN10H220LFVW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 44A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 44A
Power dissipation: 2.4W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H220LPDW-13 DMN10H220LPDW.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.4A; Idm: 32A; 2.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.4A
Pulsed drain current: 32A
Power dissipation: 2.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP4015SK3Q-13-01
DMP4015SK3Q-13-01
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -14A; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -14A
Case: DPAK; TO252
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5226BS-7-F mmsz52xxbs_ser.pdf
MMSZ5226BS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.3V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 4455 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
500+0.17 EUR
705+0.12 EUR
870+0.098 EUR
1417+0.06 EUR
3000+0.036 EUR
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
B130-13-F b120-160b.pdf
B130-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 0.11nF
Max. forward voltage: 0.5V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 3506 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
417+0.2 EUR
538+0.15 EUR
742+0.11 EUR
966+0.088 EUR
1083+0.079 EUR
2000+0.069 EUR
2500+0.067 EUR
Mindestbestellmenge: 417 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN6068SEQ-13 ds32033.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 20.8A; 3.7W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 20.8A
Power dissipation: 3.7W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 10.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AP8801SG-13 AP8801.pdf
AP8801SG-13
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 0.8÷48VDC; 0.5A; SO8; SMD; 700kHz; 92%
Topology: buck
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Output current: 0.5A
Input voltage: 0.8...48V DC
Efficiency: 92%
Frequency: 700kHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP10H400SEQ-13 DMP10H400SEQ.pdf
DMP10H400SEQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2.1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5221BQ-7-F mmsz52xxb_Ser.pdf
MMSZ5221BQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 2.4V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
auf Bestellung 5410 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.032 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5221B-7-F mmsz52xxb_Ser.pdf
MMSZ5221B-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 2.4V; SMD; reel,tape; SOD123; single diode
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Tolerance: ±5%
Zener voltage: 2.4V
auf Bestellung 1845 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
834+0.1 EUR
1087+0.079 EUR
1299+0.065 EUR
1845+0.046 EUR
Mindestbestellmenge: 834 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG2302UK-7 DMG2302UK.pdf
DMG2302UK-7DMG2302UK-7
DMG2302UK-7DMG2302UK-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23
Case: SOT23
Mounting: SMD
Drain current: 2.2A
Gate-source voltage: ±12V
Pulsed drain current: 12A
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 90mΩ
Power dissipation: 0.66W
auf Bestellung 4799 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
209+0.4 EUR
298+0.29 EUR
507+0.17 EUR
692+0.12 EUR
1000+0.11 EUR
1500+0.1 EUR
3000+0.092 EUR
Mindestbestellmenge: 209 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG2302UKQ-7 DMG2302UKQ.pdf
DMG2302UKQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Drain current: 2.2A
Gate-source voltage: ±12V
Pulsed drain current: 12A
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.4nC
On-state resistance: 0.12Ω
Power dissipation: 1.1W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMG2302UK-13 DMG2302UK.pdf
DMG2302UK-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Drain current: 2.2A
Gate-source voltage: ±12V
Pulsed drain current: 12A
Drain-source voltage: 20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.4nC
On-state resistance: 0.12Ω
Power dissipation: 1.1W
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG2302UKQ-13 DMG2302UKQ.pdf
DMG2302UKQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Drain current: 2.2A
Gate-source voltage: ±12V
Pulsed drain current: 12A
Drain-source voltage: 20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.4nC
On-state resistance: 0.12Ω
Power dissipation: 1.1W
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG2302UQ-7 DMG2302UQ.pdf
DMG2302UQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Case: SOT23
Mounting: SMD
Drain current: 3.8A
Gate-source voltage: ±8V
Pulsed drain current: 25A
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 4.3nC
On-state resistance: 45mΩ
Power dissipation: 1.2W
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5230BS-7-F mmsz52xxbs_ser.pdf
MMSZ5230BS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; SOD323; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 0.2W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
Zener voltage: 4.7V
Type of diode: Zener
auf Bestellung 6405 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
385+0.23 EUR
610+0.14 EUR
685+0.12 EUR
1025+0.083 EUR
1425+0.06 EUR
1520+0.056 EUR
3000+0.05 EUR
6000+0.045 EUR
Mindestbestellmenge: 385 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSP75GTA BSP75G.pdf
BSP75GTA
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.6A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.55Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Control voltage: 60V DC
auf Bestellung 1359 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
41+2.07 EUR
65+1.33 EUR
81+1.06 EUR
100+0.94 EUR
Mindestbestellmenge: 41 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ZXMS6004DGTA ZXMS6004DG.pdf
ZXMS6004DGTA
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
auf Bestellung 678 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
47+1.83 EUR
73+1.18 EUR
97+0.88 EUR
107+0.8 EUR
Mindestbestellmenge: 47 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ZTX958 ZTX958.pdf
Hersteller: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.2W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 85MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ZTX958STZ ZTX958.pdf
Hersteller: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.2W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 85MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8006ATR PAM8006A.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 300kHz; Pout: 15W; Ch: 2; Amp.class: D; QFN32
Operating temperature: -40...125°C
Voltage supply range: 2.5...5.5V DC
Amplifier class: D
Kind of package: reel; tape
Case: QFN32
Number of channels: 2
Frequency: 300kHz
Mounting: SMD
Output power: 15W
Type of integrated circuit: audio amplifier
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
B350A-13-F B320A-13-F.pdf
B350A-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 3A; reel,tape; 850mW
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Capacitance: 0.2nF
Max. forward voltage: 0.7V
Power dissipation: 0.85W
Max. forward impulse current: 80A
Load current: 3A
Max. off-state voltage: 50V
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 5933 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
179+0.48 EUR
202+0.42 EUR
220+0.39 EUR
302+0.29 EUR
500+0.23 EUR
1000+0.2 EUR
2000+0.18 EUR
2500+0.17 EUR
5000+0.15 EUR
Mindestbestellmenge: 179 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
B360-13-F b320-360.pdf
B360-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Capacitance: 0.2nF
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 100A
auf Bestellung 520 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
107+0.8 EUR
141+0.61 EUR
166+0.51 EUR
288+0.3 EUR
500+0.21 EUR
Mindestbestellmenge: 107 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
B360BQ-13-F B340BQ-B360BQ.pdf
B360BQ-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Max. forward voltage: 0.7V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20mA
Case: SMB
Capacitance: 0.2nF
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B360Q-13-F B320Q-B360Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Max. forward voltage: 0.7V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20mA
Case: SMC
Capacitance: 0.2nF
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 123 246 369 492 615 738 861 984 1107 1183 1184 1185 1186 1187 1188 1189 1190 1191 1192 1193 1230 1235  [ Nächste Seite >> ]