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AP2114H-3.3TRG1 AP2114H-3.3TRG1 DIODES INCORPORATED AP2114.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
auf Bestellung 2054 Stücke:
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278+0.26 EUR
348+0.21 EUR
391+0.18 EUR
451+0.16 EUR
544+0.13 EUR
596+0.12 EUR
633+0.11 EUR
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AZ1117H-3.3TRG1 AZ1117H-3.3TRG1 DIODES INCORPORATED AZ1117_Rev5.3_Jan2019_DS.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.25V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
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AZ1117R-3.3TRE1 AZ1117R-3.3TRE1 DIODES INCORPORATED AZ1117_Rev5.3_Jan2019_DS.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.25V
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Manufacturer series: AZ1117
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
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AZ1117ID-3.3TRG1 DIODES INCORPORATED AZ1117I.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.4V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117I
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
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AZ1117IH-3.3TRG1 AZ1117IH-3.3TRG1 DIODES INCORPORATED AZ1117I.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117I
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
auf Bestellung 11901 Stücke:
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414+0.17 EUR
468+0.15 EUR
569+0.13 EUR
625+0.11 EUR
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BZX84C12S-7-F BZX84C12S-7-F DIODES INCORPORATED BZX84CxxS_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; SMD; reel,tape; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
auf Bestellung 2890 Stücke:
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363+0.2 EUR
562+0.13 EUR
1238+0.058 EUR
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SMAJ24A-13-F SMAJ24A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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285+0.25 EUR
329+0.22 EUR
504+0.14 EUR
599+0.12 EUR
733+0.098 EUR
1000+0.08 EUR
3000+0.072 EUR
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74HC126S14-13 74HC126S14-13 DIODES INCORPORATED 74HC126.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Quiescent current: 40µA
Kind of output: 3-state
Manufacturer series: HC
auf Bestellung 1588 Stücke:
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239+0.3 EUR
295+0.24 EUR
334+0.21 EUR
391+0.18 EUR
477+0.15 EUR
521+0.14 EUR
544+0.13 EUR
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74HC126T14-13 74HC126T14-13 DIODES INCORPORATED 74HC126.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Quiescent current: 40µA
Kind of output: 3-state
Manufacturer series: HC
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295+0.24 EUR
334+0.21 EUR
391+0.18 EUR
477+0.15 EUR
521+0.14 EUR
544+0.13 EUR
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74HC138S16-13 DIODES INCORPORATED 74HC138.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Number of channels: 8
Number of inputs: 6
Mounting: SMD
Case: SO16
Family: HC
Operating temperature: -40...150°C
Supply voltage: 2...6V DC
Technology: CMOS
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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74HC138T16-13 DIODES INCORPORATED 74HC138.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Number of channels: 8
Number of inputs: 6
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -40...150°C
Supply voltage: 2...6V DC
Technology: CMOS
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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BZT52C15-7-F BZT52C15-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 3296 Stücke:
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715+0.1 EUR
834+0.086 EUR
944+0.076 EUR
1603+0.045 EUR
1873+0.038 EUR
2253+0.032 EUR
2552+0.028 EUR
3049+0.023 EUR
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AS7805AT-E1 AS7805AT-E1 DIODES INCORPORATED AS78XXA.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; TO220-3; THT; AS78XXA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: TO220-3
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7.5...20V
Manufacturer series: AS78XXA
auf Bestellung 663 Stücke:
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162+0.44 EUR
230+0.31 EUR
248+0.29 EUR
266+0.27 EUR
285+0.25 EUR
315+0.23 EUR
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DF10M DF10M DIODES INCORPORATED DF005_10M.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DFM
Features of semiconductor devices: glass passivated
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Load current: 1A
Max. off-state voltage: 1kV
Case: DFM
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BZT52C5V1-13-F BZT52C5V1-13-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Tolerance: ±6%
auf Bestellung 9840 Stücke:
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736+0.097 EUR
848+0.084 EUR
1713+0.042 EUR
2440+0.029 EUR
2660+0.027 EUR
2825+0.025 EUR
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BZT52C5V1-7-F BZT52C5V1-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
auf Bestellung 7799 Stücke:
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715+0.1 EUR
1087+0.066 EUR
1352+0.053 EUR
2488+0.029 EUR
3125+0.023 EUR
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BZT52C5V1S-7-F BZT52C5V1S-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±6%
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259+0.27 EUR
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BZT52C5V1SQ-7-F BZT52C5V1SQ-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±6%
Application: automotive industry
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300+0.24 EUR
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DF08S-T DF08S-T DIODES INCORPORATED DF005_10S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.8kV
Load current: 1A
Case: DFS
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Electrical mounting: SMT
auf Bestellung 1183 Stücke:
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97+0.74 EUR
116+0.62 EUR
139+0.52 EUR
191+0.38 EUR
269+0.27 EUR
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DMT3020LFDBQ-7 DIODES INCORPORATED DMT3020LFDBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT6002LPS-13 DIODES INCORPORATED DMT6002LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 130.8nC
On-state resistance: 3mΩ
Power dissipation: 2.3W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6004LPS-13 DIODES INCORPORATED DMT6004LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 78.3nC
On-state resistance: 4.5mΩ
Power dissipation: 2.5W
Drain current: 16A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6004SCT DMT6004SCT DIODES INCORPORATED DMT6004SCT.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB
Case: TO220AB
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 113W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 180A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6004SPS-13 DIODES INCORPORATED DMT6004SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 2.6W
Drain current: 18A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6005LFG-13 DIODES INCORPORATED DMT6005LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 48.7nC
On-state resistance: 7mΩ
Power dissipation: 1.98W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6005LFG-7 DIODES INCORPORATED DMT6005LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 48.7nC
On-state resistance: 7mΩ
Power dissipation: 1.98W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6005LPS-13 DIODES INCORPORATED DMT6005LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 47.1nC
On-state resistance: 6.5mΩ
Power dissipation: 2.6W
Drain current: 14.7A
Gate-source voltage: ±20V
Pulsed drain current: 500A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6006LK3-13 DIODES INCORPORATED DMT6006LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 3.1W
Drain current: 71A
Gate-source voltage: ±20V
Pulsed drain current: 350A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6006LSS-13 DMT6006LSS-13 DIODES INCORPORATED DMT6006LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 2.08W
Drain current: 11.7A
Gate-source voltage: ±20V
Pulsed drain current: 110A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6006SPS-13 DIODES INCORPORATED DMT6006SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 27.9nC
On-state resistance: 6.2mΩ
Power dissipation: 2.45W
Drain current: 13A
Gate-source voltage: ±20V
Pulsed drain current: 390A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6007LFG-13 DIODES INCORPORATED DMT6007LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6007LFG-7 DMT6007LFG-7 DIODES INCORPORATED DMT6007LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 70A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
auf Bestellung 1681 Stücke:
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70+1.03 EUR
81+0.89 EUR
87+0.83 EUR
100+0.72 EUR
Mindestbestellmenge: 70
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DMT6007LFGQ-13 DIODES INCORPORATED DMT6007LFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
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DMT6007LFGQ-7 DIODES INCORPORATED DMT6007LFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6008LFG-13 DIODES INCORPORATED DMT6008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6008LFG-7 DIODES INCORPORATED DMT6008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMBJ30A-13-F SMBJ30A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3515 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
257+0.28 EUR
472+0.15 EUR
633+0.11 EUR
1000+0.1 EUR
3000+0.093 EUR
Mindestbestellmenge: 157
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AP2112K-1.2TRG1 AP2112K-1.2TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 0.6A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2112K-2.5TRG1 AP2112K-2.5TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 2.5V
Output current: 0.6A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
auf Bestellung 2915 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
385+0.19 EUR
435+0.16 EUR
511+0.14 EUR
625+0.11 EUR
685+0.1 EUR
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DMC3021LSD-13 DMC3021LSD-13 DIODES INCORPORATED DMC3021LSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Mounting: SMD
Power dissipation: 2.5W
Drain current: 7/-8.5A
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Kind of channel: enhancement
Case: SO8
On-state resistance: 0.021/0.039Ω
auf Bestellung 1506 Stücke:
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84+0.86 EUR
115+0.63 EUR
140+0.51 EUR
165+0.43 EUR
192+0.37 EUR
500+0.27 EUR
1000+0.24 EUR
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BSS127S-7 BSS127S-7 DIODES INCORPORATED BSS127.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 70mA
Power dissipation: 0.61W
On-state resistance: 160Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 1871 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
291+0.25 EUR
421+0.17 EUR
500+0.14 EUR
725+0.099 EUR
1000+0.086 EUR
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SMBJ58A-13-F SMBJ58A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2341 Stücke:
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358+0.2 EUR
424+0.17 EUR
477+0.15 EUR
575+0.12 EUR
642+0.11 EUR
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74HCT125S14-13 74HCT125S14-13 DIODES INCORPORATED 74HCT125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; SO14; HCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SO14
Operating temperature: -40...125°C
Kind of package: reel; tape
Mounting: SMD
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Technology: CMOS; TTL
Manufacturer series: HCT
Number of channels: 4
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
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TL431ASA-7 TL431ASA-7 DIODES INCORPORATED TL431_432.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 2889 Stücke:
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358+0.2 EUR
432+0.17 EUR
486+0.15 EUR
569+0.13 EUR
667+0.11 EUR
705+0.1 EUR
782+0.092 EUR
794+0.09 EUR
807+0.089 EUR
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AP63300WU-7 AP63300WU-7 DIODES INCORPORATED AP63300-AP63301.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 0.8÷31VDC; 3A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 0.8...31V DC
Output current: 3A
Case: TSOT26
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 96%
auf Bestellung 8678 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
97+0.74 EUR
107+0.67 EUR
115+0.62 EUR
122+0.59 EUR
250+0.55 EUR
500+0.53 EUR
1000+0.52 EUR
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BAS40-06-7-F BAS40-06-7-F DIODES INCORPORATED BAS40_-04_-05_-06.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
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PAM8016AKR DIODES INCORPORATED PAM8016.pdf Category: Motor and PWM drivers
Description: IC: driver; H-bridge; haptic motor controller; PWM; U-FLGA1515-9
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: haptic motor controller
Interface: PWM
Case: U-FLGA1515-9
Integrated circuit features: Eccentric Rotating Mass (ERM); Linear Resonance Acutator (LRA)
Mounting: SMD
Operating temperature: -25...85°C
Application: haptic motors; linear actuator; servos
Operating voltage: 2.8...5.5V DC
Produkt ist nicht verfügbar
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BSS123-7-F BSS123-7-F DIODES INCORPORATED BSS123-7-F.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.3W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 14066 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
455+0.16 EUR
788+0.091 EUR
1153+0.062 EUR
1352+0.053 EUR
3000+0.041 EUR
6000+0.036 EUR
9000+0.033 EUR
Mindestbestellmenge: 295
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BSS123Q-13 BSS123Q-13 DIODES INCORPORATED BSS123Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 680mA; 0.3W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.3W
Pulsed drain current: 0.68A
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 7480 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
414+0.17 EUR
742+0.096 EUR
1092+0.065 EUR
1260+0.057 EUR
2000+0.051 EUR
5000+0.046 EUR
Mindestbestellmenge: 278
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BSS123Q-7 BSS123Q-7 DIODES INCORPORATED BSS123Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.3W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 1136 Stücke:
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334+0.21 EUR
511+0.14 EUR
878+0.082 EUR
1136+0.063 EUR
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BSS123TA BSS123TA DIODES INCORPORATED BSS123.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.3W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 2881 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
224+0.32 EUR
335+0.21 EUR
403+0.18 EUR
612+0.12 EUR
1000+0.099 EUR
Mindestbestellmenge: 152
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BSS123W-7-F BSS123W-7-F DIODES INCORPORATED BSS123W.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323
Case: SOT323
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.2W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 2551 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
261+0.27 EUR
397+0.18 EUR
949+0.075 EUR
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BSS123WQ-7-F BSS123WQ-7-F DIODES INCORPORATED BSS123WQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323
Case: SOT323
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.2W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 174 Stücke:
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174+0.41 EUR
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SMAJ12CA-13-F SMAJ12CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 2371 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
472+0.15 EUR
556+0.13 EUR
687+0.1 EUR
815+0.088 EUR
939+0.076 EUR
1102+0.065 EUR
1270+0.056 EUR
Mindestbestellmenge: 385
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B550C-13-F B550C-13-F DIODES INCORPORATED B5X0C-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 5A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 300pF
Max. forward voltage: 0.7V
Max. forward impulse current: 100A
Load current: 5A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMC
auf Bestellung 2897 Stücke:
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97+0.74 EUR
122+0.59 EUR
136+0.53 EUR
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DMG1024UV-7 DMG1024UV-7 DIODES INCORPORATED DMG1024UV-DTE.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.89A; 0.53W; SOT563; ESD
Kind of package: 7 inch reel; tape
Case: SOT563
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.89A
On-state resistance: 0.45Ω
Power dissipation: 0.53W
Gate-source voltage: ±6V
Kind of channel: enhancement
Version: ESD
auf Bestellung 3043 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
205+0.35 EUR
345+0.21 EUR
428+0.17 EUR
589+0.12 EUR
Mindestbestellmenge: 148
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DMC3025LSD-13 DMC3025LSD-13 DIODES INCORPORATED DMC3025LSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.5/-8.5A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.02/0.045Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 124 Stücke:
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95+0.76 EUR
124+0.57 EUR
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DMC4015SSD-13 DMC4015SSD-13 DIODES INCORPORATED DMC4015SSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Kind of transistor: complementary pair
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 9.5/-12.2A
On-state resistance: 0.015/0.029Ω
Power dissipation: 1.7W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 1599 Stücke:
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54+1.33 EUR
106+0.68 EUR
127+0.56 EUR
Mindestbestellmenge: 54
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BAV70T-7-F BAV70T-7-F DIODES INCORPORATED BAS16T_BAW56T_BAV70T_BAV99T.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 1828 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
746+0.096 EUR
1071+0.067 EUR
1250+0.057 EUR
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AL5809-100P1-7 AL5809-100P1-7 DIODES INCORPORATED AL5809-DTE.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Output current: 0.1A
Case: PowerDI®123
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
Operating voltage: 2.5...60V DC
auf Bestellung 1663 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
196+0.37 EUR
220+0.33 EUR
229+0.31 EUR
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AP2114H-3.3TRG1 AP2114.pdf
AP2114H-3.3TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
auf Bestellung 2054 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
348+0.21 EUR
391+0.18 EUR
451+0.16 EUR
544+0.13 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 278
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AZ1117H-3.3TRG1 AZ1117_Rev5.3_Jan2019_DS.pdf
AZ1117H-3.3TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.25V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AZ1117R-3.3TRE1 AZ1117_Rev5.3_Jan2019_DS.pdf
AZ1117R-3.3TRE1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.25V
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Manufacturer series: AZ1117
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AZ1117ID-3.3TRG1 AZ1117I.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.4V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117I
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AZ1117IH-3.3TRG1 AZ1117I.pdf
AZ1117IH-3.3TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117I
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
auf Bestellung 11901 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
414+0.17 EUR
468+0.15 EUR
569+0.13 EUR
625+0.11 EUR
Mindestbestellmenge: 295
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BZX84C12S-7-F BZX84CxxS_SER.pdf
BZX84C12S-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; SMD; reel,tape; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
363+0.2 EUR
562+0.13 EUR
1238+0.058 EUR
Mindestbestellmenge: 250
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SMAJ24A-13-F SMAJ_ser.pdf
SMAJ24A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 8630 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
285+0.25 EUR
329+0.22 EUR
504+0.14 EUR
599+0.12 EUR
733+0.098 EUR
1000+0.08 EUR
3000+0.072 EUR
Mindestbestellmenge: 239
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74HC126S14-13 74HC126.pdf
74HC126S14-13
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Quiescent current: 40µA
Kind of output: 3-state
Manufacturer series: HC
auf Bestellung 1588 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
295+0.24 EUR
334+0.21 EUR
391+0.18 EUR
477+0.15 EUR
521+0.14 EUR
544+0.13 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
74HC126T14-13 74HC126.pdf
74HC126T14-13
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Quiescent current: 40µA
Kind of output: 3-state
Manufacturer series: HC
auf Bestellung 2365 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
295+0.24 EUR
334+0.21 EUR
391+0.18 EUR
477+0.15 EUR
521+0.14 EUR
544+0.13 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
74HC138S16-13 74HC138.pdf
Hersteller: DIODES INCORPORATED
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Number of channels: 8
Number of inputs: 6
Mounting: SMD
Case: SO16
Family: HC
Operating temperature: -40...150°C
Supply voltage: 2...6V DC
Technology: CMOS
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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74HC138T16-13 74HC138.pdf
Hersteller: DIODES INCORPORATED
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Number of channels: 8
Number of inputs: 6
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -40...150°C
Supply voltage: 2...6V DC
Technology: CMOS
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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BZT52C15-7-F BZT52Cxx_ser.pdf
BZT52C15-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 3296 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
834+0.086 EUR
944+0.076 EUR
1603+0.045 EUR
1873+0.038 EUR
2253+0.032 EUR
2552+0.028 EUR
3049+0.023 EUR
Mindestbestellmenge: 715
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AS7805AT-E1 AS78XXA.pdf
AS7805AT-E1
Hersteller: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; TO220-3; THT; AS78XXA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: TO220-3
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7.5...20V
Manufacturer series: AS78XXA
auf Bestellung 663 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
230+0.31 EUR
248+0.29 EUR
266+0.27 EUR
285+0.25 EUR
315+0.23 EUR
Mindestbestellmenge: 162
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DF10M DF005_10M.pdf
DF10M
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DFM
Features of semiconductor devices: glass passivated
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Load current: 1A
Max. off-state voltage: 1kV
Case: DFM
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
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BZT52C5V1-13-F BZT52Cxx_ser.pdf
BZT52C5V1-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Tolerance: ±6%
auf Bestellung 9840 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
736+0.097 EUR
848+0.084 EUR
1713+0.042 EUR
2440+0.029 EUR
2660+0.027 EUR
2825+0.025 EUR
Mindestbestellmenge: 625
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BZT52C5V1-7-F BZT52Cxx_ser.pdf
BZT52C5V1-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
auf Bestellung 7799 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
1087+0.066 EUR
1352+0.053 EUR
2488+0.029 EUR
3125+0.023 EUR
Mindestbestellmenge: 715
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BZT52C5V1S-7-F BZT52CxxS_ser.pdf
BZT52C5V1S-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±6%
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
259+0.27 EUR
Mindestbestellmenge: 259
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BZT52C5V1SQ-7-F BZT52CxxS_ser.pdf
BZT52C5V1SQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±6%
Application: automotive industry
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
300+0.24 EUR
Mindestbestellmenge: 300
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DF08S-T DF005_10S.pdf
DF08S-T
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.8kV
Load current: 1A
Case: DFS
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Electrical mounting: SMT
auf Bestellung 1183 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
116+0.62 EUR
139+0.52 EUR
191+0.38 EUR
269+0.27 EUR
Mindestbestellmenge: 97
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DMT3020LFDBQ-7 DMT3020LFDBQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT6002LPS-13 DMT6002LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 130.8nC
On-state resistance: 3mΩ
Power dissipation: 2.3W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6004LPS-13 DMT6004LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 78.3nC
On-state resistance: 4.5mΩ
Power dissipation: 2.5W
Drain current: 16A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6004SCT DMT6004SCT.pdf
DMT6004SCT
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB
Case: TO220AB
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 113W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 180A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6004SPS-13 DMT6004SPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 2.6W
Drain current: 18A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6005LFG-13 DMT6005LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 48.7nC
On-state resistance: 7mΩ
Power dissipation: 1.98W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6005LFG-7 DMT6005LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 48.7nC
On-state resistance: 7mΩ
Power dissipation: 1.98W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6005LPS-13 DMT6005LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 47.1nC
On-state resistance: 6.5mΩ
Power dissipation: 2.6W
Drain current: 14.7A
Gate-source voltage: ±20V
Pulsed drain current: 500A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6006LK3-13 DMT6006LK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 3.1W
Drain current: 71A
Gate-source voltage: ±20V
Pulsed drain current: 350A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6006LSS-13 DMT6006LSS.pdf
DMT6006LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 2.08W
Drain current: 11.7A
Gate-source voltage: ±20V
Pulsed drain current: 110A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6006SPS-13 DMT6006SPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 27.9nC
On-state resistance: 6.2mΩ
Power dissipation: 2.45W
Drain current: 13A
Gate-source voltage: ±20V
Pulsed drain current: 390A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6007LFG-13 DMT6007LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6007LFG-7 DMT6007LFG.pdf
DMT6007LFG-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 70A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
auf Bestellung 1681 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
81+0.89 EUR
87+0.83 EUR
100+0.72 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
DMT6007LFGQ-13 DMT6007LFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6007LFGQ-7 DMT6007LFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6008LFG-13 DMT6008LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6008LFG-7 DMT6008LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMBJ30A-13-F SMBJ_ser.pdf
SMBJ30A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3515 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
257+0.28 EUR
472+0.15 EUR
633+0.11 EUR
1000+0.1 EUR
3000+0.093 EUR
Mindestbestellmenge: 157
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AP2112K-1.2TRG1 AP2112.pdf
AP2112K-1.2TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 0.6A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
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AP2112K-2.5TRG1 AP2112.pdf
AP2112K-2.5TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 2.5V
Output current: 0.6A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
auf Bestellung 2915 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
385+0.19 EUR
435+0.16 EUR
511+0.14 EUR
625+0.11 EUR
685+0.1 EUR
Mindestbestellmenge: 313
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DMC3021LSD-13 DMC3021LSD-13.pdf
DMC3021LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Mounting: SMD
Power dissipation: 2.5W
Drain current: 7/-8.5A
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Kind of channel: enhancement
Case: SO8
On-state resistance: 0.021/0.039Ω
auf Bestellung 1506 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
115+0.63 EUR
140+0.51 EUR
165+0.43 EUR
192+0.37 EUR
500+0.27 EUR
1000+0.24 EUR
Mindestbestellmenge: 84
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BSS127S-7 BSS127.pdf
BSS127S-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 70mA
Power dissipation: 0.61W
On-state resistance: 160Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 1871 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
291+0.25 EUR
421+0.17 EUR
500+0.14 EUR
725+0.099 EUR
1000+0.086 EUR
Mindestbestellmenge: 193
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SMBJ58A-13-F SMBJ_ser.pdf
SMBJ58A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2341 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
424+0.17 EUR
477+0.15 EUR
575+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 358
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74HCT125S14-13 74HCT125.pdf
74HCT125S14-13
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; SO14; HCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SO14
Operating temperature: -40...125°C
Kind of package: reel; tape
Mounting: SMD
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Technology: CMOS; TTL
Manufacturer series: HCT
Number of channels: 4
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
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TL431ASA-7 TL431_432.pdf
TL431ASA-7
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 2889 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
432+0.17 EUR
486+0.15 EUR
569+0.13 EUR
667+0.11 EUR
705+0.1 EUR
782+0.092 EUR
794+0.09 EUR
807+0.089 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
AP63300WU-7 AP63300-AP63301.pdf
AP63300WU-7
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 0.8÷31VDC; 3A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 0.8...31V DC
Output current: 3A
Case: TSOT26
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 96%
auf Bestellung 8678 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
97+0.74 EUR
107+0.67 EUR
115+0.62 EUR
122+0.59 EUR
250+0.55 EUR
500+0.53 EUR
1000+0.52 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
BAS40-06-7-F BAS40_-04_-05_-06.pdf
BAS40-06-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Produkt ist nicht verfügbar
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PAM8016AKR PAM8016.pdf
Hersteller: DIODES INCORPORATED
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; haptic motor controller; PWM; U-FLGA1515-9
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: haptic motor controller
Interface: PWM
Case: U-FLGA1515-9
Integrated circuit features: Eccentric Rotating Mass (ERM); Linear Resonance Acutator (LRA)
Mounting: SMD
Operating temperature: -25...85°C
Application: haptic motors; linear actuator; servos
Operating voltage: 2.8...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS123-7-F BSS123-7-F.pdf
BSS123-7-F
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.3W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 14066 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
455+0.16 EUR
788+0.091 EUR
1153+0.062 EUR
1352+0.053 EUR
3000+0.041 EUR
6000+0.036 EUR
9000+0.033 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
BSS123Q-13 BSS123Q.pdf
BSS123Q-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 680mA; 0.3W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.3W
Pulsed drain current: 0.68A
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 7480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
414+0.17 EUR
742+0.096 EUR
1092+0.065 EUR
1260+0.057 EUR
2000+0.051 EUR
5000+0.046 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
BSS123Q-7 BSS123Q.pdf
BSS123Q-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.3W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 1136 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
511+0.14 EUR
878+0.082 EUR
1136+0.063 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
BSS123TA BSS123.pdf
BSS123TA
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.3W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 2881 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
224+0.32 EUR
335+0.21 EUR
403+0.18 EUR
612+0.12 EUR
1000+0.099 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
BSS123W-7-F BSS123W.pdf
BSS123W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323
Case: SOT323
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.2W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 2551 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
261+0.27 EUR
397+0.18 EUR
949+0.075 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
BSS123WQ-7-F BSS123WQ.pdf
BSS123WQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323
Case: SOT323
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.2W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
174+0.41 EUR
Mindestbestellmenge: 174
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ12CA-13-F SMAJ_ser.pdf
SMAJ12CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 2371 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
472+0.15 EUR
556+0.13 EUR
687+0.1 EUR
815+0.088 EUR
939+0.076 EUR
1102+0.065 EUR
1270+0.056 EUR
Mindestbestellmenge: 385
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B550C-13-F B5X0C-DTE.pdf
B550C-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 5A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 300pF
Max. forward voltage: 0.7V
Max. forward impulse current: 100A
Load current: 5A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMC
auf Bestellung 2897 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
122+0.59 EUR
136+0.53 EUR
Mindestbestellmenge: 97
Im Einkaufswagen  Stück im Wert von  UAH
DMG1024UV-7 DMG1024UV-DTE.pdf
DMG1024UV-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.89A; 0.53W; SOT563; ESD
Kind of package: 7 inch reel; tape
Case: SOT563
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.89A
On-state resistance: 0.45Ω
Power dissipation: 0.53W
Gate-source voltage: ±6V
Kind of channel: enhancement
Version: ESD
auf Bestellung 3043 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
205+0.35 EUR
345+0.21 EUR
428+0.17 EUR
589+0.12 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
DMC3025LSD-13 DMC3025LSD-13.pdf
DMC3025LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.5/-8.5A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.02/0.045Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
124+0.57 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
DMC4015SSD-13 DMC4015SSD-13.pdf
DMC4015SSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Kind of transistor: complementary pair
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 9.5/-12.2A
On-state resistance: 0.015/0.029Ω
Power dissipation: 1.7W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 1599 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.33 EUR
106+0.68 EUR
127+0.56 EUR
Mindestbestellmenge: 54
Im Einkaufswagen  Stück im Wert von  UAH
BAV70T-7-F BAS16T_BAW56T_BAV70T_BAV99T.pdf
BAV70T-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 1828 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
746+0.096 EUR
1071+0.067 EUR
1250+0.057 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
AL5809-100P1-7 AL5809-DTE.pdf
AL5809-100P1-7
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Output current: 0.1A
Case: PowerDI®123
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
Operating voltage: 2.5...60V DC
auf Bestellung 1663 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
196+0.37 EUR
220+0.33 EUR
229+0.31 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
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