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BCP5510TA BCP5510TA DIODES INCORPORATED BCP54_55_56.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
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AS339MTR-G1 AS339MTR-G1 DIODES INCORPORATED AS339.pdf Category: SMD comparators
Description: IC: comparator; precision; Cmp: 4; SMT; SO14; reel,tape; 200nA
Kind of output: open collector
Operating temperature: -40...85°C
Input offset current: 200nA
Input offset voltage: 7mV
Number of comparators: 4
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of package: reel; tape
Type of integrated circuit: comparator
Case: SO14
Mounting: SMT
Kind of comparator: precision
auf Bestellung 3337 Stücke:
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143+0.5 EUR
241+0.3 EUR
295+0.24 EUR
397+0.18 EUR
477+0.15 EUR
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AS331KTR-G1 AS331KTR-G1 DIODES INCORPORATED AS331.pdf Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; SMT; SOT25; reel,tape; 200nA
Kind of output: open collector
Operating temperature: -40...85°C
Input offset current: 200nA
Input offset voltage: 7mV
Number of comparators: 1
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of package: reel; tape
Type of integrated circuit: comparator
Case: SOT25
Mounting: SMT
Kind of comparator: low-power
auf Bestellung 2770 Stücke:
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295+0.24 EUR
358+0.2 EUR
407+0.18 EUR
472+0.15 EUR
575+0.12 EUR
633+0.11 EUR
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ZXTD718MCTA ZXTD718MCTA DIODES INCORPORATED ZXTD718MC.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 3.5A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 3.5A
Power dissipation: 2.45W
Case: DFN3020B-8
Pulsed collector current: 6A
Current gain: 15...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...180MHz
auf Bestellung 2673 Stücke:
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77+0.93 EUR
87+0.82 EUR
123+0.58 EUR
500+0.45 EUR
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DDZ9685-7 DIODES INCORPORATED ds30410.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Tolerance: ±5%
Kind of package: reel; tape
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DDZ9685Q-7 DIODES INCORPORATED ds30410.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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DMN3008SCP10-7 DIODES INCORPORATED DMN3008SCP10.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7W; X4-DSN3015-10
Drain-source voltage: 30V
Case: X4-DSN3015-10
Polarisation: unipolar
On-state resistance: 7.8mΩ
Power dissipation: 2.7W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 15.8nC
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DMN3009LFVQ-13 DIODES INCORPORATED DMN3009LFVQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; 2W; PowerDI3333-8
Drain-source voltage: 30V
Drain current: 70A
Case: PowerDI3333-8
Polarisation: unipolar
On-state resistance: 5.5mΩ
Power dissipation: 2W
Application: automotive industry
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 20nC
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DMN3018SFGQ-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; PowerDI3333-8
Drain-source voltage: 30V
Drain current: 8.5A
Case: PowerDI3333-8
Polarisation: unipolar
On-state resistance: 21mΩ
Application: automotive industry
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 6nC
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DMN3069L-7 DIODES INCORPORATED DMN3069L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.3W; SOT23
Drain-source voltage: 30V
Case: SOT23
Polarisation: unipolar
On-state resistance: 30mΩ
Power dissipation: 1.3W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 4.3nC
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DMN33D8LTQ-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200mA; 300mW; SOT523
Drain-source voltage: 30V
Drain current: 0.2A
Case: SOT523
Polarisation: unipolar
On-state resistance: 5Ω
Power dissipation: 0.3W
Application: automotive industry
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 0.55nC
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ZTX795A DIODES INCORPORATED ZTX795A.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 140V; 0.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 100MHz
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SMBJ30CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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74LVC244AQ20-13 DIODES INCORPORATED 74LVC244A.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 8bit; Ch: 9; IN: 9; CMOS; SMD; V-QFN4525-20; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: 8bit
Mounting: SMD
Case: V-QFN4525-20
Operating temperature: -40...150°C
Kind of package: reel; tape
Supply voltage: 1.65...3.6V DC
Number of channels: 9
Kind of output: push-pull
Number of inputs: 9
Family: LVC
Technology: CMOS
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74LVC244AT20-13 74LVC244AT20-13 DIODES INCORPORATED 74LVC244A.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 1.65...3.6V DC
Number of channels: 8
Kind of output: 3-state
Manufacturer series: LVC
Technology: CMOS
Quiescent current: 40µA
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DMG2307LQ-7 DMG2307LQ-7 DIODES INCORPORATED DMG2307LQ_Rev2.3_Feb2022.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -20A; 1.9W; SOT23
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -3.6A
Gate charge: 8.2nC
On-state resistance: 0.134Ω
Power dissipation: 1.9W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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49+1.46 EUR
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FL2400022 DIODES INCORPORATED FL.pdf Category: SMD ceramic filters and resonators
Description: Resonator: ceramic; 24MHz; SMD; 3.2x2.5mm; -25÷85°C; 10pF; 50Ω
Type of resonator: ceramic
Mounting: SMD
Operating temperature: -25...85°C
Capacitance: 10pF
Body dimensions: 3.2x2.5mm
ESR value: 50Ω
Frequency: 24MHz
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DF04M DF04M DIODES INCORPORATED DF005_10M.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
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GBU1006 GBU1006 DIODES INCORPORATED GBU10_ser.pdf description Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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33+2.2 EUR
41+1.76 EUR
47+1.53 EUR
54+1.33 EUR
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AP3015AKTR-G1 AP3015AKTR-G1 DIODES INCORPORATED AP3015x-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 1÷12VDC; Uout: 1.23÷34VDC; 0.1A; SOT25
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 1...12V DC
Output voltage: 1.23...34V DC
Output current: 0.1A
Case: SOT25
Mounting: SMD
Frequency: 150kHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 81%
auf Bestellung 1101 Stücke:
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114+0.63 EUR
158+0.45 EUR
177+0.4 EUR
203+0.35 EUR
250+0.33 EUR
500+0.32 EUR
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DMN3032LFDBQ-7 DIODES INCORPORATED DMN3032LFDBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Pulsed drain current: 25A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMN3032LFDBQ-13 DIODES INCORPORATED DMN3032LFDBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Pulsed drain current: 25A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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1N4003G-T 1N4003G-T DIODES INCORPORATED 1N4001G_ser.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Capacitance: 8pF
Reverse recovery time: 2µs
auf Bestellung 800 Stücke:
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358+0.2 EUR
544+0.13 EUR
793+0.09 EUR
800+0.089 EUR
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DMP3050LVT-7 DMP3050LVT-7 DIODES INCORPORATED DMP3050LVT.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -25A; 1.6W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -25A
Power dissipation: 1.6W
Case: TSOT26
Gate-source voltage: ±25V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP3050LVTQ-7 DIODES INCORPORATED DMP3050LVTQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.5A; Idm: -25A; 1W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.5A
Pulsed drain current: -25A
Power dissipation: 1W
Case: TSOT26
Gate-source voltage: ±25V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP3050LSS-13 DMP3050LSS-13 DIODES INCORPORATED DMP3050LSS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; Idm: -30A; 1.1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Pulsed drain current: -30A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DXTP03140BFG-7 DIODES INCORPORATED DXTP03140BFG.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 4A; 1.07W; PowerDI®3333-8
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 4A
Power dissipation: 1.07W
Case: PowerDI®3333-8
Mounting: SMD
Frequency: 120MHz
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ZXTP23140BFHTA DIODES INCORPORATED ZXTP23140BFH.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 2.5A; 1.25W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2.5A
Power dissipation: 1.25W
Case: SOT23
Pulsed collector current: 5A
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 130MHz
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BAV170T-7-F BAV170T-7-F DIODES INCORPORATED ds30258.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT523
Max. forward voltage: 1.1V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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715+0.1 EUR
747+0.096 EUR
953+0.075 EUR
1158+0.062 EUR
1270+0.056 EUR
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BAV170Q-13-F BAV170Q-13-F DIODES INCORPORATED BAV170.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Capacitance: 2pF
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.5A
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1775+0.041 EUR
1950+0.037 EUR
2225+0.032 EUR
2500+0.029 EUR
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BAV170-7-F BAV170-7-F DIODES INCORPORATED ds30234.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Max. load current: 0.5A
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BAV170Q-7-F DIODES INCORPORATED ds30234.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.5A
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KBP304G DIODES INCORPORATED KBP304G-KBP310G.pdf KBP3005G%20THRU%20KBP310G%20N1917%20REV.A.pdf kbp302g.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 3A; Ifsm: 90A; flat
Electrical mounting: THT
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 90A
Max. off-state voltage: 0.4kV
Case: KBP
Features of semiconductor devices: glass passivated
Version: flat
Leads: flat pin
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BZT52C5V6SQ-7-F BZT52C5V6SQ-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
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BZT52C5V6LP-7 DIODES INCORPORATED BZT52CxxLP_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.6V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
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BZT52C5V6TQ-7-F DIODES INCORPORATED ds30502.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
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74LVC1G07W5-7 74LVC1G07W5-7 DIODES INCORPORATED 74LVC1G07.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Manufacturer series: LVC
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642+0.11 EUR
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845+0.085 EUR
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1306+0.055 EUR
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1SMB5949B-13 1SMB5949B-13 DIODES INCORPORATED 1SMB59xxB_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 3W; 100V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 100V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
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DMHT10H032LFJ-13 DIODES INCORPORATED DMHT10H032LFJ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 6A
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 6A
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 11.9nC
Kind of channel: enhancement
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DMTH4005SPS-13 DIODES INCORPORATED DMTH4005SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 320A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 320A
Power dissipation: 150W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 49.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP4047LFDE-7 DMP4047LFDE-7 DIODES INCORPORATED DMP4047LFDE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.9A; 0.7W; U-DFN2020-6
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.9A
On-state resistance: 50mΩ
Power dissipation: 0.7W
Gate-source voltage: ±20V
auf Bestellung 3233 Stücke:
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90+0.8 EUR
124+0.58 EUR
176+0.41 EUR
204+0.35 EUR
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DMP4047SK3-13 DMP4047SK3-13 DIODES INCORPORATED DMP4047SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -18A; 1.6W; TO252
Kind of package: 13 inch reel; tape
Case: TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -18A
On-state resistance: 55mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
auf Bestellung 1651 Stücke:
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178+0.4 EUR
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DMC4047LSD-13 DMC4047LSD-13 DIODES INCORPORATED DMC4047LSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 6.3/-6.3A
On-state resistance: 0.024/0.04Ω
Power dissipation: 1.3W
Gate-source voltage: ±20V
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DMP4047LFDEQ-7 DIODES INCORPORATED DMP4047LFDEQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -36A
Drain current: -5.2A
Gate charge: 24.9nC
On-state resistance: 50mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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DMP4047LFDEQ-13 DIODES INCORPORATED DMP4047LFDEQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -36A
Drain current: -5.2A
Gate charge: 24.9nC
On-state resistance: 50mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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SMCJ28CA-13-F SMCJ28CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 2990 Stücke:
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136+0.53 EUR
161+0.44 EUR
221+0.32 EUR
300+0.27 EUR
500+0.25 EUR
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SMCJ28CAQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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DMN3150L-7 DMN3150L-7 DIODES INCORPORATED ds31126.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 1.4W; SOT23
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 54mΩ
Power dissipation: 1.4W
Drain current: 3.1A
Gate-source voltage: ±12V
Pulsed drain current: 15A
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
auf Bestellung 2845 Stücke:
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217+0.33 EUR
374+0.19 EUR
538+0.13 EUR
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ZVN3310FTA ZVN3310FTA DIODES INCORPORATED ZVN3310F.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.1A; Idm: 2A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.1A
Pulsed drain current: 2A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 680 Stücke:
Lieferzeit 14-21 Tag (e)
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125+0.58 EUR
180+0.4 EUR
300+0.34 EUR
500+0.32 EUR
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DMN10H220L-7 DMN10H220L-7 DIODES INCORPORATED DMN10H220L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN10H220LK3-13 DMN10H220LK3-13 DIODES INCORPORATED DMN10H220LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.7A; Idm: 30A; 7.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.7A
Pulsed drain current: 30A
Power dissipation: 7.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 1206 Stücke:
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100+0.72 EUR
139+0.51 EUR
242+0.3 EUR
500+0.21 EUR
1000+0.19 EUR
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BCX5210TA BCX5210TA DIODES INCORPORATED BCX51_52_53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
Produkt ist nicht verfügbar
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ZLLS410TA ZLLS410TA DIODES INCORPORATED ZLLS410.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 1.35A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 1.35A
Semiconductor structure: single diode
Max. forward voltage: 0.38V
Max. forward impulse current: 17A
Kind of package: reel; tape
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BCP5610TA BCP5610TA DIODES INCORPORATED BCP54_55_56.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 2W
Collector current: 1A
Collector-emitter voltage: 80V
Current gain: 63...160
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
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DMP2240UDM-7 DMP2240UDM-7 DIODES INCORPORATED ds31197.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; 0.6W; SOT26
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Power dissipation: 0.6W
Case: SOT26
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 5852 Stücke:
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167+0.43 EUR
253+0.28 EUR
329+0.22 EUR
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DMP2240UW-7 DMP2240UW-7 DIODES INCORPORATED ds31372.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -5A; 0.25W; SOT323
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -5A
Drain current: -1A
On-state resistance: 0.15Ω
Power dissipation: 0.25W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
auf Bestellung 437 Stücke:
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160+0.45 EUR
278+0.26 EUR
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MMBD4148-7-F MMBD4148-7-F DIODES INCORPORATED BAS16-7-DTE.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 2A
Capacitance: 2pF
Max. load current: 0.3A
auf Bestellung 739 Stücke:
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715+0.1 EUR
739+0.097 EUR
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MMBD4148TW-7-F DIODES INCORPORATED ds30154.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
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MMBD4148PLM-7 DIODES INCORPORATED MMBD4148PLM.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; U-DFN1616-6; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; fivefold
Features of semiconductor devices: small signal
Case: U-DFN1616-6
Max. forward voltage: 1.25V
Kind of package: reel; tape
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APX823-29W5G-7 APX823-29W5G-7 DIODES INCORPORATED APX823_824_825A.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT25
Mounting: SMD
Operating temperature: -40...85°C
Maximum output current: 20mA
Threshold on-voltage: 2.93V
Number of channels: 1
Supply voltage: 1.1...5.5V DC
Case: SOT25
Active logical level: low
Integrated circuit features: manual reset; watchdog
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Type of integrated circuit: supervisor circuit
Delay time: 200ms
DC supply current: 30µA
auf Bestellung 2680 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
250+0.29 EUR
281+0.25 EUR
325+0.22 EUR
388+0.18 EUR
424+0.17 EUR
500+0.16 EUR
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BCP5510TA BCP54_55_56.pdf
BCP5510TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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AS339MTR-G1 AS339.pdf
AS339MTR-G1
Hersteller: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; precision; Cmp: 4; SMT; SO14; reel,tape; 200nA
Kind of output: open collector
Operating temperature: -40...85°C
Input offset current: 200nA
Input offset voltage: 7mV
Number of comparators: 4
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of package: reel; tape
Type of integrated circuit: comparator
Case: SO14
Mounting: SMT
Kind of comparator: precision
auf Bestellung 3337 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
241+0.3 EUR
295+0.24 EUR
397+0.18 EUR
477+0.15 EUR
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AS331KTR-G1 AS331.pdf
AS331KTR-G1
Hersteller: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; SMT; SOT25; reel,tape; 200nA
Kind of output: open collector
Operating temperature: -40...85°C
Input offset current: 200nA
Input offset voltage: 7mV
Number of comparators: 1
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of package: reel; tape
Type of integrated circuit: comparator
Case: SOT25
Mounting: SMT
Kind of comparator: low-power
auf Bestellung 2770 Stücke:
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295+0.24 EUR
358+0.2 EUR
407+0.18 EUR
472+0.15 EUR
575+0.12 EUR
633+0.11 EUR
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ZXTD718MCTA ZXTD718MC.pdf
ZXTD718MCTA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 3.5A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 3.5A
Power dissipation: 2.45W
Case: DFN3020B-8
Pulsed collector current: 6A
Current gain: 15...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...180MHz
auf Bestellung 2673 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
87+0.82 EUR
123+0.58 EUR
500+0.45 EUR
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DDZ9685-7 ds30410.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Tolerance: ±5%
Kind of package: reel; tape
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DDZ9685Q-7 ds30410.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DMN3008SCP10-7 DMN3008SCP10.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7W; X4-DSN3015-10
Drain-source voltage: 30V
Case: X4-DSN3015-10
Polarisation: unipolar
On-state resistance: 7.8mΩ
Power dissipation: 2.7W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 15.8nC
Produkt ist nicht verfügbar
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DMN3009LFVQ-13 DMN3009LFVQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; 2W; PowerDI3333-8
Drain-source voltage: 30V
Drain current: 70A
Case: PowerDI3333-8
Polarisation: unipolar
On-state resistance: 5.5mΩ
Power dissipation: 2W
Application: automotive industry
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 20nC
Produkt ist nicht verfügbar
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DMN3018SFGQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; PowerDI3333-8
Drain-source voltage: 30V
Drain current: 8.5A
Case: PowerDI3333-8
Polarisation: unipolar
On-state resistance: 21mΩ
Application: automotive industry
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 6nC
Produkt ist nicht verfügbar
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DMN3069L-7 DMN3069L.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.3W; SOT23
Drain-source voltage: 30V
Case: SOT23
Polarisation: unipolar
On-state resistance: 30mΩ
Power dissipation: 1.3W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 4.3nC
Produkt ist nicht verfügbar
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DMN33D8LTQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200mA; 300mW; SOT523
Drain-source voltage: 30V
Drain current: 0.2A
Case: SOT523
Polarisation: unipolar
On-state resistance: 5Ω
Power dissipation: 0.3W
Application: automotive industry
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 0.55nC
Produkt ist nicht verfügbar
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ZTX795A ZTX795A.pdf
Hersteller: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 140V; 0.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 100MHz
Produkt ist nicht verfügbar
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SMBJ30CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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74LVC244AQ20-13 74LVC244A.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; 8bit; Ch: 9; IN: 9; CMOS; SMD; V-QFN4525-20; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: 8bit
Mounting: SMD
Case: V-QFN4525-20
Operating temperature: -40...150°C
Kind of package: reel; tape
Supply voltage: 1.65...3.6V DC
Number of channels: 9
Kind of output: push-pull
Number of inputs: 9
Family: LVC
Technology: CMOS
Produkt ist nicht verfügbar
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74LVC244AT20-13 74LVC244A.pdf
74LVC244AT20-13
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 1.65...3.6V DC
Number of channels: 8
Kind of output: 3-state
Manufacturer series: LVC
Technology: CMOS
Quiescent current: 40µA
Produkt ist nicht verfügbar
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DMG2307LQ-7 DMG2307LQ_Rev2.3_Feb2022.pdf
DMG2307LQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -20A; 1.9W; SOT23
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -3.6A
Gate charge: 8.2nC
On-state resistance: 0.134Ω
Power dissipation: 1.9W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.46 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
FL2400022 FL.pdf
Hersteller: DIODES INCORPORATED
Category: SMD ceramic filters and resonators
Description: Resonator: ceramic; 24MHz; SMD; 3.2x2.5mm; -25÷85°C; 10pF; 50Ω
Type of resonator: ceramic
Mounting: SMD
Operating temperature: -25...85°C
Capacitance: 10pF
Body dimensions: 3.2x2.5mm
ESR value: 50Ω
Frequency: 24MHz
Produkt ist nicht verfügbar
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DF04M DF005_10M.pdf
DF04M
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
Produkt ist nicht verfügbar
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GBU1006 description GBU10_ser.pdf
GBU1006
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.2 EUR
41+1.76 EUR
47+1.53 EUR
54+1.33 EUR
Mindestbestellmenge: 33
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AP3015AKTR-G1 AP3015x-DTE.pdf
AP3015AKTR-G1
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 1÷12VDC; Uout: 1.23÷34VDC; 0.1A; SOT25
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 1...12V DC
Output voltage: 1.23...34V DC
Output current: 0.1A
Case: SOT25
Mounting: SMD
Frequency: 150kHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 81%
auf Bestellung 1101 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
158+0.45 EUR
177+0.4 EUR
203+0.35 EUR
250+0.33 EUR
500+0.32 EUR
Mindestbestellmenge: 114
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DMN3032LFDBQ-7 DMN3032LFDBQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Pulsed drain current: 25A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN3032LFDBQ-13 DMN3032LFDBQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Pulsed drain current: 25A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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1N4003G-T 1N4001G_ser.pdf
1N4003G-T
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Capacitance: 8pF
Reverse recovery time: 2µs
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
544+0.13 EUR
793+0.09 EUR
800+0.089 EUR
Mindestbestellmenge: 358
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DMP3050LVT-7 DMP3050LVT.pdf
DMP3050LVT-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -25A; 1.6W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -25A
Power dissipation: 1.6W
Case: TSOT26
Gate-source voltage: ±25V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP3050LVTQ-7 DMP3050LVTQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.5A; Idm: -25A; 1W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.5A
Pulsed drain current: -25A
Power dissipation: 1W
Case: TSOT26
Gate-source voltage: ±25V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP3050LSS-13 DMP3050LSS.pdf
DMP3050LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; Idm: -30A; 1.1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Pulsed drain current: -30A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DXTP03140BFG-7 DXTP03140BFG.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 4A; 1.07W; PowerDI®3333-8
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 4A
Power dissipation: 1.07W
Case: PowerDI®3333-8
Mounting: SMD
Frequency: 120MHz
Produkt ist nicht verfügbar
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ZXTP23140BFHTA ZXTP23140BFH.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 2.5A; 1.25W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2.5A
Power dissipation: 1.25W
Case: SOT23
Pulsed collector current: 5A
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 130MHz
Produkt ist nicht verfügbar
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BAV170T-7-F ds30258.pdf
BAV170T-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT523
Max. forward voltage: 1.1V
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 2520 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
715+0.1 EUR
747+0.096 EUR
953+0.075 EUR
1158+0.062 EUR
1270+0.056 EUR
Mindestbestellmenge: 625
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BAV170Q-13-F BAV170.pdf
BAV170Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Capacitance: 2pF
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.5A
auf Bestellung 9750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1775+0.041 EUR
1950+0.037 EUR
2225+0.032 EUR
2500+0.029 EUR
Mindestbestellmenge: 1775
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BAV170-7-F ds30234.pdf
BAV170-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Max. load current: 0.5A
auf Bestellung 465 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
465+0.16 EUR
Mindestbestellmenge: 465
Im Einkaufswagen  Stück im Wert von  UAH
BAV170Q-7-F ds30234.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.5A
Produkt ist nicht verfügbar
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KBP304G KBP304G-KBP310G.pdf KBP3005G%20THRU%20KBP310G%20N1917%20REV.A.pdf kbp302g.pdf
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 3A; Ifsm: 90A; flat
Electrical mounting: THT
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 90A
Max. off-state voltage: 0.4kV
Case: KBP
Features of semiconductor devices: glass passivated
Version: flat
Leads: flat pin
Produkt ist nicht verfügbar
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BZT52C5V6SQ-7-F BZT52CxxS_ser.pdf
BZT52C5V6SQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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BZT52C5V6LP-7 BZT52CxxLP_ser.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.6V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BZT52C5V6TQ-7-F ds30502.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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74LVC1G07W5-7 74LVC1G07.pdf
74LVC1G07W5-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Manufacturer series: LVC
auf Bestellung 2032 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
642+0.11 EUR
715+0.1 EUR
845+0.085 EUR
1049+0.068 EUR
1166+0.061 EUR
1244+0.057 EUR
1306+0.055 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
1SMB5949B-13 1SMB59xxB_ser.pdf
1SMB5949B-13
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 100V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 100V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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DMHT10H032LFJ-13 DMHT10H032LFJ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 6A
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 6A
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 11.9nC
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.82 EUR
Mindestbestellmenge: 3000
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DMTH4005SPS-13 DMTH4005SPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 320A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 320A
Power dissipation: 150W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 49.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP4047LFDE-7 DMP4047LFDE.pdf
DMP4047LFDE-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.9A; 0.7W; U-DFN2020-6
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.9A
On-state resistance: 50mΩ
Power dissipation: 0.7W
Gate-source voltage: ±20V
auf Bestellung 3233 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
124+0.58 EUR
176+0.41 EUR
204+0.35 EUR
500+0.26 EUR
1000+0.24 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
DMP4047SK3-13 DMP4047SK3.pdf
DMP4047SK3-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -18A; 1.6W; TO252
Kind of package: 13 inch reel; tape
Case: TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -18A
On-state resistance: 55mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
auf Bestellung 1651 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
118+0.61 EUR
178+0.4 EUR
500+0.31 EUR
1000+0.28 EUR
Mindestbestellmenge: 72
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DMC4047LSD-13 DMC4047LSD-13.pdf
DMC4047LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 6.3/-6.3A
On-state resistance: 0.024/0.04Ω
Power dissipation: 1.3W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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DMP4047LFDEQ-7 DMP4047LFDEQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -36A
Drain current: -5.2A
Gate charge: 24.9nC
On-state resistance: 50mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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DMP4047LFDEQ-13 DMP4047LFDEQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -36A
Drain current: -5.2A
Gate charge: 24.9nC
On-state resistance: 50mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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SMCJ28CA-13-F SMCJ_ser.pdf
SMCJ28CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
161+0.44 EUR
221+0.32 EUR
300+0.27 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 136
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SMCJ28CAQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DMN3150L-7 ds31126.pdf
DMN3150L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 1.4W; SOT23
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 54mΩ
Power dissipation: 1.4W
Drain current: 3.1A
Gate-source voltage: ±12V
Pulsed drain current: 15A
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
auf Bestellung 2845 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
217+0.33 EUR
374+0.19 EUR
538+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 157
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ZVN3310FTA ZVN3310F.pdf
ZVN3310FTA
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.1A; Idm: 2A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.1A
Pulsed drain current: 2A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 680 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
87+0.83 EUR
125+0.58 EUR
180+0.4 EUR
300+0.34 EUR
500+0.32 EUR
Mindestbestellmenge: 87
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DMN10H220L-7 DMN10H220L.pdf
DMN10H220L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN10H220LK3-13 DMN10H220LK3.pdf
DMN10H220LK3-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.7A; Idm: 30A; 7.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.7A
Pulsed drain current: 30A
Power dissipation: 7.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 1206 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
139+0.51 EUR
242+0.3 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 100
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BCX5210TA BCX51_52_53.pdf
BCX5210TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
Produkt ist nicht verfügbar
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ZLLS410TA ZLLS410.pdf
ZLLS410TA
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 1.35A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 1.35A
Semiconductor structure: single diode
Max. forward voltage: 0.38V
Max. forward impulse current: 17A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BCP5610TA BCP54_55_56.pdf
BCP5610TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 2W
Collector current: 1A
Collector-emitter voltage: 80V
Current gain: 63...160
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
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DMP2240UDM-7 ds31197.pdf
DMP2240UDM-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; 0.6W; SOT26
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Power dissipation: 0.6W
Case: SOT26
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 5852 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
253+0.28 EUR
329+0.22 EUR
Mindestbestellmenge: 167
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DMP2240UW-7 ds31372.pdf
DMP2240UW-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -5A; 0.25W; SOT323
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -5A
Drain current: -1A
On-state resistance: 0.15Ω
Power dissipation: 0.25W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
auf Bestellung 437 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
160+0.45 EUR
278+0.26 EUR
Mindestbestellmenge: 114
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MMBD4148-7-F BAS16-7-DTE.pdf
MMBD4148-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 2A
Capacitance: 2pF
Max. load current: 0.3A
auf Bestellung 739 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
739+0.097 EUR
Mindestbestellmenge: 715
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MMBD4148TW-7-F ds30154.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMBD4148PLM-7 MMBD4148PLM.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; U-DFN1616-6; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; fivefold
Features of semiconductor devices: small signal
Case: U-DFN1616-6
Max. forward voltage: 1.25V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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APX823-29W5G-7 APX823_824_825A.pdf
APX823-29W5G-7
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT25
Mounting: SMD
Operating temperature: -40...85°C
Maximum output current: 20mA
Threshold on-voltage: 2.93V
Number of channels: 1
Supply voltage: 1.1...5.5V DC
Case: SOT25
Active logical level: low
Integrated circuit features: manual reset; watchdog
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Type of integrated circuit: supervisor circuit
Delay time: 200ms
DC supply current: 30µA
auf Bestellung 2680 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
250+0.29 EUR
281+0.25 EUR
325+0.22 EUR
388+0.18 EUR
424+0.17 EUR
500+0.16 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
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