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SMBJ120A-13-F SMBJ120A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷153V; 3.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 3.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ12CA-13-F SMAJ12CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
auf Bestellung 6427 Stücke:
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264+0.32 EUR
358+0.24 EUR
491+0.18 EUR
562+0.15 EUR
650+0.13 EUR
705+0.12 EUR
1000+0.11 EUR
5000+0.1 EUR
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SMAJ120CA-13-F SMAJ120CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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SMAJ120A-13-F SMAJ120A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
auf Bestellung 1048 Stücke:
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239+0.36 EUR
285+0.3 EUR
323+0.26 EUR
544+0.15 EUR
725+0.12 EUR
1000+0.11 EUR
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HD02-T HD02-T DIODES INCORPORATED HD01.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.8A; Ifsm: 30A; MiniDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.8A
Max. forward impulse current: 30A
Case: MiniDIP
Electrical mounting: SMT
Kind of package: reel; tape
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176+0.49 EUR
300+0.29 EUR
313+0.27 EUR
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ZXMN2F30FHTA ZXMN2F30FHTA DIODES INCORPORATED ZXMN2F30FH.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 0.96W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2869 Stücke:
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227+0.38 EUR
350+0.24 EUR
500+0.19 EUR
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SMCJ8.0A-13-F SMCJ8.0A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 8.89÷9.83V; 110.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 110.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2053 Stücke:
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229+0.37 EUR
283+0.3 EUR
500+0.25 EUR
1000+0.23 EUR
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74AHC04S14-13 DIODES INCORPORATED 74AHC04.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Technology: CMOS
Case: SO14
Number of channels: 6
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of inputs: 1
Supply voltage: 2...5.5V DC
Family: AHC
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74AHCU04T14-13 DIODES INCORPORATED 74AHCU04.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Technology: CMOS
Number of channels: 6
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of inputs: 1
Supply voltage: 2...5.5V DC
Family: AHC
Case: TSSOP14
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74AHCU04S14-13 DIODES INCORPORATED 74AHCU04.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Technology: CMOS
Number of channels: 6
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of inputs: 1
Supply voltage: 2...5.5V DC
Family: AHC
Case: SO14
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74AHCT04S14-13 74AHCT04S14-13 DIODES INCORPORATED 74AHCT04.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC
Type of integrated circuit: digital
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: push-pull
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of integrated circuit: inverter
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74AHCT04T14-13 74AHCT04T14-13 DIODES INCORPORATED 74AHCT04.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; -40÷150°C
Type of integrated circuit: digital
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: push-pull
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of integrated circuit: inverter
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BZX84C8V2-13-F BZX84C8V2-13-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.2V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 2320 Stücke:
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1640+0.052 EUR
2320+0.037 EUR
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BZX84C8V2Q-13-F BZX84C8V2Q-13-F DIODES INCORPORATED ds18001.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.2V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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BZX84C8V2Q-7-F BZX84C8V2Q-7-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.2V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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BZX84C8V2W-7-F BZX84C8V2W-7-F DIODES INCORPORATED BZX84CxxW_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 8.2V; SMD; SOT323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Case: SOT323
Kind of package: reel; tape
Semiconductor structure: single diode
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BZT52C4V3-7-F BZT52C4V3-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 4.3V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 792 Stücke:
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556+0.15 EUR
792+0.11 EUR
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AP431SHARTR-G1 AP431SHARTR-G1 DIODES INCORPORATED AP431S.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT89; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT89
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 380 Stücke:
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278+0.31 EUR
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AP431IBRTR-G1 AP431IBRTR-G1 DIODES INCORPORATED AP431i.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT89
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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AP431SARTR-G1 AP431SARTR-G1 DIODES INCORPORATED AP431S.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT89
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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AP431SBRTR-G1 AP431SBRTR-G1 DIODES INCORPORATED AP431S.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT89
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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AP431SHBRTR-G1 AP431SHBRTR-G1 DIODES INCORPORATED AP431S.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT89
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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MMSZ5252B-7-F MMSZ5252B-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 24V; SMD; SOD123; reel,tape; single diode
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Tolerance: ±5%
Zener voltage: 24V
auf Bestellung 280 Stücke:
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280+0.31 EUR
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MMSZ5252BS-7-F MMSZ5252BS-7-F DIODES INCORPORATED mmsz52xxbs_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 24V; SMD; SOD323; reel,tape; single diode
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±5%
Zener voltage: 24V
auf Bestellung 1660 Stücke:
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770+0.11 EUR
1386+0.062 EUR
1660+0.051 EUR
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DMT4002LPS-13 DIODES INCORPORATED DMT4002LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W
Case: PowerDI5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 116.1nC
On-state resistance: 3.1mΩ
Power dissipation: 2.3W
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 40V
Pulsed drain current: 200A
Kind of package: 13 inch reel; tape
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DMT4003SCT DMT4003SCT DIODES INCORPORATED DMT4003SCT.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 350A; 156W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 75.6nC
On-state resistance: 2.4mΩ
Power dissipation: 156W
Gate-source voltage: ±20V
Drain current: 164A
Drain-source voltage: 40V
Pulsed drain current: 350A
Kind of package: tube
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DMT4004LPS-13 DIODES INCORPORATED DMT4004LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Case: PowerDI5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 82.2nC
On-state resistance: 4mΩ
Power dissipation: 2.6W
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 40V
Pulsed drain current: 100A
Kind of package: 13 inch reel; tape
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DMT4005SCT DMT4005SCT DIODES INCORPORATED DMT4005SCT.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 160A; 104W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49.1nC
On-state resistance: 3.8mΩ
Power dissipation: 104W
Gate-source voltage: ±20V
Drain current: 85A
Drain-source voltage: 40V
Pulsed drain current: 160A
Kind of package: tube
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SDT15H100P5-7 DIODES INCORPORATED SDT15H100P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 15A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 35mA
Max. forward voltage: 0.66V
Load current: 15A
Max. off-state voltage: 0.1kV
Max. forward impulse current: 350A
Kind of package: reel; tape
Case: PowerDI®5
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SDT15H100P5-13 DIODES INCORPORATED SDT15H100P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 15A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 35mA
Max. forward voltage: 0.66V
Load current: 15A
Max. off-state voltage: 0.1kV
Max. forward impulse current: 350A
Kind of package: reel; tape
Case: PowerDI®5
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SDT15H50P5-7 DIODES INCORPORATED SDT15H50P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 50V; 15A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 105mA
Max. forward voltage: 0.47V
Load current: 15A
Max. off-state voltage: 50V
Max. forward impulse current: 290A
Kind of package: reel; tape
Case: PowerDI®5
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ZVP3306A ZVP3306A DIODES INCORPORATED ZVP3306A.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.16A; 0.625W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.16A
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
auf Bestellung 3190 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.58 EUR
92+0.93 EUR
123+0.69 EUR
138+0.62 EUR
200+0.56 EUR
500+0.49 EUR
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SMBJ64A-13-F SMBJ64A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2788 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.27 EUR
455+0.19 EUR
556+0.15 EUR
695+0.12 EUR
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BAV70WQ-7-F BAV70WQ-7-F DIODES INCORPORATED BAV70W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAV19W-7-F BAV19W-7-F DIODES INCORPORATED BAV19W-BAV21W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.4A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 1346 Stücke:
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500+0.17 EUR
596+0.14 EUR
885+0.096 EUR
1296+0.065 EUR
1346+0.063 EUR
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BAV19WS-7-F BAV19WS-7-F DIODES INCORPORATED BAV19WS-BAV21WS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.25A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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410+0.2 EUR
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BZX84C33-7-F BZX84C33-7-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
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BZX84C33Q-7-F DIODES INCORPORATED ds18001.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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BZX84C33-13-F BZX84C33-13-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
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BZX84C33T-7-F BZX84C33T-7-F DIODES INCORPORATED BZX84CxxT_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 33V; SMD; SOT523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Case: SOT523
Kind of package: reel; tape
Semiconductor structure: single diode
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BZX84C33Q-13-F DIODES INCORPORATED ds18001.pdf Category: SMD Zener diodes
Description: Diode: Zener; 350mW; 33V; SMD; SOT23
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6.1%
Case: SOT23
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MJD340-13 MJD340-13 DIODES INCORPORATED ds31609.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 30...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 10MHz
Pulsed collector current: 0.75A
Quantity in set/package: 2500pcs.
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Lieferzeit 14-21 Tag (e)
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174+0.49 EUR
500+0.36 EUR
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DMP2078LCA3-7 DIODES INCORPORATED DMP2078LCA3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: X4-DSN1006-3
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -13A
Drain current: -2.7A
Gate charge: 1.6nC
On-state resistance: 0.6Ω
Power dissipation: 1.4W
Gate-source voltage: ±12V
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SMAJ40CA-13-F SMAJ40CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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122+0.7 EUR
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SMAJ40CAQ-13-F SMAJ40CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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BAV116WS-7 BAV116WS-7 DIODES INCORPORATED BAV116WS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
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BAV116WSQ-7 BAV116WSQ-7 DIODES INCORPORATED BAV116WSQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 1270 Stücke:
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455+0.19 EUR
625+0.13 EUR
857+0.1 EUR
964+0.088 EUR
1214+0.07 EUR
1270+0.067 EUR
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74LVC86AT14-13 74LVC86AT14-13 DIODES INCORPORATED 74LVC86A.pdf Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
auf Bestellung 2219 Stücke:
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132+0.64 EUR
222+0.38 EUR
350+0.24 EUR
414+0.2 EUR
500+0.18 EUR
1000+0.15 EUR
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BZX84C2V7Q-7-F BZX84C2V7Q-7-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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BZX84C2V7T-7-F DIODES INCORPORATED ds30262.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 2.7V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7%
Case: SOT523
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BZX84C2V7TS-7-F BZX84C2V7TS-7-F DIODES INCORPORATED BZX84CxxTS_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: triple independent
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BZX84C2V7W-7-F BZX84C2V7W-7-F DIODES INCORPORATED BZX84CxxW_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT323
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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SMCJ5.0A-13-F SMCJ5.0A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ5.0AQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ5.0A-13 DIODES INCORPORATED 3.0SMCJxx.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.07V; 326.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 326.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAZ6V8-13-F SMAZ6V8-13-F DIODES INCORPORATED SMAZx-13-F.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.8V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
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BAS70W-04-7-F BAS70W-04-7-F DIODES INCORPORATED BAS70W_-04_-05_-06.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 0.1A
auf Bestellung 1380 Stücke:
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239+0.36 EUR
285+0.3 EUR
327+0.26 EUR
604+0.14 EUR
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2N7002H-7 2N7002H-7 DIODES INCORPORATED 2N7002H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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385+0.23 EUR
439+0.19 EUR
760+0.11 EUR
1067+0.08 EUR
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3000+0.058 EUR
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2N7002A-7 2N7002A-7 DIODES INCORPORATED ds31360.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.14A; Idm: 0.8A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Version: ESD
auf Bestellung 755 Stücke:
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459+0.19 EUR
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755+0.11 EUR
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2N7002AQ-7 2N7002AQ-7 DIODES INCORPORATED 2N7002AQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.37W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
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SMBJ120A-13-F SMBJ_ser.pdf
SMBJ120A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷153V; 3.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 3.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ12CA-13-F SMAJ_ser.pdf
SMAJ12CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
auf Bestellung 6427 Stücke:
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264+0.32 EUR
358+0.24 EUR
491+0.18 EUR
562+0.15 EUR
650+0.13 EUR
705+0.12 EUR
1000+0.11 EUR
5000+0.1 EUR
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SMAJ120CA-13-F SMAJ_ser.pdf
SMAJ120CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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SMAJ120A-13-F SMAJ_ser.pdf
SMAJ120A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
auf Bestellung 1048 Stücke:
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239+0.36 EUR
285+0.3 EUR
323+0.26 EUR
544+0.15 EUR
725+0.12 EUR
1000+0.11 EUR
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HD02-T HD01.pdf
HD02-T
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.8A; Ifsm: 30A; MiniDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.8A
Max. forward impulse current: 30A
Case: MiniDIP
Electrical mounting: SMT
Kind of package: reel; tape
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129+0.67 EUR
176+0.49 EUR
300+0.29 EUR
313+0.27 EUR
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ZXMN2F30FHTA ZXMN2F30FH.pdf
ZXMN2F30FHTA
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 0.96W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2869 Stücke:
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227+0.38 EUR
350+0.24 EUR
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SMCJ8.0A-13-F SMCJ_ser.pdf
SMCJ8.0A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 8.89÷9.83V; 110.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 110.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2053 Stücke:
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148+0.58 EUR
229+0.37 EUR
283+0.3 EUR
500+0.25 EUR
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74AHC04S14-13 74AHC04.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Technology: CMOS
Case: SO14
Number of channels: 6
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of inputs: 1
Supply voltage: 2...5.5V DC
Family: AHC
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74AHCU04T14-13 74AHCU04.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Technology: CMOS
Number of channels: 6
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of inputs: 1
Supply voltage: 2...5.5V DC
Family: AHC
Case: TSSOP14
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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74AHCU04S14-13 74AHCU04.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Technology: CMOS
Number of channels: 6
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of inputs: 1
Supply voltage: 2...5.5V DC
Family: AHC
Case: SO14
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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74AHCT04S14-13 74AHCT04.pdf
74AHCT04S14-13
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC
Type of integrated circuit: digital
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: push-pull
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of integrated circuit: inverter
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AHCT04T14-13 74AHCT04.pdf
74AHCT04T14-13
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; -40÷150°C
Type of integrated circuit: digital
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: push-pull
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of integrated circuit: inverter
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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BZX84C8V2-13-F BZX84Cxx_SER.pdf
BZX84C8V2-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.2V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 2320 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1640+0.052 EUR
2320+0.037 EUR
Mindestbestellmenge: 1640 Stücke
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BZX84C8V2Q-13-F ds18001.pdf
BZX84C8V2Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.2V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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BZX84C8V2Q-7-F BZX84Cxx_SER.pdf
BZX84C8V2Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.2V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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BZX84C8V2W-7-F BZX84CxxW_SER.pdf
BZX84C8V2W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 8.2V; SMD; SOT323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Case: SOT323
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C4V3-7-F BZT52Cxx_ser.pdf
BZT52C4V3-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 4.3V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 792 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
556+0.15 EUR
792+0.11 EUR
Mindestbestellmenge: 556 Stücke
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AP431SHARTR-G1 AP431S.pdf
AP431SHARTR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT89; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT89
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 380 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
278+0.31 EUR
380+0.23 EUR
Mindestbestellmenge: 278 Stücke
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AP431IBRTR-G1 AP431i.pdf
AP431IBRTR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT89
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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AP431SARTR-G1 AP431S.pdf
AP431SARTR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT89
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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AP431SBRTR-G1 AP431S.pdf
AP431SBRTR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT89
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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AP431SHBRTR-G1 AP431S.pdf
AP431SHBRTR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT89
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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MMSZ5252B-7-F mmsz52xxb_Ser.pdf
MMSZ5252B-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 24V; SMD; SOD123; reel,tape; single diode
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Tolerance: ±5%
Zener voltage: 24V
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
280+0.31 EUR
Mindestbestellmenge: 280 Stücke
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MMSZ5252BS-7-F mmsz52xxbs_ser.pdf
MMSZ5252BS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 24V; SMD; SOD323; reel,tape; single diode
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±5%
Zener voltage: 24V
auf Bestellung 1660 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
625+0.13 EUR
770+0.11 EUR
1386+0.062 EUR
1660+0.051 EUR
Mindestbestellmenge: 625 Stücke
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DMT4002LPS-13 DMT4002LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W
Case: PowerDI5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 116.1nC
On-state resistance: 3.1mΩ
Power dissipation: 2.3W
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 40V
Pulsed drain current: 200A
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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DMT4003SCT DMT4003SCT.pdf
DMT4003SCT
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 350A; 156W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 75.6nC
On-state resistance: 2.4mΩ
Power dissipation: 156W
Gate-source voltage: ±20V
Drain current: 164A
Drain-source voltage: 40V
Pulsed drain current: 350A
Kind of package: tube
Produkt ist nicht verfügbar
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DMT4004LPS-13 DMT4004LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Case: PowerDI5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 82.2nC
On-state resistance: 4mΩ
Power dissipation: 2.6W
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 40V
Pulsed drain current: 100A
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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DMT4005SCT DMT4005SCT.pdf
DMT4005SCT
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 160A; 104W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49.1nC
On-state resistance: 3.8mΩ
Power dissipation: 104W
Gate-source voltage: ±20V
Drain current: 85A
Drain-source voltage: 40V
Pulsed drain current: 160A
Kind of package: tube
Produkt ist nicht verfügbar
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SDT15H100P5-7 SDT15H100P5.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 15A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 35mA
Max. forward voltage: 0.66V
Load current: 15A
Max. off-state voltage: 0.1kV
Max. forward impulse current: 350A
Kind of package: reel; tape
Case: PowerDI®5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDT15H100P5-13 SDT15H100P5.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 15A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 35mA
Max. forward voltage: 0.66V
Load current: 15A
Max. off-state voltage: 0.1kV
Max. forward impulse current: 350A
Kind of package: reel; tape
Case: PowerDI®5
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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SDT15H50P5-7 SDT15H50P5.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 50V; 15A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 105mA
Max. forward voltage: 0.47V
Load current: 15A
Max. off-state voltage: 50V
Max. forward impulse current: 290A
Kind of package: reel; tape
Case: PowerDI®5
Produkt ist nicht verfügbar
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ZVP3306A ZVP3306A.pdf
ZVP3306A
Hersteller: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.16A; 0.625W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.16A
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
auf Bestellung 3190 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
54+1.58 EUR
92+0.93 EUR
123+0.69 EUR
138+0.62 EUR
200+0.56 EUR
500+0.49 EUR
Mindestbestellmenge: 54 Stücke
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SMBJ64A-13-F SMBJ_ser.pdf
SMBJ64A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2788 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
313+0.27 EUR
455+0.19 EUR
556+0.15 EUR
695+0.12 EUR
Mindestbestellmenge: 313 Stücke
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BAV70WQ-7-F BAV70W.pdf
BAV70WQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BAV19W-7-F BAV19W-BAV21W.pdf
BAV19W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.4A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 1346 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
500+0.17 EUR
596+0.14 EUR
885+0.096 EUR
1296+0.065 EUR
1346+0.063 EUR
Mindestbestellmenge: 500 Stücke
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BAV19WS-7-F BAV19WS-BAV21WS.pdf
BAV19WS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.25A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
auf Bestellung 410 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
358+0.24 EUR
410+0.2 EUR
Mindestbestellmenge: 358 Stücke
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BZX84C33-7-F BZX84Cxx_SER.pdf
BZX84C33-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
284+0.31 EUR
Mindestbestellmenge: 284 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C33Q-7-F ds18001.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C33-13-F BZX84Cxx_SER.pdf
BZX84C33-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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BZX84C33T-7-F BZX84CxxT_SER.pdf
BZX84C33T-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 33V; SMD; SOT523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Case: SOT523
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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BZX84C33Q-13-F ds18001.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 350mW; 33V; SMD; SOT23
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6.1%
Case: SOT23
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10000+0.044 EUR
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MJD340-13 ds31609.pdf
MJD340-13
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 30...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 10MHz
Pulsed collector current: 0.75A
Quantity in set/package: 2500pcs.
auf Bestellung 2480 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
75+1.14 EUR
103+0.83 EUR
174+0.49 EUR
500+0.36 EUR
1000+0.32 EUR
Mindestbestellmenge: 75 Stücke
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DMP2078LCA3-7 DMP2078LCA3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: X4-DSN1006-3
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -13A
Drain current: -2.7A
Gate charge: 1.6nC
On-state resistance: 0.6Ω
Power dissipation: 1.4W
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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SMAJ40CA-13-F SMAJ_ser.pdf
SMAJ40CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
122+0.7 EUR
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SMAJ40CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ40CAQ-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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BAV116WS-7 BAV116WS.pdf
BAV116WS-7
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
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BAV116WSQ-7 BAV116WSQ.pdf
BAV116WSQ-7
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 1270 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
455+0.19 EUR
625+0.13 EUR
857+0.1 EUR
964+0.088 EUR
1214+0.07 EUR
1270+0.067 EUR
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74LVC86AT14-13 74LVC86A.pdf
74LVC86AT14-13
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
auf Bestellung 2219 Stücke:
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AnzahlPrivatkunde
132+0.64 EUR
222+0.38 EUR
350+0.24 EUR
414+0.2 EUR
500+0.18 EUR
1000+0.15 EUR
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BZX84C2V7Q-7-F BZX84Cxx_SER.pdf
BZX84C2V7Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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BZX84C2V7T-7-F ds30262.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 2.7V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7%
Case: SOT523
Kind of package: reel; tape
Semiconductor structure: single diode
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BZX84C2V7TS-7-F BZX84CxxTS_SER.pdf
BZX84C2V7TS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: triple independent
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BZX84C2V7W-7-F BZX84CxxW_SER.pdf
BZX84C2V7W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT323
Kind of package: reel; tape
Semiconductor structure: single diode
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SMCJ5.0A-13-F SMCJ_ser.pdf
SMCJ5.0A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ5.0AQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ5.0A-13 3.0SMCJxx.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.07V; 326.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 326.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAZ6V8-13-F SMAZx-13-F.pdf
SMAZ6V8-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.8V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BAS70W-04-7-F BAS70W_-04_-05_-06.pdf
BAS70W-04-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 0.1A
auf Bestellung 1380 Stücke:
Lieferzeit 14-21 Tag (e)
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239+0.36 EUR
285+0.3 EUR
327+0.26 EUR
604+0.14 EUR
861+0.099 EUR
1000+0.087 EUR
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2N7002H-7 2N7002H.pdf
2N7002H-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 8092 Stücke:
Lieferzeit 14-21 Tag (e)
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313+0.27 EUR
385+0.23 EUR
439+0.19 EUR
760+0.11 EUR
1067+0.08 EUR
1220+0.07 EUR
3000+0.058 EUR
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2N7002A-7 ds31360.pdf
2N7002A-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.14A; Idm: 0.8A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Version: ESD
auf Bestellung 755 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
334+0.25 EUR
459+0.19 EUR
684+0.12 EUR
755+0.11 EUR
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2N7002AQ-7 2N7002AQ.pdf
2N7002AQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.37W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
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