Produkte > Transistoren > MOSFET N-CH > DMG6968UDM-7

DMG6968UDM-7

ds31758.pdf
Produktcode: 190714
zu Favoriten hinzufügen Lieblingsprodukt

Hersteller:
Transistoren > MOSFET N-CH

Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Weitere Produktangebote DMG6968UDM-7 nach Preis ab 0.26 EUR bis 1.02 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
DMG6968UDM-7 DMG6968UDM-7 Diodes Incorporated ds31758.pdf Description: MOSFET 2N-CH 20V 6.5A SOT26
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 850mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.29 EUR
9000+0.27 EUR
15000+0.26 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG6968UDM-7 DMG6968UDM-7 DIODES INCORPORATED DMG6968UDM.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 0.85W; SOT26; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Power dissipation: 0.85W
Case: SOT26
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.95 EUR
108+0.8 EUR
124+0.69 EUR
190+0.44 EUR
Mindestbestellmenge: 90 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG6968UDM-7 DMG6968UDM-7 Diodes Incorporated ds31758.pdf Description: MOSFET 2N-CH 20V 6.5A SOT26
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 850mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 51661 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.99 EUR
28+0.76 EUR
100+0.51 EUR
500+0.42 EUR
1000+0.37 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG6968UDM-7 DMG6968UDM-7 Diodes Incorporated DIODS21664_1-2541970.pdf MOSFETs DUAL N-CHANNEL
auf Bestellung 6353 Stücke:
Lieferzeit 10-14 Tag (e)
4+1.02 EUR
10+0.79 EUR
100+0.52 EUR
500+0.43 EUR
1000+0.38 EUR
3000+0.3 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG6968UDM-7 ds31758.pdf
DMG6968UDM-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 6.5A SOT26
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 850mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.29 EUR
9000+0.27 EUR
15000+0.26 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG6968UDM-7 DMG6968UDM.pdf
DMG6968UDM-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 0.85W; SOT26; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Power dissipation: 0.85W
Case: SOT26
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
90+0.95 EUR
108+0.8 EUR
124+0.69 EUR
190+0.44 EUR
Mindestbestellmenge: 90 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG6968UDM-7 ds31758.pdf
DMG6968UDM-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 6.5A SOT26
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 850mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 51661 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
28+0.76 EUR
100+0.51 EUR
500+0.42 EUR
1000+0.37 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG6968UDM-7 DIODS21664_1-2541970.pdf
DMG6968UDM-7
Hersteller: Diodes Incorporated
MOSFETs DUAL N-CHANNEL
auf Bestellung 6353 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+1.02 EUR
10+0.79 EUR
100+0.52 EUR
500+0.43 EUR
1000+0.38 EUR
3000+0.3 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH