Weitere Produktangebote DMG6968UDM-7 nach Preis ab 0.37 EUR bis 1.73 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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DMG6968UDM-7 | Diodes Incorporated |
 Description: MOSFET 2N-CH 20V 6.5A SOT26Part Status: Active Supplier Device Package: SOT-26 Vgs(th) (Max) @ Id: 900mV @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6.5A Drain to Source Voltage (Vdss): 20V Power - Max: 850mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG6968UDM-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 0.85W; SOT26; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Mounting: SMD Drain current: 5.2A Kind of channel: enhancement Drain-source voltage: 20V Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Semiconductor structure: common drain Case: SOT26 On-state resistance: 24mΩ Power dissipation: 0.85W Version: ESD |
auf Bestellung 113 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG6968UDM-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 6.5A SOT26 Part Status: Active Supplier Device Package: SOT-26 Vgs(th) (Max) @ Id: 900mV @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6.5A Drain to Source Voltage (Vdss): 20V Power - Max: 850mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 5441 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG6968UDM-7 | Diodes Incorporated |
MOSFETs DUAL N-CHANNEL |
auf Bestellung 1021 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG6968UDM-7 | DIODES INC. |
Description: DIODES INC. - DMG6968UDM-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 6.5 A, 6.5 A, 0.024 ohm tariffCode: 85411000 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 20V Dauer-Drainstrom Id, n-Kanal: 6.5A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 850mW Drain-Source-Spannung Vds, n-Kanal: 20V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-26 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.024ohm productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 850mW Betriebstemperatur, max.: 150°C |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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DMG6968UDM-7 | DIODES INC. |
Description: DIODES INC. - DMG6968UDM-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 6.5 A, 6.5 A, 0.024 ohm tariffCode: 85411000 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 20V Dauer-Drainstrom Id, n-Kanal: 6.5A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 850mW Drain-Source-Spannung Vds, n-Kanal: 20V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-26 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.024ohm productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 850mW Betriebstemperatur, max.: 150°C |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 27 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMG6968UDM-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 6.5A SOT26
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 850mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 6.5A SOT26
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 850mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.37 EUR |
| DMG6968UDM-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 0.85W; SOT26; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Mounting: SMD
Drain current: 5.2A
Kind of channel: enhancement
Drain-source voltage: 20V
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Semiconductor structure: common drain
Case: SOT26
On-state resistance: 24mΩ
Power dissipation: 0.85W
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 0.85W; SOT26; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Mounting: SMD
Drain current: 5.2A
Kind of channel: enhancement
Drain-source voltage: 20V
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Semiconductor structure: common drain
Case: SOT26
On-state resistance: 24mΩ
Power dissipation: 0.85W
Version: ESD
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 90+ | 0.95 EUR |
| 108+ | 0.8 EUR |
| 113+ | 0.75 EUR |
| DMG6968UDM-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 6.5A SOT26
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 850mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 6.5A SOT26
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 850mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 5441 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.55 EUR |
| 22+ | 0.96 EUR |
| 27+ | 0.81 EUR |
| 50+ | 0.7 EUR |
| 100+ | 0.62 EUR |
| DMG6968UDM-7 |
|
Hersteller: Diodes Incorporated
MOSFETs DUAL N-CHANNEL
MOSFETs DUAL N-CHANNEL
auf Bestellung 1021 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.73 EUR |
| 10+ | 1.06 EUR |
| 100+ | 0.74 EUR |
| DMG6968UDM-7 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMG6968UDM-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 6.5 A, 6.5 A, 0.024 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 6.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 20V
Dauer-Drainstrom Id, n-Kanal: 6.5A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 850mW
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-26
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.024ohm
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 850mW
Betriebstemperatur, max.: 150°C
Description: DIODES INC. - DMG6968UDM-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 6.5 A, 6.5 A, 0.024 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 6.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 20V
Dauer-Drainstrom Id, n-Kanal: 6.5A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 850mW
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-26
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.024ohm
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 850mW
Betriebstemperatur, max.: 150°C
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
| DMG6968UDM-7 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMG6968UDM-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 6.5 A, 6.5 A, 0.024 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 6.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 20V
Dauer-Drainstrom Id, n-Kanal: 6.5A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 850mW
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-26
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.024ohm
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 850mW
Betriebstemperatur, max.: 150°C
Description: DIODES INC. - DMG6968UDM-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 6.5 A, 6.5 A, 0.024 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 6.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 20V
Dauer-Drainstrom Id, n-Kanal: 6.5A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 850mW
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-26
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.024ohm
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 850mW
Betriebstemperatur, max.: 150°C
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)