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AP431SHBRTR-G1 AP431SHBRTR-G1 DIODES INCORPORATED AP431S.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT89
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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MMSZ5252B-7-F MMSZ5252B-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 24V; SMD; SOD123; reel,tape; single diode
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Tolerance: ±5%
Zener voltage: 24V
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MMSZ5252BS-7-F MMSZ5252BS-7-F DIODES INCORPORATED mmsz52xxbs_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 24V; SMD; SOD323; reel,tape; single diode
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±5%
Zener voltage: 24V
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770+0.11 EUR
1386+0.062 EUR
1660+0.051 EUR
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DMT4002LPS-13 DIODES INCORPORATED DMT4002LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Pulsed drain current: 200A
Power dissipation: 2.3W
Gate charge: 116.1nC
Polarisation: unipolar
Drain current: 100A
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DMT4003SCT DMT4003SCT DIODES INCORPORATED DMT4003SCT.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 350A; 156W; TO220AB
Case: TO220AB
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Pulsed drain current: 350A
Power dissipation: 156W
Gate charge: 75.6nC
Polarisation: unipolar
Drain current: 164A
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DMT4004LPS-13 DIODES INCORPORATED DMT4004LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 2.6W
Gate charge: 82.2nC
Polarisation: unipolar
Drain current: 21A
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DMT4005SCT DMT4005SCT DIODES INCORPORATED DMT4005SCT.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 160A; 104W; TO220AB
Case: TO220AB
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: THT
Pulsed drain current: 160A
Power dissipation: 104W
Gate charge: 49.1nC
Polarisation: unipolar
Drain current: 85A
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SDT15H100P5-7 DIODES INCORPORATED SDT15H100P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 15A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 35mA
Max. forward voltage: 0.66V
Load current: 15A
Max. off-state voltage: 0.1kV
Max. forward impulse current: 350A
Kind of package: reel; tape
Case: PowerDI®5
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SDT15H100P5-13 DIODES INCORPORATED SDT15H100P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 15A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 35mA
Max. forward voltage: 0.66V
Load current: 15A
Max. off-state voltage: 0.1kV
Max. forward impulse current: 350A
Kind of package: reel; tape
Case: PowerDI®5
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SDT15H50P5-7 DIODES INCORPORATED SDT15H50P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 50V; 15A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 105mA
Max. forward voltage: 0.47V
Load current: 15A
Max. off-state voltage: 50V
Max. forward impulse current: 290A
Kind of package: reel; tape
Case: PowerDI®5
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ZVP3306A ZVP3306A DIODES INCORPORATED ZVP3306A.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.16A; 0.625W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -160mA
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
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138+0.62 EUR
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SMBJ64A-13-F SMBJ64A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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455+0.19 EUR
556+0.15 EUR
695+0.12 EUR
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BAV70WQ-7-F BAV70WQ-7-F DIODES INCORPORATED BAV70W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAV19W-7-F BAV19W-7-F DIODES INCORPORATED BAV19W-BAV21W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.4A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
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BAV19WS-7-F BAV19WS-7-F DIODES INCORPORATED BAV19WS-BAV21WS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.25A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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BZX84C33-7-F BZX84C33-7-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
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BZX84C33Q-7-F DIODES INCORPORATED ds18001.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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BZX84C33-13-F BZX84C33-13-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
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BZX84C33T-7-F BZX84C33T-7-F DIODES INCORPORATED BZX84CxxT_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 33V; SMD; SOT523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Case: SOT523
Kind of package: reel; tape
Semiconductor structure: single diode
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BZX84C33Q-13-F DIODES INCORPORATED ds18001.pdf Category: SMD Zener diodes
Description: Diode: Zener; 350mW; 33V; SMD; SOT23
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6.1%
Case: SOT23
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MJD340-13 MJD340-13 DIODES INCORPORATED ds31609.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 30...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 10MHz
Pulsed collector current: 0.75A
Quantity in set/package: 2500pcs.
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DMP2078LCA3-7 DIODES INCORPORATED DMP2078LCA3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: X4-DSN1006-3
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -13A
Drain current: -2.7A
Gate charge: 1.6nC
On-state resistance: 0.6Ω
Power dissipation: 1.4W
Gate-source voltage: ±12V
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SMAJ40CA-13-F SMAJ40CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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250+0.35 EUR
379+0.23 EUR
432+0.2 EUR
556+0.15 EUR
589+0.14 EUR
2000+0.13 EUR
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SMAJ40CAQ-13-F SMAJ40CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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BAV116WS-7 BAV116WS-7 DIODES INCORPORATED BAV116WS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
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BAV116WSQ-7 BAV116WSQ-7 DIODES INCORPORATED BAV116WSQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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455+0.19 EUR
625+0.13 EUR
857+0.1 EUR
964+0.088 EUR
1214+0.07 EUR
1270+0.067 EUR
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74LVC86AT14-13 74LVC86AT14-13 DIODES INCORPORATED 74LVC86A.pdf Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
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132+0.64 EUR
222+0.38 EUR
350+0.24 EUR
414+0.2 EUR
500+0.18 EUR
1000+0.15 EUR
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BZX84C2V7Q-7-F BZX84C2V7Q-7-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.7V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZX84C2V7T-7-F DIODES INCORPORATED ds30262.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 2.7V; SMD; SOT523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7%
Case: SOT523
Semiconductor structure: single diode
Kind of package: reel; tape
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BZX84C2V7TS-7-F BZX84C2V7TS-7-F DIODES INCORPORATED BZX84CxxTS_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
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BZX84C2V7W-7-F BZX84C2V7W-7-F DIODES INCORPORATED BZX84CxxW_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
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SMCJ5.0A-13-F SMCJ5.0A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ5.0AQ-13-F SMCJ5.0AQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ5.0A-13 3.0SMCJ5.0A-13 DIODES INCORPORATED 3.0SMCJxx.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.07V; 326.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 326.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMAZ6V8-13-F SMAZ6V8-13-F DIODES INCORPORATED SMAZx-13-F.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.8V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
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BAS70W-04-7-F BAS70W-04-7-F DIODES INCORPORATED BAS70W_-04_-05_-06.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
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2N7002H-7 2N7002H-7 DIODES INCORPORATED 2N7002H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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2N7002A-7 2N7002A-7 DIODES INCORPORATED ds31360.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.14A; Idm: 0.8A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Version: ESD
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2N7002AQ-7 2N7002AQ-7 DIODES INCORPORATED 2N7002AQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.37W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
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2N7002H-13 2N7002H-13 DIODES INCORPORATED 2N7002H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; 510mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.51W
Case: SOT23
On-state resistance: 7.5Ω
Mounting: SMD
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KBP408G DIODES INCORPORATED KBP4005G%20THRU%20KBP410G%20N1918%20REV.A.pdf KBP404G-KBP410G.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 130A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 130A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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D1213A-01T-7 D1213A-01T-7 DIODES INCORPORATED D1213A-01T.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOD523; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Capacitance: 1.2pF
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FZT600TA FZT600TA DIODES INCORPORATED FZT600A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Manufacturer standard package: 1000pcs.
auf Bestellung 590 Stücke:
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87+0.99 EUR
137+0.62 EUR
159+0.54 EUR
250+0.46 EUR
500+0.44 EUR
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DMT32M5LFG-7 DIODES INCORPORATED DMT32M5LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 67.7nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 7 inch reel; tape
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DMT32M5LPS-13 DIODES INCORPORATED DMT32M5LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
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DMT32M5LPSW-13 DIODES INCORPORATED DMT32M5LPSW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2W; PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Power dissipation: 3.2W
Case: PowerDI5060-8
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 34nC
Produkt ist nicht verfügbar
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DMT69M5LCG-7 DIODES INCORPORATED DMT69M5LCG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.7A
Power dissipation: 2.64W
Case: V-DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 208A
Kind of package: 7 inch reel; tape
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DMT69M5LFVWQ-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Power dissipation: 2.74W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 160A
Kind of package: 13 inch reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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DMT69M5LH3 DIODES INCORPORATED DMT69M5LH3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 300A; 3.3W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 3.3W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 300A
Kind of package: tube
Produkt ist nicht verfügbar
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DMTH45M5LPSWQ-13 DIODES INCORPORATED DMTH45M5LPSWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 86A; Idm: 344A; 72W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 86A
Power dissipation: 72W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of channel: enhancement
Pulsed drain current: 344A
Kind of package: 13 inch reel; tape
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DMT10H4M5LPS-13 DIODES INCORPORATED DMT10H4M5LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 2.3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
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DMTH32M5LPSQ-13 DIODES INCORPORATED DMTH32M5LPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±16V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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DMTH45M5LPDWQ-13 DIODES INCORPORATED DMTH45M5LPDWQ.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of channel: enhancement
Pulsed drain current: 316A
Kind of package: 13 inch reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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DMTH63M5LFGQ-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90.3A; 3.4W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90.3A
Power dissipation: 3.4W
Case: PowerDI3333-8
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 41.2nC
Application: automotive industry
Produkt ist nicht verfügbar
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DMTH10H4M5LPS-13 DIODES INCORPORATED DMTH10H4M5LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14A
Power dissipation: 2.7W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
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MMBT6427-7-F MMBT6427-7-F DIODES INCORPORATED MMBT6427-7-F.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
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1060+0.08 EUR
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DMG7408SFG-7 DIODES INCORPORATED DMG7408SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W
Mounting: SMD
Pulsed drain current: 66A
Power dissipation: 2.1W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 7.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 33mΩ
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AZ1117D-ADJTRE1 AZ1117D-ADJTRE1 DIODES INCORPORATED AZ1117_Rev5.3_Jan2019_DS.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.25V
Output voltage: 1.25...15V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AZ1117IH-ADJTRG1 AZ1117IH-ADJTRG1 DIODES INCORPORATED AZ1117I.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.25...15V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117I
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
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AZ1117ID-ADJTRG1 AZ1117ID-ADJTRG1 DIODES INCORPORATED AZ1117I.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.25...15V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117I
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
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AP431SHBRTR-G1 AP431S.pdf
AP431SHBRTR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT89
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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MMSZ5252B-7-F mmsz52xxb_Ser.pdf
MMSZ5252B-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 24V; SMD; SOD123; reel,tape; single diode
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Tolerance: ±5%
Zener voltage: 24V
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280+0.31 EUR
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MMSZ5252BS-7-F mmsz52xxbs_ser.pdf
MMSZ5252BS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 24V; SMD; SOD323; reel,tape; single diode
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±5%
Zener voltage: 24V
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770+0.11 EUR
1386+0.062 EUR
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DMT4002LPS-13 DMT4002LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Pulsed drain current: 200A
Power dissipation: 2.3W
Gate charge: 116.1nC
Polarisation: unipolar
Drain current: 100A
Produkt ist nicht verfügbar
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DMT4003SCT DMT4003SCT.pdf
DMT4003SCT
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 350A; 156W; TO220AB
Case: TO220AB
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Pulsed drain current: 350A
Power dissipation: 156W
Gate charge: 75.6nC
Polarisation: unipolar
Drain current: 164A
Produkt ist nicht verfügbar
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DMT4004LPS-13 DMT4004LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 2.6W
Gate charge: 82.2nC
Polarisation: unipolar
Drain current: 21A
Produkt ist nicht verfügbar
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DMT4005SCT DMT4005SCT.pdf
DMT4005SCT
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 160A; 104W; TO220AB
Case: TO220AB
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: THT
Pulsed drain current: 160A
Power dissipation: 104W
Gate charge: 49.1nC
Polarisation: unipolar
Drain current: 85A
Produkt ist nicht verfügbar
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SDT15H100P5-7 SDT15H100P5.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 15A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 35mA
Max. forward voltage: 0.66V
Load current: 15A
Max. off-state voltage: 0.1kV
Max. forward impulse current: 350A
Kind of package: reel; tape
Case: PowerDI®5
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SDT15H100P5-13 SDT15H100P5.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 15A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 35mA
Max. forward voltage: 0.66V
Load current: 15A
Max. off-state voltage: 0.1kV
Max. forward impulse current: 350A
Kind of package: reel; tape
Case: PowerDI®5
Produkt ist nicht verfügbar
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SDT15H50P5-7 SDT15H50P5.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 50V; 15A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 105mA
Max. forward voltage: 0.47V
Load current: 15A
Max. off-state voltage: 50V
Max. forward impulse current: 290A
Kind of package: reel; tape
Case: PowerDI®5
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ZVP3306A ZVP3306A.pdf
ZVP3306A
Hersteller: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.16A; 0.625W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -160mA
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
auf Bestellung 1146 Stücke:
Lieferzeit 14-21 Tag (e)
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54+1.58 EUR
92+0.93 EUR
123+0.69 EUR
138+0.62 EUR
200+0.56 EUR
500+0.49 EUR
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SMBJ64A-13-F SMBJ_ser.pdf
SMBJ64A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2788 Stücke:
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313+0.27 EUR
455+0.19 EUR
556+0.15 EUR
695+0.12 EUR
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BAV70WQ-7-F BAV70W.pdf
BAV70WQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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BAV19W-7-F BAV19W-BAV21W.pdf
BAV19W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.4A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
auf Bestellung 596 Stücke:
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AnzahlPrivatkunde
500+0.17 EUR
589+0.14 EUR
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BAV19WS-7-F BAV19WS-BAV21WS.pdf
BAV19WS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.25A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 400 Stücke:
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358+0.24 EUR
400+0.2 EUR
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BZX84C33-7-F BZX84Cxx_SER.pdf
BZX84C33-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
284+0.31 EUR
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BZX84C33Q-7-F ds18001.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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BZX84C33-13-F BZX84Cxx_SER.pdf
BZX84C33-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BZX84C33T-7-F BZX84CxxT_SER.pdf
BZX84C33T-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 33V; SMD; SOT523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Case: SOT523
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BZX84C33Q-13-F ds18001.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 350mW; 33V; SMD; SOT23
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6.1%
Case: SOT23
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10000+0.044 EUR
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MJD340-13 ds31609.pdf
MJD340-13
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 30...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 10MHz
Pulsed collector current: 0.75A
Quantity in set/package: 2500pcs.
auf Bestellung 2480 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
75+1.14 EUR
103+0.83 EUR
174+0.49 EUR
500+0.36 EUR
1000+0.32 EUR
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DMP2078LCA3-7 DMP2078LCA3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: X4-DSN1006-3
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -13A
Drain current: -2.7A
Gate charge: 1.6nC
On-state resistance: 0.6Ω
Power dissipation: 1.4W
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
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SMAJ40CA-13-F SMAJ_ser.pdf
SMAJ40CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 4210 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
250+0.35 EUR
379+0.23 EUR
432+0.2 EUR
556+0.15 EUR
589+0.14 EUR
2000+0.13 EUR
Mindestbestellmenge: 250 Stücke
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SMAJ40CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ40CAQ-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAV116WS-7 BAV116WS.pdf
BAV116WS-7
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAV116WSQ-7 BAV116WSQ.pdf
BAV116WSQ-7
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 1270 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
455+0.19 EUR
625+0.13 EUR
857+0.1 EUR
964+0.088 EUR
1214+0.07 EUR
1270+0.067 EUR
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74LVC86AT14-13 74LVC86A.pdf
74LVC86AT14-13
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
auf Bestellung 2219 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
132+0.64 EUR
222+0.38 EUR
350+0.24 EUR
414+0.2 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 132 Stücke
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BZX84C2V7Q-7-F BZX84Cxx_SER.pdf
BZX84C2V7Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.7V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BZX84C2V7T-7-F ds30262.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 2.7V; SMD; SOT523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7%
Case: SOT523
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZX84C2V7TS-7-F BZX84CxxTS_SER.pdf
BZX84C2V7TS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZX84C2V7W-7-F BZX84CxxW_SER.pdf
BZX84C2V7W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMCJ5.0A-13-F SMCJ_ser.pdf
SMCJ5.0A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMCJ5.0AQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
SMCJ5.0AQ-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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3.0SMCJ5.0A-13 3.0SMCJxx.pdf
3.0SMCJ5.0A-13
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.07V; 326.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 326.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SMAZ6V8-13-F SMAZx-13-F.pdf
SMAZ6V8-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.8V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAS70W-04-7-F BAS70W_-04_-05_-06.pdf
BAS70W-04-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
239+0.36 EUR
285+0.3 EUR
327+0.26 EUR
604+0.14 EUR
861+0.099 EUR
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2N7002H-7 2N7002H.pdf
2N7002H-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 8092 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
264+0.32 EUR
329+0.26 EUR
385+0.23 EUR
577+0.14 EUR
685+0.12 EUR
987+0.087 EUR
1132+0.075 EUR
3000+0.062 EUR
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2N7002A-7 ds31360.pdf
2N7002A-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.14A; Idm: 0.8A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Version: ESD
auf Bestellung 605 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
295+0.29 EUR
447+0.19 EUR
575+0.14 EUR
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2N7002AQ-7 2N7002AQ.pdf
2N7002AQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.37W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
Produkt ist nicht verfügbar
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2N7002H-13 2N7002H.pdf
2N7002H-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; 510mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.51W
Case: SOT23
On-state resistance: 7.5Ω
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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KBP408G KBP4005G%20THRU%20KBP410G%20N1918%20REV.A.pdf KBP404G-KBP410G.pdf
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 130A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 130A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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D1213A-01T-7 D1213A-01T.pdf
D1213A-01T-7
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOD523; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Capacitance: 1.2pF
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FZT600TA FZT600A.pdf
FZT600TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Manufacturer standard package: 1000pcs.
auf Bestellung 590 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
55+1.57 EUR
87+0.99 EUR
137+0.62 EUR
159+0.54 EUR
250+0.46 EUR
500+0.44 EUR
Mindestbestellmenge: 55 Stücke
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DMT32M5LFG-7 DMT32M5LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 67.7nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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DMT32M5LPS-13 DMT32M5LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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DMT32M5LPSW-13 DMT32M5LPSW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2W; PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Power dissipation: 3.2W
Case: PowerDI5060-8
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 34nC
Produkt ist nicht verfügbar
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DMT69M5LCG-7 DMT69M5LCG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.7A
Power dissipation: 2.64W
Case: V-DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 208A
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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DMT69M5LFVWQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Power dissipation: 2.74W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 160A
Kind of package: 13 inch reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DMT69M5LH3 DMT69M5LH3.pdf
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 300A; 3.3W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 3.3W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 300A
Kind of package: tube
Produkt ist nicht verfügbar
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DMTH45M5LPSWQ-13 DMTH45M5LPSWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 86A; Idm: 344A; 72W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 86A
Power dissipation: 72W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of channel: enhancement
Pulsed drain current: 344A
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
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DMT10H4M5LPS-13 DMT10H4M5LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 2.3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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DMTH32M5LPSQ-13 DMTH32M5LPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±16V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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DMTH45M5LPDWQ-13 DMTH45M5LPDWQ.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of channel: enhancement
Pulsed drain current: 316A
Kind of package: 13 inch reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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DMTH63M5LFGQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90.3A; 3.4W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90.3A
Power dissipation: 3.4W
Case: PowerDI3333-8
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 41.2nC
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DMTH10H4M5LPS-13 DMTH10H4M5LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14A
Power dissipation: 2.7W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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MMBT6427-7-F MMBT6427-7-F.pdf
MMBT6427-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
auf Bestellung 1259 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
417+0.2 EUR
550+0.15 EUR
857+0.1 EUR
1060+0.08 EUR
1259+0.068 EUR
Mindestbestellmenge: 417 Stücke
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DMG7408SFG-7 DMG7408SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W
Mounting: SMD
Pulsed drain current: 66A
Power dissipation: 2.1W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 7.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 33mΩ
Produkt ist nicht verfügbar
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AZ1117D-ADJTRE1 AZ1117_Rev5.3_Jan2019_DS.pdf
AZ1117D-ADJTRE1
Hersteller: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.25V
Output voltage: 1.25...15V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AZ1117IH-ADJTRG1 AZ1117I.pdf
AZ1117IH-ADJTRG1
Hersteller: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.25...15V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117I
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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AZ1117ID-ADJTRG1 AZ1117I.pdf
AZ1117ID-ADJTRG1
Hersteller: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.25...15V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117I
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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