BAS16HLPQ-7B Diodes Incorporated
Hersteller: Diodes Incorporated
Description: DIODE STD 100V 215MA X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 33+ | 0.65 EUR |
| 54+ | 0.39 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.15 EUR |
| 2000+ | 0.14 EUR |
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Technische Details BAS16HLPQ-7B Diodes Incorporated
Description: DIODES INC. - BAS16HLPQ-7B - Kleinsignaldiode, Einfach, 100 V, 215 mA, 1.25 V, 4 ns, 4 A, tariffCode: 85411000, Bauform - Diode: X1-DFN1006, Durchlassstoßstrom: 4A, rohsCompliant: YES, Diodenmontage: Oberflächenmontage, hazardous: false, rohsPhthalatesCompliant: YES, Diodenkonfiguration: Einfach, Qualifikation: AEC-Q101, isCanonical: N, Durchlassspannung, max.: 1.25V, Sperrverzögerungszeit: 4ns, usEccn: EAR99, Durchschnittlicher Durchlassstrom: 215mA, euEccn: NLR, Anzahl der Pins: 2Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Periodische Spitzensperrspannung: 100V, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote BAS16HLPQ-7B
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BAS16HLPQ-7B | Diodes Incorporated |
Description: DIODE STD 100V 215MA X1DFN10062 Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V Qualification: AEC-Q101 |
auf Bestellung 4900 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 4900 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BAS16HLPQ-7B |
|
Hersteller: Diodes Incorporated
Description: DIODE STD 100V 215MA X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
Description: DIODE STD 100V 215MA X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)