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DMN3027LFG-13 DIODES INCORPORATED DMN3027LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; Idm: 70A; 3W
Polarisation: unipolar
Pulsed drain current: 70A
Drain current: 7.7A
Drain-source voltage: 30V
Gate-source voltage: ±25V
Gate charge: 11.3nC
On-state resistance: 26.5mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 3W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Mounting: SMD
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DMN4008LFG-13 DIODES INCORPORATED DMN4008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Polarisation: unipolar
Pulsed drain current: 90A
Drain current: 15.4A
Drain-source voltage: 40V
Gate-source voltage: ±20V
Gate charge: 74nC
On-state resistance: 20mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.3W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Mounting: SMD
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DMN4010LFG-13 DIODES INCORPORATED DMN4010LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11.4A; Idm: 80A; 2.45W
Polarisation: unipolar
Pulsed drain current: 80A
Drain current: 11.4A
Drain-source voltage: 40V
Gate-source voltage: ±20V
Gate charge: 37nC
On-state resistance: 15mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.45W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Mounting: SMD
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DMN6069SFG-13 DIODES INCORPORATED DMN6069SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W
Polarisation: unipolar
Pulsed drain current: 25A
Drain current: 4.5A
Drain-source voltage: 60V
Gate-source voltage: ±20V
Gate charge: 25nC
On-state resistance: 63mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.4W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Mounting: SMD
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DMP2004UFG-13 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W
Polarisation: unipolar
Pulsed drain current: -180A
Drain current: -95A
Drain-source voltage: -20V
Gate-source voltage: ±12V
Gate charge: 83nC
On-state resistance: 7mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.4W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
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DMP2005UFG-13 DIODES INCORPORATED DMP2005UFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -100A; 2.2W
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -15A
Drain-source voltage: -20V
Gate-source voltage: ±10V
Gate charge: 125nC
On-state resistance: 14mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.2W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
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DMP2006UFG-13 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -14A
Drain-source voltage: -20V
Gate-source voltage: ±10V
Gate charge: 200nC
On-state resistance: 17mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.3W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI®3333-8
Mounting: SMD
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DMP2007UFG-13 DIODES INCORPORATED DMP2007UFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -14.5A
Drain-source voltage: -20V
Gate-source voltage: ±12V
Gate charge: 85nC
On-state resistance: 9mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.3W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
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DMP2008UFG-13 DIODES INCORPORATED DMP2008UFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -11A
Drain-source voltage: -20V
Gate-source voltage: ±8V
Gate charge: 72nC
On-state resistance: 17mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.4W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
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DMP2010UFG-13 DIODES INCORPORATED DMP2010UFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12.7A; Idm: -80A; 2.3W
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -12.7A
Drain-source voltage: -20V
Gate-source voltage: ±10V
Gate charge: 103nC
On-state resistance: 12.5mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.3W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
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DMP3007SFG-13 DIODES INCORPORATED DMP3007SFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -55A; Idm: -120A; 2.8W
Polarisation: unipolar
Pulsed drain current: -120A
Drain current: -55A
Drain-source voltage: -30V
Gate-source voltage: ±25V
Gate charge: 64.2nC
On-state resistance: 13mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.8W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
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DMP3008SFG-13 DIODES INCORPORATED DMP3008SFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.3A; Idm: -80A; 2.2W
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -9.3A
Drain-source voltage: -30V
Gate-source voltage: ±20V
Gate charge: 47nC
On-state resistance: 25mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.2W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
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DMP3036SFG-13 DIODES INCORPORATED DMP3036SFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -80A; 2.3W
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -25A
Drain-source voltage: -30V
Gate-source voltage: ±25V
Gate charge: 16.5nC
On-state resistance: 29mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.3W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
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DMP4013LFG-13 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -11A
Drain-source voltage: -40V
Gate-source voltage: ±20V
Gate charge: 68.6nC
On-state resistance: 18mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.1W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
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DMP4025SFG-13 DIODES INCORPORATED DMP4025SFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.77A; Idm: -80A; 1.95W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.77A
Pulsed drain current: -80A
Power dissipation: 1.95W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 33.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMS3014SFG-13 DIODES INCORPORATED DMS3014SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Polarisation: unipolar
Pulsed drain current: 6A
Drain current: 2A
Drain-source voltage: 60V
On-state resistance: 0.25Ω
Kind of package: 13 inch reel; tape
Power dissipation: 1.69W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT223
Mounting: SMD
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DMT32M5LFG-13 DIODES INCORPORATED DMT32M5LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 67.7nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
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DMT8008LFG-13 DIODES INCORPORATED DMT8008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 192A; 2.5W
Polarisation: unipolar
Pulsed drain current: 192A
Drain current: 13A
Drain-source voltage: 80V
Gate-source voltage: ±20V
Gate charge: 37.7nC
On-state resistance: 10.4mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.5W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Mounting: SMD
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DMT8012LFG-13 DIODES INCORPORATED DMT8012LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 80A; 2.2W
Polarisation: unipolar
Pulsed drain current: 80A
Drain current: 7.6A
Drain-source voltage: 80V
Gate-source voltage: ±20V
Gate charge: 34nC
On-state resistance: 22mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.2W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Mounting: SMD
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MJD31C-13 DIODES INCORPORATED ds31625.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Pulsed collector current: 5A
Quantity in set/package: 2500pcs.
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MJD31CUQ-13 DIODES INCORPORATED MJD31CUQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 16W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 16W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Pulsed collector current: 5A
Quantity in set/package: 2500pcs.
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MJD31CQ-13 DIODES INCORPORATED MJD31CQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Pulsed collector current: 5A
Quantity in set/package: 2500pcs.
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AP64060QWU-7 AP64060QWU-7 DIODES INCORPORATED AP64060Q_AP64060TQ_AP64060ZQ.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 0.8÷26VDC; 0.6A; SMD
Application: automotive industry
Topology: buck
Type of integrated circuit: PMIC
Mounting: SMD
Kind of package: reel; tape
Case: TSOT26
Operating temperature: -40...125°C
Output current: 0.6A
Output voltage: 0.8...26V DC
Input voltage: 4.5...40V DC
Frequency: 2.2MHz
Kind of integrated circuit: DC/DC converter
auf Bestellung 490 Stücke:
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125+0.57 EUR
178+0.4 EUR
187+0.38 EUR
Mindestbestellmenge: 125
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SMAJ15CA-13-F SMAJ15CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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302+0.24 EUR
350+0.2 EUR
527+0.14 EUR
618+0.12 EUR
736+0.097 EUR
820+0.087 EUR
1000+0.08 EUR
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SMAJ15CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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B260S1F-7 B260S1F-7 DIODES INCORPORATED B260S1F.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Semiconductor structure: single diode
Case: SOD123F
Mounting: SMD
Leakage current: 14mA
Kind of package: reel; tape
Capacitance: 75pF
Max. forward voltage: 0.65V
Load current: 2A
Max. forward impulse current: 50A
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200+0.36 EUR
234+0.31 EUR
266+0.27 EUR
439+0.16 EUR
603+0.12 EUR
1000+0.1 EUR
3000+0.087 EUR
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AL5819W6-7 DIODES INCORPORATED AL5819.pdf Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
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SMCJ6.0A-13-F SMCJ6.0A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.67÷7.37V; 145.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 145.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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FZT869TA DIODES INCORPORATED FZT869.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 7A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 7A
Power dissipation: 3W
Case: SOT223
Pulsed collector current: 20A
Current gain: 40...450
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
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PAM2312AABADJ PAM2312AABADJ DIODES INCORPORATED PAM2312.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; 1A; TSOT25; SMD; 1.5MHz
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Efficiency: 96%
Kind of package: reel; tape
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218+0.33 EUR
272+0.26 EUR
304+0.24 EUR
353+0.2 EUR
388+0.18 EUR
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PAM2305AABADJ PAM2305AABADJ DIODES INCORPORATED PAM2305.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; 1A; TSOT25; SMD; 1.5MHz
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Efficiency: 96%
Kind of package: reel; tape
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143+0.5 EUR
207+0.35 EUR
226+0.32 EUR
240+0.3 EUR
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AP3428DNTR-G1 AP3428DNTR-G1 DIODES INCORPORATED AP3428_A.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: U-DFN2020-6
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Efficiency: 95%
Kind of package: reel; tape
auf Bestellung 2975 Stücke:
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264+0.27 EUR
317+0.23 EUR
358+0.2 EUR
417+0.17 EUR
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AP3401DNTR-G1 AP3401DNTR-G1 DIODES INCORPORATED AP3401x-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; DFN6
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: DFN6
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
auf Bestellung 2992 Stücke:
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200+0.36 EUR
253+0.28 EUR
286+0.25 EUR
345+0.21 EUR
388+0.18 EUR
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DF1504S-T DF1504S-T DIODES INCORPORATED DF15005S-DF1510S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A
Electrical mounting: SMT
Case: DFS
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 1.5A
Max. forward impulse current: 50A
Max. off-state voltage: 0.4kV
auf Bestellung 425 Stücke:
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100+0.72 EUR
120+0.6 EUR
137+0.52 EUR
232+0.31 EUR
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DMMT5401-7-F DMMT5401-7-F DIODES INCORPORATED DMMT5401.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 300mW; SOT26
Mounting: SMD
Kind of package: reel; tape
Case: SOT26
Polarisation: bipolar
Type of transistor: PNP x2
Collector current: 0.2A
Power dissipation: 0.3W
Quantity in set/package: 3000pcs.
Current gain: 30...250
Collector-emitter voltage: 150V
Frequency: 100...300MHz
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AP2502KTR-G1 AP2502KTR-G1 DIODES INCORPORATED AP2502.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC switcher,LED driver; Uin: 2÷6VDC; TSOT23-6
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; LED driver
Input voltage: 2...6V DC
Case: TSOT23-6
Mounting: SMD
Frequency: 150kHz
Number of channels: 4
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: for LED applications
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AL5815W5-7 DIODES INCORPORATED AL5815-AL5816.pdf Category: LED drivers
Description: IC: driver; LED driver; SOT25; 15mA; Ch: 1; 4.5÷60VDC
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 4.5...60V DC
Kind of integrated circuit: LED driver
Type of integrated circuit: driver
Operating temperature: -40...105°C
Output current: 15mA
Number of channels: 1
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DGD0215WT-7 DIODES INCORPORATED DGD0215-0216.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; TSOT25; -1.8÷1.9A; Ch: 1
Case: TSOT25
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...18V
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -40...125°C
Output current: -1.8...1.9A
Pulse fall time: 25ns
Impulse rise time: 25ns
Number of channels: 1
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74AHC1G08QSE-7 DIODES INCORPORATED 74AHC1G08Q.pdf Category: Other logic integrated circuits
Description: IC: digital
Type of integrated circuit: digital
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74AHC1G08QW5-7 DIODES INCORPORATED 74AHC1G08Q.pdf Category: Other logic integrated circuits
Description: IC: digital
Type of integrated circuit: digital
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DSS5140U-7 DIODES INCORPORATED ds31690.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 500mW; SOT323
Mounting: SMD
Power dissipation: 0.5W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 40V
Current gain: 160...800
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT323
Type of transistor: PNP
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DSS5140V-7 DIODES INCORPORATED ds31658.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 600mW; SOT563
Mounting: SMD
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 40V
Current gain: 160...800
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT563
Type of transistor: PNP
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DMP2008UFG-7 DMP2008UFG-7 DIODES INCORPORATED DMP2008UFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: PowerDI®3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain-source voltage: -20V
Drain current: -11A
On-state resistance: 8mΩ
Power dissipation: 2.4W
Gate-source voltage: ±8V
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232+0.31 EUR
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DMP2004K-7 DMP2004K-7 DIODES INCORPORATED DMP2004K.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23; ESD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Case: SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -600mA
On-state resistance: 2Ω
Power dissipation: 0.55W
Gate-source voltage: ±8V
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334+0.21 EUR
484+0.15 EUR
577+0.12 EUR
847+0.085 EUR
1000+0.073 EUR
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DMHT3006LFJ-13 DIODES INCORPORATED DMHT3006LFJ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 80A; 2.1W
Mounting: SMD
Case: V-DFN5045-12
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 17nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 80A
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SBRT10U60D1Q-13 DIODES INCORPORATED SBRT10U60D1Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; Trench SBR®; SMD; 60V; 10A
Type of diode: Schottky rectifying
Case: TO252/DPAK
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Leakage current: 80µA
Max. forward impulse current: 140A
Kind of package: reel
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AS78L05MTR-G1 DIODES INCORPORATED AS78Lxx_Aug2013_DS.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; SO8; SMD; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: AS78LXX
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AS78L05MTR-E1 DIODES INCORPORATED AS78Lxx_Aug2013_DS.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; SO8; SMD; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: AS78LXX
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DESD32VS2SO-7 DESD32VS2SO-7 DIODES INCORPORATED DESD32VS2SO.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 34V; unidirectional; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 34V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 32V
Leakage current: 0.1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 42pF
Application: automotive industry
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MBR10200CT-G1 DIODES INCORPORATED MBR10200C.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 5Ax2; TO220AB; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: tube
Leakage current: 15mA
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74LV04AS14-13 DIODES INCORPORATED 74LV04A.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LV
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 2...5.5V DC
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74LV04AT14-13 DIODES INCORPORATED 74LV04A.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LV
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 2...5.5V DC
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DMNH6021SPSQ-13 DIODES INCORPORATED DMNH6021SPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 1.6W; PowerDI®5060-8
Mounting: SMD
Polarisation: unipolar
On-state resistance: 28mΩ
Power dissipation: 1.6W
Drain current: 48A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Case: PowerDI®5060-8
Type of transistor: N-MOSFET
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DMNH6021SPD-13 DIODES INCORPORATED DMNH6021SPD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 25A; 1.5W; PowerDI®5060-8
Mounting: SMD
Polarisation: unipolar
On-state resistance: 40mΩ
Power dissipation: 1.5W
Drain current: 25A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Case: PowerDI®5060-8
Type of transistor: N-MOSFET x2
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DMNH6021SPDQ-13 DIODES INCORPORATED DMNH6021SPDQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 80A; 2.8W
Mounting: SMD
Polarisation: unipolar
Gate charge: 20.1nC
On-state resistance: 40mΩ
Power dissipation: 2.8W
Drain current: 6.5A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Case: PowerDI5060-8
Type of transistor: N-MOSFET
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DMNH6021SPDW-13 DIODES INCORPORATED DMNH6021SPDW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 80A; 2.8W
Mounting: SMD
Polarisation: unipolar
Gate charge: 20.1nC
On-state resistance: 40mΩ
Power dissipation: 2.8W
Drain current: 6.5A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Case: PowerDI5060-8
Type of transistor: N-MOSFET
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DMNH10H021SPSW-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.4W; PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Gate charge: 71nC
On-state resistance: 28mΩ
Power dissipation: 4.4W
Drain-source voltage: 100V
Case: PowerDI5060-8
Type of transistor: N-MOSFET
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1N4934-T 1N4934-T DIODES INCORPORATED 1N4934_37.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
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GBJ1508-F GBJ1508-F DIODES INCORPORATED GBJ15_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 0.24kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.05V
Leads: flat pin
Case: GBJ
Kind of package: tube
Features of semiconductor devices: glass passivated
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74LVC1G08FS3-7 DIODES INCORPORATED 74LVC1G08.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN0808-4; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN0808-4
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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DMN3027LFG-13 DMN3027LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; Idm: 70A; 3W
Polarisation: unipolar
Pulsed drain current: 70A
Drain current: 7.7A
Drain-source voltage: 30V
Gate-source voltage: ±25V
Gate charge: 11.3nC
On-state resistance: 26.5mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 3W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Mounting: SMD
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DMN4008LFG-13 DMN4008LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Polarisation: unipolar
Pulsed drain current: 90A
Drain current: 15.4A
Drain-source voltage: 40V
Gate-source voltage: ±20V
Gate charge: 74nC
On-state resistance: 20mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.3W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Mounting: SMD
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DMN4010LFG-13 DMN4010LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11.4A; Idm: 80A; 2.45W
Polarisation: unipolar
Pulsed drain current: 80A
Drain current: 11.4A
Drain-source voltage: 40V
Gate-source voltage: ±20V
Gate charge: 37nC
On-state resistance: 15mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.45W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Mounting: SMD
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DMN6069SFG-13 DMN6069SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W
Polarisation: unipolar
Pulsed drain current: 25A
Drain current: 4.5A
Drain-source voltage: 60V
Gate-source voltage: ±20V
Gate charge: 25nC
On-state resistance: 63mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.4W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Mounting: SMD
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DMP2004UFG-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W
Polarisation: unipolar
Pulsed drain current: -180A
Drain current: -95A
Drain-source voltage: -20V
Gate-source voltage: ±12V
Gate charge: 83nC
On-state resistance: 7mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.4W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
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DMP2005UFG-13 DMP2005UFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -100A; 2.2W
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -15A
Drain-source voltage: -20V
Gate-source voltage: ±10V
Gate charge: 125nC
On-state resistance: 14mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.2W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
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DMP2006UFG-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -14A
Drain-source voltage: -20V
Gate-source voltage: ±10V
Gate charge: 200nC
On-state resistance: 17mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.3W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI®3333-8
Mounting: SMD
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DMP2007UFG-13 DMP2007UFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -14.5A
Drain-source voltage: -20V
Gate-source voltage: ±12V
Gate charge: 85nC
On-state resistance: 9mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.3W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
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DMP2008UFG-13 DMP2008UFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -11A
Drain-source voltage: -20V
Gate-source voltage: ±8V
Gate charge: 72nC
On-state resistance: 17mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.4W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
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DMP2010UFG-13 DMP2010UFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12.7A; Idm: -80A; 2.3W
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -12.7A
Drain-source voltage: -20V
Gate-source voltage: ±10V
Gate charge: 103nC
On-state resistance: 12.5mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.3W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Produkt ist nicht verfügbar
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DMP3007SFG-13 DMP3007SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -55A; Idm: -120A; 2.8W
Polarisation: unipolar
Pulsed drain current: -120A
Drain current: -55A
Drain-source voltage: -30V
Gate-source voltage: ±25V
Gate charge: 64.2nC
On-state resistance: 13mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.8W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
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DMP3008SFG-13 DMP3008SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.3A; Idm: -80A; 2.2W
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -9.3A
Drain-source voltage: -30V
Gate-source voltage: ±20V
Gate charge: 47nC
On-state resistance: 25mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.2W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Produkt ist nicht verfügbar
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DMP3036SFG-13 DMP3036SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -80A; 2.3W
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -25A
Drain-source voltage: -30V
Gate-source voltage: ±25V
Gate charge: 16.5nC
On-state resistance: 29mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.3W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Produkt ist nicht verfügbar
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DMP4013LFG-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -11A
Drain-source voltage: -40V
Gate-source voltage: ±20V
Gate charge: 68.6nC
On-state resistance: 18mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.1W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Produkt ist nicht verfügbar
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DMP4025SFG-13 DMP4025SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.77A; Idm: -80A; 1.95W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.77A
Pulsed drain current: -80A
Power dissipation: 1.95W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 33.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMS3014SFG-13 DMS3014SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Polarisation: unipolar
Pulsed drain current: 6A
Drain current: 2A
Drain-source voltage: 60V
On-state resistance: 0.25Ω
Kind of package: 13 inch reel; tape
Power dissipation: 1.69W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT223
Mounting: SMD
Produkt ist nicht verfügbar
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DMT32M5LFG-13 DMT32M5LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 67.7nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
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DMT8008LFG-13 DMT8008LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 192A; 2.5W
Polarisation: unipolar
Pulsed drain current: 192A
Drain current: 13A
Drain-source voltage: 80V
Gate-source voltage: ±20V
Gate charge: 37.7nC
On-state resistance: 10.4mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.5W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Produkt ist nicht verfügbar
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DMT8012LFG-13 DMT8012LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 80A; 2.2W
Polarisation: unipolar
Pulsed drain current: 80A
Drain current: 7.6A
Drain-source voltage: 80V
Gate-source voltage: ±20V
Gate charge: 34nC
On-state resistance: 22mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.2W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Produkt ist nicht verfügbar
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MJD31C-13 ds31625.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Pulsed collector current: 5A
Quantity in set/package: 2500pcs.
Produkt ist nicht verfügbar
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MJD31CUQ-13 MJD31CUQ.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 16W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 16W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Pulsed collector current: 5A
Quantity in set/package: 2500pcs.
Produkt ist nicht verfügbar
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MJD31CQ-13 MJD31CQ.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Pulsed collector current: 5A
Quantity in set/package: 2500pcs.
Produkt ist nicht verfügbar
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AP64060QWU-7 AP64060Q_AP64060TQ_AP64060ZQ.pdf
AP64060QWU-7
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 0.8÷26VDC; 0.6A; SMD
Application: automotive industry
Topology: buck
Type of integrated circuit: PMIC
Mounting: SMD
Kind of package: reel; tape
Case: TSOT26
Operating temperature: -40...125°C
Output current: 0.6A
Output voltage: 0.8...26V DC
Input voltage: 4.5...40V DC
Frequency: 2.2MHz
Kind of integrated circuit: DC/DC converter
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
178+0.4 EUR
187+0.38 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ15CA-13-F SMAJ_ser.pdf
SMAJ15CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 17300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
302+0.24 EUR
350+0.2 EUR
527+0.14 EUR
618+0.12 EUR
736+0.097 EUR
820+0.087 EUR
1000+0.08 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ15CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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B260S1F-7 B260S1F.pdf
B260S1F-7
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Semiconductor structure: single diode
Case: SOD123F
Mounting: SMD
Leakage current: 14mA
Kind of package: reel; tape
Capacitance: 75pF
Max. forward voltage: 0.65V
Load current: 2A
Max. forward impulse current: 50A
auf Bestellung 3304 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
234+0.31 EUR
266+0.27 EUR
439+0.16 EUR
603+0.12 EUR
1000+0.1 EUR
3000+0.087 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
AL5819W6-7 AL5819.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ6.0A-13-F SMCJ_ser.pdf
SMCJ6.0A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.67÷7.37V; 145.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 145.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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FZT869TA FZT869.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 7A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 7A
Power dissipation: 3W
Case: SOT223
Pulsed collector current: 20A
Current gain: 40...450
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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PAM2312AABADJ PAM2312.pdf
PAM2312AABADJ
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; 1A; TSOT25; SMD; 1.5MHz
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Efficiency: 96%
Kind of package: reel; tape
auf Bestellung 8770 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
272+0.26 EUR
304+0.24 EUR
353+0.2 EUR
388+0.18 EUR
Mindestbestellmenge: 218
Im Einkaufswagen  Stück im Wert von  UAH
PAM2305AABADJ PAM2305.pdf
PAM2305AABADJ
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; 1A; TSOT25; SMD; 1.5MHz
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Efficiency: 96%
Kind of package: reel; tape
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
207+0.35 EUR
226+0.32 EUR
240+0.3 EUR
Mindestbestellmenge: 143
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AP3428DNTR-G1 AP3428_A.pdf
AP3428DNTR-G1
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: U-DFN2020-6
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Efficiency: 95%
Kind of package: reel; tape
auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
317+0.23 EUR
358+0.2 EUR
417+0.17 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
AP3401DNTR-G1 AP3401x-DTE.pdf
AP3401DNTR-G1
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; DFN6
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: DFN6
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
auf Bestellung 2992 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
253+0.28 EUR
286+0.25 EUR
345+0.21 EUR
388+0.18 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
DF1504S-T DF15005S-DF1510S.pdf
DF1504S-T
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A
Electrical mounting: SMT
Case: DFS
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 1.5A
Max. forward impulse current: 50A
Max. off-state voltage: 0.4kV
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
120+0.6 EUR
137+0.52 EUR
232+0.31 EUR
Mindestbestellmenge: 100
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DMMT5401-7-F DMMT5401.pdf
DMMT5401-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 300mW; SOT26
Mounting: SMD
Kind of package: reel; tape
Case: SOT26
Polarisation: bipolar
Type of transistor: PNP x2
Collector current: 0.2A
Power dissipation: 0.3W
Quantity in set/package: 3000pcs.
Current gain: 30...250
Collector-emitter voltage: 150V
Frequency: 100...300MHz
auf Bestellung 973 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
229+0.31 EUR
274+0.26 EUR
355+0.2 EUR
432+0.17 EUR
511+0.14 EUR
625+0.11 EUR
Mindestbestellmenge: 162
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AP2502KTR-G1 AP2502.pdf
AP2502KTR-G1
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC switcher,LED driver; Uin: 2÷6VDC; TSOT23-6
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; LED driver
Input voltage: 2...6V DC
Case: TSOT23-6
Mounting: SMD
Frequency: 150kHz
Number of channels: 4
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: for LED applications
auf Bestellung 1075 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
269+0.27 EUR
304+0.24 EUR
353+0.2 EUR
404+0.18 EUR
Mindestbestellmenge: 218
Im Einkaufswagen  Stück im Wert von  UAH
AL5815W5-7 AL5815-AL5816.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; SOT25; 15mA; Ch: 1; 4.5÷60VDC
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 4.5...60V DC
Kind of integrated circuit: LED driver
Type of integrated circuit: driver
Operating temperature: -40...105°C
Output current: 15mA
Number of channels: 1
Produkt ist nicht verfügbar
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DGD0215WT-7 DGD0215-0216.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; TSOT25; -1.8÷1.9A; Ch: 1
Case: TSOT25
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...18V
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -40...125°C
Output current: -1.8...1.9A
Pulse fall time: 25ns
Impulse rise time: 25ns
Number of channels: 1
Produkt ist nicht verfügbar
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74AHC1G08QSE-7 74AHC1G08Q.pdf
Hersteller: DIODES INCORPORATED
Category: Other logic integrated circuits
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.057 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
74AHC1G08QW5-7 74AHC1G08Q.pdf
Hersteller: DIODES INCORPORATED
Category: Other logic integrated circuits
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DSS5140U-7 ds31690.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 500mW; SOT323
Mounting: SMD
Power dissipation: 0.5W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 40V
Current gain: 160...800
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT323
Type of transistor: PNP
Produkt ist nicht verfügbar
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DSS5140V-7 ds31658.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 600mW; SOT563
Mounting: SMD
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 40V
Current gain: 160...800
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT563
Type of transistor: PNP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP2008UFG-7 DMP2008UFG.pdf
DMP2008UFG-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: PowerDI®3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain-source voltage: -20V
Drain current: -11A
On-state resistance: 8mΩ
Power dissipation: 2.4W
Gate-source voltage: ±8V
auf Bestellung 2870 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
184+0.39 EUR
221+0.32 EUR
232+0.31 EUR
500+0.27 EUR
1000+0.24 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
DMP2004K-7 DMP2004K.pdf
DMP2004K-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23; ESD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Case: SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -600mA
On-state resistance: 2Ω
Power dissipation: 0.55W
Gate-source voltage: ±8V
auf Bestellung 1282 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
334+0.21 EUR
484+0.15 EUR
577+0.12 EUR
847+0.085 EUR
1000+0.073 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
DMHT3006LFJ-13 DMHT3006LFJ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 80A; 2.1W
Mounting: SMD
Case: V-DFN5045-12
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 17nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 80A
Produkt ist nicht verfügbar
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SBRT10U60D1Q-13 SBRT10U60D1Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; Trench SBR®; SMD; 60V; 10A
Type of diode: Schottky rectifying
Case: TO252/DPAK
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Leakage current: 80µA
Max. forward impulse current: 140A
Kind of package: reel
Produkt ist nicht verfügbar
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AS78L05MTR-G1 AS78Lxx_Aug2013_DS.pdf
Hersteller: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; SO8; SMD; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: AS78LXX
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AS78L05MTR-E1 AS78Lxx_Aug2013_DS.pdf
Hersteller: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; SO8; SMD; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: AS78LXX
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DESD32VS2SO-7 DESD32VS2SO.pdf
DESD32VS2SO-7
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 34V; unidirectional; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 34V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 32V
Leakage current: 0.1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 42pF
Application: automotive industry
auf Bestellung 1636 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
481+0.15 EUR
516+0.14 EUR
Mindestbestellmenge: 385
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MBR10200CT-G1 MBR10200C.pdf
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 5Ax2; TO220AB; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: tube
Leakage current: 15mA
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74LV04AS14-13 74LV04A.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LV
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 2...5.5V DC
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74LV04AT14-13 74LV04A.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LV
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 2...5.5V DC
Produkt ist nicht verfügbar
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DMNH6021SPSQ-13 DMNH6021SPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 1.6W; PowerDI®5060-8
Mounting: SMD
Polarisation: unipolar
On-state resistance: 28mΩ
Power dissipation: 1.6W
Drain current: 48A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Case: PowerDI®5060-8
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMNH6021SPD-13 DMNH6021SPD.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 25A; 1.5W; PowerDI®5060-8
Mounting: SMD
Polarisation: unipolar
On-state resistance: 40mΩ
Power dissipation: 1.5W
Drain current: 25A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Case: PowerDI®5060-8
Type of transistor: N-MOSFET x2
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DMNH6021SPDQ-13 DMNH6021SPDQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 80A; 2.8W
Mounting: SMD
Polarisation: unipolar
Gate charge: 20.1nC
On-state resistance: 40mΩ
Power dissipation: 2.8W
Drain current: 6.5A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Case: PowerDI5060-8
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMNH6021SPDW-13 DMNH6021SPDW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 80A; 2.8W
Mounting: SMD
Polarisation: unipolar
Gate charge: 20.1nC
On-state resistance: 40mΩ
Power dissipation: 2.8W
Drain current: 6.5A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Case: PowerDI5060-8
Type of transistor: N-MOSFET
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DMNH10H021SPSW-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.4W; PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Gate charge: 71nC
On-state resistance: 28mΩ
Power dissipation: 4.4W
Drain-source voltage: 100V
Case: PowerDI5060-8
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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1N4934-T 1N4934_37.pdf
1N4934-T
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
auf Bestellung 495 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
495+0.14 EUR
Mindestbestellmenge: 495
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GBJ1508-F GBJ15_ser.pdf
GBJ1508-F
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 0.24kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.05V
Leads: flat pin
Case: GBJ
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.69 EUR
37+1.97 EUR
40+1.79 EUR
43+1.69 EUR
Mindestbestellmenge: 27
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74LVC1G08FS3-7 74LVC1G08.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN0808-4; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN0808-4
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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