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DMT32M5LFG-7 DIODES INCORPORATED DMT32M5LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 67.7nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 7 inch reel; tape
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DMT32M5LPS-13 DIODES INCORPORATED DMT32M5LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
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DMT32M5LPSW-13 DIODES INCORPORATED DMT32M5LPSW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2W; PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Power dissipation: 3.2W
Case: PowerDI5060-8
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 34nC
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DMT69M5LCG-7 DIODES INCORPORATED DMT69M5LCG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.7A
Power dissipation: 2.64W
Case: V-DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 208A
Kind of package: 7 inch reel; tape
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DMT69M5LFVWQ-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Power dissipation: 2.74W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 160A
Kind of package: 13 inch reel; tape
Application: automotive industry
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DMT69M5LH3 DIODES INCORPORATED DMT69M5LH3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 300A; 3.3W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 3.3W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 300A
Kind of package: tube
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DMTH45M5LPSWQ-13 DIODES INCORPORATED DMTH45M5LPSWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 86A; Idm: 344A; 72W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 86A
Power dissipation: 72W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of channel: enhancement
Pulsed drain current: 344A
Kind of package: 13 inch reel; tape
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DMT10H4M5LPS-13 DIODES INCORPORATED DMT10H4M5LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 2.3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
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DMTH32M5LPSQ-13 DIODES INCORPORATED DMTH32M5LPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±16V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Application: automotive industry
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DMTH45M5LPDWQ-13 DIODES INCORPORATED DMTH45M5LPDWQ.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of channel: enhancement
Pulsed drain current: 316A
Kind of package: 13 inch reel; tape
Application: automotive industry
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DMTH63M5LFGQ-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90.3A; 3.4W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90.3A
Power dissipation: 3.4W
Case: PowerDI3333-8
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 41.2nC
Application: automotive industry
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DMTH10H4M5LPS-13 DIODES INCORPORATED DMTH10H4M5LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14A
Power dissipation: 2.7W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
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MMBT6427-7-F MMBT6427-7-F DIODES INCORPORATED MMBT6427-7-F.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
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DMG7408SFG-7 DIODES INCORPORATED DMG7408SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W
Mounting: SMD
Pulsed drain current: 66A
Power dissipation: 2.1W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 7.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 33mΩ
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AZ1117D-ADJTRE1 AZ1117D-ADJTRE1 DIODES INCORPORATED AZ1117_Rev5.3_Jan2019_DS.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.25V
Output voltage: 1.25...15V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
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AZ1117IH-ADJTRG1 AZ1117IH-ADJTRG1 DIODES INCORPORATED AZ1117I.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.25...15V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117I
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
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AZ1117ID-ADJTRG1 AZ1117ID-ADJTRG1 DIODES INCORPORATED AZ1117I.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.25...15V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117I
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
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BC857AT-7-F BC857AT-7-F DIODES INCORPORATED ds30275.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 100mA; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
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BC857AW-7-F BC857AW-7-F DIODES INCORPORATED BC856AW-BC858CW.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
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B250-13-F B250-13-F DIODES INCORPORATED B220A_B260A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 0.2nF
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
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B250A-13-F B250A-13-F DIODES INCORPORATED B220_A-B260_A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 0.2nF
Max. forward voltage: 0.7V
Leakage current: 20mA
Max. forward impulse current: 50A
Kind of package: reel; tape
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BAS21TW-7 BAS21TW-7 DIODES INCORPORATED BAS21TW.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
Features of semiconductor devices: small signal
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SBR10E45P5-7 DIODES INCORPORATED SBR10E45P5.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 45V; 10A; PowerDI®5; Ufmax: 0.42V; Ifsm: 275A
Type of diode: rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: PowerDI®5
Max. forward voltage: 0.42V
Max. forward impulse current: 275A
Kind of package: reel; tape
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DDZ6V8ASF-7 DDZ6V8ASF-7 DIODES INCORPORATED ds31987.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Semiconductor structure: single diode
Case: SOD323F
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.5W
Zener voltage: 6.8V
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ZVN3320FTA ZVN3320FTA DIODES INCORPORATED ZVN3320F.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.06A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60mA
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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ZVP2110A ZVP2110A DIODES INCORPORATED ZVP2110A.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.23A; Idm: -3A; 0.7W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -230mA
Pulsed drain current: -3A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
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ZVP2110ASTZ ZVP2110ASTZ DIODES INCORPORATED ZVP2110A.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -230mA; Idm: -3A; 700mW; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -230mA
Pulsed drain current: -3A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
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DMP1045UFY4-7 DMP1045UFY4-7 DIODES INCORPORATED DMP1045UFY4.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -5.1A
Gate charge: 23.7nC
On-state resistance: 75mΩ
Power dissipation: 1.1W
Kind of package: 7 inch reel; tape
Gate-source voltage: ±8V
Kind of channel: enhancement
Case: X2-DFN2015-3
Pulsed drain current: -25A
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DMP1045U-7 DMP1045U-7 DIODES INCORPORATED DMP1045U.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -3.1A
On-state resistance: 75mΩ
Power dissipation: 0.8W
Kind of package: 7 inch reel; tape
Gate-source voltage: ±8V
Kind of channel: enhancement
Version: ESD
Case: SOT23
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DMP1045UQ-7 DIODES INCORPORATED DMP1045UQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; automotive industry
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Application: automotive industry
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SMAJ48A-13-F SMAJ48A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMAJ48CA-13-F SMAJ48CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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FZT1048ATA FZT1048ATA DIODES INCORPORATED FZT1048A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 17.5V; 5A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 17.5V
Collector current: 5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
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FZT1049ATA FZT1049ATA DIODES INCORPORATED FZT1049A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Manufacturer standard package: 1000pcs.
Current gain: 300...1200
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AP63200WU-7 AP63200WU-7 DIODES INCORPORATED AP63200-1-3-5.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 1.2÷12VDC; 2A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 1.2...12V DC
Output current: 2A
Case: TSOT26
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 93%
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ZXTN2005GTA DIODES INCORPORATED ZXTN2005G.pdf Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
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S5GC-13-F DIODES INCORPORATED ds16007.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 5A; SMC; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 5A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.15V
Kind of package: reel; tape
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74LV32AT14-13 74LV32AT14-13 DIODES INCORPORATED 74LV32A.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LV
Kind of input: with Schmitt trigger
Kind of output: push-pull
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ZXTN2031FTA ZXTN2031FTA DIODES INCORPORATED ZXTN2031F.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 5A; 1.56W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Power dissipation: 1.56W
Case: SOT23
Current gain: 80...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Manufacturer standard package: 3000pcs.
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74AHCT14T14-13 74AHCT14T14-13 DIODES INCORPORATED 74AHCT14.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; -40÷150°C
Type of integrated circuit: digital
Number of channels: 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: push-pull
Kind of input: with Schmitt trigger
Kind of integrated circuit: inverter
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74LVC2G06DW-7 74LVC2G06DW-7 DIODES INCORPORATED 74LVC2G06.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT363; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Case: SOT363
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Technology: CMOS
Family: LVC
Number of channels: 2
Mounting: SMD
Supply voltage: 1.65...5.5V DC
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575+0.14 EUR
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74HC05S14-13 74HC05S14-13 DIODES INCORPORATED 74HC05.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷6VDC; -40÷150°C; HC
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: HC
Kind of integrated circuit: inverter
Kind of output: open drain
Technology: CMOS
Kind of input: with Schmitt trigger
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74HC05T14-13 74HC05T14-13 DIODES INCORPORATED 74HC05.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷150°C
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: HC
Kind of integrated circuit: inverter
Kind of output: open drain
Technology: CMOS
Kind of input: with Schmitt trigger
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AZ23C6V2-7-F AZ23C6V2-7-F DIODES INCORPORATED AZ23C_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; SOT23; double,common anode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Zener voltage: 6.2V
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.3W
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AS358GTR-G1 AS358GTR-G1 DIODES INCORPORATED AS358-358A-358B.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; TSSOP8; 100dB; 2mV; 500mW
Type of integrated circuit: operational amplifier
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Input offset voltage: 2mV
Power dissipation: 0.5W
Open-loop gain: 100dB
Integrated circuit features: low power
Number of channels: 2
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DXT2014P5-13 DIODES INCORPORATED ds32009.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 4A; 3.2W; PowerDI®5
Collector-emitter voltage: 140V
Power dissipation: 3.2W
Polarisation: bipolar
Pulsed collector current: 10A
Type of transistor: PNP
Current gain: 5...300
Kind of package: reel; tape
Case: PowerDI®5
Frequency: 120MHz
Collector current: 4A
Mounting: SMD
Manufacturer standard package: 5000pcs.
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BAS16HLPQ-7B DIODES INCORPORATED BAS16HLPQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: X1-DFN1006-2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS16HLP-7B DIODES INCORPORATED Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: X1-DFN1006-2
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS16HTWQ-13R BAS16HTWQ-13R DIODES INCORPORATED BAS16HTWQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAS16HTW-13 BAS16HTW-13 DIODES INCORPORATED BAS16HTW.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS16HTWQ-13 BAS16HTWQ-13 DIODES INCORPORATED BAS16HTWQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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SB550-T SB550-T DIODES INCORPORATED SB520_ser.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 5A; DO201AD; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.67V
Max. forward impulse current: 150A
Kind of package: reel
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74AHC05T14-13 DIODES INCORPORATED 74AHC05.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: open drain
Kind of input: with Schmitt trigger
Number of inputs: 1
Technology: CMOS
Kind of integrated circuit: inverter
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SBR2045CTFP-G SBR2045CTFP-G DIODES INCORPORATED SBR2045.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; ITO220AB; tube; SBR®
Technology: SBR®
Max. off-state voltage: 45V
Load current: 10A x2
Max. load current: 20A
Kind of package: tube
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Mounting: THT
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SBR20U100CT DIODES INCORPORATED SBR20U100.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 200A; TO220AB; SBR®
Mounting: THT
Case: TO220AB
Technology: SBR®
Type of diode: rectifying
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Max. off-state voltage: 0.1kV
Kind of package: tube
Max. forward impulse current: 200A
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SBR20U100CTE-G DIODES INCORPORATED SBR20U100CTE.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; I2PAK; SBR®
Mounting: THT
Case: I2PAK
Technology: SBR®
Type of diode: rectifying
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Max. off-state voltage: 0.1kV
Kind of package: tube
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BC858BW-7-F BC858BW-7-F DIODES INCORPORATED bc856_7_8W.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Manufacturer standard package: 3000pcs.
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BAV99-13-F BAV99-13-F DIODES INCORPORATED BAV99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAV99Q-7-F BAV99Q-7-F DIODES INCORPORATED BAV99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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74LVC1G126SE-7 74LVC1G126SE-7 DIODES INCORPORATED 74LVC1G126.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Mounting: SMD
Case: SOT353
Manufacturer series: LVC
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Quiescent current: 200µA
Number of channels: 1
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DMT32M5LFG-7 DMT32M5LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 67.7nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 7 inch reel; tape
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DMT32M5LPS-13 DMT32M5LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
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DMT32M5LPSW-13 DMT32M5LPSW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2W; PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Power dissipation: 3.2W
Case: PowerDI5060-8
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 34nC
Produkt ist nicht verfügbar
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DMT69M5LCG-7 DMT69M5LCG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.7A
Power dissipation: 2.64W
Case: V-DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 208A
Kind of package: 7 inch reel; tape
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DMT69M5LFVWQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Power dissipation: 2.74W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 160A
Kind of package: 13 inch reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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DMT69M5LH3 DMT69M5LH3.pdf
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 300A; 3.3W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 3.3W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 300A
Kind of package: tube
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DMTH45M5LPSWQ-13 DMTH45M5LPSWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 86A; Idm: 344A; 72W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 86A
Power dissipation: 72W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of channel: enhancement
Pulsed drain current: 344A
Kind of package: 13 inch reel; tape
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DMT10H4M5LPS-13 DMT10H4M5LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 2.3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
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DMTH32M5LPSQ-13 DMTH32M5LPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±16V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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DMTH45M5LPDWQ-13 DMTH45M5LPDWQ.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of channel: enhancement
Pulsed drain current: 316A
Kind of package: 13 inch reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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DMTH63M5LFGQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90.3A; 3.4W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90.3A
Power dissipation: 3.4W
Case: PowerDI3333-8
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 41.2nC
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DMTH10H4M5LPS-13 DMTH10H4M5LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14A
Power dissipation: 2.7W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
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MMBT6427-7-F MMBT6427-7-F.pdf
MMBT6427-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
auf Bestellung 1339 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
417+0.2 EUR
550+0.15 EUR
857+0.1 EUR
1060+0.08 EUR
1339+0.063 EUR
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DMG7408SFG-7 DMG7408SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W
Mounting: SMD
Pulsed drain current: 66A
Power dissipation: 2.1W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 7.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 33mΩ
Produkt ist nicht verfügbar
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AZ1117D-ADJTRE1 AZ1117_Rev5.3_Jan2019_DS.pdf
AZ1117D-ADJTRE1
Hersteller: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.25V
Output voltage: 1.25...15V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AZ1117IH-ADJTRG1 AZ1117I.pdf
AZ1117IH-ADJTRG1
Hersteller: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.25...15V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117I
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Produkt ist nicht verfügbar
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AZ1117ID-ADJTRG1 AZ1117I.pdf
AZ1117ID-ADJTRG1
Hersteller: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.25...15V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117I
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BC857AT-7-F ds30275.pdf
BC857AT-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 100mA; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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BC857AW-7-F BC856AW-BC858CW.pdf
BC857AW-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Produkt ist nicht verfügbar
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B250-13-F B220A_B260A.pdf
B250-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 0.2nF
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 332 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
179+0.48 EUR
220+0.39 EUR
244+0.35 EUR
332+0.25 EUR
Mindestbestellmenge: 179 Stücke
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B250A-13-F B220_A-B260_A.pdf
B250A-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 0.2nF
Max. forward voltage: 0.7V
Leakage current: 20mA
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAS21TW-7 BAS21TW.pdf
BAS21TW-7
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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SBR10E45P5-7 SBR10E45P5.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 45V; 10A; PowerDI®5; Ufmax: 0.42V; Ifsm: 275A
Type of diode: rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: PowerDI®5
Max. forward voltage: 0.42V
Max. forward impulse current: 275A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DDZ6V8ASF-7 ds31987.pdf
DDZ6V8ASF-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Semiconductor structure: single diode
Case: SOD323F
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.5W
Zener voltage: 6.8V
Produkt ist nicht verfügbar
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ZVN3320FTA ZVN3320F.pdf
ZVN3320FTA
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.06A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60mA
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 252 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
99+0.87 EUR
120+0.71 EUR
139+0.62 EUR
214+0.39 EUR
252+0.35 EUR
Mindestbestellmenge: 99 Stücke
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ZVP2110A ZVP2110A.pdf
ZVP2110A
Hersteller: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.23A; Idm: -3A; 0.7W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -230mA
Pulsed drain current: -3A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
auf Bestellung 1102 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
47+1.82 EUR
72+1.19 EUR
89+0.96 EUR
103+0.83 EUR
110+0.77 EUR
118+0.73 EUR
500+0.6 EUR
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ZVP2110ASTZ ZVP2110A.pdf
ZVP2110ASTZ
Hersteller: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -230mA; Idm: -3A; 700mW; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -230mA
Pulsed drain current: -3A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP1045UFY4-7 DMP1045UFY4.pdf
DMP1045UFY4-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -5.1A
Gate charge: 23.7nC
On-state resistance: 75mΩ
Power dissipation: 1.1W
Kind of package: 7 inch reel; tape
Gate-source voltage: ±8V
Kind of channel: enhancement
Case: X2-DFN2015-3
Pulsed drain current: -25A
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
107+0.8 EUR
130+0.65 EUR
150+0.57 EUR
262+0.32 EUR
500+0.23 EUR
1000+0.2 EUR
Mindestbestellmenge: 107 Stücke
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DMP1045U-7 DMP1045U.pdf
DMP1045U-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -3.1A
On-state resistance: 75mΩ
Power dissipation: 0.8W
Kind of package: 7 inch reel; tape
Gate-source voltage: ±8V
Kind of channel: enhancement
Version: ESD
Case: SOT23
Produkt ist nicht verfügbar
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DMP1045UQ-7 DMP1045UQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; automotive industry
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SMAJ48A-13-F SMAJ_ser.pdf
SMAJ48A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 3233 Stücke:
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AnzahlPrivatkunde
250+0.35 EUR
305+0.27 EUR
350+0.24 EUR
609+0.14 EUR
812+0.1 EUR
1000+0.096 EUR
2500+0.088 EUR
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SMAJ48CA-13-F SMAJ_ser.pdf
SMAJ48CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FZT1048ATA FZT1048A.pdf
FZT1048ATA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 17.5V; 5A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 17.5V
Collector current: 5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
auf Bestellung 871 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
58+1.48 EUR
92+0.93 EUR
139+0.62 EUR
500+0.51 EUR
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FZT1049ATA FZT1049A.pdf
FZT1049ATA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Manufacturer standard package: 1000pcs.
Current gain: 300...1200
auf Bestellung 42 Stücke:
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42+2.02 EUR
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AP63200WU-7 AP63200-1-3-5.pdf
AP63200WU-7
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 1.2÷12VDC; 2A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 1.2...12V DC
Output current: 2A
Case: TSOT26
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 93%
Produkt ist nicht verfügbar
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ZXTN2005GTA ZXTN2005G.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 1000 Stücke:
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AnzahlPrivatkunde
1000+0.67 EUR
Mindestbestellmenge: 1000 Stücke
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S5GC-13-F ds16007.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 5A; SMC; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 5A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.15V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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74LV32AT14-13 74LV32A.pdf
74LV32AT14-13
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LV
Kind of input: with Schmitt trigger
Kind of output: push-pull
auf Bestellung 2418 Stücke:
Lieferzeit 14-21 Tag (e)
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239+0.36 EUR
288+0.3 EUR
325+0.26 EUR
385+0.23 EUR
472+0.18 EUR
521+0.17 EUR
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ZXTN2031FTA ZXTN2031F.pdf
ZXTN2031FTA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 5A; 1.56W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Power dissipation: 1.56W
Case: SOT23
Current gain: 80...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Manufacturer standard package: 3000pcs.
auf Bestellung 1394 Stücke:
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74+1.15 EUR
108+0.79 EUR
142+0.6 EUR
500+0.54 EUR
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74AHCT14T14-13 74AHCT14.pdf
74AHCT14T14-13
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; -40÷150°C
Type of integrated circuit: digital
Number of channels: 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: push-pull
Kind of input: with Schmitt trigger
Kind of integrated circuit: inverter
auf Bestellung 2247 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
250+0.35 EUR
353+0.24 EUR
410+0.2 EUR
496+0.17 EUR
550+0.15 EUR
589+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 250 Stücke
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74LVC2G06DW-7 74LVC2G06.pdf
74LVC2G06DW-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT363; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Case: SOT363
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Technology: CMOS
Family: LVC
Number of channels: 2
Mounting: SMD
Supply voltage: 1.65...5.5V DC
auf Bestellung 1554 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
358+0.24 EUR
432+0.2 EUR
486+0.18 EUR
575+0.14 EUR
705+0.12 EUR
770+0.11 EUR
807+0.11 EUR
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74HC05S14-13 74HC05.pdf
74HC05S14-13
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷6VDC; -40÷150°C; HC
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: HC
Kind of integrated circuit: inverter
Kind of output: open drain
Technology: CMOS
Kind of input: with Schmitt trigger
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74HC05T14-13 74HC05.pdf
74HC05T14-13
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷150°C
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: HC
Kind of integrated circuit: inverter
Kind of output: open drain
Technology: CMOS
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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AZ23C6V2-7-F AZ23C_ser.pdf
AZ23C6V2-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; SOT23; double,common anode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Zener voltage: 6.2V
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.3W
auf Bestellung 394 Stücke:
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AS358GTR-G1 AS358-358A-358B.pdf
AS358GTR-G1
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; TSSOP8; 100dB; 2mV; 500mW
Type of integrated circuit: operational amplifier
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Input offset voltage: 2mV
Power dissipation: 0.5W
Open-loop gain: 100dB
Integrated circuit features: low power
Number of channels: 2
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DXT2014P5-13 ds32009.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 4A; 3.2W; PowerDI®5
Collector-emitter voltage: 140V
Power dissipation: 3.2W
Polarisation: bipolar
Pulsed collector current: 10A
Type of transistor: PNP
Current gain: 5...300
Kind of package: reel; tape
Case: PowerDI®5
Frequency: 120MHz
Collector current: 4A
Mounting: SMD
Manufacturer standard package: 5000pcs.
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BAS16HLPQ-7B BAS16HLPQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: X1-DFN1006-2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS16HLP-7B
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: X1-DFN1006-2
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS16HTWQ-13R BAS16HTWQ.pdf
BAS16HTWQ-13R
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAS16HTW-13 BAS16HTW.pdf
BAS16HTW-13
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS16HTWQ-13 BAS16HTWQ.pdf
BAS16HTWQ-13
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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SB550-T SB520_ser.pdf
SB550-T
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 5A; DO201AD; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.67V
Max. forward impulse current: 150A
Kind of package: reel
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
84+1.02 EUR
105+0.81 EUR
117+0.74 EUR
125+0.68 EUR
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74AHC05T14-13 74AHC05.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: open drain
Kind of input: with Schmitt trigger
Number of inputs: 1
Technology: CMOS
Kind of integrated circuit: inverter
Produkt ist nicht verfügbar
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SBR2045CTFP-G SBR2045.pdf
SBR2045CTFP-G
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; ITO220AB; tube; SBR®
Technology: SBR®
Max. off-state voltage: 45V
Load current: 10A x2
Max. load current: 20A
Kind of package: tube
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Mounting: THT
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
85+1 EUR
97+0.88 EUR
126+0.68 EUR
143+0.6 EUR
159+0.54 EUR
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SBR20U100CT SBR20U100.pdf
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 200A; TO220AB; SBR®
Mounting: THT
Case: TO220AB
Technology: SBR®
Type of diode: rectifying
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Max. off-state voltage: 0.1kV
Kind of package: tube
Max. forward impulse current: 200A
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SBR20U100CTE-G SBR20U100CTE.pdf
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; I2PAK; SBR®
Mounting: THT
Case: I2PAK
Technology: SBR®
Type of diode: rectifying
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Max. off-state voltage: 0.1kV
Kind of package: tube
Produkt ist nicht verfügbar
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BC858BW-7-F bc856_7_8W.pdf
BC858BW-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Manufacturer standard package: 3000pcs.
Produkt ist nicht verfügbar
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BAV99-13-F BAV99.pdf
BAV99-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAV99Q-7-F BAV99.pdf
BAV99Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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74LVC1G126SE-7 74LVC1G126.pdf
74LVC1G126SE-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Mounting: SMD
Case: SOT353
Manufacturer series: LVC
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Quiescent current: 200µA
Number of channels: 1
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715+0.12 EUR
1180+0.073 EUR
1273+0.067 EUR
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