Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74252) > Seite 1182 nach 1238
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BZX84C33-13-F | DIODES INCORPORATED |
 Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 33V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.35W Zener voltage: 33V Mounting: SMD Tolerance: ±6% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape |
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Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BZX84C33T-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.15W; 33V; SMD; SOT523; single diode; reel,tape Type of diode: Zener Power dissipation: 0.15W Zener voltage: 33V Mounting: SMD Tolerance: ±6% Case: SOT523 Semiconductor structure: single diode Kind of package: reel; tape |
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Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BZX84C33Q-13-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 350mW; 33V; SMD; SOT23 Type of diode: Zener Power dissipation: 0.35W Zener voltage: 33V Mounting: SMD Tolerance: ±6.1% Case: SOT23 |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MJD340-13 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK,TO252 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 15W Case: DPAK; TO252 Current gain: 30...240 Mounting: SMD Kind of package: reel; tape Frequency: 10MHz Pulsed collector current: 0.75A Quantity in set/package: 2500pcs. |
auf Bestellung 2480 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2078LCA3-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W Kind of package: 7 inch reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: X4-DSN1006-3 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -13A Drain current: -2.7A Gate charge: 1.6nC On-state resistance: 0.6Ω Power dissipation: 1.4W Gate-source voltage: ±12V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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SMAJ40CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 6.2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
auf Bestellung 1575 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ40CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 6.2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Application: automotive industry |
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BAV116WS-7 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD323 Max. forward voltage: 1.25V Kind of package: reel; tape |
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BAV116WSQ-7 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD323 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry |
auf Bestellung 1270 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVC86AT14-13 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC Type of integrated circuit: digital Kind of gate: XOR Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Operating temperature: -40...150°C Kind of output: push-pull Family: LVC Supply voltage: 1.65...5.5V DC Kind of package: reel; tape |
auf Bestellung 2219 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C2V7Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 2.7V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.35W Zener voltage: 2.7V Mounting: SMD Tolerance: ±7.5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
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| BZX84C2V7T-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.15W; 2.7V; SMD; SOT523; single diode; reel,tape Type of diode: Zener Power dissipation: 0.15W Zener voltage: 2.7V Mounting: SMD Tolerance: ±7% Case: SOT523 Semiconductor structure: single diode Kind of package: reel; tape |
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BZX84C2V7TS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 2.7V; SMD; SOT363; triple independent Type of diode: Zener Power dissipation: 0.2W Zener voltage: 2.7V Mounting: SMD Tolerance: ±7.5% Case: SOT363 Semiconductor structure: triple independent Kind of package: reel; tape |
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BZX84C2V7W-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 2.7V; SMD; SOT323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 2.7V Mounting: SMD Tolerance: ±7.5% Case: SOT323 Semiconductor structure: single diode Kind of package: reel; tape |
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SMCJ5.0A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 163A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1mA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMCJ5.0AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 163A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1mA Features of semiconductor devices: glass passivated Kind of package: reel; tape Application: automotive industry |
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3.0SMCJ5.0A-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 6.4÷7.07V; 326.1A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 326.1A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1mA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SMAZ6V8-13-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 6.8V; SMD; SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1W Zener voltage: 6.8V Mounting: SMD Tolerance: ±5% Case: SMA Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BAS70W-04-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: double series Max. forward voltage: 1V Max. forward impulse current: 0.1A Kind of package: reel; tape |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002H-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.37W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Power dissipation: 0.37W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
auf Bestellung 8092 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002A-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.14A; Idm: 0.8A; 0.37W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.14A Power dissipation: 0.37W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A Version: ESD |
auf Bestellung 575 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.37W; SOT23; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Power dissipation: 0.37W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Application: automotive industry |
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2N7002H-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; 510mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Power dissipation: 0.51W Case: SOT23 On-state resistance: 7.5Ω Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| KBP408G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 130A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 4A Max. forward impulse current: 130A Version: flat Case: KBP Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
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D1213A-01T-7 | DIODES INCORPORATED |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; unidirectional; SOD523; Ch: 1; reel,tape Type of diode: TVS array Breakdown voltage: 6V Semiconductor structure: unidirectional Mounting: SMD Case: SOD523 Max. off-state voltage: 3.3V Leakage current: 1µA Number of channels: 1 Capacitance: 1.2pF Application: automotive industry Kind of package: reel; tape |
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FZT600TA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 2A Power dissipation: 3W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Manufacturer standard package: 1000pcs. |
auf Bestellung 590 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT32M5LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 67.7nC Kind of channel: enhancement Pulsed drain current: 350A Kind of package: 7 inch reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT32M5LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 120A Power dissipation: 3.2W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 68nC Kind of channel: enhancement Pulsed drain current: 350A Kind of package: 13 inch reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT32M5LPSW-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.2W; PowerDI5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Power dissipation: 3.2W Case: PowerDI5060-8 On-state resistance: 2mΩ Mounting: SMD Gate charge: 34nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT69M5LCG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11.7A Power dissipation: 2.64W Case: V-DFN3333-8 Gate-source voltage: ±20V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 28.4nC Kind of channel: enhancement Pulsed drain current: 208A Kind of package: 7 inch reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT69M5LFVWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11.9A Power dissipation: 2.74W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 28.4nC Kind of channel: enhancement Pulsed drain current: 160A Kind of package: 13 inch reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT69M5LH3 | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 300A; 3.3W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Power dissipation: 3.3W Case: TO251 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 28.4nC Kind of channel: enhancement Pulsed drain current: 300A Kind of package: tube |
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| DMTH45M5LPSWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 86A; Idm: 344A; 72W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 86A Power dissipation: 72W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 13.9nC Kind of channel: enhancement Pulsed drain current: 344A Kind of package: 13 inch reel; tape |
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| DMT10H4M5LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 2.3W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 80nC Kind of channel: enhancement Pulsed drain current: 400A Kind of package: 13 inch reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMTH32M5LPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 120A Power dissipation: 3.2W Case: PowerDI5060-8 Gate-source voltage: ±16V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 68nC Kind of channel: enhancement Pulsed drain current: 350A Kind of package: 13 inch reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMTH45M5LPDWQ-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Power dissipation: 3W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 7.9mΩ Mounting: SMD Gate charge: 13.9nC Kind of channel: enhancement Pulsed drain current: 316A Kind of package: 13 inch reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMTH63M5LFGQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90.3A; 3.4W; PowerDI3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 90.3A Power dissipation: 3.4W Case: PowerDI3333-8 On-state resistance: 4mΩ Mounting: SMD Gate charge: 41.2nC Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMTH10H4M5LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 14A Power dissipation: 2.7W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 80nC Kind of channel: enhancement Pulsed drain current: 400A Kind of package: 13 inch reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MMBT6427-7-F | DIODES INCORPORATED |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 40V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Manufacturer standard package: 3000pcs. |
auf Bestellung 1259 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG7408SFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.5A Power dissipation: 2.1W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Gate charge: 17nC Kind of channel: enhancement Pulsed drain current: 66A Kind of package: 7 inch reel; tape |
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AZ1117D-ADJTRE1 | DIODES INCORPORATED |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.25V Output voltage: 1.25...15V Output current: 1A Case: DPAK Mounting: SMD Manufacturer series: AZ1117 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.5...10V |
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AZ1117IH-ADJTRG1 | DIODES INCORPORATED |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.3V Output voltage: 1.25...15V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: AZ1117I Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.5...10V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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AZ1117ID-ADJTRG1 | DIODES INCORPORATED |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.4V Output voltage: 1.25...15V Output current: 1A Case: DPAK Mounting: SMD Manufacturer series: AZ1117I Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.5...10V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BC857AT-7-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 100mA; 150mW; SOT523 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Manufacturer standard package: 3000pcs. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BC857AW-7-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Frequency: 100...200MHz Manufacturer standard package: 3000pcs. Pulsed collector current: 0.2A |
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B250-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 50V Load current: 2A Semiconductor structure: single diode Capacitance: 0.2nF Max. forward voltage: 0.7V Max. forward impulse current: 50A Kind of package: reel; tape |
auf Bestellung 332 Stücke: Lieferzeit 14-21 Tag (e) |
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B250A-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 50V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 50V Load current: 2A Semiconductor structure: single diode Capacitance: 0.2nF Max. forward voltage: 0.7V Leakage current: 20mA Max. forward impulse current: 50A Kind of package: reel; tape |
auf Bestellung 4726 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS21TW-7 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: triple independent Case: SOT363 Max. forward voltage: 1.25V Max. forward impulse current: 10A Kind of package: reel; tape Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
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| SBR10E45P5-7 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 45V; 10A; PowerDI®5; Ufmax: 0.42V; Ifsm: 275A Type of diode: rectifying Technology: SBR® Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Case: PowerDI®5 Max. forward voltage: 0.42V Max. forward impulse current: 275A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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DDZ6V8ASF-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD323F; reel,tape; single diode Type of diode: Zener Semiconductor structure: single diode Case: SOD323F Mounting: SMD Kind of package: reel; tape Power dissipation: 0.5W Zener voltage: 6.8V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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ZVN3320FTA | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.06A; 0.33W; SOT23 Power dissipation: 0.33W Polarisation: unipolar Drain current: 60mA Kind of channel: enhancement Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT23 On-state resistance: 25Ω Mounting: SMD |
auf Bestellung 1992 Stücke: Lieferzeit 14-21 Tag (e) |
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ZVP2110A | DIODES INCORPORATED |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -0.23A; Idm: -3A; 0.7W; TO92 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -0.23A Pulsed drain current: -3A Power dissipation: 0.7W Case: TO92 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement |
auf Bestellung 1102 Stücke: Lieferzeit 14-21 Tag (e) |
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ZVP2110ASTZ | DIODES INCORPORATED |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -230mA; Idm: -3A; 700mW; TO92 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -0.23A Pulsed drain current: -3A Power dissipation: 0.7W Case: TO92 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DMP1045UFY4-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W Type of transistor: P-MOSFET Polarisation: unipolar Mounting: SMD Drain-source voltage: -12V Drain current: -5.1A Gate charge: 23.7nC On-state resistance: 75mΩ Power dissipation: 1.1W Kind of package: 7 inch reel; tape Gate-source voltage: ±8V Kind of channel: enhancement Case: X2-DFN2015-3 Pulsed drain current: -25A |
auf Bestellung 2490 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP1045U-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23; ESD Type of transistor: P-MOSFET Polarisation: unipolar Mounting: SMD Drain-source voltage: -12V Drain current: -3.1A On-state resistance: 75mΩ Power dissipation: 0.8W Kind of package: 7 inch reel; tape Gate-source voltage: ±8V Kind of channel: enhancement Version: ESD Case: SOT23 |
Produkt ist nicht verfügbar |
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| DMP1045UQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; automotive industry Type of transistor: P-MOSFET Polarisation: unipolar Mounting: SMD Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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SMAJ48A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 48V Breakdown voltage: 53.3...58.9V Max. forward impulse current: 5.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
auf Bestellung 3233 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ48CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 48V Breakdown voltage: 53.3...58.9V Max. forward impulse current: 5.2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FZT1048ATA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 17.5V; 5A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 17.5V Collector current: 5A Power dissipation: 3W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Manufacturer standard package: 1000pcs. |
auf Bestellung 871 Stücke: Lieferzeit 14-21 Tag (e) |
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FZT1049ATA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 25V; 5A; 1.2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 5A Power dissipation: 1.2W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz Manufacturer standard package: 1000pcs. Current gain: 300...1200 |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
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| BZX84C33-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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| BZX84C33T-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 33V; SMD; SOT523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Case: SOT523
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 33V; SMD; SOT523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Case: SOT523
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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| BZX84C33Q-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 350mW; 33V; SMD; SOT23
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6.1%
Case: SOT23
Category: SMD Zener diodes
Description: Diode: Zener; 350mW; 33V; SMD; SOT23
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6.1%
Case: SOT23
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| MJD340-13 |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 30...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 10MHz
Pulsed collector current: 0.75A
Quantity in set/package: 2500pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 30...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 10MHz
Pulsed collector current: 0.75A
Quantity in set/package: 2500pcs.
auf Bestellung 2480 Stücke:
Lieferzeit 14-21 Tag (e)
| DMP2078LCA3-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: X4-DSN1006-3
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -13A
Drain current: -2.7A
Gate charge: 1.6nC
On-state resistance: 0.6Ω
Power dissipation: 1.4W
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: X4-DSN1006-3
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -13A
Drain current: -2.7A
Gate charge: 1.6nC
On-state resistance: 0.6Ω
Power dissipation: 1.4W
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| SMAJ40CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 1575 Stücke:
Lieferzeit 14-21 Tag (e)
| SMAJ40CAQ-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAV116WS-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| BAV116WSQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 1270 Stücke:
Lieferzeit 14-21 Tag (e)
| 74LVC86AT14-13 |
|
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
auf Bestellung 2219 Stücke:
Lieferzeit 14-21 Tag (e)
| BZX84C2V7Q-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.7V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.7V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84C2V7T-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 2.7V; SMD; SOT523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7%
Case: SOT523
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 2.7V; SMD; SOT523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7%
Case: SOT523
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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| BZX84C2V7TS-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84C2V7W-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ5.0A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ5.0AQ-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 3.0SMCJ5.0A-13 |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.07V; 326.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 326.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.07V; 326.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 326.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SMAZ6V8-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.8V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.8V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
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| BAS70W-04-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| 2N7002H-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 8092 Stücke:
Lieferzeit 14-21 Tag (e)
| 2N7002A-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.14A; Idm: 0.8A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.14A; Idm: 0.8A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Version: ESD
auf Bestellung 575 Stücke:
Lieferzeit 14-21 Tag (e)
| 2N7002AQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.37W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.37W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
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| 2N7002H-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; 510mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.51W
Case: SOT23
On-state resistance: 7.5Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; 510mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.51W
Case: SOT23
On-state resistance: 7.5Ω
Mounting: SMD
Produkt ist nicht verfügbar
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| KBP408G |
|
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 130A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 130A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 130A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 130A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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| D1213A-01T-7 |
|
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOD523; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Capacitance: 1.2pF
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOD523; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Capacitance: 1.2pF
Application: automotive industry
Kind of package: reel; tape
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| FZT600TA |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Manufacturer standard package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Manufacturer standard package: 1000pcs.
auf Bestellung 590 Stücke:
Lieferzeit 14-21 Tag (e)
| DMT32M5LFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 67.7nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 67.7nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| DMT32M5LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| DMT32M5LPSW-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2W; PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Power dissipation: 3.2W
Case: PowerDI5060-8
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 34nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2W; PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Power dissipation: 3.2W
Case: PowerDI5060-8
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 34nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| DMT69M5LCG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.7A
Power dissipation: 2.64W
Case: V-DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 208A
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.7A
Power dissipation: 2.64W
Case: V-DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 208A
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| DMT69M5LFVWQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Power dissipation: 2.74W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 160A
Kind of package: 13 inch reel; tape
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Power dissipation: 2.74W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 160A
Kind of package: 13 inch reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| DMT69M5LH3 |
|
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 300A; 3.3W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 3.3W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 300A
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 300A; 3.3W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 3.3W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 300A
Kind of package: tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMTH45M5LPSWQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 86A; Idm: 344A; 72W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 86A
Power dissipation: 72W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of channel: enhancement
Pulsed drain current: 344A
Kind of package: 13 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 86A; Idm: 344A; 72W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 86A
Power dissipation: 72W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of channel: enhancement
Pulsed drain current: 344A
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMT10H4M5LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 2.3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 2.3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| DMTH32M5LPSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±16V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±16V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| DMTH45M5LPDWQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of channel: enhancement
Pulsed drain current: 316A
Kind of package: 13 inch reel; tape
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of channel: enhancement
Pulsed drain current: 316A
Kind of package: 13 inch reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| DMTH63M5LFGQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90.3A; 3.4W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90.3A
Power dissipation: 3.4W
Case: PowerDI3333-8
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 41.2nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90.3A; 3.4W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90.3A
Power dissipation: 3.4W
Case: PowerDI3333-8
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 41.2nC
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| DMTH10H4M5LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14A
Power dissipation: 2.7W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14A
Power dissipation: 2.7W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| MMBT6427-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
auf Bestellung 1259 Stücke:
Lieferzeit 14-21 Tag (e)
| DMG7408SFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhancement
Pulsed drain current: 66A
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhancement
Pulsed drain current: 66A
Kind of package: 7 inch reel; tape
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| AZ1117D-ADJTRE1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.25V
Output voltage: 1.25...15V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.25V
Output voltage: 1.25...15V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AZ1117IH-ADJTRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.25...15V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117I
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.25...15V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117I
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| AZ1117ID-ADJTRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.25...15V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117I
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.25...15V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117I
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC857AT-7-F |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 100mA; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 100mA; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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Stück im Wert von UAH
| BC857AW-7-F |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B250-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 0.2nF
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 0.2nF
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 332 Stücke:
Lieferzeit 14-21 Tag (e)
| B250A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 0.2nF
Max. forward voltage: 0.7V
Leakage current: 20mA
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 0.2nF
Max. forward voltage: 0.7V
Leakage current: 20mA
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 4726 Stücke:
Lieferzeit 14-21 Tag (e)
| BAS21TW-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBR10E45P5-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 45V; 10A; PowerDI®5; Ufmax: 0.42V; Ifsm: 275A
Type of diode: rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: PowerDI®5
Max. forward voltage: 0.42V
Max. forward impulse current: 275A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 45V; 10A; PowerDI®5; Ufmax: 0.42V; Ifsm: 275A
Type of diode: rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: PowerDI®5
Max. forward voltage: 0.42V
Max. forward impulse current: 275A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DDZ6V8ASF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Semiconductor structure: single diode
Case: SOD323F
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.5W
Zener voltage: 6.8V
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Semiconductor structure: single diode
Case: SOD323F
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.5W
Zener voltage: 6.8V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZVN3320FTA |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.06A; 0.33W; SOT23
Power dissipation: 0.33W
Polarisation: unipolar
Drain current: 60mA
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 25Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.06A; 0.33W; SOT23
Power dissipation: 0.33W
Polarisation: unipolar
Drain current: 60mA
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 25Ω
Mounting: SMD
auf Bestellung 1992 Stücke:
Lieferzeit 14-21 Tag (e)
| ZVP2110A |
|
Hersteller: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.23A; Idm: -3A; 0.7W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.23A
Pulsed drain current: -3A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.23A; Idm: -3A; 0.7W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.23A
Pulsed drain current: -3A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
auf Bestellung 1102 Stücke:
Lieferzeit 14-21 Tag (e)
| ZVP2110ASTZ |
|
Hersteller: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -230mA; Idm: -3A; 700mW; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.23A
Pulsed drain current: -3A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -230mA; Idm: -3A; 700mW; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.23A
Pulsed drain current: -3A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| DMP1045UFY4-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -5.1A
Gate charge: 23.7nC
On-state resistance: 75mΩ
Power dissipation: 1.1W
Kind of package: 7 inch reel; tape
Gate-source voltage: ±8V
Kind of channel: enhancement
Case: X2-DFN2015-3
Pulsed drain current: -25A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -5.1A
Gate charge: 23.7nC
On-state resistance: 75mΩ
Power dissipation: 1.1W
Kind of package: 7 inch reel; tape
Gate-source voltage: ±8V
Kind of channel: enhancement
Case: X2-DFN2015-3
Pulsed drain current: -25A
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)
| DMP1045U-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -3.1A
On-state resistance: 75mΩ
Power dissipation: 0.8W
Kind of package: 7 inch reel; tape
Gate-source voltage: ±8V
Kind of channel: enhancement
Version: ESD
Case: SOT23
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -3.1A
On-state resistance: 75mΩ
Power dissipation: 0.8W
Kind of package: 7 inch reel; tape
Gate-source voltage: ±8V
Kind of channel: enhancement
Version: ESD
Case: SOT23
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMP1045UQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; automotive industry
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; automotive industry
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ48A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 3233 Stücke:
Lieferzeit 14-21 Tag (e)
| SMAJ48CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FZT1048ATA |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 17.5V; 5A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 17.5V
Collector current: 5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 17.5V; 5A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 17.5V
Collector current: 5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
auf Bestellung 871 Stücke:
Lieferzeit 14-21 Tag (e)
| FZT1049ATA |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Manufacturer standard package: 1000pcs.
Current gain: 300...1200
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Manufacturer standard package: 1000pcs.
Current gain: 300...1200
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)