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SMBJ18AQ-13-F SMBJ18AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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ES1G-13-F ES1G-13-F DIODES INCORPORATED ds14001.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SMA; Ufmax: 1.25V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 20pF
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186+0.46 EUR
360+0.24 EUR
397+0.21 EUR
417+0.2 EUR
500+0.18 EUR
1000+0.17 EUR
5000+0.15 EUR
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FES1GE FES1GE DIODES INCORPORATED FES1GE.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 25ns; DO219AA; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: DO219AA
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 14pF
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AL9910AS-13 AL9910AS-13 DIODES INCORPORATED AL9910_A.pdf Category: LED drivers
Description: IC: driver; LED driver; SO8; Ch: 1; PWM,linear dimming; 10VDC; 90%
Type of integrated circuit: driver
Mounting: SMD
Case: SO8
Operating voltage: 10V DC
Operating temperature: -40...105°C
Integrated circuit features: linear dimming; PWM
Efficiency: 90%
Kind of package: reel; tape
Kind of integrated circuit: LED driver
Number of channels: 1
auf Bestellung 1235 Stücke:
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40+2.18 EUR
55+1.57 EUR
59+1.45 EUR
62+1.38 EUR
100+1.3 EUR
250+1.21 EUR
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SMAJ30CA-13-F SMAJ30CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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228+0.37 EUR
302+0.29 EUR
424+0.2 EUR
481+0.18 EUR
562+0.15 EUR
610+0.14 EUR
1000+0.13 EUR
3000+0.12 EUR
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MMSZ5237B-7-F MMSZ5237B-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 8.2V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
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MMSZ5237BS-7-F MMSZ5237BS-7-F DIODES INCORPORATED mmsz52xxbs_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 8.2V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
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BCX54TA BCX54TA DIODES INCORPORATED BCX54x-DTE.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
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BCX5410TA BCX5410TA DIODES INCORPORATED BCX54x-DTE.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
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BCX5416TA BCX5416TA DIODES INCORPORATED BCX54x-DTE.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
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DDTC123EUA-7-F DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
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BCP5510TA BCP5510TA DIODES INCORPORATED BCP54_55_56.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
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AS331KTR-G1 AS331KTR-G1 DIODES INCORPORATED AS331.pdf Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; SMT; SOT25; reel,tape; 200nA
Mounting: SMT
Operating temperature: -40...85°C
Kind of output: open collector
Kind of package: reel; tape
Case: SOT25
Input offset current: 200nA
Input offset voltage: 7mV
Number of comparators: 1
Voltage supply range: ± 1...18V DC; 2...36V DC
Type of integrated circuit: comparator
Kind of comparator: low-power
auf Bestellung 2760 Stücke:
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295+0.29 EUR
358+0.24 EUR
400+0.21 EUR
468+0.18 EUR
569+0.15 EUR
618+0.14 EUR
650+0.13 EUR
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ZXTD718MCTA ZXTD718MCTA DIODES INCORPORATED ZXTD718MC.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 3.5A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 3.5A
Power dissipation: 2.45W
Case: DFN3020B-8
Pulsed collector current: 6A
Current gain: 15...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 150...180MHz
Manufacturer standard package: 3000pcs.
auf Bestellung 1973 Stücke:
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77+1.11 EUR
87+0.98 EUR
123+0.69 EUR
500+0.54 EUR
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SMBJ30CAQ-13-F SMBJ30CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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74LVC244AQ20-13 DIODES INCORPORATED 74LVC244A.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 8bit; Ch: 9; IN: 9; CMOS; SMD; V-QFN4525-20; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: 8bit
Mounting: SMD
Case: V-QFN4525-20
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of inputs: 9
Family: LVC
Number of channels: 9
Supply voltage: 1.65...3.6V DC
Kind of output: push-pull
Technology: CMOS
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74LVC244AT20-13 74LVC244AT20-13 DIODES INCORPORATED 74LVC244A.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 8
Supply voltage: 1.65...3.6V DC
Manufacturer series: LVC
Kind of output: 3-state
Technology: CMOS
Quiescent current: 40µA
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DMG2307LQ-7 DMG2307LQ-7 DIODES INCORPORATED DMG2307LQ_Rev2.3_Feb2022.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -20A; 1.9W; SOT23
Application: automotive industry
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -3.6A
Gate charge: 8.2nC
On-state resistance: 0.134Ω
Power dissipation: 1.9W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
auf Bestellung 39 Stücke:
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FL2400022 DIODES INCORPORATED FL.pdf Category: Resonators and Generators
Description: Resonator: ceramic; 10pF; SMD; ESR: 50Ω; 3.2x2.5mm; 24MHz; -25÷85°C
Operating temperature: -25...85°C
Frequency: 24MHz
Type of resonator: ceramic
Mounting: SMD
Capacitance: 10pF
Body dimensions: 3.2x2.5mm
ESR value: 50Ω
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DF04M DF04M DIODES INCORPORATED DF005_10M.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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GBU1006 GBU1006 DIODES INCORPORATED GBU10_ser.pdf description Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A
Case: GBU
Kind of package: tube
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 0.6kV
Electrical mounting: THT
Load current: 10A
Type of bridge rectifier: single-phase
Max. forward impulse current: 220A
Version: flat
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28+3.13 EUR
43+2.02 EUR
46+1.86 EUR
51+1.69 EUR
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AP3015AKTR-G1 AP3015AKTR-G1 DIODES INCORPORATED AP3015x-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 1÷12VDC; Uout: 1.23÷34VDC; 0.1A; SOT25
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 1...12V DC
Output current: 0.1A
Case: SOT25
Mounting: SMD
Frequency: 150kHz
Topology: boost
Operating temperature: -40...85°C
Efficiency: 81%
Output voltage: 1.23...34V DC
Kind of package: reel; tape
auf Bestellung 986 Stücke:
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109+0.79 EUR
155+0.55 EUR
172+0.5 EUR
197+0.43 EUR
250+0.4 EUR
500+0.39 EUR
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1N4003G-T 1N4003G-T DIODES INCORPORATED 1N4001G_ser.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; DO41; reel,tape; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Kind of package: reel; tape
Max. forward voltage: 1V
Reverse recovery time: 2µs
Capacitance: 8pF
auf Bestellung 760 Stücke:
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358+0.24 EUR
544+0.15 EUR
760+0.11 EUR
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BAV170T-7-F BAV170T-7-F DIODES INCORPORATED ds30258.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT523
Max. forward voltage: 1.1V
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 2520 Stücke:
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715+0.12 EUR
747+0.11 EUR
953+0.089 EUR
1158+0.074 EUR
1270+0.067 EUR
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BAV170Q-13-F BAV170Q-13-F DIODES INCORPORATED BAV170.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Capacitance: 2pF
Features of semiconductor devices: small signal
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BAV170-7-F BAV170-7-F DIODES INCORPORATED ds30234.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Features of semiconductor devices: small signal
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BAV170Q-7-F BAV170Q-7-F DIODES INCORPORATED ds30234.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
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KBP304G DIODES INCORPORATED KBP304G-KBP310G.pdf KBP3005G%20THRU%20KBP310G%20N1917%20REV.A.pdf kbp302g.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 3A; Ifsm: 90A; flat
Electrical mounting: THT
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 90A
Max. off-state voltage: 0.4kV
Case: KBP
Features of semiconductor devices: glass passivated
Version: flat
Leads: flat pin
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74LVC1G07W5-7 74LVC1G07W5-7 DIODES INCORPORATED 74LVC1G07.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Manufacturer series: LVC
auf Bestellung 1951 Stücke:
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500+0.17 EUR
658+0.13 EUR
747+0.11 EUR
875+0.098 EUR
1073+0.08 EUR
1180+0.073 EUR
1250+0.068 EUR
1306+0.065 EUR
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DMP4047LFDE-7 DMP4047LFDE-7 DIODES INCORPORATED DMP4047LFDE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.9A; 0.7W; U-DFN2020-6
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.9A
On-state resistance: 50mΩ
Power dissipation: 0.7W
Gate-source voltage: ±20V
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DMP4047SK3-13 DMP4047SK3-13 DIODES INCORPORATED DMP4047SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -18A; 1.6W; TO252
Kind of package: 13 inch reel; tape
Case: TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -18A
On-state resistance: 55mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
auf Bestellung 1144 Stücke:
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66+1.3 EUR
106+0.81 EUR
164+0.52 EUR
500+0.4 EUR
1000+0.36 EUR
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DMC4047LSD-13 DMC4047LSD-13 DIODES INCORPORATED DMC4047LSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.3W
Polarisation: unipolar
Drain current: 6.3/-6.3A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.024/0.04Ω
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DMP4047LFDEQ-7 DIODES INCORPORATED DMP4047LFDEQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -36A
Drain current: -5.2A
Gate charge: 24.9nC
On-state resistance: 50mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
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DMP4047LFDEQ-13 DIODES INCORPORATED DMP4047LFDEQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -36A
Drain current: -5.2A
Gate charge: 24.9nC
On-state resistance: 50mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
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ZVN3310FTA ZVN3310FTA DIODES INCORPORATED ZVN3310F.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.1A; Idm: 2A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2A
auf Bestellung 180 Stücke:
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125+0.69 EUR
180+0.48 EUR
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DMN10H220L-7 DMN10H220L-7 DIODES INCORPORATED DMN10H220L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN10H220LK3-13 DMN10H220LK3-13 DIODES INCORPORATED DMN10H220LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.7A; Idm: 30A; 7.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.7A
Pulsed drain current: 30A
Power dissipation: 7.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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BCX5210TA BCX5210TA DIODES INCORPORATED BCX51_52_53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
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BCP5610TA BCP5610TA DIODES INCORPORATED BCP54_55_56.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
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DMP2240UDM-7 DMP2240UDM-7 DIODES INCORPORATED ds31197.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; 0.6W; SOT26
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Power dissipation: 0.6W
Case: SOT26
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 5741 Stücke:
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MMBD4148-7-F MMBD4148-7-F DIODES INCORPORATED BAS16-7-DTE.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Max. load current: 0.3A
Capacitance: 2pF
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910+0.094 EUR
1544+0.055 EUR
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2632+0.032 EUR
2841+0.03 EUR
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MMBD4148TW-7-F MMBD4148TW-7-F DIODES INCORPORATED ds30154.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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MMBD4148PLM-7 DIODES INCORPORATED MMBD4148PLM.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; U-DFN1616-6; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; fivefold
Case: U-DFN1616-6
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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S1MSWFMQ-7 DIODES INCORPORATED S1MSWFMQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.2us; SOD123F; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.2µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
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DMP2066LDMQ-7 DMP2066LDMQ-7 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SOT26
Mounting: SMD
Case: SOT26
Kind of package: 7 inch reel; tape
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Pulsed drain current: -18A
Drain current: -3.7A
Gate charge: 10.1nC
On-state resistance: 70mΩ
Power dissipation: 1.25W
Gate-source voltage: ±12V
Polarisation: unipolar
Kind of channel: enhancement
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DDTC143ZE-7-F DIODES INCORPORATED ds30314.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Power dissipation: 0.15W
Current gain: 80
Frequency: 250MHz
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74LVC125AT14-13 74LVC125AT14-13 DIODES INCORPORATED 74LVC125A.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: TSSOP14
Operating temperature: -40...125°C
Kind of package: reel; tape
Technology: CMOS
Quiescent current: 40µA
Number of channels: 4
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Manufacturer series: LVC
Kind of output: 3-state
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74LVC125AS14-13 74LVC125AS14-13 DIODES INCORPORATED 74LVC125A.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 4; CMOS; SMD; SO14; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Case: SO14
Operating temperature: -40...150°C
Kind of package: reel; tape
Technology: CMOS
Family: LVC
Number of channels: 4
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Produkt ist nicht verfügbar
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DSS20200L-7 DSS20200L-7 DIODES INCORPORATED ds31604.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2A; 1.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT23
Pulsed collector current: 4A
Current gain: 150...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
auf Bestellung 2615 Stücke:
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112+0.76 EUR
178+0.48 EUR
300+0.29 EUR
321+0.26 EUR
500+0.19 EUR
1000+0.17 EUR
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PAM2841SR PAM2841SR DIODES INCORPORATED PAM2841.pdf Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 10÷40mA; MSOP8; SMD; Ch: 1
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 1
Case: MSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter; LED driver
Operating voltage: 2.8...5.5V DC
Output current: 10...40mA
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AZV393MMTR-G1 AZV393MMTR-G1 DIODES INCORPORATED AZV393.pdf Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; SMT; MSOP8; reel,tape; 150nA
Case: MSOP8
Mounting: SMT
Kind of package: reel; tape
Input offset voltage: 9mV
Type of integrated circuit: comparator
Kind of output: open collector
Operating temperature: -40...85°C
Number of comparators: 2
Voltage supply range: 2.5...5.5V DC
Input offset current: 150nA
Kind of comparator: low-power
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ZXM64P02XTA ZXM64P02XTA DIODES INCORPORATED ZXM64P02X.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -19A; 1.1W; MSOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -19A
Power dissipation: 1.1W
Case: MSOP8
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 949 Stücke:
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100+1.12 EUR
500+0.89 EUR
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SMAZ16-13-F SMAZ16-13-F DIODES INCORPORATED SMAZx-13-F.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 357 Stücke:
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295+0.29 EUR
357+0.24 EUR
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SB1100-T SB1100-T DIODES INCORPORATED ds30116.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 0.8V; reel
Capacitance: 80pF
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 25A
Max. forward voltage: 0.8V
Max. off-state voltage: 0.1kV
Load current: 1A
Kind of package: reel
Semiconductor structure: single diode
Case: DO41
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BZT52C18SQ-7-F BZT52C18SQ-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 1302 Stücke:
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500+0.17 EUR
685+0.12 EUR
1137+0.075 EUR
1302+0.064 EUR
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DMT6016LSS-13 DMT6016LSS-13 DIODES INCORPORATED DMT6016LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.5A; Idm: 60A; 2.1W; SO8
Drain current: 9.5A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 28mΩ
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 2.1W
Gate charge: 17nC
Polarisation: unipolar
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DMT6016LFDF-7 DIODES INCORPORATED DMT6016LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 1.2W
Drain current: 8.9A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 27mΩ
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 1.2W
Gate charge: 17nC
Polarisation: unipolar
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DMT6013LFDF-7 DIODES INCORPORATED DMT6013LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 60A; 1.2W; U-DFN2020-6
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 21.5mΩ
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 1.2W
Gate charge: 15nC
Polarisation: unipolar
Produkt ist nicht verfügbar
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S1G-13-F S1G-13-F DIODES INCORPORATED s1ab-s1mb.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 546 Stücke:
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472+0.18 EUR
538+0.15 EUR
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RS1G-13-F RS1G-13-F DIODES INCORPORATED ds15002.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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SMBJ18AQ-13-F ds40740.pdf
SMBJ18AQ-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ES1G-13-F ds14001.pdf
ES1G-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SMA; Ufmax: 1.25V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 20pF
auf Bestellung 5131 Stücke:
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186+0.46 EUR
360+0.24 EUR
397+0.21 EUR
417+0.2 EUR
500+0.18 EUR
1000+0.17 EUR
5000+0.15 EUR
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FES1GE FES1GE.pdf
FES1GE
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 25ns; DO219AA; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: DO219AA
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 14pF
Produkt ist nicht verfügbar
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AL9910AS-13 AL9910_A.pdf
AL9910AS-13
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; SO8; Ch: 1; PWM,linear dimming; 10VDC; 90%
Type of integrated circuit: driver
Mounting: SMD
Case: SO8
Operating voltage: 10V DC
Operating temperature: -40...105°C
Integrated circuit features: linear dimming; PWM
Efficiency: 90%
Kind of package: reel; tape
Kind of integrated circuit: LED driver
Number of channels: 1
auf Bestellung 1235 Stücke:
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40+2.18 EUR
55+1.57 EUR
59+1.45 EUR
62+1.38 EUR
100+1.3 EUR
250+1.21 EUR
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SMAJ30CA-13-F SMAJ_ser.pdf
SMAJ30CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 3687 Stücke:
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228+0.37 EUR
302+0.29 EUR
424+0.2 EUR
481+0.18 EUR
562+0.15 EUR
610+0.14 EUR
1000+0.13 EUR
3000+0.12 EUR
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MMSZ5237B-7-F mmsz52xxb_Ser.pdf
MMSZ5237B-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 8.2V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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MMSZ5237BS-7-F mmsz52xxbs_ser.pdf
MMSZ5237BS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 8.2V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BCX54TA BCX54x-DTE.pdf
BCX54TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
Produkt ist nicht verfügbar
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BCX5410TA BCX54x-DTE.pdf
BCX5410TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
Produkt ist nicht verfügbar
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BCX5416TA BCX54x-DTE.pdf
BCX5416TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
Produkt ist nicht verfügbar
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DDTC123EUA-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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BCP5510TA BCP54_55_56.pdf
BCP5510TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
Produkt ist nicht verfügbar
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AS331KTR-G1 AS331.pdf
AS331KTR-G1
Hersteller: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; SMT; SOT25; reel,tape; 200nA
Mounting: SMT
Operating temperature: -40...85°C
Kind of output: open collector
Kind of package: reel; tape
Case: SOT25
Input offset current: 200nA
Input offset voltage: 7mV
Number of comparators: 1
Voltage supply range: ± 1...18V DC; 2...36V DC
Type of integrated circuit: comparator
Kind of comparator: low-power
auf Bestellung 2760 Stücke:
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295+0.29 EUR
358+0.24 EUR
400+0.21 EUR
468+0.18 EUR
569+0.15 EUR
618+0.14 EUR
650+0.13 EUR
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ZXTD718MCTA ZXTD718MC.pdf
ZXTD718MCTA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 3.5A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 3.5A
Power dissipation: 2.45W
Case: DFN3020B-8
Pulsed collector current: 6A
Current gain: 15...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 150...180MHz
Manufacturer standard package: 3000pcs.
auf Bestellung 1973 Stücke:
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77+1.11 EUR
87+0.98 EUR
123+0.69 EUR
500+0.54 EUR
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SMBJ30CAQ-13-F ds40740.pdf
SMBJ30CAQ-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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74LVC244AQ20-13 74LVC244A.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; 8bit; Ch: 9; IN: 9; CMOS; SMD; V-QFN4525-20; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: 8bit
Mounting: SMD
Case: V-QFN4525-20
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of inputs: 9
Family: LVC
Number of channels: 9
Supply voltage: 1.65...3.6V DC
Kind of output: push-pull
Technology: CMOS
Produkt ist nicht verfügbar
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74LVC244AT20-13 74LVC244A.pdf
74LVC244AT20-13
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 8
Supply voltage: 1.65...3.6V DC
Manufacturer series: LVC
Kind of output: 3-state
Technology: CMOS
Quiescent current: 40µA
Produkt ist nicht verfügbar
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DMG2307LQ-7 DMG2307LQ_Rev2.3_Feb2022.pdf
DMG2307LQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -20A; 1.9W; SOT23
Application: automotive industry
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -3.6A
Gate charge: 8.2nC
On-state resistance: 0.134Ω
Power dissipation: 1.9W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
auf Bestellung 39 Stücke:
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AnzahlPrivatkunde
39+2.18 EUR
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FL2400022 FL.pdf
Hersteller: DIODES INCORPORATED
Category: Resonators and Generators
Description: Resonator: ceramic; 10pF; SMD; ESR: 50Ω; 3.2x2.5mm; 24MHz; -25÷85°C
Operating temperature: -25...85°C
Frequency: 24MHz
Type of resonator: ceramic
Mounting: SMD
Capacitance: 10pF
Body dimensions: 3.2x2.5mm
ESR value: 50Ω
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.5 EUR
Mindestbestellmenge: 3000 Stücke
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DF04M DF005_10M.pdf
DF04M
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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GBU1006 description GBU10_ser.pdf
GBU1006
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A
Case: GBU
Kind of package: tube
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 0.6kV
Electrical mounting: THT
Load current: 10A
Type of bridge rectifier: single-phase
Max. forward impulse current: 220A
Version: flat
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28+3.13 EUR
43+2.02 EUR
46+1.86 EUR
51+1.69 EUR
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AP3015AKTR-G1 AP3015x-DTE.pdf
AP3015AKTR-G1
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 1÷12VDC; Uout: 1.23÷34VDC; 0.1A; SOT25
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 1...12V DC
Output current: 0.1A
Case: SOT25
Mounting: SMD
Frequency: 150kHz
Topology: boost
Operating temperature: -40...85°C
Efficiency: 81%
Output voltage: 1.23...34V DC
Kind of package: reel; tape
auf Bestellung 986 Stücke:
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109+0.79 EUR
155+0.55 EUR
172+0.5 EUR
197+0.43 EUR
250+0.4 EUR
500+0.39 EUR
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1N4003G-T 1N4001G_ser.pdf
1N4003G-T
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; DO41; reel,tape; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Kind of package: reel; tape
Max. forward voltage: 1V
Reverse recovery time: 2µs
Capacitance: 8pF
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358+0.24 EUR
544+0.15 EUR
760+0.11 EUR
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BAV170T-7-F ds30258.pdf
BAV170T-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT523
Max. forward voltage: 1.1V
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 2520 Stücke:
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625+0.13 EUR
715+0.12 EUR
747+0.11 EUR
953+0.089 EUR
1158+0.074 EUR
1270+0.067 EUR
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BAV170Q-13-F BAV170.pdf
BAV170Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Capacitance: 2pF
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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BAV170-7-F ds30234.pdf
BAV170-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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BAV170Q-7-F ds30234.pdf
BAV170Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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KBP304G KBP304G-KBP310G.pdf KBP3005G%20THRU%20KBP310G%20N1917%20REV.A.pdf kbp302g.pdf
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 3A; Ifsm: 90A; flat
Electrical mounting: THT
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 90A
Max. off-state voltage: 0.4kV
Case: KBP
Features of semiconductor devices: glass passivated
Version: flat
Leads: flat pin
Produkt ist nicht verfügbar
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74LVC1G07W5-7 74LVC1G07.pdf
74LVC1G07W5-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Manufacturer series: LVC
auf Bestellung 1951 Stücke:
Lieferzeit 14-21 Tag (e)
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500+0.17 EUR
658+0.13 EUR
747+0.11 EUR
875+0.098 EUR
1073+0.08 EUR
1180+0.073 EUR
1250+0.068 EUR
1306+0.065 EUR
Mindestbestellmenge: 500 Stücke
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DMP4047LFDE-7 DMP4047LFDE.pdf
DMP4047LFDE-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.9A; 0.7W; U-DFN2020-6
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.9A
On-state resistance: 50mΩ
Power dissipation: 0.7W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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DMP4047SK3-13 DMP4047SK3.pdf
DMP4047SK3-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -18A; 1.6W; TO252
Kind of package: 13 inch reel; tape
Case: TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -18A
On-state resistance: 55mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
auf Bestellung 1144 Stücke:
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66+1.3 EUR
106+0.81 EUR
164+0.52 EUR
500+0.4 EUR
1000+0.36 EUR
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DMC4047LSD-13 DMC4047LSD-13.pdf
DMC4047LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.3W
Polarisation: unipolar
Drain current: 6.3/-6.3A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.024/0.04Ω
Produkt ist nicht verfügbar
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DMP4047LFDEQ-7 DMP4047LFDEQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -36A
Drain current: -5.2A
Gate charge: 24.9nC
On-state resistance: 50mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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DMP4047LFDEQ-13 DMP4047LFDEQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -36A
Drain current: -5.2A
Gate charge: 24.9nC
On-state resistance: 50mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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ZVN3310FTA ZVN3310F.pdf
ZVN3310FTA
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.1A; Idm: 2A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2A
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
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87+0.99 EUR
125+0.69 EUR
180+0.48 EUR
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DMN10H220L-7 DMN10H220L.pdf
DMN10H220L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN10H220LK3-13 DMN10H220LK3.pdf
DMN10H220LK3-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.7A; Idm: 30A; 7.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.7A
Pulsed drain current: 30A
Power dissipation: 7.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 1203 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
91+0.94 EUR
138+0.62 EUR
235+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
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BCX5210TA BCX51_52_53.pdf
BCX5210TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
Produkt ist nicht verfügbar
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BCP5610TA BCP54_55_56.pdf
BCP5610TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
Produkt ist nicht verfügbar
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DMP2240UDM-7 ds31197.pdf
DMP2240UDM-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; 0.6W; SOT26
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Power dissipation: 0.6W
Case: SOT26
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 5741 Stücke:
Lieferzeit 14-21 Tag (e)
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167+0.51 EUR
253+0.33 EUR
334+0.25 EUR
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MMBD4148-7-F BAS16-7-DTE.pdf
MMBD4148-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Max. load current: 0.3A
Capacitance: 2pF
auf Bestellung 2990 Stücke:
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AnzahlPrivatkunde
625+0.13 EUR
807+0.11 EUR
910+0.094 EUR
1544+0.055 EUR
2233+0.038 EUR
2632+0.032 EUR
2841+0.03 EUR
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MMBD4148TW-7-F ds30154.pdf
MMBD4148TW-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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MMBD4148PLM-7 MMBD4148PLM.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; U-DFN1616-6; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; fivefold
Case: U-DFN1616-6
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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S1MSWFMQ-7 S1MSWFMQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.2us; SOD123F; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.2µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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DMP2066LDMQ-7
DMP2066LDMQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SOT26
Mounting: SMD
Case: SOT26
Kind of package: 7 inch reel; tape
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Pulsed drain current: -18A
Drain current: -3.7A
Gate charge: 10.1nC
On-state resistance: 70mΩ
Power dissipation: 1.25W
Gate-source voltage: ±12V
Polarisation: unipolar
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DDTC143ZE-7-F ds30314.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Power dissipation: 0.15W
Current gain: 80
Frequency: 250MHz
Produkt ist nicht verfügbar
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74LVC125AT14-13 74LVC125A.pdf
74LVC125AT14-13
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: TSSOP14
Operating temperature: -40...125°C
Kind of package: reel; tape
Technology: CMOS
Quiescent current: 40µA
Number of channels: 4
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Manufacturer series: LVC
Kind of output: 3-state
Produkt ist nicht verfügbar
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74LVC125AS14-13 74LVC125A.pdf
74LVC125AS14-13
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 4; CMOS; SMD; SO14; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Case: SO14
Operating temperature: -40...150°C
Kind of package: reel; tape
Technology: CMOS
Family: LVC
Number of channels: 4
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Produkt ist nicht verfügbar
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DSS20200L-7 ds31604.pdf
DSS20200L-7
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2A; 1.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT23
Pulsed collector current: 4A
Current gain: 150...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
auf Bestellung 2615 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
112+0.76 EUR
178+0.48 EUR
300+0.29 EUR
321+0.26 EUR
500+0.19 EUR
1000+0.17 EUR
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PAM2841SR PAM2841.pdf
PAM2841SR
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 10÷40mA; MSOP8; SMD; Ch: 1
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 1
Case: MSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter; LED driver
Operating voltage: 2.8...5.5V DC
Output current: 10...40mA
Produkt ist nicht verfügbar
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AZV393MMTR-G1 AZV393.pdf
AZV393MMTR-G1
Hersteller: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; SMT; MSOP8; reel,tape; 150nA
Case: MSOP8
Mounting: SMT
Kind of package: reel; tape
Input offset voltage: 9mV
Type of integrated circuit: comparator
Kind of output: open collector
Operating temperature: -40...85°C
Number of comparators: 2
Voltage supply range: 2.5...5.5V DC
Input offset current: 150nA
Kind of comparator: low-power
auf Bestellung 726 Stücke:
Lieferzeit 14-21 Tag (e)
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575+0.14 EUR
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ZXM64P02XTA ZXM64P02X.pdf
ZXM64P02XTA
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -19A; 1.1W; MSOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -19A
Power dissipation: 1.1W
Case: MSOP8
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 949 Stücke:
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33+2.58 EUR
52+1.65 EUR
100+1.12 EUR
500+0.89 EUR
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SMAZ16-13-F SMAZx-13-F.pdf
SMAZ16-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 357 Stücke:
Lieferzeit 14-21 Tag (e)
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295+0.29 EUR
357+0.24 EUR
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SB1100-T ds30116.pdf
SB1100-T
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 0.8V; reel
Capacitance: 80pF
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 25A
Max. forward voltage: 0.8V
Max. off-state voltage: 0.1kV
Load current: 1A
Kind of package: reel
Semiconductor structure: single diode
Case: DO41
Produkt ist nicht verfügbar
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BZT52C18SQ-7-F BZT52CxxS_ser.pdf
BZT52C18SQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 1302 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
500+0.17 EUR
685+0.12 EUR
1137+0.075 EUR
1302+0.064 EUR
Mindestbestellmenge: 500 Stücke
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DMT6016LSS-13 DMT6016LSS.pdf
DMT6016LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.5A; Idm: 60A; 2.1W; SO8
Drain current: 9.5A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 28mΩ
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 2.1W
Gate charge: 17nC
Polarisation: unipolar
Produkt ist nicht verfügbar
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DMT6016LFDF-7 DMT6016LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 1.2W
Drain current: 8.9A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 27mΩ
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 1.2W
Gate charge: 17nC
Polarisation: unipolar
Produkt ist nicht verfügbar
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DMT6013LFDF-7 DMT6013LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 60A; 1.2W; U-DFN2020-6
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 21.5mΩ
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 1.2W
Gate charge: 15nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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S1G-13-F s1ab-s1mb.pdf
S1G-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 546 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
385+0.23 EUR
472+0.18 EUR
538+0.15 EUR
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RS1G-13-F ds15002.pdf
RS1G-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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