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BAV170T-7-F BAV170T-7-F DIODES INCORPORATED ds30258.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT523
Max. forward voltage: 1.1V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAV170Q-13-F BAV170Q-13-F DIODES INCORPORATED BAV170.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Capacitance: 2pF
Features of semiconductor devices: small signal
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BAV170-7-F BAV170-7-F DIODES INCORPORATED ds30234.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Features of semiconductor devices: small signal
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BAV170Q-7-F BAV170Q-7-F DIODES INCORPORATED ds30234.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
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KBP304G DIODES INCORPORATED KBP304G-KBP310G.pdf KBP3005G%20THRU%20KBP310G%20N1917%20REV.A.pdf kbp302g.pdf kbp302g.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 3A; Ifsm: 90A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 3A
Max. forward impulse current: 90A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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74LVC1G07W5-7 74LVC1G07W5-7 DIODES INCORPORATED 74LVC1G07.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 200µA
Manufacturer series: LVC
Kind of output: open drain
Kind of integrated circuit: buffer; non-inverting
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DMP4047LFDE-7 DMP4047LFDE-7 DIODES INCORPORATED DMP4047LFDE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.9A; 0.7W; U-DFN2020-6
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.9A
On-state resistance: 50mΩ
Power dissipation: 0.7W
Gate-source voltage: ±20V
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DMP4047SK3-13 DMP4047SK3-13 DIODES INCORPORATED DMP4047SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -18A; 1.6W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -18A
Power dissipation: 1.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMC4047LSD-13 DMC4047LSD-13 DIODES INCORPORATED DMC4047LSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.3W
Polarisation: unipolar
Drain current: 6.3/-6.3A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.024/0.04Ω
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DMP4047LFDEQ-7 DIODES INCORPORATED DMP4047LFDEQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -36A
Drain current: -5.2A
Gate charge: 24.9nC
On-state resistance: 50mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
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DMP4047LFDEQ-13 DIODES INCORPORATED DMP4047LFDEQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -36A
Drain current: -5.2A
Gate charge: 24.9nC
On-state resistance: 50mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
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ZVN3310FTA ZVN3310FTA DIODES INCORPORATED ZVN3310F.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.1A; Idm: 2A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.1A
Pulsed drain current: 2A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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DMN10H220L-7 DMN10H220L-7 DIODES INCORPORATED DMN10H220L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN10H220LK3-13 DMN10H220LK3-13 DIODES INCORPORATED DMN10H220LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.7A; Idm: 30A; 7.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.7A
Pulsed drain current: 30A
Power dissipation: 7.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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BCX5210TA BCX5210TA DIODES INCORPORATED BCX51_52_53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
Current gain: 63...160
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BCP5610TA BCP5610TA DIODES INCORPORATED BCP54_55_56.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
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DMP2240UDM-7 DMP2240UDM-7 DIODES INCORPORATED ds31197.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; 0.6W; SOT26
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Power dissipation: 0.6W
Case: SOT26
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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MMBD4148-7-F MMBD4148-7-F DIODES INCORPORATED BAS16-7-DTE.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Max. load current: 0.3A
Capacitance: 2pF
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MMBD4148TW-7-F MMBD4148TW-7-F DIODES INCORPORATED ds30154.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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MMBD4148PLM-7 DIODES INCORPORATED MMBD4148PLM.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; U-DFN1616-6; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; fivefold
Case: U-DFN1616-6
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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S1MSWFMQ-7 S1MSWFMQ-7 DIODES INCORPORATED S1MSWFMQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.2us; SOD123F; Ufmax: 1.1V
Application: automotive industry
Max. off-state voltage: 1kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Type of diode: rectifying
Reverse recovery time: 1.2µs
Mounting: SMD
Max. forward impulse current: 25A
Max. forward voltage: 1.1V
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DMP2066LDMQ-7 DMP2066LDMQ-7 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SOT26
Pulsed drain current: -18A
Power dissipation: 1.25W
Gate charge: 10.1nC
Polarisation: unipolar
Drain current: -3.7A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: SOT26
On-state resistance: 70mΩ
Mounting: SMD
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DDTC143ZE-7-F DIODES INCORPORATED ds30314.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Power dissipation: 0.15W
Current gain: 80
Frequency: 250MHz
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74LVC125AT14-13 74LVC125AT14-13 DIODES INCORPORATED 74LVC125A.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Manufacturer series: LVC
Operating temperature: -40...125°C
Quiescent current: 40µA
Kind of package: reel; tape
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74LVC125AS14-13 74LVC125AS14-13 DIODES INCORPORATED 74LVC125A.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 4; CMOS; SMD; SO14; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Kind of output: 3-state
Family: LVC
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
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DSS20200L-7 DSS20200L-7 DIODES INCORPORATED ds31604.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2A; 1.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT23
Pulsed collector current: 4A
Current gain: 150...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
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PAM2841SR PAM2841SR DIODES INCORPORATED PAM2841.pdf Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 10÷40mA; MSOP8; SMD; Ch: 1
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 1
Case: MSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter; LED driver
Operating voltage: 2.8...5.5V DC
Output current: 10...40mA
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AZV393MMTR-G1 AZV393MMTR-G1 DIODES INCORPORATED AZV393.pdf Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; SMT; MSOP8; reel,tape; 150nA
Type of integrated circuit: comparator
Case: MSOP8
Mounting: SMT
Input offset voltage: 9mV
Kind of output: open collector
Operating temperature: -40...85°C
Number of comparators: 2
Voltage supply range: 2.5...5.5V DC
Kind of package: reel; tape
Input offset current: 150nA
Kind of comparator: low-power
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SMAZ16-13-F SMAZ16-13-F DIODES INCORPORATED SMAZx-13-F.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
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SB1100-T SB1100-T DIODES INCORPORATED ds30116.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 0.8V; reel
Type of diode: Schottky rectifying
Case: DO41
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 80pF
Max. forward voltage: 0.8V
Max. forward impulse current: 25A
Kind of package: reel
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BZT52C18SQ-7-F BZT52C18SQ-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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DMT6016LSS-13 DMT6016LSS-13 DIODES INCORPORATED DMT6016LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.5A; Idm: 60A; 2.1W; SO8
Drain current: 9.5A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 28mΩ
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 2.1W
Gate charge: 17nC
Polarisation: unipolar
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DMT6016LFDF-7 DIODES INCORPORATED DMT6016LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 1.2W
Drain current: 8.9A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 27mΩ
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 1.2W
Gate charge: 17nC
Polarisation: unipolar
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DMT6013LFDF-7 DIODES INCORPORATED DMT6013LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 60A; 1.2W; U-DFN2020-6
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 21.5mΩ
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 1.2W
Gate charge: 15nC
Polarisation: unipolar
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S1G-13-F S1G-13-F DIODES INCORPORATED s1ab-s1mb.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
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RS1G-13-F RS1G-13-F DIODES INCORPORATED ds15002.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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MMBF170-7-F MMBF170-7-F DIODES INCORPORATED MMBF170.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5.3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
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AP2210K-5.0TRG1 AP2210K-5.0TRG1 DIODES INCORPORATED AP2210.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.3A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...13V
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AP2210K-ADJTRG1 AP2210K-ADJTRG1 DIODES INCORPORATED AP2210.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12.7V; 0.3A
Mounting: SMD
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: AP2210
Input voltage: 2.5...13V
Output current: 0.3A
Type of integrated circuit: voltage regulator
Voltage drop: 0.5V
Operating temperature: -40...125°C
Output voltage: 1.25...12.7V
Kind of package: reel; tape
Case: SOT23-5
Number of channels: 1
Tolerance: ±2%
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AP2210K-2.8TRG1 AP2210K-2.8TRG1 DIODES INCORPORATED AP2210.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.3A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 2.8V
Output current: 0.3A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
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AP2210K-3.3TRE1 AP2210K-3.3TRE1 DIODES INCORPORATED AP2210.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3.3V
Output current: 0.3A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
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AP2210K-2.5TRE1 AP2210K-2.5TRE1 DIODES INCORPORATED AP2210.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 2.5V
Output current: 0.3A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
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AP2210K-2.5TRG1 AP2210K-2.5TRG1 DIODES INCORPORATED AP2210.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 2.5V
Output current: 0.3A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
Produkt ist nicht verfügbar
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2DB1184Q-13 2DB1184Q-13 DIODES INCORPORATED 2DB1184Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 15W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Manufacturer standard package: 2500pcs.
Pulsed collector current: 4.5A
Frequency: 110MHz
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AP63203QWU-7 DIODES INCORPORATED AP63200Q_AP63201Q_AP63203Q_AP63205Q.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 3.3VDC; 2A; TSOT26; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 3.3V DC
Output current: 2A
Case: TSOT26
Mounting: SMD
Frequency: 1.1MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 93%
Application: automotive industry
Produkt ist nicht verfügbar
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PAM2320BECADJR DIODES INCORPORATED PAM2320_June2021_Rev.4-2.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; PSOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 3A
Case: PSOP8
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
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BS107PSTZ BS107PSTZ DIODES INCORPORATED BS107P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.12A; 0.5W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.12A
Power dissipation: 0.5W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 23Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
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BS107P BS107P DIODES INCORPORATED BS107P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.12A; 0.5W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.12A
Power dissipation: 0.5W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 23Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
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ZMR500FTA ZMR500FTA DIODES INCORPORATED ZMRSERIES.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.05A; SOT23; SMD; ZMR
Mounting: SMD
Operating temperature: -50...125°C
Type of integrated circuit: voltage regulator
Voltage drop: 0.005V
Output voltage: 5V
Kind of package: reel; tape
Case: SOT23
Number of channels: 1
Kind of voltage regulator: fixed; linear
Manufacturer series: ZMR
Input voltage: 7...25V
Output current: 50mA
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ZRB500F03TA ZRB500F03TA DIODES INCORPORATED ZRB500F03TA.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±3%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±3%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 15mA
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B0520LW-7-F B0520LW-7-F DIODES INCORPORATED B0520LW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape; 410mW
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 170pF
Max. forward voltage: 0.385V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Power dissipation: 0.41W
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B0520LWQ-7-F B0520LWQ-7-F DIODES INCORPORATED B0520LW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape; 410mW
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 170pF
Max. forward voltage: 0.385V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Power dissipation: 0.41W
Application: automotive industry
Leakage current: 8mA
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DT1140-04LP-7 DIODES INCORPORATED DT1140-04LP.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 6A; 60W; unidirectional; ESD; U-DFN2510-10
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 6A
Peak pulse power dissipation: 60W
Version: ESD
Application: Ethernet; USB
Max. off-state voltage: 5.5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 50nA
Case: U-DFN2510-10
Capacitance: 0.5pF
Type of diode: TVS array
Number of channels: 4
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DT1140-04LPQ-7 DIODES INCORPORATED DT1140-04LPQ.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 6A; 60W; unidirectional; U-DFN2510-10; Ch: 4
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 6A
Peak pulse power dissipation: 60W
Application: automotive industry; Ethernet; USB
Max. off-state voltage: 5.5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 50nA
Case: U-DFN2510-10
Capacitance: 0.5pF
Type of diode: TVS array
Number of channels: 4
Produkt ist nicht verfügbar
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FZT1147ATA FZT1147ATA DIODES INCORPORATED FZT1147A.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 5A; 3W; SOT223
Mounting: SMD
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 12V
Power dissipation: 3W
Polarisation: bipolar
Pulsed collector current: 20A
Type of transistor: PNP
Current gain: 50...850
Kind of package: reel; tape
Case: SOT223
Frequency: 115MHz
Collector current: 5A
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AS358P-E1 AS358P-E1 DIODES INCORPORATED AS358-358A-358B.pdf Category: THT operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; DIP8; 100dB; 7mV; tube
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: THT
Voltage supply range: 3...36V DC
Case: DIP8
Operating temperature: -40...85°C
Open-loop gain: 100dB
Integrated circuit features: low power
Input offset voltage: 7mV
Kind of package: tube
Power dissipation: 0.83W
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SMBJ28CA-13-F SMBJ28CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMBJ28CAQ-13-F SMBJ28CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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BAT54CWQ-7-F BAT54CWQ-7-F DIODES INCORPORATED Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Application: automotive industry
Leakage current: 2µA
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BAT54WT-7 BAT54WT-7 DIODES INCORPORATED ds31396.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Reverse recovery time: 5ns
Power dissipation: 0.15W
Leakage current: 2µA
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BAV170T-7-F ds30258.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT523
Max. forward voltage: 1.1V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAV170Q-13-F BAV170.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Capacitance: 2pF
Features of semiconductor devices: small signal
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BAV170-7-F ds30234.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Features of semiconductor devices: small signal
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BAV170Q-7-F ds30234.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
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KBP304G KBP304G-KBP310G.pdf KBP3005G%20THRU%20KBP310G%20N1917%20REV.A.pdf kbp302g.pdf kbp302g.pdf
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 3A; Ifsm: 90A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 3A
Max. forward impulse current: 90A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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74LVC1G07W5-7 74LVC1G07.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 200µA
Manufacturer series: LVC
Kind of output: open drain
Kind of integrated circuit: buffer; non-inverting
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DMP4047LFDE-7 DMP4047LFDE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.9A; 0.7W; U-DFN2020-6
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.9A
On-state resistance: 50mΩ
Power dissipation: 0.7W
Gate-source voltage: ±20V
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DMP4047SK3-13 DMP4047SK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -18A; 1.6W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -18A
Power dissipation: 1.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMC4047LSD-13 DMC4047LSD-13.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.3W
Polarisation: unipolar
Drain current: 6.3/-6.3A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.024/0.04Ω
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DMP4047LFDEQ-7 DMP4047LFDEQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -36A
Drain current: -5.2A
Gate charge: 24.9nC
On-state resistance: 50mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
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DMP4047LFDEQ-13 DMP4047LFDEQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -36A
Drain current: -5.2A
Gate charge: 24.9nC
On-state resistance: 50mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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ZVN3310FTA ZVN3310F.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.1A; Idm: 2A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.1A
Pulsed drain current: 2A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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DMN10H220L-7 DMN10H220L.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN10H220LK3-13 DMN10H220LK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.7A; Idm: 30A; 7.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.7A
Pulsed drain current: 30A
Power dissipation: 7.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 1203 Stücke:
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BCX5210TA BCX51_52_53.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
Current gain: 63...160
Produkt ist nicht verfügbar
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BCP5610TA BCP54_55_56.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
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DMP2240UDM-7 ds31197.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; 0.6W; SOT26
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Power dissipation: 0.6W
Case: SOT26
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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MMBD4148-7-F BAS16-7-DTE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Max. load current: 0.3A
Capacitance: 2pF
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MMBD4148TW-7-F ds30154.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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MMBD4148PLM-7 MMBD4148PLM.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; U-DFN1616-6; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; fivefold
Case: U-DFN1616-6
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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S1MSWFMQ-7 S1MSWFMQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.2us; SOD123F; Ufmax: 1.1V
Application: automotive industry
Max. off-state voltage: 1kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Type of diode: rectifying
Reverse recovery time: 1.2µs
Mounting: SMD
Max. forward impulse current: 25A
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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DMP2066LDMQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SOT26
Pulsed drain current: -18A
Power dissipation: 1.25W
Gate charge: 10.1nC
Polarisation: unipolar
Drain current: -3.7A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: SOT26
On-state resistance: 70mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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DDTC143ZE-7-F ds30314.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Power dissipation: 0.15W
Current gain: 80
Frequency: 250MHz
Produkt ist nicht verfügbar
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74LVC125AT14-13 74LVC125A.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Manufacturer series: LVC
Operating temperature: -40...125°C
Quiescent current: 40µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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74LVC125AS14-13 74LVC125A.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 4; CMOS; SMD; SO14; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Kind of output: 3-state
Family: LVC
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DSS20200L-7 ds31604.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2A; 1.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT23
Pulsed collector current: 4A
Current gain: 150...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
auf Bestellung 2615 Stücke:
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PAM2841SR PAM2841.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 10÷40mA; MSOP8; SMD; Ch: 1
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 1
Case: MSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter; LED driver
Operating voltage: 2.8...5.5V DC
Output current: 10...40mA
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AZV393MMTR-G1 AZV393.pdf
Hersteller: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; SMT; MSOP8; reel,tape; 150nA
Type of integrated circuit: comparator
Case: MSOP8
Mounting: SMT
Input offset voltage: 9mV
Kind of output: open collector
Operating temperature: -40...85°C
Number of comparators: 2
Voltage supply range: 2.5...5.5V DC
Kind of package: reel; tape
Input offset current: 150nA
Kind of comparator: low-power
auf Bestellung 701 Stücke:
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Mindestbestellmenge: 3 Stücke
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SMAZ16-13-F SMAZx-13-F.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 357 Stücke:
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SB1100-T ds30116.pdf
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 0.8V; reel
Type of diode: Schottky rectifying
Case: DO41
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 80pF
Max. forward voltage: 0.8V
Max. forward impulse current: 25A
Kind of package: reel
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BZT52C18SQ-7-F BZT52CxxS_ser.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 1302 Stücke:
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DMT6016LSS-13 DMT6016LSS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.5A; Idm: 60A; 2.1W; SO8
Drain current: 9.5A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 28mΩ
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 2.1W
Gate charge: 17nC
Polarisation: unipolar
Produkt ist nicht verfügbar
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DMT6016LFDF-7 DMT6016LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 1.2W
Drain current: 8.9A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 27mΩ
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 1.2W
Gate charge: 17nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DMT6013LFDF-7 DMT6013LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 60A; 1.2W; U-DFN2020-6
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 21.5mΩ
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 1.2W
Gate charge: 15nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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S1G-13-F s1ab-s1mb.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 546 Stücke:
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RS1G-13-F ds15002.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMBF170-7-F MMBF170.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5.3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Produkt ist nicht verfügbar
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AP2210K-5.0TRG1 AP2210.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.3A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...13V
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AP2210K-ADJTRG1 AP2210.pdf
Hersteller: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12.7V; 0.3A
Mounting: SMD
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: AP2210
Input voltage: 2.5...13V
Output current: 0.3A
Type of integrated circuit: voltage regulator
Voltage drop: 0.5V
Operating temperature: -40...125°C
Output voltage: 1.25...12.7V
Kind of package: reel; tape
Case: SOT23-5
Number of channels: 1
Tolerance: ±2%
auf Bestellung 4179 Stücke:
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AP2210K-2.8TRG1 AP2210.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.3A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 2.8V
Output current: 0.3A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AP2210K-3.3TRE1 AP2210.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3.3V
Output current: 0.3A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AP2210K-2.5TRE1 AP2210.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 2.5V
Output current: 0.3A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AP2210K-2.5TRG1 AP2210.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 2.5V
Output current: 0.3A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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2DB1184Q-13 2DB1184Q.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 15W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Manufacturer standard package: 2500pcs.
Pulsed collector current: 4.5A
Frequency: 110MHz
Produkt ist nicht verfügbar
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AP63203QWU-7 AP63200Q_AP63201Q_AP63203Q_AP63205Q.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 3.3VDC; 2A; TSOT26; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 3.3V DC
Output current: 2A
Case: TSOT26
Mounting: SMD
Frequency: 1.1MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 93%
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PAM2320BECADJR PAM2320_June2021_Rev.4-2.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; PSOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 3A
Case: PSOP8
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Produkt ist nicht verfügbar
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BS107PSTZ BS107P.pdf
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.12A; 0.5W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.12A
Power dissipation: 0.5W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 23Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
auf Bestellung 1950 Stücke:
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BS107P BS107P.pdf
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.12A; 0.5W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.12A
Power dissipation: 0.5W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 23Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
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ZMR500FTA ZMRSERIES.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.05A; SOT23; SMD; ZMR
Mounting: SMD
Operating temperature: -50...125°C
Type of integrated circuit: voltage regulator
Voltage drop: 0.005V
Output voltage: 5V
Kind of package: reel; tape
Case: SOT23
Number of channels: 1
Kind of voltage regulator: fixed; linear
Manufacturer series: ZMR
Input voltage: 7...25V
Output current: 50mA
auf Bestellung 2955 Stücke:
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ZRB500F03TA ZRB500F03TA.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±3%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±3%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 15mA
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
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B0520LW-7-F B0520LW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape; 410mW
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 170pF
Max. forward voltage: 0.385V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Power dissipation: 0.41W
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
B0520LWQ-7-F B0520LW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape; 410mW
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 170pF
Max. forward voltage: 0.385V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Power dissipation: 0.41W
Application: automotive industry
Leakage current: 8mA
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
DT1140-04LP-7 DT1140-04LP.pdf
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 6A; 60W; unidirectional; ESD; U-DFN2510-10
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 6A
Peak pulse power dissipation: 60W
Version: ESD
Application: Ethernet; USB
Max. off-state voltage: 5.5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 50nA
Case: U-DFN2510-10
Capacitance: 0.5pF
Type of diode: TVS array
Number of channels: 4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DT1140-04LPQ-7 DT1140-04LPQ.pdf
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 6A; 60W; unidirectional; U-DFN2510-10; Ch: 4
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 6A
Peak pulse power dissipation: 60W
Application: automotive industry; Ethernet; USB
Max. off-state voltage: 5.5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 50nA
Case: U-DFN2510-10
Capacitance: 0.5pF
Type of diode: TVS array
Number of channels: 4
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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FZT1147ATA FZT1147A.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 5A; 3W; SOT223
Mounting: SMD
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 12V
Power dissipation: 3W
Polarisation: bipolar
Pulsed collector current: 20A
Type of transistor: PNP
Current gain: 50...850
Kind of package: reel; tape
Case: SOT223
Frequency: 115MHz
Collector current: 5A
Produkt ist nicht verfügbar
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AS358P-E1 AS358-358A-358B.pdf
Hersteller: DIODES INCORPORATED
Category: THT operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; DIP8; 100dB; 7mV; tube
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: THT
Voltage supply range: 3...36V DC
Case: DIP8
Operating temperature: -40...85°C
Open-loop gain: 100dB
Integrated circuit features: low power
Input offset voltage: 7mV
Kind of package: tube
Power dissipation: 0.83W
Produkt ist nicht verfügbar
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SMBJ28CA-13-F SMBJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SMBJ28CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BAT54CWQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Application: automotive industry
Leakage current: 2µA
Produkt ist nicht verfügbar
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BAT54WT-7 ds31396.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Reverse recovery time: 5ns
Power dissipation: 0.15W
Leakage current: 2µA
Produkt ist nicht verfügbar
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