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BZT52C3V9T-7 BZT52C3V9T-7 DIODES INCORPORATED BZT52CxxT_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
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SMBJ100A-13-F SMBJ100A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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291+0.3 EUR
334+0.25 EUR
516+0.17 EUR
650+0.13 EUR
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AP2114HA-1.2TRG1 AP2114HA-1.2TRG1 DIODES INCORPORATED AP2114.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2114HA-1.8TRG1 AP2114HA-1.8TRG1 DIODES INCORPORATED AP2114.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2114HA-2.5TRG1 AP2114HA-2.5TRG1 DIODES INCORPORATED AP2114.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 2.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AS78L05ZTR-E1 AS78L05ZTR-E1 DIODES INCORPORATED AS78Lxx_Aug2013_DS.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; TO92; THT; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: AS78LXX
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AS78L05ZTR-G1 AS78L05ZTR-G1 DIODES INCORPORATED AS78Lxx_Aug2013_DS.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; TO92; THT; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: AS78LXX
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DMMT2907A-7 DMMT2907A-7 DIODES INCORPORATED DMMT2907A.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 1.28W; SOT26
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.28W
Case: SOT26
Pulsed collector current: 1A
Current gain: 50...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 307MHz
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DMN6068SE-13 DMN6068SE-13 DIODES INCORPORATED DMN6068SE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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135+0.63 EUR
192+0.44 EUR
224+0.38 EUR
269+0.32 EUR
500+0.27 EUR
1000+0.25 EUR
2000+0.23 EUR
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74LVC1G125FS3-7 DIODES INCORPORATED 74LVC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN0808-4; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN0808-4
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Family: LVC
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AP1534SG-13 AP1534SG-13 DIODES INCORPORATED AP1534x-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.4÷18VDC; Uout: 0.8÷18VDC; 2A; SOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.4...18V DC
Output voltage: 0.8...18V DC
Output current: 2A
Case: SOP8
Mounting: SMD
Frequency: 300kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 91%
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122+0.7 EUR
135+0.63 EUR
143+0.6 EUR
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DMP2200UFCL-7 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -8A; 1.58W
Case: U-DFN1616-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Pulsed drain current: -8A
Power dissipation: 1.58W
Gate charge: 2.2nC
Polarisation: unipolar
Drain current: -1.2A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 0.65Ω
Produkt ist nicht verfügbar
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SMBJ36CA-13-F SMBJ36CA-13-F DIODES INCORPORATED ds19002.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMBJ36CAQ-13-F SMBJ36CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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SMAJ16CA-13-F SMAJ16CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 3649 Stücke:
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334+0.25 EUR
500+0.17 EUR
575+0.14 EUR
715+0.12 EUR
758+0.11 EUR
1000+0.11 EUR
2000+0.1 EUR
2500+0.1 EUR
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SMAJ16CAQ-13-F SMAJ16CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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SMCJ58A-13-F SMCJ58A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ58AQ-13-F SMCJ58AQ-13-F DIODES INCORPORATED Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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PAM8303CBSC DIODES INCORPORATED PAM8303C.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1
Mounting: SMD
Output power: 3W
Type of integrated circuit: audio amplifier
Operating temperature: -40...85°C
Integrated circuit features: low noise; thermal protection
Voltage supply range: 2.8...5.5V DC
Amplifier class: D
Kind of package: reel; tape
Case: MSOP8
Number of channels: 1
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PAM8303DBSC DIODES INCORPORATED PAM8303D.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; thermal protection; Ch: 1; MSOP8
Mounting: SMD
Output power: 3W
Type of integrated circuit: audio amplifier
Operating temperature: -40...85°C
Integrated circuit features: thermal protection
Voltage supply range: 2.8...5.5V DC
Amplifier class: D
Kind of package: reel; tape
Case: MSOP8
Number of channels: 1
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PAM8303DBYC DIODES INCORPORATED PAM8303D.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; thermal protection; Ch: 1
Mounting: SMD
Output power: 3W
Type of integrated circuit: audio amplifier
Operating temperature: -40...85°C
Integrated circuit features: thermal protection
Voltage supply range: 2.8...5.5V DC
Amplifier class: D
Kind of package: reel; tape
Case: U-DFN3030-8
Number of channels: 1
Produkt ist nicht verfügbar
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ZR431F01TA ZR431F01TA DIODES INCORPORATED ZR431F.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
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208+0.4 EUR
233+0.37 EUR
266+0.32 EUR
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AS431AZTR-G1 AS431AZTR-G1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; TO92; Ammo Pack,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: Ammo Pack; tape
Maximum output current: 0.1A
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500+0.17 EUR
676+0.13 EUR
782+0.11 EUR
940+0.09 EUR
1177+0.073 EUR
1263+0.068 EUR
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PDS5100-13 DIODES INCORPORATED ds30483.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Leakage current: 5mA
Max. forward impulse current: 120A
Kind of package: reel; tape
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PDS5100H-13 DIODES INCORPORATED ds30471.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
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PDS5100HQ-13 DIODES INCORPORATED ds30471.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Application: automotive industry
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PDS5100HQ-13D DIODES INCORPORATED ds30471.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Application: automotive industry
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PDS5100Q-13D DIODES INCORPORATED PDS5100Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Application: automotive industry
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BZX84C6V8-7-F BZX84C6V8-7-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.8V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
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AZ23C6V8-7-F AZ23C6V8-7-F DIODES INCORPORATED AZ23C_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
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MBRB10100CT-13 MBRB10100CT-13 DIODES INCORPORATED MBRB10100CT_Rev.5-2_Apr2016.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: TO263AB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Kind of package: reel; tape
Leakage current: 10mA
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50+1.7 EUR
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MBRD10100CT-13 MBRD10100CT-13 DIODES INCORPORATED MBRD10100CT.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Leakage current: 10mA
Max. forward impulse current: 110A
Kind of package: reel; tape
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MBRB10100CT MBRB10100CT DIODES INCORPORATED MBR1080(90)(100)CT(-1)%20MBRB1080(90)(100)CT%20N0735%20REV.A.pdf MBRB10100CT_Rev.5-2_Apr2016.pdf littelfuse-power-semiconductors-mbrb10100ct-datasheet?assetguid=bdc9b704-92cf-4d62-bc26-27f68c81efc4 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Kind of package: tube
Leakage current: 10mA
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B140HW-7 B140HW-7 DIODES INCORPORATED B140HW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 16A
Max. forward voltage: 0.51V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Type of diode: Schottky rectifying
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B140B-13-F B140B-13-F DIODES INCORPORATED b120-160b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Capacitance: 0.11nF
Type of diode: Schottky rectifying
auf Bestellung 20 Stücke:
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B140HB-13-F B140HB-13-F DIODES INCORPORATED B140HB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 45A
Max. forward voltage: 0.49V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Capacitance: 80pF
Type of diode: Schottky rectifying
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DDZ9678-7 DDZ9678-7 DIODES INCORPORATED DDZ9689-7.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 1.8V; SMD; SOD123; single diode; reel,tape
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Type of diode: Zener
Power dissipation: 0.5W
Semiconductor structure: single diode
Zener voltage: 1.8V
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AP7354D-18W5-7 AP7354D-18W5-7 DIODES INCORPORATED AP7354.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 1.8V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7354
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...5.5V
Integrated circuit features: output discharge; shutdown mode control input
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AS358MTR-G1 AS358MTR-G1 DIODES INCORPORATED AS358-358A-358B.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; SO8; 100dB; 2mV; 550mW
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 2mV
Kind of package: reel; tape
Power dissipation: 0.55W
Voltage supply range: 3...36V DC
Open-loop gain: 100dB
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727+0.12 EUR
890+0.095 EUR
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FMMT617 FMMT617 DIODES INCORPORATED FMMT617.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Quantity in set/package: 3000pcs.
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FMMT617TA FMMT617TA DIODES INCORPORATED FMMT617.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Manufacturer standard package: 3000pcs.
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269+0.32 EUR
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GBJ1506-F GBJ1506-F DIODES INCORPORATED GBJ15_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 0.24kA
Version: flat
Case: GBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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46+1.87 EUR
75+1.54 EUR
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DDTC143ZCA-7-F DDTC143ZCA-7-F DIODES INCORPORATED ds30330.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
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DDTC143ZUA-7-FDDTC143ZUA-7-F
DDTC143ZUA-7-FDDTC143ZUA-7-F
 DDTC143ZUA-7-F DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
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BCV47TA BCV47TA DIODES INCORPORATED bcv27%2C47.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 500mA; 330mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.8A
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BCV47QTC DIODES INCORPORATED BCV47Q.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Application: automotive industry
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BCV47QTA BCV47QTA DIODES INCORPORATED BCV47Q.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 310mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Current gain: 2k
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.8A
Application: automotive industry
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BCV47TC BCV47TC DIODES INCORPORATED bcv27%2C47.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 500mA; 330mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Kind of package: reel; tape
Manufacturer standard package: 10000pcs.
Pulsed collector current: 0.8A
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SMAJ26A-13-F SMAJ26A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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209+0.4 EUR
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527+0.17 EUR
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SMAJ26AQ-13-F SMAJ26AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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P6SMAJ26ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DMN2230U-7 DMN2230U-7 DIODES INCORPORATED DMN2230U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 710 Stücke:
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435+0.2 EUR
490+0.18 EUR
530+0.17 EUR
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SMBJ16CA-13-F SMBJ16CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷20.5V; 23.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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250+0.35 EUR
309+0.27 EUR
348+0.25 EUR
511+0.17 EUR
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AP5724FDCG-7 DIODES INCORPORATED AP5724.pdf Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 40mA; U-DFN2020-6; SMD
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Output current: 40mA
Case: U-DFN2020-6
Mounting: SMD
Frequency: 1...1.4MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Integrated circuit features: PWM; soft-start function; UVLO (UnderVoltage LockOut)
Operating voltage: 2.7...5.5V DC
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DMG3406L-7 DMG3406L-7 DIODES INCORPORATED DMG3406L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 1.4W
Polarisation: unipolar
Drain current: 2.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
On-state resistance: 70mΩ
auf Bestellung 3157 Stücke:
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193+0.44 EUR
272+0.31 EUR
397+0.21 EUR
469+0.18 EUR
673+0.13 EUR
1000+0.11 EUR
3000+0.092 EUR
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DMG3404L-7 DMG3404L-7 DIODES INCORPORATED DMG3404L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 1.33W
Polarisation: unipolar
Drain current: 4.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
On-state resistance: 35mΩ
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DMG3406L-13 DMG3406L-13 DIODES INCORPORATED DMG3406L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 1.4W
Polarisation: unipolar
Drain current: 2.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
On-state resistance: 70mΩ
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DMG3402LQ-7 DMG3402LQ-7 DIODES INCORPORATED DMG3402LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 1.4W
Gate charge: 11.7nC
Polarisation: unipolar
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
On-state resistance: 85mΩ
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DMG3401LSNQ-7 DIODES INCORPORATED DMG3401LSNQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Pulsed drain current: -30A
Power dissipation: 1.2W
Gate charge: 25.1nC
Polarisation: unipolar
Drain current: -2.9A
Kind of channel: enhancement
Drain-source voltage: -30V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
On-state resistance: 85mΩ
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DMG3401LSN-7 DIODES INCORPORATED DMG3401LSN.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Pulsed drain current: -30A
Power dissipation: 1.2W
Gate charge: 25.1nC
Polarisation: unipolar
Drain current: -2.9A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
On-state resistance: 85mΩ
Produkt ist nicht verfügbar
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BZT52C3V9T-7 BZT52CxxT_ser.pdf
BZT52C3V9T-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
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SMBJ100A-13-F SMBJ_ser.pdf
SMBJ100A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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239+0.36 EUR
291+0.3 EUR
334+0.25 EUR
516+0.17 EUR
650+0.13 EUR
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AP2114HA-1.2TRG1 AP2114.pdf
AP2114HA-1.2TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2114HA-1.8TRG1 AP2114.pdf
AP2114HA-1.8TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
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AP2114HA-2.5TRG1 AP2114.pdf
AP2114HA-2.5TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 2.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
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AS78L05ZTR-E1 AS78Lxx_Aug2013_DS.pdf
AS78L05ZTR-E1
Hersteller: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; TO92; THT; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: AS78LXX
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AS78L05ZTR-G1 AS78Lxx_Aug2013_DS.pdf
AS78L05ZTR-G1
Hersteller: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; TO92; THT; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: AS78LXX
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DMMT2907A-7 DMMT2907A.pdf
DMMT2907A-7
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 1.28W; SOT26
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.28W
Case: SOT26
Pulsed collector current: 1A
Current gain: 50...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 307MHz
Produkt ist nicht verfügbar
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DMN6068SE-13 DMN6068SE.pdf
DMN6068SE-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 4083 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
99+0.87 EUR
135+0.63 EUR
192+0.44 EUR
224+0.38 EUR
269+0.32 EUR
500+0.27 EUR
1000+0.25 EUR
2000+0.23 EUR
Mindestbestellmenge: 99 Stücke
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74LVC1G125FS3-7 74LVC1G125.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN0808-4; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN0808-4
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Family: LVC
Produkt ist nicht verfügbar
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AP1534SG-13 AP1534x-DTE.pdf
AP1534SG-13
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.4÷18VDC; Uout: 0.8÷18VDC; 2A; SOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.4...18V DC
Output voltage: 0.8...18V DC
Output current: 2A
Case: SOP8
Mounting: SMD
Frequency: 300kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 91%
auf Bestellung 2445 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
87+0.99 EUR
122+0.7 EUR
135+0.63 EUR
143+0.6 EUR
Mindestbestellmenge: 87 Stücke
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DMP2200UFCL-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -8A; 1.58W
Case: U-DFN1616-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Pulsed drain current: -8A
Power dissipation: 1.58W
Gate charge: 2.2nC
Polarisation: unipolar
Drain current: -1.2A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 0.65Ω
Produkt ist nicht verfügbar
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SMBJ36CA-13-F ds19002.pdf
SMBJ36CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMBJ36CAQ-13-F ds40740.pdf
SMBJ36CAQ-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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SMAJ16CA-13-F SMAJ_ser.pdf
SMAJ16CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 3649 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
334+0.25 EUR
500+0.17 EUR
575+0.14 EUR
715+0.12 EUR
758+0.11 EUR
1000+0.11 EUR
2000+0.1 EUR
2500+0.1 EUR
Mindestbestellmenge: 334 Stücke
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SMAJ16CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ16CAQ-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMCJ58A-13-F SMCJ_ser.pdf
SMCJ58A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMCJ58AQ-13-F
SMCJ58AQ-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8303CBSC PAM8303C.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1
Mounting: SMD
Output power: 3W
Type of integrated circuit: audio amplifier
Operating temperature: -40...85°C
Integrated circuit features: low noise; thermal protection
Voltage supply range: 2.8...5.5V DC
Amplifier class: D
Kind of package: reel; tape
Case: MSOP8
Number of channels: 1
Produkt ist nicht verfügbar
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PAM8303DBSC PAM8303D.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; thermal protection; Ch: 1; MSOP8
Mounting: SMD
Output power: 3W
Type of integrated circuit: audio amplifier
Operating temperature: -40...85°C
Integrated circuit features: thermal protection
Voltage supply range: 2.8...5.5V DC
Amplifier class: D
Kind of package: reel; tape
Case: MSOP8
Number of channels: 1
Produkt ist nicht verfügbar
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PAM8303DBYC PAM8303D.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; thermal protection; Ch: 1
Mounting: SMD
Output power: 3W
Type of integrated circuit: audio amplifier
Operating temperature: -40...85°C
Integrated circuit features: thermal protection
Voltage supply range: 2.8...5.5V DC
Amplifier class: D
Kind of package: reel; tape
Case: U-DFN3030-8
Number of channels: 1
Produkt ist nicht verfügbar
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ZR431F01TA ZR431F.pdf
ZR431F01TA
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 3553 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
148+0.58 EUR
208+0.4 EUR
233+0.37 EUR
266+0.32 EUR
Mindestbestellmenge: 148 Stücke
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AS431AZTR-G1 AS431.pdf
AS431AZTR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; TO92; Ammo Pack,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: Ammo Pack; tape
Maximum output current: 0.1A
auf Bestellung 1983 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
500+0.17 EUR
676+0.13 EUR
782+0.11 EUR
940+0.09 EUR
1177+0.073 EUR
1263+0.068 EUR
Mindestbestellmenge: 500 Stücke
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PDS5100-13 ds30483.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Leakage current: 5mA
Max. forward impulse current: 120A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PDS5100H-13 ds30471.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDS5100HQ-13 ds30471.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDS5100HQ-13D ds30471.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDS5100Q-13D PDS5100Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BZX84C6V8-7-F BZX84Cxx_SER.pdf
BZX84C6V8-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.8V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
32+2.65 EUR
Mindestbestellmenge: 32 Stücke
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AZ23C6V8-7-F AZ23C_ser.pdf
AZ23C6V8-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MBRB10100CT-13 MBRB10100CT_Rev.5-2_Apr2016.pdf
MBRB10100CT-13
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: TO263AB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Kind of package: reel; tape
Leakage current: 10mA
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
50+1.7 EUR
Mindestbestellmenge: 50 Stücke
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MBRD10100CT-13 MBRD10100CT.pdf
MBRD10100CT-13
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Leakage current: 10mA
Max. forward impulse current: 110A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MBRB10100CT MBR1080(90)(100)CT(-1)%20MBRB1080(90)(100)CT%20N0735%20REV.A.pdf MBRB10100CT_Rev.5-2_Apr2016.pdf littelfuse-power-semiconductors-mbrb10100ct-datasheet?assetguid=bdc9b704-92cf-4d62-bc26-27f68c81efc4
MBRB10100CT
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Kind of package: tube
Leakage current: 10mA
Produkt ist nicht verfügbar
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B140HW-7 B140HW.pdf
B140HW-7
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 16A
Max. forward voltage: 0.51V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B140B-13-F b120-160b.pdf
B140B-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Capacitance: 0.11nF
Type of diode: Schottky rectifying
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
20+4.26 EUR
Mindestbestellmenge: 20 Stücke
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B140HB-13-F B140HB.pdf
B140HB-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 45A
Max. forward voltage: 0.49V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Capacitance: 80pF
Type of diode: Schottky rectifying
auf Bestellung 1926 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
152+0.56 EUR
262+0.32 EUR
309+0.27 EUR
404+0.21 EUR
424+0.2 EUR
550+0.15 EUR
Mindestbestellmenge: 152 Stücke
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DDZ9678-7 DDZ9689-7.pdf
DDZ9678-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 1.8V; SMD; SOD123; single diode; reel,tape
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Type of diode: Zener
Power dissipation: 0.5W
Semiconductor structure: single diode
Zener voltage: 1.8V
auf Bestellung 4330 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
264+0.32 EUR
385+0.23 EUR
562+0.15 EUR
3000+0.055 EUR
Mindestbestellmenge: 264 Stücke
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AP7354D-18W5-7 AP7354.pdf
AP7354D-18W5-7
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 1.8V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7354
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...5.5V
Integrated circuit features: output discharge; shutdown mode control input
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
167+0.51 EUR
232+0.37 EUR
258+0.33 EUR
298+0.29 EUR
319+0.26 EUR
500+0.25 EUR
1000+0.24 EUR
3000+0.23 EUR
Mindestbestellmenge: 167 Stücke
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AS358MTR-G1 AS358-358A-358B.pdf
AS358MTR-G1
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; SO8; 100dB; 2mV; 550mW
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 2mV
Kind of package: reel; tape
Power dissipation: 0.55W
Voltage supply range: 3...36V DC
Open-loop gain: 100dB
auf Bestellung 1821 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
455+0.19 EUR
633+0.13 EUR
727+0.12 EUR
890+0.095 EUR
999+0.086 EUR
1085+0.079 EUR
1161+0.074 EUR
Mindestbestellmenge: 455 Stücke
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FMMT617 FMMT617.pdf
FMMT617
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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FMMT617TA FMMT617.pdf
FMMT617TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Manufacturer standard package: 3000pcs.
auf Bestellung 2974 Stücke:
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109+0.79 EUR
205+0.42 EUR
248+0.35 EUR
269+0.32 EUR
283+0.3 EUR
500+0.26 EUR
750+0.25 EUR
1000+0.24 EUR
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GBJ1506-F GBJ15_ser.pdf
GBJ1506-F
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 0.24kA
Version: flat
Case: GBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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25+3.42 EUR
44+1.98 EUR
46+1.87 EUR
75+1.54 EUR
105+1.48 EUR
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DDTC143ZCA-7-F ds30330.pdf
DDTC143ZCA-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
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DDTC143ZUA-7-F
DDTC143ZUA-7-FDDTC143ZUA-7-F
DDTC143ZUA-7-FDDTC143ZUA-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
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59+1.45 EUR
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BCV47TA bcv27%2C47.pdf
BCV47TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 500mA; 330mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.8A
Produkt ist nicht verfügbar
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BCV47QTC BCV47Q.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Application: automotive industry
Produkt ist nicht verfügbar
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BCV47QTA BCV47Q.pdf
BCV47QTA
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 310mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Current gain: 2k
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.8A
Application: automotive industry
Produkt ist nicht verfügbar
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BCV47TC bcv27%2C47.pdf
BCV47TC
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 500mA; 330mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Kind of package: reel; tape
Manufacturer standard package: 10000pcs.
Pulsed collector current: 0.8A
Produkt ist nicht verfügbar
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SMAJ26A-13-F SMAJ_ser.pdf
SMAJ26A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 1001 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
209+0.4 EUR
291+0.3 EUR
334+0.25 EUR
527+0.17 EUR
705+0.12 EUR
1000+0.11 EUR
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SMAJ26AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ26AQ-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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P6SMAJ26ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DMN2230U-7 DMN2230U.pdf
DMN2230U-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 710 Stücke:
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350+0.25 EUR
435+0.2 EUR
490+0.18 EUR
530+0.17 EUR
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SMBJ16CA-13-F SMBJ_ser.pdf
SMBJ16CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷20.5V; 23.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 651 Stücke:
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250+0.35 EUR
309+0.27 EUR
348+0.25 EUR
511+0.17 EUR
650+0.13 EUR
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AP5724FDCG-7 AP5724.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 40mA; U-DFN2020-6; SMD
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Output current: 40mA
Case: U-DFN2020-6
Mounting: SMD
Frequency: 1...1.4MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Integrated circuit features: PWM; soft-start function; UVLO (UnderVoltage LockOut)
Operating voltage: 2.7...5.5V DC
Produkt ist nicht verfügbar
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DMG3406L-7 DMG3406L.pdf
DMG3406L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 1.4W
Polarisation: unipolar
Drain current: 2.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
On-state resistance: 70mΩ
auf Bestellung 3157 Stücke:
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AnzahlPrivatkunde
193+0.44 EUR
272+0.31 EUR
397+0.21 EUR
469+0.18 EUR
673+0.13 EUR
1000+0.11 EUR
3000+0.092 EUR
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DMG3404L-7 DMG3404L.pdf
DMG3404L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 1.33W
Polarisation: unipolar
Drain current: 4.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
On-state resistance: 35mΩ
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34+2.5 EUR
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DMG3406L-13 DMG3406L.pdf
DMG3406L-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 1.4W
Polarisation: unipolar
Drain current: 2.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
On-state resistance: 70mΩ
Produkt ist nicht verfügbar
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DMG3402LQ-7 DMG3402LQ.pdf
DMG3402LQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 1.4W
Gate charge: 11.7nC
Polarisation: unipolar
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
On-state resistance: 85mΩ
Produkt ist nicht verfügbar
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DMG3401LSNQ-7 DMG3401LSNQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Pulsed drain current: -30A
Power dissipation: 1.2W
Gate charge: 25.1nC
Polarisation: unipolar
Drain current: -2.9A
Kind of channel: enhancement
Drain-source voltage: -30V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
On-state resistance: 85mΩ
Produkt ist nicht verfügbar
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DMG3401LSN-7 DMG3401LSN.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Pulsed drain current: -30A
Power dissipation: 1.2W
Gate charge: 25.1nC
Polarisation: unipolar
Drain current: -2.9A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
On-state resistance: 85mΩ
Produkt ist nicht verfügbar
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