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DESD5V0U1BA-7 DESD5V0U1BA-7 DIODES INCORPORATED DESD5V0U1BA.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5÷9.5V; 3A; bidirectional; SOD323; reel,tape; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Number of channels: 1
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BAS40-05T-7-F BAS40-05T-7-F DIODES INCORPORATED BAS40T_-04T_-05T_-06T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT523; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Reverse recovery time: 5ns
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BAS40-05Q-13-F BAS40-05Q-13-F DIODES INCORPORATED Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.35W
Reverse recovery time: 5ns
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BAS40-05Q-7-F BAS40-05Q-7-F DIODES INCORPORATED BAS40_-04_-05_-06.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.35W
Reverse recovery time: 5ns
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FZT688BTA FZT688BTA DIODES INCORPORATED FZT688.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 4A; 3W; SOT223
Polarisation: bipolar
Case: SOT223
Mounting: SMD
Type of transistor: NPN
Power dissipation: 3W
Collector current: 4A
Collector-emitter voltage: 12V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Kind of package: reel; tape
auf Bestellung 225 Stücke:
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98+0.73 EUR
150+0.48 EUR
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DMG3402L-7 DMG3402L-7 DIODES INCORPORATED DMG3402L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Polarisation: unipolar
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Power dissipation: 1.4W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
auf Bestellung 1991 Stücke:
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455+0.16 EUR
500+0.14 EUR
544+0.13 EUR
662+0.11 EUR
707+0.1 EUR
790+0.091 EUR
1000+0.087 EUR
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DMN3065LW-7 DMN3065LW-7 DIODES INCORPORATED DMN3065LW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Polarisation: unipolar
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Power dissipation: 0.77W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
auf Bestellung 2518 Stücke:
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152+0.47 EUR
209+0.34 EUR
304+0.24 EUR
355+0.2 EUR
506+0.14 EUR
1000+0.12 EUR
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PAM8302AADCR PAM8302AADCR DIODES INCORPORATED PAM8302A.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Type of integrated circuit: audio amplifier
Output power: 2.5W
Integrated circuit features: low noise; thermal protection
Mounting: SMD
Number of channels: 1
Amplifier class: D
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Voltage supply range: 2...5.5V DC
auf Bestellung 1059 Stücke:
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129+0.56 EUR
185+0.39 EUR
203+0.35 EUR
230+0.31 EUR
250+0.3 EUR
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PAM8302AASCR DIODES INCORPORATED PAM8302A.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Type of integrated circuit: audio amplifier
Output power: 2.5W
Integrated circuit features: low noise; thermal protection
Mounting: SMD
Number of channels: 1
Amplifier class: D
Case: MSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Voltage supply range: 2...5.5V DC
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PAM8302AAYCR DIODES INCORPORATED PAM8302A.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Type of integrated circuit: audio amplifier
Output power: 2.5W
Integrated circuit features: low noise; thermal protection
Mounting: SMD
Number of channels: 1
Amplifier class: D
Case: U-DFN3030-8
Operating temperature: -40...85°C
Kind of package: reel; tape
Voltage supply range: 2...5.5V DC
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ZVN2106A ZVN2106A DIODES INCORPORATED ZVN2106A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.45A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.45A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
auf Bestellung 468 Stücke:
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69+1.04 EUR
120+0.6 EUR
151+0.48 EUR
167+0.43 EUR
200+0.41 EUR
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ZVN2106ASTZ ZVN2106ASTZ DIODES INCORPORATED ZVN2106A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.45A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.45A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
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102+0.7 EUR
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250+0.42 EUR
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ZVN2110A ZVN2110A DIODES INCORPORATED ZVN2110A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.32A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.32A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
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ZVN2110ASTZ DIODES INCORPORATED ZVN2110A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.32A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.32A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
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SMCJ30A-13-F SMCJ30A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 31A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 139 Stücke:
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136+0.53 EUR
139+0.51 EUR
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DF01S-T DF01S-T DIODES INCORPORATED DF005_10S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 1264 Stücke:
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117+0.61 EUR
175+0.41 EUR
300+0.24 EUR
500+0.17 EUR
1000+0.15 EUR
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BZT52C4V7S-7-F BZT52C4V7S-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 1205 Stücke:
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500+0.14 EUR
596+0.12 EUR
705+0.1 EUR
1205+0.059 EUR
Mindestbestellmenge: 500
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BZT52C4V7T-7 BZT52C4V7T-7 DIODES INCORPORATED BZT52CxxT_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
auf Bestellung 3172 Stücke:
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625+0.11 EUR
758+0.094 EUR
863+0.083 EUR
1511+0.047 EUR
2223+0.032 EUR
2488+0.029 EUR
Mindestbestellmenge: 625
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BZT52C4V7Q-7-F BZT52C4V7Q-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 4.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
auf Bestellung 1340 Stücke:
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625+0.11 EUR
770+0.093 EUR
953+0.075 EUR
1340+0.053 EUR
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BZT52C4V7LP-7 BZT52C4V7LP-7 DIODES INCORPORATED BZT52CxxLP_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 4.7V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
auf Bestellung 466 Stücke:
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334+0.21 EUR
466+0.16 EUR
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BZT52C4V7SQ-7-F BZT52C4V7SQ-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
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BZT52C4V7TQ-7-F DIODES INCORPORATED ds30502.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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ZSR500GTA ZSR500GTA DIODES INCORPORATED DS_31_ZSR%20Series.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.2A; SOT223; SMD; ZSR
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.2A
Case: SOT223
Mounting: SMD
Manufacturer series: ZSR
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 7...20V
auf Bestellung 615 Stücke:
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65+1.1 EUR
78+0.92 EUR
87+0.83 EUR
99+0.72 EUR
108+0.66 EUR
116+0.62 EUR
250+0.58 EUR
Mindestbestellmenge: 65
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DMT6012LPSW-13 DIODES INCORPORATED DMT6012LPSW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.5A; Idm: 120A; 3.1W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 17mΩ
Power dissipation: 3.1W
Drain current: 10.5A
Gate-source voltage: ±20V
Pulsed drain current: 120A
Drain-source voltage: 60V
Kind of channel: enhancement
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SMAZ18-13-F SMAZ18-13-F DIODES INCORPORATED SMAZx-13-F.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 3650 Stücke:
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209+0.34 EUR
269+0.27 EUR
305+0.23 EUR
417+0.17 EUR
477+0.15 EUR
610+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 209
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ZXT13P20DE6TA DIODES INCORPORATED ZXT13P20DE6.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 4A; 1.7W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4A
Power dissipation: 1.7W
Case: SOT23
Current gain: 300
Mounting: SMD
auf Bestellung 3000 Stücke:
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3000+0.4 EUR
Mindestbestellmenge: 3000
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SMAJ12A-13-F SMAJ12A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2340 Stücke:
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295+0.24 EUR
353+0.2 EUR
424+0.17 EUR
903+0.079 EUR
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SMAJ12AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P4SMAJ12ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 12.2÷13.5V; 20.1A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMAJ12ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DDTA124ECA-7-F DDTA124ECA-7-F DIODES INCORPORATED ds30333.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.2W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
auf Bestellung 5900 Stücke:
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358+0.2 EUR
550+0.13 EUR
903+0.079 EUR
1250+0.057 EUR
1421+0.05 EUR
3000+0.041 EUR
Mindestbestellmenge: 358
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ADTA124ECAQ-13 DIODES INCORPORATED ADTA124ECAQ.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Power dissipation: 0.31W
Frequency: 250MHz
Quantity in set/package: 10000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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DDTA124EE-7-F DIODES INCORPORATED ds30317.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.15W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
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DDTA124EUA-7-F DIODES INCORPORATED ds30325.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.2W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
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DDTB114EC-7-F DIODES INCORPORATED DDTB_XXXX_C.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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AS7808AT-E1 DIODES INCORPORATED AS78XXA.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 1A; TO220-3; THT; AS78XXA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 8V
Output current: 1A
Case: TO220-3
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 10.6...23V
Manufacturer series: AS78XXA
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DMPH6050SK3-13 DMPH6050SK3-13 DIODES INCORPORATED DMPH6050SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: TO252
Drain-source voltage: -60V
Pulsed drain current: -40A
Drain current: -6A
Gate charge: 25nC
On-state resistance: 70mΩ
Power dissipation: 3.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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134+0.54 EUR
157+0.46 EUR
500+0.34 EUR
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AP3125BKTR-G1 AP3125BKTR-G1 DIODES INCORPORATED AP3125B.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 20÷70kHz; Ch: 1; SOT26; flyback
Application: SMPS
Case: SOT26
Type of integrated circuit: PMIC
Topology: flyback
Mounting: SMD
Operating temperature: -20...125°C
Duty cycle factor: 0...80%
Output current: 0.35A
Number of channels: 1
Supply voltage: 10...25V
Frequency: 20...70kHz
Kind of integrated circuit: PWM controller
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BSS138K-7 DIODES INCORPORATED BSS138K.pdf Category: Transistors - Unclassified
Description: BSS138K-7
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Lieferzeit 14-21 Tag (e)
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SMCJ170A-13-F SMCJ170A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1489 Stücke:
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BAS21-7-F BAS21-7-F DIODES INCORPORATED BAS19_20_21.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Max. load current: 0.4A
Features of semiconductor devices: small signal
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BAS21DWA-7 BAS21DWA-7 DIODES INCORPORATED BAS21DWA.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT353; Ufmax: 1.3V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Capacitance: 0.7pF
Case: SOT353
Max. forward voltage: 1.3V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 2390 Stücke:
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455+0.16 EUR
642+0.11 EUR
926+0.077 EUR
1053+0.068 EUR
1330+0.054 EUR
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BAS21Q-13-F BAS21Q-13-F DIODES INCORPORATED Ds12004.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.4A
Features of semiconductor devices: small signal
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BAS21TWQ-7 DIODES INCORPORATED BAS21TWQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAS21WQ-7-F DIODES INCORPORATED BAS21WQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAS21TM-7 DIODES INCORPORATED BAS21TM.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; SOT26; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SOT26
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS21TMQ-13 DIODES INCORPORATED BAS21TM.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; SOT26; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SOT26
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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DMT10H015SK3-13 DMT10H015SK3-13 DIODES INCORPORATED DMT10H015SK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 215A; 2.9W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Pulsed drain current: 215A
Power dissipation: 2.9W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 30.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2462 Stücke:
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63+1.14 EUR
83+0.87 EUR
95+0.76 EUR
112+0.64 EUR
500+0.53 EUR
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AP5724WUG-7 AP5724WUG-7 DIODES INCORPORATED AP5724.pdf Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 40mA; TSOT26; SMD; 1÷1.4MHz
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Case: TSOT26
Mounting: SMD
Topology: boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Integrated circuit features: PWM; soft-start function; UVLO (UnderVoltage LockOut)
Operating voltage: 2.7...5.5V DC
Frequency: 1...1.4MHz
Output current: 40mA
auf Bestellung 2287 Stücke:
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156+0.46 EUR
197+0.36 EUR
250+0.35 EUR
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SMCJ36AQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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HBS410-13 DIODES INCORPORATED HBS410.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 4A; Ifsm: 120A; HBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 120A
Case: HBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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TT410-13 DIODES INCORPORATED TT410.pdf Category: Bridge rectifiers - Unclassified
Description: TT410-13
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DMG7430LFG-7 DMG7430LFG-7 DIODES INCORPORATED DMG7430LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.2A; 0.9W; PowerDI®3333-8
Kind of package: 7 inch reel; tape
Case: PowerDI®3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 15mΩ
Power dissipation: 0.9W
Drain current: 9.2A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Polarisation: unipolar
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155+0.46 EUR
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QSBT40-7-F DIODES INCORPORATED ds30195.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT363; Ch: 4; reel,tape
Type of diode: TVS array
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Semiconductor structure: unidirectional
Kind of package: reel; tape
Number of channels: 4
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2N7002T-7-F 2N7002T-7-F DIODES INCORPORATED 2N7002T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.15W; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 3070 Stücke:
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295+0.24 EUR
421+0.17 EUR
625+0.11 EUR
746+0.096 EUR
1099+0.065 EUR
1276+0.056 EUR
3000+0.05 EUR
Mindestbestellmenge: 295
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FMMT618TA DIODES INCORPORATED FMMT618.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 6A
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 140MHz
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FMMT618QTA FMMT618QTA DIODES INCORPORATED FMMT618.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 6A
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Application: automotive industry
auf Bestellung 755 Stücke:
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142+0.51 EUR
226+0.32 EUR
500+0.24 EUR
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FMMT618TA DIODES INCORPORATED FMMT618.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 6A
Current gain: 100...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...140MHz
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ZXSC310E5TA DIODES INCORPORATED ZXSC310.pdf Category: LED drivers
Description: Driver; DC/DC converter,LED driver; SOT23-5; SMD; 200kHz; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Case: SOT23-5
Mounting: SMD
Frequency: 200kHz
Topology: boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 800mV DC...8V DC
Efficiency: 94%
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MMDT2227Q-7-F MMDT2227Q-7-F DIODES INCORPORATED MMDT2227Q.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40/60V; 0.6A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40/60V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Current gain: 35...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
auf Bestellung 2968 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
271+0.26 EUR
480+0.15 EUR
685+0.1 EUR
1000+0.092 EUR
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DESD5V0U1BA-7 DESD5V0U1BA.pdf
DESD5V0U1BA-7
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5÷9.5V; 3A; bidirectional; SOD323; reel,tape; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Number of channels: 1
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BAS40-05T-7-F BAS40T_-04T_-05T_-06T.pdf
BAS40-05T-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT523; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Reverse recovery time: 5ns
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BAS40-05Q-13-F
BAS40-05Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.35W
Reverse recovery time: 5ns
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BAS40-05Q-7-F BAS40_-04_-05_-06.pdf
BAS40-05Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.35W
Reverse recovery time: 5ns
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FZT688BTA FZT688.pdf
FZT688BTA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 4A; 3W; SOT223
Polarisation: bipolar
Case: SOT223
Mounting: SMD
Type of transistor: NPN
Power dissipation: 3W
Collector current: 4A
Collector-emitter voltage: 12V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Kind of package: reel; tape
auf Bestellung 225 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
98+0.73 EUR
150+0.48 EUR
Mindestbestellmenge: 61
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DMG3402L-7 DMG3402L.pdf
DMG3402L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Polarisation: unipolar
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Power dissipation: 1.4W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
auf Bestellung 1991 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
500+0.14 EUR
544+0.13 EUR
662+0.11 EUR
707+0.1 EUR
790+0.091 EUR
1000+0.087 EUR
Mindestbestellmenge: 455
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DMN3065LW-7 DMN3065LW.pdf
DMN3065LW-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Polarisation: unipolar
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Power dissipation: 0.77W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
auf Bestellung 2518 Stücke:
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Anzahl Preis
152+0.47 EUR
209+0.34 EUR
304+0.24 EUR
355+0.2 EUR
506+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 152
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PAM8302AADCR PAM8302A.pdf
PAM8302AADCR
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Type of integrated circuit: audio amplifier
Output power: 2.5W
Integrated circuit features: low noise; thermal protection
Mounting: SMD
Number of channels: 1
Amplifier class: D
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Voltage supply range: 2...5.5V DC
auf Bestellung 1059 Stücke:
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Anzahl Preis
129+0.56 EUR
185+0.39 EUR
203+0.35 EUR
230+0.31 EUR
250+0.3 EUR
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PAM8302AASCR PAM8302A.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Type of integrated circuit: audio amplifier
Output power: 2.5W
Integrated circuit features: low noise; thermal protection
Mounting: SMD
Number of channels: 1
Amplifier class: D
Case: MSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Voltage supply range: 2...5.5V DC
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PAM8302AAYCR PAM8302A.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Type of integrated circuit: audio amplifier
Output power: 2.5W
Integrated circuit features: low noise; thermal protection
Mounting: SMD
Number of channels: 1
Amplifier class: D
Case: U-DFN3030-8
Operating temperature: -40...85°C
Kind of package: reel; tape
Voltage supply range: 2...5.5V DC
Produkt ist nicht verfügbar
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ZVN2106A ZVN2106A.pdf
ZVN2106A
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.45A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.45A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
auf Bestellung 468 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
120+0.6 EUR
151+0.48 EUR
167+0.43 EUR
200+0.41 EUR
Mindestbestellmenge: 69
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ZVN2106ASTZ ZVN2106A.pdf
ZVN2106ASTZ
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.45A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.45A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
auf Bestellung 1603 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
102+0.7 EUR
154+0.47 EUR
250+0.42 EUR
Mindestbestellmenge: 66
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ZVN2110A ZVN2110A.pdf
ZVN2110A
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.32A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.32A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ZVN2110ASTZ ZVN2110A.pdf
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.32A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.32A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMCJ30A-13-F SMCJ_ser.pdf
SMCJ30A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 31A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
139+0.51 EUR
Mindestbestellmenge: 136
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DF01S-T DF005_10S.pdf
DF01S-T
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 1264 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
175+0.41 EUR
300+0.24 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 117
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BZT52C4V7S-7-F BZT52CxxS_ser.pdf
BZT52C4V7S-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 1205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
596+0.12 EUR
705+0.1 EUR
1205+0.059 EUR
Mindestbestellmenge: 500
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BZT52C4V7T-7 BZT52CxxT_ser.pdf
BZT52C4V7T-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
auf Bestellung 3172 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
758+0.094 EUR
863+0.083 EUR
1511+0.047 EUR
2223+0.032 EUR
2488+0.029 EUR
Mindestbestellmenge: 625
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BZT52C4V7Q-7-F BZT52Cxx_ser.pdf
BZT52C4V7Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 4.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
auf Bestellung 1340 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
770+0.093 EUR
953+0.075 EUR
1340+0.053 EUR
Mindestbestellmenge: 625
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BZT52C4V7LP-7 BZT52CxxLP_ser.pdf
BZT52C4V7LP-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 4.7V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
auf Bestellung 466 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
466+0.16 EUR
Mindestbestellmenge: 334
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BZT52C4V7SQ-7-F BZT52CxxS_ser.pdf
BZT52C4V7SQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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BZT52C4V7TQ-7-F ds30502.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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ZSR500GTA DS_31_ZSR%20Series.pdf
ZSR500GTA
Hersteller: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.2A; SOT223; SMD; ZSR
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.2A
Case: SOT223
Mounting: SMD
Manufacturer series: ZSR
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 7...20V
auf Bestellung 615 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
78+0.92 EUR
87+0.83 EUR
99+0.72 EUR
108+0.66 EUR
116+0.62 EUR
250+0.58 EUR
Mindestbestellmenge: 65
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DMT6012LPSW-13 DMT6012LPSW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.5A; Idm: 120A; 3.1W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 17mΩ
Power dissipation: 3.1W
Drain current: 10.5A
Gate-source voltage: ±20V
Pulsed drain current: 120A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMAZ18-13-F SMAZx-13-F.pdf
SMAZ18-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 3650 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
269+0.27 EUR
305+0.23 EUR
417+0.17 EUR
477+0.15 EUR
610+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 209
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ZXT13P20DE6TA ZXT13P20DE6.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 4A; 1.7W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4A
Power dissipation: 1.7W
Case: SOT23
Current gain: 300
Mounting: SMD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.4 EUR
Mindestbestellmenge: 3000
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SMAJ12A-13-F SMAJ_ser.pdf
SMAJ12A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2340 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
353+0.2 EUR
424+0.17 EUR
903+0.079 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ12AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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P4SMAJ12ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 12.2÷13.5V; 20.1A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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P6SMAJ12ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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DDTA124ECA-7-F ds30333.pdf
DDTA124ECA-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.2W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
auf Bestellung 5900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
550+0.13 EUR
903+0.079 EUR
1250+0.057 EUR
1421+0.05 EUR
3000+0.041 EUR
Mindestbestellmenge: 358
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ADTA124ECAQ-13 ADTA124ECAQ.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Power dissipation: 0.31W
Frequency: 250MHz
Quantity in set/package: 10000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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DDTA124EE-7-F ds30317.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.15W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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DDTA124EUA-7-F ds30325.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.2W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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DDTB114EC-7-F DDTB_XXXX_C.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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AS7808AT-E1 AS78XXA.pdf
Hersteller: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 1A; TO220-3; THT; AS78XXA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 8V
Output current: 1A
Case: TO220-3
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 10.6...23V
Manufacturer series: AS78XXA
Produkt ist nicht verfügbar
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DMPH6050SK3-13 DMPH6050SK3.pdf
DMPH6050SK3-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: TO252
Drain-source voltage: -60V
Pulsed drain current: -40A
Drain current: -6A
Gate charge: 25nC
On-state resistance: 70mΩ
Power dissipation: 3.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 2508 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
68+1.06 EUR
92+0.78 EUR
134+0.54 EUR
157+0.46 EUR
500+0.34 EUR
Mindestbestellmenge: 68
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AP3125BKTR-G1 AP3125B.pdf
AP3125BKTR-G1
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 20÷70kHz; Ch: 1; SOT26; flyback
Application: SMPS
Case: SOT26
Type of integrated circuit: PMIC
Topology: flyback
Mounting: SMD
Operating temperature: -20...125°C
Duty cycle factor: 0...80%
Output current: 0.35A
Number of channels: 1
Supply voltage: 10...25V
Frequency: 20...70kHz
Kind of integrated circuit: PWM controller
Produkt ist nicht verfügbar
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BSS138K-7 BSS138K.pdf
Hersteller: DIODES INCORPORATED
Category: Transistors - Unclassified
Description: BSS138K-7
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.036 EUR
Mindestbestellmenge: 3000
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SMCJ170A-13-F SMCJ_ser.pdf
SMCJ170A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1489 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
230+0.31 EUR
296+0.24 EUR
Mindestbestellmenge: 193
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BAS21-7-F BAS19_20_21.pdf
BAS21-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Max. load current: 0.4A
Features of semiconductor devices: small signal
auf Bestellung 660 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
660+0.11 EUR
Mindestbestellmenge: 660
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BAS21DWA-7 BAS21DWA.pdf
BAS21DWA-7
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT353; Ufmax: 1.3V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Capacitance: 0.7pF
Case: SOT353
Max. forward voltage: 1.3V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 2390 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
642+0.11 EUR
926+0.077 EUR
1053+0.068 EUR
1330+0.054 EUR
Mindestbestellmenge: 455
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BAS21Q-13-F Ds12004.pdf
BAS21Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.4A
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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BAS21TWQ-7 BAS21TWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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BAS21WQ-7-F BAS21WQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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BAS21TM-7 BAS21TM.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; SOT26; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SOT26
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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BAS21TMQ-13 BAS21TM.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; SOT26; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SOT26
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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DMT10H015SK3-13 DMT10H015SK3.pdf
DMT10H015SK3-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 215A; 2.9W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Pulsed drain current: 215A
Power dissipation: 2.9W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 30.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2462 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
83+0.87 EUR
95+0.76 EUR
112+0.64 EUR
500+0.53 EUR
1000+0.52 EUR
Mindestbestellmenge: 63
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AP5724WUG-7 AP5724.pdf
AP5724WUG-7
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 40mA; TSOT26; SMD; 1÷1.4MHz
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Case: TSOT26
Mounting: SMD
Topology: boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Integrated circuit features: PWM; soft-start function; UVLO (UnderVoltage LockOut)
Operating voltage: 2.7...5.5V DC
Frequency: 1...1.4MHz
Output current: 40mA
auf Bestellung 2287 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
156+0.46 EUR
197+0.36 EUR
250+0.35 EUR
Mindestbestellmenge: 109
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SMCJ36AQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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HBS410-13 HBS410.pdf
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 4A; Ifsm: 120A; HBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 120A
Case: HBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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TT410-13 TT410.pdf
Hersteller: DIODES INCORPORATED
Category: Bridge rectifiers - Unclassified
Description: TT410-13
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1500+0.43 EUR
Mindestbestellmenge: 1500
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DMG7430LFG-7 DMG7430LFG.pdf
DMG7430LFG-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.2A; 0.9W; PowerDI®3333-8
Kind of package: 7 inch reel; tape
Case: PowerDI®3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 15mΩ
Power dissipation: 0.9W
Drain current: 9.2A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Polarisation: unipolar
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
155+0.46 EUR
Mindestbestellmenge: 155
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QSBT40-7-F ds30195.pdf
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT363; Ch: 4; reel,tape
Type of diode: TVS array
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Semiconductor structure: unidirectional
Kind of package: reel; tape
Number of channels: 4
Produkt ist nicht verfügbar
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2N7002T-7-F 2N7002T.pdf
2N7002T-7-F
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.15W; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 3070 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
421+0.17 EUR
625+0.11 EUR
746+0.096 EUR
1099+0.065 EUR
1276+0.056 EUR
3000+0.05 EUR
Mindestbestellmenge: 295
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FMMT618TA FMMT618.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 6A
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
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FMMT618QTA FMMT618.pdf
FMMT618QTA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 6A
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Application: automotive industry
auf Bestellung 755 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
142+0.51 EUR
226+0.32 EUR
500+0.24 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
FMMT618TA FMMT618.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 6A
Current gain: 100...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...140MHz
Produkt ist nicht verfügbar
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ZXSC310E5TA ZXSC310.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; SOT23-5; SMD; 200kHz; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Case: SOT23-5
Mounting: SMD
Frequency: 200kHz
Topology: boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 800mV DC...8V DC
Efficiency: 94%
Produkt ist nicht verfügbar
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MMDT2227Q-7-F MMDT2227Q.pdf
MMDT2227Q-7-F
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40/60V; 0.6A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40/60V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Current gain: 35...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
auf Bestellung 2968 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
271+0.26 EUR
480+0.15 EUR
685+0.1 EUR
1000+0.092 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
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