| Anzahl | Preis |
|---|---|
| 4+ | 0.83 EUR |
| 10+ | 0.51 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.22 EUR |
| 6000+ | 0.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMG3407SSN-7 Diodes Incorporated
Description: MOSFET P-CH 30V 4A SC59, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 4.1A, 10V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SC-59-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V.
Weitere Produktangebote DMG3407SSN-7 nach Preis ab 0.22 EUR bis 0.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMG3407SSN-7 | Diodes Incorporated |
 Description: MOSFET P-CH 30V 4A SC59Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4.1A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V |
auf Bestellung 2044 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMG3407SSN-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 4A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.1A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SC-59-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V
Description: MOSFET P-CH 30V 4A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.1A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SC-59-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V
auf Bestellung 2044 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 0.83 EUR |
| 35+ | 0.51 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.22 EUR |