auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.22 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP2100UFU-7 Diodes Zetex
Description: MOSFET 2P-CH 20V U-DFN2030-6, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5.7A, Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V, Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: U-DFN2030-6 (Type B), Part Status: Active.
Weitere Produktangebote DMP2100UFU-7 nach Preis ab 0.19 EUR bis 0.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMP2100UFU-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2P-CH 20V U-DFN2030-6Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.7A Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) Part Status: Active |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
DMP2100UFU-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6 Mounting: SMD Case: U-DFN2030-6 Drain-source voltage: -20V Drain current: -4.1A On-state resistance: 75mΩ Type of transistor: P-MOSFET x2 Power dissipation: 0.9W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2520 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
|
|
DMP2100UFU-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6 Mounting: SMD Case: U-DFN2030-6 Drain-source voltage: -20V Drain current: -4.1A On-state resistance: 75mΩ Type of transistor: P-MOSFET x2 Power dissipation: 0.9W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V |
auf Bestellung 2520 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
DMP2100UFU-7 | Hersteller : Diodes Incorporated |
MOSFET Dual P-Ch Enh FET 20Vdss 10Vgss 0.9W |
auf Bestellung 4094 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
DMP2100UFU-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2P-CH 20V U-DFN2030-6 Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.7A Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) Part Status: Active |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
|||||||||||||||||
 |
DMP2100UFU-7 | Hersteller : Diodes Inc |
Dual P-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
DMP2100UFU-7 | Hersteller : Diodes Zetex |
Dual P-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |