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Technische Details BS107PSTZ Diodes Zetex
Description: DIODES INC. - BS107PSTZ - Leistungs-MOSFET, n-Kanal, 200 V, 120 mA, 30 ohm, E-Line, Durchsteckmontage, tariffCode: 85411000, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 200V, rohsCompliant: YES, Dauer-Drainstrom Id: 120mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 500mW, Bauform - Transistor: E-Line, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 5V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 30ohm, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote BS107PSTZ nach Preis ab 0.42 EUR bis 2.16 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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BS107PSTZ | Diodes Zetex |
 Trans MOSFET N-CH 200V 0.12A 3-Pin E-Line T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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BS107PSTZ | Diodes Incorporated |
Description: MOSFET N-CH 200V 120MA E-LINE Packaging: Tape & Box (TB) Package / Case: E-Line-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 5V Power Dissipation (Max): 500mW (Ta) Supplier Device Package: E-Line (TO-92 compatible) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.6V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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BS107PSTZ | Diodes Zetex |
Trans MOSFET N-CH 200V 0.12A 3-Pin E-Line T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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BS107PSTZ | Diodes Zetex |
Trans MOSFET N-CH 200V 0.12A 3-Pin E-Line T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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BS107PSTZ | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.12A; 0.5W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.12A Power dissipation: 0.5W Case: TO92 Gate-source voltage: ±20V On-state resistance: 23Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhancement |
auf Bestellung 53 Stücke: Lieferzeit 14-21 Tag (e) |
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BS107PSTZ | Diodes Incorporated |
MOSFETs N-Chnl 200V |
auf Bestellung 2406 Stücke: Lieferzeit 10-14 Tag (e) |
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BS107PSTZ | Diodes Incorporated |
Description: MOSFET N-CH 200V 120MA E-LINE Packaging: Cut Tape (CT) Package / Case: E-Line-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 5V Power Dissipation (Max): 500mW (Ta) Supplier Device Package: E-Line (TO-92 compatible) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.6V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1710 Stücke: Lieferzeit 10-14 Tag (e) |
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BS107PSTZ | DIODES INC. |
Description: DIODES INC. - BS107PSTZ - Leistungs-MOSFET, n-Kanal, 200 V, 120 mA, 30 ohm, E-Line, Durchsteckmontage tariffCode: 85411000 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 200V rohsCompliant: YES Dauer-Drainstrom Id: 120mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: E-Line Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 30ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 1303 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BS107PSTZ |
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Hersteller: Diodes Zetex
Trans MOSFET N-CH 200V 0.12A 3-Pin E-Line T/R
Trans MOSFET N-CH 200V 0.12A 3-Pin E-Line T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.42 EUR |
| BS107PSTZ |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 200V 120MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 5V
Power Dissipation (Max): 500mW (Ta)
Supplier Device Package: E-Line (TO-92 compatible)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.6V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 200V 120MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 5V
Power Dissipation (Max): 500mW (Ta)
Supplier Device Package: E-Line (TO-92 compatible)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.6V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.59 EUR |
| BS107PSTZ |
|
Hersteller: Diodes Zetex
Trans MOSFET N-CH 200V 0.12A 3-Pin E-Line T/R
Trans MOSFET N-CH 200V 0.12A 3-Pin E-Line T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.6 EUR |
| BS107PSTZ |
|
Hersteller: Diodes Zetex
Trans MOSFET N-CH 200V 0.12A 3-Pin E-Line T/R
Trans MOSFET N-CH 200V 0.12A 3-Pin E-Line T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.7 EUR |
| BS107PSTZ |
|
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.12A; 0.5W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.12A
Power dissipation: 0.5W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 23Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.12A; 0.5W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.12A
Power dissipation: 0.5W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 23Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 53+ | 1.34 EUR |
| BS107PSTZ |
|
Hersteller: Diodes Incorporated
MOSFETs N-Chnl 200V
MOSFETs N-Chnl 200V
auf Bestellung 2406 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.16 EUR |
| 10+ | 1.34 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.64 EUR |
| 2000+ | 0.54 EUR |
| 4000+ | 0.52 EUR |
| BS107PSTZ |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 200V 120MA E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 5V
Power Dissipation (Max): 500mW (Ta)
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.6V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 200V 120MA E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 5V
Power Dissipation (Max): 500mW (Ta)
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.6V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1710 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.16 EUR |
| 13+ | 1.36 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.64 EUR |
| BS107PSTZ |
|
Hersteller: DIODES INC.
Description: DIODES INC. - BS107PSTZ - Leistungs-MOSFET, n-Kanal, 200 V, 120 mA, 30 ohm, E-Line, Durchsteckmontage
tariffCode: 85411000
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 120mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 500mW
Bauform - Transistor: E-Line
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 30ohm
SVHC: No SVHC (25-Jun-2025)
Description: DIODES INC. - BS107PSTZ - Leistungs-MOSFET, n-Kanal, 200 V, 120 mA, 30 ohm, E-Line, Durchsteckmontage
tariffCode: 85411000
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 120mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 500mW
Bauform - Transistor: E-Line
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 30ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 1303 Stücke:
Lieferzeit 14-21 Tag (e)