BS107PSTZ Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 200V 120MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 5V
Power Dissipation (Max): 500mW (Ta)
Supplier Device Package: E-Line (TO-92 compatible)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.6V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.75 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details BS107PSTZ Diodes Incorporated
Description: DIODES INC. - BS107PSTZ - Leistungs-MOSFET, n-Kanal, 200 V, 120 mA, 30 ohm, E-Line, Durchsteckmontage, tariffCode: 85411000, Transistormontage: Durchsteckmontage, euEccn: NLR, Drain-Source-Spannung Vds: 200V, rohsCompliant: YES, Dauer-Drainstrom Id: 120mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 3V, Verlustleistung: 500mW, SVHC: No SVHC (04-Feb-2026), Bauform - Transistor: E-Line, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 5V, Drain-Source-Durchgangswiderstand: 30ohm.
Weitere Produktangebote BS107PSTZ nach Preis ab 1.11 EUR bis 4.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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BS107PSTZ | Diodes Incorporated |
MOSFETs N-Chnl 200V |
auf Bestellung 2296 Stücke: Lieferzeit 10-14 Tag (e) |
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BS107PSTZ | Diodes Incorporated |
Description: MOSFET N-CH 200V 120MA E-LINE Packaging: Cut Tape (CT) Package / Case: E-Line-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 5V Power Dissipation (Max): 500mW (Ta) Supplier Device Package: E-Line (TO-92 compatible) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.6V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1699 Stücke: Lieferzeit 10-14 Tag (e) |
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BS107PSTZ | DIODES INC. |
Description: DIODES INC. - BS107PSTZ - Leistungs-MOSFET, n-Kanal, 200 V, 120 mA, 30 ohm, E-Line, Durchsteckmontage tariffCode: 85411000 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 200V rohsCompliant: YES Dauer-Drainstrom Id: 120mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 500mW SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: E-Line Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 5V Drain-Source-Durchgangswiderstand: 30ohm |
auf Bestellung 591 Stücke: Lieferzeit 14-21 Tag (e) |
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BS107PSTZ | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.12A; 0.5W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.12A Power dissipation: 0.5W Case: TO92 Gate-source voltage: ±20V On-state resistance: 23Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhancement |
auf Bestellung 1950 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BS107PSTZ |
|
Hersteller: Diodes Incorporated
MOSFETs N-Chnl 200V
MOSFETs N-Chnl 200V
auf Bestellung 2296 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.76 EUR |
| 10+ | 1.3 EUR |
| 100+ | 1.11 EUR |
| BS107PSTZ |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 200V 120MA E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 5V
Power Dissipation (Max): 500mW (Ta)
Supplier Device Package: E-Line (TO-92 compatible)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.6V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 200V 120MA E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 5V
Power Dissipation (Max): 500mW (Ta)
Supplier Device Package: E-Line (TO-92 compatible)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.6V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1699 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.76 EUR |
| 13+ | 1.74 EUR |
| 25+ | 1.46 EUR |
| 50+ | 1.3 EUR |
| 100+ | 1.15 EUR |
| BS107PSTZ |
|
Hersteller: DIODES INC.
Description: DIODES INC. - BS107PSTZ - Leistungs-MOSFET, n-Kanal, 200 V, 120 mA, 30 ohm, E-Line, Durchsteckmontage
tariffCode: 85411000
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 120mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 500mW
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: E-Line
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 5V
Drain-Source-Durchgangswiderstand: 30ohm
Description: DIODES INC. - BS107PSTZ - Leistungs-MOSFET, n-Kanal, 200 V, 120 mA, 30 ohm, E-Line, Durchsteckmontage
tariffCode: 85411000
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 120mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 500mW
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: E-Line
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 5V
Drain-Source-Durchgangswiderstand: 30ohm
auf Bestellung 591 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 55+ | 4.57 EUR |
| 113+ | 2.06 EUR |
| 160+ | 1.34 EUR |
| 500+ | 1.33 EUR |
| BS107PSTZ |
|
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.12A; 0.5W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.12A
Power dissipation: 0.5W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 23Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.12A; 0.5W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.12A
Power dissipation: 0.5W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 23Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
auf Bestellung 1950 Stücke:
Lieferzeit 14-21 Tag (e)