DMC4047LSD-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 40V 7A/5.1A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.1A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.38 EUR |
| 5000+ | 0.35 EUR |
| 7500+ | 0.33 EUR |
| 12500+ | 0.31 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMC4047LSD-13 Diodes Incorporated
Description: MOSFET N/P-CH 40V 7A/5.1A 8SO, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.4V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V, Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 7A, 5.1A, Drain to Source Voltage (Vdss): 40V, Power - Max: 1.3W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote DMC4047LSD-13 nach Preis ab 0.32 EUR bis 1.55 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMC4047LSD-13 | Diodes Incorporated |
MOSFETs FET BVDSS 31V 40V 1.3W 1180pF 21.3nC |
auf Bestellung 6407 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
DMC4047LSD-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 40V 7A/5.1A 8SO Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V Current - Continuous Drain (Id) @ 25°C: 7A, 5.1A Drain to Source Voltage (Vdss): 40V Power - Max: 1.3W Technology: MOSFET (Metal Oxide) Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.4V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V |
auf Bestellung 37734 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMC4047LSD-13 |
|
Hersteller: Diodes Incorporated
MOSFETs FET BVDSS 31V 40V 1.3W 1180pF 21.3nC
MOSFETs FET BVDSS 31V 40V 1.3W 1180pF 21.3nC
auf Bestellung 6407 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.54 EUR |
| 10+ | 0.75 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.44 EUR |
| 2500+ | 0.32 EUR |
| DMC4047LSD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 40V 7A/5.1A 8SO
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.1A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Description: MOSFET N/P-CH 40V 7A/5.1A 8SO
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.1A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
auf Bestellung 37734 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.55 EUR |
| 19+ | 0.96 EUR |
| 100+ | 0.63 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.44 EUR |