DMP2078LCA3-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 20V 3.4A X4DSN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V
Power Dissipation (Max): 810mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: X4-DSN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): -12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.14 EUR |
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Technische Details DMP2078LCA3-7 Diodes Incorporated
Description: MOSFET P-CH 20V 3.4A X4DSN1006-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V, Power Dissipation (Max): 810mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: X4-DSN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Vgs (Max): -12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 10 V.
Weitere Produktangebote DMP2078LCA3-7 nach Preis ab 0.13 EUR bis 0.74 EUR
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DMP2078LCA3-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V~24V X4-DSN1006-3 T&R 10K |
auf Bestellung 29978 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2078LCA3-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 3.4A X4DSN1006-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V Power Dissipation (Max): 810mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: X4-DSN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): -12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 10 V |
auf Bestellung 26171 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2078LCA3-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W Kind of package: reel; tape Drain-source voltage: -20V Drain current: -2.7A On-state resistance: 0.6Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -13A Mounting: SMD Case: X4-DSN1006-3 Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2078LCA3-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W Kind of package: reel; tape Drain-source voltage: -20V Drain current: -2.7A On-state resistance: 0.6Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -13A Mounting: SMD Case: X4-DSN1006-3 |
Produkt ist nicht verfügbar |