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DMP610DL-7 DMP610DL-7 DIODES INCORPORATED DMP610DL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.13A
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 560pC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 813 Stücke:
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358+0.2 EUR
500+0.14 EUR
813+0.089 EUR
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DMP610DLQ-7 DMP610DLQ-7 DIODES INCORPORATED DMP610DLQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.13A
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 560pC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMP610DL-13 DMP610DL-13 DIODES INCORPORATED DMP610DL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -130mA
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 560pC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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PDS5100-13 DIODES INCORPORATED ds30483.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Leakage current: 5mA
Max. forward impulse current: 120A
Kind of package: reel; tape
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PDS5100H-13 DIODES INCORPORATED ds30471.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
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PDS5100HQ-13 DIODES INCORPORATED ds30471.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Application: automotive industry
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PDS5100HQ-13D DIODES INCORPORATED ds30471.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Application: automotive industry
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PDS5100Q-13D DIODES INCORPORATED PDS5100Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Application: automotive industry
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BZX84C6V8-7-F BZX84C6V8-7-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.8V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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AZ23C6V8-7-F AZ23C6V8-7-F DIODES INCORPORATED AZ23C_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
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DMPH6250SQ-7 DMPH6250SQ-7 DIODES INCORPORATED DMPH6250SQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH6250SQ-13 DMPH6250SQ-13 DIODES INCORPORATED DMPH6250SQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DDZ30CSF-7 DIODES INCORPORATED ds31987.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD323F; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323F
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Produkt ist nicht verfügbar
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SMAJ90A-13-F SMAJ90A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 100÷111V; 2.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3495 Stücke:
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368+0.19 EUR
449+0.16 EUR
610+0.12 EUR
828+0.086 EUR
1000+0.076 EUR
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MBRB10100CT-13 MBRB10100CT-13 DIODES INCORPORATED MBRB10100CT_Rev.5-2_Apr2016.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO263AB
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Leakage current: 10mA
Kind of package: reel; tape
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MBRD10100CT-13 DIODES INCORPORATED MBRD10100CT.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: DPAK
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Leakage current: 10mA
Kind of package: reel; tape
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MBRB10100CT DIODES INCORPORATED MBR1080(90)(100)CT(-1)%20MBRB1080(90)(100)CT%20N0735%20REV.A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Leakage current: 10mA
Kind of package: tube
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DMG6601LVT-7 DMG6601LVT-7 DIODES INCORPORATED DMG6601LVT-7.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 3/-2A
Power dissipation: 0.54W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.065/0.142Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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173+0.41 EUR
235+0.3 EUR
341+0.21 EUR
404+0.18 EUR
547+0.13 EUR
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B140HW-7 B140HW-7 DIODES INCORPORATED B140HW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Max. forward impulse current: 16A
Kind of package: reel; tape
auf Bestellung 1893 Stücke:
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250+0.29 EUR
313+0.23 EUR
350+0.2 EUR
511+0.14 EUR
695+0.1 EUR
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B140B-13-F B140B-13-F DIODES INCORPORATED b120-160b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Capacitance: 0.11nF
Max. forward voltage: 0.5V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
auf Bestellung 2555 Stücke:
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264+0.27 EUR
368+0.19 EUR
466+0.15 EUR
518+0.14 EUR
674+0.11 EUR
1000+0.094 EUR
2500+0.079 EUR
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B140HB-13-F B140HB-13-F DIODES INCORPORATED B140HB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Capacitance: 80pF
Max. forward voltage: 0.49V
Load current: 1A
Max. forward impulse current: 45A
Max. off-state voltage: 40V
auf Bestellung 2761 Stücke:
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200+0.36 EUR
257+0.28 EUR
311+0.23 EUR
439+0.16 EUR
463+0.15 EUR
625+0.11 EUR
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DDZ9678-7 DDZ9678-7 DIODES INCORPORATED DDZ9689-7.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 1.8V; SMD; SOD123; reel,tape; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 1.8V
Semiconductor structure: single diode
Type of diode: Zener
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455+0.16 EUR
569+0.13 EUR
1266+0.056 EUR
1629+0.044 EUR
1651+0.043 EUR
3000+0.04 EUR
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AP7354D-18W5-7 AP7354D-18W5-7 DIODES INCORPORATED AP7354.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 1.8V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7354
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...5.5V
Integrated circuit features: output discharge; shutdown mode control input
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264+0.27 EUR
298+0.24 EUR
343+0.21 EUR
360+0.2 EUR
500+0.19 EUR
1000+0.18 EUR
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DMN10H120SFG-13 DIODES INCORPORATED DMN10H120SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.5W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN10H120SFG-7 DIODES INCORPORATED DMN10H120SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.5W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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AS358MTR-G1 AS358MTR-G1 DIODES INCORPORATED AS358-358A-358B.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; SO8; 100dB; 2mV; 550mW
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...85°C
Open-loop gain: 100dB
Integrated circuit features: low power
Input offset voltage: 2mV
Kind of package: reel; tape
Power dissipation: 0.55W
auf Bestellung 1851 Stücke:
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455+0.16 EUR
650+0.11 EUR
745+0.096 EUR
910+0.079 EUR
1021+0.07 EUR
1109+0.064 EUR
1185+0.06 EUR
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AS358MTR-E1 DIODES INCORPORATED AS358-358A-358B.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; SO8; Features: low power
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
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AS358MMTR-G1 DIODES INCORPORATED AS358-358A-358B.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; MSOP8; 7mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: MSOP8
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
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FMMT617 DIODES INCORPORATED FMMT617.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 120MHz
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FMMT617TA FMMT617TA DIODES INCORPORATED FMMT617.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Produkt ist nicht verfügbar
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AP1506-50K5G-13 AP1506-50K5G-13 DIODES INCORPORATED AP1506x-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷22VDC; Uout: 5VDC; 3A; TO263-5; SMD
Kind of package: reel; tape
Topology: buck
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -20...85°C
Output current: 3A
Input voltage: 4.5...22V DC
Output voltage: 5V DC
Efficiency: 80%
Frequency: 150kHz
Case: TO263-5
auf Bestellung 463 Stücke:
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50+1.44 EUR
55+1.32 EUR
100+1.27 EUR
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GBJ1506-F GBJ1506-F DIODES INCORPORATED GBJ15_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 0.24kA
Version: flat
Case: GBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
auf Bestellung 107 Stücke:
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30+2.42 EUR
48+1.5 EUR
50+1.43 EUR
75+1.17 EUR
105+1.1 EUR
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DDTC143ECA-7-F DDTC143ECA-7-F DIODES INCORPORATED ds30329.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
auf Bestellung 3000 Stücke:
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417+0.17 EUR
625+0.11 EUR
989+0.072 EUR
1276+0.056 EUR
1421+0.05 EUR
3000+0.041 EUR
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DDTC143ZCA-7-F DDTC143ZCA-7-F DIODES INCORPORATED ds30330.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
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DDTC143ZUA-7-F
+1
 		DDTC143ZUA-7-F DIODES INCORPORATED ds30322.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
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BCV47TA BCV47TA DIODES INCORPORATED bcv27%2C47.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 500mA; 330mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Pulsed collector current: 0.8A
Quantity in set/package: 3000pcs.
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BCV47QTC DIODES INCORPORATED BCV47Q.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Application: automotive industry
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BCV47QTA BCV47QTA DIODES INCORPORATED BCV47Q.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 310mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Current gain: 2k
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Pulsed collector current: 0.8A
Application: automotive industry
Quantity in set/package: 3000pcs.
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BCV47TC DIODES INCORPORATED bcv27%2C47.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 500mA; 330mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Pulsed collector current: 0.8A
Quantity in set/package: 10000pcs.
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SMAJ26A-13-F SMAJ26A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ26AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P6SMAJ26ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMN2230U-7 DMN2230U-7 DIODES INCORPORATED DMN2230U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2230UQ-7 DMN2230UQ-7 DIODES INCORPORATED DMN2230UQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMN2310UT-13 DIODES INCORPORATED DMN2310UT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; 490mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Power dissipation: 490mW
Case: SOT523
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 0.7nC
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DMN2230UQ-13 DMN2230UQ-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 7A; 600mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 7A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMN2300U-7 DMN2300U-7 DIODES INCORPORATED DMN2300U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.01A; Idm: 11A; 550mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.01A
Pulsed drain current: 11A
Power dissipation: 0.55W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2310UWQ-7 DMN2310UWQ-7 DIODES INCORPORATED DMN2310UWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Pulsed drain current: 4.4A
Power dissipation: 0.55W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMN2310U-7 DMN2310U-7 DIODES INCORPORATED DMN2310U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 680mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Pulsed drain current: 4.8A
Power dissipation: 0.68W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2310UW-7 DMN2310UW-7 DIODES INCORPORATED DMN2310UW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Pulsed drain current: 4.4A
Power dissipation: 0.55W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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SMBJ16CA-13-F SMBJ16CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷20.5V; 23.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 1209 Stücke:
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250+0.29 EUR
309+0.23 EUR
348+0.21 EUR
511+0.14 EUR
650+0.11 EUR
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SMCJ16CA-13-F SMCJ16CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.8÷19.7V; 57.7A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 57.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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AP5724FDCG-7 DIODES INCORPORATED AP5724.pdf Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 40mA; U-DFN2020-6; SMD
Operating temperature: -40...85°C
Mounting: SMD
Operating voltage: 2.7...5.5V DC
Frequency: 1...1.4MHz
Topology: boost
Kind of integrated circuit: DC/DC converter; LED driver
Type of integrated circuit: driver
Case: U-DFN2020-6
Integrated circuit features: PWM; soft-start function; UVLO (UnderVoltage LockOut)
Kind of package: reel; tape
Output current: 40mA
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AP3401KTTR-G1 AP3401KTTR-G1 DIODES INCORPORATED AP3401x-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT26
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
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DMN3401LDW-7 DMN3401LDW-7 DIODES INCORPORATED DMN3401LDW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMG3406L-7 DMG3406L-7 DIODES INCORPORATED DMG3406L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Power dissipation: 1.4W
Gate-source voltage: ±20V
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272+0.26 EUR
397+0.18 EUR
469+0.15 EUR
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DMG3404L-7 DMG3404L-7 DIODES INCORPORATED DMG3404L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.8A
Power dissipation: 1.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMG3406L-13 DMG3406L-13 DIODES INCORPORATED DMG3406L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Power dissipation: 1.4W
Gate-source voltage: ±20V
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DMG3402LQ-7 DMG3402LQ-7 DIODES INCORPORATED DMG3402LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Gate charge: 11.7nC
On-state resistance: 85mΩ
Power dissipation: 1.4W
Gate-source voltage: ±12V
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DMG3401LSNQ-7 DIODES INCORPORATED DMG3401LSNQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SC59
Polarisation: unipolar
Pulsed drain current: -30A
Drain-source voltage: -30V
Drain current: -2.9A
Gate charge: 25.1nC
On-state resistance: 85mΩ
Power dissipation: 1.2W
Gate-source voltage: ±12V
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DMP610DL-7 DMP610DL.pdf
DMP610DL-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.13A
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 560pC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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358+0.2 EUR
500+0.14 EUR
813+0.089 EUR
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DMP610DLQ-7 DMP610DLQ.pdf
DMP610DLQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.13A
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 560pC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMP610DL-13 DMP610DL.pdf
DMP610DL-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -130mA
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 560pC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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PDS5100-13 ds30483.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Leakage current: 5mA
Max. forward impulse current: 120A
Kind of package: reel; tape
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PDS5100H-13 ds30471.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
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PDS5100HQ-13 ds30471.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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PDS5100HQ-13D ds30471.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Application: automotive industry
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PDS5100Q-13D PDS5100Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BZX84C6V8-7-F BZX84Cxx_SER.pdf
BZX84C6V8-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.8V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 409 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
409+0.17 EUR
Mindestbestellmenge: 409
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AZ23C6V8-7-F AZ23C_ser.pdf
AZ23C6V8-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Produkt ist nicht verfügbar
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DMPH6250SQ-7 DMPH6250SQ.pdf
DMPH6250SQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMPH6250SQ-13 DMPH6250SQ.pdf
DMPH6250SQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DDZ30CSF-7 ds31987.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD323F; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323F
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Produkt ist nicht verfügbar
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SMAJ90A-13-F SMAJ_ser.pdf
SMAJ90A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 100÷111V; 2.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3495 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
368+0.19 EUR
449+0.16 EUR
610+0.12 EUR
828+0.086 EUR
1000+0.076 EUR
Mindestbestellmenge: 264
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MBRB10100CT-13 MBRB10100CT_Rev.5-2_Apr2016.pdf
MBRB10100CT-13
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO263AB
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Leakage current: 10mA
Kind of package: reel; tape
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
Mindestbestellmenge: 67
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MBRD10100CT-13 MBRD10100CT.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: DPAK
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Leakage current: 10mA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MBRB10100CT MBR1080(90)(100)CT(-1)%20MBRB1080(90)(100)CT%20N0735%20REV.A.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Leakage current: 10mA
Kind of package: tube
Produkt ist nicht verfügbar
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DMG6601LVT-7 DMG6601LVT-7.pdf
DMG6601LVT-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 3/-2A
Power dissipation: 0.54W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.065/0.142Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 547 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
235+0.3 EUR
341+0.21 EUR
404+0.18 EUR
547+0.13 EUR
Mindestbestellmenge: 173
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B140HW-7 B140HW.pdf
B140HW-7
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Max. forward impulse current: 16A
Kind of package: reel; tape
auf Bestellung 1893 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
313+0.23 EUR
350+0.2 EUR
511+0.14 EUR
695+0.1 EUR
1000+0.093 EUR
Mindestbestellmenge: 250
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B140B-13-F b120-160b.pdf
B140B-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Capacitance: 0.11nF
Max. forward voltage: 0.5V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
auf Bestellung 2555 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
368+0.19 EUR
466+0.15 EUR
518+0.14 EUR
674+0.11 EUR
1000+0.094 EUR
2500+0.079 EUR
Mindestbestellmenge: 264
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B140HB-13-F B140HB.pdf
B140HB-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Capacitance: 80pF
Max. forward voltage: 0.49V
Load current: 1A
Max. forward impulse current: 45A
Max. off-state voltage: 40V
auf Bestellung 2761 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
257+0.28 EUR
311+0.23 EUR
439+0.16 EUR
463+0.15 EUR
625+0.11 EUR
Mindestbestellmenge: 200
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DDZ9678-7 DDZ9689-7.pdf
DDZ9678-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 1.8V; SMD; SOD123; reel,tape; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 1.8V
Semiconductor structure: single diode
Type of diode: Zener
auf Bestellung 5885 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
455+0.16 EUR
569+0.13 EUR
1266+0.056 EUR
1629+0.044 EUR
1651+0.043 EUR
3000+0.04 EUR
Mindestbestellmenge: 334
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AP7354D-18W5-7 AP7354.pdf
AP7354D-18W5-7
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 1.8V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7354
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...5.5V
Integrated circuit features: output discharge; shutdown mode control input
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
264+0.27 EUR
298+0.24 EUR
343+0.21 EUR
360+0.2 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 186
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DMN10H120SFG-13 DMN10H120SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.5W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN10H120SFG-7 DMN10H120SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.5W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AS358MTR-G1 AS358-358A-358B.pdf
AS358MTR-G1
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; SO8; 100dB; 2mV; 550mW
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...85°C
Open-loop gain: 100dB
Integrated circuit features: low power
Input offset voltage: 2mV
Kind of package: reel; tape
Power dissipation: 0.55W
auf Bestellung 1851 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
650+0.11 EUR
745+0.096 EUR
910+0.079 EUR
1021+0.07 EUR
1109+0.064 EUR
1185+0.06 EUR
Mindestbestellmenge: 455
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AS358MTR-E1 AS358-358A-358B.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; SO8; Features: low power
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
Produkt ist nicht verfügbar
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AS358MMTR-G1 AS358-358A-358B.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; MSOP8; 7mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: MSOP8
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
Produkt ist nicht verfügbar
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FMMT617 FMMT617.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Produkt ist nicht verfügbar
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FMMT617TA FMMT617.pdf
FMMT617TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Produkt ist nicht verfügbar
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AP1506-50K5G-13 AP1506x-DTE.pdf
AP1506-50K5G-13
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷22VDC; Uout: 5VDC; 3A; TO263-5; SMD
Kind of package: reel; tape
Topology: buck
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -20...85°C
Output current: 3A
Input voltage: 4.5...22V DC
Output voltage: 5V DC
Efficiency: 80%
Frequency: 150kHz
Case: TO263-5
auf Bestellung 463 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
50+1.44 EUR
55+1.32 EUR
100+1.27 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
GBJ1506-F GBJ15_ser.pdf
GBJ1506-F
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 0.24kA
Version: flat
Case: GBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.42 EUR
48+1.5 EUR
50+1.43 EUR
75+1.17 EUR
105+1.1 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
DDTC143ECA-7-F ds30329.pdf
DDTC143ECA-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
625+0.11 EUR
989+0.072 EUR
1276+0.056 EUR
1421+0.05 EUR
3000+0.041 EUR
Mindestbestellmenge: 417
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DDTC143ZCA-7-F ds30330.pdf
DDTC143ZCA-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DDTC143ZUA-7-F ds30322.pdf
DDTC143ZUA-7-F
+1
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
Mindestbestellmenge: 59
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BCV47TA bcv27%2C47.pdf
BCV47TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 500mA; 330mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Pulsed collector current: 0.8A
Quantity in set/package: 3000pcs.
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
137+0.51 EUR
Mindestbestellmenge: 137
Im Einkaufswagen  Stück im Wert von  UAH
BCV47QTC BCV47Q.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCV47QTA BCV47Q.pdf
BCV47QTA
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 310mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Current gain: 2k
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Pulsed collector current: 0.8A
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCV47TC bcv27%2C47.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 500mA; 330mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Pulsed collector current: 0.8A
Quantity in set/package: 10000pcs.
Produkt ist nicht verfügbar
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SMAJ26A-13-F SMAJ_ser.pdf
SMAJ26A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 4238 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
305+0.23 EUR
368+0.19 EUR
991+0.072 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ26AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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P6SMAJ26ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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DMN2230U-7 DMN2230U.pdf
DMN2230U-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 745 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
350+0.21 EUR
435+0.17 EUR
490+0.15 EUR
525+0.14 EUR
Mindestbestellmenge: 350
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DMN2230UQ-7 DMN2230UQ.pdf
DMN2230UQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
172+0.42 EUR
248+0.29 EUR
Mindestbestellmenge: 125
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DMN2310UT-13 DMN2310UT.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; 490mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Power dissipation: 490mW
Case: SOT523
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 0.7nC
Produkt ist nicht verfügbar
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DMN2230UQ-13
DMN2230UQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 7A; 600mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 7A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMN2300U-7 DMN2300U.pdf
DMN2300U-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.01A; Idm: 11A; 550mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.01A
Pulsed drain current: 11A
Power dissipation: 0.55W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN2310UWQ-7 DMN2310UWQ.pdf
DMN2310UWQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Pulsed drain current: 4.4A
Power dissipation: 0.55W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMN2310U-7 DMN2310U.pdf
DMN2310U-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 680mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Pulsed drain current: 4.8A
Power dissipation: 0.68W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN2310UW-7 DMN2310UW.pdf
DMN2310UW-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Pulsed drain current: 4.4A
Power dissipation: 0.55W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMBJ16CA-13-F SMBJ_ser.pdf
SMBJ16CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷20.5V; 23.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 1209 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
309+0.23 EUR
348+0.21 EUR
511+0.14 EUR
650+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 250
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SMCJ16CA-13-F SMCJ_ser.pdf
SMCJ16CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.8÷19.7V; 57.7A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 57.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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AP5724FDCG-7 AP5724.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 40mA; U-DFN2020-6; SMD
Operating temperature: -40...85°C
Mounting: SMD
Operating voltage: 2.7...5.5V DC
Frequency: 1...1.4MHz
Topology: boost
Kind of integrated circuit: DC/DC converter; LED driver
Type of integrated circuit: driver
Case: U-DFN2020-6
Integrated circuit features: PWM; soft-start function; UVLO (UnderVoltage LockOut)
Kind of package: reel; tape
Output current: 40mA
Produkt ist nicht verfügbar
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AP3401KTTR-G1 AP3401x-DTE.pdf
AP3401KTTR-G1
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT26
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.76 EUR
Mindestbestellmenge: 15
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DMN3401LDW-7 DMN3401LDW.pdf
DMN3401LDW-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2999 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
317+0.23 EUR
523+0.14 EUR
715+0.1 EUR
1000+0.089 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
DMG3406L-7 DMG3406L.pdf
DMG3406L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Power dissipation: 1.4W
Gate-source voltage: ±20V
auf Bestellung 1782 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
272+0.26 EUR
397+0.18 EUR
469+0.15 EUR
673+0.11 EUR
1000+0.093 EUR
Mindestbestellmenge: 193
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DMG3404L-7 DMG3404L.pdf
DMG3404L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.8A
Power dissipation: 1.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.1 EUR
Mindestbestellmenge: 34
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DMG3406L-13 DMG3406L.pdf
DMG3406L-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Power dissipation: 1.4W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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DMG3402LQ-7 DMG3402LQ.pdf
DMG3402LQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Gate charge: 11.7nC
On-state resistance: 85mΩ
Power dissipation: 1.4W
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
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DMG3401LSNQ-7 DMG3401LSNQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SC59
Polarisation: unipolar
Pulsed drain current: -30A
Drain-source voltage: -30V
Drain current: -2.9A
Gate charge: 25.1nC
On-state resistance: 85mΩ
Power dissipation: 1.2W
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
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