Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74818) > Seite 1189 nach 1247

Wählen Sie Seite:   [  << Vorherige Seite ]  1 124 248 372 496 620 744 868 992 1116 1184 1185 1186 1187 1188 1189 1190 1191 1192 1193 1194 1240 1247  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
BCX5416TA BCX5416TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BD11709F2591BF&compId=BCX54x-DTE.pdf?ci_sign=a6de10d206e214dd6aa6c975b3b2ed6b35926cdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 1483 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
232+0.31 EUR
338+0.21 EUR
400+0.18 EUR
562+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
FZT653TA FZT653TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C55A085CB3E749&compId=FZT653.pdf?ci_sign=2b3b5fa06f02aa9b5769f23391bfeceeda6faa60 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 2A; 3W; SOT223
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Collector current: 2A
Power dissipation: 3W
Collector-emitter voltage: 120V
Quantity in set/package: 1000pcs.
Frequency: 175MHz
Polarisation: bipolar
auf Bestellung 2042 Stücke:
Lieferzeit 14-21 Tag (e)
77+0.93 EUR
115+0.62 EUR
149+0.48 EUR
170+0.42 EUR
200+0.37 EUR
250+0.35 EUR
500+0.29 EUR
1000+0.28 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
DF04S-T DF04S-T DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED8469D2A7DEA18&compId=DF005_10S.pdf?ci_sign=30eda941a5f999695fd9671432c1e265c8f7bd8f Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.4kV
Load current: 1A
Case: DFS
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
auf Bestellung 657 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
162+0.44 EUR
200+0.36 EUR
274+0.26 EUR
343+0.21 EUR
500+0.19 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
DF08S-T DF08S-T DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED8469D2A7DEA18&compId=DF005_10S.pdf?ci_sign=30eda941a5f999695fd9671432c1e265c8f7bd8f Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.8kV
Load current: 1A
Case: DFS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
auf Bestellung 1185 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.77 EUR
114+0.63 EUR
136+0.53 EUR
187+0.38 EUR
271+0.26 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
SBR12A45SP5-13 DIODES INCORPORATED SBR12A45SP5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SBR®; SMD; 45V; 12A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 280A
Kind of package: reel; tape
Leakage current: 75mA
Capacitance: 1nF
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT3020LFDBQ-7 DIODES INCORPORATED DMT3020LFDBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Type of transistor: N-MOSFET
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6002LPS-13 DIODES INCORPORATED DMT6002LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 130.8nC
On-state resistance: 3mΩ
Power dissipation: 2.3W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6004LPS-13 DIODES INCORPORATED DMT6004LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 78.3nC
On-state resistance: 4.5mΩ
Power dissipation: 2.5W
Drain current: 16A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6004SCT DMT6004SCT DIODES INCORPORATED DMT6004SCT.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB
Case: TO220AB
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 113W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 180A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6004SPS-13 DIODES INCORPORATED DMT6004SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 2.6W
Drain current: 18A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6005LFG-13 DIODES INCORPORATED DMT6005LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 48.7nC
On-state resistance: 7mΩ
Power dissipation: 1.98W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6005LFG-7 DIODES INCORPORATED DMT6005LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 48.7nC
On-state resistance: 7mΩ
Power dissipation: 1.98W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6005LPS-13 DIODES INCORPORATED DMT6005LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 47.1nC
On-state resistance: 6.5mΩ
Power dissipation: 2.6W
Drain current: 14.7A
Gate-source voltage: ±20V
Pulsed drain current: 500A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6006LK3-13 DIODES INCORPORATED DMT6006LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 3.1W
Drain current: 71A
Gate-source voltage: ±20V
Pulsed drain current: 350A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6006LSS-13 DMT6006LSS-13 DIODES INCORPORATED DMT6006LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 2.08W
Drain current: 11.7A
Gate-source voltage: ±20V
Pulsed drain current: 110A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6006SPS-13 DIODES INCORPORATED DMT6006SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 27.9nC
On-state resistance: 6.2mΩ
Power dissipation: 2.45W
Drain current: 13A
Gate-source voltage: ±20V
Pulsed drain current: 390A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6007LFG-13 DIODES INCORPORATED DMT6007LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6007LFG-7 DMT6007LFG-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986CA8D3B828DD8BF&compId=DMT6007LFG.pdf?ci_sign=7389a1298bec0416047b0c9549696870fff63a3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 70A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
auf Bestellung 1851 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
79+0.91 EUR
85+0.84 EUR
101+0.71 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
DMT6007LFGQ-13 DIODES INCORPORATED DMT6007LFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6007LFGQ-7 DIODES INCORPORATED DMT6007LFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6008LFG-13 DIODES INCORPORATED DMT6008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6008LFG-7 DIODES INCORPORATED DMT6008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ30A-13-F SMBJ30A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 4630 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
257+0.28 EUR
472+0.15 EUR
633+0.11 EUR
1000+0.1 EUR
3000+0.093 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
AP2112K-1.2TRG1 AP2112K-1.2TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 0.6A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AP2112K-2.5TRG1 AP2112K-2.5TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT23-5; SMD
Kind of package: reel; tape
Case: SOT23-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Integrated circuit features: shutdown mode control input
Operating temperature: -40...85°C
Output current: 0.6A
Voltage drop: 0.4V
Number of channels: 1
Tolerance: ±1.5%
Output voltage: 2.5V
Input voltage: 2.5...6V
auf Bestellung 2930 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
385+0.19 EUR
435+0.16 EUR
511+0.14 EUR
625+0.11 EUR
685+0.1 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ58A-13-F SMAJ58A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 444 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
305+0.23 EUR
360+0.2 EUR
444+0.16 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
DMC3021LSD-13 DMC3021LSD-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B4177EE3A31BF&compId=DMC3021LSD-13.pdf?ci_sign=7077910c249d2c8319aabed39f68a0f2f03c40ef Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Case: SO8
Mounting: SMD
Polarisation: unipolar
Kind of package: 13 inch reel; tape
On-state resistance: 0.021/0.039Ω
Power dissipation: 2.5W
Drain current: 7/-8.5A
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
auf Bestellung 2521 Stücke:
Lieferzeit 14-21 Tag (e)
84+0.86 EUR
115+0.63 EUR
140+0.51 EUR
165+0.43 EUR
192+0.37 EUR
500+0.27 EUR
1000+0.24 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ6.5A-13-F SMAJ6.5A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2135 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
305+0.23 EUR
360+0.2 EUR
463+0.15 EUR
944+0.076 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
BSS127S-7 BSS127S-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE89687506DC41193D6&compId=BSS127.pdf?ci_sign=1b4252b7f94b0b9baf65855ac848bc81795752da Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 70mA
Power dissipation: 0.61W
Gate-source voltage: ±20V
On-state resistance: 160Ω
Drain-source voltage: 600V
Case: SOT23
Kind of package: 7 inch reel; tape
auf Bestellung 2386 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
193+0.37 EUR
225+0.32 EUR
350+0.2 EUR
421+0.17 EUR
610+0.12 EUR
1000+0.1 EUR
1500+0.097 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ58A-13-F SMBJ58A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2415 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
424+0.17 EUR
477+0.15 EUR
575+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
74HCT125S14-13 74HCT125S14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BDEE84ACC787FE28&compId=74HCT125.pdf?ci_sign=b2710fdd7dd813821e64714a6d876941697c7a16 Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; SO14; HCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Kind of output: 3-state
Manufacturer series: HCT
Quiescent current: 40µA
auf Bestellung 1689 Stücke:
Lieferzeit 14-21 Tag (e)
343+0.21 EUR
500+0.14 EUR
569+0.13 EUR
633+0.11 EUR
Mindestbestellmenge: 343
Im Einkaufswagen  Stück im Wert von  UAH
TL431ASA-7 TL431ASA-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C1EC6641A70749&compId=TL431_432.pdf?ci_sign=3f0dda2ef89169274a30817f84e82be5183f4121 Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 2902 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
348+0.21 EUR
397+0.18 EUR
468+0.15 EUR
575+0.12 EUR
633+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
PAM8902HKER DIODES INCORPORATED PAM8902H.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 1; Amp.class: D; QFN16; 2.5÷5.5VDC
Operating temperature: -40...125°C
Voltage supply range: 2.5...5.5V DC
Kind of package: reel; tape
Amplifier class: D
Case: QFN16
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8904EGPR DIODES INCORPORATED PAM8904E.pdf Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; WQFN12; Ch: 1; 1.5÷5.5VDC
Operating temperature: -40...150°C
Voltage supply range: 1.5...5.5V DC
Kind of package: reel; tape
Case: WQFN12
Kind of integrated circuit: piezo sounder
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8904EJER DIODES INCORPORATED PAM8904E.pdf Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; Ch: 1; 1.5÷5.5VDC
Operating temperature: -40...150°C
Voltage supply range: 1.5...5.5V DC
Kind of package: reel; tape
Case: UQFN16
Kind of integrated circuit: piezo sounder
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8904EJPR DIODES INCORPORATED PAM8904E.pdf Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.5÷5.5VDC
Case: UQFN12
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Voltage supply range: 1.5...5.5V DC
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8904JER DIODES INCORPORATED PAM8904.pdf Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; Ch: 1; 2.3÷5.5VDC
Case: UQFN16
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Number of channels: 1
Voltage supply range: 2.3...5.5V DC
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8904JPR DIODES INCORPORATED PAM8904.pdf Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.8÷5.5VDC
Operating temperature: -40...150°C
Voltage supply range: 1.8...5.5V DC
Kind of package: reel; tape
Case: UQFN12
Kind of integrated circuit: piezo sounder
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8904QJER DIODES INCORPORATED PAM8904Q.pdf Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; Ch: 1; 2.3÷5VDC
Case: UQFN16
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Voltage supply range: 2.3...5V DC
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8907SB10-7 DIODES INCORPORATED PAM8907.pdf Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN10; Ch: 1; 1.8÷5.5VDC
Operating temperature: -40...150°C
Voltage supply range: 1.8...5.5V DC
Kind of package: reel; tape
Case: UQFN10
Kind of integrated circuit: piezo sounder
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8908JER DIODES INCORPORATED PAM8908.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 25mW; headphone driver,stereo; Ch: 2
Integrated circuit features: headphone driver; stereo
Case: UQFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output power: 25mW
Number of channels: 2
Voltage supply range: 2.5...5.5V DC
Amplifier class: AB
Type of integrated circuit: audio amplifier
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HD06-T HD06-T DIODES INCORPORATED HD01.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.8A; Ifsm: 30A; MiniDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 30A
Electrical mounting: SMT
Case: MiniDIP
Kind of package: reel; tape
auf Bestellung 1854 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.63 EUR
172+0.42 EUR
295+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 114
Im Einkaufswagen  Stück im Wert von  UAH
AP63300WU-7 AP63300WU-7 DIODES INCORPORATED AP63300-AP63301.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 0.8÷31VDC; 3A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 0.8...31V DC
Output current: 3A
Case: TSOT26
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 96%
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G125SE-7 74LVC1G125SE-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BDEE9CD98F283E28&compId=74LVC1G125.pdf?ci_sign=289f95504f19636ce556088668dafcb5c1ad723c Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Manufacturer series: LVC
auf Bestellung 2370 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
782+0.092 EUR
893+0.08 EUR
1034+0.069 EUR
1235+0.058 EUR
1359+0.053 EUR
1446+0.049 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G125W5-7 74LVC1G125W5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BDEE9CD98F283E28&compId=74LVC1G125.pdf?ci_sign=289f95504f19636ce556088668dafcb5c1ad723c Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Manufacturer series: LVC
auf Bestellung 2570 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
481+0.15 EUR
544+0.13 EUR
642+0.11 EUR
794+0.09 EUR
878+0.082 EUR
926+0.077 EUR
1000+0.074 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BSP75NTA BSP75NTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED7DD374A18CA18&compId=BSP75N.pdf?ci_sign=bccd45120620806be7065e1ff763677679ced90b Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Output current: 1.3A
Mounting: SMD
Kind of integrated circuit: low-side
Kind of output: N-Channel
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
On-state resistance: 0.55Ω
Number of channels: 1
Control voltage: 60V DC
Case: SOT223
Type of integrated circuit: power switch
auf Bestellung 469 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.19 EUR
96+0.75 EUR
102+0.71 EUR
109+0.66 EUR
121+0.59 EUR
135+0.53 EUR
250+0.49 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
ZTL431BFTA ZTL431BFTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84F31562F17F20C7&compId=ZTL431%2C432.pdf?ci_sign=00774d159c42e48604be9d430ea0ab015390bded Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 11878 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
213+0.34 EUR
278+0.26 EUR
363+0.2 EUR
500+0.17 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
BAS40-06-7-F BAS40-06-7-F DIODES INCORPORATED BAS40_-04_-05_-06.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ28A-13-F DIODES INCORPORATED ds19002.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP2104LP-7 DMP2104LP-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FDAEA7270A1C745&compId=DMP2104LP-7.pdf?ci_sign=af427ae3d00f7dc28035e245d07cfdece14a580a Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; 0.5W; DFN1411-3
Case: DFN1411-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.2A
On-state resistance: 0.24Ω
Power dissipation: 0.5W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
auf Bestellung 1458 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
180+0.4 EUR
253+0.28 EUR
336+0.21 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
DMP2120U-7 DMP2120U-7 DIODES INCORPORATED DMP2120U.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 0.8W; SOT23
Type of transistor: P-MOSFET
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -20A
Drain-source voltage: -20V
Drain current: -3A
On-state resistance: 62mΩ
Power dissipation: 0.8W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 1437 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
278+0.26 EUR
332+0.22 EUR
581+0.12 EUR
669+0.11 EUR
733+0.098 EUR
881+0.081 EUR
1040+0.069 EUR
1080+0.066 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
DMP2130L-7 DMP2130L-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E0A42AD2C2F8BF&compId=DMP2130L.pdf?ci_sign=177e725db612c457d2b7427e4bf3b00ae6963a36 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1.4W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
On-state resistance: 0.125Ω
Power dissipation: 1.4W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
167+0.43 EUR
194+0.37 EUR
341+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
DMP2130LDM-7 DMP2130LDM-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E0AFB5538E58BF&compId=DMP2130LDM.pdf?ci_sign=e090a3efb3f417bfe0853c074481984c922ac302 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; 1.25W; SOT26
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT26
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
On-state resistance: 0.13Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCX54TA BCX54TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BD11709F2591BF&compId=BCX54x-DTE.pdf?ci_sign=a6de10d206e214dd6aa6c975b3b2ed6b35926cdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 987 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
216+0.33 EUR
315+0.23 EUR
374+0.19 EUR
538+0.13 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
FMMT625TA FMMT625TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531ED99E8D92E3B6F67820&compId=FMMT625.pdf?ci_sign=438e4058320be4e643adf6fe52b61a6fa43c0144 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 1A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1A
Power dissipation: 0.625W
Case: SOT23
Current gain: 15...400
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 135MHz
auf Bestellung 1960 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
130+0.55 EUR
217+0.33 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
BCX5310TA BCX5310TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BEC3C889FBB3D1&compId=BCX51_52_53.pdf?ci_sign=8792a8d94e47e33071c157a1b519cb1a9a90c54e Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 63...160
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 2764 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
218+0.33 EUR
246+0.29 EUR
435+0.16 EUR
650+0.11 EUR
1000+0.096 EUR
2000+0.084 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
BCX5316TA BCX5316TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BEC3C889FBB3D1&compId=BCX51_52_53.pdf?ci_sign=8792a8d94e47e33071c157a1b519cb1a9a90c54e Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 631 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
266+0.27 EUR
400+0.18 EUR
478+0.15 EUR
592+0.12 EUR
631+0.11 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
BCX53TA BCX53TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BEC3C889FBB3D1&compId=BCX51_52_53.pdf?ci_sign=8792a8d94e47e33071c157a1b519cb1a9a90c54e Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 1730 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
265+0.27 EUR
327+0.22 EUR
455+0.16 EUR
650+0.11 EUR
1000+0.097 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
BCX53TC BCX53TC DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8016AKR DIODES INCORPORATED PAM8016.pdf Category: Motor and PWM drivers
Description: IC: driver; H-bridge; haptic motor controller; PWM; U-FLGA1515-9
Interface: PWM
Operating voltage: 2.8...5.5V DC
Mounting: SMD
Operating temperature: -25...85°C
Type of integrated circuit: driver
Case: U-FLGA1515-9
Integrated circuit features: Eccentric Rotating Mass (ERM); Linear Resonance Acutator (LRA)
Kind of integrated circuit: haptic motor controller
Application: haptic motors; linear actuator; servos
Topology: H-bridge
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCX5416TA pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BD11709F2591BF&compId=BCX54x-DTE.pdf?ci_sign=a6de10d206e214dd6aa6c975b3b2ed6b35926cdf
BCX5416TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 1483 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
232+0.31 EUR
338+0.21 EUR
400+0.18 EUR
562+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
FZT653TA pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C55A085CB3E749&compId=FZT653.pdf?ci_sign=2b3b5fa06f02aa9b5769f23391bfeceeda6faa60
FZT653TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 2A; 3W; SOT223
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Collector current: 2A
Power dissipation: 3W
Collector-emitter voltage: 120V
Quantity in set/package: 1000pcs.
Frequency: 175MHz
Polarisation: bipolar
auf Bestellung 2042 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
115+0.62 EUR
149+0.48 EUR
170+0.42 EUR
200+0.37 EUR
250+0.35 EUR
500+0.29 EUR
1000+0.28 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
DF04S-T pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED8469D2A7DEA18&compId=DF005_10S.pdf?ci_sign=30eda941a5f999695fd9671432c1e265c8f7bd8f
DF04S-T
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.4kV
Load current: 1A
Case: DFS
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
auf Bestellung 657 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
162+0.44 EUR
200+0.36 EUR
274+0.26 EUR
343+0.21 EUR
500+0.19 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
DF08S-T pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED8469D2A7DEA18&compId=DF005_10S.pdf?ci_sign=30eda941a5f999695fd9671432c1e265c8f7bd8f
DF08S-T
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.8kV
Load current: 1A
Case: DFS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
auf Bestellung 1185 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
114+0.63 EUR
136+0.53 EUR
187+0.38 EUR
271+0.26 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
SBR12A45SP5-13 SBR12A45SP5.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SBR®; SMD; 45V; 12A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 280A
Kind of package: reel; tape
Leakage current: 75mA
Capacitance: 1nF
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT3020LFDBQ-7 DMT3020LFDBQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Type of transistor: N-MOSFET
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6002LPS-13 DMT6002LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 130.8nC
On-state resistance: 3mΩ
Power dissipation: 2.3W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6004LPS-13 DMT6004LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 78.3nC
On-state resistance: 4.5mΩ
Power dissipation: 2.5W
Drain current: 16A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6004SCT DMT6004SCT.pdf
DMT6004SCT
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB
Case: TO220AB
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 113W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 180A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6004SPS-13 DMT6004SPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 2.6W
Drain current: 18A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6005LFG-13 DMT6005LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 48.7nC
On-state resistance: 7mΩ
Power dissipation: 1.98W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6005LFG-7 DMT6005LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 48.7nC
On-state resistance: 7mΩ
Power dissipation: 1.98W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6005LPS-13 DMT6005LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 47.1nC
On-state resistance: 6.5mΩ
Power dissipation: 2.6W
Drain current: 14.7A
Gate-source voltage: ±20V
Pulsed drain current: 500A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6006LK3-13 DMT6006LK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 3.1W
Drain current: 71A
Gate-source voltage: ±20V
Pulsed drain current: 350A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6006LSS-13 DMT6006LSS.pdf
DMT6006LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 2.08W
Drain current: 11.7A
Gate-source voltage: ±20V
Pulsed drain current: 110A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6006SPS-13 DMT6006SPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 27.9nC
On-state resistance: 6.2mΩ
Power dissipation: 2.45W
Drain current: 13A
Gate-source voltage: ±20V
Pulsed drain current: 390A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6007LFG-13 DMT6007LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6007LFG-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986CA8D3B828DD8BF&compId=DMT6007LFG.pdf?ci_sign=7389a1298bec0416047b0c9549696870fff63a3a
DMT6007LFG-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 70A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
auf Bestellung 1851 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
79+0.91 EUR
85+0.84 EUR
101+0.71 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
DMT6007LFGQ-13 DMT6007LFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6007LFGQ-7 DMT6007LFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6008LFG-13 DMT6008LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6008LFG-7 DMT6008LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ30A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ30A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 4630 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
257+0.28 EUR
472+0.15 EUR
633+0.11 EUR
1000+0.1 EUR
3000+0.093 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
AP2112K-1.2TRG1 AP2112.pdf
AP2112K-1.2TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 0.6A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AP2112K-2.5TRG1 AP2112.pdf
AP2112K-2.5TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT23-5; SMD
Kind of package: reel; tape
Case: SOT23-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Integrated circuit features: shutdown mode control input
Operating temperature: -40...85°C
Output current: 0.6A
Voltage drop: 0.4V
Number of channels: 1
Tolerance: ±1.5%
Output voltage: 2.5V
Input voltage: 2.5...6V
auf Bestellung 2930 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
385+0.19 EUR
435+0.16 EUR
511+0.14 EUR
625+0.11 EUR
685+0.1 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ58A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ58A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 444 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
305+0.23 EUR
360+0.2 EUR
444+0.16 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
DMC3021LSD-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B4177EE3A31BF&compId=DMC3021LSD-13.pdf?ci_sign=7077910c249d2c8319aabed39f68a0f2f03c40ef
DMC3021LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Case: SO8
Mounting: SMD
Polarisation: unipolar
Kind of package: 13 inch reel; tape
On-state resistance: 0.021/0.039Ω
Power dissipation: 2.5W
Drain current: 7/-8.5A
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
auf Bestellung 2521 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
115+0.63 EUR
140+0.51 EUR
165+0.43 EUR
192+0.37 EUR
500+0.27 EUR
1000+0.24 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ6.5A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ6.5A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2135 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
305+0.23 EUR
360+0.2 EUR
463+0.15 EUR
944+0.076 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
BSS127S-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89687506DC41193D6&compId=BSS127.pdf?ci_sign=1b4252b7f94b0b9baf65855ac848bc81795752da
BSS127S-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 70mA
Power dissipation: 0.61W
Gate-source voltage: ±20V
On-state resistance: 160Ω
Drain-source voltage: 600V
Case: SOT23
Kind of package: 7 inch reel; tape
auf Bestellung 2386 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
193+0.37 EUR
225+0.32 EUR
350+0.2 EUR
421+0.17 EUR
610+0.12 EUR
1000+0.1 EUR
1500+0.097 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ58A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ58A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2415 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
424+0.17 EUR
477+0.15 EUR
575+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
74HCT125S14-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BDEE84ACC787FE28&compId=74HCT125.pdf?ci_sign=b2710fdd7dd813821e64714a6d876941697c7a16
74HCT125S14-13
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; SO14; HCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Kind of output: 3-state
Manufacturer series: HCT
Quiescent current: 40µA
auf Bestellung 1689 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
343+0.21 EUR
500+0.14 EUR
569+0.13 EUR
633+0.11 EUR
Mindestbestellmenge: 343
Im Einkaufswagen  Stück im Wert von  UAH
TL431ASA-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C1EC6641A70749&compId=TL431_432.pdf?ci_sign=3f0dda2ef89169274a30817f84e82be5183f4121
TL431ASA-7
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 2902 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
348+0.21 EUR
397+0.18 EUR
468+0.15 EUR
575+0.12 EUR
633+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
PAM8902HKER PAM8902H.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 1; Amp.class: D; QFN16; 2.5÷5.5VDC
Operating temperature: -40...125°C
Voltage supply range: 2.5...5.5V DC
Kind of package: reel; tape
Amplifier class: D
Case: QFN16
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8904EGPR PAM8904E.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; WQFN12; Ch: 1; 1.5÷5.5VDC
Operating temperature: -40...150°C
Voltage supply range: 1.5...5.5V DC
Kind of package: reel; tape
Case: WQFN12
Kind of integrated circuit: piezo sounder
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8904EJER PAM8904E.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; Ch: 1; 1.5÷5.5VDC
Operating temperature: -40...150°C
Voltage supply range: 1.5...5.5V DC
Kind of package: reel; tape
Case: UQFN16
Kind of integrated circuit: piezo sounder
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8904EJPR PAM8904E.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.5÷5.5VDC
Case: UQFN12
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Voltage supply range: 1.5...5.5V DC
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8904JER PAM8904.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; Ch: 1; 2.3÷5.5VDC
Case: UQFN16
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Number of channels: 1
Voltage supply range: 2.3...5.5V DC
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8904JPR PAM8904.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.8÷5.5VDC
Operating temperature: -40...150°C
Voltage supply range: 1.8...5.5V DC
Kind of package: reel; tape
Case: UQFN12
Kind of integrated circuit: piezo sounder
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8904QJER PAM8904Q.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; Ch: 1; 2.3÷5VDC
Case: UQFN16
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Voltage supply range: 2.3...5V DC
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8907SB10-7 PAM8907.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN10; Ch: 1; 1.8÷5.5VDC
Operating temperature: -40...150°C
Voltage supply range: 1.8...5.5V DC
Kind of package: reel; tape
Case: UQFN10
Kind of integrated circuit: piezo sounder
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8908JER PAM8908.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 25mW; headphone driver,stereo; Ch: 2
Integrated circuit features: headphone driver; stereo
Case: UQFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output power: 25mW
Number of channels: 2
Voltage supply range: 2.5...5.5V DC
Amplifier class: AB
Type of integrated circuit: audio amplifier
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HD06-T HD01.pdf
HD06-T
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.8A; Ifsm: 30A; MiniDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 30A
Electrical mounting: SMT
Case: MiniDIP
Kind of package: reel; tape
auf Bestellung 1854 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
172+0.42 EUR
295+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 114
Im Einkaufswagen  Stück im Wert von  UAH
AP63300WU-7 AP63300-AP63301.pdf
AP63300WU-7
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 0.8÷31VDC; 3A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 0.8...31V DC
Output current: 3A
Case: TSOT26
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 96%
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G125SE-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BDEE9CD98F283E28&compId=74LVC1G125.pdf?ci_sign=289f95504f19636ce556088668dafcb5c1ad723c
74LVC1G125SE-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Manufacturer series: LVC
auf Bestellung 2370 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
782+0.092 EUR
893+0.08 EUR
1034+0.069 EUR
1235+0.058 EUR
1359+0.053 EUR
1446+0.049 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G125W5-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BDEE9CD98F283E28&compId=74LVC1G125.pdf?ci_sign=289f95504f19636ce556088668dafcb5c1ad723c
74LVC1G125W5-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Manufacturer series: LVC
auf Bestellung 2570 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
481+0.15 EUR
544+0.13 EUR
642+0.11 EUR
794+0.09 EUR
878+0.082 EUR
926+0.077 EUR
1000+0.074 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BSP75NTA pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED7DD374A18CA18&compId=BSP75N.pdf?ci_sign=bccd45120620806be7065e1ff763677679ced90b
BSP75NTA
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Output current: 1.3A
Mounting: SMD
Kind of integrated circuit: low-side
Kind of output: N-Channel
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
On-state resistance: 0.55Ω
Number of channels: 1
Control voltage: 60V DC
Case: SOT223
Type of integrated circuit: power switch
auf Bestellung 469 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
96+0.75 EUR
102+0.71 EUR
109+0.66 EUR
121+0.59 EUR
135+0.53 EUR
250+0.49 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
ZTL431BFTA pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84F31562F17F20C7&compId=ZTL431%2C432.pdf?ci_sign=00774d159c42e48604be9d430ea0ab015390bded
ZTL431BFTA
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 11878 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
213+0.34 EUR
278+0.26 EUR
363+0.2 EUR
500+0.17 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
BAS40-06-7-F BAS40_-04_-05_-06.pdf
BAS40-06-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ28A-13-F ds19002.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP2104LP-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FDAEA7270A1C745&compId=DMP2104LP-7.pdf?ci_sign=af427ae3d00f7dc28035e245d07cfdece14a580a
DMP2104LP-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; 0.5W; DFN1411-3
Case: DFN1411-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.2A
On-state resistance: 0.24Ω
Power dissipation: 0.5W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
auf Bestellung 1458 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
180+0.4 EUR
253+0.28 EUR
336+0.21 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
DMP2120U-7 DMP2120U.pdf
DMP2120U-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 0.8W; SOT23
Type of transistor: P-MOSFET
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -20A
Drain-source voltage: -20V
Drain current: -3A
On-state resistance: 62mΩ
Power dissipation: 0.8W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 1437 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
278+0.26 EUR
332+0.22 EUR
581+0.12 EUR
669+0.11 EUR
733+0.098 EUR
881+0.081 EUR
1040+0.069 EUR
1080+0.066 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
DMP2130L-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E0A42AD2C2F8BF&compId=DMP2130L.pdf?ci_sign=177e725db612c457d2b7427e4bf3b00ae6963a36
DMP2130L-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1.4W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
On-state resistance: 0.125Ω
Power dissipation: 1.4W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
167+0.43 EUR
194+0.37 EUR
341+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
DMP2130LDM-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E0AFB5538E58BF&compId=DMP2130LDM.pdf?ci_sign=e090a3efb3f417bfe0853c074481984c922ac302
DMP2130LDM-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; 1.25W; SOT26
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT26
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
On-state resistance: 0.13Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCX54TA pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BD11709F2591BF&compId=BCX54x-DTE.pdf?ci_sign=a6de10d206e214dd6aa6c975b3b2ed6b35926cdf
BCX54TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 987 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
216+0.33 EUR
315+0.23 EUR
374+0.19 EUR
538+0.13 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
FMMT625TA pVersion=0046&contRep=ZT&docId=005056AB82531ED99E8D92E3B6F67820&compId=FMMT625.pdf?ci_sign=438e4058320be4e643adf6fe52b61a6fa43c0144
FMMT625TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 1A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1A
Power dissipation: 0.625W
Case: SOT23
Current gain: 15...400
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 135MHz
auf Bestellung 1960 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
130+0.55 EUR
217+0.33 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
BCX5310TA pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BEC3C889FBB3D1&compId=BCX51_52_53.pdf?ci_sign=8792a8d94e47e33071c157a1b519cb1a9a90c54e
BCX5310TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 63...160
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 2764 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
218+0.33 EUR
246+0.29 EUR
435+0.16 EUR
650+0.11 EUR
1000+0.096 EUR
2000+0.084 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
BCX5316TA pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BEC3C889FBB3D1&compId=BCX51_52_53.pdf?ci_sign=8792a8d94e47e33071c157a1b519cb1a9a90c54e
BCX5316TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 631 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
266+0.27 EUR
400+0.18 EUR
478+0.15 EUR
592+0.12 EUR
631+0.11 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
BCX53TA pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BEC3C889FBB3D1&compId=BCX51_52_53.pdf?ci_sign=8792a8d94e47e33071c157a1b519cb1a9a90c54e
BCX53TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 1730 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
265+0.27 EUR
327+0.22 EUR
455+0.16 EUR
650+0.11 EUR
1000+0.097 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
BCX53TC
BCX53TC
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8016AKR PAM8016.pdf
Hersteller: DIODES INCORPORATED
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; haptic motor controller; PWM; U-FLGA1515-9
Interface: PWM
Operating voltage: 2.8...5.5V DC
Mounting: SMD
Operating temperature: -25...85°C
Type of integrated circuit: driver
Case: U-FLGA1515-9
Integrated circuit features: Eccentric Rotating Mass (ERM); Linear Resonance Acutator (LRA)
Kind of integrated circuit: haptic motor controller
Application: haptic motors; linear actuator; servos
Topology: H-bridge
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 124 248 372 496 620 744 868 992 1116 1184 1185 1186 1187 1188 1189 1190 1191 1192 1193 1194 1240 1247  [ Nächste Seite >> ]