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BAW56T-7-F BAW56T-7-F DIODES INCORPORATED BAW56T.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 75mA; 4ns; SOT523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 75mA
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Capacitance: 1.5pF
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Features of semiconductor devices: small signal
auf Bestellung 684 Stücke:
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250+0.29 EUR
358+0.2 EUR
684+0.1 EUR
Mindestbestellmenge: 250
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BAW56W-7-F
+1
 		BAW56W-7-F DIODES INCORPORATED BAW56W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT323; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT323
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
Features of semiconductor devices: small signal
auf Bestellung 2798 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
782+0.092 EUR
926+0.077 EUR
1421+0.05 EUR
2058+0.035 EUR
2337+0.031 EUR
Mindestbestellmenge: 625
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BAS16LP-7 BAS16LP-7 DIODES INCORPORATED BAS16LP.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; DFN2; Ufmax: 1.25V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DFN2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 95 Stücke:
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95+0.76 EUR
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AL5801W6-7 AL5801W6-7 DIODES INCORPORATED AL5801.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 350mA; Ch: 1; PWM
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Output current: 0.35A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 5...100V DC
Integrated circuit features: PWM
auf Bestellung 769 Stücke:
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157+0.46 EUR
222+0.32 EUR
242+0.3 EUR
256+0.28 EUR
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BC846BW-7-F BC846BW-7-F DIODES INCORPORATED BC846_7_8W.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
auf Bestellung 1498 Stücke:
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556+0.13 EUR
625+0.11 EUR
953+0.075 EUR
1475+0.048 EUR
1498+0.047 EUR
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LM2903QS-13 LM2903QS-13 DIODES INCORPORATED LM290xxQ.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 200nA
Input offset current: 200nA
Input offset voltage: 15mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
Kind of output: open collector
Type of integrated circuit: comparator
Case: SO8
Kind of comparator: universal
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
auf Bestellung 2292 Stücke:
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417+0.17 EUR
575+0.12 EUR
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BAT54AW-7-F BAT54AW-7-F DIODES INCORPORATED BAT54W_AW_CW_SW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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DMT6009LCT DIODES INCORPORATED DMT6009LCT.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 14.5mΩ
Power dissipation: 2.2W
Drain current: 29.8A
Gate-source voltage: ±16V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6009LFG-13 DIODES INCORPORATED DMT6009LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 11.7mΩ
Power dissipation: 2.08W
Drain current: 9A
Gate-source voltage: ±16V
Pulsed drain current: 90A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6009LK3-13 DIODES INCORPORATED DMT6009LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12.8mΩ
Power dissipation: 2.6W
Drain current: 10.6A
Gate-source voltage: ±16V
Pulsed drain current: 90A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6009LPS-13 DIODES INCORPORATED DMT6009LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 2.3W
Drain current: 9.1A
Gate-source voltage: ±16V
Pulsed drain current: 160A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6009LSS-13 DMT6009LSS-13 DIODES INCORPORATED DMT6009LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 1.6W
Drain current: 11.5A
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6010LFG-13 DIODES INCORPORATED DMT6010LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 25A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6010LFG-7 DIODES INCORPORATED DMT6010LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6010LPS-13 DIODES INCORPORATED DMT6010LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 12mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 125A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6011LSS-13 DMT6011LSS-13 DIODES INCORPORATED DMT6011LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14.5mΩ
Power dissipation: 2.1W
Drain current: 8.5A
Gate-source voltage: ±20V
Pulsed drain current: 85A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6012LSS-13 DMT6012LSS-13 DIODES INCORPORATED DMT6012LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14mΩ
Power dissipation: 1.84W
Drain current: 8.4A
Gate-source voltage: ±20V
Pulsed drain current: 65A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BC847CQ-7-F BC847CQ-7-F DIODES INCORPORATED ds11108.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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BC847CT-7-F BC847CT-7-F DIODES INCORPORATED BC847xT.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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BC847CW-13-F BC847CW-13-F DIODES INCORPORATED BC846_7_8W.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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BC847CW-7-F BC847CW-7-F DIODES INCORPORATED BC846_7_8W.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
auf Bestellung 5543 Stücke:
Lieferzeit 14-21 Tag (e)
834+0.086 EUR
Mindestbestellmenge: 834
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BAT54SW-13-F BAT54SW-13-F DIODES INCORPORATED BAT54W_AW_CW_SW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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BAT54SW-7-F
+1
 		BAT54SW-7-F DIODES INCORPORATED BAT54W_AW_CW_SW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 0.6A
auf Bestellung 5889 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
486+0.15 EUR
975+0.073 EUR
1563+0.046 EUR
1873+0.038 EUR
3000+0.031 EUR
Mindestbestellmenge: 334
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BAT54SWQ-7-F BAT54SWQ-7-F DIODES INCORPORATED SWQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 80 Stücke:
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80+0.89 EUR
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BC847BT-7-F BC847BT-7-F DIODES INCORPORATED BC847xT.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 8548 Stücke:
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455+0.16 EUR
715+0.1 EUR
1038+0.069 EUR
1247+0.057 EUR
2128+0.034 EUR
2891+0.025 EUR
Mindestbestellmenge: 455
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BAV99Q-13-F BAV99Q-13-F DIODES INCORPORATED BAV99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
auf Bestellung 24 Stücke:
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BAV99T-7-F BAV99T-7-F DIODES INCORPORATED BAS16T_BAW56T_BAV70T_BAV99T.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 2538 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
521+0.14 EUR
569+0.13 EUR
779+0.092 EUR
1040+0.069 EUR
1208+0.059 EUR
Mindestbestellmenge: 417
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SMBJ12CA-13-F SMBJ12CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1204 Stücke:
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193+0.37 EUR
239+0.3 EUR
272+0.26 EUR
443+0.16 EUR
610+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 193
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HD01-T HD01-T DIODES INCORPORATED HD01.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 0.8A; Ifsm: 30A; MiniDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 0.8A
Max. forward impulse current: 30A
Case: MiniDIP
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 1869 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
153+0.47 EUR
177+0.41 EUR
321+0.22 EUR
500+0.15 EUR
Mindestbestellmenge: 125
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BAT54AWQ-7-F BAT54AWQ-7-F DIODES INCORPORATED SWQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
Produkt ist nicht verfügbar
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ZTL431AQFTA ZTL431AQFTA DIODES INCORPORATED ZTL431,432.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
341+0.21 EUR
385+0.19 EUR
447+0.16 EUR
481+0.15 EUR
506+0.14 EUR
Mindestbestellmenge: 228
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LMV358M8G-13 LMV358M8G-13 DIODES INCORPORATED LMV321_358.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; Uoper: 2.7÷5.5V; MSOP8; 10dB
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Operating voltage: 2.7...5.5V
Mounting: SMT
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 1V/μs
Open-loop gain: 10dB
Integrated circuit features: rail-to-rail output
Input offset voltage: 7mV
Kind of package: reel; tape
auf Bestellung 2295 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
240+0.3 EUR
271+0.26 EUR
327+0.22 EUR
336+0.21 EUR
371+0.19 EUR
500+0.17 EUR
Mindestbestellmenge: 173
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ZTL432AFTA ZTL432AFTA DIODES INCORPORATED ZTL431,432.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 1542 Stücke:
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228+0.31 EUR
343+0.21 EUR
385+0.19 EUR
455+0.16 EUR
Mindestbestellmenge: 228
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DMT3020LFDB-13 DIODES INCORPORATED DMT3020LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDB-7 DIODES INCORPORATED DMT3020LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDBQ-13 DIODES INCORPORATED DMT3020LFDBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDF-13 DIODES INCORPORATED DMT3020LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDF-7 DIODES INCORPORATED DMT3020LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDFQ-13 DIODES INCORPORATED DMT3020LFDFQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 0.4W
Drain current: 6.7A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDFQ-7 DIODES INCORPORATED DMT3020LFDFQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LSDQ-13 DMT3020LSDQ-13 DIODES INCORPORATED DMT3020LSDQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.5W
Drain current: 13A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020UFDB-13 DIODES INCORPORATED DMT3020UFDB.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±12V
Gate charge: 8.8nC
On-state resistance: 30mΩ
Power dissipation: 1.3W
Drain current: 5.2A
Drain-source voltage: 30V
Pulsed drain current: 35A
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
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DMT30M9LPS-13 DIODES INCORPORATED DMT30M9LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 160.5nC
On-state resistance: 1.6mΩ
Power dissipation: 2.6W
Drain current: 100A
Drain-source voltage: 30V
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BC857BT-7-F BC857BT-7-F DIODES INCORPORATED BC857T.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 6165 Stücke:
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569+0.13 EUR
969+0.074 EUR
1370+0.052 EUR
1563+0.046 EUR
3000+0.038 EUR
6000+0.034 EUR
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BC857BW-7-F BC857BW-7-F DIODES INCORPORATED BC856AW-BC858CW.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel
Frequency: 200MHz
Quantity in set/package: 3000pcs.
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ADTC114EUAQ-7 ADTC114EUAQ-7 DIODES INCORPORATED ADTC114EUAQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 330mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 30
Quantity in set/package: 3000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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DDTC114EUA-7-F DDTC114EUA-7-F DIODES INCORPORATED DDTCxxxUA.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Frequency: 250MHz
auf Bestellung 4739 Stücke:
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511+0.14 EUR
794+0.09 EUR
953+0.075 EUR
1323+0.054 EUR
2067+0.035 EUR
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DMMT3904W-7-F DMMT3904W-7-F DIODES INCORPORATED DMMT3904W.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Type of transistor: NPN x2
Case: SOT363
Collector current: 0.2A
Power dissipation: 0.2W
Current gain: 30...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
Mounting: SMD
auf Bestellung 2949 Stücke:
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258+0.28 EUR
374+0.19 EUR
443+0.16 EUR
633+0.11 EUR
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DMP4015SK3Q-13 DMP4015SK3Q-13 DIODES INCORPORATED DMP4015SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; 3.5W; TO252
Case: TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -30A
On-state resistance: 15mΩ
Power dissipation: 3.5W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Application: automotive industry
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70+1.03 EUR
103+0.7 EUR
500+0.55 EUR
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DMP4015SSSQ-13 DMP4015SSSQ-13 DIODES INCORPORATED DMP4015SSSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.8A; 1.45W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.8A
On-state resistance: 15mΩ
Power dissipation: 1.45W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Application: automotive industry
auf Bestellung 2037 Stücke:
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57+1.26 EUR
100+0.82 EUR
250+0.78 EUR
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74LVC1G17SE-7 74LVC1G17SE-7 DIODES INCORPORATED 74LVC1G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Kind of input: with Schmitt trigger
Kind of output: push-pull
Manufacturer series: LVC
auf Bestellung 924 Stücke:
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807+0.089 EUR
924+0.077 EUR
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74LVC1G17W5-7 74LVC1G17W5-7 DIODES INCORPORATED 74LVC1G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Kind of input: with Schmitt trigger
Kind of output: push-pull
Manufacturer series: LVC
auf Bestellung 2426 Stücke:
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556+0.13 EUR
715+0.1 EUR
807+0.089 EUR
955+0.075 EUR
1200+0.06 EUR
1334+0.054 EUR
1417+0.05 EUR
1489+0.048 EUR
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PAM2863ECR PAM2863ECR DIODES INCORPORATED PAM2863.pdf Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 2A; SOP8; SMD; Ch: 1; reel,tape
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Output current: 2A
Number of channels: 1
Operating voltage: 4.5...40V DC
Kind of integrated circuit: DC/DC converter; LED driver
Type of integrated circuit: driver
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82+0.87 EUR
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SBR10U300CT SBR10U300CT DIODES INCORPORATED SBR10U300.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 300V; 10A; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.92V
Max. forward impulse current: 150A
Technology: SBR®
Kind of package: tube
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41+1.77 EUR
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SBR40U300CT SBR40U300CT DIODES INCORPORATED SBR40U300CT.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 300V; 20Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.89V
Max. forward impulse current: 235A
Technology: SBR®
Kind of package: tube
auf Bestellung 49 Stücke:
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31+2.36 EUR
33+2.19 EUR
36+1.99 EUR
40+1.83 EUR
44+1.66 EUR
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AP2202K-3.3TRE1 AP2202K-3.3TRE1 DIODES INCORPORATED AP2202.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2202
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
Integrated circuit features: shutdown mode control input
auf Bestellung 2390 Stücke:
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334+0.21 EUR
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562+0.13 EUR
676+0.11 EUR
695+0.1 EUR
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74HC594S16-13 74HC594S16-13 DIODES INCORPORATED 74HC594.pdf Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Mounting: SMD
Case: SO16
Family: HC
Number of channels: 4
Supply voltage: 2...6V DC
Technology: CMOS
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
auf Bestellung 2156 Stücke:
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143+0.5 EUR
174+0.41 EUR
194+0.37 EUR
226+0.32 EUR
275+0.26 EUR
304+0.24 EUR
500+0.22 EUR
1000+0.21 EUR
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74HC594T16-13 DIODES INCORPORATED 74HC594.pdf Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Mounting: SMD
Case: TSSOP16
Family: HC
Number of channels: 4
Supply voltage: 2...6V DC
Technology: CMOS
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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LM2904QS-13 LM2904QS-13 DIODES INCORPORATED LM2902Q_04Q.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; SO8; 100dB; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
auf Bestellung 2817 Stücke:
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186+0.39 EUR
304+0.24 EUR
379+0.19 EUR
521+0.14 EUR
625+0.11 EUR
1000+0.09 EUR
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LM2904S-13 LM2904S-13 DIODES INCORPORATED LM2902Q_04Q.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO8; 100dB; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
auf Bestellung 647 Stücke:
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129+0.56 EUR
213+0.34 EUR
265+0.27 EUR
360+0.2 EUR
439+0.16 EUR
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BAW56T-7-F BAW56T.pdf
BAW56T-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 75mA; 4ns; SOT523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 75mA
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Capacitance: 1.5pF
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Features of semiconductor devices: small signal
auf Bestellung 684 Stücke:
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250+0.29 EUR
358+0.2 EUR
684+0.1 EUR
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BAW56W-7-F BAW56W.pdf
BAW56W-7-F
+1
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT323; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT323
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
Features of semiconductor devices: small signal
auf Bestellung 2798 Stücke:
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Anzahl Preis
625+0.11 EUR
782+0.092 EUR
926+0.077 EUR
1421+0.05 EUR
2058+0.035 EUR
2337+0.031 EUR
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BAS16LP-7 BAS16LP.pdf
BAS16LP-7
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; DFN2; Ufmax: 1.25V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DFN2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 95 Stücke:
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95+0.76 EUR
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AL5801W6-7 AL5801.pdf
AL5801W6-7
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 350mA; Ch: 1; PWM
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Output current: 0.35A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 5...100V DC
Integrated circuit features: PWM
auf Bestellung 769 Stücke:
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157+0.46 EUR
222+0.32 EUR
242+0.3 EUR
256+0.28 EUR
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BC846BW-7-F BC846_7_8W.pdf
BC846BW-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
auf Bestellung 1498 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
625+0.11 EUR
953+0.075 EUR
1475+0.048 EUR
1498+0.047 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
LM2903QS-13 LM290xxQ.pdf
LM2903QS-13
Hersteller: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 200nA
Input offset current: 200nA
Input offset voltage: 15mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
Kind of output: open collector
Type of integrated circuit: comparator
Case: SO8
Kind of comparator: universal
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
auf Bestellung 2292 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
575+0.12 EUR
Mindestbestellmenge: 417
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BAT54AW-7-F BAT54W_AW_CW_SW.pdf
BAT54AW-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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DMT6009LCT DMT6009LCT.pdf
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 14.5mΩ
Power dissipation: 2.2W
Drain current: 29.8A
Gate-source voltage: ±16V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6009LFG-13 DMT6009LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 11.7mΩ
Power dissipation: 2.08W
Drain current: 9A
Gate-source voltage: ±16V
Pulsed drain current: 90A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6009LK3-13 DMT6009LK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12.8mΩ
Power dissipation: 2.6W
Drain current: 10.6A
Gate-source voltage: ±16V
Pulsed drain current: 90A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6009LPS-13 DMT6009LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 2.3W
Drain current: 9.1A
Gate-source voltage: ±16V
Pulsed drain current: 160A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6009LSS-13 DMT6009LSS.pdf
DMT6009LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 1.6W
Drain current: 11.5A
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6010LFG-13 DMT6010LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 25A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6010LFG-7 DMT6010LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6010LPS-13 DMT6010LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 12mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 125A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6011LSS-13 DMT6011LSS.pdf
DMT6011LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14.5mΩ
Power dissipation: 2.1W
Drain current: 8.5A
Gate-source voltage: ±20V
Pulsed drain current: 85A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6012LSS-13 DMT6012LSS.pdf
DMT6012LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14mΩ
Power dissipation: 1.84W
Drain current: 8.4A
Gate-source voltage: ±20V
Pulsed drain current: 65A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BC847CQ-7-F ds11108.pdf
BC847CQ-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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BC847CT-7-F BC847xT.pdf
BC847CT-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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BC847CW-13-F BC846_7_8W.pdf
BC847CW-13-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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BC847CW-7-F BC846_7_8W.pdf
BC847CW-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
auf Bestellung 5543 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
834+0.086 EUR
Mindestbestellmenge: 834
Im Einkaufswagen  Stück im Wert von  UAH
BAT54SW-13-F BAT54W_AW_CW_SW.pdf
BAT54SW-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT54SW-7-F BAT54W_AW_CW_SW.pdf
BAT54SW-7-F
+1
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 0.6A
auf Bestellung 5889 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
486+0.15 EUR
975+0.073 EUR
1563+0.046 EUR
1873+0.038 EUR
3000+0.031 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
BAT54SWQ-7-F SWQ.pdf
BAT54SWQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.89 EUR
Mindestbestellmenge: 80
Im Einkaufswagen  Stück im Wert von  UAH
BC847BT-7-F BC847xT.pdf
BC847BT-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 8548 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
715+0.1 EUR
1038+0.069 EUR
1247+0.057 EUR
2128+0.034 EUR
2891+0.025 EUR
Mindestbestellmenge: 455
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BAV99Q-13-F BAV99.pdf
BAV99Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
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BAV99T-7-F BAS16T_BAW56T_BAV70T_BAV99T.pdf
BAV99T-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 2538 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
521+0.14 EUR
569+0.13 EUR
779+0.092 EUR
1040+0.069 EUR
1208+0.059 EUR
Mindestbestellmenge: 417
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SMBJ12CA-13-F SMBJ_ser.pdf
SMBJ12CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1204 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
239+0.3 EUR
272+0.26 EUR
443+0.16 EUR
610+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 193
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HD01-T HD01.pdf
HD01-T
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 0.8A; Ifsm: 30A; MiniDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 0.8A
Max. forward impulse current: 30A
Case: MiniDIP
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 1869 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
153+0.47 EUR
177+0.41 EUR
321+0.22 EUR
500+0.15 EUR
Mindestbestellmenge: 125
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BAT54AWQ-7-F SWQ.pdf
BAT54AWQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
Produkt ist nicht verfügbar
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ZTL431AQFTA ZTL431,432.pdf
ZTL431AQFTA
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
341+0.21 EUR
385+0.19 EUR
447+0.16 EUR
481+0.15 EUR
506+0.14 EUR
Mindestbestellmenge: 228
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LMV358M8G-13 LMV321_358.pdf
LMV358M8G-13
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; Uoper: 2.7÷5.5V; MSOP8; 10dB
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Operating voltage: 2.7...5.5V
Mounting: SMT
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 1V/μs
Open-loop gain: 10dB
Integrated circuit features: rail-to-rail output
Input offset voltage: 7mV
Kind of package: reel; tape
auf Bestellung 2295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
240+0.3 EUR
271+0.26 EUR
327+0.22 EUR
336+0.21 EUR
371+0.19 EUR
500+0.17 EUR
Mindestbestellmenge: 173
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ZTL432AFTA ZTL431,432.pdf
ZTL432AFTA
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 1542 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
343+0.21 EUR
385+0.19 EUR
455+0.16 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
DMT3020LFDB-13 DMT3020LFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDB-7 DMT3020LFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDBQ-13 DMT3020LFDBQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDF-13 DMT3020LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT3020LFDF-7 DMT3020LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDFQ-13 DMT3020LFDFQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 0.4W
Drain current: 6.7A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDFQ-7 DMT3020LFDFQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LSDQ-13 DMT3020LSDQ.pdf
DMT3020LSDQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.5W
Drain current: 13A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020UFDB-13 DMT3020UFDB.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±12V
Gate charge: 8.8nC
On-state resistance: 30mΩ
Power dissipation: 1.3W
Drain current: 5.2A
Drain-source voltage: 30V
Pulsed drain current: 35A
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
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DMT30M9LPS-13 DMT30M9LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 160.5nC
On-state resistance: 1.6mΩ
Power dissipation: 2.6W
Drain current: 100A
Drain-source voltage: 30V
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BC857BT-7-F BC857T.pdf
BC857BT-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 6165 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
569+0.13 EUR
969+0.074 EUR
1370+0.052 EUR
1563+0.046 EUR
3000+0.038 EUR
6000+0.034 EUR
Mindestbestellmenge: 385
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BC857BW-7-F BC856AW-BC858CW.pdf
BC857BW-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel
Frequency: 200MHz
Quantity in set/package: 3000pcs.
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
113+0.63 EUR
Mindestbestellmenge: 113
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ADTC114EUAQ-7 ADTC114EUAQ.pdf
ADTC114EUAQ-7
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 330mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 30
Quantity in set/package: 3000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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DDTC114EUA-7-F DDTCxxxUA.pdf
DDTC114EUA-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Frequency: 250MHz
auf Bestellung 4739 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
511+0.14 EUR
794+0.09 EUR
953+0.075 EUR
1323+0.054 EUR
2067+0.035 EUR
3000+0.028 EUR
Mindestbestellmenge: 511
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DMMT3904W-7-F DMMT3904W.pdf
DMMT3904W-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Type of transistor: NPN x2
Case: SOT363
Collector current: 0.2A
Power dissipation: 0.2W
Current gain: 30...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
Mounting: SMD
auf Bestellung 2949 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
258+0.28 EUR
374+0.19 EUR
443+0.16 EUR
633+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 193
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DMP4015SK3Q-13 DMP4015SK3.pdf
DMP4015SK3Q-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; 3.5W; TO252
Case: TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -30A
On-state resistance: 15mΩ
Power dissipation: 3.5W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Application: automotive industry
auf Bestellung 2140 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
70+1.03 EUR
103+0.7 EUR
500+0.55 EUR
Mindestbestellmenge: 48
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DMP4015SSSQ-13 DMP4015SSSQ.pdf
DMP4015SSSQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.8A; 1.45W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.8A
On-state resistance: 15mΩ
Power dissipation: 1.45W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Application: automotive industry
auf Bestellung 2037 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.69 EUR
57+1.26 EUR
100+0.82 EUR
250+0.78 EUR
Mindestbestellmenge: 43
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74LVC1G17SE-7 74LVC1G17.pdf
74LVC1G17SE-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Kind of input: with Schmitt trigger
Kind of output: push-pull
Manufacturer series: LVC
auf Bestellung 924 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
807+0.089 EUR
924+0.077 EUR
Mindestbestellmenge: 625
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74LVC1G17W5-7 74LVC1G17.pdf
74LVC1G17W5-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Kind of input: with Schmitt trigger
Kind of output: push-pull
Manufacturer series: LVC
auf Bestellung 2426 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
715+0.1 EUR
807+0.089 EUR
955+0.075 EUR
1200+0.06 EUR
1334+0.054 EUR
1417+0.05 EUR
1489+0.048 EUR
Mindestbestellmenge: 556
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PAM2863ECR PAM2863.pdf
PAM2863ECR
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 2A; SOP8; SMD; Ch: 1; reel,tape
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Output current: 2A
Number of channels: 1
Operating voltage: 4.5...40V DC
Kind of integrated circuit: DC/DC converter; LED driver
Type of integrated circuit: driver
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
82+0.87 EUR
Mindestbestellmenge: 77
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SBR10U300CT SBR10U300.pdf
SBR10U300CT
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 300V; 10A; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.92V
Max. forward impulse current: 150A
Technology: SBR®
Kind of package: tube
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.27 EUR
41+1.77 EUR
67+1.07 EUR
Mindestbestellmenge: 32
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SBR40U300CT SBR40U300CT.pdf
SBR40U300CT
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 300V; 20Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.89V
Max. forward impulse current: 235A
Technology: SBR®
Kind of package: tube
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.36 EUR
33+2.19 EUR
36+1.99 EUR
40+1.83 EUR
44+1.66 EUR
Mindestbestellmenge: 31
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AP2202K-3.3TRE1 AP2202.pdf
AP2202K-3.3TRE1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2202
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
Integrated circuit features: shutdown mode control input
auf Bestellung 2390 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
500+0.14 EUR
562+0.13 EUR
676+0.11 EUR
695+0.1 EUR
Mindestbestellmenge: 334
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74HC594S16-13 74HC594.pdf
74HC594S16-13
Hersteller: DIODES INCORPORATED
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Mounting: SMD
Case: SO16
Family: HC
Number of channels: 4
Supply voltage: 2...6V DC
Technology: CMOS
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
auf Bestellung 2156 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
174+0.41 EUR
194+0.37 EUR
226+0.32 EUR
275+0.26 EUR
304+0.24 EUR
500+0.22 EUR
1000+0.21 EUR
Mindestbestellmenge: 143
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74HC594T16-13 74HC594.pdf
Hersteller: DIODES INCORPORATED
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Mounting: SMD
Case: TSSOP16
Family: HC
Number of channels: 4
Supply voltage: 2...6V DC
Technology: CMOS
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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LM2904QS-13 LM2902Q_04Q.pdf
LM2904QS-13
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; SO8; 100dB; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
auf Bestellung 2817 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
304+0.24 EUR
379+0.19 EUR
521+0.14 EUR
625+0.11 EUR
1000+0.09 EUR
Mindestbestellmenge: 186
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LM2904S-13 LM2902Q_04Q.pdf
LM2904S-13
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO8; 100dB; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
auf Bestellung 647 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
213+0.34 EUR
265+0.27 EUR
360+0.2 EUR
439+0.16 EUR
Mindestbestellmenge: 129
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