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BZT52C5V1-13-F BZT52C5V1-13-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Tolerance: ±6%
auf Bestellung 9840 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
736+0.097 EUR
848+0.084 EUR
1713+0.042 EUR
2440+0.029 EUR
2660+0.027 EUR
2825+0.025 EUR
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BZT52C5V1-7-F BZT52C5V1-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 3340 Stücke:
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625+0.11 EUR
893+0.08 EUR
1112+0.064 EUR
1985+0.036 EUR
2539+0.028 EUR
2733+0.026 EUR
2841+0.025 EUR
3000+0.024 EUR
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BZT52C5V1S-7-F BZT52C5V1S-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±6%
auf Bestellung 259 Stücke:
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259+0.27 EUR
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BZT52C5V1SQ-7-F BZT52C5V1SQ-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±6%
Application: automotive industry
auf Bestellung 300 Stücke:
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300+0.24 EUR
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BCX5416TA BCX5416TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BD11709F2591BF&compId=BCX54x-DTE.pdf?ci_sign=a6de10d206e214dd6aa6c975b3b2ed6b35926cdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Case: SOT89
Mounting: SMD
Frequency: 150MHz
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 1W
Type of transistor: NPN
Collector-emitter voltage: 45V
Quantity in set/package: 1000pcs.
Polarisation: bipolar
auf Bestellung 8 Stücke:
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DF08S-T DF08S-T DIODES INCORPORATED DF005_10S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.8kV
Load current: 1A
Case: DFS
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Electrical mounting: SMT
auf Bestellung 1183 Stücke:
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97+0.74 EUR
116+0.62 EUR
139+0.52 EUR
191+0.38 EUR
269+0.27 EUR
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DMT3020LFDBQ-7 DIODES INCORPORATED DMT3020LFDBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
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DMT6002LPS-13 DIODES INCORPORATED DMT6002LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 130.8nC
On-state resistance: 3mΩ
Power dissipation: 2.3W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6004LPS-13 DIODES INCORPORATED DMT6004LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 78.3nC
On-state resistance: 4.5mΩ
Power dissipation: 2.5W
Drain current: 16A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6004SCT DMT6004SCT DIODES INCORPORATED DMT6004SCT.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB
Case: TO220AB
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 113W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 180A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6004SPS-13 DIODES INCORPORATED DMT6004SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 2.6W
Drain current: 18A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6005LFG-13 DIODES INCORPORATED DMT6005LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 48.7nC
On-state resistance: 7mΩ
Power dissipation: 1.98W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6005LFG-7 DIODES INCORPORATED DMT6005LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 48.7nC
On-state resistance: 7mΩ
Power dissipation: 1.98W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6005LPS-13 DIODES INCORPORATED DMT6005LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 47.1nC
On-state resistance: 6.5mΩ
Power dissipation: 2.6W
Drain current: 14.7A
Gate-source voltage: ±20V
Pulsed drain current: 500A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6006LK3-13 DIODES INCORPORATED DMT6006LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 3.1W
Drain current: 71A
Gate-source voltage: ±20V
Pulsed drain current: 350A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6006LSS-13 DMT6006LSS-13 DIODES INCORPORATED DMT6006LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 2.08W
Drain current: 11.7A
Gate-source voltage: ±20V
Pulsed drain current: 110A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6006SPS-13 DIODES INCORPORATED DMT6006SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 27.9nC
On-state resistance: 6.2mΩ
Power dissipation: 2.45W
Drain current: 13A
Gate-source voltage: ±20V
Pulsed drain current: 390A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6007LFG-13 DIODES INCORPORATED DMT6007LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6007LFG-7 DMT6007LFG-7 DIODES INCORPORATED DMT6007LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 70A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
auf Bestellung 1851 Stücke:
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72+1 EUR
82+0.88 EUR
88+0.81 EUR
100+0.72 EUR
Mindestbestellmenge: 72
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DMT6007LFGQ-13 DIODES INCORPORATED DMT6007LFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
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DMT6007LFGQ-7 DIODES INCORPORATED DMT6007LFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
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DMT6008LFG-13 DIODES INCORPORATED DMT6008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6008LFG-7 DIODES INCORPORATED DMT6008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMBJ30A-13-F SMBJ30A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3515 Stücke:
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157+0.46 EUR
257+0.28 EUR
472+0.15 EUR
633+0.11 EUR
1000+0.1 EUR
3000+0.093 EUR
Mindestbestellmenge: 157
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AP2112K-1.2TRG1 AP2112K-1.2TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 0.6A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2112K-2.5TRG1 AP2112K-2.5TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 2.5V
Output current: 0.6A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
auf Bestellung 2925 Stücke:
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313+0.23 EUR
385+0.19 EUR
435+0.16 EUR
511+0.14 EUR
625+0.11 EUR
685+0.1 EUR
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DMC3021LSD-13 DMC3021LSD-13 DIODES INCORPORATED DMC3021LSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7/-8.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.021/0.039Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 2506 Stücke:
Lieferzeit 14-21 Tag (e)
84+0.86 EUR
115+0.63 EUR
140+0.51 EUR
165+0.43 EUR
192+0.37 EUR
500+0.27 EUR
1000+0.24 EUR
Mindestbestellmenge: 84
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SMAJ6.5A-13-F SMAJ6.5A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2135 Stücke:
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250+0.29 EUR
305+0.23 EUR
360+0.2 EUR
463+0.15 EUR
944+0.076 EUR
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BSS127S-7 BSS127S-7 DIODES INCORPORATED BSS127.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 70mA
Power dissipation: 0.61W
On-state resistance: 160Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 2371 Stücke:
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152+0.47 EUR
193+0.37 EUR
225+0.32 EUR
350+0.2 EUR
421+0.17 EUR
610+0.12 EUR
1000+0.1 EUR
1500+0.097 EUR
Mindestbestellmenge: 152
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SMBJ58A-13-F SMBJ58A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2371 Stücke:
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358+0.2 EUR
424+0.17 EUR
477+0.15 EUR
575+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 358
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74HCT125S14-13 74HCT125S14-13 DIODES INCORPORATED 74HCT125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; SO14; HCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SO14
Operating temperature: -40...125°C
Kind of package: reel; tape
Mounting: SMD
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Technology: CMOS; TTL
Manufacturer series: HCT
Number of channels: 4
auf Bestellung 414 Stücke:
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343+0.21 EUR
414+0.17 EUR
Mindestbestellmenge: 343
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TL431ASA-7 TL431ASA-7 DIODES INCORPORATED TL431_432.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 2892 Stücke:
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278+0.26 EUR
348+0.21 EUR
397+0.18 EUR
468+0.15 EUR
575+0.12 EUR
633+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 278
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PAM8902HKER DIODES INCORPORATED PAM8902H.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 1; Amp.class: D; QFN16; 2.5÷5.5VDC
Case: QFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Voltage supply range: 2.5...5.5V DC
Amplifier class: D
Type of integrated circuit: audio amplifier
Produkt ist nicht verfügbar
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PAM8904EGPR DIODES INCORPORATED PAM8904E.pdf Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; WQFN12; Ch: 1; 1.5÷5.5VDC
Case: WQFN12
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Voltage supply range: 1.5...5.5V DC
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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PAM8904EJER DIODES INCORPORATED PAM8904E.pdf Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; Ch: 1; 1.5÷5.5VDC
Case: UQFN16
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Voltage supply range: 1.5...5.5V DC
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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PAM8904EJPR DIODES INCORPORATED PAM8904E.pdf Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.5÷5.5VDC
Case: UQFN12
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Voltage supply range: 1.5...5.5V DC
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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PAM8904JER DIODES INCORPORATED PAM8904.pdf Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; Ch: 1; 2.3÷5.5VDC
Case: UQFN16
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Number of channels: 1
Voltage supply range: 2.3...5.5V DC
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8904JPR DIODES INCORPORATED PAM8904.pdf Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.8÷5.5VDC
Case: UQFN12
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Voltage supply range: 1.8...5.5V DC
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8904QJER DIODES INCORPORATED PAM8904Q.pdf Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; Ch: 1; 2.3÷5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: UQFN16
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Voltage supply range: 2.3...5V DC
Produkt ist nicht verfügbar
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PAM8907SB10-7 DIODES INCORPORATED PAM8907.pdf Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN10; Ch: 1; 1.8÷5.5VDC
Case: UQFN10
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Voltage supply range: 1.8...5.5V DC
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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PAM8908JER DIODES INCORPORATED PAM8908.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 25mW; headphone driver,stereo; Ch: 2
Integrated circuit features: headphone driver; stereo
Case: UQFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output power: 25mW
Number of channels: 2
Voltage supply range: 2.5...5.5V DC
Amplifier class: AB
Type of integrated circuit: audio amplifier
Produkt ist nicht verfügbar
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HD06-T HD06-T DIODES INCORPORATED HD01.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.8A; Ifsm: 30A; MiniDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 30A
Electrical mounting: SMT
Case: MiniDIP
Kind of package: reel; tape
auf Bestellung 1854 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.63 EUR
172+0.42 EUR
295+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 114
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AP63300WU-7 AP63300WU-7 DIODES INCORPORATED AP63300-AP63301.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 0.8÷31VDC; 3A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 0.8...31V DC
Output current: 3A
Case: TSOT26
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 96%
auf Bestellung 8678 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
97+0.74 EUR
107+0.67 EUR
115+0.62 EUR
122+0.59 EUR
250+0.55 EUR
500+0.53 EUR
1000+0.52 EUR
Mindestbestellmenge: 69
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74LVC1G125SE-7 74LVC1G125SE-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BDEE9CD98F283E28&compId=74LVC1G125.pdf?ci_sign=289f95504f19636ce556088668dafcb5c1ad723c Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Mounting: SMD
Case: SOT353
Manufacturer series: LVC
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Quiescent current: 200µA
Kind of output: 3-state
auf Bestellung 2358 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
782+0.092 EUR
893+0.08 EUR
1034+0.069 EUR
1235+0.058 EUR
1359+0.053 EUR
1446+0.049 EUR
Mindestbestellmenge: 500
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BAS40-06-7-F BAS40-06-7-F DIODES INCORPORATED BAS40_-04_-05_-06.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Produkt ist nicht verfügbar
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BCX5310TA BCX5310TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BEC3C889FBB3D1&compId=BCX51_52_53.pdf?ci_sign=8792a8d94e47e33071c157a1b519cb1a9a90c54e Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Mounting: SMD
Type of transistor: PNP
Case: SOT89
Collector current: 1A
Power dissipation: 1W
Current gain: 63...160
Collector-emitter voltage: 80V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
Kind of package: reel; tape
auf Bestellung 2514 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
218+0.33 EUR
246+0.29 EUR
435+0.16 EUR
650+0.11 EUR
1000+0.096 EUR
2000+0.084 EUR
Mindestbestellmenge: 193
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BCX5316TA BCX5316TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BEC3C889FBB3D1&compId=BCX51_52_53.pdf?ci_sign=8792a8d94e47e33071c157a1b519cb1a9a90c54e Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 631 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
266+0.27 EUR
400+0.18 EUR
478+0.15 EUR
592+0.12 EUR
631+0.11 EUR
Mindestbestellmenge: 186
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BCX53TA BCX53TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BEC3C889FBB3D1&compId=BCX51_52_53.pdf?ci_sign=8792a8d94e47e33071c157a1b519cb1a9a90c54e Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 1730 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
265+0.27 EUR
327+0.22 EUR
455+0.16 EUR
650+0.11 EUR
1000+0.097 EUR
Mindestbestellmenge: 193
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BCX53TC BCX53TC DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
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PAM8016AKR DIODES INCORPORATED PAM8016.pdf Category: Motor and PWM drivers
Description: IC: driver; H-bridge; haptic motor controller; PWM; U-FLGA1515-9
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: haptic motor controller
Interface: PWM
Case: U-FLGA1515-9
Integrated circuit features: Eccentric Rotating Mass (ERM); Linear Resonance Acutator (LRA)
Mounting: SMD
Operating temperature: -25...85°C
Application: haptic motors; linear actuator; servos
Operating voltage: 2.8...5.5V DC
Produkt ist nicht verfügbar
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PAM8302AADCR PAM8302AADCR DIODES INCORPORATED PAM8302A.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Voltage supply range: 2...5.5V DC
Output power: 2.5W
Type of integrated circuit: audio amplifier
Amplifier class: D
Integrated circuit features: low noise; thermal protection
auf Bestellung 1178 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
203+0.35 EUR
227+0.32 EUR
249+0.29 EUR
Mindestbestellmenge: 143
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BSS123-7-F BSS123-7-F DIODES INCORPORATED BSS123-7-F.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 5443 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
358+0.2 EUR
414+0.17 EUR
589+0.12 EUR
692+0.1 EUR
1015+0.07 EUR
1197+0.06 EUR
3000+0.046 EUR
Mindestbestellmenge: 278
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BSS123Q-13 BSS123Q-13 DIODES INCORPORATED BSS123Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 680mA; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Pulsed drain current: 0.68A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 9980 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
397+0.18 EUR
459+0.16 EUR
790+0.091 EUR
1142+0.063 EUR
1323+0.054 EUR
2000+0.047 EUR
5000+0.045 EUR
Mindestbestellmenge: 313
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BSS123Q-7 BSS123Q-7 DIODES INCORPORATED BSS123Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
270+0.27 EUR
Mindestbestellmenge: 270
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BSS123TA BSS123TA DIODES INCORPORATED BSS123.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2881 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
228+0.31 EUR
258+0.28 EUR
368+0.19 EUR
428+0.17 EUR
589+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
BSS123W-7-F BSS123W-7-F DIODES INCORPORATED BSS123W.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS123WQ-7-F BSS123WQ-7-F DIODES INCORPORATED BSS123WQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 634 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
321+0.22 EUR
394+0.18 EUR
634+0.11 EUR
Mindestbestellmenge: 250
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SMAJ12CA-13-F SMAJ12CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 2371 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
472+0.15 EUR
556+0.13 EUR
687+0.1 EUR
815+0.088 EUR
939+0.076 EUR
1102+0.065 EUR
1270+0.056 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G07SE-7 74LVC1G07SE-7 DIODES INCORPORATED 74LVC1G07.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Quiescent current: 200µA
Manufacturer series: LVC
auf Bestellung 2969 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
863+0.083 EUR
962+0.074 EUR
1107+0.065 EUR
1323+0.054 EUR
1450+0.049 EUR
1539+0.046 EUR
1624+0.044 EUR
Mindestbestellmenge: 556
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B550C-13-F B550C-13-F DIODES INCORPORATED B5X0C-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 5A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 300pF
Max. forward voltage: 0.7V
Max. forward impulse current: 100A
Load current: 5A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMC
auf Bestellung 2897 Stücke:
Lieferzeit 14-21 Tag (e)
97+0.74 EUR
122+0.59 EUR
136+0.53 EUR
Mindestbestellmenge: 97
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BZT52C5V1-13-F BZT52Cxx_ser.pdf
BZT52C5V1-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Tolerance: ±6%
auf Bestellung 9840 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
736+0.097 EUR
848+0.084 EUR
1713+0.042 EUR
2440+0.029 EUR
2660+0.027 EUR
2825+0.025 EUR
Mindestbestellmenge: 625
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BZT52C5V1-7-F BZT52Cxx_ser.pdf
BZT52C5V1-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 3340 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
893+0.08 EUR
1112+0.064 EUR
1985+0.036 EUR
2539+0.028 EUR
2733+0.026 EUR
2841+0.025 EUR
3000+0.024 EUR
Mindestbestellmenge: 625
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BZT52C5V1S-7-F BZT52CxxS_ser.pdf
BZT52C5V1S-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±6%
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
259+0.27 EUR
Mindestbestellmenge: 259
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BZT52C5V1SQ-7-F BZT52CxxS_ser.pdf
BZT52C5V1SQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±6%
Application: automotive industry
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
300+0.24 EUR
Mindestbestellmenge: 300
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BCX5416TA pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BD11709F2591BF&compId=BCX54x-DTE.pdf?ci_sign=a6de10d206e214dd6aa6c975b3b2ed6b35926cdf
BCX5416TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Case: SOT89
Mounting: SMD
Frequency: 150MHz
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 1W
Type of transistor: NPN
Collector-emitter voltage: 45V
Quantity in set/package: 1000pcs.
Polarisation: bipolar
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
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DF08S-T DF005_10S.pdf
DF08S-T
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.8kV
Load current: 1A
Case: DFS
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Electrical mounting: SMT
auf Bestellung 1183 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
116+0.62 EUR
139+0.52 EUR
191+0.38 EUR
269+0.27 EUR
Mindestbestellmenge: 97
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DMT3020LFDBQ-7 DMT3020LFDBQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6002LPS-13 DMT6002LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 130.8nC
On-state resistance: 3mΩ
Power dissipation: 2.3W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6004LPS-13 DMT6004LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 78.3nC
On-state resistance: 4.5mΩ
Power dissipation: 2.5W
Drain current: 16A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6004SCT DMT6004SCT.pdf
DMT6004SCT
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB
Case: TO220AB
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 113W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 180A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6004SPS-13 DMT6004SPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 2.6W
Drain current: 18A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6005LFG-13 DMT6005LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 48.7nC
On-state resistance: 7mΩ
Power dissipation: 1.98W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6005LFG-7 DMT6005LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 48.7nC
On-state resistance: 7mΩ
Power dissipation: 1.98W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6005LPS-13 DMT6005LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 47.1nC
On-state resistance: 6.5mΩ
Power dissipation: 2.6W
Drain current: 14.7A
Gate-source voltage: ±20V
Pulsed drain current: 500A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6006LK3-13 DMT6006LK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 3.1W
Drain current: 71A
Gate-source voltage: ±20V
Pulsed drain current: 350A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6006LSS-13 DMT6006LSS.pdf
DMT6006LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 2.08W
Drain current: 11.7A
Gate-source voltage: ±20V
Pulsed drain current: 110A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6006SPS-13 DMT6006SPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 27.9nC
On-state resistance: 6.2mΩ
Power dissipation: 2.45W
Drain current: 13A
Gate-source voltage: ±20V
Pulsed drain current: 390A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6007LFG-13 DMT6007LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6007LFG-7 DMT6007LFG.pdf
DMT6007LFG-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 70A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
auf Bestellung 1851 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
82+0.88 EUR
88+0.81 EUR
100+0.72 EUR
Mindestbestellmenge: 72
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DMT6007LFGQ-13 DMT6007LFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6007LFGQ-7 DMT6007LFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6008LFG-13 DMT6008LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6008LFG-7 DMT6008LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMBJ30A-13-F SMBJ_ser.pdf
SMBJ30A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3515 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
257+0.28 EUR
472+0.15 EUR
633+0.11 EUR
1000+0.1 EUR
3000+0.093 EUR
Mindestbestellmenge: 157
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AP2112K-1.2TRG1 AP2112.pdf
AP2112K-1.2TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 0.6A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
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AP2112K-2.5TRG1 AP2112.pdf
AP2112K-2.5TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 2.5V
Output current: 0.6A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
auf Bestellung 2925 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
385+0.19 EUR
435+0.16 EUR
511+0.14 EUR
625+0.11 EUR
685+0.1 EUR
Mindestbestellmenge: 313
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DMC3021LSD-13 DMC3021LSD-13.pdf
DMC3021LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7/-8.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.021/0.039Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 2506 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
115+0.63 EUR
140+0.51 EUR
165+0.43 EUR
192+0.37 EUR
500+0.27 EUR
1000+0.24 EUR
Mindestbestellmenge: 84
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SMAJ6.5A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ6.5A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2135 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
305+0.23 EUR
360+0.2 EUR
463+0.15 EUR
944+0.076 EUR
Mindestbestellmenge: 250
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BSS127S-7 BSS127.pdf
BSS127S-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 70mA
Power dissipation: 0.61W
On-state resistance: 160Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 2371 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
193+0.37 EUR
225+0.32 EUR
350+0.2 EUR
421+0.17 EUR
610+0.12 EUR
1000+0.1 EUR
1500+0.097 EUR
Mindestbestellmenge: 152
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SMBJ58A-13-F SMBJ_ser.pdf
SMBJ58A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2371 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
424+0.17 EUR
477+0.15 EUR
575+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 358
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74HCT125S14-13 74HCT125.pdf
74HCT125S14-13
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; SO14; HCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SO14
Operating temperature: -40...125°C
Kind of package: reel; tape
Mounting: SMD
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Technology: CMOS; TTL
Manufacturer series: HCT
Number of channels: 4
auf Bestellung 414 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
343+0.21 EUR
414+0.17 EUR
Mindestbestellmenge: 343
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TL431ASA-7 TL431_432.pdf
TL431ASA-7
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 2892 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
348+0.21 EUR
397+0.18 EUR
468+0.15 EUR
575+0.12 EUR
633+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 278
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PAM8902HKER PAM8902H.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 1; Amp.class: D; QFN16; 2.5÷5.5VDC
Case: QFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Voltage supply range: 2.5...5.5V DC
Amplifier class: D
Type of integrated circuit: audio amplifier
Produkt ist nicht verfügbar
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PAM8904EGPR PAM8904E.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; WQFN12; Ch: 1; 1.5÷5.5VDC
Case: WQFN12
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Voltage supply range: 1.5...5.5V DC
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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PAM8904EJER PAM8904E.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; Ch: 1; 1.5÷5.5VDC
Case: UQFN16
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Voltage supply range: 1.5...5.5V DC
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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PAM8904EJPR PAM8904E.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.5÷5.5VDC
Case: UQFN12
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Voltage supply range: 1.5...5.5V DC
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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PAM8904JER PAM8904.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; Ch: 1; 2.3÷5.5VDC
Case: UQFN16
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Number of channels: 1
Voltage supply range: 2.3...5.5V DC
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8904JPR PAM8904.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.8÷5.5VDC
Case: UQFN12
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Voltage supply range: 1.8...5.5V DC
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8904QJER PAM8904Q.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; Ch: 1; 2.3÷5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: UQFN16
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Voltage supply range: 2.3...5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8907SB10-7 PAM8907.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN10; Ch: 1; 1.8÷5.5VDC
Case: UQFN10
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Voltage supply range: 1.8...5.5V DC
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8908JER PAM8908.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 25mW; headphone driver,stereo; Ch: 2
Integrated circuit features: headphone driver; stereo
Case: UQFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output power: 25mW
Number of channels: 2
Voltage supply range: 2.5...5.5V DC
Amplifier class: AB
Type of integrated circuit: audio amplifier
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HD06-T HD01.pdf
HD06-T
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.8A; Ifsm: 30A; MiniDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 30A
Electrical mounting: SMT
Case: MiniDIP
Kind of package: reel; tape
auf Bestellung 1854 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
172+0.42 EUR
295+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 114
Im Einkaufswagen  Stück im Wert von  UAH
AP63300WU-7 AP63300-AP63301.pdf
AP63300WU-7
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 0.8÷31VDC; 3A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 0.8...31V DC
Output current: 3A
Case: TSOT26
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 96%
auf Bestellung 8678 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
97+0.74 EUR
107+0.67 EUR
115+0.62 EUR
122+0.59 EUR
250+0.55 EUR
500+0.53 EUR
1000+0.52 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G125SE-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BDEE9CD98F283E28&compId=74LVC1G125.pdf?ci_sign=289f95504f19636ce556088668dafcb5c1ad723c
74LVC1G125SE-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Mounting: SMD
Case: SOT353
Manufacturer series: LVC
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Quiescent current: 200µA
Kind of output: 3-state
auf Bestellung 2358 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
782+0.092 EUR
893+0.08 EUR
1034+0.069 EUR
1235+0.058 EUR
1359+0.053 EUR
1446+0.049 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
BAS40-06-7-F BAS40_-04_-05_-06.pdf
BAS40-06-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCX5310TA pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BEC3C889FBB3D1&compId=BCX51_52_53.pdf?ci_sign=8792a8d94e47e33071c157a1b519cb1a9a90c54e
BCX5310TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Mounting: SMD
Type of transistor: PNP
Case: SOT89
Collector current: 1A
Power dissipation: 1W
Current gain: 63...160
Collector-emitter voltage: 80V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
Kind of package: reel; tape
auf Bestellung 2514 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
218+0.33 EUR
246+0.29 EUR
435+0.16 EUR
650+0.11 EUR
1000+0.096 EUR
2000+0.084 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
BCX5316TA pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BEC3C889FBB3D1&compId=BCX51_52_53.pdf?ci_sign=8792a8d94e47e33071c157a1b519cb1a9a90c54e
BCX5316TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 631 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
266+0.27 EUR
400+0.18 EUR
478+0.15 EUR
592+0.12 EUR
631+0.11 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
BCX53TA pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BEC3C889FBB3D1&compId=BCX51_52_53.pdf?ci_sign=8792a8d94e47e33071c157a1b519cb1a9a90c54e
BCX53TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 1730 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
265+0.27 EUR
327+0.22 EUR
455+0.16 EUR
650+0.11 EUR
1000+0.097 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
BCX53TC
BCX53TC
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8016AKR PAM8016.pdf
Hersteller: DIODES INCORPORATED
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; haptic motor controller; PWM; U-FLGA1515-9
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: haptic motor controller
Interface: PWM
Case: U-FLGA1515-9
Integrated circuit features: Eccentric Rotating Mass (ERM); Linear Resonance Acutator (LRA)
Mounting: SMD
Operating temperature: -25...85°C
Application: haptic motors; linear actuator; servos
Operating voltage: 2.8...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8302AADCR PAM8302A.pdf
PAM8302AADCR
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Voltage supply range: 2...5.5V DC
Output power: 2.5W
Type of integrated circuit: audio amplifier
Amplifier class: D
Integrated circuit features: low noise; thermal protection
auf Bestellung 1178 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
203+0.35 EUR
227+0.32 EUR
249+0.29 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
BSS123-7-F BSS123-7-F.pdf
BSS123-7-F
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 5443 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
358+0.2 EUR
414+0.17 EUR
589+0.12 EUR
692+0.1 EUR
1015+0.07 EUR
1197+0.06 EUR
3000+0.046 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
BSS123Q-13 BSS123Q.pdf
BSS123Q-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 680mA; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Pulsed drain current: 0.68A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 9980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
397+0.18 EUR
459+0.16 EUR
790+0.091 EUR
1142+0.063 EUR
1323+0.054 EUR
2000+0.047 EUR
5000+0.045 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
BSS123Q-7 BSS123Q.pdf
BSS123Q-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
270+0.27 EUR
Mindestbestellmenge: 270
Im Einkaufswagen  Stück im Wert von  UAH
BSS123TA BSS123.pdf
BSS123TA
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2881 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
228+0.31 EUR
258+0.28 EUR
368+0.19 EUR
428+0.17 EUR
589+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
BSS123W-7-F BSS123W.pdf
BSS123W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS123WQ-7-F BSS123WQ.pdf
BSS123WQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 634 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
321+0.22 EUR
394+0.18 EUR
634+0.11 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ12CA-13-F SMAJ_ser.pdf
SMAJ12CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 2371 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
472+0.15 EUR
556+0.13 EUR
687+0.1 EUR
815+0.088 EUR
939+0.076 EUR
1102+0.065 EUR
1270+0.056 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G07SE-7 74LVC1G07.pdf
74LVC1G07SE-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Quiescent current: 200µA
Manufacturer series: LVC
auf Bestellung 2969 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
863+0.083 EUR
962+0.074 EUR
1107+0.065 EUR
1323+0.054 EUR
1450+0.049 EUR
1539+0.046 EUR
1624+0.044 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
B550C-13-F B5X0C-DTE.pdf
B550C-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 5A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 300pF
Max. forward voltage: 0.7V
Max. forward impulse current: 100A
Load current: 5A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMC
auf Bestellung 2897 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
122+0.59 EUR
136+0.53 EUR
Mindestbestellmenge: 97
Im Einkaufswagen  Stück im Wert von  UAH
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