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DMP3085LSD-13 DMP3085LSD-13 DIODES INCORPORATED DMP3085LSD.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8
Mounting: SMD
Pulsed drain current: -20A
Power dissipation: 1.1W
Polarisation: unipolar
Drain current: -3.1A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET x2
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 70mΩ
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DMC4040SSD-13 DMC4040SSD-13 DIODES INCORPORATED DMC4040SSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 7.3/-7.5A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.04/0.045Ω
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DMHC3025LSD-13 DMHC3025LSD-13 DIODES INCORPORATED DMHC3025LSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; complementary pair; 30/-30V; 1.5W
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.5W
Gate charge: 11.7/11.4nC
Polarisation: unipolar
Drain current: 6/-4.2A
Kind of channel: enhancement
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 25/50mΩ
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DMN6040SSD-13 DMN6040SSD-13 DIODES INCORPORATED DMN6040SSD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Power dissipation: 0.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMG4800LSD-13 DMG4800LSD-13 DIODES INCORPORATED DMG4800LSD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.4A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 22mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP2040USD-13 DMP2040USD-13 DIODES INCORPORATED DMP2040USD.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -30A; 1.6W; SO8
Mounting: SMD
Case: SO8
Pulsed drain current: -30A
Power dissipation: 1.6W
Gate charge: 19nC
Polarisation: unipolar
Drain current: -5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
On-state resistance: 52mΩ
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DMC4050SSD-13 DMC4050SSD-13 DIODES INCORPORATED DMC4050SSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 5.8/-5.5A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 45/45mΩ
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BZX84B27-7-F DIODES INCORPORATED BZX84Bxx(x).pdf BZX84Bxxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 27V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
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FMMT549TA DIODES INCORPORATED FMMT549.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100MHz
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FMMT549ATA DIODES INCORPORATED FMMT549.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...500
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100MHz
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DMNH4015SSD-13 DMNH4015SSD-13 DIODES INCORPORATED DMNH4015SSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMNH4015SSDQ-13 DMNH4015SSDQ-13 DIODES INCORPORATED DMNH4015SSDQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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BZX84C3V9TS-7-F BZX84C3V9TS-7-F DIODES INCORPORATED BZX84CxxTS_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
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BZX84C3V9W-7-F BZX84C3V9W-7-F DIODES INCORPORATED BZX84CxxW_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
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74LVC2G17DW-7 74LVC2G17DW-7 DIODES INCORPORATED 74LVC2G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; SOT363; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Mounting: SMD
Case: SOT363
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of package: reel; tape
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74LVC2G17FX4-7 DIODES INCORPORATED 74LVC2G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1409-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Mounting: SMD
Case: X2-DFN1409-6
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of package: reel; tape
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74LVC2G17FW4-7 DIODES INCORPORATED 74LVC2G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1010-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Mounting: SMD
Case: X2-DFN1010-6
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of package: reel; tape
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74LVC2G17FZ4-7 DIODES INCORPORATED 74LVC2G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Mounting: SMD
Case: X2-DFN1410-6
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of package: reel; tape
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SMBJ7.0A-13-F SMBJ7.0A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.78÷8.95V; 50A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.95V
Max. forward impulse current: 50A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMAJ36CA-13-F SMAJ36CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMAJ36CAQ-13-F SMAJ36CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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74AHC1G126SE-7 74AHC1G126SE-7 DIODES INCORPORATED 74AHC1G126.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; AHC
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT353
Quiescent current: 40µA
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Manufacturer series: AHC
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS
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APX811-46UG-7 DIODES INCORPORATED APX811_812.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Mounting: SMD
Kind of package: reel; tape
Active logical level: low
Integrated circuit features: manual reset
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Case: SOT143
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Number of channels: 1
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 4.63V
Produkt ist nicht verfügbar
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BZX84B11-7-F BZX84B11-7-F DIODES INCORPORATED BZX84Bxxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 11V; SMD; SOT23; reel,tape; single diode
Kind of package: reel; tape
Case: SOT23
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±2%
Zener voltage: 11V
Semiconductor structure: single diode
Mounting: SMD
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APX803L20-23SA-7 DIODES INCORPORATED APX803L.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Case: SOT23
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 220ms
Supply voltage: 0.9...5.5V DC
Number of channels: 1
Threshold on-voltage: 2.3V
Integrated circuit features: ±1,5% accuracy
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BZX84C15-13-F BZX84C15-13-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
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DDZX15-13 DDZX15-13 DIODES INCORPORATED ds30408.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2.5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
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AP7115-15SEG-7 DIODES INCORPORATED AP7115.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT353; SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7115
Input voltage: 2.5...5.5V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Output voltage: 1.5V
Kind of package: reel; tape
Case: SOT353
Number of channels: 1
Tolerance: ±2%
Mounting: SMD
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TLV271CW5-7 DIODES INCORPORATED TLV27x.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; Ch: 1; Uoper: 2.7÷16V; SOT25; 110dB
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Number of channels: 1
Mounting: SMT
Case: SOT25
Operating temperature: 0...70°C
Slew rate: 2V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 5mV
Open-loop gain: 110dB
Kind of package: reel; tape
Operating voltage: 2.7...16V
Power dissipation: 0.22W
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TLV271IW5-7 TLV271IW5-7 DIODES INCORPORATED TLV27x.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; Ch: 1; Uoper: 2.7÷16V; SOT25; 110dB
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Number of channels: 1
Mounting: SMT
Case: SOT25
Operating temperature: -40...125°C
Slew rate: 2V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 5mV
Open-loop gain: 110dB
Kind of package: reel; tape
Operating voltage: 2.7...16V
Power dissipation: 0.22W
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AP3031KTR-G1 AP3031KTR-G1 DIODES INCORPORATED AP3031%20Datasheet.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷16VDC; Uout: 37VDC; 1.4A; SOT23-6
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...16V DC
Output voltage: 37V DC
Output current: 1.4A
Case: SOT23-6
Mounting: SMD
Frequency: 1MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Integrated circuit features: PWM
Efficiency: 92%
Application: for LED applications
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AP3012KTR-E1 AP3012KTR-E1 DIODES INCORPORATED AP3012-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.6÷16VDC; Uout: 1.25÷29VDC; 0.5A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.6...16V DC
Output voltage: 1.25...29V DC
Output current: 0.5A
Case: SOT23-5
Mounting: SMD
Frequency: 1.5MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 85%
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AP3012KTR-G1 AP3012KTR-G1 DIODES INCORPORATED AP3012-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.6÷16VDC; Uout: 1.25÷29VDC; 0.5A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.6...16V DC
Output voltage: 1.25...29V DC
Output current: 0.5A
Case: SOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 85%
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FZT749TA FZT749TA DIODES INCORPORATED FZT749.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Frequency: 160MHz
Kind of package: reel; tape
Current gain: 75...570
Quantity in set/package: 1000pcs.
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FZT749TC DIODES INCORPORATED FZT749.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 2W; SOT223-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-3
Mounting: SMD
Frequency: 160MHz
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BCW68HTA BCW68HTA DIODES INCORPORATED BCW68H.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.31W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 1000pcs.
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DESD5V0S1BLD-7B DIODES INCORPORATED DESD5V0S1BLD.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 12A; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Breakdown voltage: 5.5V
Max. forward impulse current: 12A
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 0.1µA
Case: DFN1006-2
Type of diode: TVS
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PDS1040-13 DIODES INCORPORATED PDS1040.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Leakage current: 50mA
Max. forward impulse current: 275A
Kind of package: reel; tape
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PDS1040L-13 DIODES INCORPORATED ds30486.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 275A
Kind of package: reel; tape
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PDS1040CTL-13 DIODES INCORPORATED ds30485.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 40V
Leakage current: 25mA
Max. forward impulse current: 110A
Kind of package: reel; tape
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PDS1040Q-13 DIODES INCORPORATED PDS1040.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Leakage current: 50mA
Max. forward impulse current: 275A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MMSZ5231BS-7-F MMSZ5231BS-7-F DIODES INCORPORATED mmsz52xxbs_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
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MMSZ5231BQ-7-F MMSZ5231BQ-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 5.1V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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SMBJ6.0CA-13-F SMBJ6.0CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.67V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DMT6012LFDF-13 DIODES INCORPORATED DMT6012LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 1.2W
Pulsed drain current: 60A
Power dissipation: 1.2W
Gate charge: 13.6nC
Polarisation: unipolar
Drain current: 7.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 21mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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DMT6012LFDF-7 DIODES INCORPORATED DMT6012LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 1.2W
Drain current: 7.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 21mΩ
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 1.2W
Gate charge: 13.6nC
Polarisation: unipolar
Produkt ist nicht verfügbar
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DMT6012LFV-13 DIODES INCORPORATED DMT6012LFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.7A; Idm: 170A; 1.95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34.7A
Pulsed drain current: 170A
Power dissipation: 1.95W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6012LFV-7 DIODES INCORPORATED DMT6012LFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.7A; Idm: 170A; 1.95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34.7A
Pulsed drain current: 170A
Power dissipation: 1.95W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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S3MB-13-F S3MB-13-F DIODES INCORPORATED ds16005.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 40pF
Case: SMB
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
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RS3MB-13-F RS3MB-13-F DIODES INCORPORATED RS3A_B%7ERS3M_B.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 500ns; SMB; Ufmax: 1.3V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: reel; tape
Reverse recovery time: 0.5µs
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BZX84B3V9Q-7-F BZX84B3V9Q-7-F DIODES INCORPORATED BZX84Bxxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.9V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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BZX84B3V9-7-F BZX84B3V9-7-F DIODES INCORPORATED BZX84Bxxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.9V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
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BZT52C11-13-F BZT52C11-13-F DIODES INCORPORATED ds18004.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 11V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SDM10M45SD-7-F SDM10M45SD-7-F DIODES INCORPORATED SDM10M45SD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT26; SMD; 45V; 0.1A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT26
Mounting: SMD
Max. off-state voltage: 45V
Load current: 0.1A
Semiconductor structure: double series x2
Max. forward voltage: 0.45V
Kind of package: reel; tape
Capacitance: 6pF
Max. forward impulse current: 1A
Power dissipation: 0.225W
Leakage current: 1µA
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DDZ9702S-7 DDZ9702S-7 DIODES INCORPORATED DDZ9689-7.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOD323; single diode; reel,tape
Mounting: SMD
Power dissipation: 0.2W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
Zener voltage: 15V
Type of diode: Zener
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SMCJ48A-13-F SMCJ48A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.3÷58.9V; 19.4A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ48CA-13-F SMCJ48CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.3÷58.9V; 19.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 19.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DGD05473FNQ-7 DIODES INCORPORATED DGD05473FNQ.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Operating temperature: -40...125°C
Case: U-DFN3030-10
Topology: MOSFET half-bridge
Kind of package: reel; tape
Mounting: SMD
Output current: -2.5...1.5A
Pulse fall time: 25ns
Impulse rise time: 30ns
Number of channels: 1
Supply voltage: 4.4...14V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
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DGD05473FN-7 DIODES INCORPORATED DGD05473.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Operating temperature: -40...125°C
Case: VDFN10
Topology: MOSFET half-bridge
Kind of package: reel; tape
Mounting: SMD
Output current: -2.5...1.5A
Pulse fall time: 25ns
Impulse rise time: 30ns
Number of channels: 1
Supply voltage: 4.2...14V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
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DMS2220LFDB-7 DIODES INCORPORATED ds31546.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -12A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 1.4W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 0.12Ω
Pulsed drain current: -12A
Drain current: -3.5A
Kind of channel: enhancement
Drain-source voltage: -20V
Gate-source voltage: ±12V
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DMP3085LSD-13 DMP3085LSD.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8
Mounting: SMD
Pulsed drain current: -20A
Power dissipation: 1.1W
Polarisation: unipolar
Drain current: -3.1A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET x2
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 70mΩ
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DMC4040SSD-13 DMC4040SSD-13.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 7.3/-7.5A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.04/0.045Ω
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DMHC3025LSD-13 DMHC3025LSD.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; complementary pair; 30/-30V; 1.5W
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.5W
Gate charge: 11.7/11.4nC
Polarisation: unipolar
Drain current: 6/-4.2A
Kind of channel: enhancement
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 25/50mΩ
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DMN6040SSD-13 DMN6040SSD.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Power dissipation: 0.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMG4800LSD-13 DMG4800LSD.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.4A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 22mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP2040USD-13 DMP2040USD.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -30A; 1.6W; SO8
Mounting: SMD
Case: SO8
Pulsed drain current: -30A
Power dissipation: 1.6W
Gate charge: 19nC
Polarisation: unipolar
Drain current: -5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
On-state resistance: 52mΩ
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DMC4050SSD-13 DMC4050SSD-13.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 5.8/-5.5A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 45/45mΩ
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BZX84B27-7-F BZX84Bxx(x).pdf BZX84Bxxx.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 27V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
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FMMT549TA FMMT549.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100MHz
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FMMT549ATA FMMT549.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...500
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100MHz
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DMNH4015SSD-13 DMNH4015SSD.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMNH4015SSDQ-13 DMNH4015SSDQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BZX84C3V9TS-7-F BZX84CxxTS_SER.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
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BZX84C3V9W-7-F BZX84CxxW_SER.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
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74LVC2G17DW-7 74LVC2G17.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; SOT363; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Mounting: SMD
Case: SOT363
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of package: reel; tape
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74LVC2G17FX4-7 74LVC2G17.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1409-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Mounting: SMD
Case: X2-DFN1409-6
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of package: reel; tape
Produkt ist nicht verfügbar
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74LVC2G17FW4-7 74LVC2G17.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1010-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Mounting: SMD
Case: X2-DFN1010-6
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of package: reel; tape
Produkt ist nicht verfügbar
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74LVC2G17FZ4-7 74LVC2G17.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Mounting: SMD
Case: X2-DFN1410-6
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMBJ7.0A-13-F SMBJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.78÷8.95V; 50A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.95V
Max. forward impulse current: 50A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMAJ36CA-13-F SMAJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 95 Stücke:
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SMAJ36CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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74AHC1G126SE-7 74AHC1G126.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; AHC
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT353
Quiescent current: 40µA
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Manufacturer series: AHC
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS
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APX811-46UG-7 APX811_812.pdf
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Mounting: SMD
Kind of package: reel; tape
Active logical level: low
Integrated circuit features: manual reset
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Case: SOT143
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Number of channels: 1
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 4.63V
Produkt ist nicht verfügbar
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BZX84B11-7-F BZX84Bxxx.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 11V; SMD; SOT23; reel,tape; single diode
Kind of package: reel; tape
Case: SOT23
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±2%
Zener voltage: 11V
Semiconductor structure: single diode
Mounting: SMD
auf Bestellung 3000 Stücke:
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APX803L20-23SA-7 APX803L.pdf
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Case: SOT23
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 220ms
Supply voltage: 0.9...5.5V DC
Number of channels: 1
Threshold on-voltage: 2.3V
Integrated circuit features: ±1,5% accuracy
Produkt ist nicht verfügbar
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BZX84C15-13-F BZX84Cxx_SER.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
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DDZX15-13 ds30408.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2.5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AP7115-15SEG-7 AP7115.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT353; SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7115
Input voltage: 2.5...5.5V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Output voltage: 1.5V
Kind of package: reel; tape
Case: SOT353
Number of channels: 1
Tolerance: ±2%
Mounting: SMD
auf Bestellung 2435 Stücke:
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Mindestbestellmenge: 5 Stücke
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TLV271CW5-7 TLV27x.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; Ch: 1; Uoper: 2.7÷16V; SOT25; 110dB
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Number of channels: 1
Mounting: SMT
Case: SOT25
Operating temperature: 0...70°C
Slew rate: 2V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 5mV
Open-loop gain: 110dB
Kind of package: reel; tape
Operating voltage: 2.7...16V
Power dissipation: 0.22W
auf Bestellung 1739 Stücke:
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TLV271IW5-7 TLV27x.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; Ch: 1; Uoper: 2.7÷16V; SOT25; 110dB
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Number of channels: 1
Mounting: SMT
Case: SOT25
Operating temperature: -40...125°C
Slew rate: 2V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 5mV
Open-loop gain: 110dB
Kind of package: reel; tape
Operating voltage: 2.7...16V
Power dissipation: 0.22W
auf Bestellung 792 Stücke:
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AP3031KTR-G1 AP3031%20Datasheet.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷16VDC; Uout: 37VDC; 1.4A; SOT23-6
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...16V DC
Output voltage: 37V DC
Output current: 1.4A
Case: SOT23-6
Mounting: SMD
Frequency: 1MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Integrated circuit features: PWM
Efficiency: 92%
Application: for LED applications
auf Bestellung 3018 Stücke:
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AP3012KTR-E1 AP3012-DTE.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.6÷16VDC; Uout: 1.25÷29VDC; 0.5A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.6...16V DC
Output voltage: 1.25...29V DC
Output current: 0.5A
Case: SOT23-5
Mounting: SMD
Frequency: 1.5MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 85%
auf Bestellung 234 Stücke:
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AP3012KTR-G1 AP3012-DTE.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.6÷16VDC; Uout: 1.25÷29VDC; 0.5A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.6...16V DC
Output voltage: 1.25...29V DC
Output current: 0.5A
Case: SOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 85%
auf Bestellung 950 Stücke:
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FZT749TA FZT749.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Frequency: 160MHz
Kind of package: reel; tape
Current gain: 75...570
Quantity in set/package: 1000pcs.
Produkt ist nicht verfügbar
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FZT749TC FZT749.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 2W; SOT223-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-3
Mounting: SMD
Frequency: 160MHz
Produkt ist nicht verfügbar
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BCW68HTA BCW68H.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.31W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 1000pcs.
Produkt ist nicht verfügbar
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DESD5V0S1BLD-7B DESD5V0S1BLD.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 12A; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Breakdown voltage: 5.5V
Max. forward impulse current: 12A
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 0.1µA
Case: DFN1006-2
Type of diode: TVS
Produkt ist nicht verfügbar
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PDS1040-13 PDS1040.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Leakage current: 50mA
Max. forward impulse current: 275A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PDS1040L-13 ds30486.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 275A
Kind of package: reel; tape
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PDS1040CTL-13 ds30485.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 40V
Leakage current: 25mA
Max. forward impulse current: 110A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PDS1040Q-13 PDS1040.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Leakage current: 50mA
Max. forward impulse current: 275A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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MMSZ5231BS-7-F mmsz52xxbs_ser.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMSZ5231BQ-7-F mmsz52xxb_Ser.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 5.1V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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SMBJ6.0CA-13-F SMBJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.67V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 790 Stücke:
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DMT6012LFDF-13 DMT6012LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 1.2W
Pulsed drain current: 60A
Power dissipation: 1.2W
Gate charge: 13.6nC
Polarisation: unipolar
Drain current: 7.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 21mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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DMT6012LFDF-7 DMT6012LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 1.2W
Drain current: 7.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 21mΩ
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 1.2W
Gate charge: 13.6nC
Polarisation: unipolar
Produkt ist nicht verfügbar
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DMT6012LFV-13 DMT6012LFV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.7A; Idm: 170A; 1.95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34.7A
Pulsed drain current: 170A
Power dissipation: 1.95W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DMT6012LFV-7 DMT6012LFV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.7A; Idm: 170A; 1.95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34.7A
Pulsed drain current: 170A
Power dissipation: 1.95W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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S3MB-13-F ds16005.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 40pF
Case: SMB
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
auf Bestellung 4774 Stücke:
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RS3MB-13-F RS3A_B%7ERS3M_B.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 500ns; SMB; Ufmax: 1.3V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: reel; tape
Reverse recovery time: 0.5µs
auf Bestellung 1748 Stücke:
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BZX84B3V9Q-7-F BZX84Bxxx.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.9V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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BZX84B3V9-7-F BZX84Bxxx.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.9V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BZT52C11-13-F ds18004.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 11V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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SDM10M45SD-7-F SDM10M45SD.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT26; SMD; 45V; 0.1A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT26
Mounting: SMD
Max. off-state voltage: 45V
Load current: 0.1A
Semiconductor structure: double series x2
Max. forward voltage: 0.45V
Kind of package: reel; tape
Capacitance: 6pF
Max. forward impulse current: 1A
Power dissipation: 0.225W
Leakage current: 1µA
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DDZ9702S-7 DDZ9689-7.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOD323; single diode; reel,tape
Mounting: SMD
Power dissipation: 0.2W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
Zener voltage: 15V
Type of diode: Zener
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SMCJ48A-13-F SMCJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.3÷58.9V; 19.4A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ48CA-13-F SMCJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.3÷58.9V; 19.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 19.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DGD05473FNQ-7 DGD05473FNQ.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Operating temperature: -40...125°C
Case: U-DFN3030-10
Topology: MOSFET half-bridge
Kind of package: reel; tape
Mounting: SMD
Output current: -2.5...1.5A
Pulse fall time: 25ns
Impulse rise time: 30ns
Number of channels: 1
Supply voltage: 4.4...14V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
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DGD05473FN-7 DGD05473.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Operating temperature: -40...125°C
Case: VDFN10
Topology: MOSFET half-bridge
Kind of package: reel; tape
Mounting: SMD
Output current: -2.5...1.5A
Pulse fall time: 25ns
Impulse rise time: 30ns
Number of channels: 1
Supply voltage: 4.2...14V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
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DMS2220LFDB-7 ds31546.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -12A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 1.4W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 0.12Ω
Pulsed drain current: -12A
Drain current: -3.5A
Kind of channel: enhancement
Drain-source voltage: -20V
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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