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AP63200WU-7 AP63200WU-7 DIODES INCORPORATED AP63200-1-3-5.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 1.2÷12VDC; 2A; TSOT26
Case: TSOT26
Mounting: SMD
Kind of package: reel; tape
Frequency: 0.5MHz
Operating temperature: -40...85°C
Output current: 2A
Output voltage: 1.2...12V DC
Input voltage: 3.8...32V DC
Efficiency: 93%
Type of integrated circuit: PMIC
Topology: buck
Kind of integrated circuit: DC/DC converter
auf Bestellung 5597 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.73 EUR
137+0.52 EUR
154+0.47 EUR
160+0.45 EUR
Mindestbestellmenge: 99
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AP63203WU-7 AP63203WU-7 DIODES INCORPORATED AP63200-1-3-5.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 3.3VDC; 2A; TSOT26; SMD
Case: TSOT26
Mounting: SMD
Kind of package: reel; tape
Frequency: 1.1MHz
Operating temperature: -40...85°C
Output current: 2A
Output voltage: 3.3V DC
Input voltage: 3.8...32V DC
Efficiency: 93%
Type of integrated circuit: PMIC
Topology: buck
Kind of integrated circuit: DC/DC converter
auf Bestellung 626 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
131+0.55 EUR
141+0.51 EUR
146+0.49 EUR
151+0.48 EUR
250+0.46 EUR
500+0.45 EUR
Mindestbestellmenge: 91
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DMG4407SSS-13 DMG4407SSS-13 DIODES INCORPORATED DMG4407SSS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 1.82W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Pulsed drain current: -80A
Power dissipation: 1.82W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AP62250WU-7 AP62250WU-7 DIODES INCORPORATED AP62250.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2.5A; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 2.5A
Output voltage: 0.8...7V DC
Input voltage: 4.2...18V DC
Frequency: 1.3MHz
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
auf Bestellung 2362 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
207+0.35 EUR
232+0.31 EUR
269+0.27 EUR
329+0.22 EUR
336+0.21 EUR
Mindestbestellmenge: 167
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B530C-13-F B530C-13-F DIODES INCORPORATED B5X0C-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 300pF
Max. forward voltage: 0.55V
Max. forward impulse current: 100A
Load current: 5A
Max. off-state voltage: 30V
Kind of package: reel; tape
Case: SMC
auf Bestellung 1991 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
174+0.41 EUR
213+0.34 EUR
400+0.29 EUR
500+0.28 EUR
1000+0.26 EUR
Mindestbestellmenge: 120
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B540CQ-13-F B540CQ-13-F DIODES INCORPORATED B520C-B560C.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; 16ns; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Capacitance: 300pF
Max. forward voltage: 0.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
Reverse recovery time: 16ns
Leakage current: 20mA
Application: automotive industry
auf Bestellung 1930 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.63 EUR
144+0.5 EUR
159+0.45 EUR
221+0.32 EUR
500+0.25 EUR
1000+0.24 EUR
Mindestbestellmenge: 114
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74AHCT125S14-13 74AHCT125S14-13 DIODES INCORPORATED 74AHCT125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AHCT; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
Manufacturer series: AHCT
Produkt ist nicht verfügbar
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74AHCT125T14-13 74AHCT125T14-13 DIODES INCORPORATED 74AHCT125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; AHCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
Manufacturer series: AHCT
auf Bestellung 2733 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
290+0.25 EUR
325+0.22 EUR
376+0.19 EUR
410+0.17 EUR
500+0.16 EUR
2500+0.15 EUR
Mindestbestellmenge: 193
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PAM2841SR PAM2841SR DIODES INCORPORATED PAM2841.pdf Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 10÷40mA; MSOP8; SMD; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Case: MSOP8
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.8...5.5V DC
Output current: 10...40mA
auf Bestellung 1663 Stücke:
Lieferzeit 14-21 Tag (e)
85+0.84 EUR
119+0.6 EUR
133+0.54 EUR
152+0.47 EUR
250+0.44 EUR
Mindestbestellmenge: 85
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PAM2804AAB010
+1
 		PAM2804AAB010 DIODES INCORPORATED PAM2804.pdf Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 1A; TSOT25; SMD; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Output current: 1A
Case: TSOT25
Mounting: SMD
Topology: buck
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Integrated circuit features: PWM
Operating voltage: 2.5...6V DC
auf Bestellung 1035 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
184+0.39 EUR
207+0.35 EUR
237+0.3 EUR
250+0.29 EUR
Mindestbestellmenge: 129
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1N4148WT-7 1N4148WT-7 DIODES INCORPORATED 1N4148WT.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.25A; 4ns; SOD523; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD523
Max. forward voltage: 1V
Kind of package: reel; tape
auf Bestellung 8124 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
926+0.077 EUR
1303+0.055 EUR
1684+0.042 EUR
1894+0.038 EUR
3000+0.031 EUR
Mindestbestellmenge: 625
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1N4148WTQ-7 1N4148WTQ-7 DIODES INCORPORATED 1N4148WT.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 4ns; SOD523; Ufmax: 0.715V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. load current: 0.25A
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 3014 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
625+0.11 EUR
685+0.1 EUR
942+0.076 EUR
1279+0.056 EUR
1507+0.047 EUR
3000+0.039 EUR
Mindestbestellmenge: 556
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SMAJ30CA-13-F SMAJ30CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 4894 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
302+0.24 EUR
350+0.2 EUR
538+0.13 EUR
625+0.11 EUR
736+0.097 EUR
794+0.09 EUR
1000+0.086 EUR
Mindestbestellmenge: 250
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SMAJ30CAQ-13-F SMAJ30CAQ-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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MMDT5551-7-F MMDT5551-7-F DIODES INCORPORATED ds30172.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 80...250
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 2229 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
278+0.26 EUR
417+0.17 EUR
497+0.14 EUR
722+0.099 EUR
1000+0.086 EUR
Mindestbestellmenge: 193
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DMMT5551-7-F DMMT5551-7-F DIODES INCORPORATED DMMT5551.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT26
Current gain: 50...250
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
auf Bestellung 1791 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
214+0.33 EUR
311+0.23 EUR
368+0.19 EUR
521+0.14 EUR
1000+0.12 EUR
1500+0.11 EUR
Mindestbestellmenge: 152
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BAS70-05Q-7-F BAS70-05Q-7-F DIODES INCORPORATED BAS70-05Q-BAS70-06Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
Capacitance: 2pF
Max. forward impulse current: 0.1A
auf Bestellung 2190 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
329+0.22 EUR
517+0.14 EUR
629+0.11 EUR
964+0.074 EUR
1139+0.063 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
ZXTR2005Z-13 ZXTR2005Z-13 DIODES INCORPORATED ZXTR2005Z.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.038A; SOT89; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 38mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±10%
Number of channels: 1
Input voltage: 10...100V
auf Bestellung 2273 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
207+0.35 EUR
234+0.31 EUR
274+0.26 EUR
304+0.24 EUR
329+0.22 EUR
360+0.2 EUR
500+0.19 EUR
Mindestbestellmenge: 167
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BSS84Q-13-F BSS84Q-13-F DIODES INCORPORATED BSS84.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -130mA
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BSS84Q-7-F BSS84Q-7-F DIODES INCORPORATED BSS84.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -130mA
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
232+0.31 EUR
Mindestbestellmenge: 232
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BSS84W-7-F BSS84W-7-F DIODES INCORPORATED BSS84W.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.2W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -130mA
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 3311 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
532+0.13 EUR
665+0.11 EUR
735+0.097 EUR
932+0.077 EUR
1040+0.069 EUR
3000+0.057 EUR
Mindestbestellmenge: 385
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BAW56T-7-F BAW56T-7-F DIODES INCORPORATED BAW56T.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 75mA; 4ns; SOT523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 75mA
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Capacitance: 1.5pF
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Features of semiconductor devices: small signal
auf Bestellung 684 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
358+0.2 EUR
684+0.1 EUR
Mindestbestellmenge: 250
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BAW56W-7-F
+1
 		BAW56W-7-F DIODES INCORPORATED BAW56W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT323; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT323
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
Features of semiconductor devices: small signal
auf Bestellung 2798 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
782+0.092 EUR
926+0.077 EUR
1421+0.05 EUR
2058+0.035 EUR
2337+0.031 EUR
Mindestbestellmenge: 625
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BAS16LP-7 BAS16LP-7 DIODES INCORPORATED BAS16LP.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; DFN2; Ufmax: 1.25V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DFN2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
Mindestbestellmenge: 95
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AL5801W6-7 AL5801W6-7 DIODES INCORPORATED AL5801.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 350mA; Ch: 1; PWM
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Output current: 0.35A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 5...100V DC
Integrated circuit features: PWM
auf Bestellung 769 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
177+0.4 EUR
199+0.36 EUR
206+0.35 EUR
Mindestbestellmenge: 125
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BC846BW-7-F BC846BW-7-F DIODES INCORPORATED BC846_7_8W.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
auf Bestellung 1498 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
625+0.11 EUR
953+0.075 EUR
1475+0.048 EUR
1498+0.047 EUR
Mindestbestellmenge: 556
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LM2903QS-13 LM2903QS-13 DIODES INCORPORATED LM290xxQ.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 200nA
Input offset current: 200nA
Input offset voltage: 15mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
Kind of output: open collector
Type of integrated circuit: comparator
Case: SO8
Kind of comparator: universal
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
auf Bestellung 2302 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
235+0.3 EUR
293+0.24 EUR
407+0.18 EUR
496+0.14 EUR
538+0.13 EUR
Mindestbestellmenge: 143
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BAV199WQ-7 BAV199WQ-7 DIODES INCORPORATED BAV199WQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT323; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.16A
Reverse recovery time: 3µs
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
auf Bestellung 1948 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
569+0.13 EUR
837+0.086 EUR
953+0.075 EUR
1306+0.055 EUR
1507+0.047 EUR
1640+0.044 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
BAT54AW-7-F BAT54AW-7-F DIODES INCORPORATED BAT54W_AW_CW_SW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
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DMT6009LCT DIODES INCORPORATED DMT6009LCT.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 14.5mΩ
Power dissipation: 2.2W
Drain current: 29.8A
Gate-source voltage: ±16V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6009LFG-13 DIODES INCORPORATED DMT6009LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 11.7mΩ
Power dissipation: 2.08W
Drain current: 9A
Gate-source voltage: ±16V
Pulsed drain current: 90A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6009LK3-13 DIODES INCORPORATED DMT6009LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12.8mΩ
Power dissipation: 2.6W
Drain current: 10.6A
Gate-source voltage: ±16V
Pulsed drain current: 90A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6009LPS-13 DIODES INCORPORATED DMT6009LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 2.3W
Drain current: 9.1A
Gate-source voltage: ±16V
Pulsed drain current: 160A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6009LSS-13 DMT6009LSS-13 DIODES INCORPORATED DMT6009LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 1.6W
Drain current: 11.5A
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6010LFG-13 DIODES INCORPORATED DMT6010LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 25A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6010LFG-7 DIODES INCORPORATED DMT6010LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6010LPS-13 DIODES INCORPORATED DMT6010LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 12mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 125A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6011LSS-13 DMT6011LSS-13 DIODES INCORPORATED DMT6011LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14.5mΩ
Power dissipation: 2.1W
Drain current: 8.5A
Gate-source voltage: ±20V
Pulsed drain current: 85A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6012LSS-13 DMT6012LSS-13 DIODES INCORPORATED DMT6012LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14mΩ
Power dissipation: 1.84W
Drain current: 8.4A
Gate-source voltage: ±20V
Pulsed drain current: 65A
Drain-source voltage: 60V
Kind of channel: enhancement
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BC847CQ-7-F BC847CQ-7-F Diodes Incorporated ds11108.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
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BC847CT-7-F BC847CT-7-F Diodes Incorporated BC847xT.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 518 Stücke:
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BC847CW-13-F BC847CW-13-F Diodes Incorporated BC846_7_8W.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
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BC847CW-7-F BC847CW-7-F Diodes Incorporated BC846_7_8W.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
auf Bestellung 6058 Stücke:
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610+0.12 EUR
642+0.11 EUR
1011+0.071 EUR
1553+0.046 EUR
1839+0.039 EUR
3000+0.031 EUR
6000+0.027 EUR
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BAT54SW-13-F BAT54SW-13-F DIODES INCORPORATED BAT54W_AW_CW_SW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
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BAT54SW-7-F
+1
 		BAT54SW-7-F DIODES INCORPORATED BAT54W_AW_CW_SW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
auf Bestellung 6419 Stücke:
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334+0.21 EUR
506+0.14 EUR
642+0.11 EUR
918+0.078 EUR
1330+0.054 EUR
1534+0.047 EUR
3000+0.039 EUR
6000+0.035 EUR
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BAT54SWQ-7-F BAT54SWQ-7-F DIODES INCORPORATED SWQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Application: automotive industry
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455+0.16 EUR
490+0.14 EUR
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BC847BT-7-F BC847BT-7-F DIODES INCORPORATED BC847xT.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 8691 Stücke:
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417+0.17 EUR
650+0.11 EUR
944+0.076 EUR
1134+0.063 EUR
1931+0.037 EUR
2632+0.027 EUR
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DMTH6004SK3Q-13 DMTH6004SK3Q-13 DIODES INCORPORATED DMTH6004SK3Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252
Case: TO252
Mounting: SMD
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 3.8mΩ
Power dissipation: 3.9W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 100A
Application: automotive industry
Kind of channel: enhancement
auf Bestellung 997 Stücke:
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50+1.46 EUR
55+1.3 EUR
60+1.2 EUR
69+1.04 EUR
100+1.02 EUR
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BAV99Q-13-F BAV99Q-13-F DIODES INCORPORATED BAV99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAV99T-7-F BAV99T-7-F DIODES INCORPORATED BAS16T_BAW56T_BAV70T_BAV99T.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 2538 Stücke:
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417+0.17 EUR
521+0.14 EUR
569+0.13 EUR
779+0.092 EUR
1040+0.069 EUR
1208+0.059 EUR
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SMBJ12CA-13-F SMBJ12CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1359 Stücke:
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193+0.37 EUR
239+0.3 EUR
272+0.26 EUR
443+0.16 EUR
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1000+0.1 EUR
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HD01-T HD01-T DIODES INCORPORATED HD01.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 0.8A; Ifsm: 30A; MiniDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 0.8A
Max. forward impulse current: 30A
Case: MiniDIP
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 1869 Stücke:
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177+0.41 EUR
321+0.22 EUR
500+0.15 EUR
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BAT54AWQ-7-F BAT54AWQ-7-F DIODES INCORPORATED SWQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
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ZTL431AQFTA ZTL431AQFTA DIODES INCORPORATED ZTL431,432.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
auf Bestellung 2990 Stücke:
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228+0.31 EUR
341+0.21 EUR
385+0.19 EUR
447+0.16 EUR
481+0.15 EUR
506+0.14 EUR
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LMV358M8G-13 LMV358M8G-13 DIODES INCORPORATED LMV321_358.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; Uoper: 2.7÷5.5V; MSOP8; 10dB
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Operating voltage: 2.7...5.5V
Mounting: SMT
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 1V/μs
Open-loop gain: 10dB
Integrated circuit features: rail-to-rail output
Input offset voltage: 7mV
Kind of package: reel; tape
auf Bestellung 2470 Stücke:
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173+0.41 EUR
209+0.34 EUR
236+0.3 EUR
275+0.26 EUR
334+0.21 EUR
365+0.2 EUR
500+0.19 EUR
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DMG6402LVT-7 DMG6402LVT-7 DIODES INCORPORATED DMG6402LVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: TSOT26
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 42mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
auf Bestellung 2306 Stücke:
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167+0.43 EUR
199+0.36 EUR
233+0.31 EUR
313+0.23 EUR
511+0.14 EUR
782+0.092 EUR
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ZTL432AFTA ZTL432AFTA DIODES INCORPORATED ZTL431,432.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 1542 Stücke:
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228+0.31 EUR
343+0.21 EUR
385+0.19 EUR
455+0.16 EUR
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DMT3020LFDB-13 DIODES INCORPORATED DMT3020LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
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DMT3020LFDB-7 DIODES INCORPORATED DMT3020LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
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DMT3020LFDBQ-13 DIODES INCORPORATED DMT3020LFDBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
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AP63200WU-7 AP63200-1-3-5.pdf
AP63200WU-7
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 1.2÷12VDC; 2A; TSOT26
Case: TSOT26
Mounting: SMD
Kind of package: reel; tape
Frequency: 0.5MHz
Operating temperature: -40...85°C
Output current: 2A
Output voltage: 1.2...12V DC
Input voltage: 3.8...32V DC
Efficiency: 93%
Type of integrated circuit: PMIC
Topology: buck
Kind of integrated circuit: DC/DC converter
auf Bestellung 5597 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
137+0.52 EUR
154+0.47 EUR
160+0.45 EUR
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AP63203WU-7 AP63200-1-3-5.pdf
AP63203WU-7
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 3.3VDC; 2A; TSOT26; SMD
Case: TSOT26
Mounting: SMD
Kind of package: reel; tape
Frequency: 1.1MHz
Operating temperature: -40...85°C
Output current: 2A
Output voltage: 3.3V DC
Input voltage: 3.8...32V DC
Efficiency: 93%
Type of integrated circuit: PMIC
Topology: buck
Kind of integrated circuit: DC/DC converter
auf Bestellung 626 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
131+0.55 EUR
141+0.51 EUR
146+0.49 EUR
151+0.48 EUR
250+0.46 EUR
500+0.45 EUR
Mindestbestellmenge: 91
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DMG4407SSS-13 DMG4407SSS.pdf
DMG4407SSS-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 1.82W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Pulsed drain current: -80A
Power dissipation: 1.82W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AP62250WU-7 AP62250.pdf
AP62250WU-7
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2.5A; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 2.5A
Output voltage: 0.8...7V DC
Input voltage: 4.2...18V DC
Frequency: 1.3MHz
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
auf Bestellung 2362 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
207+0.35 EUR
232+0.31 EUR
269+0.27 EUR
329+0.22 EUR
336+0.21 EUR
Mindestbestellmenge: 167
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B530C-13-F B5X0C-DTE.pdf
B530C-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 300pF
Max. forward voltage: 0.55V
Max. forward impulse current: 100A
Load current: 5A
Max. off-state voltage: 30V
Kind of package: reel; tape
Case: SMC
auf Bestellung 1991 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
174+0.41 EUR
213+0.34 EUR
400+0.29 EUR
500+0.28 EUR
1000+0.26 EUR
Mindestbestellmenge: 120
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B540CQ-13-F B520C-B560C.pdf
B540CQ-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; 16ns; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Capacitance: 300pF
Max. forward voltage: 0.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
Reverse recovery time: 16ns
Leakage current: 20mA
Application: automotive industry
auf Bestellung 1930 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
144+0.5 EUR
159+0.45 EUR
221+0.32 EUR
500+0.25 EUR
1000+0.24 EUR
Mindestbestellmenge: 114
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74AHCT125S14-13 74AHCT125.pdf
74AHCT125S14-13
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AHCT; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
Manufacturer series: AHCT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AHCT125T14-13 74AHCT125.pdf
74AHCT125T14-13
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; AHCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
Manufacturer series: AHCT
auf Bestellung 2733 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
290+0.25 EUR
325+0.22 EUR
376+0.19 EUR
410+0.17 EUR
500+0.16 EUR
2500+0.15 EUR
Mindestbestellmenge: 193
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PAM2841SR PAM2841.pdf
PAM2841SR
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 10÷40mA; MSOP8; SMD; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Case: MSOP8
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.8...5.5V DC
Output current: 10...40mA
auf Bestellung 1663 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
119+0.6 EUR
133+0.54 EUR
152+0.47 EUR
250+0.44 EUR
Mindestbestellmenge: 85
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PAM2804AAB010 PAM2804.pdf
PAM2804AAB010
+1
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 1A; TSOT25; SMD; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Output current: 1A
Case: TSOT25
Mounting: SMD
Topology: buck
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Integrated circuit features: PWM
Operating voltage: 2.5...6V DC
auf Bestellung 1035 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
184+0.39 EUR
207+0.35 EUR
237+0.3 EUR
250+0.29 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
1N4148WT-7 1N4148WT.pdf
1N4148WT-7
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.25A; 4ns; SOD523; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD523
Max. forward voltage: 1V
Kind of package: reel; tape
auf Bestellung 8124 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
926+0.077 EUR
1303+0.055 EUR
1684+0.042 EUR
1894+0.038 EUR
3000+0.031 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
1N4148WTQ-7 1N4148WT.pdf
1N4148WTQ-7
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 4ns; SOD523; Ufmax: 0.715V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. load current: 0.25A
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 3014 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
625+0.11 EUR
685+0.1 EUR
942+0.076 EUR
1279+0.056 EUR
1507+0.047 EUR
3000+0.039 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ30CA-13-F SMAJ_ser.pdf
SMAJ30CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 4894 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
302+0.24 EUR
350+0.2 EUR
538+0.13 EUR
625+0.11 EUR
736+0.097 EUR
794+0.09 EUR
1000+0.086 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ30CAQ-13-F SMAJ_ser.pdf
SMAJ30CAQ-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMDT5551-7-F ds30172.pdf
MMDT5551-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 80...250
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 2229 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
278+0.26 EUR
417+0.17 EUR
497+0.14 EUR
722+0.099 EUR
1000+0.086 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
DMMT5551-7-F DMMT5551.pdf
DMMT5551-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT26
Current gain: 50...250
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
auf Bestellung 1791 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
214+0.33 EUR
311+0.23 EUR
368+0.19 EUR
521+0.14 EUR
1000+0.12 EUR
1500+0.11 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
BAS70-05Q-7-F BAS70-05Q-BAS70-06Q.pdf
BAS70-05Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
Capacitance: 2pF
Max. forward impulse current: 0.1A
auf Bestellung 2190 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
329+0.22 EUR
517+0.14 EUR
629+0.11 EUR
964+0.074 EUR
1139+0.063 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
ZXTR2005Z-13 ZXTR2005Z.pdf
ZXTR2005Z-13
Hersteller: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.038A; SOT89; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 38mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±10%
Number of channels: 1
Input voltage: 10...100V
auf Bestellung 2273 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
207+0.35 EUR
234+0.31 EUR
274+0.26 EUR
304+0.24 EUR
329+0.22 EUR
360+0.2 EUR
500+0.19 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
BSS84Q-13-F BSS84.pdf
BSS84Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -130mA
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS84Q-7-F BSS84.pdf
BSS84Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -130mA
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
232+0.31 EUR
Mindestbestellmenge: 232
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BSS84W-7-F BSS84W.pdf
BSS84W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.2W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -130mA
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 3311 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
532+0.13 EUR
665+0.11 EUR
735+0.097 EUR
932+0.077 EUR
1040+0.069 EUR
3000+0.057 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BAW56T-7-F BAW56T.pdf
BAW56T-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 75mA; 4ns; SOT523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 75mA
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Capacitance: 1.5pF
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Features of semiconductor devices: small signal
auf Bestellung 684 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
358+0.2 EUR
684+0.1 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
BAW56W-7-F BAW56W.pdf
BAW56W-7-F
+1
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT323; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT323
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
Features of semiconductor devices: small signal
auf Bestellung 2798 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
782+0.092 EUR
926+0.077 EUR
1421+0.05 EUR
2058+0.035 EUR
2337+0.031 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
BAS16LP-7 BAS16LP.pdf
BAS16LP-7
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; DFN2; Ufmax: 1.25V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DFN2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
AL5801W6-7 AL5801.pdf
AL5801W6-7
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 350mA; Ch: 1; PWM
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Output current: 0.35A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 5...100V DC
Integrated circuit features: PWM
auf Bestellung 769 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
177+0.4 EUR
199+0.36 EUR
206+0.35 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
BC846BW-7-F BC846_7_8W.pdf
BC846BW-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
auf Bestellung 1498 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
625+0.11 EUR
953+0.075 EUR
1475+0.048 EUR
1498+0.047 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
LM2903QS-13 LM290xxQ.pdf
LM2903QS-13
Hersteller: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 200nA
Input offset current: 200nA
Input offset voltage: 15mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
Kind of output: open collector
Type of integrated circuit: comparator
Case: SO8
Kind of comparator: universal
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
auf Bestellung 2302 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
235+0.3 EUR
293+0.24 EUR
407+0.18 EUR
496+0.14 EUR
538+0.13 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
BAV199WQ-7 BAV199WQ.pdf
BAV199WQ-7
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT323; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.16A
Reverse recovery time: 3µs
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
auf Bestellung 1948 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
569+0.13 EUR
837+0.086 EUR
953+0.075 EUR
1306+0.055 EUR
1507+0.047 EUR
1640+0.044 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
BAT54AW-7-F BAT54W_AW_CW_SW.pdf
BAT54AW-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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DMT6009LCT DMT6009LCT.pdf
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 14.5mΩ
Power dissipation: 2.2W
Drain current: 29.8A
Gate-source voltage: ±16V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6009LFG-13 DMT6009LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 11.7mΩ
Power dissipation: 2.08W
Drain current: 9A
Gate-source voltage: ±16V
Pulsed drain current: 90A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6009LK3-13 DMT6009LK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12.8mΩ
Power dissipation: 2.6W
Drain current: 10.6A
Gate-source voltage: ±16V
Pulsed drain current: 90A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6009LPS-13 DMT6009LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 2.3W
Drain current: 9.1A
Gate-source voltage: ±16V
Pulsed drain current: 160A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6009LSS-13 DMT6009LSS.pdf
DMT6009LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 1.6W
Drain current: 11.5A
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6010LFG-13 DMT6010LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 25A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6010LFG-7 DMT6010LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6010LPS-13 DMT6010LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 12mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 125A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6011LSS-13 DMT6011LSS.pdf
DMT6011LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14.5mΩ
Power dissipation: 2.1W
Drain current: 8.5A
Gate-source voltage: ±20V
Pulsed drain current: 85A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6012LSS-13 DMT6012LSS.pdf
DMT6012LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14mΩ
Power dissipation: 1.84W
Drain current: 8.4A
Gate-source voltage: ±20V
Pulsed drain current: 65A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BC847CQ-7-F ds11108.pdf
BC847CQ-7-F
Hersteller: Diodes Incorporated
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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BC847CT-7-F BC847xT.pdf
BC847CT-7-F
Hersteller: Diodes Incorporated
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 518 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
432+0.17 EUR
496+0.14 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
BC847CW-13-F BC846_7_8W.pdf
BC847CW-13-F
Hersteller: Diodes Incorporated
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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BC847CW-7-F BC846_7_8W.pdf
BC847CW-7-F
Hersteller: Diodes Incorporated
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
auf Bestellung 6058 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
610+0.12 EUR
642+0.11 EUR
1011+0.071 EUR
1553+0.046 EUR
1839+0.039 EUR
3000+0.031 EUR
6000+0.027 EUR
Mindestbestellmenge: 556
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BAT54SW-13-F BAT54W_AW_CW_SW.pdf
BAT54SW-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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BAT54SW-7-F BAT54W_AW_CW_SW.pdf
BAT54SW-7-F
+1
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
auf Bestellung 6419 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
506+0.14 EUR
642+0.11 EUR
918+0.078 EUR
1330+0.054 EUR
1534+0.047 EUR
3000+0.039 EUR
6000+0.035 EUR
Mindestbestellmenge: 334
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BAT54SWQ-7-F SWQ.pdf
BAT54SWQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
490+0.14 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
BC847BT-7-F BC847xT.pdf
BC847BT-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 8691 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
650+0.11 EUR
944+0.076 EUR
1134+0.063 EUR
1931+0.037 EUR
2632+0.027 EUR
Mindestbestellmenge: 417
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DMTH6004SK3Q-13 DMTH6004SK3Q.pdf
DMTH6004SK3Q-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252
Case: TO252
Mounting: SMD
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 3.8mΩ
Power dissipation: 3.9W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 100A
Application: automotive industry
Kind of channel: enhancement
auf Bestellung 997 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.46 EUR
55+1.3 EUR
60+1.2 EUR
69+1.04 EUR
100+1.02 EUR
Mindestbestellmenge: 50
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BAV99Q-13-F BAV99.pdf
BAV99Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
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BAV99T-7-F BAS16T_BAW56T_BAV70T_BAV99T.pdf
BAV99T-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 2538 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
521+0.14 EUR
569+0.13 EUR
779+0.092 EUR
1040+0.069 EUR
1208+0.059 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ12CA-13-F SMBJ_ser.pdf
SMBJ12CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1359 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
239+0.3 EUR
272+0.26 EUR
443+0.16 EUR
610+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 193
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HD01-T HD01.pdf
HD01-T
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 0.8A; Ifsm: 30A; MiniDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 0.8A
Max. forward impulse current: 30A
Case: MiniDIP
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 1869 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
153+0.47 EUR
177+0.41 EUR
321+0.22 EUR
500+0.15 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
BAT54AWQ-7-F SWQ.pdf
BAT54AWQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
Produkt ist nicht verfügbar
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ZTL431AQFTA ZTL431,432.pdf
ZTL431AQFTA
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
341+0.21 EUR
385+0.19 EUR
447+0.16 EUR
481+0.15 EUR
506+0.14 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
LMV358M8G-13 LMV321_358.pdf
LMV358M8G-13
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; Uoper: 2.7÷5.5V; MSOP8; 10dB
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Operating voltage: 2.7...5.5V
Mounting: SMT
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 1V/μs
Open-loop gain: 10dB
Integrated circuit features: rail-to-rail output
Input offset voltage: 7mV
Kind of package: reel; tape
auf Bestellung 2470 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
209+0.34 EUR
236+0.3 EUR
275+0.26 EUR
334+0.21 EUR
365+0.2 EUR
500+0.19 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
DMG6402LVT-7 DMG6402LVT.pdf
DMG6402LVT-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: TSOT26
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 42mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
auf Bestellung 2306 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
199+0.36 EUR
233+0.31 EUR
313+0.23 EUR
511+0.14 EUR
782+0.092 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
ZTL432AFTA ZTL431,432.pdf
ZTL432AFTA
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 1542 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
343+0.21 EUR
385+0.19 EUR
455+0.16 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
DMT3020LFDB-13 DMT3020LFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT3020LFDB-7 DMT3020LFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT3020LFDBQ-13 DMT3020LFDBQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Produkt ist nicht verfügbar
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