Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (72396) > Seite 1191 nach 1207
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DDTB143EC-7-F | DIODES INCORPORATED |
 Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 500mA; 200mW; SOT23; R1: 4.7kΩ Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Case: SOT23 Mounting: SMD Type of transistor: PNP Power dissipation: 0.2W Collector current: 0.5A Current gain: 100...600 Collector-emitter voltage: 50V Base resistor: 4.7kΩ Quantity in set/package: 3000pcs. Base-emitter resistor: 4.7kΩ Frequency: 200MHz |
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DDTB143EU-7-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 200mW; SOT323; R1: 4.7kΩ Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Case: SOT323 Mounting: SMD Type of transistor: PNP Power dissipation: 0.2W Collector current: 0.5A Current gain: 100...600 Collector-emitter voltage: 50V Base resistor: 4.7kΩ Quantity in set/package: 3000pcs. Base-emitter resistor: 4.7kΩ Frequency: 200MHz |
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BZX84C33-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 33V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
auf Bestellung 1004 Stücke: Lieferzeit 14-21 Tag (e) |
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| BZX84C33Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 33V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
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BZX84C33-13-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 33V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
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BZX84C33T-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.15W; 33V; SMD; reel,tape; SOT523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 33V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT523 Semiconductor structure: single diode |
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| BZX84C33Q-13-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 350mW; 33V; SMD; SOT23 Type of diode: Zener Power dissipation: 0.35W Zener voltage: 33V Mounting: SMD Tolerance: ±6.1% Case: SOT23 |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| AP2303MPTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; PSOP8 Type of integrated circuit: PMIC Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Output voltage: 0.6...3.3V Output current: 1.75A Operating voltage: 1.2...5.5/3...5.5V DC Number of channels: 1 Application: for DDR memories Kind of integrated circuit: DDR memory termination regulator Case: PSOP8 |
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AP2303MTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; SO8 Type of integrated circuit: PMIC Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Output voltage: 0.6...3.3V Output current: 1.75A Operating voltage: 1.2...5.5/3...5.5V DC Number of channels: 1 Application: for DDR memories Kind of integrated circuit: DDR memory termination regulator Case: SO8 |
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| MJD340-13 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK,TO252 Mounting: SMD Type of transistor: NPN Kind of package: reel; tape Collector current: 0.5A Pulsed collector current: 0.75A Power dissipation: 15W Current gain: 30...240 Collector-emitter voltage: 300V Quantity in set/package: 2500pcs. Frequency: 10MHz Case: DPAK; TO252 Polarisation: bipolar |
auf Bestellung 2480 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2078LCA3-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W Kind of package: 7 inch reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: X4-DSN1006-3 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -13A Drain current: -2.7A Gate charge: 1.6nC On-state resistance: 0.6Ω Power dissipation: 1.4W Gate-source voltage: ±12V |
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SMAJ40CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 6.2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
auf Bestellung 557 Stücke: Lieferzeit 14-21 Tag (e) |
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| SMAJ40CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 6.2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Application: automotive industry Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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| BAV116WS-7 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD323 Max. forward voltage: 1.25V Kind of package: reel; tape |
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BAV116WSQ-7 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD323 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry |
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74LVC86AT14-13 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC Type of integrated circuit: digital Kind of gate: XOR Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
auf Bestellung 2222 Stücke: Lieferzeit 14-21 Tag (e) |
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S1M-13-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape Capacitance: 10pF |
auf Bestellung 13713 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C2V7Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 2.7V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 2.7V Mounting: SMD Tolerance: ±7.5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
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| BZX84C2V7T-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.15W; 2.7V; SMD; reel,tape; SOT523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 2.7V Mounting: SMD Tolerance: ±7% Case: SOT523 Kind of package: reel; tape Semiconductor structure: single diode |
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BZX84C2V7TS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 2.7V; SMD; reel,tape; SOT363 Type of diode: Zener Power dissipation: 0.2W Zener voltage: 2.7V Mounting: SMD Tolerance: ±7.5% Case: SOT363 Kind of package: reel; tape Semiconductor structure: triple independent |
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BZX84C2V7W-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 2.7V; SMD; reel,tape; SOT323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 2.7V Mounting: SMD Tolerance: ±7.5% Case: SOT323 Kind of package: reel; tape Semiconductor structure: single diode |
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SMAJ60CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 4.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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| SMAJ60CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 4.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Application: automotive industry Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMCJ5.0A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 163A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| SMCJ5.0AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 163A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
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| 3.0SMCJ5.0A-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 6.4÷7.07V; 326.1A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 326.1A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| PDS835L-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; PowerDI®5; SMD; 35V; 8A; reel,tape Type of diode: Schottky rectifying Case: PowerDI®5 Mounting: SMD Max. off-state voltage: 35V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.51V Max. forward impulse current: 120A Kind of package: reel; tape Leakage current: 35mA |
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| PDS835L-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; PowerDI®5; SMD; 35V; 8A; reel,tape Type of diode: Schottky rectifying Case: PowerDI®5 Mounting: SMD Max. off-state voltage: 35V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.51V Max. forward impulse current: 120A Kind of package: reel; tape Leakage current: 35mA |
Produkt ist nicht verfügbar |
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SMAZ6V8-13-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 6.8V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 6.8V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode |
auf Bestellung 62 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH10H4M6SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Power dissipation: 2.7W Case: PowerDI5060-8 On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 66nC Pulsed drain current: 400A Kind of channel: enhancement Drain current: 14A Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
Produkt ist nicht verfügbar |
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| DMTH10H4M6SPSWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.7W; PowerDI5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Power dissipation: 4.7W Case: PowerDI5060-8 On-state resistance: 4.9mΩ Mounting: SMD Gate charge: 66nC Application: automotive industry |
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| DMTH6006SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12.6A; Idm: 400A; 2.94W Kind of channel: enhancement Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 400A Drain current: 12.6A Drain-source voltage: 60V Gate charge: 27.9nC On-state resistance: 6.2mΩ Power dissipation: 2.94W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
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| DMP4006SPSWQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -92A; Idm: -460A; 3.4W Case: PowerDI5060-8 Mounting: SMD Kind of package: 13 inch reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -460A Drain current: -92A Drain-source voltage: -40V Gate charge: 162nC On-state resistance: 7.9mΩ Power dissipation: 3.4W Gate-source voltage: ±20V Application: automotive industry Kind of channel: enhancement |
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BAS70W-04-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: double series Max. forward voltage: 1V Kind of package: reel; tape Max. forward impulse current: 0.1A |
auf Bestellung 1880 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002H-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.37W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Power dissipation: 0.37W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
auf Bestellung 9092 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002A-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.14A; Idm: 0.8A; 0.37W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.14A Power dissipation: 0.37W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A Version: ESD |
auf Bestellung 1485 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.37W; SOT23; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Power dissipation: 0.37W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Application: automotive industry |
Produkt ist nicht verfügbar |
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| 2N7002H-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; 510mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Power dissipation: 0.51W Case: SOT23 On-state resistance: 7.5Ω Mounting: SMD |
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| 2N7002EQ-7-F | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 292mA; Idm: 1A; 700mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 292mA Power dissipation: 0.7W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.5nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Pulsed drain current: 1A |
Produkt ist nicht verfügbar |
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KBJ408G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 4A Max. forward impulse current: 120A Version: flat Case: KBJ Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
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| KBP408G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 130A Max. off-state voltage: 0.8kV Load current: 4A Case: KBP Kind of package: tube Max. forward impulse current: 130A Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Max. forward voltage: 1.1V Electrical mounting: THT Version: flat Leads: flat pin |
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| D1213A-01T-7 | DIODES INCORPORATED |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; unidirectional; SOD523; Ch: 1; reel,tape Type of diode: TVS array Breakdown voltage: 6V Semiconductor structure: unidirectional Mounting: SMD Case: SOD523 Max. off-state voltage: 3.3V Leakage current: 1µA Number of channels: 1 Capacitance: 1.2pF Application: automotive industry Kind of package: reel; tape |
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FZT600TA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 2A Power dissipation: 3W Case: SOT223 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 250MHz |
auf Bestellung 1850 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT32M5LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 67.7nC Kind of channel: enhancement Pulsed drain current: 350A Kind of package: 7 inch reel; tape |
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| DMT32M5LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 120A Power dissipation: 3.2W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 68nC Kind of channel: enhancement Pulsed drain current: 350A Kind of package: 13 inch reel; tape |
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| DMT32M5LPSW-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.2W; PowerDI5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Power dissipation: 3.2W Case: PowerDI5060-8 On-state resistance: 2mΩ Mounting: SMD Gate charge: 34nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| DMT69M5LCG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11.7A Power dissipation: 2.64W Case: V-DFN3333-8 Gate-source voltage: ±20V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 28.4nC Kind of channel: enhancement Pulsed drain current: 208A Kind of package: 7 inch reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| DMT69M5LFVWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11.9A Power dissipation: 2.74W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 28.4nC Kind of channel: enhancement Pulsed drain current: 160A Kind of package: 13 inch reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| DMT69M5LH3 | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 300A; 3.3W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Power dissipation: 3.3W Case: TO251 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 28.4nC Kind of channel: enhancement Pulsed drain current: 300A Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| DMTH45M5LPSWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 86A; Idm: 344A; 72W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 86A Power dissipation: 72W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 13.9nC Kind of channel: enhancement Pulsed drain current: 344A Kind of package: 13 inch reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| DMT10H4M5LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 2.3W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 80nC Kind of channel: enhancement Pulsed drain current: 400A Kind of package: 13 inch reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| DMTH32M5LPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 120A Power dissipation: 3.2W Case: PowerDI5060-8 Gate-source voltage: ±16V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 68nC Kind of channel: enhancement Pulsed drain current: 350A Kind of package: 13 inch reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| DMTH45M5LPDWQ-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Power dissipation: 3W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 7.9mΩ Mounting: SMD Gate charge: 13.9nC Kind of channel: enhancement Pulsed drain current: 316A Kind of package: 13 inch reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| DMTH63M5LFGQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90.3A; 3.4W; PowerDI3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 90.3A Power dissipation: 3.4W Case: PowerDI3333-8 On-state resistance: 4mΩ Mounting: SMD Gate charge: 41.2nC Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| DMTH10H4M5LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 14A Power dissipation: 2.7W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 80nC Kind of channel: enhancement Pulsed drain current: 400A Kind of package: 13 inch reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
|
|
MMBT6427-7-F | DIODES INCORPORATED |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 40V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Quantity in set/package: 3000pcs. |
auf Bestellung 2399 Stücke: Lieferzeit 14-21 Tag (e) |
|
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| DMG7408SFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W Case: PowerDI3333-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Gate charge: 17nC On-state resistance: 33mΩ Power dissipation: 2.1W Drain current: 7.5A Gate-source voltage: ±20V Drain-source voltage: 30V Pulsed drain current: 66A Polarisation: unipolar Kind of package: 7 inch reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| ZXTP07040DFFTA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 3A; 1.5W; SOT23F Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 3A Power dissipation: 1.5W Case: SOT23F Mounting: SMD Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 |
AP8803WTG-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver; buck; LED driver; TSOT25; 1A; Ch: 1; PWM,linear dimming Type of integrated circuit: driver Topology: buck Kind of integrated circuit: LED driver Case: TSOT25 Output current: 1A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 8...30V DC Kind of package: reel; tape Integrated circuit features: linear dimming; PWM |
auf Bestellung 743 Stücke: Lieferzeit 14-21 Tag (e) |
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| AZ1117D-ADJTRE1 | DIODES INCORPORATED |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.25V Output voltage: 1.25...15V Output current: 1A Case: DPAK Mounting: SMD Manufacturer series: AZ1117 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.5...10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DDTB143EC-7-F |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 200mW; SOT23; R1: 4.7kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Collector current: 0.5A
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 4.7kΩ
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 200mW; SOT23; R1: 4.7kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Collector current: 0.5A
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 4.7kΩ
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DDTB143EU-7-F |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 200mW; SOT323; R1: 4.7kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT323
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Collector current: 0.5A
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 4.7kΩ
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 200mW; SOT323; R1: 4.7kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT323
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Collector current: 0.5A
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 4.7kΩ
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84C33-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 1004 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 1004+ | 0.072 EUR |
| BZX84C33Q-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84C33-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84C33T-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 33V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT523
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 33V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT523
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84C33Q-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 350mW; 33V; SMD; SOT23
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6.1%
Case: SOT23
Category: SMD Zener diodes
Description: Diode: Zener; 350mW; 33V; SMD; SOT23
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6.1%
Case: SOT23
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.037 EUR |
| AP2303MPTR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; PSOP8
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output voltage: 0.6...3.3V
Output current: 1.75A
Operating voltage: 1.2...5.5/3...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: PSOP8
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; PSOP8
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output voltage: 0.6...3.3V
Output current: 1.75A
Operating voltage: 1.2...5.5/3...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: PSOP8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AP2303MTR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; SO8
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output voltage: 0.6...3.3V
Output current: 1.75A
Operating voltage: 1.2...5.5/3...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: SO8
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; SO8
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output voltage: 0.6...3.3V
Output current: 1.75A
Operating voltage: 1.2...5.5/3...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: SO8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJD340-13 |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK,TO252
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.5A
Pulsed collector current: 0.75A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Quantity in set/package: 2500pcs.
Frequency: 10MHz
Case: DPAK; TO252
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK,TO252
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.5A
Pulsed collector current: 0.75A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Quantity in set/package: 2500pcs.
Frequency: 10MHz
Case: DPAK; TO252
Polarisation: bipolar
auf Bestellung 2480 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 79+ | 0.92 EUR |
| 115+ | 0.62 EUR |
| 186+ | 0.38 EUR |
| 500+ | 0.28 EUR |
| 1000+ | 0.24 EUR |
| DMP2078LCA3-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: X4-DSN1006-3
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -13A
Drain current: -2.7A
Gate charge: 1.6nC
On-state resistance: 0.6Ω
Power dissipation: 1.4W
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: X4-DSN1006-3
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -13A
Drain current: -2.7A
Gate charge: 1.6nC
On-state resistance: 0.6Ω
Power dissipation: 1.4W
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ40CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 557 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 500+ | 0.14 EUR |
| 557+ | 0.13 EUR |
| SMAJ40CAQ-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAV116WS-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAV116WSQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LVC86AT14-13 |
|
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
auf Bestellung 2222 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 222+ | 0.32 EUR |
| 350+ | 0.2 EUR |
| 414+ | 0.17 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.13 EUR |
| S1M-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
auf Bestellung 13713 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 582+ | 0.12 EUR |
| 958+ | 0.075 EUR |
| 1359+ | 0.053 EUR |
| 1573+ | 0.045 EUR |
| 2500+ | 0.038 EUR |
| 5000+ | 0.032 EUR |
| 10000+ | 0.028 EUR |
| BZX84C2V7Q-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84C2V7T-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 2.7V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7%
Case: SOT523
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 2.7V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7%
Case: SOT523
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84C2V7TS-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: triple independent
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: triple independent
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84C2V7W-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT323
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT323
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ60CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ60CAQ-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ5.0A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ5.0AQ-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 3.0SMCJ5.0A-13 |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.07V; 326.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 326.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.07V; 326.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 326.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PDS835L-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Max. forward impulse current: 120A
Kind of package: reel; tape
Leakage current: 35mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Max. forward impulse current: 120A
Kind of package: reel; tape
Leakage current: 35mA
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| PDS835L-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Max. forward impulse current: 120A
Kind of package: reel; tape
Leakage current: 35mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Max. forward impulse current: 120A
Kind of package: reel; tape
Leakage current: 35mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMAZ6V8-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.8V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.8V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 62+ | 1.16 EUR |
| DMTH10H4M6SPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Power dissipation: 2.7W
Case: PowerDI5060-8
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 66nC
Pulsed drain current: 400A
Kind of channel: enhancement
Drain current: 14A
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Power dissipation: 2.7W
Case: PowerDI5060-8
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 66nC
Pulsed drain current: 400A
Kind of channel: enhancement
Drain current: 14A
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMTH10H4M6SPSWQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.7W; PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Power dissipation: 4.7W
Case: PowerDI5060-8
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 66nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.7W; PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Power dissipation: 4.7W
Case: PowerDI5060-8
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 66nC
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMTH6006SPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12.6A; Idm: 400A; 2.94W
Kind of channel: enhancement
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 400A
Drain current: 12.6A
Drain-source voltage: 60V
Gate charge: 27.9nC
On-state resistance: 6.2mΩ
Power dissipation: 2.94W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12.6A; Idm: 400A; 2.94W
Kind of channel: enhancement
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 400A
Drain current: 12.6A
Drain-source voltage: 60V
Gate charge: 27.9nC
On-state resistance: 6.2mΩ
Power dissipation: 2.94W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMP4006SPSWQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -92A; Idm: -460A; 3.4W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -460A
Drain current: -92A
Drain-source voltage: -40V
Gate charge: 162nC
On-state resistance: 7.9mΩ
Power dissipation: 3.4W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -92A; Idm: -460A; 3.4W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -460A
Drain current: -92A
Drain-source voltage: -40V
Gate charge: 162nC
On-state resistance: 7.9mΩ
Power dissipation: 3.4W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS70W-04-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 0.1A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 0.1A
auf Bestellung 1880 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 329+ | 0.22 EUR |
| 391+ | 0.18 EUR |
| 707+ | 0.1 EUR |
| 898+ | 0.08 EUR |
| 1011+ | 0.071 EUR |
| 2N7002H-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 9092 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 295+ | 0.24 EUR |
| 472+ | 0.15 EUR |
| 550+ | 0.13 EUR |
| 872+ | 0.082 EUR |
| 1166+ | 0.061 EUR |
| 1309+ | 0.055 EUR |
| 3000+ | 0.046 EUR |
| 2N7002A-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.14A; Idm: 0.8A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.14A; Idm: 0.8A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Version: ESD
auf Bestellung 1485 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 544+ | 0.13 EUR |
| 779+ | 0.092 EUR |
| 910+ | 0.079 EUR |
| 1276+ | 0.056 EUR |
| 1462+ | 0.049 EUR |
| 2N7002AQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.37W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.37W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N7002H-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; 510mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.51W
Case: SOT23
On-state resistance: 7.5Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; 510mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.51W
Case: SOT23
On-state resistance: 7.5Ω
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N7002EQ-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 292mA; Idm: 1A; 700mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 292mA
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 292mA; Idm: 1A; 700mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 292mA
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
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| KBJ408G |
|
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 1.52 EUR |
| 85+ | 0.85 EUR |
| 88+ | 0.82 EUR |
| KBP408G |
|
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 130A
Max. off-state voltage: 0.8kV
Load current: 4A
Case: KBP
Kind of package: tube
Max. forward impulse current: 130A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Electrical mounting: THT
Version: flat
Leads: flat pin
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 130A
Max. off-state voltage: 0.8kV
Load current: 4A
Case: KBP
Kind of package: tube
Max. forward impulse current: 130A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Electrical mounting: THT
Version: flat
Leads: flat pin
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| D1213A-01T-7 |
|
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOD523; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Capacitance: 1.2pF
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOD523; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Capacitance: 1.2pF
Application: automotive industry
Kind of package: reel; tape
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| FZT600TA |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 250MHz
auf Bestellung 1850 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 120+ | 0.6 EUR |
| 175+ | 0.41 EUR |
| 250+ | 0.36 EUR |
| 500+ | 0.35 EUR |
| DMT32M5LFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 67.7nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 67.7nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 7 inch reel; tape
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| DMT32M5LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
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| DMT32M5LPSW-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2W; PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Power dissipation: 3.2W
Case: PowerDI5060-8
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 34nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2W; PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Power dissipation: 3.2W
Case: PowerDI5060-8
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 34nC
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| DMT69M5LCG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.7A
Power dissipation: 2.64W
Case: V-DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 208A
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.7A
Power dissipation: 2.64W
Case: V-DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 208A
Kind of package: 7 inch reel; tape
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| DMT69M5LFVWQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Power dissipation: 2.74W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 160A
Kind of package: 13 inch reel; tape
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Power dissipation: 2.74W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 160A
Kind of package: 13 inch reel; tape
Application: automotive industry
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| DMT69M5LH3 |
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 300A; 3.3W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 3.3W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 300A
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 300A; 3.3W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 3.3W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 300A
Kind of package: tube
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| DMTH45M5LPSWQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 86A; Idm: 344A; 72W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 86A
Power dissipation: 72W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of channel: enhancement
Pulsed drain current: 344A
Kind of package: 13 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 86A; Idm: 344A; 72W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 86A
Power dissipation: 72W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of channel: enhancement
Pulsed drain current: 344A
Kind of package: 13 inch reel; tape
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Stück im Wert von UAH
| DMT10H4M5LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 2.3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 2.3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
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Im Einkaufswagen
Stück im Wert von UAH
| DMTH32M5LPSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±16V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±16V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Application: automotive industry
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| DMTH45M5LPDWQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of channel: enhancement
Pulsed drain current: 316A
Kind of package: 13 inch reel; tape
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of channel: enhancement
Pulsed drain current: 316A
Kind of package: 13 inch reel; tape
Application: automotive industry
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| DMTH63M5LFGQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90.3A; 3.4W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90.3A
Power dissipation: 3.4W
Case: PowerDI3333-8
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 41.2nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90.3A; 3.4W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90.3A
Power dissipation: 3.4W
Case: PowerDI3333-8
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 41.2nC
Application: automotive industry
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMTH10H4M5LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14A
Power dissipation: 2.7W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14A
Power dissipation: 2.7W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
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Stück im Wert von UAH
| MMBT6427-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
auf Bestellung 2399 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 1000+ | 0.072 EUR |
| 1229+ | 0.058 EUR |
| 1534+ | 0.047 EUR |
| 1690+ | 0.042 EUR |
| DMG7408SFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W
Case: PowerDI3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 17nC
On-state resistance: 33mΩ
Power dissipation: 2.1W
Drain current: 7.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 66A
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W
Case: PowerDI3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 17nC
On-state resistance: 33mΩ
Power dissipation: 2.1W
Drain current: 7.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 66A
Polarisation: unipolar
Kind of package: 7 inch reel; tape
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| ZXTP07040DFFTA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 1.5W; SOT23F
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT23F
Mounting: SMD
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 1.5W; SOT23F
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT23F
Mounting: SMD
Frequency: 200MHz
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| AP8803WTG-7 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; buck; LED driver; TSOT25; 1A; Ch: 1; PWM,linear dimming
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: LED driver
Case: TSOT25
Output current: 1A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 8...30V DC
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
Category: LED drivers
Description: IC: driver; buck; LED driver; TSOT25; 1A; Ch: 1; PWM,linear dimming
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: LED driver
Case: TSOT25
Output current: 1A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 8...30V DC
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
auf Bestellung 743 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 1.39 EUR |
| 71+ | 1.02 EUR |
| 74+ | 0.97 EUR |
| AZ1117D-ADJTRE1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.25V
Output voltage: 1.25...15V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.25V
Output voltage: 1.25...15V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
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