Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (73036) > Seite 1195 nach 1218
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| DSS4140V-7 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 1A; 600mW; SOT563 Mounting: SMD Case: SOT563 Type of transistor: NPN Power dissipation: 0.6W Collector current: 1A Pulsed collector current: 3A Collector-emitter voltage: 40V Current gain: 75...900 Quantity in set/package: 3000pcs. Frequency: 150MHz Kind of package: reel; tape Polarisation: bipolar |
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| DSS4160DS-7 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 60V; 1A; 1.7W; SOT26 Mounting: SMD Case: SOT26 Type of transistor: NPN x2 Power dissipation: 1.7W Collector current: 1A Pulsed collector current: 2A Collector-emitter voltage: 60V Current gain: 100...420 Quantity in set/package: 3000pcs. Frequency: 150...220MHz Kind of package: reel; tape Polarisation: bipolar |
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| DSS4160FDB-7 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 60V; 1A; 2.47W; U-DFN2020-6 Mounting: SMD Case: U-DFN2020-6 Type of transistor: NPN x2 Power dissipation: 2.47W Collector current: 1A Pulsed collector current: 1.5A Collector-emitter voltage: 60V Current gain: 70...430 Quantity in set/package: 3000pcs. Frequency: 90...175MHz Kind of package: reel; tape Polarisation: bipolar |
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| DSS4160T-7 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23 Mounting: SMD Case: SOT23 Type of transistor: NPN Power dissipation: 725mW Collector current: 1A Pulsed collector current: 2A Collector-emitter voltage: 60V Current gain: 100...250 Quantity in set/package: 3000pcs. Frequency: 150MHz Kind of package: reel; tape Polarisation: bipolar |
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| DSS4160TQ-7 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23 Mounting: SMD Case: SOT23 Type of transistor: NPN Power dissipation: 725mW Collector current: 1A Pulsed collector current: 2A Collector-emitter voltage: 60V Current gain: 100...250 Quantity in set/package: 3000pcs. Frequency: 150MHz Kind of package: reel; tape Application: automotive industry Polarisation: bipolar |
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| DSS4160U-7 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 400mW; SOT323 Mounting: SMD Case: SOT323 Type of transistor: NPN Power dissipation: 0.4W Collector current: 1A Pulsed collector current: 2A Collector-emitter voltage: 60V Current gain: 100...250 Quantity in set/package: 3000pcs. Frequency: 150MHz Kind of package: reel; tape Polarisation: bipolar |
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| DSS4160V-7 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 600mW; SOT563 Mounting: SMD Case: SOT563 Type of transistor: NPN Power dissipation: 0.6W Collector current: 1A Pulsed collector current: 2A Collector-emitter voltage: 60V Current gain: 100...250 Quantity in set/package: 3000pcs. Frequency: 150MHz Kind of package: reel; tape Polarisation: bipolar |
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| BC847BSQ-7-F | Diodes Incorporated |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 45V; 0.1A; 200mW; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT363 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Pulsed collector current: 0.2A Quantity in set/package: 3000pcs. Application: automotive industry |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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MB10F-13 | DIODES INCORPORATED |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 30A; MBF Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.8A Max. forward impulse current: 30A Case: MBF Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
auf Bestellung 2640 Stücke: Lieferzeit 14-21 Tag (e) |
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| MMBT4401-13-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.35W Case: SOT23 Current gain: 20...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Pulsed collector current: 1A Quantity in set/package: 10000pcs. |
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| MMBT4401T-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 150mW; SOT523 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SOT523 Current gain: 20...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Quantity in set/package: 3000pcs. |
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| SMAJ30AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Application: automotive industry Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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| SMBJ33AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; unidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
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| MMBT4403T-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.6A; 150mW; SOT523 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SOT523 Current gain: 20...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Quantity in set/package: 3000pcs. |
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| BC847AQ-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Current gain: 110...220 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry Pulsed collector current: 0.2A Quantity in set/package: 3000pcs. |
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| BC847AW-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 110...220 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz Pulsed collector current: 0.2A Quantity in set/package: 3000pcs. |
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| SMAJ18AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 13.7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Application: automotive industry Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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| MMBTA42-13-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23 Current gain: 25...40 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Quantity in set/package: 10000pcs. |
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| MMBTA42Q-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23 Current gain: 25...40 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
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| BC856B-13-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 65V; 0.1A; 350mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100...200MHz Pulsed collector current: 0.2A Quantity in set/package: 10000pcs. |
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| BC856BQ-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 65V; 0.1A; 350mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100...200MHz Application: automotive industry Pulsed collector current: 0.2A Quantity in set/package: 3000pcs. |
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| BC856BW-13-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 65V; 0.1A; 200mW; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100...200MHz Pulsed collector current: 0.2A Quantity in set/package: 10000pcs. |
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| BC856BWQ-7 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 65V; 0.1A; 200mW; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100...200MHz Pulsed collector current: 0.2A Quantity in set/package: 3000pcs. Application: automotive industry |
Produkt ist nicht verfügbar |
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| BFS17NTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 11V; 0.05A; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 11V Collector current: 50mA Power dissipation: 0.35W Case: SOT23 Current gain: 56...180 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 1.4...3.2GHz |
Produkt ist nicht verfügbar |
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| BFS17NQTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 11V; 0.05A; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 11V Collector current: 50mA Power dissipation: 0.35W Case: SOT23 Current gain: 56...180 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 1.4...3.2GHz Application: automotive industry |
Produkt ist nicht verfügbar |
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| BAV23SQ-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.4A Reverse recovery time: 50ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 9A Kind of package: reel; tape Features of semiconductor devices: small signal Application: automotive industry Max. load current: 0.625A |
Produkt ist nicht verfügbar |
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| AZ431LANTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
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| AZ431LANTR-E1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
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| AZ431LARTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
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| AZ431LAZTR-E1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
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| AZ431LBKTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
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| AZ431LBNTR-E1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
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| AZ431LBZTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.25V; ±1%; TO92; Ammo Pack; 100mA Type of integrated circuit: voltage reference source Reference voltage: 1.25V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: -40...125°C Operating voltage: 1.25...18V Kind of package: Ammo Pack Maximum output current: 0.1A |
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ZXTD718MCTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 20V; 3.5A; 2.45W; DFN3020B-8 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 3.5A Power dissipation: 2.45W Case: DFN3020B-8 Pulsed collector current: 6A Current gain: 15...475 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 150...180MHz |
auf Bestellung 2676 Stücke: Lieferzeit 14-21 Tag (e) |
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| SMBJ5.0AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 6.4÷7.23V; 65.2A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.23V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
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| DPLS350E-13 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 3A; 1W; SOT223 Kind of package: reel; tape Mounting: SMD Case: SOT223 Power dissipation: 1W Collector current: 3A Pulsed collector current: 5A Collector-emitter voltage: 50V Current gain: 100...200 Quantity in set/package: 2500pcs. Frequency: 100MHz Polarisation: bipolar Type of transistor: PNP |
Produkt ist nicht verfügbar |
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BC857BSQ-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT363 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry Pulsed collector current: 0.2A Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
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| SMBJ30CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 12.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
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| GBJ2010-F | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 240A Electrical mounting: THT Case: GBJ Features of semiconductor devices: glass passivated Kind of package: tube Type of bridge rectifier: single-phase Max. forward voltage: 1.05V Load current: 20A Max. forward impulse current: 0.24kA Max. off-state voltage: 1kV Version: flat Leads: flat pin |
Produkt ist nicht verfügbar |
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| SMAJ15AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 16.4A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| DXT2907A-13 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 0.6A; 1.2W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 1.2W Case: SOT89 Current gain: 50...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Pulsed collector current: 0.8A Quantity in set/package: 2500pcs. |
Produkt ist nicht verfügbar |
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| SMBJ36AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 40÷46V; 10.3A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...46V Max. forward impulse current: 10.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| SBR20100CT | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 150A; TO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward impulse current: 150A Kind of package: tube Max. load current: 20A Technology: SBR® |
Produkt ist nicht verfügbar |
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| SBR20100CT-G | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 150A; TO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward impulse current: 150A Kind of package: tube Max. load current: 20A Technology: SBR® |
Produkt ist nicht verfügbar |
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| SBR20100CTFP | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 150A; ITO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: ITO220AB Max. forward impulse current: 150A Kind of package: tube Max. load current: 20A Technology: SBR® |
Produkt ist nicht verfügbar |
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| SMBJ30AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
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| SMBJ24AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; unidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...30.7V Max. forward impulse current: 15.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
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FMMT558QTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.15A Power dissipation: 0.5W Case: SOT23 Current gain: 15...300 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
auf Bestellung 1393 Stücke: Lieferzeit 14-21 Tag (e) |
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| BAW56DW-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: common anode; double x2 Case: SOT363 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
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Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BAW56DWQ-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: common anode; double x2 Case: SOT363 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BAW56HDW-13 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: common anode; double x2 Case: SOT363 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BAW56HDWQ-13 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: common anode; double x2 Case: SOT363 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| RS1MDFQ-13 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 500ns; D-FLAT; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: D-FLAT Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| RS1MEWFQ-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FRS1ME-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO219AA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: DO219AA Max. forward voltage: 1.3V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FRS1MEQ-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO219AA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: DO219AA Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SMBJ18CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 20...23.3V Max. forward impulse current: 20.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Application: automotive industry Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
SMAJ24CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SMAJ24CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Application: automotive industry Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| ULN2002AS16-13 | DIODES INCORPORATED |
Category: Drivers - integrated circuitsDescription: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7 Type of integrated circuit: driver Kind of integrated circuit: darlington; transistor array Case: SO16 Output current: 0.5A Output voltage: 50V Number of channels: 7 Mounting: SMD Operating temperature: -40...105°C Application: for inductive load Input voltage: 30V Kind of package: reel; tape |
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Im Einkaufswagen Stück im Wert von UAH |
| DSS4140V-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 600mW; SOT563
Mounting: SMD
Case: SOT563
Type of transistor: NPN
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 3A
Collector-emitter voltage: 40V
Current gain: 75...900
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 600mW; SOT563
Mounting: SMD
Case: SOT563
Type of transistor: NPN
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 3A
Collector-emitter voltage: 40V
Current gain: 75...900
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSS4160DS-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 1.7W; SOT26
Mounting: SMD
Case: SOT26
Type of transistor: NPN x2
Power dissipation: 1.7W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...420
Quantity in set/package: 3000pcs.
Frequency: 150...220MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 1.7W; SOT26
Mounting: SMD
Case: SOT26
Type of transistor: NPN x2
Power dissipation: 1.7W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...420
Quantity in set/package: 3000pcs.
Frequency: 150...220MHz
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DSS4160FDB-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 2.47W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Type of transistor: NPN x2
Power dissipation: 2.47W
Collector current: 1A
Pulsed collector current: 1.5A
Collector-emitter voltage: 60V
Current gain: 70...430
Quantity in set/package: 3000pcs.
Frequency: 90...175MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 2.47W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Type of transistor: NPN x2
Power dissipation: 2.47W
Collector current: 1A
Pulsed collector current: 1.5A
Collector-emitter voltage: 60V
Current gain: 70...430
Quantity in set/package: 3000pcs.
Frequency: 90...175MHz
Kind of package: reel; tape
Polarisation: bipolar
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Stück im Wert von UAH
| DSS4160T-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Power dissipation: 725mW
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Power dissipation: 725mW
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DSS4160TQ-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Power dissipation: 725mW
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Power dissipation: 725mW
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DSS4160U-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 400mW; SOT323
Mounting: SMD
Case: SOT323
Type of transistor: NPN
Power dissipation: 0.4W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 400mW; SOT323
Mounting: SMD
Case: SOT323
Type of transistor: NPN
Power dissipation: 0.4W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSS4160V-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 600mW; SOT563
Mounting: SMD
Case: SOT563
Type of transistor: NPN
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 600mW; SOT563
Mounting: SMD
Case: SOT563
Type of transistor: NPN
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BC847BSQ-7-F |
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Hersteller: Diodes Incorporated
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 394+ | 0.18 EUR |
| 639+ | 0.11 EUR |
| 870+ | 0.082 EUR |
| 1000+ | 0.073 EUR |
| 3000+ | 0.06 EUR |
| MB10F-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 30A; MBF
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 30A; MBF
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 2640 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 180+ | 0.4 EUR |
| 315+ | 0.23 EUR |
| 391+ | 0.18 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.14 EUR |
| 2000+ | 0.13 EUR |
| MMBT4401-13-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Pulsed collector current: 1A
Quantity in set/package: 10000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Pulsed collector current: 1A
Quantity in set/package: 10000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBT4401T-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT523
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT523
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ30AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ33AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBT4403T-7-F |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT523
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT523
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC847AQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC847AW-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ18AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBTA42-13-F |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Current gain: 25...40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Quantity in set/package: 10000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Current gain: 25...40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Quantity in set/package: 10000pcs.
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| MMBTA42Q-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Current gain: 25...40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Current gain: 25...40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
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| BC856B-13-F |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
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| BC856BQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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| BC856BW-13-F |
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
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| BC856BWQ-7 |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Application: automotive industry
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| BFS17NTA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 11V; 0.05A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 11V
Collector current: 50mA
Power dissipation: 0.35W
Case: SOT23
Current gain: 56...180
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 1.4...3.2GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 11V; 0.05A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 11V
Collector current: 50mA
Power dissipation: 0.35W
Case: SOT23
Current gain: 56...180
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 1.4...3.2GHz
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| BFS17NQTA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 11V; 0.05A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 11V
Collector current: 50mA
Power dissipation: 0.35W
Case: SOT23
Current gain: 56...180
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 1.4...3.2GHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 11V; 0.05A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 11V
Collector current: 50mA
Power dissipation: 0.35W
Case: SOT23
Current gain: 56...180
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 1.4...3.2GHz
Application: automotive industry
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| BAV23SQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.625A
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.625A
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| AZ431LANTR-G1 |
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Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| AZ431LANTR-E1 |
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Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| AZ431LARTR-G1 |
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Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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| AZ431LAZTR-E1 |
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Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| AZ431LBKTR-G1 |
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Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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| AZ431LBNTR-E1 |
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Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| AZ431LBZTR-G1 |
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Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.25V; ±1%; TO92; Ammo Pack; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.25V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 1.25...18V
Kind of package: Ammo Pack
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.25V; ±1%; TO92; Ammo Pack; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.25V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 1.25...18V
Kind of package: Ammo Pack
Maximum output current: 0.1A
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| ZXTD718MCTA |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 3.5A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 3.5A
Power dissipation: 2.45W
Case: DFN3020B-8
Pulsed collector current: 6A
Current gain: 15...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...180MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 3.5A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 3.5A
Power dissipation: 2.45W
Case: DFN3020B-8
Pulsed collector current: 6A
Current gain: 15...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...180MHz
auf Bestellung 2676 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 0.93 EUR |
| 87+ | 0.82 EUR |
| 123+ | 0.58 EUR |
| 500+ | 0.45 EUR |
| SMBJ5.0AQ-13-F |
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.23V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.23V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.23V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.23V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| DPLS350E-13 |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1W; SOT223
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Power dissipation: 1W
Collector current: 3A
Pulsed collector current: 5A
Collector-emitter voltage: 50V
Current gain: 100...200
Quantity in set/package: 2500pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1W; SOT223
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Power dissipation: 1W
Collector current: 3A
Pulsed collector current: 5A
Collector-emitter voltage: 50V
Current gain: 100...200
Quantity in set/package: 2500pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
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| BC857BSQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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| SMBJ30CAQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| GBJ2010-F |
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Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 240A
Electrical mounting: THT
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 20A
Max. forward impulse current: 0.24kA
Max. off-state voltage: 1kV
Version: flat
Leads: flat pin
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 240A
Electrical mounting: THT
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 20A
Max. forward impulse current: 0.24kA
Max. off-state voltage: 1kV
Version: flat
Leads: flat pin
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| SMAJ15AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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| DXT2907A-13 |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Pulsed collector current: 0.8A
Quantity in set/package: 2500pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Pulsed collector current: 0.8A
Quantity in set/package: 2500pcs.
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| SMBJ36AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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| SBR20100CT |
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Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 150A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
Technology: SBR®
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 150A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
Technology: SBR®
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| SBR20100CT-G |
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Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 150A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
Technology: SBR®
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 150A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
Technology: SBR®
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| SBR20100CTFP |
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Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 150A; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
Technology: SBR®
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 150A; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
Technology: SBR®
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| SMBJ30AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| SMBJ24AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| FMMT558QTA |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Current gain: 15...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Current gain: 15...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
auf Bestellung 1393 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 116+ | 0.62 EUR |
| 136+ | 0.53 EUR |
| 243+ | 0.29 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.19 EUR |
| BAW56DW-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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| BAW56DWQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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| BAW56HDW-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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| BAW56HDWQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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| RS1MDFQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; D-FLAT; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: D-FLAT
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; D-FLAT; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: D-FLAT
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| RS1MEWFQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| FRS1ME-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO219AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: DO219AA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO219AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: DO219AA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| FRS1MEQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO219AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: DO219AA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO219AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: DO219AA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| SMBJ18CAQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ24CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ24CAQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| ULN2002AS16-13 |
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Hersteller: DIODES INCORPORATED
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...105°C
Application: for inductive load
Input voltage: 30V
Kind of package: reel; tape
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...105°C
Application: for inductive load
Input voltage: 30V
Kind of package: reel; tape
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