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DT2042-04SO-7 DT2042-04SO-7 DIODES INCORPORATED DT2042-04SO.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; SOT23-6; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Case: SOT23-6
Kind of package: reel; tape
Leakage current: 1µA
Capacitance: 1.5pF
Number of channels: 4
Breakdown voltage: 6V
Max. forward impulse current: 10A
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SDT20B100D1-13 SDT20B100D1-13 DIODES INCORPORATED SDT20B100D1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 20A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 0.82V
Leakage current: 16mA
Max. forward impulse current: 100A
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SDT20A100CT SDT20A100CT DIODES INCORPORATED SDT20A100CT-SDT20A100CTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward voltage: 0.67V
Leakage current: 20mA
Max. forward impulse current: 200A
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DMN2053U-7 DMN2053U-7 DIODES INCORPORATED DMN2053U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Pulsed drain current: 22A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMMT5551S-7-F DMMT5551S-7-F DIODES INCORPORATED DMMT5551.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT26
Current gain: 50...250
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
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AP7313-15SAG-7 AP7313-15SAG-7 DIODES INCORPORATED AP7313.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT23; SMD
Manufacturer series: AP7313
Operating temperature: -40...85°C
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2...6V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Output voltage: 1.5V
Kind of package: reel; tape
Case: SOT23
Number of channels: 1
Tolerance: ±2%
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ZXRE160FT4-7 DIODES INCORPORATED ZXRE160.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±1%; DFN1520-6; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: SMD
Case: DFN1520-6
Operating temperature: -40...125°C
Operating voltage: 0.6...18V
Kind of package: reel; tape
Maximum output current: 15mA
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ZXRE160AH5TA DIODES INCORPORATED ZXRE160.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±0.5%; SC70-5
Type of integrated circuit: voltage reference source
Tolerance: ±0.5%
Mounting: SMD
Case: SC70-5
Operating temperature: -40...125°C
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ZXRE160ET5TA DIODES INCORPORATED ZXRE160.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±1%; SOT25
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
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MMBZ5257B-7-F DIODES INCORPORATED MMBZ5221B-MMBZ5259B.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
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MMBZ5257BQ-7-F DIODES INCORPORATED ds18011.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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MMBZ5257BT-7-F DIODES INCORPORATED ds30267.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 33V; SMD; SOT523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT523
Kind of package: reel; tape
Semiconductor structure: single diode
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MMBZ5257BTS-7-F DIODES INCORPORATED MMBZ5221-5259BTS.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 33V; SMD; SOT363; reel,tape; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: triple independent
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DDTA123ECA-7-F DDTA123ECA-7-F DIODES INCORPORATED ds30333.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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DDTA123EE-7-F DIODES INCORPORATED ds30317.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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SMAJ75A-13-F SMAJ75A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMAJ75CA-13-F SMAJ75CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMAJ75ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMAJ75ADFQ-13 DIODES INCORPORATED P6SMAJ5.0ADFQ_P6SMAJ85ADFQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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DMN1054UCB4-7 DIODES INCORPORATED DMN1054UCB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 8V; 3.2A; Idm: 8A; 1.34W
Mounting: SMD
Case: X1-WLB0808-4
Power dissipation: 1.34W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 3.2A
Kind of channel: enhancement
Drain-source voltage: 8V
Type of transistor: N-MOSFET
Gate-source voltage: ±5V
Kind of package: 7 inch reel; tape
On-state resistance: 0.11Ω
Pulsed drain current: 8A
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T5V0DLP-7B DIODES INCORPORATED ds31906.pdf Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Mounting: SMD
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DF005S-T DF005S-T DIODES INCORPORATED DF005_10S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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74LVC2G06FX4-7 DIODES INCORPORATED 74LVC2G06.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1409-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Family: LVC
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74LVC2G06FZ4-7 DIODES INCORPORATED 74LVC2G06.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Family: LVC
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74LVC2G06W6-7 74LVC2G06W6-7 DIODES INCORPORATED 74LVC2G06.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT26; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SOT26
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Family: LVC
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D3V3XA4B10LP-7 DIODES INCORPORATED D3V3XA4B10LP.pdf Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Mounting: SMD
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D3V3XA4B10LP-7 DIODES INCORPORATED D3V3XA4B10LP.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 0.024kW; bidirectional; ESD; U-DFN2510-10
Type of diode: TVS array
Breakdown voltage: 5V
Peak pulse power dissipation: 24W
Semiconductor structure: bidirectional
Version: ESD
Mounting: SMD
Case: U-DFN2510-10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Application: USB
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BAW156TQ-7-F BAW156TQ-7-F DIODES INCORPORATED BAW156TQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common anode; double
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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KBJ601G KBJ601G DIODES INCORPORATED KBJ6005G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 170A
Max. forward impulse current: 170A
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 0.1kV
Electrical mounting: THT
Load current: 6A
Kind of package: tube
Case: KBJ
Type of bridge rectifier: single-phase
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DMN601WK-7 DMN601WK-7 DIODES INCORPORATED DMN601WK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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DMN601WKQ-13 DMN601WKQ-13 DIODES INCORPORATED DMN601WKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMN601WKQ-7 DMN601WKQ-7 DIODES INCORPORATED DMN601WKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DDZ12ASF-7 DDZ12ASF-7 DIODES INCORPORATED ds31987.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
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BC847PN-7R-F BC847PN-7R-F DIODES INCORPORATED BC847PN.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
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BC847PNQ-7-F BC847PNQ-7-F DIODES INCORPORATED BC847PNQ.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
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BC847PNQ-7R-F BC847PNQ-7R-F DIODES INCORPORATED BC847PNQ.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
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TB1100H-13-F DIODES INCORPORATED ds30360.pdf Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 90V; SMB; SMD; 100A; bidirectional; UBO: 130V
Semiconductor structure: bidirectional
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Type of thyristor: TSS
Max. off-state voltage: 90V
Max. forward impulse current: 100A
Breakover voltage: 130V
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ZVN2120GTA ZVN2120GTA DIODES INCORPORATED ZVN2120G.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.32A; Idm: 2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.32A
Pulsed drain current: 2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PD3S120L-7 DIODES INCORPORATED ds30793.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Case: PowerDI®323
Mounting: SMD
Semiconductor structure: single diode
Capacitance: 49pF
Leakage current: 30mA
Max. forward voltage: 0.42V
Load current: 1A
Max. forward impulse current: 33A
Max. off-state voltage: 20V
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74HCT126T14-13 74HCT126T14-13 DIODES INCORPORATED 74HCT126.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 4; CMOS,TTL; SMD; TSSOP14; -40÷150°C; HCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -40...150°C
Kind of input: with Schmitt trigger
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AP2210N-5.0TRG1 AP2210N-5.0TRG1 DIODES INCORPORATED AP2210.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT23; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...13V
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AP2210N-4.0TRG1 DIODES INCORPORATED AP2210.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 4V; 0.3A; SOT23; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 4V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...13V
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AP2210N-3.0TRG1 AP2210N-3.0TRG1 DIODES INCORPORATED AP2210.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT23; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
Manufacturer series: AP2210
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AP2210N-2.5TRE1 AP2210N-2.5TRE1 DIODES INCORPORATED AP2210.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 2.5V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
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AP2210N-3.0TRE1 AP2210N-3.0TRE1 DIODES INCORPORATED AP2210.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT23; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
Produkt ist nicht verfügbar
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BZT585B20T-7 BZT585B20T-7 DIODES INCORPORATED BZT585BxVxT.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 20V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±2%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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SMF4L24A-7 DIODES INCORPORATED SMF4Lxx.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; DO219AA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: DO219AA
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AP2213D-3.3TRE1 DIODES INCORPORATED AP2213.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; TO252; SMD
Mounting: SMD
Tolerance: ±1%
Operating temperature: -40...125°C
Output current: 0.5A
Voltage drop: 0.7V
Number of channels: 1
Output voltage: 3.3V
Input voltage: 2.5...18V
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP2213
Kind of package: reel; tape
Case: TO252
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
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AP2213H-3.3TRG1 AP2213H-3.3TRG1 DIODES INCORPORATED AP2213.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Operating temperature: -40...125°C
Output current: 0.5A
Voltage drop: 0.7V
Output voltage: 3.3V
Number of channels: 1
Tolerance: ±1%
Input voltage: 2.5...18V
Manufacturer series: AP2213
Produkt ist nicht verfügbar
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DGD2190MS8-13 DIODES INCORPORATED DGD2190M.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -4.5÷4.5A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4.5...4.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 50ns
Pulse fall time: 45ns
Supply voltage: 10...20V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
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DGD2103MS8-13 DGD2103MS8-13 DIODES INCORPORATED DGD2103M.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Topology: IGBT half-bridge; MOSFET half-bridge
Supply voltage: 10...20V
Produkt ist nicht verfügbar
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DGD2304S8-13 DGD2304S8-13 DIODES INCORPORATED DGD2304.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Topology: IGBT half-bridge; MOSFET half-bridge
Supply voltage: 10...20V
Produkt ist nicht verfügbar
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DDZ9688-7 DDZ9688-7 DIODES INCORPORATED DDZ9689-7.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD123; reel,tape; single diode
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Tolerance: ±5%
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DMN2044UCB4-7 DIODES INCORPORATED DMN2044UCB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 16A; 1.18W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 16A
Power dissipation: 1.18W
Case: U-WLB1010-4
Gate-source voltage: ±8V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2995 Stücke:
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APR3415MTR-G1 DIODES INCORPORATED APR3415.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; SO8; flyback; 3.3÷6V
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Topology: flyback
Supply voltage: 3.3...6V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DMN2005LP4K-7B DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
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DMN2005LP4K-7 DIODES INCORPORATED ds30799.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 350mA; 400mW; X2-DFN1006-3
Power dissipation: 0.4W
Mounting: SMD
Case: X2-DFN1006-3
Kind of package: 7 inch reel; tape
Drain current: 0.35A
On-state resistance: 3.5Ω
Gate-source voltage: ±10V
Drain-source voltage: 20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BAS70DW-04Q-7-F BAS70DW-04Q-7-F DIODES INCORPORATED BAS70TWQ_BAS70DW-04Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double x2
Capacitance: 2pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
Produkt ist nicht verfügbar
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ZHCS350TA ZHCS350TA DIODES INCORPORATED ZHCS350.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.35A; 1.6ns; 330mW
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.35A
Semiconductor structure: single diode
Capacitance: 3.3pF
Max. forward voltage: 0.405V
Max. forward impulse current: 0.91A
Reverse recovery time: 1.6ns
Kind of package: reel; tape
Power dissipation: 0.33W
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239+0.36 EUR
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305+0.27 EUR
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1500+0.24 EUR
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MMBTA14-7-F MMBTA14-7-F DIODES INCORPORATED MMBTA13-7-F.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Manufacturer standard package: 3000pcs.
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DT2042-04SO-7 DT2042-04SO.pdf
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; SOT23-6; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Case: SOT23-6
Kind of package: reel; tape
Leakage current: 1µA
Capacitance: 1.5pF
Number of channels: 4
Breakdown voltage: 6V
Max. forward impulse current: 10A
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SDT20B100D1-13 SDT20B100D1.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 20A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 0.82V
Leakage current: 16mA
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
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SDT20A100CT SDT20A100CT-SDT20A100CTFP.pdf
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward voltage: 0.67V
Leakage current: 20mA
Max. forward impulse current: 200A
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DMN2053U-7 DMN2053U.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Pulsed drain current: 22A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMMT5551S-7-F DMMT5551.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT26
Current gain: 50...250
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
Produkt ist nicht verfügbar
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AP7313-15SAG-7 AP7313.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT23; SMD
Manufacturer series: AP7313
Operating temperature: -40...85°C
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2...6V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Output voltage: 1.5V
Kind of package: reel; tape
Case: SOT23
Number of channels: 1
Tolerance: ±2%
Produkt ist nicht verfügbar
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ZXRE160FT4-7 ZXRE160.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±1%; DFN1520-6; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: SMD
Case: DFN1520-6
Operating temperature: -40...125°C
Operating voltage: 0.6...18V
Kind of package: reel; tape
Maximum output current: 15mA
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ZXRE160AH5TA ZXRE160.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±0.5%; SC70-5
Type of integrated circuit: voltage reference source
Tolerance: ±0.5%
Mounting: SMD
Case: SC70-5
Operating temperature: -40...125°C
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AnzahlPrivatkunde
3000+0.51 EUR
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ZXRE160ET5TA ZXRE160.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±1%; SOT25
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
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3000+0.45 EUR
Mindestbestellmenge: 3000 Stücke
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MMBZ5257B-7-F MMBZ5221B-MMBZ5259B.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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MMBZ5257BQ-7-F ds18011.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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MMBZ5257BT-7-F ds30267.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 33V; SMD; SOT523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT523
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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MMBZ5257BTS-7-F MMBZ5221-5259BTS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 33V; SMD; SOT363; reel,tape; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: triple independent
Produkt ist nicht verfügbar
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DDTA123ECA-7-F ds30333.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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DDTA123EE-7-F ds30317.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Produkt ist nicht verfügbar
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SMAJ75A-13-F SMAJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 5009 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
295+0.29 EUR
391+0.21 EUR
451+0.19 EUR
681+0.13 EUR
834+0.1 EUR
1000+0.098 EUR
2000+0.094 EUR
5000+0.09 EUR
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SMAJ75CA-13-F SMAJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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P6SMAJ75ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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P6SMAJ75ADFQ-13 P6SMAJ5.0ADFQ_P6SMAJ85ADFQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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DMN1054UCB4-7 DMN1054UCB4.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 8V; 3.2A; Idm: 8A; 1.34W
Mounting: SMD
Case: X1-WLB0808-4
Power dissipation: 1.34W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 3.2A
Kind of channel: enhancement
Drain-source voltage: 8V
Type of transistor: N-MOSFET
Gate-source voltage: ±5V
Kind of package: 7 inch reel; tape
On-state resistance: 0.11Ω
Pulsed drain current: 8A
Produkt ist nicht verfügbar
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T5V0DLP-7B ds31906.pdf
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Mounting: SMD
Produkt ist nicht verfügbar
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DF005S-T DF005_10S.pdf
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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74LVC2G06FX4-7 74LVC2G06.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1409-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Family: LVC
Produkt ist nicht verfügbar
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74LVC2G06FZ4-7 74LVC2G06.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Family: LVC
Produkt ist nicht verfügbar
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74LVC2G06W6-7 74LVC2G06.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT26; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SOT26
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Family: LVC
Produkt ist nicht verfügbar
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D3V3XA4B10LP-7 D3V3XA4B10LP.pdf
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Mounting: SMD
Produkt ist nicht verfügbar
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D3V3XA4B10LP-7 D3V3XA4B10LP.pdf
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 0.024kW; bidirectional; ESD; U-DFN2510-10
Type of diode: TVS array
Breakdown voltage: 5V
Peak pulse power dissipation: 24W
Semiconductor structure: bidirectional
Version: ESD
Mounting: SMD
Case: U-DFN2510-10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Application: USB
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
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BAW156TQ-7-F BAW156TQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common anode; double
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
139+0.61 EUR
211+0.4 EUR
421+0.2 EUR
803+0.11 EUR
1000+0.092 EUR
Mindestbestellmenge: 139 Stücke
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KBJ601G KBJ6005G_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 170A
Max. forward impulse current: 170A
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 0.1kV
Electrical mounting: THT
Load current: 6A
Kind of package: tube
Case: KBJ
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
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DMN601WK-7 DMN601WK.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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DMN601WKQ-13 DMN601WKQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMN601WKQ-7 DMN601WKQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DDZ12ASF-7 ds31987.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BC847PN-7R-F BC847PN.pdf
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Produkt ist nicht verfügbar
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BC847PNQ-7-F BC847PNQ.pdf
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
Produkt ist nicht verfügbar
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BC847PNQ-7R-F BC847PNQ.pdf
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
Produkt ist nicht verfügbar
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TB1100H-13-F ds30360.pdf
Hersteller: DIODES INCORPORATED
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 90V; SMB; SMD; 100A; bidirectional; UBO: 130V
Semiconductor structure: bidirectional
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Type of thyristor: TSS
Max. off-state voltage: 90V
Max. forward impulse current: 100A
Breakover voltage: 130V
Produkt ist nicht verfügbar
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ZVN2120GTA ZVN2120G.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.32A; Idm: 2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.32A
Pulsed drain current: 2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PD3S120L-7 ds30793.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Case: PowerDI®323
Mounting: SMD
Semiconductor structure: single diode
Capacitance: 49pF
Leakage current: 30mA
Max. forward voltage: 0.42V
Load current: 1A
Max. forward impulse current: 33A
Max. off-state voltage: 20V
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
105+0.82 EUR
132+0.64 EUR
151+0.56 EUR
236+0.36 EUR
500+0.27 EUR
1000+0.25 EUR
Mindestbestellmenge: 105 Stücke
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74HCT126T14-13 74HCT126.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 4; CMOS,TTL; SMD; TSSOP14; -40÷150°C; HCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -40...150°C
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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AP2210N-5.0TRG1 AP2210.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT23; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...13V
auf Bestellung 1171 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
295+0.29 EUR
368+0.23 EUR
417+0.2 EUR
491+0.18 EUR
544+0.15 EUR
596+0.14 EUR
658+0.13 EUR
695+0.12 EUR
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AP2210N-4.0TRG1 AP2210.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 4V; 0.3A; SOT23; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 4V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...13V
auf Bestellung 1615 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
334+0.25 EUR
410+0.2 EUR
472+0.18 EUR
562+0.15 EUR
695+0.12 EUR
758+0.11 EUR
807+0.11 EUR
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AP2210N-3.0TRG1 AP2210.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT23; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
Manufacturer series: AP2210
auf Bestellung 317 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
317+0.27 EUR
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AP2210N-2.5TRE1 AP2210.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 2.5V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
Produkt ist nicht verfügbar
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AP2210N-3.0TRE1 AP2210.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT23; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BZT585B20T-7 BZT585BxVxT.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 20V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±2%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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SMF4L24A-7 SMF4Lxx.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; DO219AA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: DO219AA
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AP2213D-3.3TRE1 AP2213.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; TO252; SMD
Mounting: SMD
Tolerance: ±1%
Operating temperature: -40...125°C
Output current: 0.5A
Voltage drop: 0.7V
Number of channels: 1
Output voltage: 3.3V
Input voltage: 2.5...18V
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP2213
Kind of package: reel; tape
Case: TO252
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
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AP2213H-3.3TRG1 AP2213.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Operating temperature: -40...125°C
Output current: 0.5A
Voltage drop: 0.7V
Output voltage: 3.3V
Number of channels: 1
Tolerance: ±1%
Input voltage: 2.5...18V
Manufacturer series: AP2213
Produkt ist nicht verfügbar
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DGD2190MS8-13 DGD2190M.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -4.5÷4.5A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4.5...4.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 50ns
Pulse fall time: 45ns
Supply voltage: 10...20V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DGD2103MS8-13 DGD2103M.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Topology: IGBT half-bridge; MOSFET half-bridge
Supply voltage: 10...20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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DGD2304S8-13 DGD2304.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Topology: IGBT half-bridge; MOSFET half-bridge
Supply voltage: 10...20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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DDZ9688-7 DDZ9689-7.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD123; reel,tape; single diode
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Tolerance: ±5%
auf Bestellung 202 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
202+0.43 EUR
Mindestbestellmenge: 202 Stücke
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DMN2044UCB4-7 DMN2044UCB4.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 16A; 1.18W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 16A
Power dissipation: 1.18W
Case: U-WLB1010-4
Gate-source voltage: ±8V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
81+1.06 EUR
130+0.65 EUR
201+0.43 EUR
500+0.32 EUR
1000+0.3 EUR
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APR3415MTR-G1 APR3415.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; SO8; flyback; 3.3÷6V
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Topology: flyback
Supply voltage: 3.3...6V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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DMN2005LP4K-7B
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
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DMN2005LP4K-7 ds30799.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 350mA; 400mW; X2-DFN1006-3
Power dissipation: 0.4W
Mounting: SMD
Case: X2-DFN1006-3
Kind of package: 7 inch reel; tape
Drain current: 0.35A
On-state resistance: 3.5Ω
Gate-source voltage: ±10V
Drain-source voltage: 20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BAS70DW-04Q-7-F BAS70TWQ_BAS70DW-04Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double x2
Capacitance: 2pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
Produkt ist nicht verfügbar
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ZHCS350TA ZHCS350.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.35A; 1.6ns; 330mW
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.35A
Semiconductor structure: single diode
Capacitance: 3.3pF
Max. forward voltage: 0.405V
Max. forward impulse current: 0.91A
Reverse recovery time: 1.6ns
Kind of package: reel; tape
Power dissipation: 0.33W
auf Bestellung 1999 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
239+0.36 EUR
258+0.33 EUR
275+0.31 EUR
305+0.27 EUR
500+0.25 EUR
1500+0.24 EUR
Mindestbestellmenge: 239 Stücke
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MMBTA14-7-F MMBTA13-7-F.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Manufacturer standard package: 3000pcs.
Produkt ist nicht verfügbar
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