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B190-13-F B190-13-F DIODES INCORPORATED b170-1100b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: SMA
Kind of package: reel; tape
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 90V
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358+0.24 EUR
486+0.18 EUR
589+0.14 EUR
684+0.12 EUR
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B190B-13-F DIODES INCORPORATED B170B_B1100B.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: SMB
Leakage current: 5mA
Kind of package: reel; tape
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 90V
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B190Q-13-F B190Q-13-F DIODES INCORPORATED B170Q-B1100Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: SMA
Application: automotive industry
Leakage current: 5mA
Kind of package: reel; tape
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 90V
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B190BQ-13-F DIODES INCORPORATED B170BQ-B180BQ-B190BQ-B1100BQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: SMB
Application: automotive industry
Leakage current: 5mA
Kind of package: reel; tape
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 90V
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SB190-T DIODES INCORPORATED ds30116.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 90V; 1A; DO41; Ufmax: 0.8V; reel
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: DO41
Kind of package: reel
Max. forward voltage: 0.8V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 90V
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BZX84C11-7-F BZX84C11-7-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 11V; SMD; SOT23; reel,tape; single diode
Kind of package: reel; tape
Case: SOT23
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±5.5%
Zener voltage: 11V
Semiconductor structure: single diode
Mounting: SMD
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BZX84C11T-7-F BZX84C11T-7-F DIODES INCORPORATED BZX84CxxT_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 11V; SMD; SOT523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Case: SOT523
Kind of package: reel; tape
Semiconductor structure: single diode
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DMMT3904W-13-F DMMT3904W-13-F DIODES INCORPORATED DMMT3904W.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Current gain: 30...300
Quantity in set/package: 10000pcs.
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DMMT3904WQ-7-F DMMT3904WQ-7-F DIODES INCORPORATED DMMT3904WQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Current gain: 30...300
Quantity in set/package: 3000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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DMC2700UDM-7 DMC2700UDM-7 DIODES INCORPORATED DMC2700UDM-7.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1.14/-1.34A
Power dissipation: 1.12W
Case: SOT26
Gate-source voltage: ±6V
On-state resistance: 0.4/0.7Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
auf Bestellung 3146 Stücke:
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360+0.24 EUR
503+0.17 EUR
589+0.14 EUR
807+0.11 EUR
1000+0.1 EUR
3000+0.094 EUR
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DMC4029SK4-13 DMC4029SK4-13 DIODES INCORPORATED DMC4029SK4.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Mounting: SMD
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: 6.7/-4.9A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: TO252-4
On-state resistance: 0.032/0.055Ω
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DMC2038LVT-7 DMC2038LVT-7 DIODES INCORPORATED DMC2038LVT-7.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.1/-4.5A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.035/0.074Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMC3025LSD-13 DMC3025LSD-13 DIODES INCORPORATED DMC3025LSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.5/-8.5A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.02/0.045Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
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DMC3400SDW-7 DMC3400SDW-7 DIODES INCORPORATED DMC3400SDW-7.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 0.5/-0.36A
Power dissipation: 0.39W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.4/0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
auf Bestellung 929 Stücke:
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278+0.31 EUR
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414+0.2 EUR
653+0.13 EUR
929+0.092 EUR
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SMBJ45A-13-F SMBJ45A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 50÷57.5V; 8.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...57.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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BZT52C2V4S-7-F BZT52C2V4S-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.4V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
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DMP6350S-7 DMP6350S-7 DIODES INCORPORATED DMP6350S.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.2A; Idm: -6A; 0.72W; SOT23
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Drain-source voltage: -60V
Pulsed drain current: -6A
Drain current: -1.2A
On-state resistance: 0.35Ω
Power dissipation: 0.72W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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145+0.58 EUR
209+0.4 EUR
244+0.35 EUR
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AP130-15RG-7 AP130-15RG-7 DIODES INCORPORATED AP130.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; SC59R; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 1.5V
Output current: 0.3A
Case: SC59R
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.7...5.5V
Kind of package: reel; tape
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309+0.27 EUR
353+0.24 EUR
500+0.23 EUR
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AP7313-33SRG-7 AP7313-33SRG-7 DIODES INCORPORATED AP7313.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23R; SMD
Manufacturer series: AP7313
Operating temperature: -40...85°C
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2...6V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Output voltage: 3.3V
Kind of package: reel; tape
Case: SOT23R
Number of channels: 1
Tolerance: ±2%
auf Bestellung 1183 Stücke:
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321+0.26 EUR
363+0.24 EUR
428+0.2 EUR
521+0.17 EUR
569+0.15 EUR
596+0.14 EUR
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AL3353S-13 DIODES INCORPORATED AL3353.pdf Category: LED drivers
Description: IC: driver; boost; LED driver; SO8; Ch: 1; 9÷40VDC
Topology: boost
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver
Kind of package: reel; tape
Case: SO8
Operating temperature: -40...105°C
Number of channels: 1
Operating voltage: 9...40V DC
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AP7313-25SAG-7 AP7313-25SAG-7 DIODES INCORPORATED AP7313.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23; SMD
Manufacturer series: AP7313
Operating temperature: -40...85°C
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2...6V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Output voltage: 2.5V
Kind of package: reel; tape
Case: SOT23
Number of channels: 1
Tolerance: ±2%
auf Bestellung 2674 Stücke:
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264+0.32 EUR
325+0.26 EUR
368+0.23 EUR
432+0.2 EUR
527+0.17 EUR
575+0.14 EUR
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AP7313-33SAG-7 AP7313-33SAG-7 DIODES INCORPORATED AP7313.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23; SMD
Manufacturer series: AP7313
Operating temperature: -40...85°C
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2...6V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Output voltage: 3.3V
Kind of package: reel; tape
Case: SOT23
Number of channels: 1
Tolerance: ±2%
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DMN6075S-7 DMN6075S-7 DIODES INCORPORATED DMN6075S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2863 Stücke:
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228+0.37 EUR
304+0.29 EUR
439+0.19 EUR
516+0.17 EUR
736+0.12 EUR
1000+0.11 EUR
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ZXMN6A07FTA ZXMN6A07FTA DIODES INCORPORATED ZXMN6A07F.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 6.9A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.1A
Pulsed drain current: 6.9A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 1.65nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 6978 Stücke:
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82+1.04 EUR
123+0.69 EUR
184+0.46 EUR
217+0.39 EUR
500+0.29 EUR
1000+0.26 EUR
3000+0.23 EUR
6000+0.21 EUR
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DMN62D0U-7 DMN62D0U-7 DIODES INCORPORATED DMN62D0U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.38W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.38W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 7710 Stücke:
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358+0.24 EUR
439+0.19 EUR
500+0.17 EUR
743+0.11 EUR
985+0.087 EUR
1217+0.07 EUR
3000+0.049 EUR
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SMCJ26A-13-F SMCJ26A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 35.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 35.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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87+0.99 EUR
105+0.82 EUR
118+0.73 EUR
186+0.45 EUR
500+0.33 EUR
1000+0.3 EUR
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SMBJ22A-13-F SMBJ22A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMBJ22AQ-13-F SMBJ22AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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SMAJ20CA-13-F SMAJ20CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Max. off-state voltage: 20V
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.4kW
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
auf Bestellung 366 Stücke:
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228+0.37 EUR
285+0.3 EUR
321+0.26 EUR
366+0.24 EUR
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SMAJ20CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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AP5100WG-7 AP5100WG-7 DIODES INCORPORATED AP5100-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷24VDC; Uout: 0.81÷15VDC; 1.2A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...24V DC
Output voltage: 0.81...15V DC
Output current: 1.2A
Case: SOT26
Mounting: SMD
Frequency: 1.4MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 90%
auf Bestellung 35 Stücke:
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35+2.43 EUR
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SMAJ15A-13-F SMAJ15A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 5027 Stücke:
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432+0.2 EUR
562+0.15 EUR
618+0.14 EUR
685+0.12 EUR
736+0.12 EUR
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SMAJ14A-13-F SMAJ14A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMBJ13CA-13-F SMBJ13CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷16.5V; 27.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 27.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMAJ13CA-13-F SMAJ13CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DMG9933USD-13 DMG9933USD-13 DIODES INCORPORATED DMG9933USD.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -20A
Drain current: -3A
Gate charge: 6.5nC
On-state resistance: 0.11Ω
Power dissipation: 1.15W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
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144+0.6 EUR
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500+0.25 EUR
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DMP3056LSD-13 DMP3056LSD-13 DIODES INCORPORATED DMP3056LSD.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.1A; 2.5W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.1A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 967 Stücke:
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159+0.54 EUR
500+0.42 EUR
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DMP3085LSD-13 DMP3085LSD-13 DIODES INCORPORATED DMP3085LSD.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Pulsed drain current: -20A
Drain-source voltage: -30V
Drain current: -3.1A
On-state resistance: 70mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 208 Stücke:
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DMC4040SSD-13 DMC4040SSD-13 DIODES INCORPORATED DMC4040SSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 7.3/-7.5A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.04/0.045Ω
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DMHC3025LSD-13 DMHC3025LSD-13 DIODES INCORPORATED DMHC3025LSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; complementary pair; 30/-30V; 1.5W
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.5W
Gate charge: 11.7/11.4nC
Polarisation: unipolar
Drain current: 6/-4.2A
Kind of channel: enhancement
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 25/50mΩ
Produkt ist nicht verfügbar
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DMN6040SSD-13 DMN6040SSD-13 DIODES INCORPORATED DMN6040SSD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
On-state resistance: 55mΩ
Power dissipation: 0.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 324 Stücke:
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173+0.49 EUR
232+0.37 EUR
248+0.35 EUR
260+0.33 EUR
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DMG4800LSD-13 DMG4800LSD-13 DIODES INCORPORATED DMG4800LSD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Mounting: SMD
Power dissipation: 1.5W
Polarisation: unipolar
Drain current: 8.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 22mΩ
auf Bestellung 443 Stücke:
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DMP2040USD-13 DMP2040USD-13 DIODES INCORPORATED DMP2040USD.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -30A; 1.6W; SO8
Mounting: SMD
Case: SO8
Pulsed drain current: -30A
Power dissipation: 1.6W
Gate charge: 19nC
Polarisation: unipolar
Drain current: -5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
On-state resistance: 52mΩ
auf Bestellung 2230 Stücke:
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204+0.42 EUR
500+0.31 EUR
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DMP6050SSD-13 DMP6050SSD-13 DIODES INCORPORATED DMP6050SSD.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8
Mounting: SMD
Pulsed drain current: -32A
Power dissipation: 1.2W
Polarisation: unipolar
Drain current: -3.9A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET x2
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 55mΩ
auf Bestellung 34 Stücke:
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34+2.5 EUR
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DMC4050SSD-13 DMC4050SSD-13 DIODES INCORPORATED DMC4050SSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 5.8/-5.5A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 45/45mΩ
Produkt ist nicht verfügbar
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BZX84B27-7-F DIODES INCORPORATED BZX84Bxx(x).pdf BZX84Bxxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 27V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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FMMT549TA DIODES INCORPORATED FMMT549.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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FMMT549ATA DIODES INCORPORATED FMMT549.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...500
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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DMNH4015SSD-13 DMNH4015SSD-13 DIODES INCORPORATED DMNH4015SSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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DMNH4015SSDQ-13 DMNH4015SSDQ-13 DIODES INCORPORATED DMNH4015SSDQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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BZX84C3V9TS-7-F BZX84C3V9TS-7-F DIODES INCORPORATED BZX84CxxTS_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZX84C3V9W-7-F BZX84C3V9W-7-F DIODES INCORPORATED BZX84CxxW_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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74LVC2G17DW-7 74LVC2G17DW-7 DIODES INCORPORATED 74LVC2G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; SOT363; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of package: reel; tape
Case: SOT363
Family: LVC
Number of channels: 2
Produkt ist nicht verfügbar
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74LVC2G17FX4-7 DIODES INCORPORATED 74LVC2G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1409-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of package: reel; tape
Case: X2-DFN1409-6
Family: LVC
Number of channels: 2
Produkt ist nicht verfügbar
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74LVC2G17FW4-7 DIODES INCORPORATED 74LVC2G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1010-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of package: reel; tape
Case: X2-DFN1010-6
Family: LVC
Number of channels: 2
Produkt ist nicht verfügbar
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74LVC2G17FZ4-7 DIODES INCORPORATED 74LVC2G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of package: reel; tape
Case: X2-DFN1410-6
Family: LVC
Number of channels: 2
Produkt ist nicht verfügbar
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SMBJ7.0A-13-F SMBJ7.0A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.78÷8.95V; 50A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.95V
Max. forward impulse current: 50A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMAJ36CA-13-F SMAJ36CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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95+0.9 EUR
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SMAJ36CAQ-13-F SMAJ36CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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74AHC1G126SE-7 74AHC1G126SE-7 DIODES INCORPORATED 74AHC1G126.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; AHC
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT353
Quiescent current: 40µA
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Manufacturer series: AHC
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS
auf Bestellung 1969 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.17 EUR
676+0.13 EUR
770+0.11 EUR
913+0.093 EUR
1127+0.075 EUR
1238+0.069 EUR
1303+0.065 EUR
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B190-13-F b170-1100b.pdf
B190-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: SMA
Kind of package: reel; tape
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 90V
auf Bestellung 1138 Stücke:
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358+0.24 EUR
486+0.18 EUR
589+0.14 EUR
684+0.12 EUR
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B190B-13-F B170B_B1100B.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: SMB
Leakage current: 5mA
Kind of package: reel; tape
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 90V
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B190Q-13-F B170Q-B1100Q.pdf
B190Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: SMA
Application: automotive industry
Leakage current: 5mA
Kind of package: reel; tape
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 90V
Produkt ist nicht verfügbar
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B190BQ-13-F B170BQ-B180BQ-B190BQ-B1100BQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: SMB
Application: automotive industry
Leakage current: 5mA
Kind of package: reel; tape
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 90V
Produkt ist nicht verfügbar
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SB190-T ds30116.pdf
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 90V; 1A; DO41; Ufmax: 0.8V; reel
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: DO41
Kind of package: reel
Max. forward voltage: 0.8V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 90V
Produkt ist nicht verfügbar
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BZX84C11-7-F BZX84Cxx_SER.pdf
BZX84C11-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 11V; SMD; SOT23; reel,tape; single diode
Kind of package: reel; tape
Case: SOT23
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±5.5%
Zener voltage: 11V
Semiconductor structure: single diode
Mounting: SMD
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3+28.37 EUR
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BZX84C11T-7-F BZX84CxxT_SER.pdf
BZX84C11T-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 11V; SMD; SOT523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Case: SOT523
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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DMMT3904W-13-F DMMT3904W.pdf
DMMT3904W-13-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Current gain: 30...300
Quantity in set/package: 10000pcs.
Produkt ist nicht verfügbar
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DMMT3904WQ-7-F DMMT3904WQ.pdf
DMMT3904WQ-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Current gain: 30...300
Quantity in set/package: 3000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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DMC2700UDM-7 DMC2700UDM-7.pdf
DMC2700UDM-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1.14/-1.34A
Power dissipation: 1.12W
Case: SOT26
Gate-source voltage: ±6V
On-state resistance: 0.4/0.7Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
auf Bestellung 3146 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
278+0.31 EUR
360+0.24 EUR
503+0.17 EUR
589+0.14 EUR
807+0.11 EUR
1000+0.1 EUR
3000+0.094 EUR
Mindestbestellmenge: 278 Stücke
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DMC4029SK4-13 DMC4029SK4.pdf
DMC4029SK4-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Mounting: SMD
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: 6.7/-4.9A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: TO252-4
On-state resistance: 0.032/0.055Ω
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
65+1.31 EUR
81+1.06 EUR
Mindestbestellmenge: 65 Stücke
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DMC2038LVT-7 DMC2038LVT-7.pdf
DMC2038LVT-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.1/-4.5A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.035/0.074Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMC3025LSD-13 DMC3025LSD-13.pdf
DMC3025LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.5/-8.5A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.02/0.045Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
14+6.08 EUR
Mindestbestellmenge: 14 Stücke
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DMC3400SDW-7 DMC3400SDW-7.pdf
DMC3400SDW-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 0.5/-0.36A
Power dissipation: 0.39W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.4/0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
auf Bestellung 929 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
278+0.31 EUR
363+0.24 EUR
414+0.2 EUR
653+0.13 EUR
929+0.092 EUR
Mindestbestellmenge: 278 Stücke
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SMBJ45A-13-F SMBJ_ser.pdf
SMBJ45A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 50÷57.5V; 8.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...57.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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BZT52C2V4S-7-F BZT52CxxS_ser.pdf
BZT52C2V4S-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.4V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DMP6350S-7 DMP6350S.pdf
DMP6350S-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.2A; Idm: -6A; 0.72W; SOT23
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Drain-source voltage: -60V
Pulsed drain current: -6A
Drain current: -1.2A
On-state resistance: 0.35Ω
Power dissipation: 0.72W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
auf Bestellung 1465 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
105+0.82 EUR
145+0.58 EUR
209+0.4 EUR
244+0.35 EUR
500+0.25 EUR
1000+0.24 EUR
Mindestbestellmenge: 105 Stücke
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AP130-15RG-7 AP130.pdf
AP130-15RG-7
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; SC59R; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 1.5V
Output current: 0.3A
Case: SC59R
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.7...5.5V
Kind of package: reel; tape
auf Bestellung 2634 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
260+0.33 EUR
309+0.27 EUR
353+0.24 EUR
500+0.23 EUR
Mindestbestellmenge: 260 Stücke
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AP7313-33SRG-7 AP7313.pdf
AP7313-33SRG-7
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23R; SMD
Manufacturer series: AP7313
Operating temperature: -40...85°C
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2...6V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Output voltage: 3.3V
Kind of package: reel; tape
Case: SOT23R
Number of channels: 1
Tolerance: ±2%
auf Bestellung 1183 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
264+0.32 EUR
321+0.26 EUR
363+0.24 EUR
428+0.2 EUR
521+0.17 EUR
569+0.15 EUR
596+0.14 EUR
Mindestbestellmenge: 264 Stücke
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AL3353S-13 AL3353.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; boost; LED driver; SO8; Ch: 1; 9÷40VDC
Topology: boost
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver
Kind of package: reel; tape
Case: SO8
Operating temperature: -40...105°C
Number of channels: 1
Operating voltage: 9...40V DC
Produkt ist nicht verfügbar
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AP7313-25SAG-7 AP7313.pdf
AP7313-25SAG-7
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23; SMD
Manufacturer series: AP7313
Operating temperature: -40...85°C
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2...6V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Output voltage: 2.5V
Kind of package: reel; tape
Case: SOT23
Number of channels: 1
Tolerance: ±2%
auf Bestellung 2674 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
264+0.32 EUR
325+0.26 EUR
368+0.23 EUR
432+0.2 EUR
527+0.17 EUR
575+0.14 EUR
Mindestbestellmenge: 264 Stücke
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AP7313-33SAG-7 AP7313.pdf
AP7313-33SAG-7
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23; SMD
Manufacturer series: AP7313
Operating temperature: -40...85°C
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2...6V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Output voltage: 3.3V
Kind of package: reel; tape
Case: SOT23
Number of channels: 1
Tolerance: ±2%
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1+85.08 EUR
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DMN6075S-7 DMN6075S.pdf
DMN6075S-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2863 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
228+0.37 EUR
304+0.29 EUR
439+0.19 EUR
516+0.17 EUR
736+0.12 EUR
1000+0.11 EUR
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ZXMN6A07FTA ZXMN6A07F.pdf
ZXMN6A07FTA
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 6.9A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.1A
Pulsed drain current: 6.9A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 1.65nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 6978 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
82+1.04 EUR
123+0.69 EUR
184+0.46 EUR
217+0.39 EUR
500+0.29 EUR
1000+0.26 EUR
3000+0.23 EUR
6000+0.21 EUR
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DMN62D0U-7 DMN62D0U.pdf
DMN62D0U-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.38W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.38W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 7710 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
358+0.24 EUR
439+0.19 EUR
500+0.17 EUR
743+0.11 EUR
985+0.087 EUR
1217+0.07 EUR
3000+0.049 EUR
Mindestbestellmenge: 358 Stücke
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SMCJ26A-13-F SMCJ_ser.pdf
SMCJ26A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 35.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 35.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1303 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
87+0.99 EUR
105+0.82 EUR
118+0.73 EUR
186+0.45 EUR
500+0.33 EUR
1000+0.3 EUR
Mindestbestellmenge: 87 Stücke
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SMBJ22A-13-F SMBJ_ser.pdf
SMBJ22A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SMBJ22AQ-13-F ds40740.pdf
SMBJ22AQ-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SMAJ20CA-13-F SMAJ_ser.pdf
SMAJ20CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Max. off-state voltage: 20V
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.4kW
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
auf Bestellung 366 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
228+0.37 EUR
285+0.3 EUR
321+0.26 EUR
366+0.24 EUR
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SMAJ20CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AP5100WG-7 AP5100-DTE.pdf
AP5100WG-7
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷24VDC; Uout: 0.81÷15VDC; 1.2A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...24V DC
Output voltage: 0.81...15V DC
Output current: 1.2A
Case: SOT26
Mounting: SMD
Frequency: 1.4MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 90%
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
35+2.43 EUR
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SMAJ15A-13-F SMAJ_ser.pdf
SMAJ15A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 5027 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
358+0.24 EUR
432+0.2 EUR
562+0.15 EUR
618+0.14 EUR
685+0.12 EUR
736+0.12 EUR
1000+0.11 EUR
5000+0.1 EUR
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SMAJ14A-13-F SMAJ_ser.pdf
SMAJ14A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 357 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
209+0.4 EUR
266+0.32 EUR
309+0.27 EUR
357+0.24 EUR
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SMBJ13CA-13-F SMBJ_ser.pdf
SMBJ13CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷16.5V; 27.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 27.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 1140 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
179+0.48 EUR
211+0.4 EUR
241+0.36 EUR
404+0.21 EUR
556+0.15 EUR
1000+0.14 EUR
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SMAJ13CA-13-F SMAJ_ser.pdf
SMAJ13CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DMG9933USD-13 DMG9933USD.pdf
DMG9933USD-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -20A
Drain current: -3A
Gate charge: 6.5nC
On-state resistance: 0.11Ω
Power dissipation: 1.15W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
105+0.82 EUR
144+0.6 EUR
242+0.36 EUR
500+0.25 EUR
1000+0.23 EUR
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DMP3056LSD-13 DMP3056LSD.pdf
DMP3056LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.1A; 2.5W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.1A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 967 Stücke:
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AnzahlPrivatkunde
65+1.31 EUR
104+0.82 EUR
159+0.54 EUR
500+0.42 EUR
650+0.4 EUR
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DMP3085LSD-13 DMP3085LSD.pdf
DMP3085LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Pulsed drain current: -20A
Drain-source voltage: -30V
Drain current: -3.1A
On-state resistance: 70mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 208 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
143+0.6 EUR
205+0.42 EUR
208+0.4 EUR
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DMC4040SSD-13 DMC4040SSD-13.pdf
DMC4040SSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 7.3/-7.5A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.04/0.045Ω
Produkt ist nicht verfügbar
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DMHC3025LSD-13 DMHC3025LSD.pdf
DMHC3025LSD-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; complementary pair; 30/-30V; 1.5W
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.5W
Gate charge: 11.7/11.4nC
Polarisation: unipolar
Drain current: 6/-4.2A
Kind of channel: enhancement
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 25/50mΩ
Produkt ist nicht verfügbar
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DMN6040SSD-13 DMN6040SSD.pdf
DMN6040SSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
On-state resistance: 55mΩ
Power dissipation: 0.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 324 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
97+0.88 EUR
173+0.49 EUR
232+0.37 EUR
248+0.35 EUR
260+0.33 EUR
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DMG4800LSD-13 DMG4800LSD.pdf
DMG4800LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Mounting: SMD
Power dissipation: 1.5W
Polarisation: unipolar
Drain current: 8.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 22mΩ
auf Bestellung 443 Stücke:
Lieferzeit 14-21 Tag (e)
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80+1.07 EUR
108+0.79 EUR
156+0.55 EUR
182+0.46 EUR
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DMP2040USD-13 DMP2040USD.pdf
DMP2040USD-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -30A; 1.6W; SO8
Mounting: SMD
Case: SO8
Pulsed drain current: -30A
Power dissipation: 1.6W
Gate charge: 19nC
Polarisation: unipolar
Drain current: -5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
On-state resistance: 52mΩ
auf Bestellung 2230 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
88+0.98 EUR
106+0.81 EUR
121+0.7 EUR
204+0.42 EUR
500+0.31 EUR
1000+0.29 EUR
Mindestbestellmenge: 88 Stücke
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DMP6050SSD-13 DMP6050SSD.pdf
DMP6050SSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8
Mounting: SMD
Pulsed drain current: -32A
Power dissipation: 1.2W
Polarisation: unipolar
Drain current: -3.9A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET x2
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 55mΩ
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
34+2.5 EUR
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DMC4050SSD-13 DMC4050SSD-13.pdf
DMC4050SSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 5.8/-5.5A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 45/45mΩ
Produkt ist nicht verfügbar
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BZX84B27-7-F BZX84Bxx(x).pdf BZX84Bxxx.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 27V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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FMMT549TA FMMT549.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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FMMT549ATA FMMT549.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...500
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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DMNH4015SSD-13 DMNH4015SSD.pdf
DMNH4015SSD-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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DMNH4015SSDQ-13 DMNH4015SSDQ.pdf
DMNH4015SSDQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BZX84C3V9TS-7-F BZX84CxxTS_SER.pdf
BZX84C3V9TS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZX84C3V9W-7-F BZX84CxxW_SER.pdf
BZX84C3V9W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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74LVC2G17DW-7 74LVC2G17.pdf
74LVC2G17DW-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; SOT363; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of package: reel; tape
Case: SOT363
Family: LVC
Number of channels: 2
Produkt ist nicht verfügbar
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74LVC2G17FX4-7 74LVC2G17.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1409-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of package: reel; tape
Case: X2-DFN1409-6
Family: LVC
Number of channels: 2
Produkt ist nicht verfügbar
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74LVC2G17FW4-7 74LVC2G17.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1010-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of package: reel; tape
Case: X2-DFN1010-6
Family: LVC
Number of channels: 2
Produkt ist nicht verfügbar
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74LVC2G17FZ4-7 74LVC2G17.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of package: reel; tape
Case: X2-DFN1410-6
Family: LVC
Number of channels: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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SMBJ7.0A-13-F SMBJ_ser.pdf
SMBJ7.0A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.78÷8.95V; 50A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.95V
Max. forward impulse current: 50A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMAJ36CA-13-F SMAJ_ser.pdf
SMAJ36CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
95+0.9 EUR
Mindestbestellmenge: 95 Stücke
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SMAJ36CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ36CAQ-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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74AHC1G126SE-7 74AHC1G126.pdf
74AHC1G126SE-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; AHC
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT353
Quiescent current: 40µA
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Manufacturer series: AHC
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS
auf Bestellung 1969 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
500+0.17 EUR
676+0.13 EUR
770+0.11 EUR
913+0.093 EUR
1127+0.075 EUR
1238+0.069 EUR
1303+0.065 EUR
Mindestbestellmenge: 500 Stücke
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