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74LVC1G125FS3-7 DIODES INCORPORATED 74LVC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN0808-4; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN0808-4
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Family: LVC
Produkt ist nicht verfügbar
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AP1534SG-13 AP1534SG-13 DIODES INCORPORATED AP1534x-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.4÷18VDC; Uout: 0.8÷18VDC; 2A; SOP8
Input voltage: 4.4...18V DC
Output voltage: 0.8...18V DC
Output current: 2A
Case: SOP8
Mounting: SMD
Efficiency: 91%
Operating temperature: -20...85°C
Type of integrated circuit: PMIC
Topology: buck
Kind of package: reel; tape
Frequency: 300kHz
Kind of integrated circuit: DC/DC converter
auf Bestellung 2479 Stücke:
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87+0.83 EUR
122+0.59 EUR
135+0.53 EUR
143+0.5 EUR
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SBR6200CTL-13 DIODES INCORPORATED SBR6200CTL.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SBR®; SMD; 200V; 3Ax2; reel,tape
Mounting: SMD
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: SBR®
Max. forward voltage: 0.85V
Load current: 3A x2
Max. forward impulse current: 80A
Max. off-state voltage: 200V
Case: DPAK
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DMP1200UFR4-7 DIODES INCORPORATED DMP1200UFR4.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2A; 1.26W; X2-DFN1010-3
Case: X2-DFN1010-3
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
Gate charge: 5.8nC
On-state resistance: 0.38Ω
Kind of channel: enhancement
Power dissipation: 1.26W
Gate-source voltage: ±8V
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DMP2200UFCL-7 DIODES INCORPORATED DMP2200UFCL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -8A; 1.58W
Case: U-DFN1616-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -8A
Drain current: -1.2A
Gate charge: 2.2nC
On-state resistance: 0.65Ω
Kind of channel: enhancement
Power dissipation: 1.58W
Gate-source voltage: ±8V
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SMBJ36CA-13-F DIODES INCORPORATED ds19002.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMBJ36CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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MMDT2222A-7-F DIODES INCORPORATED ds30125.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Current gain: 35...300
Quantity in set/package: 3000pcs.
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SMAJ16CA-13-F SMAJ16CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 4281 Stücke:
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500+0.14 EUR
556+0.13 EUR
756+0.095 EUR
900+0.08 EUR
1000+0.077 EUR
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SMAJ16CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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ZUMT617TA DIODES INCORPORATED ZUMT617.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 1.5A; 500mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 1.5A
Power dissipation: 0.5W
Case: SOT323
Pulsed collector current: 5A
Current gain: 30...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 180MHz
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SMCJ58A-13-F SMCJ58A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ58AQ-13-F DIODES INCORPORATED Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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PAM8303CBSC DIODES INCORPORATED PAM8303C.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1
Amplifier class: D
Number of channels: 1
Integrated circuit features: low noise; thermal protection
Case: MSOP8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output power: 3W
Voltage supply range: 2.8...5.5V DC
Type of integrated circuit: audio amplifier
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PAM8303DBSC DIODES INCORPORATED PAM8303D.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; thermal protection; Ch: 1; MSOP8
Amplifier class: D
Number of channels: 1
Integrated circuit features: thermal protection
Case: MSOP8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output power: 3W
Voltage supply range: 2.8...5.5V DC
Type of integrated circuit: audio amplifier
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PAM8303DBYC DIODES INCORPORATED PAM8303D.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; thermal protection; Ch: 1
Amplifier class: D
Number of channels: 1
Integrated circuit features: thermal protection
Case: U-DFN3030-8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output power: 3W
Voltage supply range: 2.8...5.5V DC
Type of integrated circuit: audio amplifier
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PDS340-13 DIODES INCORPORATED ds30478.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: PowerDI®5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 25mA
Max. forward voltage: 0.61V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 90A
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PDS340Q-13 DIODES INCORPORATED PDS340Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: PowerDI®5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 25mA
Max. forward voltage: 0.61V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 90A
Application: automotive industry
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ZR431F01TA ZR431F01TA DIODES INCORPORATED ZR431F.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 5356 Stücke:
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167+0.43 EUR
236+0.3 EUR
265+0.27 EUR
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ZR431F005TA ZR431F005TA DIODES INCORPORATED zr431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 150mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 150mA
auf Bestellung 259 Stücke:
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129+0.56 EUR
182+0.39 EUR
202+0.35 EUR
231+0.31 EUR
250+0.29 EUR
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AS431AZTR-G1 AS431AZTR-G1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; TO92; Ammo Pack,tape
Mounting: THT
Operating temperature: -40...125°C
Case: TO92
Type of integrated circuit: voltage reference source
Maximum output current: 0.1A
Tolerance: ±0.5%
Reference voltage: 2.5V
Operating voltage: 2.5...36V
Kind of package: Ammo Pack; tape
auf Bestellung 1988 Stücke:
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556+0.13 EUR
736+0.097 EUR
807+0.089 EUR
955+0.075 EUR
1177+0.061 EUR
1263+0.057 EUR
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DDC114YU-7-F DDC114YU-7-F DIODES INCORPORATED DDC_XXXX_U.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 70mA; 200mW; SOT363; R1: 10kΩ
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Collector current: 70mA
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
auf Bestellung 4339 Stücke:
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500+0.14 EUR
650+0.11 EUR
887+0.081 EUR
1017+0.07 EUR
1356+0.053 EUR
1498+0.048 EUR
3000+0.043 EUR
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DDC144EU-7-F DDC144EU-7-F DIODES INCORPORATED ddcxxxxU.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 30mA; 200mW; SOT363; R1: 47kΩ
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Collector current: 30mA
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 100...600
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
auf Bestellung 700 Stücke:
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385+0.19 EUR
562+0.13 EUR
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DDC114EU-7-F DDC114EU-7-F DIODES INCORPORATED DDC_XXXX_U.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 50mA; 200mW; SOT363; R1: 10kΩ
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
auf Bestellung 2021 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
527+0.14 EUR
799+0.09 EUR
1003+0.071 EUR
1102+0.065 EUR
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DMP610DL-7 DMP610DL-7 DIODES INCORPORATED DMP610DL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.13A
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 560pC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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358+0.2 EUR
500+0.14 EUR
813+0.089 EUR
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DMP610DLQ-7 DMP610DLQ-7 DIODES INCORPORATED DMP610DLQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.13A
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 560pC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMP610DL-13 DMP610DL-13 DIODES INCORPORATED DMP610DL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.13A
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 560pC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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PDS5100-13 DIODES INCORPORATED ds30483.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Leakage current: 5mA
Max. forward impulse current: 120A
Kind of package: reel; tape
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PDS5100H-13 DIODES INCORPORATED ds30471.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
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PDS5100HQ-13 DIODES INCORPORATED ds30471.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Application: automotive industry
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PDS5100HQ-13D DIODES INCORPORATED ds30471.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Application: automotive industry
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PDS5100Q-13D DIODES INCORPORATED PDS5100Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Application: automotive industry
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BZX84C6V8-7-F BZX84C6V8-7-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.8V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 409 Stücke:
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409+0.17 EUR
Mindestbestellmenge: 409
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AZ23C6V8-7-F AZ23C6V8-7-F DIODES INCORPORATED AZ23C_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
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DMPH6250SQ-7 DMPH6250SQ-7 DIODES INCORPORATED DMPH6250SQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH6250SQ-13 DMPH6250SQ-13 DIODES INCORPORATED DMPH6250SQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DDZ30CSF-7 DIODES INCORPORATED ds31987.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD323F; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323F
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Produkt ist nicht verfügbar
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SMAJ90A-13-F SMAJ90A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 100÷111V; 2.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3495 Stücke:
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368+0.19 EUR
449+0.16 EUR
610+0.12 EUR
828+0.086 EUR
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MBRB10100CT-13 MBRB10100CT-13 DIODES INCORPORATED MBRB10100CT_Rev.5-2_Apr2016.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO263AB
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Leakage current: 10mA
Kind of package: reel; tape
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MBRD10100CT-13 DIODES INCORPORATED MBRD10100CT.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: DPAK
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Leakage current: 10mA
Kind of package: reel; tape
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MBRB10100CT DIODES INCORPORATED MBR1080(90)(100)CT(-1)%20MBRB1080(90)(100)CT%20N0735%20REV.A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Leakage current: 10mA
Kind of package: tube
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DMG6601LVT-7 DMG6601LVT-7 DIODES INCORPORATED DMG6601LVT-7.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 3/-2A
Power dissipation: 0.54W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.065/0.142Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 547 Stücke:
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173+0.41 EUR
235+0.3 EUR
341+0.21 EUR
404+0.18 EUR
547+0.13 EUR
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B140HW-7 B140HW-7 DIODES INCORPORATED B140HW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 1A; reel,tape
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward voltage: 0.51V
Load current: 1A
Max. forward impulse current: 16A
Max. off-state voltage: 40V
auf Bestellung 2923 Stücke:
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250+0.29 EUR
313+0.23 EUR
350+0.2 EUR
511+0.14 EUR
695+0.1 EUR
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B140B-13-F B140B-13-F DIODES INCORPORATED b120-160b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Capacitance: 0.11nF
Max. forward voltage: 0.5V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
auf Bestellung 2555 Stücke:
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264+0.27 EUR
368+0.19 EUR
466+0.15 EUR
518+0.14 EUR
674+0.11 EUR
1000+0.094 EUR
2500+0.079 EUR
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B140HB-13-F B140HB-13-F DIODES INCORPORATED B140HB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Capacitance: 80pF
Max. forward voltage: 0.49V
Load current: 1A
Max. forward impulse current: 45A
Max. off-state voltage: 40V
auf Bestellung 2761 Stücke:
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200+0.36 EUR
257+0.28 EUR
311+0.23 EUR
439+0.16 EUR
463+0.15 EUR
625+0.11 EUR
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DDZ9678-7 DDZ9678-7 DIODES INCORPORATED DDZ9689-7.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 1.8V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 1.8V
auf Bestellung 5885 Stücke:
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417+0.17 EUR
658+0.11 EUR
1117+0.064 EUR
1507+0.047 EUR
1548+0.046 EUR
1667+0.043 EUR
3000+0.038 EUR
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AP7354D-18W5-7 AP7354D-18W5-7 DIODES INCORPORATED AP7354.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 1.8V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...5.5V
Integrated circuit features: output discharge; shutdown mode control input
Manufacturer series: AP7354
auf Bestellung 3000 Stücke:
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186+0.39 EUR
264+0.27 EUR
298+0.24 EUR
343+0.21 EUR
360+0.2 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 186
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DMN10H120SFG-13 DIODES INCORPORATED DMN10H120SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.5W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN10H120SFG-7 DIODES INCORPORATED DMN10H120SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.5W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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AS358MTR-G1 AS358MTR-G1 DIODES INCORPORATED AS358-358A-358B.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; SO8; 100dB; 2mV; 550mW
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...85°C
Open-loop gain: 100dB
Integrated circuit features: low power
Input offset voltage: 2mV
Kind of package: reel; tape
Power dissipation: 0.55W
auf Bestellung 1851 Stücke:
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455+0.16 EUR
650+0.11 EUR
745+0.096 EUR
910+0.079 EUR
1021+0.07 EUR
1109+0.064 EUR
1185+0.06 EUR
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AS358MTR-E1 DIODES INCORPORATED AS358-358A-358B.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; SO8; Features: low power
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
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AS358MMTR-G1 DIODES INCORPORATED AS358-358A-358B.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; MSOP8; 7mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: MSOP8
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
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FMMT617 DIODES INCORPORATED FMMT617.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 120MHz
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FMMT617TA FMMT617TA DIODES INCORPORATED FMMT617.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Produkt ist nicht verfügbar
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AP1506-50K5G-13 AP1506-50K5G-13 DIODES INCORPORATED AP1506x-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷22VDC; Uout: 5VDC; 3A; TO263-5; SMD
Kind of package: reel; tape
Topology: buck
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -20...85°C
Output current: 3A
Input voltage: 4.5...22V DC
Output voltage: 5V DC
Efficiency: 80%
Frequency: 150kHz
Case: TO263-5
auf Bestellung 463 Stücke:
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44+1.63 EUR
50+1.44 EUR
55+1.32 EUR
100+1.27 EUR
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GBJ1506-F GBJ1506-F DIODES INCORPORATED GBJ15_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 240A
Version: flat
Kind of package: tube
Leads: flat pin
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 15A
Max. forward impulse current: 0.24kA
Max. off-state voltage: 0.6kV
Case: GBJ
auf Bestellung 107 Stücke:
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30+2.42 EUR
48+1.5 EUR
50+1.43 EUR
75+1.17 EUR
105+1.1 EUR
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DDTC143ECA-7-F DDTC143ECA-7-F DIODES INCORPORATED ds30329.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
625+0.11 EUR
989+0.072 EUR
1276+0.056 EUR
1421+0.05 EUR
3000+0.041 EUR
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DDTC143ZCA-7-F DDTC143ZCA-7-F DIODES INCORPORATED ds30330.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
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23+3.1 EUR
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DDTC143ZUA-7-F
+1
 		DDTC143ZUA-7-F DIODES INCORPORATED ds30322.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
auf Bestellung 179 Stücke:
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179+0.4 EUR
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BCV47TA BCV47TA DIODES INCORPORATED bcv27%2C47.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 500mA; 330mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Pulsed collector current: 0.8A
Quantity in set/package: 3000pcs.
auf Bestellung 142 Stücke:
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142+0.5 EUR
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74LVC1G125FS3-7 74LVC1G125.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN0808-4; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN0808-4
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Family: LVC
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AP1534SG-13 AP1534x-DTE.pdf
AP1534SG-13
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.4÷18VDC; Uout: 0.8÷18VDC; 2A; SOP8
Input voltage: 4.4...18V DC
Output voltage: 0.8...18V DC
Output current: 2A
Case: SOP8
Mounting: SMD
Efficiency: 91%
Operating temperature: -20...85°C
Type of integrated circuit: PMIC
Topology: buck
Kind of package: reel; tape
Frequency: 300kHz
Kind of integrated circuit: DC/DC converter
auf Bestellung 2479 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
87+0.83 EUR
122+0.59 EUR
135+0.53 EUR
143+0.5 EUR
Mindestbestellmenge: 87
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SBR6200CTL-13 SBR6200CTL.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SBR®; SMD; 200V; 3Ax2; reel,tape
Mounting: SMD
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: SBR®
Max. forward voltage: 0.85V
Load current: 3A x2
Max. forward impulse current: 80A
Max. off-state voltage: 200V
Case: DPAK
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DMP1200UFR4-7 DMP1200UFR4.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2A; 1.26W; X2-DFN1010-3
Case: X2-DFN1010-3
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
Gate charge: 5.8nC
On-state resistance: 0.38Ω
Kind of channel: enhancement
Power dissipation: 1.26W
Gate-source voltage: ±8V
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DMP2200UFCL-7 DMP2200UFCL.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -8A; 1.58W
Case: U-DFN1616-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -8A
Drain current: -1.2A
Gate charge: 2.2nC
On-state resistance: 0.65Ω
Kind of channel: enhancement
Power dissipation: 1.58W
Gate-source voltage: ±8V
Produkt ist nicht verfügbar
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SMBJ36CA-13-F ds19002.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMBJ36CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMDT2222A-7-F ds30125.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Current gain: 35...300
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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SMAJ16CA-13-F SMAJ_ser.pdf
SMAJ16CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 4281 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
556+0.13 EUR
756+0.095 EUR
900+0.08 EUR
1000+0.077 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ16CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ZUMT617TA ZUMT617.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 1.5A; 500mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 1.5A
Power dissipation: 0.5W
Case: SOT323
Pulsed collector current: 5A
Current gain: 30...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 180MHz
Produkt ist nicht verfügbar
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SMCJ58A-13-F SMCJ_ser.pdf
SMCJ58A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMCJ58AQ-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8303CBSC PAM8303C.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1
Amplifier class: D
Number of channels: 1
Integrated circuit features: low noise; thermal protection
Case: MSOP8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output power: 3W
Voltage supply range: 2.8...5.5V DC
Type of integrated circuit: audio amplifier
Produkt ist nicht verfügbar
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PAM8303DBSC PAM8303D.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; thermal protection; Ch: 1; MSOP8
Amplifier class: D
Number of channels: 1
Integrated circuit features: thermal protection
Case: MSOP8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output power: 3W
Voltage supply range: 2.8...5.5V DC
Type of integrated circuit: audio amplifier
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8303DBYC PAM8303D.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; thermal protection; Ch: 1
Amplifier class: D
Number of channels: 1
Integrated circuit features: thermal protection
Case: U-DFN3030-8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output power: 3W
Voltage supply range: 2.8...5.5V DC
Type of integrated circuit: audio amplifier
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDS340-13 ds30478.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: PowerDI®5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 25mA
Max. forward voltage: 0.61V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 90A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDS340Q-13 PDS340Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: PowerDI®5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 25mA
Max. forward voltage: 0.61V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 90A
Application: automotive industry
Produkt ist nicht verfügbar
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ZR431F01TA ZR431F.pdf
ZR431F01TA
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 5356 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
236+0.3 EUR
265+0.27 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
ZR431F005TA zr431.pdf
ZR431F005TA
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 150mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 150mA
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
182+0.39 EUR
202+0.35 EUR
231+0.31 EUR
250+0.29 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
AS431AZTR-G1 AS431.pdf
AS431AZTR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; TO92; Ammo Pack,tape
Mounting: THT
Operating temperature: -40...125°C
Case: TO92
Type of integrated circuit: voltage reference source
Maximum output current: 0.1A
Tolerance: ±0.5%
Reference voltage: 2.5V
Operating voltage: 2.5...36V
Kind of package: Ammo Pack; tape
auf Bestellung 1988 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
736+0.097 EUR
807+0.089 EUR
955+0.075 EUR
1177+0.061 EUR
1263+0.057 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
DDC114YU-7-F DDC_XXXX_U.pdf
DDC114YU-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 70mA; 200mW; SOT363; R1: 10kΩ
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Collector current: 70mA
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
auf Bestellung 4339 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
650+0.11 EUR
887+0.081 EUR
1017+0.07 EUR
1356+0.053 EUR
1498+0.048 EUR
3000+0.043 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
DDC144EU-7-F ddcxxxxU.pdf
DDC144EU-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 30mA; 200mW; SOT363; R1: 47kΩ
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Collector current: 30mA
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 100...600
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
562+0.13 EUR
700+0.1 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
DDC114EU-7-F DDC_XXXX_U.pdf
DDC114EU-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 50mA; 200mW; SOT363; R1: 10kΩ
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
auf Bestellung 2021 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
527+0.14 EUR
799+0.09 EUR
1003+0.071 EUR
1102+0.065 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
DMP610DL-7 DMP610DL.pdf
DMP610DL-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.13A
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 560pC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 813 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
500+0.14 EUR
813+0.089 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
DMP610DLQ-7 DMP610DLQ.pdf
DMP610DLQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.13A
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 560pC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP610DL-13 DMP610DL.pdf
DMP610DL-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.13A
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 560pC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDS5100-13 ds30483.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Leakage current: 5mA
Max. forward impulse current: 120A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDS5100H-13 ds30471.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDS5100HQ-13 ds30471.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDS5100HQ-13D ds30471.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDS5100Q-13D PDS5100Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BZX84C6V8-7-F BZX84Cxx_SER.pdf
BZX84C6V8-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.8V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 409 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
409+0.17 EUR
Mindestbestellmenge: 409
Im Einkaufswagen  Stück im Wert von  UAH
AZ23C6V8-7-F AZ23C_ser.pdf
AZ23C6V8-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Produkt ist nicht verfügbar
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DMPH6250SQ-7 DMPH6250SQ.pdf
DMPH6250SQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMPH6250SQ-13 DMPH6250SQ.pdf
DMPH6250SQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DDZ30CSF-7 ds31987.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD323F; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323F
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ90A-13-F SMAJ_ser.pdf
SMAJ90A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 100÷111V; 2.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3495 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
368+0.19 EUR
449+0.16 EUR
610+0.12 EUR
828+0.086 EUR
1000+0.076 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
MBRB10100CT-13 MBRB10100CT_Rev.5-2_Apr2016.pdf
MBRB10100CT-13
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO263AB
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Leakage current: 10mA
Kind of package: reel; tape
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
MBRD10100CT-13 MBRD10100CT.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: DPAK
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Leakage current: 10mA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MBRB10100CT MBR1080(90)(100)CT(-1)%20MBRB1080(90)(100)CT%20N0735%20REV.A.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Leakage current: 10mA
Kind of package: tube
Produkt ist nicht verfügbar
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DMG6601LVT-7 DMG6601LVT-7.pdf
DMG6601LVT-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 3/-2A
Power dissipation: 0.54W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.065/0.142Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 547 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
235+0.3 EUR
341+0.21 EUR
404+0.18 EUR
547+0.13 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
B140HW-7 B140HW.pdf
B140HW-7
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 1A; reel,tape
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward voltage: 0.51V
Load current: 1A
Max. forward impulse current: 16A
Max. off-state voltage: 40V
auf Bestellung 2923 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
313+0.23 EUR
350+0.2 EUR
511+0.14 EUR
695+0.1 EUR
1000+0.093 EUR
Mindestbestellmenge: 250
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B140B-13-F b120-160b.pdf
B140B-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Capacitance: 0.11nF
Max. forward voltage: 0.5V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
auf Bestellung 2555 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
368+0.19 EUR
466+0.15 EUR
518+0.14 EUR
674+0.11 EUR
1000+0.094 EUR
2500+0.079 EUR
Mindestbestellmenge: 264
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B140HB-13-F B140HB.pdf
B140HB-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Capacitance: 80pF
Max. forward voltage: 0.49V
Load current: 1A
Max. forward impulse current: 45A
Max. off-state voltage: 40V
auf Bestellung 2761 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
257+0.28 EUR
311+0.23 EUR
439+0.16 EUR
463+0.15 EUR
625+0.11 EUR
Mindestbestellmenge: 200
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DDZ9678-7 DDZ9689-7.pdf
DDZ9678-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 1.8V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 1.8V
auf Bestellung 5885 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
658+0.11 EUR
1117+0.064 EUR
1507+0.047 EUR
1548+0.046 EUR
1667+0.043 EUR
3000+0.038 EUR
Mindestbestellmenge: 417
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AP7354D-18W5-7 AP7354.pdf
AP7354D-18W5-7
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 1.8V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...5.5V
Integrated circuit features: output discharge; shutdown mode control input
Manufacturer series: AP7354
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
264+0.27 EUR
298+0.24 EUR
343+0.21 EUR
360+0.2 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 186
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DMN10H120SFG-13 DMN10H120SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.5W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN10H120SFG-7 DMN10H120SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.5W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AS358MTR-G1 AS358-358A-358B.pdf
AS358MTR-G1
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; SO8; 100dB; 2mV; 550mW
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...85°C
Open-loop gain: 100dB
Integrated circuit features: low power
Input offset voltage: 2mV
Kind of package: reel; tape
Power dissipation: 0.55W
auf Bestellung 1851 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
650+0.11 EUR
745+0.096 EUR
910+0.079 EUR
1021+0.07 EUR
1109+0.064 EUR
1185+0.06 EUR
Mindestbestellmenge: 455
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AS358MTR-E1 AS358-358A-358B.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; SO8; Features: low power
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
Produkt ist nicht verfügbar
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AS358MMTR-G1 AS358-358A-358B.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; MSOP8; 7mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: MSOP8
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
Produkt ist nicht verfügbar
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FMMT617 FMMT617.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Produkt ist nicht verfügbar
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FMMT617TA FMMT617.pdf
FMMT617TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Produkt ist nicht verfügbar
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AP1506-50K5G-13 AP1506x-DTE.pdf
AP1506-50K5G-13
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷22VDC; Uout: 5VDC; 3A; TO263-5; SMD
Kind of package: reel; tape
Topology: buck
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -20...85°C
Output current: 3A
Input voltage: 4.5...22V DC
Output voltage: 5V DC
Efficiency: 80%
Frequency: 150kHz
Case: TO263-5
auf Bestellung 463 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
50+1.44 EUR
55+1.32 EUR
100+1.27 EUR
Mindestbestellmenge: 44
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GBJ1506-F GBJ15_ser.pdf
GBJ1506-F
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 240A
Version: flat
Kind of package: tube
Leads: flat pin
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 15A
Max. forward impulse current: 0.24kA
Max. off-state voltage: 0.6kV
Case: GBJ
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.42 EUR
48+1.5 EUR
50+1.43 EUR
75+1.17 EUR
105+1.1 EUR
Mindestbestellmenge: 30
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DDTC143ECA-7-F ds30329.pdf
DDTC143ECA-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
625+0.11 EUR
989+0.072 EUR
1276+0.056 EUR
1421+0.05 EUR
3000+0.041 EUR
Mindestbestellmenge: 417
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DDTC143ZCA-7-F ds30330.pdf
DDTC143ZCA-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.1 EUR
Mindestbestellmenge: 23
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DDTC143ZUA-7-F ds30322.pdf
DDTC143ZUA-7-F
+1
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
auf Bestellung 179 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
Mindestbestellmenge: 179
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BCV47TA bcv27%2C47.pdf
BCV47TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 500mA; 330mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Pulsed collector current: 0.8A
Quantity in set/package: 3000pcs.
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
142+0.5 EUR
Mindestbestellmenge: 142
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