
DMN3404LQ-7 Diodes Zetex
auf Bestellung 2370000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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3000+ | 0.12 EUR |
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Technische Details DMN3404LQ-7 Diodes Zetex
Description: MOSFET BVDSS: 25V~30V SOT23 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), Rds On (Max) @ Id, Vgs: 28mOhm @ 5.8A, 10V, Power Dissipation (Max): 720mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMN3404LQ-7 nach Preis ab 0.10 EUR bis 0.84 EUR
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DMN3404LQ-7 | Hersteller : Diodes Zetex |
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auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3404LQ-7 | Hersteller : Diodes Zetex |
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auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3404LQ-7 | Hersteller : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 5.8A, 10V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 381000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3404LQ-7 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 5.8A, 10V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 383290 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3404LQ-7 | Hersteller : Diodes Incorporated |
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auf Bestellung 3000 Stücke: Lieferzeit 66-70 Tag (e) |
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DMN3404LQ-7 | Hersteller : Diodes Zetex |
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Produkt ist nicht verfügbar |
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DMN3404LQ-7 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 30A; 1.4W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 30A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Gate charge: 16nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMN3404LQ-7 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 30A; 1.4W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 30A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Gate charge: 16nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |