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DMG3406L-7 DMG3406L-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C79BBF7A2078BF&compId=DMG3406L.pdf?ci_sign=32d58b8a920b330699f73edcb454730fa26ea4a0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Power dissipation: 1.4W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
auf Bestellung 2876 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
295+0.24 EUR
460+0.16 EUR
552+0.13 EUR
783+0.091 EUR
1000+0.081 EUR
1500+0.077 EUR
Mindestbestellmenge: 193
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SMAJ26A-13-F SMAJ26A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 2262 Stücke:
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228+0.31 EUR
281+0.25 EUR
334+0.21 EUR
715+0.1 EUR
953+0.075 EUR
Mindestbestellmenge: 228
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ZXTR2005Z-13 ZXTR2005Z-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE985B42B8157A898BF&compId=ZXTR2005Z.pdf?ci_sign=c4cb0e2d00d2d39614a4bd28867f8e37417ee48c Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.038A; SOT89; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 38mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±10%
Number of channels: 1
Input voltage: 10...100V
auf Bestellung 2318 Stücke:
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167+0.43 EUR
207+0.35 EUR
234+0.31 EUR
274+0.26 EUR
304+0.24 EUR
329+0.22 EUR
360+0.2 EUR
500+0.19 EUR
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BSS84Q-13-F BSS84Q-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED893F6CEBA2A18&compId=BSS84.pdf?ci_sign=668ed4aeac2cfcc1da331a3aa0cfdaaf2eeb09f2 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -130mA
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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BSS84Q-7-F BSS84Q-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED893F6CEBA2A18&compId=BSS84.pdf?ci_sign=668ed4aeac2cfcc1da331a3aa0cfdaaf2eeb09f2 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -130mA
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 442 Stücke:
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417+0.17 EUR
442+0.16 EUR
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BSS84W-7-F BSS84W-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986DEC7E1F851B8BF&compId=BSS84W.pdf?ci_sign=63714c7339417f7132fb61c9aeb1be0b0505177d Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.2W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -130mA
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 1864 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
532+0.13 EUR
665+0.11 EUR
735+0.097 EUR
932+0.077 EUR
1040+0.069 EUR
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BZT52C9V1-7-F BZT52C9V1-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6 Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 1113 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
926+0.077 EUR
1113+0.064 EUR
Mindestbestellmenge: 715
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BC858A-7-F BC858A-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BDE0C3F629D3D1&compId=bc856_7_8.pdf?ci_sign=ebf30b15ac768afb08d946c05ed889839873ebae Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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BC858AW-7-F BC858AW-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BEA2BC090893D1&compId=bc856_7_8W.pdf?ci_sign=dfd08c0bab68c91f4bb731ac4b2191eee2776fbb Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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BAW56T-7-F BAW56T-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE985812CCA207358BF&compId=BAW56T.pdf?ci_sign=c94175b46bd0c8bb1fa58c62f412f6ddee2c9b13 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 75mA; 4ns; SOT523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 75mA
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Capacitance: 1.5pF
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Features of semiconductor devices: small signal
auf Bestellung 684 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
506+0.14 EUR
684+0.1 EUR
Mindestbestellmenge: 358
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BAW56W-7-F
+1
 		BAW56W-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B6EB22393BAE8143&compId=BAW56W.pdf?ci_sign=28f87687fe500f34d87c17a8cbf954ee65334d3e Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT323; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT323
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
Features of semiconductor devices: small signal
auf Bestellung 2798 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
782+0.092 EUR
926+0.077 EUR
1421+0.05 EUR
2058+0.035 EUR
2337+0.031 EUR
Mindestbestellmenge: 625
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FMMT593TA FMMT593TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C564FEF7F42749&compId=FMMT593.pdf?ci_sign=2241336db724f4109100085216c2ae605032be55 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 500mW; SOT23
Case: SOT23
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Quantity in set/package: 3000pcs.
Frequency: 50MHz
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
auf Bestellung 1749 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
168+0.43 EUR
246+0.29 EUR
290+0.25 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 122
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FMMT597TA FMMT597TA DIODES INCORPORATED FMMT597.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.2A; 500mW; SOT23
Case: SOT23
Collector current: 0.2A
Power dissipation: 0.5W
Collector-emitter voltage: 300V
Quantity in set/package: 3000pcs.
Frequency: 75MHz
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
auf Bestellung 1008 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
171+0.42 EUR
210+0.34 EUR
246+0.29 EUR
285+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 125
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FMMT620TA FMMT620TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDF0651C037D820&compId=FMMT620.pdf?ci_sign=2c617d69f79f8aa09ce5c6a1d446f0f0df43a9a1 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 625mW; SOT23
Case: SOT23
Collector current: 1.5A
Power dissipation: 0.625W
Current gain: 10...900
Collector-emitter voltage: 80V
Quantity in set/package: 3000pcs.
Frequency: 160MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
auf Bestellung 614 Stücke:
Lieferzeit 14-21 Tag (e)
84+0.86 EUR
188+0.38 EUR
222+0.32 EUR
239+0.3 EUR
500+0.26 EUR
Mindestbestellmenge: 84
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FMMT634TA FMMT634TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDF14AB1922F820&compId=FMMT634.pdf?ci_sign=aa3c94e409f11812273fe9d20d00a2e4dd115584 Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.9A; 625mW; SOT23
Case: SOT23
Collector current: 0.9A
Power dissipation: 0.625W
Current gain: 0.6k...60k
Collector-emitter voltage: 100V
Quantity in set/package: 3000pcs.
Frequency: 140MHz
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
auf Bestellung 2041 Stücke:
Lieferzeit 14-21 Tag (e)
82+0.87 EUR
101+0.71 EUR
117+0.61 EUR
179+0.4 EUR
213+0.34 EUR
500+0.25 EUR
Mindestbestellmenge: 82
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FMMT722TA FMMT722TA DIODES INCORPORATED FMMT722.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 70V; 1.5A; 625mW; SOT23
Case: SOT23
Collector current: 1.5A
Power dissipation: 0.625W
Current gain: 300...470
Collector-emitter voltage: 70V
Quantity in set/package: 3000pcs.
Frequency: 200MHz
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
auf Bestellung 2991 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
226+0.32 EUR
253+0.28 EUR
345+0.21 EUR
500+0.2 EUR
Mindestbestellmenge: 167
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BAS16LP-7 BAS16LP-7 DIODES INCORPORATED BAS16LP.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; DFN2; Ufmax: 1.25V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DFN2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
Mindestbestellmenge: 95
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BAS16Q-7-F BAS16Q-7-F DIODES INCORPORATED BAS16_MMBD4148_MMBD914.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
auf Bestellung 5550 Stücke:
Lieferzeit 14-21 Tag (e)
1600+0.045 EUR
2150+0.033 EUR
2275+0.031 EUR
2750+0.026 EUR
2925+0.025 EUR
Mindestbestellmenge: 1600
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AL5801W6-7 AL5801W6-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AEFB04372C15A143&compId=AL5801.pdf?ci_sign=dc9cf076da6c16d6766433467bdf6b49eb24ffab Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 350mA; Ch: 1; PWM
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Output current: 0.35A
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 5...100V DC
Kind of package: reel; tape
auf Bestellung 772 Stücke:
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125+0.57 EUR
177+0.4 EUR
199+0.36 EUR
206+0.35 EUR
Mindestbestellmenge: 125
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BC846BW-13-F BC846BW-13-F DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 100mA; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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BC846BW-7-F BC846BW-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BE27D49BD013D1&compId=BC846_7_8W.pdf?ci_sign=345ef7b33ea3540ab03aec070af17430e6e66ab7 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
auf Bestellung 1498 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
625+0.11 EUR
953+0.075 EUR
1475+0.048 EUR
1498+0.047 EUR
Mindestbestellmenge: 556
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LM2903QS-13 LM2903QS-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9F45220708D1E28&compId=LM290xxQ.pdf?ci_sign=88e6b8aa5aebe2707e3e1fb40dcbc356183c21f0 Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 200nA
Kind of comparator: universal
Case: SO8
Kind of output: open collector
Type of integrated circuit: comparator
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 200nA
Input offset voltage: 15mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
auf Bestellung 2302 Stücke:
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143+0.5 EUR
235+0.3 EUR
293+0.24 EUR
407+0.18 EUR
496+0.14 EUR
538+0.13 EUR
Mindestbestellmenge: 143
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BAV199WQ-7 BAV199WQ-7 DIODES INCORPORATED BAV199WQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT323; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.16A
Reverse recovery time: 3µs
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
auf Bestellung 2948 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
569+0.13 EUR
837+0.086 EUR
953+0.075 EUR
1306+0.055 EUR
1507+0.047 EUR
1640+0.044 EUR
Mindestbestellmenge: 500
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BAT54AW-7-F BAT54AW-7-F DIODES INCORPORATED BAT54W_AW_CW_SW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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BAS21Q-13-F BAS21Q-13-F DIODES INCORPORATED Ds12004.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.4A
Features of semiconductor devices: small signal
auf Bestellung 498 Stücke:
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DMT6009LCT DIODES INCORPORATED DMT6009LCT.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 14.5mΩ
Power dissipation: 2.2W
Drain current: 29.8A
Gate-source voltage: ±16V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6009LFG-13 DIODES INCORPORATED DMT6009LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 11.7mΩ
Power dissipation: 2.08W
Drain current: 9A
Gate-source voltage: ±16V
Pulsed drain current: 90A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6009LK3-13 DIODES INCORPORATED DMT6009LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12.8mΩ
Power dissipation: 2.6W
Drain current: 10.6A
Gate-source voltage: ±16V
Pulsed drain current: 90A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6009LPS-13 DIODES INCORPORATED DMT6009LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 2.3W
Drain current: 9.1A
Gate-source voltage: ±16V
Pulsed drain current: 160A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6009LSS-13 DMT6009LSS-13 DIODES INCORPORATED DMT6009LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 1.6W
Drain current: 11.5A
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6010LFG-13 DIODES INCORPORATED DMT6010LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 25A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6010LFG-7 DIODES INCORPORATED DMT6010LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6010LPS-13 DIODES INCORPORATED DMT6010LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 12mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 125A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6011LSS-13 DMT6011LSS-13 DIODES INCORPORATED DMT6011LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14.5mΩ
Power dissipation: 2.1W
Drain current: 8.5A
Gate-source voltage: ±20V
Pulsed drain current: 85A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6012LSS-13 DMT6012LSS-13 DIODES INCORPORATED DMT6012LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14mΩ
Power dissipation: 1.84W
Drain current: 8.4A
Gate-source voltage: ±20V
Pulsed drain current: 65A
Drain-source voltage: 60V
Kind of channel: enhancement
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BC847CQ-7-F BC847CQ-7-F DIODES INCORPORATED ds11108.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
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BC847CT-7-F BC847CT-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED7FF61E7108A18&compId=BC847xT.pdf?ci_sign=24a2c29b5ce6a8d662d0d43c624ce7b6b8ea8a2d Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 518 Stücke:
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432+0.17 EUR
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BC847CW-13-F BC847CW-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BE27D49BD013D1&compId=BC846_7_8W.pdf?ci_sign=345ef7b33ea3540ab03aec070af17430e6e66ab7 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
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BC847CW-7-F BC847CW-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BE27D49BD013D1&compId=BC846_7_8W.pdf?ci_sign=345ef7b33ea3540ab03aec070af17430e6e66ab7 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
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610+0.12 EUR
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3000+0.031 EUR
6000+0.027 EUR
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BAT54STQ-7-F BAT54STQ-7-F DIODES INCORPORATED BAT54TQ-STQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT523; SMD; 30V; 0.2A; reel,tape; 150mW
Type of diode: Schottky switching
Case: SOT523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Application: automotive industry
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BAT54SW-13-F BAT54SW-13-F DIODES INCORPORATED BAT54W_AW_CW_SW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
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BAT54SW-7-F
+1
 		BAT54SW-7-F DIODES INCORPORATED BAT54W_AW_CW_SW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
auf Bestellung 4669 Stücke:
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358+0.2 EUR
532+0.13 EUR
673+0.11 EUR
964+0.074 EUR
1397+0.051 EUR
1608+0.044 EUR
3000+0.037 EUR
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BAT54SWQ-7-F BAT54SWQ-7-F DIODES INCORPORATED SWQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Application: automotive industry
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455+0.16 EUR
490+0.14 EUR
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BC847BT-7-F BC847BT-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED7FF61E7108A18&compId=BC847xT.pdf?ci_sign=24a2c29b5ce6a8d662d0d43c624ce7b6b8ea8a2d Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
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455+0.16 EUR
715+0.1 EUR
1038+0.069 EUR
1247+0.057 EUR
2128+0.034 EUR
2891+0.025 EUR
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DMTH6004SK3Q-13 DMTH6004SK3Q-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986CAA0E62B1A38BF&compId=DMTH6004SK3Q.pdf?ci_sign=44945004b091d05cf2809c979a26c92b13976565 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252
Mounting: SMD
Case: TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
On-state resistance: 3.8mΩ
Power dissipation: 3.9W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 100A
Kind of package: 13 inch reel; tape
Application: automotive industry
Polarisation: unipolar
auf Bestellung 1055 Stücke:
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50+1.46 EUR
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69+1.04 EUR
100+1 EUR
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PAM8620TR DIODES INCORPORATED PAM8620.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 15W; Ch: 2; Amp.class: D; QFN32; 8÷26VDC
Operating temperature: -40...125°C
Output power: 15W
Voltage supply range: 8...26V DC
Kind of package: reel; tape
Amplifier class: D
Integrated circuit features: low distortion THD; low noise; stereo
Case: QFN32
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 2
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BAV99Q-13-F BAV99Q-13-F DIODES INCORPORATED BAV99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAV99T-7-F BAV99T-7-F DIODES INCORPORATED BAS16T_BAW56T_BAV70T_BAV99T.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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417+0.17 EUR
511+0.14 EUR
550+0.13 EUR
758+0.094 EUR
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DMP3098LSD-13 DMP3098LSD-13 DIODES INCORPORATED ds31448.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.3A; Idm: -15A; 1.8W; SO8
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Type of transistor: P-MOSFET x2
Drain-source voltage: -30V
Pulsed drain current: -15A
Drain current: -3.3A
On-state resistance: 65mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of package: 13 inch reel; tape
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MBRD20100CT-13 DIODES INCORPORATED MBRD20100CT.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 100V; 10Ax2; reel
Type of diode: Schottky rectifying
Case: TO252/DPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. forward impulse current: 150A
Kind of package: reel
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SMBJ12CA-13-F SMBJ12CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1363 Stücke:
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239+0.3 EUR
272+0.26 EUR
443+0.16 EUR
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HD01-T HD01-T DIODES INCORPORATED HD01.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 0.8A; Ifsm: 30A; MiniDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 0.8A
Max. forward impulse current: 30A
Electrical mounting: SMT
Case: MiniDIP
Kind of package: reel; tape
auf Bestellung 2174 Stücke:
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153+0.47 EUR
177+0.41 EUR
321+0.22 EUR
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BAT54AWQ-7-F BAT54AWQ-7-F DIODES INCORPORATED SWQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
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ZTL431AQFTA ZTL431AQFTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84F31562F17F20C7&compId=ZTL431%2C432.pdf?ci_sign=00774d159c42e48604be9d430ea0ab015390bded Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
auf Bestellung 3045 Stücke:
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228+0.31 EUR
341+0.21 EUR
385+0.19 EUR
447+0.16 EUR
481+0.15 EUR
506+0.14 EUR
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LMV358M8G-13 LMV358M8G-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE791EF3ADA67AEC746&compId=LMV321_358.pdf?ci_sign=8bc5fa44121e5e1b26868b38723c8ee77bb42ffc Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.7÷5.5V; Ch: 2; MSOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Open-loop gain: 10dB
Operating voltage: 2.7...5.5V
Mounting: SMT
Number of channels: 2
Case: MSOP8
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Integrated circuit features: rail-to-rail output
Kind of package: reel; tape
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173+0.41 EUR
209+0.34 EUR
236+0.3 EUR
275+0.26 EUR
334+0.21 EUR
365+0.2 EUR
500+0.19 EUR
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FZT600TA FZT600TA DIODES INCORPORATED FZT600A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Quantity in set/package: 1000pcs.
auf Bestellung 640 Stücke:
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64+1.13 EUR
96+0.75 EUR
151+0.47 EUR
250+0.4 EUR
500+0.36 EUR
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DMG6402LVT-7 DMG6402LVT-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C7F77FBE5CD8BF&compId=DMG6402LVT.pdf?ci_sign=84d9abf52e5fbfce0da2efa148b9958860131e35 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: TSOT26
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 42mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
auf Bestellung 2306 Stücke:
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167+0.43 EUR
199+0.36 EUR
233+0.31 EUR
313+0.23 EUR
511+0.14 EUR
782+0.092 EUR
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ZTL432AFTA ZTL432AFTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84F31562F17F20C7&compId=ZTL431%2C432.pdf?ci_sign=00774d159c42e48604be9d430ea0ab015390bded Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 1542 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
343+0.21 EUR
385+0.19 EUR
455+0.16 EUR
Mindestbestellmenge: 228
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SMAJ58CA-13-F SMAJ58CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1074 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
311+0.23 EUR
368+0.19 EUR
477+0.15 EUR
610+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 218
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DMT3020LFDB-13 DIODES INCORPORATED DMT3020LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Type of transistor: N-MOSFET
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMG3406L-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C79BBF7A2078BF&compId=DMG3406L.pdf?ci_sign=32d58b8a920b330699f73edcb454730fa26ea4a0
DMG3406L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Power dissipation: 1.4W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
auf Bestellung 2876 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
295+0.24 EUR
460+0.16 EUR
552+0.13 EUR
783+0.091 EUR
1000+0.081 EUR
1500+0.077 EUR
Mindestbestellmenge: 193
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SMAJ26A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ26A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 2262 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
281+0.25 EUR
334+0.21 EUR
715+0.1 EUR
953+0.075 EUR
Mindestbestellmenge: 228
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ZXTR2005Z-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE985B42B8157A898BF&compId=ZXTR2005Z.pdf?ci_sign=c4cb0e2d00d2d39614a4bd28867f8e37417ee48c
ZXTR2005Z-13
Hersteller: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.038A; SOT89; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 38mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±10%
Number of channels: 1
Input voltage: 10...100V
auf Bestellung 2318 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
207+0.35 EUR
234+0.31 EUR
274+0.26 EUR
304+0.24 EUR
329+0.22 EUR
360+0.2 EUR
500+0.19 EUR
Mindestbestellmenge: 167
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BSS84Q-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED893F6CEBA2A18&compId=BSS84.pdf?ci_sign=668ed4aeac2cfcc1da331a3aa0cfdaaf2eeb09f2
BSS84Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -130mA
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BSS84Q-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED893F6CEBA2A18&compId=BSS84.pdf?ci_sign=668ed4aeac2cfcc1da331a3aa0cfdaaf2eeb09f2
BSS84Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -130mA
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 442 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
442+0.16 EUR
Mindestbestellmenge: 417
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BSS84W-7-F pVersion=0046&contRep=ZT&docId=005056AB82531EE986DEC7E1F851B8BF&compId=BSS84W.pdf?ci_sign=63714c7339417f7132fb61c9aeb1be0b0505177d
BSS84W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.2W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -130mA
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 1864 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
532+0.13 EUR
665+0.11 EUR
735+0.097 EUR
932+0.077 EUR
1040+0.069 EUR
Mindestbestellmenge: 385
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BZT52C9V1-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6
BZT52C9V1-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 1113 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
926+0.077 EUR
1113+0.064 EUR
Mindestbestellmenge: 715
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BC858A-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BDE0C3F629D3D1&compId=bc856_7_8.pdf?ci_sign=ebf30b15ac768afb08d946c05ed889839873ebae
BC858A-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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BC858AW-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BEA2BC090893D1&compId=bc856_7_8W.pdf?ci_sign=dfd08c0bab68c91f4bb731ac4b2191eee2776fbb
BC858AW-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAW56T-7-F pVersion=0046&contRep=ZT&docId=005056AB82531EE985812CCA207358BF&compId=BAW56T.pdf?ci_sign=c94175b46bd0c8bb1fa58c62f412f6ddee2c9b13
BAW56T-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 75mA; 4ns; SOT523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 75mA
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Capacitance: 1.5pF
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Features of semiconductor devices: small signal
auf Bestellung 684 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
506+0.14 EUR
684+0.1 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
BAW56W-7-F pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B6EB22393BAE8143&compId=BAW56W.pdf?ci_sign=28f87687fe500f34d87c17a8cbf954ee65334d3e
BAW56W-7-F
+1
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT323; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT323
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
Features of semiconductor devices: small signal
auf Bestellung 2798 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
782+0.092 EUR
926+0.077 EUR
1421+0.05 EUR
2058+0.035 EUR
2337+0.031 EUR
Mindestbestellmenge: 625
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FMMT593TA pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C564FEF7F42749&compId=FMMT593.pdf?ci_sign=2241336db724f4109100085216c2ae605032be55
FMMT593TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 500mW; SOT23
Case: SOT23
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Quantity in set/package: 3000pcs.
Frequency: 50MHz
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
auf Bestellung 1749 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
168+0.43 EUR
246+0.29 EUR
290+0.25 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 122
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FMMT597TA FMMT597.pdf
FMMT597TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.2A; 500mW; SOT23
Case: SOT23
Collector current: 0.2A
Power dissipation: 0.5W
Collector-emitter voltage: 300V
Quantity in set/package: 3000pcs.
Frequency: 75MHz
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
auf Bestellung 1008 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
171+0.42 EUR
210+0.34 EUR
246+0.29 EUR
285+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
FMMT620TA pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDF0651C037D820&compId=FMMT620.pdf?ci_sign=2c617d69f79f8aa09ce5c6a1d446f0f0df43a9a1
FMMT620TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 625mW; SOT23
Case: SOT23
Collector current: 1.5A
Power dissipation: 0.625W
Current gain: 10...900
Collector-emitter voltage: 80V
Quantity in set/package: 3000pcs.
Frequency: 160MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
auf Bestellung 614 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
188+0.38 EUR
222+0.32 EUR
239+0.3 EUR
500+0.26 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
FMMT634TA pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDF14AB1922F820&compId=FMMT634.pdf?ci_sign=aa3c94e409f11812273fe9d20d00a2e4dd115584
FMMT634TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.9A; 625mW; SOT23
Case: SOT23
Collector current: 0.9A
Power dissipation: 0.625W
Current gain: 0.6k...60k
Collector-emitter voltage: 100V
Quantity in set/package: 3000pcs.
Frequency: 140MHz
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
auf Bestellung 2041 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
101+0.71 EUR
117+0.61 EUR
179+0.4 EUR
213+0.34 EUR
500+0.25 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
FMMT722TA FMMT722.pdf
FMMT722TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 70V; 1.5A; 625mW; SOT23
Case: SOT23
Collector current: 1.5A
Power dissipation: 0.625W
Current gain: 300...470
Collector-emitter voltage: 70V
Quantity in set/package: 3000pcs.
Frequency: 200MHz
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
auf Bestellung 2991 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
226+0.32 EUR
253+0.28 EUR
345+0.21 EUR
500+0.2 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
BAS16LP-7 BAS16LP.pdf
BAS16LP-7
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; DFN2; Ufmax: 1.25V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DFN2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
Mindestbestellmenge: 95
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BAS16Q-7-F BAS16_MMBD4148_MMBD914.pdf
BAS16Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
auf Bestellung 5550 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1600+0.045 EUR
2150+0.033 EUR
2275+0.031 EUR
2750+0.026 EUR
2925+0.025 EUR
Mindestbestellmenge: 1600
Im Einkaufswagen  Stück im Wert von  UAH
AL5801W6-7 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AEFB04372C15A143&compId=AL5801.pdf?ci_sign=dc9cf076da6c16d6766433467bdf6b49eb24ffab
AL5801W6-7
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 350mA; Ch: 1; PWM
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Output current: 0.35A
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 5...100V DC
Kind of package: reel; tape
auf Bestellung 772 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
177+0.4 EUR
199+0.36 EUR
206+0.35 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
BC846BW-13-F
BC846BW-13-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 100mA; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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BC846BW-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BE27D49BD013D1&compId=BC846_7_8W.pdf?ci_sign=345ef7b33ea3540ab03aec070af17430e6e66ab7
BC846BW-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
auf Bestellung 1498 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
625+0.11 EUR
953+0.075 EUR
1475+0.048 EUR
1498+0.047 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
LM2903QS-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9F45220708D1E28&compId=LM290xxQ.pdf?ci_sign=88e6b8aa5aebe2707e3e1fb40dcbc356183c21f0
LM2903QS-13
Hersteller: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 200nA
Kind of comparator: universal
Case: SO8
Kind of output: open collector
Type of integrated circuit: comparator
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 200nA
Input offset voltage: 15mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
auf Bestellung 2302 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
235+0.3 EUR
293+0.24 EUR
407+0.18 EUR
496+0.14 EUR
538+0.13 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
BAV199WQ-7 BAV199WQ.pdf
BAV199WQ-7
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT323; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.16A
Reverse recovery time: 3µs
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
auf Bestellung 2948 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
569+0.13 EUR
837+0.086 EUR
953+0.075 EUR
1306+0.055 EUR
1507+0.047 EUR
1640+0.044 EUR
Mindestbestellmenge: 500
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BAT54AW-7-F BAT54W_AW_CW_SW.pdf
BAT54AW-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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BAS21Q-13-F Ds12004.pdf
BAS21Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.4A
Features of semiconductor devices: small signal
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
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DMT6009LCT DMT6009LCT.pdf
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 14.5mΩ
Power dissipation: 2.2W
Drain current: 29.8A
Gate-source voltage: ±16V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6009LFG-13 DMT6009LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 11.7mΩ
Power dissipation: 2.08W
Drain current: 9A
Gate-source voltage: ±16V
Pulsed drain current: 90A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6009LK3-13 DMT6009LK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12.8mΩ
Power dissipation: 2.6W
Drain current: 10.6A
Gate-source voltage: ±16V
Pulsed drain current: 90A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6009LPS-13 DMT6009LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 2.3W
Drain current: 9.1A
Gate-source voltage: ±16V
Pulsed drain current: 160A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6009LSS-13 DMT6009LSS.pdf
DMT6009LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 1.6W
Drain current: 11.5A
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6010LFG-13 DMT6010LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 25A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6010LFG-7 DMT6010LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6010LPS-13 DMT6010LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 12mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 125A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6011LSS-13 DMT6011LSS.pdf
DMT6011LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14.5mΩ
Power dissipation: 2.1W
Drain current: 8.5A
Gate-source voltage: ±20V
Pulsed drain current: 85A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6012LSS-13 DMT6012LSS.pdf
DMT6012LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14mΩ
Power dissipation: 1.84W
Drain current: 8.4A
Gate-source voltage: ±20V
Pulsed drain current: 65A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BC847CQ-7-F ds11108.pdf
BC847CQ-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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BC847CT-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED7FF61E7108A18&compId=BC847xT.pdf?ci_sign=24a2c29b5ce6a8d662d0d43c624ce7b6b8ea8a2d
BC847CT-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 518 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
432+0.17 EUR
496+0.14 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
BC847CW-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BE27D49BD013D1&compId=BC846_7_8W.pdf?ci_sign=345ef7b33ea3540ab03aec070af17430e6e66ab7
BC847CW-13-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC847CW-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BE27D49BD013D1&compId=BC846_7_8W.pdf?ci_sign=345ef7b33ea3540ab03aec070af17430e6e66ab7
BC847CW-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
auf Bestellung 6058 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
610+0.12 EUR
642+0.11 EUR
1011+0.071 EUR
1553+0.046 EUR
1839+0.039 EUR
3000+0.031 EUR
6000+0.027 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
BAT54STQ-7-F BAT54TQ-STQ.pdf
BAT54STQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT523; SMD; 30V; 0.2A; reel,tape; 150mW
Type of diode: Schottky switching
Case: SOT523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Application: automotive industry
Produkt ist nicht verfügbar
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BAT54SW-13-F BAT54W_AW_CW_SW.pdf
BAT54SW-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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BAT54SW-7-F BAT54W_AW_CW_SW.pdf
BAT54SW-7-F
+1
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
auf Bestellung 4669 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
532+0.13 EUR
673+0.11 EUR
964+0.074 EUR
1397+0.051 EUR
1608+0.044 EUR
3000+0.037 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
BAT54SWQ-7-F SWQ.pdf
BAT54SWQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
490+0.14 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
BC847BT-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED7FF61E7108A18&compId=BC847xT.pdf?ci_sign=24a2c29b5ce6a8d662d0d43c624ce7b6b8ea8a2d
BC847BT-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 10711 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
715+0.1 EUR
1038+0.069 EUR
1247+0.057 EUR
2128+0.034 EUR
2891+0.025 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6004SK3Q-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE986CAA0E62B1A38BF&compId=DMTH6004SK3Q.pdf?ci_sign=44945004b091d05cf2809c979a26c92b13976565
DMTH6004SK3Q-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252
Mounting: SMD
Case: TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
On-state resistance: 3.8mΩ
Power dissipation: 3.9W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 100A
Kind of package: 13 inch reel; tape
Application: automotive industry
Polarisation: unipolar
auf Bestellung 1055 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.46 EUR
55+1.3 EUR
60+1.2 EUR
69+1.04 EUR
100+1 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
PAM8620TR PAM8620.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 15W; Ch: 2; Amp.class: D; QFN32; 8÷26VDC
Operating temperature: -40...125°C
Output power: 15W
Voltage supply range: 8...26V DC
Kind of package: reel; tape
Amplifier class: D
Integrated circuit features: low distortion THD; low noise; stereo
Case: QFN32
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 2
Produkt ist nicht verfügbar
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BAV99Q-13-F BAV99.pdf
BAV99Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
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BAV99T-7-F BAS16T_BAW56T_BAV70T_BAV99T.pdf
BAV99T-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 2550 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
511+0.14 EUR
550+0.13 EUR
758+0.094 EUR
1013+0.071 EUR
1180+0.061 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
DMP3098LSD-13 ds31448.pdf
DMP3098LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.3A; Idm: -15A; 1.8W; SO8
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Type of transistor: P-MOSFET x2
Drain-source voltage: -30V
Pulsed drain current: -15A
Drain current: -3.3A
On-state resistance: 65mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
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MBRD20100CT-13 MBRD20100CT.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 100V; 10Ax2; reel
Type of diode: Schottky rectifying
Case: TO252/DPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. forward impulse current: 150A
Kind of package: reel
Produkt ist nicht verfügbar
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SMBJ12CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ12CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1363 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
239+0.3 EUR
272+0.26 EUR
443+0.16 EUR
610+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 193
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HD01-T HD01.pdf
HD01-T
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 0.8A; Ifsm: 30A; MiniDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 0.8A
Max. forward impulse current: 30A
Electrical mounting: SMT
Case: MiniDIP
Kind of package: reel; tape
auf Bestellung 2174 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
153+0.47 EUR
177+0.41 EUR
321+0.22 EUR
500+0.15 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
BAT54AWQ-7-F SWQ.pdf
BAT54AWQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
Produkt ist nicht verfügbar
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ZTL431AQFTA pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84F31562F17F20C7&compId=ZTL431%2C432.pdf?ci_sign=00774d159c42e48604be9d430ea0ab015390bded
ZTL431AQFTA
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
auf Bestellung 3045 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
341+0.21 EUR
385+0.19 EUR
447+0.16 EUR
481+0.15 EUR
506+0.14 EUR
Mindestbestellmenge: 228
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LMV358M8G-13 pVersion=0046&contRep=ZT&docId=005056AB752F1EE791EF3ADA67AEC746&compId=LMV321_358.pdf?ci_sign=8bc5fa44121e5e1b26868b38723c8ee77bb42ffc
LMV358M8G-13
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.7÷5.5V; Ch: 2; MSOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Open-loop gain: 10dB
Operating voltage: 2.7...5.5V
Mounting: SMT
Number of channels: 2
Case: MSOP8
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Integrated circuit features: rail-to-rail output
Kind of package: reel; tape
auf Bestellung 2480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
209+0.34 EUR
236+0.3 EUR
275+0.26 EUR
334+0.21 EUR
365+0.2 EUR
500+0.19 EUR
Mindestbestellmenge: 173
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FZT600TA FZT600A.pdf
FZT600TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Quantity in set/package: 1000pcs.
auf Bestellung 640 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
96+0.75 EUR
151+0.47 EUR
250+0.4 EUR
500+0.36 EUR
Mindestbestellmenge: 64
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DMG6402LVT-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C7F77FBE5CD8BF&compId=DMG6402LVT.pdf?ci_sign=84d9abf52e5fbfce0da2efa148b9958860131e35
DMG6402LVT-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: TSOT26
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 42mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
auf Bestellung 2306 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
199+0.36 EUR
233+0.31 EUR
313+0.23 EUR
511+0.14 EUR
782+0.092 EUR
Mindestbestellmenge: 167
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ZTL432AFTA pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84F31562F17F20C7&compId=ZTL431%2C432.pdf?ci_sign=00774d159c42e48604be9d430ea0ab015390bded
ZTL432AFTA
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 1542 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
343+0.21 EUR
385+0.19 EUR
455+0.16 EUR
Mindestbestellmenge: 228
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SMAJ58CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ58CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1074 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
311+0.23 EUR
368+0.19 EUR
477+0.15 EUR
610+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 218
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DMT3020LFDB-13 DMT3020LFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Type of transistor: N-MOSFET
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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