DMN2992UFB4-7B Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Input Capacitance (Ciss) (Max) @ Vds: 15.6 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: X2-DFN1006-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 380mW (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.053 EUR |
| 20000+ | 0.048 EUR |
| 30000+ | 0.045 EUR |
| 50000+ | 0.042 EUR |
| 70000+ | 0.041 EUR |
| 100000+ | 0.039 EUR |
| 250000+ | 0.035 EUR |
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Technische Details DMN2992UFB4-7B Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-, Input Capacitance (Ciss) (Max) @ Vds: 15.6 pF @ 16 V, Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: X2-DFN1006-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 380mW (Ta), Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 830mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN2992UFB4-7B nach Preis ab 0.051 EUR bis 0.35 EUR
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DMN2992UFB4-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V X2-DFN1006- Package / Case: 3-XFDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 15.6 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: X2-DFN1006-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 380mW (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 830mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 8382964 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2992UFB4-7B | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 10K |
auf Bestellung 15375 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2992UFB4-7B |
|
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 15.6 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: X2-DFN1006-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 380mW (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 15.6 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: X2-DFN1006-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 380mW (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 8382964 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 53+ | 0.33 EUR |
| 88+ | 0.2 EUR |
| 143+ | 0.12 EUR |
| 500+ | 0.091 EUR |
| 1000+ | 0.08 EUR |
| 2000+ | 0.071 EUR |
| 5000+ | 0.061 EUR |
| DMN2992UFB4-7B |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 10K
MOSFETs MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 10K
auf Bestellung 15375 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 0.35 EUR |
| 14+ | 0.21 EUR |
| 100+ | 0.13 EUR |
| 500+ | 0.097 EUR |
| 1000+ | 0.076 EUR |
| 5000+ | 0.065 EUR |
| 10000+ | 0.051 EUR |