
2N7002EQ-7-F Diodes Zetex
auf Bestellung 135000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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6000+ | 0.05 EUR |
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Technische Details 2N7002EQ-7-F Diodes Zetex
Description: 2N7002 FAMILY SOT23 T&R 3K, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 292mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote 2N7002EQ-7-F nach Preis ab 0.05 EUR bis 0.59 EUR
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2N7002EQ-7-F | Hersteller : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 292mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 126000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002EQ-7-F | Hersteller : Diodes Incorporated |
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auf Bestellung 2899 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002EQ-7-F | Hersteller : Diodes Inc |
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Produkt ist nicht verfügbar |
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2N7002EQ-7-F | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 292mA; Idm: 1A; 700mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 292mA Power dissipation: 0.7W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.5nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Pulsed drain current: 1A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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2N7002EQ-7-F | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 292mA; Idm: 1A; 700mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 292mA Power dissipation: 0.7W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.5nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Pulsed drain current: 1A |
Produkt ist nicht verfügbar |