ZXMC4559DN8TA Diodes Zetex
| Anzahl | Privatkunde |
|---|---|
| 500+ | 0.71 EUR |
| 1000+ | 0.64 EUR |
| 2500+ | 0.48 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
500 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details ZXMC4559DN8TA Diodes Zetex
Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A, Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V, 1021pF @ 30V, Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote ZXMC4559DN8TA nach Preis ab 0.61 EUR bis 3.77 EUR
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ZXMC4559DN8TA | Diodes Zetex |
 Trans MOSFET N/P-CH 60V 3.6A/2.6A 8-Pin SOIC T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMC4559DN8TA | Diodes Zetex |
Trans MOSFET N/P-CH 60V 3.6A/2.6A 8-Pin SOIC T/R |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMC4559DN8TA | Diodes Zetex |
Trans MOSFET N/P-CH 60V 3.6A/2.6A 8-Pin SOIC T/R |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMC4559DN8TA | Diodes Incorporated |
Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V, 1021pF @ 30V Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 255 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMC4559DN8TA | Diodes Incorporated |
MOSFETs Comp. 60V NP-Chnl |
auf Bestellung 3044 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMC4559DN8TA | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Mounting: SMD Power dissipation: 1.25W Polarisation: unipolar Drain current: 3.6/-2.6A Kind of channel: enhancement Drain-source voltage: 60/-60V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SO8 On-state resistance: 75mΩ |
auf Bestellung 134 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| ZXMC4559DN8TA |
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Hersteller: Diodes Zetex
Trans MOSFET N/P-CH 60V 3.6A/2.6A 8-Pin SOIC T/R
Trans MOSFET N/P-CH 60V 3.6A/2.6A 8-Pin SOIC T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 0.74 EUR |
| 1000+ | 0.67 EUR |
| 2000+ | 0.61 EUR |
| ZXMC4559DN8TA |
|
Hersteller: Diodes Zetex
Trans MOSFET N/P-CH 60V 3.6A/2.6A 8-Pin SOIC T/R
Trans MOSFET N/P-CH 60V 3.6A/2.6A 8-Pin SOIC T/R
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 104+ | 1.73 EUR |
| 105+ | 1.68 EUR |
| 128+ | 1.34 EUR |
| 250+ | 0.89 EUR |
| ZXMC4559DN8TA |
|
Hersteller: Diodes Zetex
Trans MOSFET N/P-CH 60V 3.6A/2.6A 8-Pin SOIC T/R
Trans MOSFET N/P-CH 60V 3.6A/2.6A 8-Pin SOIC T/R
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 95+ | 1.89 EUR |
| 104+ | 1.67 EUR |
| 105+ | 1.58 EUR |
| 128+ | 1.25 EUR |
| 250+ | 0.81 EUR |
| ZXMC4559DN8TA |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V, 1021pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V, 1021pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 255 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.75 EUR |
| 10+ | 2.38 EUR |
| 25+ | 2.01 EUR |
| 50+ | 1.78 EUR |
| 100+ | 1.59 EUR |
| ZXMC4559DN8TA |
|
Hersteller: Diodes Incorporated
MOSFETs Comp. 60V NP-Chnl
MOSFETs Comp. 60V NP-Chnl
auf Bestellung 3044 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.77 EUR |
| 10+ | 1.8 EUR |
| 100+ | 1.61 EUR |
| ZXMC4559DN8TA |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Mounting: SMD
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: 3.6/-2.6A
Kind of channel: enhancement
Drain-source voltage: 60/-60V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
On-state resistance: 75mΩ
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Mounting: SMD
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: 3.6/-2.6A
Kind of channel: enhancement
Drain-source voltage: 60/-60V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
On-state resistance: 75mΩ
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)